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Gribisch et al., 2023 - Google Patents

Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs

Gribisch et al., 2023

Document ID
12356477251562131088
Author
Gribisch P
Carrascon R
Darakchieva V
Lind E
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally-OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis …
Continue reading at ieeexplore.ieee.org (other versions)

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