WO2014057647A1 - 有機エレクトロルミネッセンス素子及び照明装置 - Google Patents
有機エレクトロルミネッセンス素子及び照明装置 Download PDFInfo
- Publication number
- WO2014057647A1 WO2014057647A1 PCT/JP2013/005947 JP2013005947W WO2014057647A1 WO 2014057647 A1 WO2014057647 A1 WO 2014057647A1 JP 2013005947 W JP2013005947 W JP 2013005947W WO 2014057647 A1 WO2014057647 A1 WO 2014057647A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light extraction
- light
- moisture
- extraction structure
- layer
- Prior art date
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 40
- 238000000605 extraction Methods 0.000 claims abstract description 302
- 239000000758 substrate Substances 0.000 claims abstract description 181
- 239000000463 material Substances 0.000 claims abstract description 72
- 239000010410 layer Substances 0.000 claims description 237
- 229920005989 resin Polymers 0.000 claims description 70
- 239000011347 resin Substances 0.000 claims description 70
- 239000011247 coating layer Substances 0.000 claims description 65
- 230000004888 barrier function Effects 0.000 claims description 51
- 239000003566 sealing material Substances 0.000 claims description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 238000000149 argon plasma sintering Methods 0.000 claims description 20
- 239000011358 absorbing material Substances 0.000 claims description 19
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 8
- 238000007788 roughening Methods 0.000 claims description 6
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000000565 sealant Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 48
- 238000007789 sealing Methods 0.000 description 39
- 238000012545 processing Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 30
- 239000012044 organic layer Substances 0.000 description 24
- 239000011521 glass Substances 0.000 description 22
- 238000000059 patterning Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- -1 IZO Chemical compound 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 239000012945 sealing adhesive Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000002274 desiccant Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 1
- QZTQQBIGSZWRGI-UHFFFAOYSA-N 2-n',7-n'-bis(3-methylphenyl)-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C4(C5=CC=CC=C5C5=CC=CC=C54)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 QZTQQBIGSZWRGI-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- ONKCIMOQGCARHN-UHFFFAOYSA-N 3-methyl-n-[4-[4-(3-methylanilino)phenyl]phenyl]aniline Chemical compound CC1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C)C=CC=3)=CC=2)=C1 ONKCIMOQGCARHN-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UATJOMSPNYCXIX-UHFFFAOYSA-N Trinitrobenzene Chemical compound [O-][N+](=O)C1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1 UATJOMSPNYCXIX-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000004905 tetrazines Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the light extraction efficiency of the organic EL element is generally said to be about 20 to 30% (this value varies somewhat depending on the light emission pattern and the internal layer structure), and this value is not high.
- Factors that cause the light extraction efficiency to be low are the total reflection at the interface with different refractive indices and the material due to the high refractive index and light absorption properties of the material that forms the light generation site and its periphery. This is probably because light absorption occurs and the light cannot effectively propagate to the outside world. This means that light that cannot be used effectively as so-called light emission accounts for 70 to 80% of the total light emission amount, and the expected value for improving the efficiency of the organic EL element by improving the light extraction efficiency is very large.
- the side surface uneven structure has an average pitch of unevenness of more than 0.3 ⁇ m and less than 10 ⁇ m.
- the light extraction structure has a transparent coating layer that is formed of a material having a higher refractive index than the moisture-proof substrate and covers the uneven structure.
- the organic EL element has a concavo-convex structure 11 formed of a material having a refractive index substantially the same as that of the moisture-proof substrate 1 or a refractive index smaller than that of the moisture-proof substrate 1 on the first electrode 2 side of the moisture-proof substrate 1. It has a structure.
- This light extraction structure is configured as a first light extraction structure 10.
- the concavo-convex structure 11 is formed by arranging a plurality of convex portions 13 having substantially the same height for each section of the matrix concavo-convex portion and arranging them in a planar shape. In the concavo-convex structure 11, the area ratio of the convex portions 13 in the unit region in plan view is substantially the same in each region.
- soda glass or non-alkali glass can be used as the material of the moisture-proof substrate 1.
- soda glass can be preferably used.
- soda glass since soda glass is relatively inexpensive, cost reduction can be achieved.
- the first light extraction structure 10 that can function as a base layer is formed between the moisture-proof substrate 1 and the first electrode 2, even if soda glass is used, ITO or the like is used. The influence of alkali diffusion on the first electrode 2 composed of a transparent metal oxide layer or the like can be suppressed.
- the electrode material for the cathode examples include aluminum, silver, magnesium, and the like, and alloys of these with other metals, such as a magnesium-silver mixture, a magnesium-indium mixture, and an aluminum-lithium alloy.
- a metal conductive material, a metal oxide, etc., and a mixture of these and other metals for example, an ultrathin film made of aluminum oxide (here, a thin film of 1 nm or less capable of flowing electrons by tunnel injection)
- a laminated film with a thin film made of aluminum can also be used.
- the light emitting laminate 5 includes at least one light emitting layer 3.
- the light emitting layer 3 is a layer for emitting light by combining holes injected from the anode (first electrode 2) and electrons injected from the cathode (second electrode 4).
- the light emitting layer 3 may have a configuration in which a dopant is doped in a layer medium that constitutes the light emitting layer 3.
- the layer medium may be composed of an electron transporting material or a hole transporting material.
- a stacked structure of a light emitting layer, a green electron transporting light emitting layer, and a red electron transporting light emitting layer may be adopted. Further, four or more light emitting layers 3 may be laminated.
- the light emission may be fluorescence emission or phosphorescence emission, or may be provided with both a fluorescence emission layer and a phosphorescence emission layer.
