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Tang et al., 2008 - Google Patents

Enhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surface

Tang et al., 2008

Document ID
5665621520905651883
Author
Tang J
Lee C
Chan M
Lee S
Publication year
Publication venue
Applied surface science

External Links

Snippet

A reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma- polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L51/0529—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric having a multilayered structure
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541—Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
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