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WO2020058194A1 - Dispositif d'exposition destiné à un procédé de photolithographie, module doté d'un dispositif d'exposition et procédé d'exposition d'un substrat revêtu d'une photorésine - Google Patents

Dispositif d'exposition destiné à un procédé de photolithographie, module doté d'un dispositif d'exposition et procédé d'exposition d'un substrat revêtu d'une photorésine Download PDF

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Publication number
WO2020058194A1
WO2020058194A1 PCT/EP2019/074711 EP2019074711W WO2020058194A1 WO 2020058194 A1 WO2020058194 A1 WO 2020058194A1 EP 2019074711 W EP2019074711 W EP 2019074711W WO 2020058194 A1 WO2020058194 A1 WO 2020058194A1
Authority
WO
WIPO (PCT)
Prior art keywords
focusing
exposure device
exposure
substrate
chuck
Prior art date
Application number
PCT/EP2019/074711
Other languages
German (de)
English (en)
Inventor
Uwe Vogler
Original Assignee
Suss Microtec Lithography Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suss Microtec Lithography Gmbh filed Critical Suss Microtec Lithography Gmbh
Publication of WO2020058194A1 publication Critical patent/WO2020058194A1/fr

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/7005Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70158Diffractive optical elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • Exposure device for a photolithography process assembly with an exposure device and method for exposing a substrate coated with a photoresist
  • the invention relates to an exposure device for a photolithography process and an assembly with a substrate and such an exposure device.
  • the invention further relates to a method for exposing a substrate coated with a photoresist.
  • Devices for treating a disk-shaped substrate are known from the prior art, which are used in connection with photolithography processes.
  • a photolithography process micro-structured components can be produced, for example integrated circuits, semiconductor chips or micro-electromechanical systems (MEMS).
  • MEMS micro-electromechanical systems
  • a photomask is first loaded into the exposure device.
  • a substrate coated with a photoresist (“resist”) for example a wafer, is inserted into the device and then exposed through the photomask. Due to the exposure, the chemical properties of the photoresist applied to the substrate change partially, i.e. the photoresist is developed at these points.
  • the photoresist can then be removed in areas defined by the photomask.
  • the treated substrate can then be processed further.
  • the object of the invention is to provide an exposure device for a photolithography process which can be used flexibly and can also write over a large area of a substrate in a short time.
  • Another object of the invention is to provide a method for exposing a substrate coated with a photoresist, by means of which essentially any desired pattern can be written on a substrate in a short time.
  • an exposure device for a photolithography process with an exposure device, a focusing device system and a chuck.
  • the focusing device system is arranged between the exposure device and the chuck, essentially parallel to the chuck, and has at least two focusing elements, each with a focal point.
  • the exposure device is set up such that all exposure elements of the focusing device system are always illuminated by the exposure device during exposure.
  • the focal points of the focusing elements are each intended for writing on the substrate using the “direct write” method.
  • the focal points of the focusing elements on the image side each lie on the side of the focusing device system facing away from the exposure device and are spaced from the chuck, so that focal points or images arise in the focal points that can be used to expose the photoresist on the substrate.
  • writing can be carried out simultaneously at different points in the direct write method.
  • the focal points provided for writing can be moved together via the focusing device system, so that all focal points write in parallel.
  • the photoresist can be exposed at different locations at the same time, which increases the writing speed compared to devices in proportion to the number of focusing elements that only have a single focal point for writing in the direct write process.
  • the flexibility of the direct write process is retained, so that the pattern to be written can be adapted at any time without the need for design changes or fundamental process changes.
  • a deviation of up to ⁇ 2.5 gm from parallelism counts as “essentially parallel”, where ⁇ 2.5 gm is the maximum change in distance between the focusing device system and the chuck if these are arranged essentially in parallel.
  • “During exposure” means times at which a substrate on the chuck, more precisely the photoresist on the substrate, is illuminated with light from the exposure device.