- the laminated structure of the light emitting laminate 5 is, for example, a single layer structure of the light emitting layer 3, a laminated structure of the hole transport layer, the light emitting layer 3, and the electron transport layer, or the hole transport layer and the light emitting layer 3.
- An appropriate layer structure such as a stacked structure of the above and a stacked structure of the light emitting layer 3 and the electron transport layer can be employed.
- a hole injection layer may be interposed between the anode and the hole transport layer.
- an oxide of a plurality of metals containing any one of the above metals such as indium and tin, indium and zinc, aluminum and gallium, gallium and zinc, titanium and niobium, etc. It may be.
- the hole injection layer made of these materials may be formed by a dry process such as vapor deposition or transfer, or by a wet process such as spin coating, spray coating, die coating, or gravure printing. It may be a film.
- the material for the electron transport layer can be selected from the group of compounds having electron transport properties.
- this type of compound include metal complexes known as electron transporting materials such as Alq 3 and compounds having a heterocyclic ring such as phenanthroline derivatives, pyridine derivatives, tetrazine derivatives, and oxadiazole derivatives.
- any generally known electron transport material can be used.
- BCP, TAZ, BAlq, Alq 3 , OXD7, PBD, or the like can be used as the material for the electron transport layer.
- a desiccant can be provided in the sealing space. Thereby, even if moisture enters the sealed space, the moisture that has entered can be absorbed.
- a filler containing a desiccant can be used. Thereby, even if moisture enters the inside of the element, the penetrated moisture can be absorbed.
- the moisture-proof substrate 1 and the first light extraction structure 10 may be in contact with each other.
- the first light extraction structure 10 includes an uneven structure 11 provided on the surface of the moisture-proof substrate 1 on the first electrode 2 side.
- the concavo-convex structure 11 is formed of a material having a refractive index substantially the same as that of the moisture-proof substrate 1 or a refractive index smaller than that of the moisture-proof substrate 1. As described above, by providing the first light extraction structure 10 having the concavo-convex structure 11, the total reflection loss is reduced to increase the light extraction efficiency, and the viewing angle dependency is suppressed to emit light with a low color difference. Can do.
- the second light extraction structure 20 it is possible to reduce the total reflection loss and increase the light extraction efficiency, and to emit light with a low color difference while further suppressing the viewing angle dependency.
- the color coordinates change depending on the angle with respect to the light emitting surface due to the difference in the emission wavelengths, and the color viewed from the direction perpendicular to the substrate and the oblique direction.
- the difference from the color may not be sufficiently reduced depending on the case.
- the organic EL element including the light emitting layer 3 that emits a plurality of types of light having different emission wavelengths as in this embodiment the chromaticity shift tends to increase.
- the first light extraction structure 10 composed of the concavo-convex structure 11 is formed in a layer shape as a whole. Become.
- the concavo-convex structure 11 is an embodiment that is preferably formed of a material having substantially the same refractive index as the moisture-proof substrate 1. In this case, more light can be extracted by reducing the difference in refractive index.
- the uneven structure 11 is preferably formed of a material having a refractive index equal to or lower than the refractive index of the moisture-proof substrate 1. In this case, total reflection can be suppressed and more light can be extracted.
- the uneven structure 11 is preferably formed of a material having a refractive index smaller than that of the moisture-proof substrate 1.
- the refractive index of the concavo-convex structure 11 may be 0.1 or more smaller than the refractive index of the moisture-proof substrate 1, but is not limited thereto.
- FIG. 2 shows an example of the uneven structure 11.
- 2A shows a state viewed from a direction perpendicular to the surface of the moisture-proof substrate 1
- FIG. 2B shows a state viewed from a direction parallel to the surface of the moisture-proof substrate 1.
- FIG. 2A the section where the convex portion 13 is provided is indicated by hatching.
- Lines L1, L2, and L3 shown in FIG. 2A correspond to the lines L1, L2, and L3 in FIG.
- the concavo-convex structure 11 has a convex portion 13 allocated to a matrix-shaped concavo-convex section 15 formed by arranging a plurality of squares vertically and horizontally like a grid (matrix type). It is arranged and formed. Each uneven section 15 is formed with an equal area.
- One of the convex portion 13 and the concave portion 14 is assigned to one section of the unevenness (one uneven section 15).
- the assignment of the convex portions 13 may be regular or irregular.
- the form of FIG. 2 shows a form in which the convex portions 13 are irregularly assigned. As shown in FIG.
- the concavo-convex structure 11 is formed such that the area ratio of the convex portions 13 in the unit region is substantially the same in each region.
- FIG. 2A a total of 100 concavo-convex sections 15 of 10 vertical and 10 horizontal are illustrated, and such 100 areas can be used as a unit area.
- the area ratio in which the convex portions 13 are formed is substantially equal for each unit region. That is, as shown in FIG. 2A, assuming that 50 convex portions 13 are provided in the unit region, it is about 50 in other regions having the same number of concave and convex sections and the same area.
- the plurality of convex portions 13 constituting the concavo-convex structure 11 may have the same shape.
- the convex portion 13 is provided over the entire concave and convex section 15, and the convex portion 13 having a rectangular shape (rectangular or square) in plan view is shown.
- the planar shape of the convex portion 13 may be another shape.
- it may be circular or polygonal (triangular, pentagonal, hexagonal, octagonal, etc.).
- the uneven structure 11 is preferably formed as a diffractive optical structure.
- the convex part 13 is provided with a certain regularity so that it may become a diffraction structure.
- the diffractive optical structure it is more preferable that the convex portion 13 is formed with periodicity.
- Examples of the material of the transparent coating layer 12 include a resin in which high refractive index nanoparticles such as TiO 2 are dispersed.
