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Xin et al., 2009 - Google Patents

Demonstration of low-leakage-current low-on-resistance 600-V 5.5-A GaN/AlGaN HEMT

Xin et al., 2009

Document ID
10849387249300022898
Author
Xin X
Shi J
Liu L
Edwards J
Swaminathan K
Pabisz M
Murphy M
Eastman L
Pophristic M
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

This letter demonstrates a high-voltage, high-current, and low-leakage-current GaN/AlGaN power HEMT with HfO_2 as the gate dielectric and passivation layer. The device is measured up to 600 V, and the maximum on-state drain current is higher than 5.5 A …
Continue reading at ieeexplore.ieee.org (other versions)

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