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Zhang et al., 2012 - Google Patents

A gate-last In 0.53 Ga 0.47 As channel FinFET with Molybdenum source/drain contacts

Zhang et al., 2012

Document ID
987363283965286931
Author
Zhang X
Guo H
Gong X
Yeo Y
Publication year
Publication venue
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

External Links

Snippet

We demonstrated In 0.53 Ga 0.47 As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In 0.53 Ga 0.47 As source and drain, series resistance of~ 250 Ω· μm was achieved, which is …
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