  • the focusing device system is designed as a lens mask or comprises a lens mask.
  • the lens mask is plate-shaped, as a result of which the focusing elements are arranged in a flat array.
  • the exposure device can be designed such that the exposure device has no component that can specifically block a light beam from the exposure device to individual focusing elements, such as an arrangement of movable mirrors, a pixel panel or the like.
  • the lens mask is in particular not a photo mask, that is, it is not a projection template or is not used as such.
  • the lens mask does not shield defined areas in order to depict a pattern, as is the case with the conventional photolithography methods with photomasks, but rather bundles light into a plurality of light beams, with each of which it is possible to write simultaneously.
  • the focusing elements cannot be designed to be switchable independently of one another, so that either all focusing elements always provide a light point for writing or not.
  • the exposure device has at least two exposure channels, each of the at least two focusing elements being assigned to a separate exposure channel.
  • the exposure device is a light source.
  • the exposure device can have at least two separate light sources, each light source being assigned to one of the exposure channels.
  • the exposure device can comprise only a single light source, the light of which is divided by optical elements over the at least two exposure channels.
  • each exposure channel can be assigned a spatial modulation element, in particular a micromirror array, an LCD, a grating light valve (GLV) or an optical valve, which is illuminated by the exposure device, the respective focusing element of the exposure channel imaging at least part of the respective one spatial modulation element generated.
  • a spatial modulation element in particular a micromirror array, an LCD, a grating light valve (GLV) or an optical valve, which is illuminated by the exposure device, the respective focusing element of the exposure channel imaging at least part of the respective one spatial modulation element generated.
  • GLV grating light valve
  • This type of direct write method does not require movement of one of the elements of the exposure device.
  • the exposure device can have at least two write heads, each write head being assigned to an exposure channel and comprising the respective focusing element and the respective spatial modulation element of the exposure channel.
  • the exposure device is particularly suitable for the production of integrated circuits, since it is common here to reproduce the same structures multiple times on a substrate.
  • the focusing elements can be formed from structured and / or coated material, in particular glass.
  • the exposure device has an illumination optical system which is arranged between the exposure device and the focusing device system.
  • the illumination optics can be designed in such a way that the light of the exposure device strikes the focusing elements over the entire surface, collimated and / or with homogeneous intensity.
  • the light beam formed by each focusing element has essentially the same properties, so that in all Focal points of the focusing device system provided for writing can be developed in the same way, ie the writing can be done directly.
  • the exposure device preferably comprises an adjustment device which is designed to move the focusing device system relative to the chuck, in particular to shift and / or tilt it, to move the chuck relative to the focusing device system, in particular to move and / or tilt it, and / or To move the exposure device relative to the focusing device system, in particular to shift and / or tilt it.
  • an adjustment device which is designed to move the focusing device system relative to the chuck, in particular to shift and / or tilt it, to move the chuck relative to the focusing device system, in particular to move and / or tilt it, and / or To move the exposure device relative to the focusing device system, in particular to shift and / or tilt it.
  • the targeted writing of patterns can thus be carried out either by specifically moving focused foci or by a spatial intensity distribution set by a spatial modulation element per focusing element. It is also conceivable to combine both writing variants and to move a spatial intensity distribution in a targeted manner.
  • the focal points are moved by adjusting the illumination angle.
  • the lighting angle can be adjusted by tilting the exposure device.
  • the illumination angle is pivoted, i.e. the orientation of the illumination angle is changed, while the angle of the illumination angle preferably remains constant.
  • the exposure device can be stationary, ie fixed, and illuminate an optical element, for example a more movable deflection mirror.
  • the adjustment of the illumination angle can be realized by tilting the optical element.
  • the tilting of the illumination angle can also be implemented using known methods for changing the illumination angle in mask aligners, as described, for example, in EP 2 253 997 A2.
  • individual light beams which are generated in particular by switchable LED arrays, can be deliberately superimposed in order to vary the angle distribution of the illumination angle.
