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WO2022048022A1 - 一种光感应器件及其制作方法、显示面板 - Google Patents

一种光感应器件及其制作方法、显示面板 Download PDF

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Publication number
WO2022048022A1
WO2022048022A1 PCT/CN2020/129324 CN2020129324W WO2022048022A1 WO 2022048022 A1 WO2022048022 A1 WO 2022048022A1 CN 2020129324 W CN2020129324 W CN 2020129324W WO 2022048022 A1 WO2022048022 A1 WO 2022048022A1
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Prior art keywords
layer
active layer
film transistor
thin film
zinc oxide
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PCT/CN2020/129324
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English (en)
French (fr)
Inventor
王海军
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Priority to US16/972,627 priority Critical patent/US11925039B2/en
Publication of WO2022048022A1 publication Critical patent/WO2022048022A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technology, and in particular, to a light sensing device, a manufacturing method thereof, and a display panel.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the present invention provides a light-sensing device, a manufacturing method thereof, and a display panel, aiming at improving the photoelectric conversion efficiency of the light-sensing device, and at the same time realizing the adjustable band gap of the light-sensing device.
  • the present invention provides a light sensing device, comprising:
  • the photoelectric thin film transistor located on the substrate, the photoelectric thin film transistor comprising a first active layer;
  • a switching thin film transistor located on the substrate and connected to the photoelectric thin film transistor, the switching thin film transistor comprising a second active layer;
  • the first active layer includes a first indium gallium zinc oxide layer and a perovskite layer on the first indium gallium zinc oxide layer
  • the second active layer includes a second indium gallium zinc oxide layer material layer.
  • the first active layer further includes a first graphene layer on the perovskite layer.
  • the second active layer further includes a second graphene layer on the second indium gallium zinc oxide layer.
  • the photoelectric thin film transistor comprises: a first bottom gate on the substrate, an insulating layer covering the first bottom gate, the first active layer on the insulating layer, A first source electrode and a first drain electrode located on the insulating layer and connected to both ends of the first active layer, a flat layer covering the first active layer, the first source electrode, and the first drain electrode .
  • the switching thin film transistor comprises: a second bottom gate on the substrate, the insulating layer covering the second bottom gate, and the second active electrode on the insulating layer layer, a second source electrode and a second drain electrode located on the insulating layer and connected to both ends of the second active layer, covering the second active layer, the second source electrode, and the second drain electrode the flat layer; the second source electrode is connected to the first drain electrode.
  • the photoelectric thin film transistor further includes a first top gate located on the flat layer and corresponding to the first active layer.
  • it also includes a storage capacitor structure located on the substrate, and the storage capacitor structure is electrically connected to the photoelectric thin film transistor and/or the switching thin film transistor.
  • the present invention provides a manufacturing method of a light sensing device, comprising:
  • first bottom gate electrode forming a first bottom gate electrode, a second bottom gate electrode, and an insulating layer covering the first bottom gate electrode and the second bottom gate electrode on the substrate;
  • a perovskite layer is formed on the first indium gallium zinc oxide layer, the first indium gallium zinc oxide layer and the perovskite layer constitute a first active layer, and the second indium gallium zinc oxide layer constitutes a first active layer Two active layers;
  • a patterned metal layer is formed on the insulating layer as a first source electrode and a first drain electrode connected to both ends of the first active layer, and a second source electrode and a first drain electrode connected to both ends of the second active layer a source electrode and a second drain electrode to form a photoelectric thin film transistor and a switching thin film transistor connected with the photoelectric thin film transistor.
  • the step of forming a perovskite layer on the first indium gallium zinc oxide layer includes:
  • the perovskite material is etched based on the photoresist layer to form the perovskite layer.
  • the first active layer further includes a first graphene layer on the perovskite layer.
  • the second active layer further includes a second graphene layer on the second indium gallium zinc oxide layer.
  • it also includes forming a flat layer covering the patterned metal layer, the first active layer, and the second active layer.
  • the method further includes forming a first top gate corresponding to the first active layer on the flat layer.
  • the present invention provides a display panel, including a liquid crystal panel, and the light sensing device as described in the first item above on the liquid crystal panel, wherein the light sensing device includes:
  • the photoelectric thin film transistor located on the substrate, the photoelectric thin film transistor comprising a first active layer;
  • a switching thin film transistor located on the substrate and connected to the photoelectric thin film transistor, the switching thin film transistor comprising a second active layer;
  • the first active layer includes a first indium gallium zinc oxide layer and a perovskite layer on the first indium gallium zinc oxide layer
  • the second active layer includes a second indium gallium zinc oxide layer material layer.
  • the first active layer further includes a first graphene layer on the perovskite layer.
  • the second active layer further includes a second graphene layer on the second indium gallium zinc oxide layer.
  • the photoelectric thin film transistor comprises: a first bottom gate on the substrate, an insulating layer covering the first bottom gate, the first active layer on the insulating layer, A first source electrode and a first drain electrode located on the insulating layer and connected to both ends of the first active layer, a flat layer covering the first active layer, the first source electrode, and the first drain electrode .
  • the switching thin film transistor comprises: a second bottom gate on the substrate, the insulating layer covering the second bottom gate, and the second active electrode on the insulating layer layer, a second source electrode and a second drain electrode located on the insulating layer and connected to both ends of the second active layer, covering the second active layer, the second source electrode, and the second drain electrode the flat layer; the second source electrode is connected to the first drain electrode.
