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Hou et al., 2020 - Google Patents

High linearity and high power performance with barrier layer of sandwich structure and Al0. 05GaN back barrier for X-band application

Hou et al., 2020

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Document ID
7135449080552235910
Author
Hou B
Yang L
Mi M
Zhang M
Yi C
Wu M
Zhu Q
Lu Y
Zhu J
Zhou X
Lv L
Ma X
Hao Y
Publication year
Publication venue
Journal of Physics D: Applied Physics

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The high power and linearity performance of GaN-based HEMT for X-band application was achieved using the barrier layer of sandwich structure and Al 0.05 GaN back barrier. The AlGaN-sandwich-barrier can modulate polarization-graded field for more flat …
Continue reading at iopscience.iop.org (PDF) (other versions)

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