  • the adjustment device is controlled here by means of a control unit in which the design to be written is stored as a template and which, in particular, controls the writing process fully automatically.
  • the focusing elements of the focusing device system can be formed by Fresnel lenses, microlenses, for example a microlens array (MLA), in particular a monolithic microlens array, axicons and / or diffractive optical elements.
  • MLA microlens array
  • These focusing elements can be a micro lens array (MLA) and / or binary / multi-level diffractive optical elements (DOE).
  • MLA micro lens array
  • DOE binary / multi-level diffractive optical elements
  • the focusing device system can have a plurality of work cells, each with at least one focusing element.
  • the size of the at least one work cell defines the maximum size of the die that can be produced with the work cell.
  • each die is assigned a focusing element, in particular with one focal point in each case, which is provided to describe the die.
  • the exposure device has a holder for a mask, in particular a photomask, the focusing device system, in particular in the form of a lens mask, being arranged in the holder.
  • the exposure device comprises a vapor lamp, in particular a mercury vapor lamp, at least one laser, in particular an excimer laser or diode laser, or an LED array. In this way, the properties of the exposure device can be matched to different requirements.
  • the exposure device can comprise one or more light sources.
  • an assembly with a substrate, in particular a wafer, and an exposure device according to the invention is also provided to achieve the above-mentioned object.
  • the substrate is arranged on the chuck and, in particular, is fixed thereon in a stable position.
  • the number of focusing elements of the focusing device system corresponds to a number of dies provided on the substrate. In particular, each die is assigned a focusing element.
  • the substrate can be a silicon wafer.
  • the substrate is preferably coated with a photoresist.
  • the substrate can have a maximum diameter or a maximum edge length of 10 mm to 500 mm, preferably 100 mm to 200 mm, in particular 150 mm.
  • the distance between the focal points of the farthest focussing elements is at least 50%, in particular at least 75%, particularly preferably at least 90% of the maximum width of the substrate, in particular the maximum width of the useful area of the substrate.
  • the substrate can be covered essentially over its entire usable area, i.e. of the area to be written on can be written simultaneously with the focusing device system.
  • the distance between the focal points of the farthest distant focusing elements is a maximum of 50% of the maximum width of the substrate, in particular the maximum width of the useful area of the substrate.
  • the additional travel path of the focusing device system in particular a focusing device system designed as a lens mask, is a maximum of 50% of the maximum width of the substrate, in particular a maximum of half the maximum width of the useful surface of the substrate.
  • the additional travel path is the distance by which the focal points must be moved relative to the substrate in addition to the distance that is sufficient to completely describe one die in each case.
  • a method for exposing a substrate coated with a photoresist, in particular for producing integrated circuits is also provided for the solution of the above-mentioned task, with the following steps: Focusing device system, in particular in the form of a lens mask, with at least two focusing elements, which is arranged between the exposure device and the chuck, b) placing a substrate coated with photoresist on the chuck, and Illuminating all focusing elements of the focusing device system by means of the exposure device, so that each focusing element generates a focused light spot or a focused image on and / or in the photoresist.
  • the method can also have the further method step: d) moving the chuck, the focusing device system and / or the exposure device in order to scan the areas of the photoresist to be exposed with the light spots or the images.
  • the process is a direct write process, since the design is imaged directly into the photoresist by means of the light points, in particular without using a photomask.
  • the focal points forming the light points can be adjusted synchronously and in the same way, and the locations that are provided for simultaneous writing can be described simultaneously, ie exposed or not exposed.
  • the substrate can be directly written on at several points with a pattern or the design.
  • all focusing elements of the focusing device system are always illuminated simultaneously during the exposure, so that all focusing elements form a focused light spot that can be used for direct writing.
  • each die is assigned a focusing element and a focal point. In this way, the dies can be described simultaneously in an identical manner in the direct write method, as a result of which the time required for this can be significantly reduced in comparison to other direct write methods.
