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US8268528B2 - Resist composition and patterning process - Google Patents

Resist composition and patterning process Download PDF

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Publication number
US8268528B2
US8268528B2 US12/628,794 US62879409A US8268528B2 US 8268528 B2 US8268528 B2 US 8268528B2 US 62879409 A US62879409 A US 62879409A US 8268528 B2 US8268528 B2 US 8268528B2
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polymer
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cyclic
acid
straight
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US20100136482A1 (en
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Yuji Harada
Jun Hatakeyama
Koji Hasegawa
Kazunori Maeda
Tomohiro Kobayashi
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Definitions

  • This invention generally relates to a photolithography process for the microfabrication of semiconductor devices, and particularly to an immersion photolithography process involving directing ArF excimer laser radiation having a wavelength of 193 nm from a projection lens toward a resist-coated substrate, with a liquid (e.g., water) intervening between the lens and the substrate. More particularly, it relates to a resist composition for use in the photolithography process, and a process for forming a pattern using the same.
  • the pattern rule is made drastically finer.
  • the background supporting such a rapid advance is a reduced wavelength of the light source for exposure.
  • the change-over from i-line (365 nm) of a mercury lamp to shorter wavelength KrF laser (248 nm) enabled mass-scale production of dynamic random access memories (DRAM) with an integration degree of 64 MB (processing feature size ⁇ 0.25 ⁇ m).
  • DRAM dynamic random access memories
  • the ArF excimer laser lithography combined with a high NA lens (NA ⁇ 0.9), is considered to comply with 65-nm node devices.
  • the F 2 laser lithography of 157 nm wavelength became a candidate.
  • ArF immersion lithography was proposed as a substitute for the F 2 lithography. Efforts have been made for the early introduction of ArF immersion lithography (see Proc. SPIE, Vol. 4690, xxix, 2002).
  • the space between the projection lens and the wafer is filled with water and ArF excimer laser is irradiated through the water. Since water has a refractive index of 1.44 at 193 nm, pattern formation is possible even using a lens with NA of 1.0 or greater. Theoretically, it is possible to increase the NA to 1.44. The resolution is improved by an increment of NA.
  • a combination of a lens having NA of at least 1.2 with ultra-high resolution technology suggests a way to the 45-nm node (see Proc. SPIE, Vol. 5040, p 724, 2003).
  • ARCOR antireflective coating on resist
  • JP-A 62-62520, JP-A 62-62521, and JP-A 60-38821 a typical antireflective coating on resist (ARCOR) process is disclosed in JP-A 62-62520, JP-A 62-62521, and JP-A 60-38821.
  • the ARCs are made of fluorinated compounds having a low refractive index, such as perfluoroalkyl polyethers and perfluoroalkyl amines. Since these fluorinated compounds are less compatible with organic substances, fluorocarbon solvents are used in coating and stripping of protective coatings, raising environmental and cost issues.
  • resist protective coating materials under investigation include water-soluble or alkali-soluble materials. See, for example, JP-A 6-273926, Japanese Patent No. 2,803,549, and J. Photopolymer Sci. and Technol., Vol. 18, No. 5, p 615, 2005. Since the alkali-soluble resist protective coating material is strippable with an alkaline developer, it eliminates a need for an extra stripping unit and offers a great cost saving. From this standpoint, great efforts have been devoted to develop water-insoluble resist protective coating materials, for example, resins having alkali-soluble groups such as fluorinated alcohol, carboxyl or sulfo groups on side chains. See WO 2005/42453, WO 2005/69676, JP-A 2005-264131, JP-A 2006-133716, and JP-A 2006-91798.
  • JP-A 2006-48029, JP-A 2006-309245, and JP-A 2007-187887 As means for preventing resist components from being leached out and water from penetrating into the resist film without a need for a protective coating material, it is proposed in JP-A 2006-48029, JP-A 2006-309245, and JP-A 2007-187887 to add an alkali-soluble, hydrophobic, high-molecular-weight compound as a surfactant to the resist material.
  • This method achieves equivalent effects to the use of protective coating material because the hydrophobic compound is segregated at the resist surface during resist film formation. Additionally, this method is economically advantageous over the use of a protective film because steps of forming and stripping the protective film are unnecessary.
  • One exemplary material known to have excellent water slip and water repellency is a copolymer of ⁇ -trifluoromethylacrylate and norbornene derivative (Proc. SPIE, Vol. 4690, p 18, 2002). While this polymer was originally developed as a highly transparent resin for F 2 (157 nm) lithography resist materials, it is characterized by a regular arrangement of molecules of water repellent ⁇ -trifluoromethylacrylate and norbornene derivative in a ratio of 2:1. This characteristic arrangement increases the orientation distance of water relative to the resin and improves water slip. In fact, when this polymer is used as the base polymer in a protective coating for immersion lithography, water slip is drastically improved, as described in JP-A 2007-140446 or US 20070122736.
