[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2012046539A1 - マルチチップ実装用緩衝フィルム - Google Patents

マルチチップ実装用緩衝フィルム Download PDF

Info

Publication number
WO2012046539A1
WO2012046539A1 PCT/JP2011/070691 JP2011070691W WO2012046539A1 WO 2012046539 A1 WO2012046539 A1 WO 2012046539A1 JP 2011070691 W JP2011070691 W JP 2011070691W WO 2012046539 A1 WO2012046539 A1 WO 2012046539A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin layer
chip
light
multichip
film
Prior art date
Application number
PCT/JP2011/070691
Other languages
English (en)
French (fr)
Inventor
明 石神
士行 蟹澤
秀次 波木
英明 馬越
青木 正治
Original Assignee
ソニーケミカル&インフォメーションデバイス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニーケミカル&インフォメーションデバイス株式会社 filed Critical ソニーケミカル&インフォメーションデバイス株式会社
Priority to US13/805,553 priority Critical patent/US8758546B2/en
Priority to KR1020137008719A priority patent/KR101853151B1/ko
Priority to CN201180048307.3A priority patent/CN103155128B/zh
Priority to EP11830472.4A priority patent/EP2626894B1/en
Publication of WO2012046539A1 publication Critical patent/WO2012046539A1/ja
Priority to HK13112538.9A priority patent/HK1185182A1/zh
Priority to US14/275,460 priority patent/US20140248477A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/304Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/32Layered products comprising a layer of synthetic resin comprising polyolefins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06Homopolymers or copolymers of vinyl chloride
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/306Resistant to heat
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/416Reflective
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/536Hardness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364Palladium [Pd] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731Location prior to the connecting process
    • H01L2224/73101Location prior to the connecting process on the same surface
    • H01L2224/73103Bump and layer connectors
    • H01L2224/73104Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/75315Elastomer inlay
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/75317Removable auxiliary member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/7532Material of the auxiliary member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981Apparatus chuck
    • H01L2224/75985Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81192Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399Material
    • H01L2224/814Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81444Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832Applying energy for connecting
    • H01L2224/83201Compression bonding
    • H01L2224/83203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/9205Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9211Parallel connecting processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92142Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92143Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495Thickness [relative or absolute]
    • Y10T428/24967Absolute thicknesses specified
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/3154Of fluorinated addition polymer from unsaturated monomers
    • Y10T428/31544Addition polymer is perhalogenated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Definitions