  • the light points are only moved within a die, that is to say the range of motion of a light point is limited to the size of a die, so that a light point is not intended to describe a plurality of dies which are arranged at different locations on the substrate.
  • the range of motion can be limited to 50 mm, preferably to 20 mm, which enables a very precise movement of the light points.
  • the chuck, the focusing device system and / or the exposure device are moved by means of an adjustment device which is designed to move the focusing device system relative to the chuck, in particular to move and / or tilt it, to move the chuck relative to the focusing device system, in particular shift and / or tilt, and / or the exposure device relative to move to the focusing device system, in particular to move and / or tilt.
  • an adjustment device which is designed to move the focusing device system relative to the chuck, in particular to move and / or tilt it, to move the chuck relative to the focusing device system, in particular shift and / or tilt, and / or the exposure device relative to move to the focusing device system, in particular to move and / or tilt.
  • the areas to be exposed are traversed according to a template that is stored in a control unit.
  • the control unit can be used to ensure precise and, in particular, fully automatic writing of the substrate.
  • the template is created based on the pattern or design.
  • the distance between the most distant light points preferably corresponds to at least 50%, in particular at least 75%, particularly preferably at least 90% of the maximum width of the substrate, in particular the maximum width of the useful area of the substrate.
  • the maximum width of the usable area is the distance between the most distant points on the usable area.
  • the usable area of the substrate is the area which is provided for writing on or for producing integrated circuits. In this way, the substrate can essentially be written onto over its entire usable area at the same time.
  • FIG. 1 shows a schematic sectional view of an assembly according to the invention with an exposure device according to the invention which has a lens mask
  • FIG. 2 shows a schematic view of the assembly with the exposure device from FIG. 1,
  • FIG. 3 shows a schematic plan view of the lens mask from FIG. 1 according to a first embodiment
  • - Figure 4 in a schematic plan view of the lens mask of Figure 1 according to a second embodiment
  • - Figure 5 is a schematic view of a portion of an exposure device according to the invention according to another embodiment, with several spatial modulation elements.
  • FIG. 1 shows an assembly 10 with an exposure device 12 and a coated substrate 14, the exposure device 12 being set up to expose the substrate 14 coated with a photoresist.
  • the substrate 14 is a circular wafer and has a usable area 40.
  • any substrate 14 can be exposed using the exposure device 12, in particular wafers that are not circular.
  • the usable area 40 which is shown in broken lines in FIG. 2, comprises a region of the substrate 14 which is formed by a concentric circle with a diameter d which is 95% of the diameter of the substrate 14.
  • the usable area 40 can in principle be an arbitrarily large proportion of an area of the substrate 14.
  • the exposure device 12 can be used in any photolithography process.
  • the exposure device 12 has an exposure device 15, a focusing device system 17 and an illumination optics 20, which is provided to direct the light of the exposure device 15 to the focusing device system 17.
  • the exposure device 15 is a single light source 16 in the embodiments shown in FIGS. 1 and 2.
  • the light source 16 is a mercury vapor lamp here.
  • the light source 16 can be any light source that is suitable for the photolithography method, for example another steam lamp, a laser, in particular an excimer laser or diode laser, or an LED array.
  • the light source 16 can also be formed from a combination of these light sources.
  • the focusing device system 17 is a lens mask 18.
  • the focusing device system In an alternative embodiment, the focusing device system
  • each can be the lens mask below
  • the illumination optics 20 are designed in accordance with the light source 16 and the beam path on which the light is guided from the light source 16 to the lens mask 18.
  • the illumination optics 20 comprise an ellipsoid mirror 22, which bundles the light from the light source 16, and in the direction of the beam path a shutter 24, a collimation lens 26, two lens plates 28, 29, which together form a so-called Köhler integrator, and a front lens 30. Furthermore, two mirrors 32, 33 are arranged in the beam path, each deflecting the light accordingly by 90 °.
