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Hu et al., 2020 - Google Patents

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

Hu et al., 2020

Document ID
5905150805302874151
Author
Hu Q
Zeng F
Cheng W
Zhou G
Wang Q
Yu H
Publication year
Publication venue
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

External Links

Snippet

The dynamic ON-resistance (Ron) of p-GaN HEMTs was reduced using the dual field plate (FP) structure combined with the source field plate (S-FP) and gate field plate (G-FP). The electric field redistribution at the gate edge reduces the electron trapping during the high …
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