  • Another example of the highly water repellent/water slippery material is a fluorinated ring-closing polymerization polymer having hexafluoroalcohol groups on side chains. This polymer is further improved in water slip by protecting hydroxyl groups on side chains with acid labile groups, as reported in Proc. SPIE. Vol. 6519, p 651905 (2007).
  • a material having good water slip performance is required not only from the standpoint of defects, but also from the standpoint of productivity.
  • the immersion lithography needs higher throughputs than ever.
  • the exposure time must be reduced, which in turn requires high-speed scanning operation of the stage.
  • the highly water repellent/water slippery materials discussed above are expected to be applied not only to the ArF immersion lithography, but also to the resist material for mask blanks.
  • Resist materials for mask blanks suffer from problems including a change of sensitivity during long-term exposure in vacuum and long-term stability after coating. With respect to the control of sensitivity changes in vacuum, an improvement is made by a combination of acid labile groups of acetal and tertiary ester types (U.S. Pat. No. 6,869,744). It is believed that after coating of a resist material, an amine component is adsorbed to the resist film surface whereby the resist varies its sensitivity or profile. A method of modifying the surface of a resist film for preventing adsorption of an amine component to the resist film has been devised.
  • An object of the invention is to provide a resist composition for immersion lithography which comprises an additive polymer so that the composition may have improved water repellency and water slip, cause few development defects, and form a resist pattern of satisfactory profile after development; and a pattern forming process using the resist composition.
  • a polymer of acyl-protected fluoroalcohol structure as represented by formula (1) below, has sufficient water repellency and water slip for use as an additive polymer in resist material.
  • the polymer is highly transparent to radiation of wavelength up to 200 nm. Properties of the polymer including water repellency, water slip, fat solubility, acid lability, and hydrolysis can be tailored by a choice of the structure.
  • the polymer can be prepared from reactants which are readily available and easy to handle.
  • the invention provides a resist composition
  • a resist composition comprising (A) a polymer comprising recurring units of the general formula (1), (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, said base polymer becoming soluble in alkaline developer under the action of acid, (C) a compound capable of generating an acid upon exposure to high-energy radiation, and (D) an organic solvent.
  • R 1 is hydrogen, methyl or trifluoromethyl
  • R 2a and R 2b are hydrogen or straight, branched or cyclic C 1 -C 15 alkyl
  • R 2a and R 2b may bond together to form a ring with the carbon atom to which they are attached
  • R 3 is a single bond or straight, branched or cyclic C 1 -C 15 alkylene
  • R 4 is a straight, branched or cyclic C 1 -C 20 alkyl or fluoroalkyl which may contain —O— or —C( ⁇ O)—.
  • the polymer comprising recurring units of the general formula (1) as component (A) may further comprise recurring units of one or multiple types selected from the general formulae (2a) to (2f).
  • R 1 , R 2a and R 2b are as defined above, R 5 is hydrogen, a straight, branched or cyclic C 1 -C 15 alkyl or fluoroalkyl, or an acid labile group, R 6 is a straight, branched or cyclic C 1 -C 15 fluoroalkyl, and R 7 is an acid labile group.
  • the resist composition may further comprise (E) a basic compound and/or (F) a dissolution inhibitor.
  • the invention provides;
  • a pattern forming process comprising the steps of (1) applying the resist composition defined above onto a substrate to form a resist film, (2) heat treating the resist film and exposing it to high-energy radiation through a photomask, and (3) developing the exposed resist film with a developer;
  • a pattern forming process comprising the steps of (1) applying the resist composition defined above onto a substrate to form a resist film, (2) heat treating the coated substrate, and exposing it to high-energy radiation through a photomask while keeping a liquid between a projection lens and the coated substrate, and (3) developing the exposed resist film with a developer; and
  • a pattern forming process comprising the steps of (1) applying the resist composition defined above onto a substrate to form a resist film, (2) forming a protective coating on the resist film, (3) heat treating the coated substrate, and exposing it to high-energy radiation through a photomask while keeping a liquid between a projection lens and the coated substrate, and (4) developing the exposed resist film with a developer.
  • the liquid is typically water.
  • an exposure light source emits high-energy radiation having a wavelength of 180 to 250 nm.
  • a pattern forming process comprising the steps of (1) applying the resist composition defined above onto a mask blank to form a coating, (2) heat treating the coating and irradiating it in vacuum with an electron beam, and (3) developing the coating with a developer.
  • a polymer of acyl-protected fluoroalcohol structure is useful as an additive polymer in resist material.
  • the polymer is highly transparent to radiation of wavelength up to 200 nm. Properties of the polymer including water repellency, water slip, fat solubility, acid lability, and hydrolysis susceptibility can be tailored by a choice of the polymer structure.
  • the polymer can be prepared from reactants which are readily available and easy to handle.