  • the light from the light source 16 can be completely blocked by means of the shutter 24, so that no light from the light source 16 falls on the lens mask 18.
  • the shutter 24 is in particular not suitable for blocking light beams to individual parts such as focusing elements of the lens mask 18.
  • the exposure device 12 also has a chuck 34 and a platform 36, the chuck 34 being arranged opposite the front lens 30 on the platform 36 (see FIG. 2)
  • the substrate 14 is attached to the chuck 34.
  • the lens mask 18 is received in a receptacle 38 of the exposure device 12 between the illumination optics 20 and the chuck 34 and is arranged essentially parallel to the useful surface 40 of the substrate 14.
  • the receptacle 38 is preferably a receptacle in which photomasks can also be accommodated for a mask photolithography process.
  • the receptacle 38 can be a drawer-shaped holder in which the lens mask 18 is sucked in by means of a vacuum and thus fixed.
  • the receptacle 38 can also be designed specifically, in particular exclusively, to receive the lens mask 18.
  • the lens mask 18 is, for example, plate-shaped and has a base body 41 and several, in particular identically designed, focusing elements 42, which are arranged next to one another in the form of a grid.
  • the basic body 41 has a plurality of work cells 46.
  • the work cells 46 are square and arranged in rows and columns, in particular directly adjacent to one another. In other words, the work cells 46 are distributed on the base body 41 like a checkerboard.
  • the number of work cells 46 corresponds to the number of focusing elements 42, one focusing element 42 being assigned to one work cell 46.
  • the focusing elements 42 are, for example, micro-lenses each having a focal point 44 which, when the lens mask 18 is installed, lies in the plane of the useful surface 40 or the photoresist applied to the substrate 14.
  • the focusing elements 42 are formed in the base body 41.
  • the focusing elements 42 and the base body 41 can be made together in one piece.
  • FIG. 3 shows a lens mask 18 according to a first embodiment.
  • the lens mask 18 here is a circular disk with nine focusing elements 42, which are arranged in the form of a 3 ⁇ 3 grid centered in the disk.
  • each focusing element 42 has an individual microlens 43 with a focal point 44, which is provided for writing on the photoresist or the substrate 14.
  • FIG. 4 shows a lens mask 18 according to a second embodiment.
  • the focusing elements 42 each have Fresnel lenses 45 instead of microlenses 43, as in the first embodiment.
  • the lens mask 18 of the second embodiment is designed analogously to the first embodiment. The following explanations apply equally to the lens mask 18 in each embodiment, ie regardless of the nature of the focusing elements 42.
  • the focal points 44 of all focusing elements 42 lie in a plane which is arranged parallel to the lens mask 18 (see FIG. 2).
  • the focal points 44 may lie in a plane that is arranged essentially parallel to the lens mask 18, i.e. in a plane that is inclined by up to 2.5 pm to the lens mask 18.
  • the distance between the focal points 44 of the focusing elements 42 arranged at diagonally opposite corners of the lens mask 18 is 90% of the diameter d of the useful surface 40 of the substrate 14.
  • the distance between the focal points 44 of the farthest distant focusing elements 42 can be as large as desired be. It is preferably at least 50%, in particular at least 75%, particularly preferably at least 90% of the maximum width of the substrate 14 or the maximum width of the usable area 40.
  • the distance between the focal points 44 of the farthest focussing elements 42 from one another is preferably not greater than the maximum width of the substrate 14, in particular not greater than the maximum width of the useful surface 40 of the substrate 14, since otherwise not all focal points 44 are used simultaneously to describe the substrate 14 can be used.
  • the focusing elements 42 can be formed by an essentially any type of lens, for example by Fresnel lenses, microlens arrays (MLA), in particular a monolithic microlens array, diffractive optical elements (DOE) or axicons or combinations thereof.
  • MLA microlens arrays
  • DOE diffractive optical elements
  • the focusing elements 42 can be formed from structured and / or coated material, in particular glass.
