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WO2014153958A1 - 阵列基板、阵列基板的制造方法以及显示装置 - Google Patents

阵列基板、阵列基板的制造方法以及显示装置 Download PDF

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Publication number
WO2014153958A1
WO2014153958A1 PCT/CN2013/086368 CN2013086368W WO2014153958A1 WO 2014153958 A1 WO2014153958 A1 WO 2014153958A1 CN 2013086368 W CN2013086368 W CN 2013086368W WO 2014153958 A1 WO2014153958 A1 WO 2014153958A1
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WIPO (PCT)
Prior art keywords
layer
gate
electrode
array substrate
region
Prior art date
Application number
PCT/CN2013/086368
Other languages
English (en)
French (fr)
Inventor
金熙哲
宋泳锡
刘圣烈
崔承镇
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP13856064.4A priority Critical patent/EP2991121B1/en
Priority to US14/361,396 priority patent/US9070599B2/en
Publication of WO2014153958A1 publication Critical patent/WO2014153958A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
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    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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    • H01L29/66409—Unipolar field-effect transistors
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Definitions

  • Array substrate method of manufacturing array substrate, and display device
  • Embodiments of the present invention relate to an array substrate, a method of fabricating the array substrate, and a display device. Background technique
  • Liquid Crystal Display has occupied the leading position in the field of flat display due to its image stability, image fidelity, low radiation, space saving and energy saving.
  • a TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • LCD Liquid Crystal Display
  • the liquid crystal panel includes an array substrate and a color filter substrate.
  • the planar schematic view of the array substrate is as shown in FIG. 1 , and a gate line 15 is disposed thereon, perpendicular to the gate line 15 , and a data line 16 and a gate line 15 are disposed.
  • the data line 16 the pixel area is defined by the intersection, the thin film transistor and the pixel electrode 12 are disposed in the pixel area, the gate electrode 2 of the thin film transistor is connected to the gate line 15, the source electrode 9, and the data line 16, are connected and leaked.
  • the pole 8 is connected to the pixel electrode 12 through the passivation layer via hole 11.
  • the driving chip, signal traces, thin film transistors, and storage capacitors may pass through these areas except for possible incomplete light transmission. The light is not affected by the liquid crystal layer, and the correct gray scale cannot be displayed.
  • BM Black Matrix
  • the passivation layer via is generally not disposed over the gate line region, and the capacitance C gs formed between the gate line and the source electrode and the pixel electrode is 30fF-100fF, so the hopping voltage AV P is Between 0.5V and 1.0V; if the passivation layer via is placed over the gate line region, the effective light transmission region can be increased to a large extent, thereby increasing the aperture ratio of the pixel; however, if directly The passivation layer via is disposed above the gate line, and the capacitance c gs formed between the gate line and the source electrode and the pixel electrode becomes 200 fF-500fF, and the jump voltage AVp is between 2.5V and 7.0V. Because the hopping voltage is too large, it may cause image defects such as image flicker or afterimage. Summary of the invention
  • Embodiments of the present invention provide an array substrate having a passivation layer via hole disposed over a gate line region for increasing an effective light transmission region, thereby increasing pixel aperture ratio, increasing light transmittance, increasing resolution, and enhancing Display quality. Further, embodiments of the present invention further provide a method of fabricating the array substrate and a display device using the array substrate.
  • An array substrate includes: a substrate; a plurality of data lines formed on the substrate and extending in a first direction; a plurality of gate lines formed on the substrate crossing the data lines, and Extending in a second direction perpendicular to the first direction; a plurality of pixel regions defined by the plurality of gate lines and the plurality of data lines crossing each other and arranged in a matrix, wherein each of the pixel regions is disposed a thin film transistor and a pixel electrode, wherein the thin film transistor includes: a gate electrode connected to one of the plurality of gate lines; a gate insulating layer disposed over the gate line and the gate electrode; and an active layer formed in the On the gate insulating layer and corresponding to the gate electrode; a drain electrode and a source electrode are disposed opposite to each other above the active layer and have a channel region of the thin film transistor therebetween; a filling layer is disposed on the gate An electrode and the gate line and the drain electrode and the source electrode connected to the gate electrode
  • the fill layer has a thickness of from 5000A to 25000A.
  • the fill layer is a dielectric material.
  • the filling layer is formed by a curing reaction of a photosensitive resin.
  • the channel region is U-shaped with the opening of the U-shape facing away from the data line.
  • the width of the gate line is the same as the width of the channel region.
  • a method for manufacturing an array substrate comprising: S1. preparing a substrate; S2. forming a gate line and a gate electrode on the substrate; S3. forming a gate insulating layer covering the entire substrate on the gate line and the gate electrode; S4. forming a filling layer on the gate insulating layer, the filling layer being formed between the gate electrode and a gate line connected to the gate line and a drain electrode and a source electrode formed later; S5. Place Forming an active layer, a drain electrode, and a source electrode on the substrate of the gate insulating layer and the filling layer; S6.
  • the passivation layer is provided with a passivation layer via hole at a position directly above the gate line and the drain electrode; S7. forming a via hole and the leakage current through the passivation layer on the passivation layer A pole electrode connected to the pole.
  • the step S4 includes:
  • the photosensitive resin in the semi-retained area of the photosensitive resin is removed by an ashing process to expose the gate insulating layer.
  • the step S5 includes:
  • the source-drain metal layer, the doped semiconductor layer, and the semiconductor layer of the photoresist completely removed region are removed by a first etching process
  • Embodiments of the present invention also provide a display device including any of the above array substrates.
  • FIG. 1 is a schematic plan view of an array substrate in the prior art
  • FIG. 2 is a schematic plan view of an array substrate according to an embodiment of the invention.