  • the photoelectric thin film transistor further includes a first top gate located on the flat layer and corresponding to the first active layer.
  • it also includes a storage capacitor structure located on the substrate, and the storage capacitor structure is electrically connected to the photoelectric thin film transistor and/or the switching thin film transistor.
  • the invention provides a light sensing device, a manufacturing method thereof, and a display panel, comprising a photoelectric thin film transistor on a substrate and a switching thin film transistor connected thereto, wherein the photoelectric thin film transistor and the switching thin film transistor comprise a first active layer and a second active layer.
  • an active layer the first active layer includes a first indium gallium zinc oxide layer and a perovskite layer on the first indium gallium zinc oxide layer
  • the second active layer includes a second indium gallium zinc oxide layer Therefore, the photoelectric conversion efficiency of the photoelectric thin film transistor can be improved, the absorption of the light source by the switching thin film transistor can be reduced, and the light-induced leakage current can be reduced.
  • FIG. 1 is a schematic structural diagram of a light sensing device provided by an embodiment of the present invention.
  • FIG. 2 is a schematic flowchart of a method for fabricating a light sensing device according to an embodiment of the present invention
  • FIG. 3 is a schematic flowchart of a method for making a perovskite layer provided in an embodiment of the present invention
  • 4a-4c are schematic structural diagrams of the perovskite layer provided in the embodiment of the present invention during the fabrication process;
  • FIG. 5 is a schematic structural diagram of a display panel provided by an embodiment of the present invention.
  • a first feature "on” or “under” a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them.
  • the first feature being “above”, “over” and “above” the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.
  • Embodiments of the present invention provide a light sensing device.
  • FIG. 1 is a schematic structural diagram of a light sensing device provided by an embodiment of the present invention.
  • the light sensing device 10 includes a substrate 11 and a photoelectric thin film transistor (Sensor TFT) 12 and a switching thin film transistor (Switch TFT) 13 located on the substrate 11.
  • the Sensor TFT12 is connected with Switch TFT13.
  • the Sensor TFT12 converts the optical signal of the laser light source into an electrical signal
  • the Switch The TFT 13 has a timing control function. Connect the Switch TFT13 to the Sensor TFT12 to control the Sensor periodically
  • the signal generated by the TFT12 flows out, that is to say, the signal generated by the laser is accumulated to a certain intensity before the Switch TFT13 is turned on, and then the signal is exported by the Switch TFT13, which can ensure that the electrical signal strength can be accumulated to a sufficient strength, which is easier to identify.
  • the Sensor TFT 12 includes: a first bottom gate 121 on the substrate 11, an insulating layer 14 covering the first bottom gate 121, a first active layer 122 on the insulating layer 14, and a first active layer 122 on the insulating layer
  • the first source electrode 123 and the first drain electrode 124 connected to both ends of the first active layer 122 on 14 cover the flat layer 15 of the first active layer 122 , the first source electrode 123 , and the first drain electrode 124 .
  • the Switch TFT 13 includes: a second bottom gate 131 on the substrate 11, an insulating layer 14 covering the second bottom gate 131, a second active layer 132 on the insulating layer 14, and a second active layer 132 on the insulating layer 14.
  • the second source electrode 133 and the second drain electrode 134 connected to both ends of the source layer 132 cover the flat layer 15 of the second active layer 132 , the second source electrode 133 , and the second drain electrode 134 .
  • the first active layer 122 determines the photoelectric conversion capability.
  • the three commonly used active layers are amorphous silicon (a-Si), indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), low temperature polysilicon (Low Temperature Poly-silicon, LTPS).
  • the TFT 13 Due to Sensor TFT12 and Switch
  • the TFT 13 is fabricated on the substrate 11 at the same time, and based on the same process, the active layers for the two are preferably made of the same material. It is found that the carrier mobility is LTPS when voltage is applied to the gate, source and drain. > IGZO > a-Si, that is, the transmission speed and switching performance of Switch TFT13 are LTPS > IGZO > a-Si, then the photoelectric conversion effect of Sensor TFT12 is LTPS > IGZO > a-Si.
  • the active layer of Sensor TFT12 As the active layer of Sensor TFT12, it needs to have the highest photoelectric conversion effect as possible, but as a Switch The active layer of the TFT 13 needs to reduce the absorption of the light source as much as possible to reduce the photo-induced leakage current.
  • IGZO has good overall uniformity in large-size panels, and the price and cost are relatively moderate, the advantages of applying IGZO to larger-area display devices are obvious, so IGZO is selected as the active layer.
  • the active layer based on IGZO satisfies the transmission speed and switching performance of Switch TFT13 and the low light source absorption intensity, while for Sensor TFT12, when IGZO is used as the photosensitive active layer, the photoelectric conversion effect is poor.
  • IGZO has a small wavelength absorption range for the light source, and IGZO as an active layer generates fewer carriers when irradiated by laser light, so it cannot efficiently convert laser light into electrical signals. Therefore, it is necessary to improve the active layer based on IGZO.
  • the absorption intensity of the layer for the light source is very small.
  • the second active layer 132 includes a second indium gallium zinc oxide (IGZO) layer 1321
  • the first active layer 122 includes a first indium gallium zinc oxide (IGZO) layer 1221 and a layer located in the first indium gallium zinc oxide (IGZO) layer 1221 Perovskite layer 1222 on gallium zinc oxide layer 1221.