  • the present invention relates to a buffer film for multichip mounting and a method of manufacturing a multichip module using the same.
  • a plurality of chip elements such as LED elements are collectively connected to a substrate by heating and pressing with a bonding head via an insulating adhesive or an anisotropic conductive adhesive.
  • the heat and pressure applied to each chip element are different due to the difference or variation in the height between chip elements, and the difference or variation in the thickness of the wiring formed on the chip element or the substrate or the bump height.
  • a chip element that is not sufficiently heated and pressurized or a chip element that is excessively heated and pressurized may occur. In the former case, connection failure may occur, and in the latter case, the chip element may be damaged.
  • a heat-resistant rubber-like elastic body is placed between the substrate and the bonding head as a buffer material in order to cancel the height difference or variation between the chip elements during the connection operation with the bonding head. It has been proposed to heat and press the chip element onto the substrate via a heat-resistant rubber-like elastic body.
  • An object of the present invention is to solve the above-described conventional problems, and to ensure good connection reliability without causing misalignment during multichip mounting. .
  • the present inventors provide a heat-resistant resin layer to be disposed on the chip element side as a cushioning material to be used in multi-chip mounting, and is relatively resistant to deformation without exceeding a predetermined linear expansion coefficient.
  • a resin layer and a flexible resin layer to be disposed on the bonding head side are laminated with a relatively easily deformable flexible resin made of a material having a predetermined Shore A hardness
  • the inventors have found that the above object can be achieved, and have completed the present invention.
  • the present invention is a multichip mounting buffer film having a heat resistant resin layer and a flexible resin layer formed thereon, and the heat resistant resin layer has a linear expansion coefficient of 80 ppm / ° C. or less.
  • the flexible resin layer is formed from a resin material having a Shore A hardness of 10 to 80 according to JIS-K6253.
  • the present invention also provides the following steps (A) to (C) in a method of manufacturing a multichip module in which a plurality of chip elements are mounted on a substrate by heating and pressing with a bonding head via an adhesive. ): Process (A) A step of aligning a plurality of chip elements to a substrate via an adhesive and temporarily attaching them; Process (B) A step of arranging the multi-chip mounting buffer film between the chip element and the bonding head such that the heat-resistant resin layer is on the chip element side; Process (C) Provided is a manufacturing method including a step of connecting a plurality of chip elements to a substrate by heating and pressing the substrate with a bonding head via a multi-chip mounting buffer film.
  • the buffer film for multichip mounting of the present invention is a heat-resistant resin layer to be disposed on the chip element side, and is a relatively heat-resistant resin layer that does not exceed a predetermined linear expansion coefficient and is not easily deformed.
  • the flexible resin layer to be disposed has a structure in which a relatively easily deformable flexible resin made of a material having a predetermined Shore A hardness is laminated. For this reason, when heat-pressing the buffer film with a bonding head in multi-chip mounting, the heat-resistant resin layer in contact with the chip element is difficult to deform, and as a result, it is possible to suppress misalignment of the chip element. It becomes. On the other hand, since the flexible resin layer in contact with the bonding head is easily deformed, the difference in height and variation of the chip elements are canceled, and good heat and pressure are applied to each of the plurality of chip elements. Connection reliability can be ensured.
  • FIG. 1 is a schematic cross-sectional view of a multichip mounting buffer film of the present invention.
  • FIG. 2 is an explanatory diagram of the multichip module manufacturing method of the present invention.
  • FIG. 3 is an explanatory view of the method for manufacturing a multichip module of the present invention in which a multichip mounting buffer film is applied on a single wafer.
  • FIG. 4 is an explanatory view of the multichip module manufacturing method of the present invention in which a buffer film for multichip mounting is applied roll-to-roll.
  • FIG. 5 is an explanatory diagram of the multichip module manufacturing method of the present invention.
  • FIG. 6 is a schematic cross-sectional view of a multichip module obtained by the multichip module manufacturing method of the present invention.
  • FIG. 1 is a cross-sectional view of a multichip mounting buffer film 10 having a heat resistant resin layer 1 and a flexible resin layer 2 formed thereon.
  • the heat-resistant resin layer 1 constituting the multi-chip mounting buffer film 10 of the present invention is disposed on the chip element side during multi-chip mounting.
  • glass is used. It has a linear expansion coefficient of 80 ppm / ° C. or less, preferably 20 to 50 ppm / ° C. in the temperature range below the transition temperature.
  • it is more than the minimum of the preferable range of a linear expansion coefficient, height difference thru
  • alignment shift can be suppressed more.
  • heat-resistant resin layer 1 examples include polyimide resin films (for example, Upilex-25S from Ube Industries, Ltd.), polyester resin films (for example, Teijin Tetron film from Teijin Limited), polyvinyl chloride resin, and the like. Films (for example, Epilon CB3005 from Taihei Chemicals Co., Ltd.), polyolefin resin films (SAN8041 from Tech Jam Co., Ltd.) or fluororesin films (Niftron (polytetrafluoroethylene) from Nitto Denko Corporation) etc. Can be mentioned.
  • the layer thickness of the heat-resistant resin layer 1 is preferably 200 ⁇ m or less, and more preferably 10 to 50 ⁇ m, because the difference in height or variation of the chip elements cannot be sufficiently canceled if it is too thick. It should be noted that if it is at least the lower limit of the preferred range of the layer thickness, it is possible to more effectively suppress misalignment, and if it is not more than the upper limit of the preferred range, the height difference or variation of the chip elements etc. can be sufficiently canceled. can do.
  • the flexible resin layer 2 constituting the multi-chip mounting buffer film 10 of the present invention is disposed on the bonding head side during multi-chip mounting, and has a Shore A hardness of 10 to 80 according to JIS-K6253. Preferably, it is formed from 40 to 75 resin materials. If the Shore A hardness is within this range, the height difference or variation of the chip element or the like can be sufficiently canceled.
  • Such a resin material is preferably a silicone resin material. More preferably, an anion living polymerizable silicone resin composition is mentioned. Specifically, silicones (KE-1281, X-32-2020, Shinetsu Silicone Co., Ltd., XE13-C1822 from MOMENTIVE, etc.), dimethyl silicones (Ker-2600, KER-2500, Shin-Etsu Silicone Co., Ltd.) Is mentioned.
  • the layer thickness of the flexible resin layer 2 As the layer thickness of the flexible resin layer 2, if the thickness is too thin, the height difference or variation of the chip element or the like cannot be sufficiently canceled, and good connection reliability cannot be obtained.
  • the thickness is preferably 40 to 60 ⁇ m. In addition, if it is more than the lower limit of the preferred range of this layer thickness, the height difference or variation of the chip element etc. can be canceled more fully, and if it is less than the upper limit of the preferred range, good connection reliability is ensured. It becomes possible to do.
  • the multi-chip mounting buffer film 10 described above may be provided with another resin layer between the heat-resistant resin layer 1 and the flexible resin layer 2 as long as the effects of the present invention are not impaired.
  • the buffer film 10 for multichip mounting of the present invention is manufactured by applying a resin material for forming the flexible resin layer 2 to the film-like heat-resistant resin layer 1 according to a conventional method and drying (or polymerizing) the resin material. can do.
  • the multichip mounting buffer film 10 of the present invention is a method for manufacturing a multichip module in which a plurality of chip elements are mounted on a substrate by applying heat and pressure using a bonding head via an adhesive. It can be preferably applied to.
  • This method of manufacturing a multichip module includes the following steps (A) to (C).
  • the chip element is aligned and temporarily attached to the substrate via an adhesive.
  • a substrate 24 having wirings 22 and bumps 23 formed on a known thermocompression bonding stage 21 made of stainless steel or the like is disposed, and a chip is interposed via an adhesive 25.
  • the element 26 is aligned by a flip chip method and temporarily attached. There are no particular restrictions on the alignment operation and temporary sticking operation itself of the chip element 26, and the alignment operation and temporary sticking operation in the conventional multichip module manufacturing method can be applied.
  • Examples of the chip element 26 applicable to the manufacturing method of the present invention include an IC element and an LED (light emitting diode) element.
  • the substrate 24 on which the wirings 22 and the bumps 23 are formed includes wirings formed from various metal materials, transparent electrode materials such as ITO, etc. by a printing method, a dry plating method, a wet plating method, a photolithography method, and the like. Examples thereof include a glass substrate, a plastic substrate, and a ceramic substrate having gold bumps formed by vapor deposition, plating, printing, bonder method (stud bump), and bumps such as solder bumps.
  • a known insulating adhesive paste (NCP) or film (NCF), anisotropic conductive paste (ACP) or film (ACF) can be used.
  • NCP insulating adhesive paste
  • ACP anisotropic conductive paste
  • ACF film
  • the chip element 26 is an LED element
  • Such an anisotropic conductive adhesive having light reflectivity preferably contains light reflective acicular insulating particles. The details will be described again after the description of the step (C).
  • the multi-chip mounting buffer film 10 of the present invention is disposed between the chip element 26 and a bonding head 27 which preferably has a metal pressure-bonding surface and includes a heater.
  • the heat-resistant resin layer 1 of the multichip mounting buffer film 10 is arranged on the chip element 26 side.
  • the multi-chip mounting buffer film 10 may be applied as a single wafer as shown in FIG. 3, but is preferably applied as roll-to-roll as shown in FIG. If it is roll-to-roll, the exchange operation of the buffer film 10 for multichip mounting will become easy, and productivity can be improved.
  • anisotropic conductive adhesive having light reflectivity that can be preferably applied as the adhesive 25 will be described in detail.
  • An adhesive that can be preferably applied when the chip element is an LED element is a light-reflective anisotropic conductive adhesive, a thermosetting resin composition, conductive particles, and a light-reflective needle having an aspect ratio within a predetermined range. Insulating particles are included. By using acicular particles as the light-reflective insulating particles, cracks in the anisotropic conductive adhesive can be prevented and high connection reliability can be obtained.
  • thermosetting resin composition contains spherical particles
  • the internal stress of the thermosetting resin composition is reduced when the stretchability of the resin composition decreases (hardens) as the temperature changes.
  • cracks are likely to occur at the interface between the spherical particles and the thermosetting resin composition.
  • connection reliability is impaired. Therefore, the light-reflective anisotropic conductive adhesive is required to have excellent toughness.
  • the needle-shaped light-reflective insulating particles having an aspect ratio within a predetermined range are used as a thermosetting resin composition.
  • thermosetting resin composition the needle-like light-reflective insulating particles arranged in random directions are easy to bend and bend themselves, so that the thermosetting resin accompanying the temperature change.
  • the internal stress of the composition can be propagated and absorbed in the needle-like crystal, and the internal stress can be suppressed from being transmitted to the thermosetting resin composition. Therefore, the light-reflective anisotropic conductive adhesive containing light-reflective needle-like insulating particles exhibits excellent toughness, and even if the thermosetting resin composition expands or contracts due to a temperature change, Peeling of the adhesive surface can be suppressed.
  • Such light-reflective needle-like insulating particles are preferably made of a needle-like inorganic compound exhibiting white color, and reflect light incident on the light-reflective anisotropic conductive adhesive to the outside.
  • the light-reflective needle-like insulating particles themselves exhibit white color, the wavelength dependence of the reflection characteristics with respect to visible light can be reduced, and visible light can be efficiently reflected.
  • Such a light-reflective anisotropic conductive adhesive exhibits white particles and particles made of an inorganic compound having an acicular shape with an aspect ratio in a predetermined range (hereinafter referred to as “white acicular inorganic particles”).
  • white acicular inorganic particles By containing, the reduction of the reflectance with respect to the light emitted from the light emitting element can be suppressed to maintain the light emitting efficiency of the light emitting element, and cracks and the like can be prevented to obtain high connection reliability.
  • the white needle-like inorganic particles include zinc oxide whiskers, titanium oxide whiskers, potassium titanate whiskers, titanate whiskers such as titanate whiskers, aluminum borate whiskers, and wollastonite (kaolin silicate needle crystals).
  • the zinc oxide whisker has a high whiteness and is a catalyst for photodegradation even when photocuring of the cured product of the thermosetting resin composition in the cured anisotropic conductive adhesive is concerned. It is particularly preferable because it has no property.
  • the fiber diameter is preferably 5 ⁇ m or less.
  • the aspect ratio of the white needle-like inorganic particles made of single needle crystals is preferably greater than 10 and less than 35, and particularly preferably greater than 10 and less than 20.
  • the aspect ratio of the white needle-like inorganic particles is larger than 10, the internal stress of the thermosetting resin composition can be sufficiently propagated and absorbed.
  • the aspect ratio of the white needle-like inorganic particles is less than 35, the needle-like crystals are not easily broken and can be uniformly dispersed in the thermosetting resin composition. When this aspect ratio is less than 20, the dispersibility in the thermosetting resin composition can be further improved.
  • thermosetting resin composition can be increased by adding white needle-like inorganic particles having an aspect ratio of more than 10 and less than 35 to the thermosetting resin composition, the light reflection Even if the anisotropic anisotropic conductive adhesive expands or contracts, it is possible to suppress the peeling or cracking of the adhesive surface.
  • the white needle-like inorganic particles for example, a shape formed by combining the center and the apex of a tetrahedron such as Tetrapod (registered trademark) instead of such a single needle crystal, etc.
  • a crystal having a plurality of needle-like shapes may be used.
  • the white needle-like inorganic particles of double needle crystals are superior in that they have a higher thermal conductivity than the white needle-like inorganic particles of single needle crystals, but have a bulkier crystal structure than single needle crystals. Therefore, it is necessary to be careful not to damage the substrate or the joined part of the element by the needle-like part during thermocompression bonding.
  • the acicular white inorganic particles may be treated with a silane coupling agent, for example. Dispersibility in the thermosetting resin composition can be improved by treating the acicular white inorganic particles with the silane coupling agent. For this reason, the acicular white inorganic particle processed with the silane coupling agent can be mixed in the thermosetting resin composition uniformly in a short time.
