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Min et al., 2004 - Google Patents

Low-frequency noise in submicrometer MOSFETs with HfO/sub 2/, HfO/sub 2//Al/sub 2/O/sub 3/and HfAlO/sub x/gate stacks

Min et al., 2004

Document ID
8088361616467448122
Author
Min B
Devireddy S
Çelik-Butler Z
Wang F
Zlotnicka A
Tseng H
Tobin P
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

Low-frequency noise measurements were performed on p-and n-channel MOSFETs with HfO/sub 2/, HfAlO/sub x/and HfO/sub 2//Al/sub 2/O/sub 3/as the gate dielectric materials. The gate length varied from 0.135 to 0.36/spl mu/m with 10.02/spl mu/m gate width. The …
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