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Xing et al., 2017 - Google Patents

Planar-nanostrip-channel InAlN/GaN HEMTs on Si With Improved ${g} _ {{m}} $ and ${f} _ {\textsf {T}} $ linearity

Xing et al., 2017

Document ID
3675016150505455632
Author
Xing W
Liu Z
Qiu H
Ng G
Palacios T
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance gm and cutoff frequency f T linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in …
Continue reading at ieeexplore.ieee.org (other versions)

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