  • the white needle-like inorganic particles have a refractive index (JIS K7142) that is preferably greater than the refractive index of the cured product of the thermosetting resin composition (JIS K7142), and more preferably at least about 0.02. preferable. This is because if the difference in refractive index is small, the reflection efficiency at the interface between them decreases. That is, as white needle-like inorganic particles, even if they are light-reflective and insulating inorganic particles, their refractive index is less than the refractive index of the thermosetting resin composition used, such as SiO 2. Is not applicable.
  • the content is preferably 1 to 50% by volume (Vol%), more preferably 5 to 25% by volume, based on the thermosetting resin composition.
  • the light-reflective anisotropic conductive adhesive applicable to the production method of the present invention contains such white needle-like inorganic particles and covers most of the conductive particles, the conductive particles have a color such as brown. Even when presenting, the whiteness of the thermosetting resin composition is realized. Such whiteness reduces the wavelength dependence of the reflection characteristics for visible light and makes it easier to reflect visible light. Therefore, the reflectance of light emitted from the LED element is independent of the type of color of the substrate electrode. In addition, it is possible to efficiently use light emitted from the LED element toward the lower surface side. As a result, the light emission efficiency (light extraction efficiency) of the LED element can be improved.
  • the light-reflective anisotropic conductive adhesive described above is a particle made of a spherical inorganic compound exhibiting white (hereinafter referred to as this) as a spherical insulating particle exhibiting white. May be referred to as “white spherical inorganic particles”).
  • the thermosetting resin composition can be further whitened to further improve the light extraction efficiency of the LED element.
  • the toughness of the thermosetting resin composition can be increased.
  • the addition amount (Vol%) of the white needle-like inorganic particles be equal to or more than the addition amount (Vol%) of the white spherical inorganic particles.
  • the light-reflective anisotropic conductive adhesive can exhibit excellent toughness even when white spherical inorganic particles are added together with white needle-like inorganic particles. By being able to do, even if it expands and contracts, it can suppress that peeling of an adhesive surface and a crack generate
  • metal material particles used in conventional conductive particles for anisotropic conductive connection can be used. That is, examples of the metal material for the conductive particles include gold, nickel, copper, silver, solder, palladium, aluminum, alloys thereof, and multilayered products thereof (for example, nickel plating / gold flash plating). .
  • thermosetting resin composition since white needle-like inorganic particles cover most of the conductive particles, the thermosetting resin composition is prevented from exhibiting brown color due to the conductive particles. And the whole thermosetting resin composition comes to exhibit high whiteness.
  • metal-coated resin particles obtained by coating resin particles with a metal material may be used.
  • resin particles include styrene resin particles, benzoguanamine resin particles, and nylon resin particles.
  • a method of coating the resin particles with a metal material a conventionally known method can be employed, and for example, an electroless plating method, an electrolytic plating method, or the like can be used.
  • the layer thickness of the metal material to be coated may be any thickness that can ensure good connection reliability, and is usually 0.1 to 3 ⁇ m, although it depends on the particle size of the resin particles and the type of metal.
  • the shape of the resin particles is preferably a spherical shape, but may be a flake shape or a rugby ball shape.
  • the metal-coated resin particles have a spherical shape, and if the particle size is too large, the connection reliability tends to decrease, so 1 to 20 ⁇ m is preferable, and 3 to 10 ⁇ m is more preferable.
  • the conductive particles contained in the light-reflective anisotropic conductive adhesive as described above are, for example, light-reflective conductive particles imparted with light reflectivity as shown in the cross-sectional views of FIGS. 7A and 7B. It is also possible to do.
  • the light-reflective conductive particle 100 shown in FIG. 7A includes a core particle 110 coated with a metal material, and titanium oxide (TiO 2 ) particles, zinc oxide (ZnO) particles, or aluminum oxide (Al 2 O 3 ) on the surface thereof. And a light reflection layer 130 formed of at least one kind of inorganic particles 120 selected from the particles.
  • the light reflecting layer 130 formed from the inorganic particles 120 exhibits a color in the range from white to gray. For this reason, as described above, the wavelength dependency of the reflection characteristic with respect to visible light is small and the visible light is easily reflected, so that the luminous efficiency of the LED element can be further improved.
  • the core particle 110 is used for anisotropic conductive connection, and the surface is made of a metal material.
  • the core particle 110 for example, an aspect in which the core particle 110 itself is a metal material, or an aspect in which the surface of the resin particle is coated with a metal material can be exemplified.
  • the layer thickness of the light reflecting layer 130 is preferably 0.5 to 50%, more preferably 1 to 25%.
  • the particle size of the inorganic particles 120 is preferably 0.02 to 4 ⁇ m, more preferably 0.1 to 1 ⁇ m, and particularly preferably 0.2 to 0.5 ⁇ m. In this case, from the viewpoint of the wavelength of the light to be reflected, the particle size of the inorganic particles 120 is set so that the light to be reflected (that is, the light emitted from the light emitting element) does not pass through.
  • examples of the shape of the inorganic particles 120 include an amorphous shape, a spherical shape, a scaly shape, and a needle shape.
  • a spherical shape is preferable from the viewpoint of the light diffusion effect
  • a scaly shape is preferable from the viewpoint of the total reflection effect. .
  • the light-reflective conductive particles 100 are manufactured by a known film formation technique (a so-called mechanofusion method) in which a film made of small particles is formed on the surface of a large particle size particle by physically colliding large and small powders. Can do.
  • the inorganic particles 120 are fixed so as to bite into the metal material on the surface of the core particle 110, and on the other hand, since the inorganic particles are hardly fused and fixed, the monolayer of the inorganic particles constitutes the light reflecting layer 130. Therefore, in the case of FIG. 7A, the layer thickness of the light reflecting layer 130 is considered to be equal to or slightly thinner than the particle size of the inorganic particles 120.
  • the light-reflective conductive particle 200 shown in FIG. 7B contains a thermoplastic resin 240 in which the light-reflective layer 230 functions as an adhesive, and the inorganic particles 220 are also fixed to each other by the thermoplastic resin 240, so that the inorganic particles 220 are multilayered. It differs from the light-reflective conductive particle 100 in FIG. 7A in that it is (for example, two layers or three layers). By including such a thermoplastic resin 240, the mechanical strength of the light reflection layer 230 is improved, and the inorganic particles are less likely to be peeled off.
  • thermoplastic resin 240 a halogen-free thermoplastic resin can be preferably used for the purpose of low environmental load.
  • polyolefins such as polyethylene and polypropylene, polystyrene, and acrylic resins can be preferably used.
  • Such light-reflective conductive particles 200 can also be manufactured by a mechanical fusion method. If the particle size of the thermoplastic resin 240 applied to the mechanical fusion method is too small, the adhesion function is lowered, and if it is too large, it is difficult to adhere to the core particle 210, so 0.02 to 4 ⁇ m is preferable, and 0.1 to 1 ⁇ m is preferable. Is more preferable. Further, if the blending amount of the thermoplastic resin 240 is too small, the adhesion function is deteriorated, and if it is too large, aggregates of particles are formed. 500 parts by mass is preferable, and 4 to 25 parts by mass is more preferable.
  • thermosetting resin composition contained in the light-reflective anisotropic conductive adhesive it is preferable to use a colorless and transparent one as much as possible. This is because the light-reflecting conductive particles in the light-reflective anisotropic conductive adhesive are reflected without lowering the light reflection efficiency and without changing the light color of the incident light.
  • the colorless and transparent means that the light-reflective anisotropic conductive adhesive cured product has a light transmittance (JIS K7105) of 80% or more with respect to visible light having a wavelength of 380 to 780 nm, preferably 80% or more. It means 90% or more.
  • the blending amount of the conductive particles such as the light-reflective conductive particles with respect to 100 parts by mass of the thermosetting resin composition is too small, poor connection occurs, and if it is too large, short circuit between patterns occurs. Since it tends to occur, 1 to 100 parts by mass is preferable, and 10 to 50 parts by mass is more preferable.
  • the light-reflective anisotropic conductive adhesive has a reflectance (JIS K7105) with respect to light having a wavelength of 450 nm of a value higher than 9% by adding white needle-like inorganic particles to the thermosetting resin composition.
  • the reflective properties of the light-reflective anisotropic conductive adhesive are adjusted by appropriately adjusting various other factors such as the reflective properties and blending amount of the light-reflective conductive particles, the blending composition of the thermosetting resin composition, and the like.
  • a reflectance (JIS K7105) with respect to light having a wavelength of 450 nm is realized at 30% or more. Usually, if the amount of the light-reflective conductive particles having good reflection characteristics is increased, the reflectance tends to increase.
  • the reflection characteristics of the light-reflective anisotropic conductive adhesive can be evaluated from the viewpoint of refractive index. That is, when the reflectance of the cured product is larger than the refractive index of the cured product of the thermosetting resin composition excluding the conductive particles and the light-reflective insulating particles, the light-reflective insulating particles and the thermosetting surrounding them. This is because the amount of light reflection at the interface with the cured product of the conductive resin composition increases.
  • the difference obtained by subtracting the refractive index of the cured product of the thermosetting resin composition (JIS K7142) from the refractive index of the light-reflective insulating particles (JIS K7142) is preferably 0.02 or more, more preferably Is desirably 0.2 or more.
  • the refractive index of the thermosetting resin composition mainly composed of epoxy resin is about 1.5.
  • thermosetting resin composition those used in conventional anisotropic conductive adhesives can be used.
  • a thermosetting resin composition is obtained by blending an insulating binder resin with a curing agent.
  • the insulating binder resin is preferably an epoxy resin mainly composed of an alicyclic epoxy compound, a heterocyclic epoxy compound, a hydrogenated epoxy compound, or the like.
  • Preferred examples of the alicyclic epoxy compound include those having two or more epoxy groups in the molecule. These may be liquid or solid. Specific examples include glycidyl hexahydrobisphenol and epoxycyclohexenylmethyl-epoxycyclohexenecarboxylate. Among them, glycidyl hexavidrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ′, 4 is preferable because it can ensure light transmission suitable for mounting LED elements on the cured product and is excellent in rapid curing. '-Epoxycyclohexenecarboxylate can be preferably used.
  • heterocyclic epoxy compound examples include an epoxy compound having a triazine ring, and 1,3,5-tris (2,3-epoxypropyl) -1,3,5-triazine-2,4 is particularly preferable. , 6- (1H, 3H, 5H) -trione.
  • hydrogenated epoxy compound hydrogenated products of the above-described alicyclic epoxy compounds and heterocyclic epoxy compounds, and other known hydrogenated epoxy resins can be used.
  • the alicyclic epoxy compound, heterocyclic epoxy compound and hydrogenated epoxy compound may be used alone, but two or more kinds may be used in combination.
  • other epoxy compounds may be used in combination as long as the effects of the present invention are not impaired.
  • the curing agent examples include acid anhydrides, imidazole compounds, and dicyan.
  • acid anhydrides that are difficult to discolor the cured product particularly alicyclic acid anhydride-based curing agents, can be preferably used.
  • methylhexahydrophthalic anhydride etc. can be mentioned preferably.
  • thermosetting resin composition when using an alicyclic epoxy compound and an alicyclic acid anhydride-based curing agent, the respective amounts used are uncured if there is too little alicyclic acid anhydride-based curing agent.
  • the epoxy compound increases, and if it is too much, the corrosion of the adherend material tends to be accelerated due to the influence of the excess curing agent. Therefore, the alicyclic acid anhydride-based curing is performed on 100 parts by mass of the alicyclic epoxy compound.
  • the agent is preferably used in a proportion of 80 to 120 parts by mass, more preferably 95 to 105 parts by mass.
  • the light-reflective anisotropic conductive adhesive can be produced by uniformly mixing the thermosetting resin composition, conductive particles, and white needle-like inorganic particles that are light-reflective insulating particles.
  • a thermosetting resin composition, conductive particles, and white needle-like inorganic particles that are light-reflective insulating particles are dispersed and mixed together with a solvent such as toluene. Then, it may be applied to the peeled PET film so as to have a desired thickness and dried at a temperature of about 80 ° C.
  • Polyimide resin film Upilex-25S, Ube Industries, Ltd.
  • Polyester resin film Teijin Tetron Film, Teijin Limited
  • Polyvinyl chloride resin film Epilon CB3005, Taihei Chemicals Co., Ltd.
  • Polyolefin resin film SAN8041, TECJAM fluoropolymer film (polytetrafluoroethylene): Niftron, Nitto Denko Corporation Silicone: KE-1281, X-32-2020, Shin-Etsu Silicone Co., Ltd. Silicone: XE13-1822, MOMENTIVE dimethyl silicone: KER-2600, Shin-Etsu Silicone Co., Ltd. Dimethyl silicone: KER-2500, Shin-Etsu Silicone Co., Ltd.
  • Thermosetting resin composition comprising white needle-like inorganic particles and conductive particles (particle size 5 ⁇ m) whose surface of a spherical resin is gold-plated, and an epoxy curing adhesive (adhesive binder mainly composed of CEL2021P-MeHHPA) To produce a light-reflective anisotropic conductive adhesive.
  • the amount of white needle-like inorganic particles added was 12.0% by volume with respect to the thermosetting resin composition.
  • titanium dioxide (TiO 2 ) whiskers having a long direction particle size of 1.7 ⁇ m and a short direction particle size of 0.13 ⁇ m (aspect ratio of 13.1) were used. Moreover, the addition amount of electroconductive particle was 10 mass% with respect to the thermosetting resin composition.
  • a buffer film for multichip mounting of Example or Comparative Example is arranged between the temporarily stuck LED chip element and the heating / pressurizing head, and 200 A multi-chip module was obtained by performing main heating and pressing at 30 ° C. for 30 seconds.
  • connection resistance of the multichip module immediately after it was obtained was measured using a curve tracer (TCT-2004, Kuniyo Denki Kogyo Co., Ltd.). The obtained results are shown in Table 1.
  • TCT thermal cycle test
  • connection resistance was again It was measured. The obtained results are shown in Table 1.
  • the multichip module manufactured using the multichip mounting buffer films of Examples 1 to 6 has no observed LED chip misalignment, and has good connection reliability at the initial stage and after the TCT1000 cycle. Met. In particular, Example 1 showed better results than the other Examples.
  • the multichip module manufactured using the multichip mounting buffer film of Comparative Example 2 had no LED chip misalignment observed, but had a problem in connection reliability because the flexible resin layer was relatively hard. It was.
  • the buffer film for multichip mounting of the present invention has a predetermined shore to be disposed on the bonding head side on a heat resistant resin layer that does not exceed a predetermined linear expansion coefficient and is relatively difficult to deform. It has the structure which laminated

