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WO2008099863A1 - 半導体，半導体装置及び相補型トランジスタ回路装置 - Google Patents

半導体，半導体装置及び相補型トランジスタ回路装置 Download PDF

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Publication number
WO2008099863A1
WO2008099863A1 PCT/JP2008/052391 JP2008052391W WO2008099863A1 WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1 JP 2008052391 W JP2008052391 W JP 2008052391W WO 2008099863 A1 WO2008099863 A1 WO 2008099863A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
electrode
transistor circuit
complementary transistor
circuit device
Prior art date
Application number
PCT/JP2008/052391
Other languages
English (en)
French (fr)
Inventor
Koki Yano
Hajime Nakanotani
Chihaya Adachi
Original Assignee
Idemitsu Kosan Co., Ltd.
Kyushu University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/806,995 external-priority patent/US8129714B2/en
Application filed by Idemitsu Kosan Co., Ltd., Kyushu University filed Critical Idemitsu Kosan Co., Ltd.
Priority to JP2008558109A priority Critical patent/JP5551366B2/ja
Publication of WO2008099863A1 publication Critical patent/WO2008099863A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

　半導体１と、第一の電極２と、半導体１及び第一の電極２間に設けられた絶縁体層３と、半導体１に接し第一の電極２と離間した第二の電極４と、半導体１に接し第一及び第二の電極２，４と離間した第三の電極５とを備え、半導体１が、有機半導体層１０と酸化物半導体層１１とを備えた。
PCT/JP2008/052391 2007-02-16 2008-02-14 半導体，半導体装置及び相補型トランジスタ回路装置 WO2008099863A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008558109A JP5551366B2 (ja) 2007-02-16 2008-02-14 半導体，半導体装置及び相補型トランジスタ回路装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-036580 2007-02-16
JP2007036580 2007-02-16
US11/806,995 US8129714B2 (en) 2007-02-16 2007-06-05 Semiconductor, semiconductor device, complementary transistor circuit device
US11/806,995 2007-06-05

Publications (1)

Publication Number Publication Date
WO2008099863A1 true WO2008099863A1 (ja) 2008-08-21

Family

ID=39690090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052391 WO2008099863A1 (ja) 2007-02-16 2008-02-14 半導体，半導体装置及び相補型トランジスタ回路装置

Country Status (1)

Country Link
WO (1) WO2008099863A1 (ja)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009028453A1 (ja) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. 薄膜トランジスタ
JP2009218562A (ja) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd トランジスタ及びその製造方法
JP2010114184A (ja) * 2008-11-05 2010-05-20 Univ Of Yamanashi アンバイポーラ型有機電界効果トランジスタ
WO2010119952A1 (ja) * 2009-04-17 2010-10-21 株式会社ブリヂストン 薄膜トランジスタ、及び薄膜トランジスタの製造方法
WO2011062048A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2011146694A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
JP2013128097A (ja) * 2011-12-16 2013-06-27 Industrial Technology Research Institute 両極性トランジスタデバイス構造およびその製造方法
JP2013191850A (ja) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
KR101372734B1 (ko) 2012-02-15 2014-03-13 연세대학교 산학협력단 액상공정을 이용한 박막 트랜지스터 및 그 제조방법
JP2015062248A (ja) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 半導体装置
JP2015164203A (ja) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017195417A (ja) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 電子機器
KR101820703B1 (ko) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조 방법, 및 그를 포함한 표시장치
JP2018061047A (ja) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019220716A (ja) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 半導体装置
JP2020017743A (ja) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN111416040A (zh) * 2020-03-11 2020-07-14 深圳大学 一种双极性薄膜晶体管及其制备方法
JP2020188277A (ja) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 半導体装置
JP2021044559A (ja) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH08228034A (ja) * 1994-12-09 1996-09-03 At & T Corp 有機薄膜トランジスタ装置
JPH09199732A (ja) * 1996-01-16 1997-07-31 Lucent Technol Inc トランジスタからなる製品
JP2006502597A (ja) * 2002-05-21 2006-01-19 ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ トランジスタ構造及びその製作方法
JP2006165532A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物を利用した半導体デバイス

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013191850A (ja) * 2007-03-20 2013-09-26 Idemitsu Kosan Co Ltd スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
WO2009028453A1 (ja) * 2007-08-31 2009-03-05 Konica Minolta Holdings, Inc. 薄膜トランジスタ
JP2009218562A (ja) * 2008-03-07 2009-09-24 Samsung Electronics Co Ltd トランジスタ及びその製造方法
JP2010114184A (ja) * 2008-11-05 2010-05-20 Univ Of Yamanashi アンバイポーラ型有機電界効果トランジスタ
WO2010119952A1 (ja) * 2009-04-17 2010-10-21 株式会社ブリヂストン 薄膜トランジスタ、及び薄膜トランジスタの製造方法
CN102460712A (zh) * 2009-04-17 2012-05-16 株式会社普利司通 薄膜晶体管以及薄膜晶体管的制造方法
JP2015164203A (ja) * 2009-10-05 2015-09-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9754784B2 (en) 2009-10-05 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US9627198B2 (en) 2009-10-05 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film semiconductor device
JP7072613B2 (ja) 2009-10-16 2022-05-20 株式会社半導体エネルギー研究所 半導体装置
JP2020188277A (ja) * 2009-10-16 2020-11-19 株式会社半導体エネルギー研究所 半導体装置
JP2019220716A (ja) * 2009-10-30 2019-12-26 株式会社半導体エネルギー研究所 半導体装置
WO2011062048A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8963149B2 (en) 2009-11-20 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8766250B2 (en) 2009-11-20 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9306075B2 (en) 2009-11-20 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US9368640B2 (en) 2009-11-28 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with stacked oxide semiconductor films
JP2015062248A (ja) * 2009-11-28 2015-04-02 株式会社半導体エネルギー研究所 半導体装置
JP2017195417A (ja) * 2009-12-04 2017-10-26 株式会社半導体エネルギー研究所 電子機器
US9378980B2 (en) 2009-12-18 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9728651B2 (en) 2009-12-18 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011146694A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10453964B2 (en) 2009-12-18 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020017743A (ja) * 2010-02-05 2020-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP7101739B2 (ja) 2010-03-05 2022-07-15 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法及びトランジスタの作製方法
JP2021044559A (ja) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー
JP2018061047A (ja) * 2010-09-13 2018-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10586869B2 (en) 2010-09-13 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
JP2013128097A (ja) * 2011-12-16 2013-06-27 Industrial Technology Research Institute 両極性トランジスタデバイス構造およびその製造方法
KR101372734B1 (ko) 2012-02-15 2014-03-13 연세대학교 산학협력단 액상공정을 이용한 박막 트랜지스터 및 그 제조방법
KR101820703B1 (ko) 2016-07-29 2018-03-08 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조 방법, 및 그를 포함한 표시장치
CN111416040A (zh) * 2020-03-11 2020-07-14 深圳大学 一种双极性薄膜晶体管及其制备方法
CN111416040B (zh) * 2020-03-11 2023-11-14 深圳大学 一种双极性薄膜晶体管及其制备方法

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