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Singh et al., 2024 - Google Patents

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh et al., 2024

Document ID
1188022516599606911
Author
Singh R
Rao G
Lenka T
Prasad S
Boukortt N
Crupi G
Nguyen H
Publication year
Publication venue
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

External Links

Snippet

In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate dimensions given by the—head‐length (L HL) and the foot‐length (L FL). A two‐dimensional …
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