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

 マルチチップ実装する際に、アライメントずれを生じさせることなく、良好な接続信頼性を確保できるマルチチップ実装用緩衝フィルムは、80ppm/℃以下の線膨張係数を有する耐熱性樹脂層と、JIS-K6253によるショアA硬度が10~80である樹脂材料から形成された柔軟性樹脂層とが積層された構造を有する。マルチチップモジュールは、複数のチップ素子を、接着剤を介して基板にアライメントし、仮貼りした後、チップ素子とボンディングヘッドとの間に、マルチチップ実装用緩衝フィルムを、その耐熱性樹脂層がチップ素子側になるように配置し、複数のチップ素子をボンディングヘッドで基板に対し加熱加圧して接続することにより製造できる。

Description

マルチチップ実装用緩衝フィルム
 本発明は、マルチチップ実装用緩衝フィルム、及びそれを用いてマルチチップモジュールを製造する方法に関する。
 従来より、基板に複数のLED素子などのチップ素子を、絶縁性接着剤や異方導電性接着剤を介してボンディングヘッドで加熱加圧して一括的に接続することが行われていた。ところが、チップ素子間の高さの相違ないしバラツキや、チップ素子や基板に形成される配線厚やバンプ高さの相違ないしはバラツキのために、チップ素子毎に印加される熱と圧力とが相違してしまい、結果的に十分に加熱加圧されないチップ素子や過度に加熱加圧されてしまうチップ素子が生ずるおそれがあった。前者については接続不良が生じるおそれがあり、後者についてはチップ素子の破損等が生ずるおそれがあった。
 このため、ボンディングヘッドでの接続操作の際に、チップ素子間の高さの相違ないしバラツキ等をキャンセルするために、基板とボンディングヘッドとの間に緩衝材として耐熱性ゴム状弾性体を配置し、耐熱性ゴム状弾性体を介してチップ素子を基板に加熱加圧することが提案されている。
特開平10-256311号公報
 しかしながら、特許文献1に開示のようにゴム状弾性体を緩衝層として使用した場合、それぞれのチップ素子の接続強度は良好であるものの、加熱加圧ヘッドにより緩衝層が基板平面方向に押し拡がるように変形し、その変形に伴ってチップ素子のアライメントずれが生じ、場合により接続信頼性が低下するという問題があった。
 本発明の目的は、以上の従来の問題点を解決しようとするものであり、マルチチップ実装の際に、アライメントずれを生じさせることなく、良好な接続信頼性を確保できるようにすることである。
 本発明者らは、マルチチップ実装の際に使用すべき緩衝材として、チップ素子側に配されるべき耐熱性樹脂層であって、所定の線膨張係数を超えない比較的変形しにくい耐熱性樹脂層と、ボンディングヘッド側に配されるべき柔軟性樹脂層であって、所定のショアA硬度を示す材料からなる比較的変形し易い柔軟性樹脂とを積層した構造のものを使用することにより、上述の目的を達成できることを見出し、本発明を完成させるに至った。
 即ち、本発明は、耐熱性樹脂層と、その上に形成された柔軟性樹脂層とを有するマルチチップ実装用緩衝フィルムであって、耐熱性樹脂層が80ppm/℃以下の線膨張係数を有し、柔軟性樹脂層が、JIS-K6253によるショアA硬度が10~80である樹脂材料から形成されたものであるマルチチップ実装用緩衝フィルムを提供する。
 また、本発明は、基板上に複数のチップ素子を接着剤を介してボンディングヘッドにより加熱加圧することによりマルチチップ実装してなるマルチチップモジュールの製造方法において、以下の工程(A)~(C):
 工程(A)
 複数のチップ素子を、接着剤を介して基板にアライメントし、仮貼りする工程;
 工程(B)
 チップ素子とボンディングヘッドとの間に、上述のマルチチップ実装用緩衝フィルムを、その耐熱性樹脂層がチップ素子側になるように配置する工程;
 工程(C)
 マルチチップ実装用緩衝フィルムを介して、複数のチップ素子をボンディングヘッドで基板に対し加熱加圧することにより基板に接続する工程
を有する製造方法を提供する。
 本発明のマルチチップ実装用緩衝フィルムは、チップ素子側に配されるべき耐熱性樹脂層であって、所定の線膨張係数を超えない比較的変形しにくい耐熱性樹脂層に、ボンディングヘッド側に配されるべき柔軟性樹脂層であって、所定のショアA硬度を示す材料からなる比較的変形し易い柔軟性樹脂を積層した構造を有する。このため、マルチチップ実装において、ボンディングヘッドにより緩衝フィルムを加熱加圧した際、チップ素子に接している耐熱性樹脂層は変形し難いので、結果的にチップ素子のアライメントずれを抑制することが可能となる。他方、ボンディングヘッドに接している柔軟性樹脂層は変形しやすいので、チップ素子の高さの相違やバラツキ等をキャンセルし、複数のチップ素子のそれぞれに対し良好な加熱加圧を行い、良好な接続信頼性を確保することができる。
図1は、本発明のマルチチップ実装用緩衝フィルムの概略断面図である。 図2は、本発明のマルチチップモジュール製造方法の説明図である。 図3は、枚葉でマルチチップ実装用緩衝フィルムを適用した本発明のマルチチップモジュール製造方法の説明図である。 図4は、ロールツーロールでマルチチップ実装用緩衝フィルムを適用した本発明のマルチチップモジュール製造方法の説明図である。 図5は、本発明のマルチチップモジュール製造方法の説明図である。 図6は、本発明のマルチチップモジュール製造方法により得られたマルチチップモジュールの概略断面図である。 光反射性異方性導電接着剤に使用する光反射性導電粒子の概略断面図である。 光反射性異方性導電接着剤に使用する光反射性導電粒子の概略断面図である。
 以下、本発明を図面を参照しながら詳細に説明する。
 図1は、耐熱性樹脂層1と、その上に形成された柔軟性樹脂層2とを有するマルチチップ実装用緩衝フィルム10の断面図である。
 本発明のマルチチップ実装用緩衝フィルム10を構成する耐熱性樹脂層1は、マルチチップ実装の際に、チップ素子側に配されるものであり、アライメントずれを効果的に抑制するために、ガラス転移温度以下の温度領域で80ppm/℃以下、好ましくは20~50ppm/℃の線膨張係数を有する。なお、線膨張係数の好ましい範囲の下限以上であれば、チップ素子等の高さ相違ないしバラツキを十分にキャンセルすることができる。また、線膨張係数の好ましい範囲の上限以下であれば、よりアライメントずれを抑制することができる。
 このような耐熱性樹脂層1としては、ポリイミド樹脂フィルム(例えば、宇部興産(株)のユーピレックス-25S等)、ポリエステル樹脂フィルム(例えば、帝人(株)のテイジンテトロンフィルム等)、ポリ塩化ビニル樹脂フィルム(例えば、太平化学製品(株)のエピロンCB3005)等、ポリオレフィン樹脂フィルム((株)テックジャムのSAN8041等)又はフッ素樹脂フィルム(日東電工(株)のニフトロン(ポリテトラフルオロエチレン))等を挙げることができる。
 耐熱性樹脂層1の層厚としては、厚すぎるとチップ素子等の高さ相違ないしバラツキを十分にキャンセルすることができないので、好ましくは200μm以下、より好ましくは10~50μmである。なお、この層厚の好ましい範囲の下限以上であれば、よりアライメントずれを効果的に抑制することができ、好ましい範囲の上限以下であれば、チップ素子等の高さ相違ないしバラツキを十分にキャンセルすることができる。
 本発明のマルチチップ実装用緩衝フィルム10を構成する柔軟性樹脂層2は、マルチチップ実装の際に、ボンディングヘッド側に配されるものであり、JIS-K6253によるショアA硬度が10~80、好ましくは40~75の樹脂材料から形成されたものである。ショアA硬度がこの範囲であれば、チップ素子等の高さ相違ないしバラツキを十分にキャンセルすることができる。
 このような樹脂材料としては、シリコーン樹脂材料が好ましくは挙げられる。より好ましくは、アニオンリビング重合性のシリコーン樹脂組成物が挙げられる。具体的には、シリコーン(信越シリコーン(株)のKE-1281、X-32-2020、MOMENTIVE社のXE13-C1822等)、ジメチルシリコーン(信越シリコーン(株)のKER-2600、KER-2500等)が挙げられる。
 柔軟性樹脂層2の層厚としては、薄すぎるとチップ素子等の高さ相違ないしバラツキを十分にキャンセルすることができず、良好な接続信頼性が得られないので、好ましくは10μm以上、より好ましくは40~60μmである。なお、この層厚の好ましい範囲の下限以上であれば、チップ素子等の高さ相違ないしバラツキをより十分にキャンセルすることができ、好ましい範囲の上限以下であれば、良好な接続信頼性を確保することが可能になる。
 以上説明したマルチチップ実装用緩衝フィルム10は、本発明の効果を損なわない範囲で、耐熱性樹脂層1と柔軟性樹脂層2との間に別の樹脂層を設けてもよい。
 本発明のマルチチップ実装用緩衝フィルム10は、フィルム状の耐熱性樹脂層1に、柔軟性樹脂層2を形成するための樹脂材料を常法に従って塗布し、乾燥(もしくは重合)することにより製造することができる。
 次に、本発明のマルチチップ実装用緩衝フィルム10は、基板上に複数のチップ素子を接着剤を介してボンディングヘッドを用いて加熱加圧することによりマルチチップ実装してなるマルチチップモジュールの製造方法に好ましく適用することができる。このマルチチップモジュールの製造方法は、以下の工程(A)~(C)を有する。
<工程(A)>
 まず、チップ素子を、接着剤を介して基板にアライメントし、仮貼りする。具体的には、図2に示すように、ステンレススチール等からなる公知の熱圧着用のステージ21上に配線22とバンプ23とが形成された基板24を配置し、接着剤25を介してチップ素子26をフリップチップ方式でアライメントし、仮貼りする。チップ素子26のアライメント操作並びに仮貼り操作自体については、特に制限はなく、従来のマルチチップモジュールの製造方法におけるアライメント操作並びに仮貼り操作を適用することができる。
 本発明の製造方法に適用可能なチップ素子26としては、IC素子、LED(発光ダイオード)素子等をあげることができる。
 また、配線22とバンプ23とが形成された基板24としては、各種金属材料やITO等の透明電極材料等から、プリント法、ドライメッキ法、ウェットメッキ法、フォトリソ法等により形成された配線と、蒸着法、めっき法、印刷法、ボンダー法(スタッドバンプ)等により形成された金バンプ、ハンダバンプ等のバンプとを有するガラス基板、プラスチック基板、セラミック基板等を挙げることができる。
 接着剤25としては、公知の絶縁性接着ペースト(NCP)やフィルム(NCF)、異方性導電ペースト(ACP)やフィルム(ACF)を使用することができる。特に、チップ素子26がLED素子である場合、接着剤25として、生産性等の点から異方性導電接着剤(ACP、ACF)を使用することが好ましく、特に異方性導電接着剤自体が光反射性を示すことが、光の取り出し効率を向上させる点から好ましい。このような光反射性を有する異方性導電接着剤には光反射性針状絶縁粒子を含有させることが好ましい。その詳細については、工程(C)の説明の後で、改めて説明する。
<工程(B)>
 次に、図3に示すように、チップ素子26と、好ましくは金属圧着面を有し、ヒーターを備えたボンディングヘッド27との間に、本発明のマルチチップ実装用緩衝フィルム10を配置する。この場合、マルチチップ実装用緩衝フィルム10の耐熱性樹脂層1がチップ素子26側になるようにする。
 ここで、マルチチップ実装用緩衝フィルム10は、図3に示すように、枚葉で適用してもよいが、図4に示すように、ロールツーロールで適用することが好ましい。ロールツーロールであれば、マルチチップ実装用緩衝フィルム10の交換操作が容易になり、生産性を向上させることができる。
<工程(C)>
 次に、図5に示すように、マルチチップ実装用緩衝フィルム10を介して、複数のチップ素子26をボンディングヘッド27で基板24に対し加熱加圧する。加熱加圧終了後に、図6に示すマルチチップモジュール50を得ることができる。
 前述したように、接着剤25として好ましく適用できる光反射性を有する異方性導電接着剤について詳細に説明する。
 チップ素子がLED素子である場合に好ましく適用できる接着剤は、光反射性異方性導電接着剤であり、熱硬化性樹脂組成物と、導電粒子と、アスペクト比が所定範囲の光反射性針状絶縁粒子とを含有するものである。光反射性絶縁粒子として針状のものを使用することにより、異方性導電接着剤におけるクラックの発生を防止して高い接続信頼性を得ることができる。
 なお、熱硬化性樹脂組成物が球状粒子を含有する場合、温度変化に伴い樹脂組成物の伸縮性が低下する(硬くなる)と、熱硬化性樹脂組成物(ないしその硬化物)の内部応力によって球状粒子と熱硬化性樹脂組成物との界面にクラックが発生し易くなる。光反射性異方性導電接着剤にクラックが生じると、接続信頼性を損なうことになる。そのため、光反射性異方性導電接着剤は優れた強靭性を有することが必要となるが、前述したように、アスペクト比が所定範囲の針状の光反射性絶縁粒子を熱硬化性樹脂組成物に添加することにより異方性導電接着剤に高い強靭性を付与することができる。これは、熱硬化性樹脂組成物中において、それぞれランダムな方向に配置される針状の光反射性絶縁粒子が、それ自体が撓み易くしかもベンディングし易いために、温度変化に伴う熱硬化性樹脂組成物の内部応力を針状結晶中に伝搬及び吸収させることができ、熱硬化性樹脂組成物にこの内部応力が伝わるのを抑制することができるためである。よって、光反射性針状絶縁粒子を含有する光反射性異方性導電接着剤は、優れた強靭性を発揮して、温度変化によって熱硬化性樹脂組成物が伸縮してもクラックの発生や接着面の剥離を抑制することができる。