- the resin may be an acrylic or epoxy organic resin.
- additives for curing the resin such as a curing agent, a curing accelerator, and a curing initiator may be added to the resin.
- Examples of the material other than the resin include an inorganic film made of SiN and the like, and an inorganic oxide film (SiO 2 and the like).
- the surface coated with the transparent coating layer 12 (the surface on the first electrode 2 side of the transparent coating layer 12) is preferably a flat surface. Thereby, short circuit failure and stacking failure can be suppressed, and the light emitting laminate 5 can be formed more stably.
- a moisture-proof substrate 1 is prepared as shown in FIG. 3A, and a first light extraction is performed on the surface of the moisture-proof substrate 1 as shown in FIG. Structure 10 is formed.
- the moisture-proof substrate 1 may be a substrate in which the second light extraction structure 20 is provided in advance on the surface opposite to the first light extraction structure 10 by roughening or the like.
- the 1st light extraction structure 10 can be formed by laminating
- the concavo-convex structure 11 can be formed by applying a resin and transferring the concavo-convex shape with a mold.
- a vapor deposition method can be used as a method of laminating each layer of the light emitting laminate 5 (first electrode 2, light emitting layer 3, charge transfer layer 7 and second electrode 4).
- a thin film can be efficiently laminated by vapor deposition. Further, some of these layers may be formed by coating or sputtering. Manufacturability can be improved by using an appropriate film formation method.
- the thickness of the barrier layer 9 is preferably 400 / n [nm] or less, where n is the average refractive index of the barrier layer 9.
- n is the average refractive index of the barrier layer 9.
- the barrier property can be improved.
- the film thickness of the barrier layer 9 also depends on the refractive index and extinction coefficient of the film, but if the thickness is too thick, the influence of interference tends to occur, which affects the dependence on the spectrum and viewing angle. There is a risk. Further, if the thickness of the barrier layer 9 becomes excessively thick, it may become opaque due to light absorption or the like and it may be difficult to extract light, and the influence of total reflection may be increased.
- the thickness of the barrier layer 9 is preferably set in the above range.
- the minimum of the thickness of the barrier layer 9 is not specifically limited, For example, it can be 1 / n [nm], 10 / n [nm], or 100 / n [nm].
- the thickness of the barrier layer 9 may be 50 [nm] or more.
- the barrier layer 9 preferably has a higher refractive index than that of the resin layer, because if the refractive index is lower than that of the resin layer, total reflection occurs at the interface and there is a possibility that the efficiency is lowered.
- the resin layer may be the transparent coating layer 12.
- the first light extraction structure 10 may be provided on the entire surface, so that there is an advantage that the manufacture may be easier than in the form of FIG. Further, in the form of FIG. 4, since the first light extraction structure 10 is provided on the entire surface, no steps are formed by the first light extraction structure 10, and the layers are disconnected when the layers are stacked. There is an advantage that it can be suppressed. However, in the embodiment of FIG. 1, the barrier layer 9 does not have to be provided, and thus there is an advantage that the manufacture may be facilitated. Further, in the embodiment of FIG. 1, it is not necessary to provide the barrier layer 9, so that there is an advantage that a decrease in light extraction property due to the formation of the barrier layer 9 can be suppressed. In the embodiment of FIG. 1, the barrier layer 9 may of course be provided on the surface of the first light extraction structure 10 (transparent coating layer 12).
- the first light extraction structure 10 has a water-absorbing material having higher water absorption than the adhesive that bonds the sealing material 6 to the moisture-proof substrate 1.
- the first light extraction structure 10 can assist the water barrier property of the barrier layer 9 by providing the first light extraction structure 10 with higher water absorption than the sealing adhesive portion 16. . Therefore, deterioration of the organic layer can be suppressed and reliability can be improved.
- the water absorbing material only needs to be included in any part of the first light extraction structure 10. Specific examples of the water-absorbing material are the same as those described in the form of FIG.
- the light extraction efficiency can be further improved by further optimizing the first light extraction structure 10.
- preferred embodiments of the first light extraction structure 10 will be described with reference to FIGS. Below, although the aspect in which the barrier layer 9 is not provided is demonstrated, the barrier layer 9 may not be provided and may be provided.
- the second light extraction structure 20 may not be provided or may be provided, but is preferably provided.
- the first light extraction structure 10 is simply referred to as the light extraction structure 10.
- the side surface of the light extraction structure 10 can be constituted only by the side surface of the transparent coating layer 12.
- the side surface of the layer 12 may be a slope. The slope can be said to be a tapered surface.
- the side surface 10a of the light extraction structure 10 is a flat surface.
- the side surface 10a of the light extraction structure 10 may be configured by a curved surface.
- the side surface 10a of the light extraction structure 10 may be a convex curved surface protruding outward, or a concave curved surface retracted inward.
- FIG. 7 shows another example of the embodiment of the organic EL element.
- the same components as those in the above embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the end of the organic EL element in plan view is shown enlarged.
- the extended portion of the first electrode 2 and the sealing material 6 are omitted in the drawing, but the organic EL device may of course have these configurations.
- the outer edge of the light emitting laminate 5 is indicated by a two-dot chain line.
- the lateral width of the side convex part 31 and the lateral width of the side concave part 32 may be the same. In that case, since the proportion of the entire side protrusions 31 and the side recesses 32 can be made equal, the light extraction performance can be improved efficiently.
- the lateral width of the side surface convex portion 31 and the side surface concave portion 32 is a width in a direction perpendicular to the direction in which the side surface convex portion 31 protrudes. In FIG. 7, these horizontal widths are represented by distances in the vertical direction. Of course, the lateral width of the side convex portion 31 may be larger or smaller than the lateral width of the side concave portion 32.