  • Figure 3 is a cross-sectional view of the array substrate of Figure 2 taken along line A-A';
  • FIG. 4 is a cross-sectional view showing a method of fabricating an array substrate according to an embodiment of the present invention, after forming a gate electrode and a gate insulating layer on a substrate;
  • Figure 5 is a schematic cross-sectional view showing the photosensitive resin layer coated on the substrate of Figure 4;
  • Figure 6 is a cross-sectional view showing a semi-retained region of the photosensitive resin after development of the substrate of Figure 5;
  • Figure 7 is a schematic cross-sectional view showing a region where the photosensitive resin is completely removed after development of the substrate of Figure 5;
  • FIG. 8 is a schematic cross-sectional view showing an etching process performed on the substrate of FIG. 7;
  • Figure 9 is a schematic cross-sectional view showing the substrate of Figure 6 after ashing
  • Figure 10 is a schematic cross-sectional view showing the active layer and the source-drain metal layer sequentially deposited on the substrate of Figure 9;
  • Figure 11 is a cross-sectional view showing the active region, the source electrode, the drain electrode, and the channel region of the active layer formed on the substrate of Figure 10;
  • Figure 12 is a schematic cross-sectional view showing a passivation layer formed on the substrate of Figure 11;
  • FIG. 13 is a schematic cross-sectional view showing a passivation layer via hole on the substrate of FIG. 12;
  • Fig. 14 is a schematic cross-sectional view showing the formation of a pixel electrode on the substrate of Fig. 13. detailed description
  • Embodiment 1 2 is a plan view showing an array substrate according to a first embodiment of the present invention, in which the structure of one pixel unit is shown, and FIG. 3 is a cross-sectional view of the array substrate of FIG. 1 taken along line AA. As shown in FIG. 2 and FIG.
  • the array substrate includes: a substrate 1; a plurality of data lines 16 formed on the substrate 1 and extending in a first direction; and a plurality of gate lines 15 formed at intersection with the data lines 16 On the substrate 1 and extending in a second direction perpendicular to the first direction; a plurality of pixel regions defined by a plurality of gate lines 15 and a plurality of data lines 16 crossing each other and arranged in a matrix, in a plurality of pixel regions A thin film transistor and a pixel electrode 12 are formed in each of them, a gate line 15 for supplying an on signal to the thin film transistor, and a data line 16 for supplying a data signal to the pixel electrode 12.
  • the thin film transistor includes: a gate electrode 2 formed on the substrate 1 and connected to the gate line 15; a gate insulating layer 3 formed on the gate line 15 and the gate electrode 2 and covering the entire substrate; formed on the gate insulating layer 3
  • the active layer 5 is formed with a drain electrode 8 above the active layer and a source electrode 9 opposite to the drain electrode 8 and connected to the data line 16.
  • the source electrode 9 and the drain electrode 8 are realized by the channel region 17 of the active layer. Controlled electrical connection; a passivation layer 10 formed on the source electrode 9, the drain electrode 8, and the channel region 17, wherein a filling layer 4 is formed between the gate electrode and the drain electrode and the source electrode.
  • the filling layer is formed between the gate insulating layer 3 and the active layer 5 as an example, since the filling layer 4 increases the array between the gate line 15 and the drain electrode 8 and the source electrode 9.
  • the thickness direction of the substrate that is, the distance in the z direction, further reduces the capacitance formed between the gate line 15 and the source electrode 9 and the pixel electrode 12.
  • a passivation layer via 11 for connecting the drain electrode 8 and the pixel electrode 12 is opened; compared with FIG. 1 and FIG.
  • the passivation layer is The via hole is disposed directly above the gate line 15, which can greatly increase the effective light transmission area, thereby increasing the aperture ratio of the pixel; the increased effective light transmission area is as shown in the B area; in practical applications, the whole is 23.6 inches.
  • a high-definition (Foil HD, 1920x1080) resolution product can increase the aperture ratio by 5% to 10%.
  • the main function of the filling layer 4 is to increase the distance between the gate insulating layer 3 and the drain electrode 8 and the source electrode 9, thereby reducing the capacitance formed between the gate line 15 and the source electrode 9 and the pixel electrode 12, thus filling the layer 4
  • the example material is a dielectric material, so that the effect of reducing the capacitance is not affected by the addition of the filling layer 4; the filling layer 4 in this embodiment is formed by a curing reaction of the photosensitive resin, so that in addition to not affecting the effect of reducing the capacitance, The difficulty in forming the filling layer 4 is reduced.
  • the filling layer 4 is too large, the thickness of the final product is too large, and if the thickness of the filling layer 4 is too small, the effect of reducing the jump voltage is not obtained.
  • the filling layer The thickness is 5000A-25000A, which will not cause the product to be too thick, and can not increase the jump voltage. Further, the filling layer has a thickness of 15000A.
  • the embodiment of the present invention further increases the effective light transmission area by changing the orientation of the opening of the channel region.
  • the channel region is U-shaped, and the opening of the U-shape faces the extending direction of the data line, such as 17 is shown in FIG. 1, and in this embodiment, the channel region 17 is open to the back of the data line 16; in this case, the width of the gate line required is reduced compared to the prior art, and the width and channel of the gate line 15 are reduced.
  • the width of the region 17 is the same to achieve the normal function; the reduced width of the gate line 15 means that the effective light-transmissive area of the corresponding area is increased, thereby increasing the aperture ratio of the pixel; comparing FIG. 1 and FIG. 2, the increased effective light transmission
  • the area is shown in area C.
  • a 23.6-inch full HD (1920 x 1080) resolution product is used as an example, which can increase the aperture ratio by 2% to 5%.