 このような光反射性針状絶縁粒子は、好ましくは白色を呈する針状無機化合物からなるものであり、光反射性異方性導電接着剤に入射した光を外部に反射する。光反射性針状絶縁粒子自体が白色を呈することにより、可視光に対する反射特性の波長依存性を小さくすることができ、可視光を効率的に反射することができる。
 このような光反射性異方性導電接着剤は、白色を呈するとともにアスペクト比が所定範囲の針状形状を有する無機化合物からなる粒子(以下、これを「白色針状無機粒子」という。)を含有することにより、発光素子から出射された光に対する反射率の低減を抑制して発光素子の発光効率を維持するとともに、クラック等を防止して高い接続信頼性を得ることができる。
 白色針状無機粒子としては、例えば酸化亜鉛ウィスカ、酸化チタンウィスカ、チタン酸カリウムウィスカ、チタン酸ウィスカ等のチタン酸塩ウィスカ、ホウ酸アルミニウムウィスカ、ウォラストナイト(カオリンシリケートの針状結晶)等の針状形状の無機化合物を挙げることができる。ウィスカは、特殊な製法によって針状に成長した結晶であり、結晶構造に乱れがないため弾力性に富み、変形しにくいという利点を有する。これらの無機化合物は、可視光領域では白色を呈するため、可視光に対する反射特性の波長依存性が小さく、且つ可視光を反射しやすい。中でも、酸化亜鉛ウィスカは、白色度が高く、且つ、硬化した異方性導電接着剤における熱硬化性樹脂組成物の硬化物の光劣化が懸念される場合であっても光劣化に対して触媒性がないことから、特に好ましい。
 白色針状無機粒子は、一本の針状形状を有する結晶(単針状結晶)からなる場合には、その繊維径(短方向粒径)は、5μm以下が好ましい。また、単針状結晶からなる白色針状無機粒子のアスペクト比は、10よりも大きく35未満が好ましく、10よりも大きく20未満が特に好ましい。白色針状無機粒子のアスペクト比が10よりも大きい場合には、熱硬化性樹脂組成物の内部応力を十分に伝搬及び吸収させることができる。また、白色針状無機粒子のアスペクト比が35未満である場合には、針状の結晶が折れにくくなるとともに、熱硬化性樹脂組成物中へ均一に分散することができる。このアスペクト比が20未満である場合には、熱硬化性樹脂組成物中への分散性をさらに向上させることができる。
 このように、アスペクト比が10よりも大きく35未満の白色針状無機粒子を熱硬化性樹脂組成物に添加することにより、熱硬化性樹脂組成物の強靭性を高めることができるため、光反射性異方性導電接着剤が伸縮しても接着面の剥離やクラックが発生することを抑制することができる。
 なお、白色針状無機粒子としては、このような単針状結晶であるものに代えて、例えばテトラポッド(登録商標)のような四面体の中心部と頂点とをそれぞれ結合してなる形状等の、複数本の針状形状を有する結晶(複針状結晶)を使用するようにしてもよい。複針状結晶の白色針状無機粒子は、単針状結晶の白色針状無機粒子に比べて熱伝導性が大きい点で優れているが、単針状結晶よりも、かさ高い結晶構造であるため、熱圧着時に針状部分によって基板や素子の接合部品を傷付けないように注意する必要がある。
 また、針状白色無機粒子は、例えばシランカップリング剤で処理したものであってもよい。針状白色無機粒子がシランカップリング剤で処理されていることにより、熱硬化性樹脂組成物中での分散性を向上させることができる。このため、シランカップリング剤で処理した針状白色無機粒子を短時間に均一に熱硬化性樹脂組成物中に混合させることができる。
 白色針状無機粒子は、その屈折率(JIS K7142)が、好ましくは熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きいこと、より好ましくは少なくとも0.02程度大きいことが好ましい。屈折率の差が小さいと、それらの界面での反射効率が低下するからである。すなわち、白色針状無機粒子としては、光反射性且つ絶縁性を有する無機粒子であっても、SiOのように、その屈折率が使用する熱硬化性樹脂組成物の屈折率以下であるものは適用できない。
 白色針状無機粒子の光反射性異方性導電接着剤中の配合量は、少なすぎると十分な光反射を実現できなくなる傾向があり、他方、多すぎると熱硬化性樹脂組成物の接着性が低下する傾向があるため、熱硬化性樹脂組成物に対し、1~50体積%(Vol%)であることが好ましく、5~25体積%であることが特に好ましい。
 本発明の製造方法に適用できる光反射性異方性導電接着剤は、このような白色針状無機粒子を含有することで、導電粒子の大部分を覆うため、導電粒子が茶色等の色を呈する場合であっても、熱硬化性樹脂組成物の白色性を実現する。このような白色性により、可視光に対する反射特性の波長依存性を小さくし、且つ可視光を反射しやすくなるため、基板電極の色の種類に関係なく、LED素子から出射される光の反射率の低下を抑制するとともに、LED素子がその下面側に向けて発光する光も効率的に利用することができる。その結果、LED素子の発光効率(光取り出し効率)を向上させることができる。
 なお、以上説明した光反射性異方性導電接着剤は、白色針状無機粒子に加えて、白色を呈する球状形状の絶縁粒子として、白色を呈する球状形状の無機化合物からなる粒子(以下、これを「白色球状無機粒子」という。)を添加してもよい。白色針状無機粒子とともに白色球状無機粒子を添加することで、熱硬化性樹脂組成物をさらに白色化してLED素子の光取り出し効率をより向上させることができる。また、この場合においても、熱硬化性樹脂組成物の強靭性を高めることができる。ここで、白色針状無機粒子の添加量(Vol%)は、白色球状無機粒子の添加量(Vol%)と同量以上とすることが好ましい。
 光反射性異方性導電接着剤において、白色針状無機粒子とともに白色球状無機粒子が添加されている場合においても、光反射性異方性導電接着剤は、優れた強靭性を発揮することができることにより、伸縮しても接着面の剥離やクラックが発生することを抑制することができる。
 以上説明したような光反射性異方性導電接着剤が含有する導電粒子としては、異方性導電接続用の従来の導電粒子において使用されている金属材料の粒子を使用することができる。すなわち、導電粒子の金属材料としては、例えば金、ニッケル、銅、銀、半田、パラジウム、アルミニウム、それらの合金、それらの多層化物(例えば、ニッケルメッキ/金フラッシュメッキ物)等を挙げることができる。
 なお、金、ニッケル或いは銅を金属材料とする導電粒子は、茶色を呈することから、本発明の効果を他の金属材料よりも享受することができる。すなわち、上述したように、熱硬化性樹脂組成物中において、白色針状無機粒子が導電粒子の大部分を覆うため、導電粒子に起因して熱硬化性樹脂組成物が茶色を呈するのを抑制し、熱硬化性樹脂組成物全体が高い白色性を呈するようになる。
 また、導電粒子としては、樹脂粒子を金属材料で被覆した金属被覆樹脂粒子を使用してもよい。このような樹脂粒子としては、スチレン系樹脂粒子、ベンゾグアナミン樹脂粒子、ナイロン樹脂粒子等を挙げることができる。樹脂粒子を金属材料で被覆する方法としては、従来公知の方法を採用することができ、例えば無電解メッキ法、電解メッキ法等を利用することができる。また、被覆する金属材料の層厚は、良好な接続信頼性を確保できる厚さであればよく、樹脂粒子の粒径や金属の種類にもよるが、通常、0.1~3μmである。
 また、樹脂粒子の粒径は、小さすぎると接続不良が生じ、大きすぎるとパターン間ショートが生じる傾向にあるので、1~20μmが好ましく、3~10μmがより好ましく、さらには3~5μmが特に好ましい。この場合、樹脂粒子の形状としては球形が好ましいが、フレーク状、ラクビーボール状であってもよい。
 金属被覆樹脂粒子は、球状形状であり、その粒径は、大きすぎると接続信頼性が低下する傾向があるため、1~20μmが好ましく、3~10μmがより好ましい。
 なお、以上説明したような光反射性異方性導電接着剤が含有する導電粒子は、例えば図7A、図7Bの断面図に示されるような、光反射性を付与した光反射性導電粒子とすることも可能である。
 図7Aに示す光反射性導電粒子100は、金属材料で被覆されているコア粒子110と、その表面に酸化チタン(TiO)粒子、酸化亜鉛(ZnO)粒子又は酸化アルミニウム(Al)粒子から選択された少なくとも一種の無機粒子120から形成される光反射層130とから構成される。このような無機粒子120から形成された光反射層130は、白色から灰色の範囲にある色を呈する。このため、上述したように、可視光に対する反射特性の波長依存性が小さく、且つ可視光を反射しやすくなり、LED素子の発光効率をより向上させることができる。
 なお、酸化チタン粒子、酸化亜鉛粒子又は酸化アルミニウム粒子のうち、硬化した光反射性異方性導電接着剤の熱硬化性樹脂組成物の硬化物の光劣化が懸念される場合には、上述したように、光劣化に対して触媒性がなく、屈折率も高い酸化亜鉛を好ましく使用することができる。
 コア粒子110は、異方性導電接続に供するものであり、表面が金属材料で構成されている。コア粒子110の態様としては、例えばコア粒子110そのものが金属材料である態様、又は樹脂粒子の表面が金属材料で被覆された態様を挙げることができる。
 無機粒子120から形成された光反射層130の層厚は、コア粒子110の粒径との相対的大きさの観点からみると、コア粒子110の粒径に対して小さすぎると反射率の低下が著しくなり、大きすぎると接続不良が生じる。このため、光反射層130の層厚は、0.5~50%が好ましく、1~25%がより好ましい。
 また、光反射性導電粒子100において、光反射層130を構成する無機粒子120の粒径は、小さすぎると光反射現象が生じ難くなり、大きすぎると光反射層の形成が困難となる傾向がある。このため、無機粒子120の粒径は、好ましくは0.02~4μm、より好ましくは0.1~1μm、特に好ましくは0.2~0.5μmである。この場合、光反射させる光の波長の観点からみると、無機粒子120の粒径は、反射させるべき光(すなわち、発光素子が発する光)が透過してしまわないように、その光の波長の50%以上であることが好ましい。この場合、無機粒子120の形状としては無定型、球状、鱗片状、針状等を挙げることができるが、中でも、光拡散効果の点から球状、全反射効果の点から鱗片状の形状が好ましい。
 光反射性導電粒子100は、大小の粉末同士を物理的に衝突させることにより大粒径粒子の表面に小粒子からなる膜を形成させる公知の成膜技術(いわゆるメカノフュージョン法)により製造することができる。この場合、無機粒子120は、コア粒子110の表面の金属材料に食い込むように固定され、他方、無機粒子同士が融着固定されにくいから、無機粒子のモノレイヤが光反射層130を構成する。したがって、図7Aの場合、光反射層130の層厚は、無機粒子120の粒径と同等乃至わずかに薄くなると考えられる。
 図7Bに示す光反射性導電粒子200は、光反射層230が接着剤として機能する熱可塑性樹脂240を含有し、この熱可塑性樹脂240により無機粒子220同士も固定され、無機粒子220が多層化(例えば2層又は3層)している点で、図7Aの光反射性導電粒子100と相違する。このような熱可塑性樹脂240を含有することにより、光反射層230の機械的強度が向上し、無機粒子の剥落等が生じにくくなる。
 熱可塑性樹脂240としては、環境低負荷を意図してハロゲンフリーの熱可塑性樹脂を好ましく使用することができ、例えば、ポリエチレン、ポリプロピレン等のポリオレフィンやポリスチレン、アクリル樹脂等を好ましく使用することができる。
 このような光反射性導電粒子200も、メカフュージョン法により製造することができる。メカフュージョン法に適用する熱可塑性樹脂240の粒子径は、小さすぎると接着機能が低下し、大きすぎるとコア粒子210に付着しにくくなるので、0.02~4μmが好ましく、0.1~1μmがより好ましい。また、このような熱可塑性樹脂240の配合量は、少なすぎると接着機能が低下し、多すぎると粒子の凝集体が形成されるので、無機粒子220の100質量部に対し、0.2~500質量部が好ましく、4~25質量部がより好ましい。
 光反射性異方性導電接着剤に含まれる熱硬化性樹脂組成物としては、なるべく無色透明なものを使用することが好ましい。光反射性異方性導電接着剤中の光反射性導電粒子の光反射効率を低下させず、更には入射光の光色を変えずに反射させるためである。ここで、無色透明とは、光反射性異方性導電接着剤の硬化物が、波長380~780nmの可視光に対して光路長1cmの光透過率(JIS K7105)が80%以上、好ましくは90%以上となることを意味する。
 光反射性異方性導電接着剤において、熱硬化性樹脂組成物100質量部に対する光反射性導電粒子等の導電粒子の配合量は、少なすぎると接続不良が生じ、多すぎるとパターン間ショートが生じる傾向があるので、1~100質量部が好ましく、10~50質量部がより好ましい。