  • the perovskite layer 1222 may be MAPbI3g perovskite.
  • the first active layer 122 may further include a first graphene layer 1223 on the perovskite layer 1222 , and a first top gate 125 on the flat layer 15 corresponding to the first active layer 122 .
  • the first graphene layer 1223 is a double layer.
  • the second active layer 132 may further include a second graphene layer 1322 on the second indium gallium zinc oxide layer 1321 to increase the conductivity of the second active layer 132 .
  • a second top gate 135 located on the flat layer 15 and corresponding to the second active layer 132 can also be added to realize dual gate voltage control.
  • the light sensing device 10 may further include a storage capacitor structure (not shown in FIG. 1 ) on the substrate 11 , the storage capacitor structure (C ST ) is electrically connected to the Sensor TFT12 and/or the Switch TFT13 , that is, the C ST can be connected to the Sensor TFT12 or the Switch TFT13 individually, or electrically connected to both the Sensor TFT12 and the Switch TFT13, and the connection mode of the C ST and the two TFTs is not limited.
  • CST can store charges and release them when they need to be released, which can improve the signal release intensity.
  • a perovskite layer 1222 is introduced on the IGZO layer (the first indium gallium zinc oxide layer 1221 ) of the Sensor TFT 12 , which can significantly improve the first active layer of the Sensor TFT 12 . 122 photoelectric conversion efficiency.
  • the double-layer graphene (the first graphene layer 1223 ) is introduced into the first active layer 122 due to its adjustable band gap, and the graphene band gap can be adjusted when the first top gate 125 is powered on. change, so that the light absorption band of the Sensor TFT12 can be adjusted as needed.
  • the embodiment of the present invention further provides a manufacturing method applied to the above-mentioned light sensing device 10 , so the reference numerals of the structure in FIG. 1 are continued.
  • FIG. 2 is a schematic flowchart of a manufacturing method of a light sensing device provided by an embodiment of the present invention.
  • the manufacturing method of the light sensing device 10 includes the following steps S1-S5.
  • Step S1 providing the substrate 11 .
  • the substrate 11 may be a glass substrate or other transparent materials.
  • Step S2 forming the first bottom gate 121 and the second bottom gate 131 and the insulating layer 14 covering the first bottom gate 121 and the second bottom gate 131 on the substrate 11 .
  • the first bottom gate 121 and the second bottom gate 131 may be made of the same metal material, such as Cr, W, Ti, Ta, Mo, Al, Cu and other metals.
  • physical vapor deposition Physical Vapor Deposition
  • PVD Physical Vapor Deposition
  • CVD chemical vapor deposition
  • Step S3 forming a first indium gallium zinc oxide layer 1221 and a second indium gallium zinc oxide layer 1321 corresponding to the first bottom gate electrode 121 and the second bottom gate electrode 131 on the insulating layer 14 .
  • the manufacturing method of the first indium gallium zinc oxide layer 1221 and the second indium gallium zinc oxide layer 1321 is the same as that of the first bottom gate 121 and the second bottom gate 131 except that the material is IGZO.
  • Step S4 forming a perovskite layer 1222 on the first indium gallium zinc oxide layer 1221 .
  • the first indium gallium zinc oxide layer 1221 and the perovskite layer 1222 constitute the first active layer 122
  • the second indium gallium zinc oxide layer 1321 constitutes the second active layer 132 .
  • step S4 it may further include: forming a first graphene layer 1223 on the perovskite layer 1222, then the first indium gallium zinc oxide layer 1221, the perovskite layer 1222, and the first graphene layer 1223 forms the second active layer 122 .
  • the perovskite layer 1222 may be MAPbI3g perovskite.
  • the second graphene layer 1322 may also be formed on the second indium gallium zinc oxide layer 1321 at the same time.
  • FIG. 3 is a schematic flowchart of a method for fabricating a perovskite layer provided by an embodiment of the present invention.
  • Schematic diagram of the structure, the step S4 of forming the perovskite layer 1222 includes:
  • Step S41 depositing the perovskite material 16 on the first indium gallium zinc oxide layer 1221 , the second indium gallium zinc oxide layer 1321 , and the insulating layer 14 .
  • Step S41 can be completed by any of the above deposition methods, and the structure after the completion of step S41 is shown in FIG. 4a.
  • Step S42 preparing a photoresist layer 1224 over the perovskite material 16 corresponding to the first indium gallium zinc oxide layer 1221 .
  • a photomask may be used to form a photoresist layer 1224 corresponding to the first indium gallium zinc oxide layer 1221 over the perovskite material 16 .
  • Step S43 etching the perovskite material 16 based on the photoresist layer 1224 to form the perovskite layer 1222 .
  • the perovskite material 16 not covering the photoresist layer 1224 is etched away, and the perovskite material 16 under the photoresist 1224 remains to form the perovskite layer 1222, and then the photoresist layer 1224 is removed.
  • the structure after step S43 is completed is shown in FIG. 4c.
  • Step S5 forming a patterned metal layer 17 on the insulating layer 14 as the first source electrode 123 and the first drain electrode 124 connected to both ends of the first active layer 122 and the second active layer 132
  • the second source electrode 133 and the second drain electrode 134 are connected to the terminals to form the photoelectric thin film transistor 12 and the switching thin film transistor 13 connected to the photoelectric thin film transistor 12 .