  • the array substrate of the first embodiment of the present invention is illustrated by using a bottom-gate TFT structure.
  • This is only a TFT structure of the array substrate of the embodiment of the present invention.
  • a commonly used top can also be used.
  • a gate-type TFT structure or a deformed known TFT structure and for a conventional top-gate TFT structure and a deformed known TFT structure, a filling layer is also used to fill between the gate electrode and the drain electrode and the source electrode and/or
  • the U-shaped opening of the channel region faces the data line to increase the aperture ratio of the display device, which are the same as those of the bottom gate type TFT structure, and therefore will not be described herein.
  • the second embodiment of the present invention further provides a method for preparing the above array substrate, which mainly comprises forming a gate line, a gate electrode on the substrate, and forming a gate insulating layer covering the entire substrate on the gate line and the gate electrode; Forming an active layer, a drain electrode, and a source electrode; forming a filling layer between the gate electrode and the drain electrode and the source electrode; forming a passivation layer on the source electrode, the drain electrode, and the channel region; and placing the passivation layer on the gate line And a passivation layer via hole is formed at a position directly above the drain electrode; and a pixel electrode connected to the drain electrode through the passivation layer via hole is formed.
  • a filling layer is formed between the gate electrode and the drain electrode and the source electrode as an example.
  • a method for manufacturing an array substrate according to an embodiment of the present invention mainly includes the following steps: S1. After cleaning the substrate 1, a gate line 15 and a gate electrode 2 are formed on the substrate 1, and a cover is formed on the gate line 15 and the gate electrode 2.
  • a gate line 15 and a gate electrode 2 on the substrate 1 depositing a gate metal film on the substrate 1 (such as the glass substrate 1 or the quartz substrate 1) by magnetron sputtering or thermal evaporation;
  • the film may be a metal such as Cr, W, Ti, Ta, Mo, Al, Cu or the like thereof, or a composite film composed of a plurality of metal thin films; and then the gate metal film is engraved by a patterning process using a conventional mask.
  • the gate insulating layer 3 covering the entire substrate on the gate line 15 and the gate electrode 2.
  • the thickness of the gate insulating layer 3 is 3000A-5000A.
  • the gate insulating layer 3 may be an oxide or a nitride. Or an oxygen-nitrogen compound or the like.
  • a filling layer 4 is formed on the gate insulating layer 3.
  • a filling layer is formed by a photosensitive resin as an example. This step mainly includes:
  • the thickness of the photosensitive resin layer is 5000A-25000A, as shown in FIG. 5;
  • the thickness of the photosensitive resin in the completely remaining region of the photosensitive resin is not changed; the photosensitive resin in the completely removed region of the photoresist is completely removed, as shown in FIG. 7; the photosensitive resin in the semi-retained region of the photosensitive resin is thinned, As shown in FIG. 6; then the gate insulating layer 3 of the photosensitive resin completely removed region is removed by an etching process, and the gate electrode 15 is exposed to form a gate electrode wiring region as shown in FIG. 8; thus, the gate electrode and the trench can be made.
  • the distance between the track regions is constant, preventing the driving voltage of the gate electrode from increasing;
  • the photosensitive resin in the semi-retained area of the photosensitive resin is removed by an ashing process to expose the gate insulating layer 3, as shown in FIG.
  • An active layer, a source electrode 9, and a drain electrode 8 are formed on the gate insulating layer 3 and the filling layer 4, wherein a portion of the active layer between the source electrode 9 and the drain electrode 8 forms a channel region, this embodiment
  • the active layer in the middle includes a semiconductor layer 5 and a doped semiconductor layer 6; the steps mainly include:
  • Source-drain metal layer 7 is deposited by an evaporation method; as shown in FIG. 10; the source-drain metal layer 7 may be a metal or an alloy of Cr, W, Ti, Ta, Mo, Al, Cu, or the like.
  • Metal composite composition
  • the thickness of the photoresist in the completely remaining region of the photoresist is not changed, the photoresist in the completely removed region of the photoresist is completely removed, and the thickness of the photoresist in the semi-reserved region of the photoresist is thinned;
  • the first etching process removes the source-drain metal layer 7, the doped semiconductor layer 6, and the semiconductor layer 5 in the completely removed region of the photoresist to form an active layer pattern;
  • the source-drain metal layer 7 and the doped semiconductor layer 6 of the semi-reserved region of the photoresist are removed by a second etching process, and the semiconductor layer 5 of a partial thickness is removed to form the source electrode 9, the drain electrode 8, and the channel. Area 17;
  • a passivation layer 10 is deposited by a PECVD method on the source electrode 9, the drain electrode 8, and the channel region 17, as shown in FIG.
  • a passivation layer via hole 11 is formed in the passivation layer 10 at a position directly above the gate line 15 and the drain electrode 8 by a patterning process using a normal mask, as shown in FIG.
  • a transparent conductive film is deposited by magnetron sputtering or thermal evaporation.
  • the transparent conductive film can be made of ITO (Indium Tin Oxides) or IZO (Indium Zinc).
  • Oxide, indium oxide) single layer film can also be used as ITO and IZO composite film;
  • the pixel electrode 12 is formed in the pixel region by a patterning process using a common mask, and the pixel electrode 12 is connected to the drain electrode 8 through the passivation layer via 11 as shown in FIG.
  • the method for fabricating the array substrate of the second embodiment is only one manufacturing method for preparing the structure array substrate according to the first embodiment of the present invention, and the third embodiment can also increase or decrease the third embodiment.
  • An embodiment of the present invention further provides a display device comprising the array substrate of the first embodiment; the display device has high light transmittance and high resolution due to an increase in pixel aperture ratio, and is reduced by The backlight module consumes energy, saves costs, and improves display quality.
