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Kim et al., 2020 - Google Patents

Improving electrical stability of a-InGaZnO thin-film transistors with thermally deposited self-assembled monolayers

Kim et al., 2020

Document ID
12890572385058755158
Author
Kim M
Cho S
Shin Y
Seok Y
Kim H
Yoon J
Choi R
Lee J
Publication year
Publication venue
Electronic Materials Letters

External Links

Snippet

Abstract Amorphous InGaZnO (a-IGZO) TFTs become mainstream at the forefront of display backplanes and are actively expanding their area for next-generation optoelectronic devices such as flexible and transparent displays. For flexible displays, low temperature processed …
Continue reading at link.springer.com (other versions)

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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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