  • a layer of metal may be deposited on the insulating layer 14 , the first active layer 122 and the second active layer 132 first, and then the patterned metal layer 17 may be formed by a photolithography process.
  • the first source electrode 123 and the first drain electrode 124 are connected to both ends of the first active layer 122, and the second source electrode 133 and the second drain electrode 134 are connected to both ends of the second active layer 132.
  • the first drain electrode 124 is connected to the second source electrode 133 to turn on the Sensor TFT12 and the Switch TFT13, make the electrical signal of Sensor TFT12 flow to Switch TFT13, Switch The TFT 13 periodically controls the flow of electrical signals to the display area (not shown in the figure).
  • the manufacturing method of the photosensitive device may further include forming a flat layer 15 covering the patterned metal layer 17 , the first active layer, and the second active layer. It may further include forming a first top gate 125 corresponding to the first active layer 122 on the flat layer 15 . It may further include forming a second top gate 135 corresponding to the second active layer 132 on the flat layer 15 .
  • the manufacturing method of the photosensitive device provided by the embodiment of the present invention adopts a special process of photolithography, and only forms the perovskite layer 1222 on the first indium gallium zinc oxide layer 1221 to improve the photoelectric conversion efficiency of the photosensitive device 10 .
  • a first graphene layer 1223 is formed on the perovskite layer 1222, so that the band gap of the first active layer 122 of the Sensor TFT 12 can be adjusted, and the wavelength band of light absorption can be adjusted as required.
  • the perovskite material is not formed on the Switch
  • the second active layer 132 of the TFT13 can reduce the switching The absorption of the light source by the TFT13 reduces photoelectric leakage.
  • Embodiments of the present invention further provide a display panel 20 including the above-mentioned light sensing device 10 .
  • FIG. 5 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
  • the display panel 20 includes a liquid crystal panel 21 and a light sensing device 10 located on the liquid crystal panel 21 (Open Cell).
  • the liquid crystal panel 21 includes an array substrate, a color filter substrate, and a color resist layer and a liquid crystal layer located between the array substrate and the color filter substrate. These are conventional arrangements of a liquid crystal panel, so they are not shown in FIG. 5 .
  • the light sensing device 10 is connected to the liquid crystal panel 21 through a first bonding glue 22
  • the display panel 20 further includes a cover plate 24 connected to the light sensing device 10 through a second bonding glue 23 .
  • a sensor TFT 12 with a photosensitive function, a Sensor TFT 12 and a Switch are distributed on the substrate 11 on the whole surface.
  • the TFT 13 can control a plurality of display areas. It should be noted that the Sensor TFT12 and the Switch TFT13 are actually connected as shown in Figure 1. Since Figure 5 shows the overall structure, the connection relationship is not shown. Wherein, FIG. 5 also shows the storage capacitor structure 14 mentioned above, and its connection relationship with the Sensor TFT 12 and the Switch TFT 13 is also not shown in FIG. 5 .
  • the display panel 20 provided by the implementation of the present invention integrates the laser sensing function in the display panel 20, so that the liquid crystal display can sense external laser light, and at the same time transmit the sensed laser signal to the display, and the liquid crystal display generates a corresponding signal at the laser scanning position, thereby indicating A color change occurs at the corresponding position of the LCD.

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Abstract

一种光感应器件（10）及其制作方法、显示面板，包括基板（11）上的光电薄膜晶体管（12）和与其连接的开关薄膜晶体管（13），所述光电薄膜晶体管（12）和开关薄膜晶体管（13）包括第一有源层（122）和第二有源层（132），所述第一有源层（122）包括第一铟镓锌氧化物层（1221）和位于所述第一铟镓锌氧化物层（1221）上的钙钛矿层（1222），所述第二有源层（132）包括第二铟镓锌氧化物层（1321）。

Description

一种光感应器件及其制作方法、显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种光感应器件及其制作方法、显示面板。
 背景技术
薄膜晶体管液晶显示器（Thin Film Transistor-Liquid Crystal Display, TFT-LCD)因具有轻、薄、小等特点，同时功耗低、无辐射、制造成本相对较低，在目前平板显示行业应用较为广泛。
为拓宽液晶显示器商用及家用功能，现将诸多功能集成在显示器中，如色温感测，激光感测，气体感测等，提高了液晶显示器可应用场景。但诸多集成功能均处在新开发阶段，尚有较多工艺制程及相关设计需要完善，以便提高多种集成功能液晶显示器的性能。
 技术问题
本发明提供一种光感应器件及其制作方法、显示面板，旨在提高光感应器件的光电转换效率，同时实现光感应器件带隙可调控。
 技术解决方案
一方面，本发明提供一种光感应器件，包括：
基板；
位于所述基板上的光电薄膜晶体管，所述光电薄膜晶体管包括第一有源层；
位于所述基板上且与所述光电薄膜晶体管连接的开关薄膜晶体管，所述开关薄膜晶体管包括第二有源层；
其中，所述第一有源层包括第一铟镓锌氧化物层和位于所述第一铟镓锌氧化物层上的钙钛矿层，所述第二有源层包括第二铟镓锌氧化物层。
进一步优选的，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
进一步优选的，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
进一步优选的，所述光电薄膜晶体管包括：位于所述基板上的第一底栅极，覆盖所述第一底栅极的绝缘层，位于所述绝缘层上的所述第一有源层，位于所述绝缘层上与所述第一有源层两端连接的第一源极和第一漏极，覆盖所述第一有源层、第一源极、及第一漏极的平坦层。
进一步优选的，所述开关薄膜晶体管包括：位于所述基板上的第二底栅极，覆盖所述第二底栅极的所述绝缘层，位于所述绝缘层上的所述第二有源层，位于所述绝缘层上与所述第二有源层两端连接的第二源极和第二漏极，覆盖所述第二有源层、第二源极、及第二漏极的所述平坦层；所述第二源极与所述第一漏极连接。
进一步优选的，所述光电薄膜晶体管还包括位于所述平坦层上且与所述第一有源层对应的第一顶栅极。
进一步优选的，还包括位于所述基板上的存储电容结构，所述存储电容结构与所述光电薄膜晶体管和/或开关薄膜晶体管电连接。
另一方面，本发明提供一种光感应器件的制作方法，包括：
提供基板；
在所述基板上形成第一底栅极、第二底栅极、及覆盖所述第一底栅极和第二底栅极的绝缘层；
在所述绝缘层上形成与所述第一底栅极和第二底栅极对应的第一铟镓锌氧化物层和第二铟镓锌氧化物层；
在所述第一铟镓锌氧化物层上形成钙钛矿层，所述第一铟镓锌氧化物层和钙钛矿层组成第一有源层，所述第二铟镓锌氧化物层组成第二有源层；
在所述绝缘层上形成图案化金属层，作为与所述第一有源层两端连接的第一源极和第一漏极、及与所述第二有源层两端连接的第二源极和第二漏极，以形成光电薄膜晶体管和与所述光电薄膜晶体管连接的开关薄膜晶体管。
进一步优选的，在所述第一铟镓锌氧化物层上形成钙钛矿层的步骤，包括：