 光反射性異方性導電接着剤は、熱硬化性樹脂組成物に白色針状無機粒子を加えることで、波長450nmの光に対する反射率(JIS K7105)が、9%よりも高い値となる。光反射性異方性導電接着剤の反射特性は、その他の様々な因子、例えば光反射性導電粒子の反射特性や配合量、熱硬化性樹脂組成物の配合組成等を適宜調整することで、波長450nmの光に対する反射率(JIS K7105)で、30%以上を実現する。通常、反射特性の良好な光反射性導電粒子の配合量を増量すれば、反射率も増大する傾向がある。
 また、光反射性異方性導電接着剤の反射特性は屈折率という観点から評価することもできる。すなわち、その硬化物の反射率が、導電粒子と光反射性絶縁粒子とを除いた熱硬化性樹脂組成物の硬化物の屈折率よりも大きいと、光反射性絶縁粒子とそれを取り巻く熱硬化性樹脂組成物の硬化物との界面での光反射量が増大するからである。具体的には、光反射性絶縁粒子の屈折率(JIS K7142)から、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)を差し引いた差が、好ましくは0.02以上、より好ましくは0.2以上であることが望まれる。なお、通常、エポキシ樹脂を主体とする熱硬化性樹脂組成物の屈折率は、約1.5である。
 熱硬化性樹脂組成物としては、従来の異方性導電接着剤において使用されているものを利用することができる。一般に、このような熱硬化性樹脂組成物は、絶縁性バインダ樹脂に硬化剤を配合したものである。絶縁性バインダ樹脂としては、脂環式エポキシ化合物や複素環系エポキシ化合物や水素添加エポキシ化合物等を主成分としたエポキシ系樹脂が好ましく挙げられる。
 脂環式エポキシ化合物としては、分子内に2つ以上のエポキシ基を有するものが好ましく挙げられる。これらは、液状であっても固体状であってもよい。具体的には、グリシジルヘキサヒドロビスフェノール、エポキシシクロヘキセニルメチル-エポキシシクロヘキセンカルボキシレート等を挙げることができる。中でも、硬化物にLED素子の実装等に適した光透過性を確保でき、速硬化性にも優れている点から、グリシジルヘキサビドロビスフェノールA、3,4-エポキシシクロヘキセニルメチル-3’,4’-エポキシシクロヘキセンカルボキシレートを好ましく使用することができる。
 複素環系エポキシ化合物としては、トリアジン環を有するエポキシ化合物を挙げることができ、特に好ましくは1,3,5-トリス(2,3-エポキシプロピル)-1,3,5-トリアジン-2,4,6-(1H,3H,5H)-トリオンを挙げることができる。
 水素添加エポキシ化合物としては、先述の脂環式エポキシ化合物や複素環系エポキシ化合物の水素添加物や、その他公知の水素添加エポキシ樹脂を使用することができる。
 脂環式エポキシ化合物や複素環系エポキシ化合物や水素添加エポキシ化合物は、単独で使用してもよいが、2種以上を併用することができる。また、これらのエポキシ化合物に加えて本発明の効果を損なわない限り、他のエポキシ化合物を併用してもよい。例えば、ビスフェノールA、ビスフェノールF、ビスフェノールS、テトラメチルビスフェノールA、ジアリールビスフェノールA、ハイドロキノン、カテコール、レゾルシン、クレゾール、テトラブロモビスフェノールA、トリヒドロキシビフェニル、ベンゾフェノン、ビスレゾルシノール、ビスフェノールヘキサフルオロアセトン、テトラメチルビスフェノールA、テトラメチルビスフェノールF、トリス(ヒドロキシフェニル)メタン、ビキシレノール、フェノールノボラック、クレゾールノボラック等の多価フェノールとエピクロルヒドリンとを反応させて得られるグリシジルエーテル;グリセリン、ネオペンチルグリコール、エチレングリコール、プロピレングリコール、ヘキシレングリコール、ポリエチレングリコール、ポリプロピレングリコール等の脂肪族多価アルコールとエピクロルヒドリンとを反応させて得られるポリグリシジルエーテル;p-オキシ安息香酸、β-オキシナフトエ酸のようなヒドロキシカルボン酸とエピクロルヒドリンとを反応させて得られるグリシジルエーテルエステル;フタル酸、メチルフタル酸、イソフタル酸、テレフタル酸、テトラハイドロフタル酸、エンドメチレンテトラハイドロフタル酸、エンドメチレンヘキサハイドロフタル酸、トリメット酸、重合脂肪酸のようなポリカルボン酸から得られるポリグリシジルエステル;アミノフェノール、アミノアルキルフェノールから得られるグリシジルアミノグリシジルエーテル;アミノ安息香酸から得られるグリシジルアミノグリシジルエステル;アニリン、トルイジン、トリブロムアニリン、キシリレンジアミン、ジアミノシクロヘキサン、ビスアミノメチルシクロヘキサン、4,4’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルスルホン等から得られるグリシジルアミン;エポキシ化ポリオレフィン等の公知のエポキシ樹脂類が挙げられる。
 硬化剤としては、酸無水物、イミダゾール化合物、ジシアン等を挙げることができる。中でも、硬化物を変色させ難い酸無水物、特に脂環式酸無水物系硬化剤を好ましく使用できる。具体的には、メチルヘキサヒドロフタル酸無水物等を好ましく挙げることができる。
 熱硬化性樹脂組成物において、脂環式エポキシ化合物と脂環式酸無水物系硬化剤とを使用する場合、それぞれの使用量は、脂環式酸無水物系硬化剤が少なすぎると未硬化エポキシ化合物が多くなり、多すぎると余剰の硬化剤の影響で被着体材料の腐食が促進される傾向があるので、脂環式エポキシ化合物100質量部に対し、脂環式酸無水物系硬化剤を、好ましくは80~120質量部、より好ましくは95~105質量部の割合で使用する。
 光反射性異方性導電接着剤は、熱硬化性樹脂組成物と、導電粒子と、光反射性絶縁粒子である白色針状無機粒子とを均一に混合することにより製造することができる。また、光反射性異方性導電フィルムとする場合には、熱硬化性樹脂組成物と、導電粒子と、光反射性絶縁粒子である白色針状無機粒子とをトルエン等の溶媒とともに分散混合し、剥離処理したPETフィルムに所期の厚さとなるように塗布し、約80℃程度の温度で乾燥すればよい。
 以下、本発明を実施例により具体的に説明する。
<実施例1~6、比較例1~4>
(マルチチップ実装用緩衝フィルムの作製)
 表1に示す耐熱性樹脂フィルム(耐熱性樹脂層)に、表1のシリコーン系樹脂組成物をスクリーン印刷法により塗布し、120℃で1時間乾燥させて柔軟性樹脂層を形成することにより、マルチチップ実装用緩衝フィルムを作製した。
 なお、耐熱性樹脂フィルム並びにシリコーン系樹脂組成物としては以下の材料を使用した。
ポリイミド樹脂フィルム: ユーピレックス-25S、宇部興産(株)
ポリエステル樹脂フィルム: テイジンテトロンフィルム、帝人(株)
ポリ塩化ビニル樹脂フィルム: エピロンCB3005、太平化学製品(株)
ポリオレフィン樹脂フィルム: SAN8041、(株)テックジャム
フッ素樹脂フィルム(ポリテトラフルオロエチレン):ニフトロン、日東電工(株)
シリコーン: KE-1281、X-32-2020、信越シリコーン(株)
シリコーン: XE13-1822、MOMENTIVE社
ジメチルシリコーン: KER-2600、信越シリコーン(株)
ジメチルシリコーン: KER-2500、信越シリコーン(株)
 作製したマルチチップ実装用緩衝フィルムと、以下に説明する光反射性異方性導電接着剤とを使用し、回路基板に複数のLED素子をフリップチップ方式で一括にマルチチップ実装し、得られたマルチチップモジュールについて「接続信頼性」と「アライメントずれ」とについて試験評価した。得られた評価結果を表1に示す。
<光反射性異方性導電接着剤の調製>
 白色針状無機粒子と、球状樹脂の表面を金メッキ処理した導電粒子(粒径5μm)とをエポキシ硬化系接着剤(CEL2021P-MeHHPAを主成分とした接着性バインダ)からなる熱硬化性樹脂組成物に混合し、光反射性異方性導電接着剤を作製した。白色針状無機粒子の添加量は、熱硬化性樹脂組成物に対して12.0体積%とした。白色針状無機粒子としては、長方向粒径1.7μm、短方向粒径0.13μm(アスペクト比13.1)の二酸化チタン(TiO)ウィスカを使用した。また、導電粒子の添加量は、熱硬化性樹脂組成物に対して10質量%とした。
<マルチチップモジュールの作製>
 100μmピッチの銅配線にNi/Au(5.0μm厚/0.3μm厚)メッキ処理した配線を有し、20個のLED素子を実装可能なガラスエポキシ基板に、バンプホルダ(FB700、カイジョー(株))を用いて10μm高の金(Au)バンプを形成した。この金バンプ付きガラスエポキシ基板に、前述の異方性導電接着剤を15μm厚となるように塗布し、その上に0.3mm角のLEDチップ素子20個を搭載し、仮貼りした。金属製の加熱加圧ヘッドを備えたフリップチップボンダーを用いて、この仮貼りしたLEDチップ素子と加熱加圧ヘッドとの間に実施例又は比較例のマルチチップ実装用緩衝フィルムを配し、200℃で30秒間、本加熱加圧することによりマルチチップモジュールを得た。
<接続信頼性評価>
 まず、得られた直後のマルチチップモジュールの接続抵抗をカーブトレーサー(TCT-2004、國洋電機工業(株))を用いて測定した。得られた結果を表1に示す。次に、マルチチップモジュールを冷熱サイクル試験(TCT:-40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを500サイクル又は1000サイクル実施)後、再度、接続抵抗を測定した。得られた結果を表1に示す。
 なお、接続信頼性の評価は、If=20mA時のVf値を測定し、以下の基準で評価した。なお、実装時のチップ破損などで短絡(リーク)が確認された場合には「*」で示し、また、オープン(接続不能)の場合を「-」で示した。
 ランク 基準
 AA: 初期Vf値からのVf値の上昇分が±0.05V未満
  A: 初期Vf値からのVf値の上昇分が±0.05V以上±0.07V未満
  B: 初期Vf値からのVf値の上昇分が±0.07V以上±0.1V未満
  C: 初期Vf値からのVf値の上昇分が±0.1V以上
<アライメントずれ評価>
 得られたマルチチップモジュールの外観を顕微鏡を用いて観察し、LEDチップ素子と基板のバンプとの間のずれを観察し、以下の基準で評価した。
 ランク 基準
 AA: LED素子の電極と基板のバンプとの間でずれが全くない場合
  A: LED素子の電極と基板のバンプとの間で一部ずれが観察されたが、実用上問題がない場合
  B: LED素子の電極と基板のバンプとの間でずれが観察されたが、電気的接続は得られている場合
  C: LED素子の電極と基板のバンプとの間で著しくずれが観察され、電気的接続が全くない場合
Figure JPOXMLDOC01-appb-T000001
 表1から、実施例1~6のマルチチップ実装用緩衝フィルムを用いて製造されたマルチチップモジュールは、LEDチップのアライメントずれが観察されず、また、初期及びTCT1000サイクル後の接続信頼性も良好であった。特に、実施例1の場合、他の実施例よりも良好な結果を示した。
 他方、比較例1のマルチチップ実装用緩衝フィルムを用いて製造されたマルチチップモジュールは、LEDチップのアライメントずれが観察されなかったが、柔軟性樹脂層が存在しないため、接続信頼性試験の初期評価でリークが観察され、良好な接続信頼性が得られなかった。
 比較例2のマルチチップ実装用緩衝フィルムを用いて製造されたマルチチップモジュールは、LEDチップのアライメントずれが観察されなかったが、柔軟性樹脂層が比較的硬いため、接続信頼性に問題があった。
 比較例3のマルチチップ実装用緩衝フィルムを用いて製造されたマルチチップモジュールの場合、緩衝フィルムの耐熱性樹脂層が熱収縮してしまい、LEDチップのアライメントずれが観察された。しかも初期接続信頼性は良好であったが、TCT500サイクル後にはVf値が著しく上昇し、更にTCT1000サイクル後にはオープンとなった。
 比較例4のマルチチップ実装用緩衝フィルムを用いて製造されたマルチチップモジュールの場合、緩衝フィルムが歪んでしまい、LEDチップのアライメントが完全にずれてしまった。
 本発明のマルチチップ実装用緩衝フィルムは、チップ素子側に配すべき、所定の線膨張係数を超えない比較的変形しにくい耐熱性樹脂層に、ボンディングヘッド側に配されるべき、所定のショアA硬度を示す材料からなる比較的変形し易い柔軟性樹脂を積層した構成を有する。このため、マルチチップ実装において、ボンディングヘッドにより緩衝フィルムを加熱加圧した際、チップ素子に接している耐熱性樹脂層は変形し難いので、結果的にチップ素子のアライメントずれを抑制することが可能となる。他方、ボンディングヘッドに接している柔軟性樹脂層は変形しやすいので、チップ素子の高さの相違やバラツキをキャンセルし、複数のチップ素子のそれぞれに対し良好な加熱加圧を行い、良好な接続信頼性を確保することができる。よって、基板上に複数のチップ素子を一括実装するマルチチップ実装に有用である。
 1 耐熱性樹脂層
 2 柔軟性樹脂層
 10 マルチチップ実装用緩衝フィルム
 21 ステージ
 22 配線
 23 バンプ
 24 基板
 25 接着剤
 26 チップ素子
 27 ボンディングヘッド
 50 マルチチップモジュール
 100,200 光反射性導電粒子
 100,210 コア粒子
 120,220 無機粒子
 120,230 光反射層
 240 熱可塑性樹脂