  • An example of the display device is a liquid crystal display device in which the array substrate and the counter substrate are opposed to each other to form a liquid crystal cell, and the liquid crystal cell is filled with a liquid crystal material.
  • the opposite substrate is, for example, a color filter substrate.
  • the pixel electrode of each pixel unit of the above array substrate is used to apply an electric field to control the degree of rotation of the liquid crystal material to perform a display operation.
  • the liquid crystal display further includes a backlight that provides backlighting for the array substrate.
  • Another example of the display device is an organic electroluminescence display device in which the above array substrate performs a display operation.
  • the display device can be applied to any product having a display function such as a television, an electronic paper, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • a filling layer is first formed between the gate electrode and the drain electrode and the source electrode, and the filling layer increases the distance between the gate electrode and the drain electrode and the source electrode, thereby reducing the gate.
  • the aperture ratio without increasing the trip voltage, does not cause image defects such as image flicker or afterimages; therefore, the present invention improves light transmittance and resolution, and saves cost by reducing backlight module energy consumption, and at the same time
  • the display quality of the display device to which the array substrate is applied is improved.

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Abstract

一种阵列基板、阵列基板的制造方法以及显示装置，该阵列基板包括：基板（1）；多条数据线（16），形成在基板上且沿第一方向延伸；多条栅线（15），与数据线（16）交叉地形成在基板（1）上，且沿垂直于第一方向的第二方向延伸；多个像素区域，由彼此交叉的多条栅线（15）和多条数据线（16）定义且布置成矩阵，其中每个像素区域中设置有薄膜晶体管以及像素电极（12），其中，薄膜晶体管包括：栅电极（2），与多条栅线（15）之一连接；栅绝缘层（3），设置在栅线（15）和栅电极（2）上方；有源层（5），形成在栅绝缘层（3）上且对应于栅电极（2）设置；漏电极（8）和源电极（9），在有源层（5）上方相对设置且二者之间具有薄膜晶体管的沟道区域；填充层（4），设置在栅电极（2）及与栅电极（2）连接的栅线（15）与漏电极（8）和源电极（9）之间；钝化层（10），设置在源电极（9）、漏电极（8）及有源层（5）上，其中在与栅线（15）正对的位置，钝化层（10）设有使漏电极（8）与像素电极（12）连接的钝化层过孔（11）。

Description

阵列基板、 阵列基板的制造方法以及显示装置 技术领域
本发明的实施例涉及一种阵列基板、阵列基板的制造方法以及显示装置。 背景技术
液晶显示器（Liquid Crystal Display, LCD ) 由于具有画面稳定、 图像逼 真、 低辐射、 节省空间以及节省能耗等优点， 现已占据了平面显示领域的主 导地位。 TFT-LCD ( Thin Film Transistor- Liquid Crystal Display, 薄膜晶体管 液晶显示器）是目前主流的液晶显示器。