- FIG. 8 shows another example of the embodiment of the organic EL element.
- the same components as those in the above embodiment are denoted by the same reference numerals, and description thereof is omitted.
- a recess 40 is provided in the light extraction structure 10.
- the stacked structure disposed between the first electrode 2 and the second electrode 4 is illustrated as the organic layer 3 ⁇ / b> A.
- the organic layer 3 ⁇ / b> A can be configured by a laminated structure of the light emitting layer 3 and the charge transfer layer 7.
- the organic layer 3A includes at least the light emitting layer 3.
- a recess 40 that is recessed larger than the concavo-convex structure 11 is provided on the first electrode 2 side, and the first electrode 2 is formed in a shape along the recess 40 on the surface of the light extraction structure 10. It is preferable. Thereby, since the total area of 3 A of organic layers becomes large compared with the case where the recess 40 is not provided, the whole light-emission amount can be increased. Moreover, when the 2nd electrode 4 is comprised with a reflective electrode, the light radiated
- the recess 40 has a depth larger than the protruding width of the concavo-convex structure 11.
- the width of the recess 40 is larger than the width of the concavo-convex structure 11.
- the light emitting laminate 5 is preferably formed along the recessed shape of the recess 40.
- the first electrode 2 is formed on the surface of the light extraction structure 10 along the recess 40.
- the first electrode 2 is recessed at the position of the recess 40.
- the organic layer 3 ⁇ / b> A is formed on the surface of the first electrode 2 along the shape of the recess 40.
- the organic layer 3 ⁇ / b> A is recessed at the position of the recess 40.
- each layer constituting the organic layer 3 ⁇ / b> A may also be recessed along the shape of the recess 40.
- the second electrode 4 is formed on the surface of the organic layer 3 ⁇ / b> A along the shape of the recess 40.
- the second electrode 4 is recessed at the position of the recess 40. Therefore, the light emitting laminate 5 is recessed at the position of the recess 40. It may be said that the light emitting laminate 5 is curved. As described above, the light emitting laminate 5 is formed along the recess 40, whereby the light extraction performance can be efficiently improved.
- FIG. 9 shows another example of the embodiment of the organic EL element.
- the same components as those in the above embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the form of FIG. 9 is a modification of the form of FIG.
- the recess 40 has a deep depth and penetrates the light extraction structure 10.
- the configuration of FIG. 9 may be the same as the configuration of FIG. 8 except for the recess 40.
- the recess 40 provided in the light extraction structure 10 penetrates the light extraction structure 10. Thereby, the light extraction property can be further enhanced.
- the light extraction structure 10 is not provided at the position of the recess 40. It can be said that a hole is opened in the light extraction structure 10 at the position of the recess 40. At the position of the recess 40, the first electrode 2 is in contact with the lower layer of the light extraction structure 10. In the form of FIG. 9, the first electrode 2 is in contact with the moisture-proof substrate 1 at the position of the recess 40.
- the depth of the recess 40 may be smaller than the thickness of the transparent coating layer 12, but preferably the depth of the recess 40 is larger than the thickness of the transparent coating layer 12. At this time, at the position of the recess 40, the unevenness of the uneven structure 11 may disappear due to the recess 40. In FIG. 8, the depth of the recess 40 is larger than the thickness of the transparent coating layer 12. In FIG. 9, it can be said that the depth of the recess 40 is the same as the thickness of the light extraction structure 10.
- the distance between the two adjacent recesses 40 is preferably 100 um or less. That is, the width of the convex portion of the light extraction structure 10 divided by the concave portion 40 is preferably 100 ⁇ m or less. Thereby, light extraction property can be improved.
- the distance between two adjacent recesses 40 may be 1 ⁇ m or more. If the distance between the recesses 40 becomes too small, the size of the concavo-convex structure 11 approaches the size of the concavo-convex structure, which may make it difficult to obtain a desired effect. More preferably, the width of the convex portion divided by the concave portion 40 is 1 to 10 ⁇ m.
- the width of the recess 40 is preferably 100 um or less.
- the width of the recess 40 is the groove width.
- the width of the recess 40 is the diameter of the recess 40.
- the width of the recess 40 is 100 ⁇ m or less, the light extraction property can be further improved.
- the width of the recess 40 may be 1 ⁇ m or more. If the width of the recess 40 is too small, the size of the concave and convex structure 11 approaches the size of the concave and convex, and it may be difficult to obtain a desired effect. More preferably, the width of the recess 40 is 1 to 10 ⁇ m.
- the width of the recess 40 and the width of the protrusion may be substantially equal.
- the width of the convex portion may be larger than the width of the concave portion 40.
- the width of the protrusion may be smaller than the width of the recess 40.
- the width of the recess 40 is the same as the width of the protrusion. Or it is more preferable that it is small.
- the side surface 40 a of the recess 40 may be provided with the side surface uneven structure of the recess 40.
- This side uneven structure may be the same as the side uneven structure 30 in the form of FIG.
- the concavo-convex structure on the side surface of the recess 40 may be a structure in which the side protruding portions and the recessed portions are alternately arranged. Adhesiveness between the first electrode 2 and the light extraction structure 10 can be enhanced because the side surface 40a of the recess 40 has irregularities. Moreover, when the side surface 40a of the recess 40 has irregularities, light scattering properties can be imparted and light extraction efficiency can be increased.