Claims (9)

  1.  耐熱性樹脂層と、その上に形成された柔軟性樹脂層とを有するマルチチップ実装用緩衝フィルムであって、耐熱性樹脂層が80ppm/℃以下の線膨張係数を有し、柔軟性樹脂層が、JIS-K6253によるショアA硬度が10~80である樹脂材料から形成されたものであるマルチチップ実装用緩衝フィルム。
  2.  耐熱性樹脂層が、ポリイミド樹脂フィルム、ポリエステル樹脂フィルム、ポリ塩化ビニル樹脂フィルム、ポリオレフィン樹脂フィルム又はフッ素樹脂フィルムである請求項1記載のマルチチップ実装用緩衝フィルム。
  3.  柔軟性樹脂層を構成する樹脂材料が、アニオンリビング重合性のシリコーン樹脂組成物である請求項1又は2記載のマルチチップ実装用緩衝フィルム。
  4.  耐熱性樹脂層の層厚が200μm以下であり、柔軟性樹脂層の層厚が10μm以上である請求項1~3のいずれかに記載のマルチチップ実装用緩衝フィルム。
  5.  基板上に複数のチップ素子を接着剤を介してボンディングヘッドにより加熱加圧することによりマルチチップ実装してなるマルチチップモジュールの製造方法において、以下の工程(A)~(C):
     工程(A)
     複数のチップ素子を、接着剤を介して基板にアライメントし、仮貼りする工程;
     工程(B)
     チップ素子とボンディングヘッドとの間に、請求項1~4のいずれかに記載のマルチチップ実装用緩衝フィルムを、その耐熱性樹脂層がチップ素子側になるように配置する工程;
     工程(C)
     マルチチップ実装用緩衝フィルムを介して、複数のチップ素子をボンディングヘッドで基板に対し加熱加圧することにより接続する工程
    を有する製造方法。
  6.  チップ素子が、LED素子である請求項5記載の製造方法。
  7.  マルチチップ実装用緩衝フィルムが、枚葉で適用される請求項5又は6記載の製造方法。
  8.  マルチチップ実装用緩衝フィルムが、ロールツーロールで適用される請求項5又は6記載の製造方法。
  9.  接着剤が、光反射性針状絶縁粒子を含有する異方性導電接着剤である請求項6~8のいずれかに記載の製造方法。
PCT/JP2011/070691 2010-10-07 2011-09-12 マルチチップ実装用緩衝フィルム WO2012046539A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US13/805,553 US8758546B2 (en) 2010-10-07 2011-09-12 Buffer film for multi-chip packaging
KR1020137008719A KR101853151B1 (ko) 2010-10-07 2011-09-12 멀티칩 실장용 완충 필름
CN201180048307.3A CN103155128B (zh) 2010-10-07 2011-09-12 多芯片安装用缓冲膜
EP11830472.4A EP2626894B1 (en) 2010-10-07 2011-09-12 Buffering film for multichip mounting
HK13112538.9A HK1185182A1 (zh) 2010-10-07 2013-11-07 多芯片安裝用緩衝膜
US14/275,460 US20140248477A1 (en) 2010-10-07 2014-05-12 Buffer film for multi-chip packaging