在所述第一铟镓锌氧化物层、第二铟镓锌氧化物层、及绝缘层上沉积钙钛矿材料；
在对应所述第一铟镓锌氧化物层的所述钙钛矿材料上方制备光刻胶层；
基于所述光刻胶层对所述钙钛矿材料进行蚀刻，以形成所述钙钛矿层。
进一步优选的，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
进一步优选的，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
进一步优选的，还包括形成覆盖所述图案化的金属层、第一有源层、及第二有源层的平坦层。
进一步优选的，还包括在所述平坦层上形成对应所述第一有源层的第一顶栅极。
再一方面，本发明提供一种显示面板，包括液晶面板、及位于所述液晶面板上如上述第一项所述的光感应器件，所述光感应器件包括：
基板；
位于所述基板上的光电薄膜晶体管，所述光电薄膜晶体管包括第一有源层；
位于所述基板上且与所述光电薄膜晶体管连接的开关薄膜晶体管，所述开关薄膜晶体管包括第二有源层；
其中，所述第一有源层包括第一铟镓锌氧化物层和位于所述第一铟镓锌氧化物层上的钙钛矿层，所述第二有源层包括第二铟镓锌氧化物层。
进一步优选的，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
进一步优选的，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
进一步优选的，所述光电薄膜晶体管包括：位于所述基板上的第一底栅极，覆盖所述第一底栅极的绝缘层，位于所述绝缘层上的所述第一有源层，位于所述绝缘层上与所述第一有源层两端连接的第一源极和第一漏极，覆盖所述第一有源层、第一源极、及第一漏极的平坦层。
进一步优选的，所述开关薄膜晶体管包括：位于所述基板上的第二底栅极，覆盖所述第二底栅极的所述绝缘层，位于所述绝缘层上的所述第二有源层，位于所述绝缘层上与所述第二有源层两端连接的第二源极和第二漏极，覆盖所述第二有源层、第二源极、及第二漏极的所述平坦层；所述第二源极与所述第一漏极连接。
进一步优选的，所述光电薄膜晶体管还包括位于所述平坦层上且与所述第一有源层对应的第一顶栅极。
进一步优选的，还包括位于所述基板上的存储电容结构，所述存储电容结构与所述光电薄膜晶体管和/或开关薄膜晶体管电连接。
 有益效果
本发明提供一种光感应器件及其制作方法、显示面板，包括基板上的光电薄膜晶体管和与其连接的开关薄膜晶体管，所述光电薄膜晶体管和开关薄膜晶体管包括第一有源层和第二有源层，所述第一有源层包括第一铟镓锌氧化物层和位于所述第一铟镓锌氧化物层上的钙钛矿层，所述第二有源层包括第二铟镓锌氧化物层，因而可以提高光电薄膜晶体管的光电转换效率，且可以降低开关薄膜晶体管对光源的吸收，减少光致漏电流。
 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1是本发明实施例提供的光感应器件的结构示意图；
图2是本发明实施例提供的光感应器件的制作方法的流程示意图；
图3是本发明实施例提供的钙钛矿层的制作方法的流程示意图；
图4a-4c是本发明实施例提供的钙钛矿层的制作过程中的结构示意图;
图5是本发明实施例提供的显示面板的结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本发明实施例提供一种光感应器件。
请参阅图1，图1是本发明实施例提供的光感应器件的结构示意图。该光感应器件10包括基板11和位于基板11上的光电薄膜晶体管(Sensor TFT)12和开关薄膜晶体管(Switch TFT)13，该Sensor TFT12与Switch TFT13连接。
在本实施例中，Sensor TFT12将激光光源的光信号转换为电信号，Switch TFT13具有时序控制功能。将Switch TFT13与Sensor TFT12连接可以周期性控制Sensor TFT12产生的信号流出，也就是说使得激光产生的信号在Switch TFT13打开前，信号累计到一定强度，再由Switch TFT13导出，这样可以保证电信号强度可以累积到足够的强度，更易被识别。
在本实施例中，Sensor TFT12包括：位于基板11上的第一底栅极121，覆盖第一底栅极121的绝缘层14，位于绝缘层14上的第一有源层122，位于绝缘层14上与第一有源层122两端连接的第一源极123和第一漏极124，覆盖第一有源层122、第一源极123、及第一漏极124的平坦层15。Switch TFT13包括：位于基板11上的第二底栅极131，覆盖第二底栅极131的绝缘层14，位于绝缘层14上的第二有源层132，位于绝缘层14上与第二有源层132两端连接的第二源极133和第二漏极134，覆盖第二有源层132、第二源极133、及第二漏极134的平坦层15。
其中，Sensor TFT12中将激光光源光信号转换为电信号的重要结构是第一有源层122，决定了光电转换能力。目前三种常用的有源层为非晶硅(a-Si)、铟镓锌氧化物(Indium Gallium Zinc Oxide, IGZO)、低温多晶硅(Low Temperature Poly-silicon, LTPS)。
由于Sensor TFT12和Switch TFT13是同时在基板11上制作，基于同一道工艺制程，两者产生作用的有源层优选为同一种材料。研究发现，在栅极、源极、漏极加电压的情况下，载流子迁移率为LTPS > IGZO > a-Si，即Switch TFT13的传输速度及开关性能为LTPS > IGZO > a-Si，则Sensor TFT12的光电转化效果为LTPS>IGZO>a-Si。作为Sensor TFT12的有源层需要尽可能具有高的光电转换效果，但是作为Switch TFT13的有源层需要尽可能降低对光源的吸收，减少光致漏电流。同时由于IGZO在大尺寸面板整体均匀性较好，且价格成本相对适中，应用于更大面积显示器件的优势较为明显，所以选用IGZO作为有源层。基于IGZO的有源层，满足了Switch TFT13的传输速度和开关性能以及低的光源吸收强度，而对于Sensor TFT12，IGZO作为感光有源层时，光电转换效果差。这是因为IGZO对光源的波长吸收范围较小，而且IGZO作为有源层在接受激光照射时产生的载流子较少，无法高效的将激光转换为电信号，因此需要提高基于IGZO的有源层对于光源的吸收强度。
