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Min et al., 2004 - Google Patents

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

Min et al., 2004

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Document ID
4166789723776402921
Author
Min B
Devireddy S
Celik-Butler Z
Wang F
Zlotnicka A
Tseng H
Tobin P
Publication year
Publication venue
IEEE Trans. Electron Devices

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Snippet

Low-frequency noise measurements were per-formed on p-and n-channel MOSFETs with HfO2, HfAlO and HfO2 Al2O3 as the gate dielectric materials. The gate length varied from 0.135 to 0.36 m with 10.02 m gate width. The equivalent oxide thicknesses were: HfO2 23 A …
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