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Purnachandra Rao et al., 2023 - Google Patents

Comparative study of III-Nitride Nano-HEMTs on different substrates for emerging high-power nanoelectronics and millimetre wave applications

Purnachandra Rao et al., 2023

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Document ID
15520044767464281311
Author
Purnachandra Rao G
Lenka T
Singh R
Boukortt N
Sadaf S
Nguyen H
Publication year
Publication venue
Journal of Electronic Materials

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Snippet

We have investigated the performance characteristics of a III-nitride high electron mobility transistor (HEMT) on different substrates. It exhibits a negative threshold voltage (depletion mode) for a HEMT grown on silicon (Si), silicon carbide (SiC), and sapphire substrates …
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