  • the size of the work cells 46 is selected such that it corresponds to the size of a die 48 that is to be produced from the substrate 14. At the same time, the work cells 46 define the area on the substrate 14 in which a corresponding focus 44 of the associated focusing element 42 can be moved.
  • Each die 48 is thus assigned a focusing element 42 with a focal point 44, which is provided for describing the corresponding work cell 46.
  • the lens mask 18 can be any number of several, i.e. have at least two focusing elements 42. Furthermore, any number of focusing elements 42 can be assigned to a work cell 46 and / or a die 48. Additionally or alternatively, any number of dies 48 can be provided in a work cell 46.
  • a focusing element 42 can have more than one focal point 44, which is provided for writing on.
  • the focusing elements 42 can be arranged side by side in any way. In particular, they can form an arrangement that deviates from a rectangle, for example in order to be able to image the largest possible number of rectangular dies 48 on a circular wafer.
  • the exposure device 12 has an adjustment device 50 with a first adjustment device 52 and a second adjustment device 54.
  • the first adjustment device 52 is coupled to the light source 16 and is set up to shift and / or tilt the light source 16.
  • the second adjustment device 54 is coupled to the chuck 34 via the platform 36 and is set up to shift and / or tilt the chuck 34 with respect to the lens mask 18.
  • the adjustment device 50 can have an adjustment device which is coupled to the lens mask 18 and is set up to shift and / or tilt the lens mask 18 relative to the chuck 34.
  • the focal points 44 are also arranged in a fixed manner relative to one another and are therefore all adjusted synchronously and in the same way relative to the substrate 14 by the adjusting device 50.
  • a control unit 56 is provided, which is connected in a signal-transmitting manner to the light source 16, the shutter 24 and the adjusting device 50.
  • the control unit 56 can be part of the exposure device 12 or separately, e.g. as a computer.
  • control unit 56 a template of the design or pattern is stored, which is to be written onto the dies 48 by means of the photolithography method, the control unit 56 controlling the movement of the focal points 44 and the opening and closing of the shutter 24 after the template.
  • the light from the light source 16 is transmitted to the front lens 30 and refracted there in such a way that the light is collimated and illuminates the entire side 58 of the lens mask 18 facing the front lens 30 with homogeneous intensity.
  • all the focusing elements 42 are also illuminated by the light from the light source 16 and a light point is generated in each focal point 44, by means of which the photoresist on the substrate 14 can be exposed using the direct write method.
  • the shutter 24 is closed, the light from the light source 16 is blocked, so that no light from the light source 16 falls on the lens mask 18 and thus no light spots are formed which develop the photoresist.
  • the assembly 10 or the exposure device 12 is described below with the aid of an integrated circuit which is produced by means of the photolithography method in each case on a die 48 of the substrate 14.
  • the method can be used for any designs or patterns.
  • the lens mask 18 is inserted into the receptacle 38 and a substrate 14 coated with photoresist is attached to the chuck 34. Then the shutter 24 is opened and all focusing elements 42 of the lens mask 18 are illuminated homogeneously by means of the light source 16 via the illumination optics 20. Each focussing element 42 then generates a focussed light spot in its focal point 44, which directly exposes the photoresist at the corresponding point in the respective die 48. The areas of the photoresist to be exposed on the substrate 14 are scanned by means of the stored template by means of the control unit 56 and exposed by means of the light spots formed by the lens mask 18.
  • control unit 56 controls the relative movement of the focal points 44 with respect to the substrate 14 via the adjusting device 50 and moves the structures of the design or pattern to be written according to the template with the focal points 44 coupled to one another via the lens mask 18.
  • the chuck 34 with the substrate 14 is displaced in the X-Y direction with respect to the lens mask 18 by means of the second adjusting device 54. Additionally or alternatively, the chuck 34 can be tilted and / or rotated relative to the lens mask 18, around the focal points 44 relative to the substrate
  • the relative movement of the focal points 44 with respect to the substrate 14 can be generated in that the lens mask 18 is displaced and / or tilted via a corresponding adjustment device.
