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Tan et al., 2008 - Google Patents

Low-temperature-processed inorganic gate dielectrics for plastic-substrate-based organic field-effect transistors

Tan et al., 2008

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Document ID
1501738278504308369
Author
Tan H
Cahyadi T
Wang Z
Lohani A
Tsakadze Z
Zhang S
Zhu F
Mhaisalkar S
Publication year
Publication venue
IEEE electron device letters

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Snippet

Low-temperature-processed inorganic gate dielectrics were employed here to yield high- performance organic field-effect transistors (FETs) on flexible plastic substrates. SiN x dielectrics deposited at room temperature and SiN x/sol-gel silica dielectric bilayer …
Continue reading at www.academia.edu (PDF) (other versions)

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