在本实施例中，第二有源层132包括第二铟镓锌氧化物(IGZO)层1321，第一有源层122包括第一铟镓锌氧化物(IGZO)层1221和位于第一铟镓锌氧化物层1221上的钙钛矿层1222。其中，钙钛矿层1222可以为MAPbI3g钙钛矿。通过特殊工艺（在下文的制作工艺中介绍），将钙钛矿层1222引入第一有源层122，可拓宽IGZO吸收的波长范围及强度，明显提高Sensor TFT12的光电转换效果。
优选的，第一有源层122还可以包括位于钙钛矿层1222上的第一石墨烯层1223，以及位于平坦层15上与第一有源层122对应的的第一顶栅极125。其中，第一石墨烯层1223为双层。通过第一顶栅极125对第一石墨烯层1223外加电压，可以改变第一有源层122的带隙，即可根据需求对第一有源层122带隙进行调控。
优选的，第二有源层132还可以包括位于第二铟镓锌氧化物层1321上的第二石墨烯层1322，以增加第二有源层132的导电性。在本实施例中，也可以增加位于平坦层15上且与第二有源层132对应的第二顶栅极135，以实现双栅极电压控制。
在一些实施例中，该光感应器件10还可以包括位于基板11上的存储电容结构（图1中未示出），所述存储电容结构（C ST）与Sensor TFT12和/或Switch TFT13电连接，即C ST可与Sensor TFT12或者Switch TFT13单独连接、或者与Sensor TFT12和Switch TFT13全部电连接，C ST与两个TFT的连接方式不做限制。C ST作为存储电容可以存储电荷，需要释放电荷时再进行释放，可以提高信号释放强度。
本发明实施例提供的光感应器件10，针对Sensor TFT12的IGZO层（第一铟镓锌氧化物层1221），引入位于其上方的钙钛矿层1222，可明显提高Sensor TFT12的第一有源层122的光电转换效率。同时利用双层石墨烯（第一石墨烯层1223）带隙可调控的特性，将其引入第一有源层122，可在第一顶栅极125加电情况下，对石墨烯带隙进行改变，从而可以根据需要调控Sensor TFT12的光吸收波段。
本发明实施例另提供一种应用于上述光感应器件10的制作方法，因此继续引用图1中的结构标号。
请一并参阅图2，图2是本发明实施例提供的光感应器件的制作方法的流程示意图，该光感应器件10的制作方法包括如下步骤S1-S5。
步骤S1：提供基板11。
基板11可以为玻璃基板或其他透明材质。
步骤S2：在基板11上形成第一底栅极121和第二底栅极131、及覆盖第一底栅极121和第二底栅极131的绝缘层14。
在本实施例中，第一底栅极121和第二底栅极131可以为同一种金属材料，比如Cr、W、Ti、Ta、Mo、Al、Cu等金属。具体的，可以采用物理气相沉积（Physical Vapor Deposition, PVD）沉积上述金属，然后通过涂覆光刻胶、曝光、显影和刻蚀等工艺的构图得到第一底栅极121和第二底栅极131，最后采用化学气相沉积（Chemical Vapor Deposition, CVD）形成覆盖第一底栅极121和第二底栅极131的绝缘层14。
步骤S3：在绝缘层14上形成与第一底栅极121和第二底栅极131对应的第一铟镓锌氧化物层1221和第二铟镓锌氧化物层1321。
其中，第一铟镓锌氧化物层1221和第二铟镓锌氧化物层1321的制作方法，与第一底栅极121和第二底栅极131的制作方法相同，只是材料为IGZO。
步骤S4：在第一铟镓锌氧化物层1221上形成钙钛矿层1222。
在一实施例中，第一铟镓锌氧化物层1221和钙钛矿层1222组成第一有源层122，所述第二铟镓锌氧化物层1321组成第二有源层132。
在另一实施例中，步骤S4后还可以包括：在钙钛矿层1222上形成第一石墨烯层1223，则第一铟镓锌氧化物层1221、钙钛矿层1222、及第一石墨烯层1223组成所述第二有源层122。其中，钙钛矿层1222可以为MAPbI3g钙钛矿。也可以同时在第二铟镓锌氧化物层1321上形成第二石墨烯层1322。
具体的，请参阅图3和图4a-4c，图3是本发明实施例提供的钙钛矿层的制作方法的流程示意图，图4a-4c是本发明实施例提供的钙钛矿层的制作过程中的结构示意图，形成钙钛矿层1222的步骤S4包括：
步骤S41：在第一铟镓锌氧化物层1221、第二铟镓锌氧化物层1321、及绝缘层14上沉积钙钛矿材料16。
可以利用上述任一沉积方法完成步骤S41，步骤S41完成后的结构如图4a所示。
步骤S42：在对应第一铟镓锌氧化物层1221的钙钛矿材料16上方制备光刻胶层1224。
如图4b所示，可以采用光罩在钙钛矿材料16上方、形成对应第一铟镓锌氧化物层1221的光刻胶层1224。
步骤S43：基于光刻胶层1224对钙钛矿材料16进行蚀刻，以形成钙钛矿层1222。
其中，没有覆盖光刻胶层1224的钙钛矿材料16被蚀刻掉，光刻胶1224下方的钙钛矿材料16保留以形成所述钙钛矿层1222，然后去除所述光刻胶层1224。步骤S43完成后的结构如图4c所示。
步骤S5：在绝缘层14上形成图案化金属层17，作为与所述第一有源层122两端连接的第一源极123和第一漏极124、及与第二有源层132两端连接的第二源极133和第二漏极134，以形成光电薄膜晶体管12和与所述光电薄膜晶体管12连接的开关薄膜晶体管13。
在本实施例中，可以先在绝缘层14、第一有源层122及第二有源层132上沉积一层金属，然后通过光刻工艺形成图案化金属层17。其中，与第一有源层122两端连接的为第一源极123和第一漏极124，与第二有源层132两端连接的为第二源极133和第二漏极134，第一漏极124与第二源极133连接，以导通Sensor TFT12和Switch TFT13，使Sensor TFT12的电信号流向Switch TFT13，Switch TFT13周期性控制电信号的流到显示区（图中未示出）。
该光感应器件的制作方法还可以包括形成覆盖所述图案化金属层17、第一有源层、及第二有源层的平坦层15。还可以包括在所述平坦层15上形成对应所述第一有源层122的第一顶栅极125。还可以包括在所述平坦层15上形成对应所述第二有源层132的第二顶栅极135。
本发明实施例提供的光感应器件的制作方法，采用光刻的特殊工艺，只在第一铟镓锌氧化物层1221上形成钙钛矿层1222，以提高光感应器件10的光电转换效率。在钙钛矿层1222上形成第一石墨烯层1223，使Sensor TFT12的第一有源层122带隙可调控，可以根据需要调整光吸收的波段。另外在钙钛矿层1222的制程中，钙钛矿材料没有形成于Switch TFT13的第二有源层132，可以降低Switch TFT13对光源的吸收，减少光致漏电。
本发明实施例还提供一种包括上述光感应器件10的显示面板20。