- the side surface 40a of the recess 40 is one of the side surfaces 10a of the light extraction structure 10. In that case, it may be said that the side surface uneven structure is provided on the side surface 10 a (40 a) of the light extraction structure 10 in the recess 40. Note that the side surface 40 a of the recess 40 can be said to be a side surface in the inner region of the light extraction structure 10, and the side surface 10 a of the light extraction structure 10 described in FIG. 7 can be said to be a side end surface of the light extraction structure 10.
- 6 to 9 are characterized by the shape of the light extraction structure (light extraction structure 10). 6 and 7, the edge of the light extraction structure 10 is characterized. 8 and 9, there is a feature in the recess 40 inside the light extraction structure 10. A method for forming such a light extraction structure 10 will be described.
- FIG. 10 shows an example of a method for manufacturing an organic EL element.
- FIG. 10 shows a state in which the light extraction structure 10 is processed with the laser light 51.
- the light extraction structure 10 is irradiated with a laser beam 51 by a laser irradiation device 50 and processed.
- FIG. 10 shows how organic EL elements are formed by a multi-cavity method.
- the light extraction structure 10 is formed on a moisture-proof substrate 1 larger than the area for one organic EL element, and the light extraction is performed. The processing of the end of the structure 10 is shown.
- the inside of the light extraction structure 10 can be processed with the laser light 51.
- the light extraction structure 10 may be divided into one element in the process of processing the end of the light extraction structure 10 after the large light extraction structure 10 is attached to the moisture-proof substrate 1. . In that case, the light extraction structure 10 can be efficiently divided and the end portions can be processed.
- the lighting device includes the organic EL element described above. Since this illuminating device includes an organic EL element, an illuminating device having excellent light-emitting properties can be obtained.
- the light emitting surface of one organic EL element can be, for example, a rectangular shape having a length of 10 cm or more and a width of 10 cm or more, but is not limited thereto.
- the illuminating device may be one in which a plurality of organic EL elements are arranged in a planar shape.
- the illuminating device may be composed of one organic EL element.
- the illumination device may include a wiring structure for supplying power to the organic EL element.
- the illumination device may include a housing that supports the organic EL element.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
2 第1電極
3 発光層
4 第2電極
5 発光積層体
6 封止材
7 電荷移動層
8 封止間隙
9 バリア層
10 光取り出し構造(第1の光取り出し構造)
11 凹凸構造
12 透明被覆層
13 凸部
14 凹部
15 凹凸区画
20 第2の光取り出し構造
30 側面凹凸構造
31 側面凸部
32 側面凹部
40 凹所
Claims (16)
- 光透過性を有する防湿性基板と、前記防湿性基板側から光透過性の第1電極、発光波長の異なる二以上の光を発する発光層、及び、第2電極をこの順で有する発光積層体と、前記防湿性基板に接着され前記発光積層体を覆う封止材と、を備えた有機エレクトロルミネッセンス素子であって、
前記防湿性基板の前記第1電極側に、前記防湿性基板と屈折率が略同じか前記防湿性基板よりも屈折率が小さい材料で形成された凹凸構造を有する光取り出し構造を備え、
前記凹凸構造は、高さが略等しい複数の凸部がマトリックス状の凹凸の一区画ごとに割り当てられて面状に配置することにより形成され、平面視での単位領域における前記凸部の面積率が各領域において略同一であることを特徴とする有機エレクトロルミネッセンス素子。 - 前記光取り出し構造の側面は、前記防湿性基板の表面に垂直な方向から内側に傾いた斜面であることを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造の側面は、平面視において側方に凸凹となった側面凹凸構造を有していることを特徴とする請求項1又は2に記載の有機エレクトロルミネッセンス素子。
- 前記側面凹凸構造は、凹凸の平均ピッチが0.3μmより大きく10μmより小さいことを特徴とする請求項3に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造は、前記凹凸構造よりも大きく凹んだ凹所が前記第1電極側に設けられ、
前記第1電極は、前記光取り出し構造の表面において凹所に沿った形状で形成されていることを特徴とする請求項1~4のいずれか1項に記載の有機エレクトロルミネッセンス素子。 - 前記凹所は、前記光取り出し構造を貫通していることを特徴とする請求項5に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造は、前記防湿性基板よりも屈折率が大きい材料で形成され前記凹凸構造を被覆する透明被覆層を有することを特徴とする請求項1~6のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記透明被覆層は樹脂により形成されていることを特徴とする請求項7に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造は、平面視において前記封止材よりも内側に形成されていることを特徴とする請求項1~8のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造と前記第1電極との間に、防湿性を有する光透過性のバリア層が形成されていることを特徴とする請求項1~9のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記バリア層の厚みは、このバリア層の平均屈折率をnとしたときに、400/n〔nm〕以下であることを特徴とする請求項10に記載の有機エレクトロルミネッセンス素子。
- 前記凹凸構造は、回折光学構造として形成されていることを特徴とする請求項1~11のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造は、前記封止材を前記防湿性基板に接着する接着剤よりも吸水性の高い吸水材料を有することを特徴とする請求項1~12のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記光取り出し構造は、第1の光取り出し構造であり、
前記防湿性基板は、前記第1電極とは反対側の表面に、光散乱構造を有する第2の光取り出し構造が設けられていることを特徴とする請求項1~13のいずれか1項に記載の有機エレクトロルミネッセンス素子。 - 前記第2の光取り出し構造は、前記防湿性基板の粗面化により形成されていることを特徴とする請求項14に記載の有機エレクトロルミネッセンス素子。
- 請求項1~15のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えた照明装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157011871A KR20150064203A (ko) | 2012-10-11 | 2013-10-07 | 유기 전계 발광 소자 및 조명 장치 |
US14/433,873 US9620740B2 (en) | 2012-10-11 | 2013-10-07 | Organic electroluminescence element and lighting device |
EP13845710.6A EP2908603A4 (en) | 2012-10-11 | 2013-10-07 | ORGANIC ELECTROLUMINESCENT ELEMENT AND LIGHTING DEVICE THEREWITH |
JP2014540735A JP6241757B2 (ja) | 2012-10-11 | 2013-10-07 | 有機エレクトロルミネッセンス素子及び照明装置 |
CN201380053234.6A CN104770063A (zh) | 2012-10-11 | 2013-10-07 | 有机电致发光元件以及照明装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012226297 | 2012-10-11 | ||
JP2012-226297 | 2012-10-11 | ||
JP2013154836 | 2013-07-25 | ||
JP2013-154836 | 2013-07-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014057647A1 true WO2014057647A1 (ja) | 2014-04-17 |
Family
ID=50477130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/005947 WO2014057647A1 (ja) | 2012-10-11 | 2013-10-07 | 有機エレクトロルミネッセンス素子及び照明装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9620740B2 (ja) |
EP (1) | EP2908603A4 (ja) |
JP (1) | JP6241757B2 (ja) |
KR (1) | KR20150064203A (ja) |
CN (1) | CN104770063A (ja) |
TW (1) | TW201421767A (ja) |
WO (1) | WO2014057647A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900812A (zh) * | 2015-04-23 | 2015-09-09 | 京东方科技集团股份有限公司 | 薄膜封装结构及其制作方法和显示装置 |
JP2016009554A (ja) * | 2014-06-23 | 2016-01-18 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、または有機薄膜太陽電池素子 |
WO2017141748A1 (ja) * | 2016-02-18 | 2017-08-24 | 凸版印刷株式会社 | 有機el素子、並びに照明装置、面状光源及び表示装置 |
JP2017168448A (ja) * | 2017-04-24 | 2017-09-21 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、及び有機薄膜太陽電池素子 |
JP2017174823A (ja) * | 2017-04-24 | 2017-09-28 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、及び有機薄膜太陽電池素子 |
JP2020511735A (ja) * | 2017-02-20 | 2020-04-16 | カティーバ, インコーポレイテッド | インクジェット印刷システムおよび発光要素の光出力効率を高める技術 |
JP2020198172A (ja) * | 2019-05-31 | 2020-12-10 | パイオニア株式会社 | 発光装置 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5866552B2 (ja) | 2013-03-13 | 2016-02-17 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子及びそれを用いた照明装置 |
CN105191500B (zh) * | 2013-03-13 | 2017-06-23 | 松下电器产业株式会社 | 有机电致发光元件和使用所述有机电致发光元件的照明设备 |
JP6262738B2 (ja) * | 2013-08-14 | 2018-01-17 | Jxtgエネルギー株式会社 | 発光素子、及び発光素子の製造方法 |
US10219349B2 (en) * | 2014-08-29 | 2019-02-26 | Sharp Kabushiki Kaisha | Organic electroluminescence device including a micro-cavity light extraction structure |
TWI570987B (zh) * | 2014-11-06 | 2017-02-11 | 財團法人工業技術研究院 | 光取出結構及其製造方法、及包含其之有機發光裝置 |
US10157967B2 (en) * | 2014-11-28 | 2018-12-18 | Sharp Kabushiki Kaisha | Organic electroluminescence device, illumination device, and display device |
JP6314968B2 (ja) * | 2015-12-25 | 2018-04-25 | 日亜化学工業株式会社 | 発光装置 |
CN105870358B (zh) * | 2016-04-08 | 2017-11-28 | 武汉华星光电技术有限公司 | 一种散射层的制备方法、有机发光二极管 |
KR101695652B1 (ko) * | 2016-04-11 | 2017-01-12 | 엘지디스플레이 주식회사 | 유기발광표시장치와 그의 제조방법 |
KR101896038B1 (ko) * | 2016-05-04 | 2018-09-06 | 주식회사 헥사솔루션 | 유기발광소자 |
JP2018067414A (ja) * | 2016-10-18 | 2018-04-26 | OLED Material Solutions株式会社 | 電子デバイス用基板のマザー基板 |
CN108123055B (zh) | 2016-11-30 | 2020-07-21 | 财团法人工业技术研究院 | 发光装置 |
CN108122487B (zh) | 2016-11-30 | 2020-07-17 | 财团法人工业技术研究院 | 显示面板以及感测显示面板 |
CN106981502A (zh) * | 2017-04-27 | 2017-07-25 | 武汉华星光电技术有限公司 | 一种oled显示面板及其制作方法 |
CN107393905B (zh) * | 2017-07-28 | 2019-07-09 | 天马微电子股份有限公司 | 柔性显示面板及柔性显示装置 |
CN107293650B (zh) * | 2017-08-01 | 2018-12-18 | 京东方科技集团股份有限公司 | 一种有机发光二极管显示器件及其制作方法、显示装置 |