  • the light source 16 can be displaced and / or tilted via the adjusting device 52, as a result of which the beam path of the light from the light source 16 changes and leads to a corresponding relative movement of the focal points 44 with respect to the substrate 14.
  • Each focal point 44 is assigned to a single die 48 at any point in time, that is to say that each die 48 is only ever described by one focal point 44 at a time.
  • each focal point 44 is arranged at the corresponding location of the die 48 assigned to it, so that all focal points 44 each describe the same location of the die 48.
  • the light from the light source 16 illuminates all focusing elements 42 simultaneously via the illumination optics 20, so that a light point for developing the photoresist is formed in all focal points 44 of the focusing elements 42.
  • the shutter 24 the light from the light source 16 is transmitted or blocked in accordance with the structure to be formed to the lens mask 18, so that light from the light source 16 falls through the focusing elements 42 and light spots are formed for writing or no light from the light source 16 falls through the focusing elements 42 and thus no light points are formed for writing.
  • the design of the integrated circuit is simultaneously imaged in a direct write process in all dies 48 by means of the light point assigned to the corresponding die 48 in the photoresist on the substrate 14.
  • a different template has to be stored in the control unit 56 and selected for the method.
  • the exposure device 12 and in particular the lens mask 18 do not have to be changed for this, i.e. can be used flexibly for different designs.
  • lens masks 18 can also be used for different designs, in particular lens masks 18 can be used according to their optical properties, such as resolution.
  • different lens masks 18 can be used for a design in 1 pm technology and a design in 5 pm technology. In this way, a photolithography method is provided which can be used flexibly and can also reproduce essentially any pattern multiple times over a large area of a substrate 14 in a short time.
  • a design common to all dies 48 can be generated simultaneously in all dies 48 provided on a substrate 14 in the direct write method.
  • the method is many times faster than in conventional direct write methods, in which the dies 48 are written to one another in succession or only ever a part of the dies 48 of a substrate 14.
  • FIG. 5 shows a schematic representation of a section of an exposure device 12 according to the invention in accordance with a further embodiment.
  • the exposure device 12 shown in FIG. 5 differs as follows from the exposure device 12 described in connection with FIGS. 1 to 4.
  • the exposure device 12 has a plurality of spatial modulation elements 60.
  • the spatial modulation elements 60 can comprise micromirror arrays, LCDs, GLVs or optical valves.
  • the spatial modulation elements 60 can each comprise an array of elements which can be switched between a translucent and an opaque state. In this way, transmission patterns with which the substrate 14 is to be exposed can be set in a targeted manner by switching the individual elements of each spatial modulation element 60.
  • Each focusing element 42 in FIG. 5 produces an image of the spatial modulation element 60 or the set transmission pattern on the substrate 14 in the form of an intensity distribution.
  • This intensity distribution can be written into a photoresist that is located on the substrate 14.
  • the spatial modulation element 60 can be controlled by means of the control unit 56 in order to set certain patterns or transmission patterns.
  • the exposure device 12 in FIG. 5 has a plurality of exposure channels 62.
  • a focusing element 42 and a spatial modulation element 60 are assigned to each of these exposure channels 62.
  • the exposure device 12 comprises a plurality of write heads 63, each write head 63 having a focusing element 42 and a spatial modulation element 60 for an exposure channel 62.
  • the write heads 63 can also have further optical elements such as lenses or mirrors.
  • each write head 63 can have its own light source 16 of the exposure device 15 for generating the light for the respective exposure channel 62.
  • the invention is not restricted to the embodiments shown.