液晶显示器的一个 4艮重要的参数是光透过率， 而决定光透过率最重要的 因素是开口率。 开口率筒单的来说就是能透过光线的有效区域占总区域的比 例。 液晶面板包括阵列基板和彩膜基板， 其中， 阵列基板的平面示意图如图 1中所示， 其上设有栅线 15，， 垂直于栅线 15，设有数据线 16，， 栅线 15，和数 据线 16，交叉限定有像素区域， 像素区域内设有薄膜晶体管和像素电极 12，， 薄膜晶体管的栅电极 2，与栅线 15，连接、 源电极 9，与数据线 16，连接、 漏电极 8，通过钝化层过孔 11，与像素电极 12，连接。 当光线经由背光板发射出来时， 并不是所有的光线都能穿过面板， 例如驱动芯片、 信号走线、 薄膜晶体管以 及储存电容等所在区域除了可能不完全透光外， 也可能经过这些地方的光线 并不受到液晶层的作用， 而无法显示正确的灰阶， 所以都需利用 BM ( Black Matrix, 黑矩阵）加以遮蔽， 以免干扰到其它透光区域的正确亮度， 因此示 例性地， 有效的透光区域， 就只剩下图 1中的 A区域， 有效的透光区域与全 部区域的比例就称之为开口率。 只要提高开口率， 便可以增加光透过率以及 分辨率， 而同时背光板的亮度也不用特别的高， 可以节省耗电及成本。
现有技术中， 为了增加开口率， 在不断针对影响开口率的各个因素进行 优化。 但是， 现有技术中钝化层过孔通常不设置在栅线区域之上， 栅线和源 电极以及像素电极之间形成的电容 Cgs的大小为 30fF-100fF, 因此跳变电压 AVP在 0.5V-1.0V之间； 如果将钝化层过孔设置在栅线区域之上， 则可以在 很大程度上增加有效透光区域， 从而增大像素的开口率； 但是， 如果直接将 钝化层过孔设置在栅线之上，栅线和源电极以及像素电极之间形成的电容 cgs 的大小变为 200 fF-500fF, 则跳变电压 AVp则在 2.5V-7.0V之间， 由于跳变电 压过大， 因此会引起图像闪烁或者残像等产品不良。 发明内容
本发明的实施例提供一种钝化层过孔设置在栅线区域之上的阵列基板， 用以增加有效透光区域， 进而增大像素开口率、 提高光透过率、 增加分辨率 以及加强显示品质， 进一步地， 本发明的实施例还提供了该阵列基板的制造 方法以及应用该阵列基板的显示装置。
根据本发明实施例的阵列基板包括： 基板； 多条数据线， 形成在所述基 板上且沿第一方向延伸； 多条栅线，与所述数据线交叉地形成在所述基板上， 且沿垂直于第一方向的第二方向延伸； 多个像素区域， 由彼此交叉的所述多 条栅线和所述多条数据线定义且布置成矩阵， 其中每个所述像素区域中设置 有薄膜晶体管以及像素电极， 其中， 所述薄膜晶体管包括： 栅电极， 与所述 多条栅线之一连接； 栅绝缘层， 设置在所述栅线和栅电极上方； 有源层， 形 成在所述栅绝缘层上且对应于所述栅电极设置； 漏电极和源电极， 在有源层 上方相对设置且二者之间具有所述薄膜晶体管的沟道区域； 填充层， 设置在 所述栅电极及与所述栅电极连接的所述栅线与漏电极和源电极之间；钝化层， 设置在所述源电极、 所述漏电极及所述有源层上， 其中在与所述栅线正对的 位置， 所述钝化层开设有使所述漏电极与所述像素电极连接的钝化层过孔。
备选地， 所述填充层的厚度为 5000A-25000A。
备选地， 所述填充层为电介质材料。
备选地， 所述填充层由感光树脂发生固化反应形成。
备选地， 所述沟道区域呈 U型， 所述 U型的开口背向所述数据线。
备选地， 所述栅线的宽度与所述沟道区域宽度相同。
本发明的实施例还提供了一种制备上述阵列基板的方法：
一种阵列基板制造方法， 包括： S1. 准备基板； S2. 在所述基板上形成 栅线、 栅电极； S3. 在所述栅线以及所述栅电极上形成覆盖整个基板的栅绝 缘层； S4. 在所述栅绝缘层上形成填充层， 所述填充层形成在所述栅电极及 与所述栅线相连的栅线与之后形成的漏电极和源电极之间； S5. 在形成有所 述栅绝缘层和所述填充层的所述基板上形成有源层、漏电极和源电极； S6. 在 所述源电极、 所述漏电极及所述有源层上形成钝化层， 其中所述钝化层在所 述栅线和所述漏电极正上方的位置处开设有钝化层过孔； S7. 在所述钝化层 上形成通过所述钝化层过孔与所述漏电极连接的像素电极。
备选地， 所述步骤 S4包括：
5401. 在所述栅绝缘层上涂覆一层感光树脂；
5402. 通过双色调掩模板曝光， 形成对应所述填充层的感光树脂完全保 留区域、 对应所述沟道区域的感光树脂半保留区域以及对应栅电极接线区域 的感光树脂完全去除区域；
S403. 显影处理后， 通过刻蚀工艺去除感光树脂完全去除区域的栅绝缘 层；
S404. 通过灰化工艺去除感光树脂半保留区域的感光树脂， 暴露出栅绝 缘层。
备选地， 所述步骤 S5包括：
S501. 在所述在栅绝缘层以及所述填充层上沉积半导体层、 掺杂半导体 层以及源 -漏金属层；
5502. 在所述与源-漏金属层上涂覆一层光刻胶；
5503. 通过双色调掩模板曝光， 形成对应所述源电极以及漏电极区域的 光刻胶完全保留区域、 对应所述沟道区域的光刻胶半保留区域以及对应上述 区域之外区域的光刻胶完全去除区域；
5504. 显影处理后， 通过第一次刻蚀工艺去除光刻胶完全去除区域的源- 漏金属层、 掺杂半导体层以及半导体层；
5505. 通过灰化工艺去除光刻胶半保留区域的光刻胶；
5506. 通过第二次刻蚀工艺去除光刻胶半保留区域的源-漏金属层以及 掺杂半导体层， 并去除部分厚度的半导体层；
5507. 剥离剩余的光刻胶。
本发明的实施例还提供了一种包括上述任意一种阵列基板的显示装置。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1是现有技术中一种阵列基板的平面示意图；