US10892296B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
KR102167215B1 (ko) | 2018-01-03 | 2020-10-20 | 주식회사 엘지화학 | 광학 필름 |
CN108428804A (zh) * | 2018-04-19 | 2018-08-21 | 武汉华星光电技术有限公司 | Oled显示面板及其封装方法 |
KR102605887B1 (ko) * | 2018-05-08 | 2023-11-23 | 엘지디스플레이 주식회사 | 발광 표시 장치 |
CN109065757B (zh) * | 2018-08-07 | 2020-10-16 | 中国乐凯集团有限公司 | 用于oled照明器件的基板及照明器件 |
CN109585673B (zh) * | 2018-10-17 | 2021-05-18 | 云谷(固安)科技有限公司 | 显示面板及其制作方法、电子设备 |
JP7362313B2 (ja) | 2019-06-28 | 2023-10-17 | キヤノン株式会社 | 電子部品および電子部品の製造方法および検査方法、機器 |
CN112436096B (zh) * | 2020-10-22 | 2021-12-31 | 福州大学 | 一种用于光提取的随机纳米图案制备方法 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2931211B2 (ja) | 1994-09-13 | 1999-08-09 | 出光興産株式会社 | 有機el装置 |
JP2991183B2 (ja) | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
WO2003026357A1 (fr) * | 2001-09-13 | 2003-03-27 | Nissan Chemical Industries, Ltd. | Substrat transparent utilisant un element electroluminescent organique et element electroluminescent organique |
JP2003142262A (ja) * | 2001-11-06 | 2003-05-16 | Seiko Epson Corp | 電気光学装置、膜状部材、積層膜、低屈折率膜、多層積層膜、電子機器 |
JP2004281380A (ja) * | 2003-02-24 | 2004-10-07 | Sony Corp | 表示装置およびその製造方法 |
JP2006294491A (ja) | 2005-04-13 | 2006-10-26 | Seiko Epson Corp | エレクトロルミネッセンス装置、エレクトロルミネッセンス装置の製造方法、電子機器 |
JP2007335253A (ja) * | 2006-06-15 | 2007-12-27 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
JP2009522593A (ja) * | 2005-12-30 | 2009-06-11 | エルジー・ケム・リミテッド | フレキシブルディスプレイ装置およびその製造方法 |
JP2009217292A (ja) * | 2007-11-13 | 2009-09-24 | Panasonic Corp | シート |
WO2011132773A1 (ja) * | 2010-04-22 | 2011-10-27 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
JP2012109255A (ja) * | 2005-03-10 | 2012-06-07 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス用樹脂フィルム基板、および有機エレクトロルミネッセンスデバイス |
JP2012174410A (ja) * | 2011-02-18 | 2012-09-10 | Mitsubishi Rayon Co Ltd | 有機エレクトロルミネッセンス素子 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195142B1 (en) * | 1995-12-28 | 2001-02-27 | Matsushita Electrical Industrial Company, Ltd. | Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element |
JP2005063838A (ja) | 2003-08-13 | 2005-03-10 | Toshiba Matsushita Display Technology Co Ltd | 光学デバイス及び有機el表示装置 |
TWI232701B (en) | 2004-08-03 | 2005-05-11 | Ind Tech Res Inst | Photonic crystal organic light-emitting device |
JP2006155940A (ja) | 2004-11-25 | 2006-06-15 | Matsushita Electric Works Ltd | 調光調色特性を備えた有機el光源装置及び照明装置 |
JP2008108439A (ja) | 2006-10-23 | 2008-05-08 | Nec Lighting Ltd | 電界発光素子および電界発光パネル |
KR100873517B1 (ko) * | 2007-11-21 | 2008-12-15 | 한국기계연구원 | 유기발광소자 |
JP5633105B2 (ja) * | 2008-10-23 | 2014-12-03 | 日本ゼオン株式会社 | 光源装置及び液晶表示装置 |
JP4631963B2 (ja) * | 2008-12-02 | 2011-02-16 | ブラザー工業株式会社 | インクジェット記録装置およびインクジェット記録方法 |
US7957621B2 (en) | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
JP2010146893A (ja) | 2008-12-19 | 2010-07-01 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子、及びその製造方法 |
JP5450449B2 (ja) * | 2009-05-12 | 2014-03-26 | パナソニック株式会社 | 光学シート、発光装置および光学シートの製造方法 |
JP5731830B2 (ja) | 2010-01-19 | 2015-06-10 | パナソニック株式会社 | 面状発光装置 |
JP2012079663A (ja) | 2010-10-06 | 2012-04-19 | Kuraray Co Ltd | 面光源素子及びそれを備えた照明装置 |
JP5492798B2 (ja) * | 2011-01-24 | 2014-05-14 | 株式会社日立製作所 | 有機発光装置およびこれを用いた光源装置 |
KR101715112B1 (ko) * | 2012-06-14 | 2017-03-10 | 쌩-고벵 글래스 프랑스 | Oled 소자용 적층체, 그 제조방법 및 이를 구비한 oled 소자 |
-
2013
- 2013-10-07 WO PCT/JP2013/005947 patent/WO2014057647A1/ja active Application Filing
- 2013-10-07 US US14/433,873 patent/US9620740B2/en active Active
- 2013-10-07 CN CN201380053234.6A patent/CN104770063A/zh active Pending
- 2013-10-07 JP JP2014540735A patent/JP6241757B2/ja active Active
- 2013-10-07 EP EP13845710.6A patent/EP2908603A4/en not_active Withdrawn
- 2013-10-07 KR KR1020157011871A patent/KR20150064203A/ko not_active Application Discontinuation
- 2013-10-11 TW TW102136813A patent/TW201421767A/zh unknown
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2931211B2 (ja) | 1994-09-13 | 1999-08-09 | 出光興産株式会社 | 有機el装置 |
JP2991183B2 (ja) | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