  • individual features of an embodiment can be combined with other features as desired, independently of the other features of the corresponding embodiment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Dispositif d'exposition (12) destiné à un procédé de photolithographie, comprenant un dispositif d'exposition (15), un système de dispositif d'ajustement de la focale (17) et un plateau de maintien (34). Le système dispositif d'ajustement de focale (17) est prévu entre le dispositif d'exposition (15) et le plateau de maintien (34), est disposé sensiblement parallèle au plateau de maintien (34) et présente au moins deux éléments d'ajustement de focale (42) avec respectivement un point focal (44). Le dispositif d'exposition (12) est conçu de manière telle que, lors de l'exposition, tous les éléments d'ajustement de focale (42) du système dispositif d'ajustement de focale (17) sont toujours soumis à l'exposition du dispositif d'exposition (15). Est également prévu un module (10) doté d'un substrat (14), notamment d'une tranche, et d'un tel dispositif d'exposition (12). Le substrat (14) est disposé sur le plateau de maintien (34). Le nombre d'éléments d'ajustement de focale (42) du système dispositif d'ajustement de focale (17) correspond à un nombre de puces (48) prévues sur le plateau de maintien (14). L'invention concerne enfin un procédé d'exposition d'un substrat (14) revêtu d'une photorésine.
PCT/EP2019/074711 2018-09-17 2019-09-16 Dispositif d'exposition destiné à un procédé de photolithographie, module doté d'un dispositif d'exposition et procédé d'exposition d'un substrat revêtu d'une photorésine WO2020058194A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2021649 2018-09-17
NL2021649A NL2021649B1 (en) 2018-09-17 2018-09-17 Exposure device for a photolithography method, assembly having an exposure device and method for exposing a substrate coated with a photoresist

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WO2020058194A1 true WO2020058194A1 (fr) 2020-03-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114682910A (zh) * 2022-05-13 2022-07-01 东莞市中麒光电技术有限公司 采用透镜阵列的晶粒焊接装置及焊接方法
CN115453823A (zh) * 2021-06-09 2022-12-09 电子科技大学 无掩模光刻方法和无掩模光刻设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900637A (en) * 1997-05-30 1999-05-04 Massachusetts Institute Of Technology Maskless lithography using a multiplexed array of fresnel zone plates
US20070019070A1 (en) * 2003-08-27 2007-01-25 Koninklijke Philips Electronics N.V. Method of forming optical images, an array of converging elements and an array of light valves for use in this method, apparatus for carrying out this method and a process for manufacturing a device using this method
EP2253997A2 (fr) 2009-05-18 2010-11-24 Süss MicroTec Lithography GmbH Système d'éclairage pour contact micro-lithographique et appareil d'exposition de proximité
US20120140194A1 (en) * 2010-12-01 2012-06-07 Samsung Electronics Co., Ltd. Maskless Exposure Apparatus
US20150097914A1 (en) * 2012-04-20 2015-04-09 Koninklijke Philips N.V. Lighting apparatus for providing light for processing an object

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900637A (en) * 1997-05-30 1999-05-04 Massachusetts Institute Of Technology Maskless lithography using a multiplexed array of fresnel zone plates
US20070019070A1 (en) * 2003-08-27 2007-01-25 Koninklijke Philips Electronics N.V. Method of forming optical images, an array of converging elements and an array of light valves for use in this method, apparatus for carrying out this method and a process for manufacturing a device using this method
EP2253997A2 (fr) 2009-05-18 2010-11-24 Süss MicroTec Lithography GmbH Système d'éclairage pour contact micro-lithographique et appareil d'exposition de proximité
US20120140194A1 (en) * 2010-12-01 2012-06-07 Samsung Electronics Co., Ltd. Maskless Exposure Apparatus
US20150097914A1 (en) * 2012-04-20 2015-04-09 Koninklijke Philips N.V. Lighting apparatus for providing light for processing an object

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115453823A (zh) * 2021-06-09 2022-12-09 电子科技大学 无掩模光刻方法和无掩模光刻设备
CN114682910A (zh) * 2022-05-13 2022-07-01 东莞市中麒光电技术有限公司 采用透镜阵列的晶粒焊接装置及焊接方法

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