图 2是根据本发明实施例的一种阵列基板的平面示意图；
图 3是沿 A-A'线剖取的图 2中阵列基板的截面图；
图 4是根据本发明实施例的阵列基板的制造方法在基板上形成栅电极以 及栅绝缘层后的剖面示意图；
图 5是在图 4的基板上涂覆感光树脂层后的剖面示意图；
图 6是对图 5的基板进行显影处理后感光树脂半保留区域的剖面示意图； 图 7是对图 5的基板进行显影处理后感光树脂完全去除区域的剖面示意 图；
图 8是在图 7的基板上进行刻蚀工艺后的剖面示意图；
图 9是对图 6的基板进行灰化工艺后的剖面示意图；
图 10是在图 9的基板上依次沉积有源层以及源-漏金属层后的剖面示意 图；
图 11是在图 10的基板上形成有源层、 源电极、 漏电极以及有源层的沟 道区域后的剖面示意图；
图 12是在图 11的基板上形成钝化层后的剖面示意图；
图 13是在图 12的基板上开设钝化层过孔后的剖面示意图；
图 14是在图 13的基板上形成像素电极后的剖面示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
需要说明的是： 本发明的 "上" "下" "内" "外" 只是参考附图对本 发明的实施例进行说明， 不作为限定用语。
实施例一 图 2示出了根据本发明实施例一的阵列基板的平面示意图， 其中示出了 一个像素单元的结构， 图 3是沿 A-A，线剖取的图 1中的阵列基板的截面图。 如图 2和图 3所示， 该阵列基板包括： 基板 1 ; 多条数据线 16, 形成在基板 1上且沿第一方向延伸； 多条栅线 15, 与数据线 16交叉地形成在所述基板 1 上， 且沿垂直于第一方向的第二方向延伸； 多个像素区域， 由彼此交叉的多 个栅线 15和多条数据线 16定义且布置成矩阵， 在多个像素区域的每个中形 成有薄膜晶体管以及像素电极 12,栅线 15用于向薄膜晶体管提供开启信号， 数据线 16用于向像素电极 12提供数据信号。 而且， 薄膜晶体管包括： 形成 在基板 1上并与栅线 15连接的栅电极 2; 形成在栅线 15以及栅电极 2上并 覆盖整个基板的栅绝缘层 3;形成在栅绝缘层 3上的有源层 5 ,形成在有源层 上方的漏电极 8以及与漏电极 8相对并与数据线 16连接的源电极 9,源电极 9与漏电极 8通过有源层的沟道区域 17实现可控制的电连接；形成在源电极 9、 漏电极 8及沟道区域 17上的钝化层 10, 其中在栅电极与漏电极和源电极 之间形成有填充层 4。
在本实施例中， 以在栅绝缘层 3与有源层 5之间形成填充层为例进行说 明，由于填充层 4增大了栅线 15与漏电极 8以及源电极 9之间的在阵列基板 的厚度方向， 即， z方向上的距离， 进而减少了栅线 15和源电极 9以及像素 电极 12之间形成的电容。 进一步的， 在钝化层 10位于栅线 15上方的位置， 开设有使漏电极 8与像素电极 12连接的钝化层过孔 11 ; 对比图 1以及图 2, 可以发现，通过将钝化层过孔设置在栅线 15正上方，可以大大增加有效透光 区域， 从而增大了像素的开口率； 增加的有效透光区域如图中 B区域所示； 实际应用中， 以 23.6英寸的全高清（ foil HD, 1920x1080 )分辨率产品为例， 这样可以增大 5%- 10%的开口率。
填充层 4的主要作用是增大栅绝缘层 3与漏电极 8以及源电极 9之间的 距离， 进而减小栅线 15与源电极 9以及像素电极 12之间形成的电容， 因此 填充层 4的示例材料为电介质材料， 这样不会由于加入填充层 4而影响降低 电容的效果； 本实施例中的填充层 4由感光树脂发生固化反应形成， 这样除 了不影响降低电容的效果之外， 还降低了填充层 4的形成难度。
填充层 4的厚度如果过大， 则会造成最终产品厚度过大， 填充层 4的厚 度如果过小， 则起不到减小跳变电压的效果。 在本发明的实施例中， 填充层 厚度为 5000A-25000A, 这样既不会造成产品厚度过大， 又能够起到不增大 跳变电压的效果。 进一步地， 填充层厚度为 15000A。
此外， 本发明的实施例还通过改变沟道区域开口的朝向， 进一步的增加 有效透光面积；现有技术中沟道区域呈 U型，该 U型的开口朝向数据线的延 伸方向， 具体如图 1中 17，所示， 而本实施例中沟道区域 17开口背向数据线 16; 这样的话， 相比现有技术， 需要的栅线的宽度会得到减少， 栅线 15宽度 与沟道区域 17宽度相同即可实现正常功能； 栅线 15宽度减小则意味着会增 加相应面积的有效透光区域， 从而增大像素的开口率； 对比图 1以及图 2, 增大的有效透光区域如 C区域所示； 实际应用中，以 23.6英寸的全高清（full HD, 1920x 1080 )分辨率产品为例， 这样可以增大 2%-5%的开口率。
需要说明的是：本发明实施例一的阵列基板采用底栅型的 TFT结构进行 说明示意， 这仅仅是实现本发明实施例的阵列基板的一种 TFT结构， 实际使 用中还可以采用常用的顶栅型 TFT结构或经过变形的已知 TFT结构， 而且 对于常用顶栅型 TFT结构和经过变形的已知 TFT结构， 也同样采用填充层 填充在栅电极与漏电极和源电极之间和 /或沟道区域的 U型开口朝向数据线 的技术方案来提升显示装置的开口率， 这些都与底栅型 TFT结构的相同， 因 此在此不做赘述。
实施例二
本发明的实施例二还提供了一种制备上述阵列基板的方法， 主要包括在 基板上形成栅线、 栅电极并在栅线以及栅电极上形成覆盖整个基板的栅绝缘 层； 在栅绝缘层上形成有源层、 漏电极和源电极； 在栅电极与漏电极和源电 极之间形成填充层； 在源电极、 漏电极及沟道区域上形成钝化层； 在钝化层 位于栅线以及漏电极正上方的位置开设钝化层过孔； 形成通过钝化层过孔与 漏电极连接的像素电极。 本实施例中以在栅电极与漏电极和源电极之间形成 填充层为例进行说明。