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010227420A JP5614217B2 (ja) 2010-10-07 2010-10-07 マルチチップ実装用緩衝フィルム
JP2010-227420 2010-10-07

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/805,553 A-371-Of-International US8758546B2 (en) 2010-10-07 2011-09-12 Buffer film for multi-chip packaging
US14/275,460 Division US20140248477A1 (en) 2010-10-07 2014-05-12 Buffer film for multi-chip packaging

Publications (1)

Publication Number Publication Date
WO2012046539A1 true WO2012046539A1 (ja) 2012-04-12

Family

ID=45927536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/070691 WO2012046539A1 (ja) 2010-10-07 2011-09-12 マルチチップ実装用緩衝フィルム

Country Status (8)

Country Link
US (2) US8758546B2 (ja)
EP (1) EP2626894B1 (ja)
JP (1) JP5614217B2 (ja)
KR (1) KR101853151B1 (ja)
CN (1) CN103155128B (ja)
HK (1) HK1185182A1 (ja)
TW (1) TWI511333B (ja)
WO (1) WO2012046539A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017216321A (ja) * 2016-05-31 2017-12-07 デクセリアルズ株式会社 発光装置、及び発光装置の製造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
TWI564106B (zh) * 2011-03-28 2017-01-01 山田尖端科技股份有限公司 接合裝置以及接合方法
JP5965185B2 (ja) * 2012-03-30 2016-08-03 デクセリアルズ株式会社 回路接続材料、及びこれを用いた半導体装置の製造方法
JP5958107B2 (ja) * 2012-06-15 2016-07-27 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
KR101513641B1 (ko) 2013-08-20 2015-04-22 엘지전자 주식회사 표시장치
KR101476688B1 (ko) * 2013-10-24 2014-12-26 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
DE102014114096A1 (de) 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114097B4 (de) * 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102014114095B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Sintervorrichtung
CN105565254B (zh) * 2014-10-17 2017-11-14 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法、电子装置
US9871177B2 (en) * 2015-03-04 2018-01-16 Trillion Science, Inc. Anisotropic conductive film (ACF) including a relfective layer
US10062660B2 (en) 2015-03-04 2018-08-28 Trillion Science, Inc. Anisotropic conductive film including a reflective layer
JP6403873B2 (ja) * 2015-04-03 2018-10-10 三菱電機株式会社 半導体素子の接合方法及び半導体素子接合用シート状積層緩衝材
EP3271953B1 (en) * 2015-05-21 2019-05-01 Goertek Inc. Transferring method and manufacturing method of micro-led
KR102471724B1 (ko) * 2015-08-28 2022-11-25 쇼와덴코머티리얼즈가부시끼가이샤 완충 시트용 조성물 및 완충 시트
JP2017092092A (ja) * 2015-11-04 2017-05-25 豊田合成株式会社 発光装置の製造方法
DE102016106387A1 (de) * 2016-04-07 2017-10-12 Osram Opto Semiconductors Gmbh Lichtemittierendes bauelement
US10340256B2 (en) 2016-09-14 2019-07-02 Innolux Corporation Display devices
JP2019021672A (ja) * 2017-07-12 2019-02-07 日立化成株式会社 半導体デバイスの製造に用いる積層体、及び半導体デバイスの製造方法
JP2019041097A (ja) * 2017-08-28 2019-03-14 日立化成株式会社 電子部品装置を製造する方法、熱プレス用シート及び熱プレス用熱硬化性樹脂組成物
JP7228577B2 (ja) * 2018-04-27 2023-02-24 日東電工株式会社 半導体装置製造方法
JP7180152B2 (ja) * 2018-07-11 2022-11-30 昭和電工マテリアルズ株式会社 電子部品装置を製造する方法、熱プレス用シート及び熱プレス用熱硬化性樹脂組成物
KR20210138263A (ko) 2020-05-12 2021-11-19 삼성전자주식회사 반도체 칩 실장용 테이프 및 상기 테이프를 이용한 반도체 패키지 제조 방법
US11424235B2 (en) * 2020-07-09 2022-08-23 International Business Machines Corporation Interposer-less multi-chip module
KR102484595B1 (ko) * 2020-11-27 2023-01-05 우리테크놀러지 주식회사 Ncp 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법
KR20240112448A (ko) * 2023-01-12 2024-07-19 주식회사 아모그린텍 방열기판 패키지 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256311A (ja) * 1997-03-17 1998-09-25 Hitachi Chem Co Ltd マルチチップ実装法
JP2000133658A (ja) * 1998-10-27 2000-05-12 Matsushita Electric Ind Co Ltd 電子部品の製造方法
WO2010098273A1 (ja) * 2009-02-27 2010-09-02 ソニーケミカル&インフォメーションデバイス株式会社 異方性導電フィルム及び発光装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903697B2 (ja) 1990-11-06 1999-06-07 セイコーエプソン株式会社 半導体装置の製造方法及び半導体装置の製造装置
RU2168525C2 (ru) * 1994-04-28 2001-06-10 Дайкин Индастриз, Лтд Композиция термопластичной смолы
WO2002094558A1 (en) * 2001-05-24 2002-11-28 Toray Industries, Inc. Heat-resistant resin film with metal layer and wiring board, and method for manufacturing them
US20040014401A1 (en) * 2001-08-07 2004-01-22 Chun-Cheng Tsao Method for backside die thinning and polishing of packaged integrated circuits
JP4572056B2 (ja) * 2002-10-04 2010-10-27 信越化学工業株式会社 熱伝導性シリコーンゴム複合シート
JP3921459B2 (ja) * 2003-07-11 2007-05-30 ソニーケミカル&インフォメーションデバイス株式会社 電気部品の実装方法及び実装装置
JP4125668B2 (ja) * 2003-12-19 2008-07-30 日東電工株式会社 半導体装置の製造方法
JP4590253B2 (ja) * 2004-12-16 2010-12-01 東レ・ダウコーニング株式会社 オルガノポリシロキサンおよびシリコーン組成物
JP5103725B2 (ja) * 2005-10-05 2012-12-19 大日本印刷株式会社 低膨張性ポリイミド、樹脂組成物及び物品
JP4996859B2 (ja) * 2006-02-10 2012-08-08 ソニーケミカル&インフォメーションデバイス株式会社 圧着装置
JP2008071859A (ja) * 2006-09-13 2008-03-27 Shin Etsu Chem Co Ltd 微小電子部品の封止方法
JP2006352166A (ja) * 2006-09-22 2006-12-28 Hitachi Chem Co Ltd マルチチップ実装法
CN101689516B (zh) * 2007-06-28 2011-09-14 松下电器产业株式会社 半导体元件的安装构造体的制造方法及加压工具
US20100208189A1 (en) * 2007-10-01 2010-08-19 Momentive Performance Materials Japan Llc Sealing agent for display element
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
CN102047404B (zh) * 2008-12-16 2013-07-10 松下电器产业株式会社 半导体装置和倒装芯片安装方法及倒装芯片安装装置
EP2373708B1 (en) * 2008-12-17 2016-03-09 3M Innovative Properties Company Bulk polymerization of silicone-containing copolymers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256311A (ja) * 1997-03-17 1998-09-25 Hitachi Chem Co Ltd マルチチップ実装法
JP2000133658A (ja) * 1998-10-27 2000-05-12 Matsushita Electric Ind Co Ltd 電子部品の製造方法
WO2010098273A1 (ja) * 2009-02-27 2010-09-02 ソニーケミカル&インフォメーションデバイス株式会社 異方性導電フィルム及び発光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2626894A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017216321A (ja) * 2016-05-31 2017-12-07 デクセリアルズ株式会社 発光装置、及び発光装置の製造方法
WO2017208726A1 (ja) * 2016-05-31 2017-12-07 デクセリアルズ株式会社 発光装置、及び発光装置の製造方法
US10873016B2 (en) 2016-05-31 2020-12-22 Dexerials Corporation Light-emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
EP2626894A1 (en) 2013-08-14
US20140248477A1 (en) 2014-09-04
EP2626894B1 (en) 2017-07-26
KR20130120457A (ko) 2013-11-04
CN103155128B (zh) 2016-02-17
US20130092310A1 (en) 2013-04-18
KR101853151B1 (ko) 2018-04-27
TWI511333B (zh) 2015-12-01
JP5614217B2 (ja) 2014-10-29
EP2626894A4 (en) 2016-03-02
TW201216522A (en) 2012-04-16
JP2012084582A (ja) 2012-04-26
HK1185182A1 (zh) 2014-02-07
US8758546B2 (en) 2014-06-24
CN103155128A (zh) 2013-06-12

Similar Documents

Publication Publication Date Title
JP5614217B2 (ja) マルチチップ実装用緩衝フィルム
TWI553088B (zh) A light reflective anisotropic conductive adhesive and a light emitting device
JP5402804B2 (ja) 発光装置の製造方法
JP5617210B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP6292808B2 (ja) 接着剤、及び発光装置
JP5526698B2 (ja) 光反射性導電粒子、異方性導電接着剤及び発光装置
JP5555038B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP5785306B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP2014030026A (ja) 異方性導電接着剤及び発光装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180048307.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11830472

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13805553

Country of ref document: US

REEP Request for entry into the european phase

Ref document number: 2011830472

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2011830472

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20137008719

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE