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Blaeser et al., 2016 - Google Patents

Line tunneling dominating charge transport in SiGe/Si heterostructure TFETs

Blaeser et al., 2016

Document ID
5578402683356436518
Author
Blaeser S
Glass S
Schulte-Braucks C
Narimani K
von den Driesch N
Wirths S
Tiedemann A
Trellenkamp S
Buca D
Mantl S
Zhao Q
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

This paper provides an experimental proof that both the ON-current and the subthreshold swing SS of Si (Ge)-based tunneling FETs (TFETs) drastically benefit from device architectures promoting line tunneling aligned with the gate electrical field. A novel SiGe/Si …
Continue reading at ieeexplore.ieee.org (other versions)

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