根据本发明实施例的一种阵列基板的制造方法， 主要包括以下步骤： S1. 清洁基板 1后， 在基板 1上形成栅线 15、 栅电极 2并在栅线 15以 及栅电极 2上形成覆盖整个基板的栅绝缘层 3; 该步骤主要包括：
S101. 在基板 1上形成栅线 15以及栅电极 2: 采用磁控溅射或热蒸发的 方法在基板 1 (如玻璃基板 1或石英基板 1 )上沉积一层栅金属薄膜； 栅金属 薄膜可以使用 Cr、 W、 Ti、 Ta、 Mo、 Al、 Cu等金属及其合金， 也可以使用 由多层金属薄膜组成的复合薄膜； 然后采用普通掩模板， 通过构图工艺对栅 金属薄膜进行刻蚀， 在基板 1上形成栅线 15以及薄膜晶体管的栅电极 2;
S102. 在栅线 15以及栅电极 2上形成覆盖整个基板的栅绝缘层 3 , 栅绝 缘层 3的厚度为 3000A-5000A,如图 4中所示，栅绝缘层 3可以采用氧化物、 氮化物或氧氮化合物等。
52. 在栅绝缘层 3上形成填充层 4, 本实施例中以感光树脂形成填充层 为例进行说明。 该步骤主要包括：
5201. 在栅绝缘层 3 上涂覆一层感光树脂， 感光树脂层的厚度为 5000A-25000A, 如图 5所示；
5202. 通过双色调掩模板曝光， 形成对应填充层 4的感光树脂完全保留 区域、对应沟道区域 17的感光树脂半保留区域以及对应栅电极接线区域的感 光树脂完全去除区域；
5203. 显影处理后， 感光树脂完全保留区域的感光树脂厚度没有变化； 光刻胶完全去除区域的感光树脂被完全去除， 如图 7中所示； 感光树脂半保 留区域的感光树脂厚度变薄， 如图 6中所示； 然后通过刻蚀工艺去除感光树 脂完全去除区域的栅绝缘层 3 , 暴露出栅电极 15, 形成栅电极接线区域， 如 图 8中所示； 这样可以使得栅电极和沟道区域之间的距离不变， 防止栅电极 的驱动电压增大；
S204. 通过灰化工艺去除感光树脂半保留区域的感光树脂， 暴露出栅绝 缘层 3 , 如图 9中所示。
53. 在栅绝缘层 3以及填充层 4上形成有源层、 源电极 9、 漏电极 8, 其 中有源层的位于源电极 9和漏电极 8之间的部分形成沟道区域， 本实施例中 的有源层包括半导体层 5以及掺杂半导体层 6; 该步骤主要包括：
S301. 采用 PECVD ( Plasma Enhanced Chemical Vapor Deposition, 等离 子体增强化学气相沉积法 )方法在栅绝缘层 3以及填充层 4上依次沉积半导 体层 5以及掺杂半导体层 6; 然后采用磁控溅射或热蒸发方法沉积源-漏金属 层 7; 具体如图 10中所示； 源-漏金属层 7可以采用 Cr、 W、 Ti、 Ta、 Mo、 Al、 Cu等金属或合金， 也可以采用由多层金属复合构成；
S302. 在与源-漏金属层 7上涂覆一层光刻胶； 5303. 通过双色调掩模板曝光， 形成对应源电极 9以及漏电极 8区域的 光刻胶完全保留区域、对应沟道区域 17的光刻胶半保留区域以及对应上述区 域之外区域的光刻胶完全去除区域；
5304. 显影处理后， 光刻胶完全保留区域的光刻胶厚度没有变化， 光刻 胶完全去除区域的光刻胶被完全去除，光刻胶半保留区域的光刻胶厚度变薄； 然后通过第一次刻蚀工艺去除光刻胶完全去除区域的源-漏金属层 7、 掺杂半 导体层 6以及半导体层 5, 形成有源层图形；
5305. 通过灰化工艺去除光刻胶半保留区域的光刻胶， 暴露出该区域的 源-漏金属层 7;
S306. 通过第二次刻蚀工艺去除光刻胶半保留区域的源-漏金属层 7以及 掺杂半导体层 6, 并去除部分厚度的半导体层 5, 形成源电极 9、 漏电极 8以 及沟道区域 17;
S307. 剥离剩余的光刻胶； 此时具体结构如图 11中所示。
54. 在源电极 9、 漏电极 8及沟道区域 17上采用 PECVD 方法沉积形成 钝化层 10, 如图 12中所示。
55. 采用普通掩模板通过构图工艺在钝化层 10位于栅线 15以及漏电极 8正上方的位置开设钝化层过孔 11 , 如图 13中所示。
56. 形成通过钝化层过孔 11与漏电极 8连接的像素电极 12:
5601. 采用磁控溅射或热蒸发的方法， 沉积一层透明导电薄膜， 透明导 电薄膜可以采用 ITO ( Indium Tin Oxides, 铟锡氧化物）或 IZO ( Indium Zinc
Oxide, 铟辞氧化物）单层膜， 也可以采用为 ITO和 IZO复合膜；
5602. 采用普通掩模板通过构图工艺在像素区域形成像素电极 12, 像素 电极 12通过钝化层过孔 11与漏电极 8连接， 如图 14中所示。
需要说明的是： 实施例二的阵列基板制造方法仅仅是制备本发明实施例 一中所述结构阵列基板的一种制造方法， 实际使用中还可以通过增加或减少 实施例三
本发明的实施例还提供了一种显示装置，包括实施例一所述的阵列基板； 由于其像素开口率增大， 因此该显示装置具有高的光透过率以及高分辨率， 并且由于减少了背光模组能耗， 节省了成本， 同时提升了显示品质。 该显示装置的一个示例为液晶显示装置， 其中， 上述阵列基板与对置基 板彼此对置以形成液晶盒， 在液晶盒中填充有液晶材料。 该对置基板例如为 彩膜基板。 上述阵列基板的每个像素单元的像素电极用于施加电场对液晶材 料的旋转的程度进行控制从而进行显示操作。 在一些示例中， 该液晶显示器 还包括为阵列基板提供背光的背光源。
