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Uno et al., 2008 - Google Patents

Fabrication of high-mobility organic single-crystal field-effect transistors with amorphous fluoropolymer gate insulators

Uno et al., 2008

Document ID
10144356336756595607
Author
Uno M
Tominari Y
Takeya J
Publication year
Publication venue
Organic Electronics

External Links

Snippet

High-mobility rubrene single-crystal field-effect transistors are built on highly water-and oil- repellent fluoropolymer gate insulators. Roughness is introduced at the surface once to provide good adhesion to metal films and photoresist polymers for stable electrodes. Before …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541—Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
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