WO2003026357A1 (fr) * | 2001-09-13 | 2003-03-27 | Nissan Chemical Industries, Ltd. | Substrat transparent utilisant un element electroluminescent organique et element electroluminescent organique |
JP2003142262A (ja) * | 2001-11-06 | 2003-05-16 | Seiko Epson Corp | 電気光学装置、膜状部材、積層膜、低屈折率膜、多層積層膜、電子機器 |
JP2004281380A (ja) * | 2003-02-24 | 2004-10-07 | Sony Corp | 表示装置およびその製造方法 |
JP2012109255A (ja) * | 2005-03-10 | 2012-06-07 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス用樹脂フィルム基板、および有機エレクトロルミネッセンスデバイス |
JP2006294491A (ja) | 2005-04-13 | 2006-10-26 | Seiko Epson Corp | エレクトロルミネッセンス装置、エレクトロルミネッセンス装置の製造方法、電子機器 |
JP2009522593A (ja) * | 2005-12-30 | 2009-06-11 | エルジー・ケム・リミテッド | フレキシブルディスプレイ装置およびその製造方法 |
JP2007335253A (ja) * | 2006-06-15 | 2007-12-27 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
JP2009217292A (ja) * | 2007-11-13 | 2009-09-24 | Panasonic Corp | シート |
WO2011132773A1 (ja) * | 2010-04-22 | 2011-10-27 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
JP2012174410A (ja) * | 2011-02-18 | 2012-09-10 | Mitsubishi Rayon Co Ltd | 有機エレクトロルミネッセンス素子 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2908603A4 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016009554A (ja) * | 2014-06-23 | 2016-01-18 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、または有機薄膜太陽電池素子 |
CN104900812A (zh) * | 2015-04-23 | 2015-09-09 | 京东方科技集团股份有限公司 | 薄膜封装结构及其制作方法和显示装置 |
US10090487B2 (en) | 2015-04-23 | 2018-10-02 | Boe Technology Group Co., Ltd. | Thin film packaging structure, method for fabrication thereof and display device |
WO2017141748A1 (ja) * | 2016-02-18 | 2017-08-24 | 凸版印刷株式会社 | 有機el素子、並びに照明装置、面状光源及び表示装置 |
JP2020511735A (ja) * | 2017-02-20 | 2020-04-16 | カティーバ, インコーポレイテッド | インクジェット印刷システムおよび発光要素の光出力効率を高める技術 |
JP2022172211A (ja) * | 2017-02-20 | 2022-11-15 | カティーバ, インコーポレイテッド | インクジェット印刷システムおよび発光要素の光出力効率を高める技術 |
JP2017168448A (ja) * | 2017-04-24 | 2017-09-21 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、及び有機薄膜太陽電池素子 |
JP2017174823A (ja) * | 2017-04-24 | 2017-09-28 | 王子ホールディングス株式会社 | 半導体素子用基板、有機発光ダイオード素子、及び有機薄膜太陽電池素子 |
JP2020198172A (ja) * | 2019-05-31 | 2020-12-10 | パイオニア株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104770063A (zh) | 2015-07-08 |
KR20150064203A (ko) | 2015-06-10 |
US20150270512A1 (en) | 2015-09-24 |
EP2908603A4 (en) | 2015-12-16 |
TW201421767A (zh) | 2014-06-01 |
JPWO2014057647A1 (ja) | 2016-08-25 |
JP6241757B2 (ja) | 2017-12-06 |
US9620740B2 (en) | 2017-04-11 |
EP2908603A1 (en) | 2015-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6241757B2 (ja) | 有機エレクトロルミネッセンス素子及び照明装置 | |
KR101364040B1 (ko) | 유기전자소자용 기판 | |
JP5551200B2 (ja) | 有機電界発光素子、照明装置及び有機電界発光素子の製造方法 | |
WO2014185063A1 (ja) | 有機エレクトロルミネッセンス素子及び照明装置 | |
US9882160B2 (en) | Optoelectronic component and method for producing an optoelectronic component | |
JP2011216267A (ja) | 有機el素子,有機el画像表示装置の製造方法 | |
KR20150056525A (ko) | 유기 전계 발광 소자 | |
JP6694919B2 (ja) | 照明パネルおよびその製造方法、照明モジュール、照明装置、並びに照明システム | |
WO2013146350A1 (ja) | 発光装置および発光装置の製造方法 | |
KR101631729B1 (ko) | 유기 복사 방출 소자 제조 방법 및 유기 복사 방출 소자 | |
KR102661550B1 (ko) | 유기발광소자를 이용한 조명장치 및 그 제조방법 | |
US10892445B2 (en) | Light apparatus for organic light emitting device | |
KR101924083B1 (ko) | 발광장치 및 그 제조방법 | |
WO2014034308A1 (ja) | 有機発光素子及び有機発光素子を用いた有機発光光源装置 | |
WO2017213262A1 (ja) | 有機el素子、並びに有機el素子を利用した照明装置、面状光源及び表示装置 | |
JP7506436B2 (ja) | 有機el素子、有機el照明装置、および有機el素子の着色抑制をする光取出し用フィルム | |
JP2006120365A (ja) | 有機el素子 | |
KR20130135142A (ko) | 유기전자장치 | |
JP2010103120A (ja) | 光学基板、発光素子、表示装置およびそれらの製造方法 | |
JP2023548288A (ja) | 分割oled | |
JP2016042418A (ja) | 有機エレクトロルミネッセンスパネル及び有機エレクトロルミネッセンスパネルの製造方法 | |
JP2006302656A (ja) | 色変換フィルタおよびそれを用いた有機elディスプレイ | |
CN102130304A (zh) | 一种提升光输出效率的有机发光器件 | |
WO2014087462A1 (ja) | 有機エレクトロルミネッセンス発光装置及びこれに用いる有機エレクトロルミネッセンス素子並びにこれらに用いる光取出しシート | |
JP2008016295A (ja) | 蒸着による色変換層の製造方法、該製造方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13845710 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014540735 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14433873 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20157011871 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013845710 Country of ref document: EP |