该显示装置的另一个示例为有机电致发光显示装置， 其中， 上述阵列基 进行显示操作。
示例性地， 根据本发明实施例的显示装置可以应用到电视、 电子纸、 数 码相框、 手机、 平板电脑等任何具有显示功能的产品。
根据本发明实施例的该阵列基板， 首先在栅电极与漏电极和源电极之间 形成有填充层， 由于填充层增大了栅电极与漏电极以及源电极之间的距离， 进而减少了栅线和源电极以及像素电极之间形成的电容； 进一步的， 本发明 的阵列基板的钝化层过孔设置在栅线区域之上， 这样不但增加了有效透光区 域， 从而增大了像素的开口率， 而且没有增加跳变电压， 不会引起图像闪烁 或者残像等产品不良； 因此， 本发明提高了光透过率以及分辨率， 并且由于 减少了背光模组能耗， 节省了成本， 同时提升了应用该阵列基板的显示装置 的显示品质。
以上实施方式仅用于说明本发明， 而并非对本发明的限制， 有关技术领 域的普通技术人员， 在不脱离本发明的精神和范围的情况下， 还可以做出各 种变化和变型， 因此所有等同的技术方案也属于本发明的保护范畴。

Claims

权利要求书
1、 一种阵列基板， 包括：
基板；
多条数据线， 形成在所述基板上且沿第一方向延伸；
多条栅线， 与所述数据线交叉地形成在所述基板上， 且沿垂直于第一方 向的第二方向延伸；
多个像素区域， 由彼此交叉的所述多条栅线和所述多条数据线定义且布 置成矩阵， 其中每个所述像素区域中设置有薄膜晶体管以及像素电极，
其中， 所述薄膜晶体管包括：
栅电极， 与所述多条栅线之一连接；
栅绝缘层， 设置在所述栅线和栅电极上方；
有源层， 形成在所述栅绝缘层上且对应于所述栅电极设置； 漏电极和源电极， 在有源层上方相对设置且二者之间具有所述薄膜 晶体管的沟道区域；
填充层， 设置在所述栅电极及与所述栅电极连接的所述栅线与漏电 极和源电极之间；
钝化层， 设置在所述源电极、 所述漏电极及所述有源层上， 其中在 与所述栅线正对的位置， 所述钝化层开设有使所述漏电极与所述像素电极连 接的钝化层过孔。
2、 根据权利要求 1 所述的阵列基板， 其中所述填充层的厚度为 5000Λ-25000Λ。
3、根据权利要求 1所述的阵列基板,其中所述填充层由电介质材料形成。
4、根据权利要求 3所述的阵列基板，其中所述填充层由感光树脂发生固 化反应形成。
5、根据权利要求 1-4任意一项所述的阵列基板， 其中所述沟道区域呈 U 型， 所述 U型的开口背向所述数据线。
6、根据权利要求 5所述的阵列基板，其中所述栅线的宽度与所述沟道区 域宽度相同。
7、根据权利要求 2所述的阵列基板，其中所述填充层的厚度为 15000Α。 8、根据权利要求 1所述的阵列基板，其中所述有源层包括半导体层和掺 杂半导体层。
9、根据权利要求 8所述的阵列基板，其中所述沟道区域仅由所述半导体 层构成。
10、 一种阵列基板的制造方法， 包括：
51. 准备基板；
52. 在所述基板上形成栅线、 栅电极；
53. 在所述栅线以及所述栅电极上形成覆盖整个基板的栅绝缘层；
54. 在所述栅绝缘层上形成填充层， 所述填充层形成在所述栅电极及与 所述栅线相连的栅线与之后形成的漏电极和源电极之间；
55. 在形成有所述栅绝缘层和所述填充层的所述基板上形成有源层、 漏 电极和源电极；
56. 在所述源电极、 所述漏电极及所述有源层上形成钝化层， 其中所述 钝化层在所述栅线和所述漏电极正上方的位置处开设有钝化层过孔；
S7. 在所述钝化层上形成通过所述钝化层过孔与所述漏电极连接的像素 电极。
11、 根据权利要求 10所述的阵列基板的制造方法， 其中所述步骤 S4包 括：
S401. 在所述栅绝缘层上涂覆一层感光树脂；
S402. 通过双色调掩模板曝光， 形成对应所述填充层的感光树脂完全保 留区域、 对应所述沟道区域的感光树脂半保留区域以及对应栅电极接线区域 的感光树脂完全去除区域；
S403. 显影处理后， 通过刻蚀工艺去除感光树脂完全去除区域的栅绝缘 层；
S404. 通过灰化工艺去除感光树脂半保留区域的感光树脂， 暴露出栅绝 缘层。
12、 根据权利要求 10所述的阵列基板的制造方法， 其中所述步骤 S5包 括：
S501. 在所述在栅绝缘层以及所述填充层上沉积半导体层、 掺杂半导体 层以及源 -漏金属层；
5502. 在所述与源-漏金属层上涂覆一层光刻胶；
5503. 通过双色调掩模板曝光， 形成对应所述源电极以及漏电极区域的 光刻胶完全保留区域、 对应所述沟道区域的光刻胶半保留区域以及对应上述 区域之外区域的光刻胶完全去除区域；
5504. 显影处理后， 通过第一次刻蚀工艺去除光刻胶完全去除区域的源- 漏金属层、 掺杂半导体层以及半导体层；
5505. 通过灰化工艺去除光刻胶半保留区域的光刻胶；
5506. 通过第二次刻蚀工艺去除光刻胶半保留区域的源-漏金属层以及 掺杂半导体层， 并去除部分厚度的半导体层；
5507. 剥离剩余的光刻胶。
13、 根据权利要求 10所述的阵列基板的制造方法， 其中所述步骤 S7包 括：
5701. 沉积一层透明导电薄膜， 所述透明导电薄膜采用铟锡氧化物或铟 辞氧化物单层膜， 或者 ITO和 IZO复合膜；
5702. 采用普通掩模板通过构图工艺在像素区域中形成像素电极， 像素 电极通过所述钝化层过孔与漏电极电连接。
14、 一种显示装置， 包括： 权利要求 1-9任意一项所述的阵列基板。
PCT/CN2013/086368 2013-03-25 2013-10-31 阵列基板、阵列基板的制造方法以及显示装置 WO2014153958A1 (zh)

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