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Chew et al., 2004 - Google Patents

Impact of technology scaling on the 1/f noise of thin and thick gate oxide deep submicron NMOS transistors

Chew et al., 2004

Document ID
3068114825301924723
Author
Chew K
Yeo K
Chu S
Publication year
Publication venue
IEE Proceedings-Circuits, Devices and Systems

External Links

Snippet

This study discusses the composite effect of channel length and gate oxide thickness scaling, coupled with the effect of gate dielectric nitridation on the 1/f noise of minimum channel length NMOS transistors. These transistors have been taken from four advance …
Continue reading at digital-library.theiet.org (other versions)

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