请参阅图5，图5是本发明实施例提供的显示面板的结构示意图。该显示面板20包括液晶面板21和位于液晶面板21（Open Cell）上的光感应器件10。液晶面板21包括阵列基板、彩膜基板、以及位于所述阵列基板和彩膜基板之间的色阻层和液晶层等，这些是液晶面板常规的设置，因此不在图5中示出。其中，光感应器件10通过第一贴合胶水22与所述液晶面板21连接，该显示面板20还包括通过第二贴合胶水23与光感应器件10连接的盖板24。
在本实施例中，基板11上分布着整面性的具有感光功能的Sensor TFT12，一个Sensor TFT12和一个Switch TFT13可以控制多个显示区。需要注意的是，Sensor TFT12和Switch TFT13实际上如图1所示有连接，因图5示出的是整体结构，就没有显示出其中的连接关系。其中，图5还示出了上面提及的存储电容结构14，其与Sensor TFT12和Switch TFT13的连接关系也没有在图5中示出。
本发明实施提供的显示面板20将激光感应功能集成在显示面板20中，实现液晶显示器能够感应外部激光，同时将感应到的激光信号传递给显示器，液晶显示器在激光扫描位置产生相应信号，从而指示液晶显示器的相应位置发生色彩变化。
以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。

Claims (20)

  1. 一种光感应器件，其包括：
    基板；
    位于所述基板上的光电薄膜晶体管，所述光电薄膜晶体管包括第一有源层；
    位于所述基板上且与所述光电薄膜晶体管连接的开关薄膜晶体管，所述开关薄膜晶体管包括第二有源层；
    其中，所述第一有源层包括第一铟镓锌氧化物层和位于所述第一铟镓锌氧化物层上的钙钛矿层，所述第二有源层包括第二铟镓锌氧化物层。
  2. 根据权利要求1所述的光感应器件，其中，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
  3. 根据权利要求1所述的光感应器件，其中，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
  4. 根据权利要求1所述的光感应器件，其中，所述光电薄膜晶体管包括：位于所述基板上的第一底栅极，覆盖所述第一底栅极的绝缘层，位于所述绝缘层上的所述第一有源层，位于所述绝缘层上与所述第一有源层两端连接的第一源极和第一漏极，覆盖所述第一有源层、第一源极、及第一漏极的平坦层。
  5. 根据权利要求4所述的光感应器件，其中，所述开关薄膜晶体管包括：位于所述基板上的第二底栅极，覆盖所述第二底栅极的所述绝缘层，位于所述绝缘层上的所述第二有源层，位于所述绝缘层上与所述第二有源层两端连接的第二源极和第二漏极，覆盖所述第二有源层、第二源极、及第二漏极的所述平坦层；所述第二源极与所述第一漏极连接。
  6. 根据权利要求4所述的光感应器件，其中，所述光电薄膜晶体管还包括位于所述平坦层上且与所述第一有源层对应的第一顶栅极。
  7. 根据权利要求1所述的光感应器件，其还包括位于所述基板上的存储电容结构，所述存储电容结构与所述光电薄膜晶体管和/或开关薄膜晶体管电连接。
  8. 一种光感应器件的制作方法，其包括：
    提供基板；
    在所述基板上形成第一底栅极、第二底栅极、及覆盖所述第一底栅极和第二底栅极的绝缘层；
    在所述绝缘层上形成与所述第一底栅极和第二底栅极对应的第一铟镓锌氧化物层和第二铟镓锌氧化物层；
    在所述第一铟镓锌氧化物层上形成钙钛矿层，所述第一铟镓锌氧化物层和钙钛矿层组成第一有源层，所述第二铟镓锌氧化物层组成第二有源层；
    在所述绝缘层上形成图案化金属层，作为与所述第一有源层两端连接的第一源极和第一漏极、及与所述第二有源层两端连接的第二源极和第二漏极，以形成光电薄膜晶体管和与所述光电薄膜晶体管连接的开关薄膜晶体管。
  9. 根据权利要求8所述的光感应器件的制作方法，其中，在所述第一铟镓锌氧化物层上形成钙钛矿层的步骤，包括：
    在所述第一铟镓锌氧化物层、第二铟镓锌氧化物层、及绝缘层上沉积钙钛矿材料；
    在对应所述第一铟镓锌氧化物层的所述钙钛矿材料上方制备光刻胶层；
    基于所述光刻胶层对所述钙钛矿材料进行蚀刻，以形成所述钙钛矿层。
  10. 根据权利要求8所述的光感应器件的制作方法，其中，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
  11. 根据权利要求8所述的光感应器件的制作方法，其中，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
  12. 根据权利要求8所述的光感应器件的制作方法，其还包括形成覆盖所述图案化的金属层、第一有源层、及第二有源层的平坦层。
  13. 根据权利要求12所述的光感应器件的制作方法，其还包括在所述平坦层上形成对应所述第一有源层的第一顶栅极。
  14. 一种显示面板，其包括液晶面板、及位于所述液晶面板上如权利要求1所述的光感应器件。
  15. 根据权利要求14所述的显示面板，其中，所述第一有源层还包括位于所述钙钛矿层上的第一石墨烯层。
  16. 根据权利要求14所述的显示面板，其中，所述第二有源层还包括位于所述第二铟镓锌氧化物层上的第二石墨烯层。
  17. 根据权利要求14所述的显示面板，其中，所述光电薄膜晶体管包括：位于所述基板上的第一底栅极，覆盖所述第一底栅极的绝缘层，位于所述绝缘层上的所述第一有源层，位于所述绝缘层上与所述第一有源层两端连接的第一源极和第一漏极，覆盖所述第一有源层、第一源极、及第一漏极的平坦层。
  18. 根据权利要求17所述的显示面板，其中，所述开关薄膜晶体管包括：位于所述基板上的第二底栅极，覆盖所述第二底栅极的所述绝缘层，位于所述绝缘层上的所述第二有源层，位于所述绝缘层上与所述第二有源层两端连接的第二源极和第二漏极，覆盖所述第二有源层、第二源极、及第二漏极的所述平坦层；所述第二源极与所述第一漏极连接。
  19. 根据权利要求17所述的显示面板，其中，所述光电薄膜晶体管还包括位于所述平坦层上且与所述第一有源层对应的第一顶栅极。
  20. 根据权利要求14所述的显示面板，其还包括位于所述基板上的存储电容结构，所述存储电容结构与所述光电薄膜晶体管和/或开关薄膜晶体管电连接。
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