  • the notation (Cn-Cm) means a group containing from n to m carbon atoms per group.
  • the polymer used as an additive polymer in the resist composition of the invention is characterized by comprising recurring units of the general formula (1).
  • R 1 is hydrogen, methyl or trifluoromethyl.
  • R 2a and R 2b are hydrogen or straight, branched or cyclic C 1 -C 15 alkyl, R 2a and R 2b may bond together to form a ring with the carbon atom to which they are attached.
  • R 3 is a single bond or straight, branched or cyclic C 1 -C 15 alkylene.
  • R 4 is a straight, branched or cyclic C 1 -C 20 alkyl or fluoroalkyl which may contain —O— or —C( ⁇ O)—.
  • examples of straight, branched or cyclic C 1 -C 15 alkyl groups represented by R 2a and R 2b , and straight, branched or cyclic C 1 -C 20 , preferably C 1 -C 15 , alkyl groups represented by R 4 include, but are not limited to, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, and
  • R 2a and R 2b may bond together to form a non-aromatic ring with the carbon atom to which they are attached.
  • each of R 2a and R 2b is alkylene, examples of which include the above-exemplified alkyl groups with one hydrogen atom eliminated, and exemplary rings include cyclopentyl and cyclohexyl.
  • Suitable straight, branched or cyclic C 1 -C 15 alkylene groups represented by R 3 include the above-exemplified alkyl groups with one hydrogen atom eliminated.
  • Suitable straight, branched or cyclic C 1 -C 20 , preferably C 1 -C 15 , fluoroalkyl groups represented by R 4 include the above-exemplified alkyl groups in which some or all hydrogen atoms are substituted by fluorine atoms.
  • Examples include trifluoromethyl, 2,2,2-trifluoroethyl, 3,3,3-trifluoropropyl, 1,1,2,2,3,3,3-heptafluoropropyl, 1H,1H,3H-tetrafluoropropyl, 1H,1H,5H-octafluoropentyl, 1H,1H,7H-dodecafluoroheptyl, 2-(perfluorobutyl)ethyl, 2-(perfluorohexyl)ethyl, 2-(perfluorooctyl)ethyl, and 2-(perfluorodecyl)ethyl.
  • R 1 is as defined above.
  • the recurring units of formula (1) contribute to improvements in water repellent and water slip properties.
  • the polymer comprising recurring units of formula (1) is easy to control its structural factors, specifically the length of carbon chain, the degree of branching, and the number of fluorine atoms of R 4 .
  • a polymer having water repellent and water slip properties necessary as a particular resist additive can be prepared.
  • the polymer may be endowed with alkaline hydrolysis susceptibility.
  • the hydroxyl group of fluoroalcohol has a higher acidity than the hydroxyl group of common alcohols.
  • the ester bond in formula (1) is an ester of the hydroxyl group of fluoroalcohol having an even higher acidity due to the bonding of six fluorine atoms to adjacent carbons with a carboxylic acid, that is, a so-called mixed acid anhydride.
  • the ester bond in formula (1) is significantly susceptible to alkaline hydrolysis, as compared with the esters of common alcohols with carboxylic acids. Specifically, it is readily hydrolyzable with an alkaline developer or the like.
  • Hydrolysis of the ester bond in formula (1) results in a fluoroalcohol structure which is highly hydrophilic and highly alkaline soluble, which provides a reduction of the contact angle at polymer surface, especially after development, and contributes to a reduction of blob defects.
  • the polymer may further comprise recurring units of one or multiple types selected from the general formulae (2a) to (2f).
  • the polymer having additional recurring units incorporated herein is more improved in water repellency, water slip, alkaline solubility and contact angle after development.
  • R 1 is hydrogen, methyl or trifluoromethyl.
  • R 2a and R 2b are hydrogen or straight, branched or cyclic C 1 -C 15 alkyl, R 2a and R 2b may bond together to form a ring with the carbon atom to which they are attached.
  • R 5 is hydrogen, a straight, branched or cyclic C 1 -C 15 alkyl or fluoroalkyl, or an acid labile group.
  • R 6 is a straight, branched or cyclic C 1 -C 15 fluoroalkyl.
  • R 7 is an acid labile group.
  • the straight, branched or cyclic C 1 -C 15 alkyl groups represented by R 2a and R 2b and the rings formed thereby are the same as previous; and the straight, branched or cyclic C 1 -C 15 alkyl groups represented by R 5 are also the same as previous.
  • the straight, branched or cyclic C 1 -C 15 fluoroalkyl groups represented by R 5 and R 6 are the same as previously described for R 4 in formula (1).
  • the acid labile groups represented by R 5 and R 7 in formulae (2a) to (2f) may be selected from a variety of such groups.
  • exemplary acid labile groups include groups of the following general formulae (L1) to (L4), tertiary alkyl groups of 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, trialkylsilyl groups in which each alkyl moiety has 1 to 6 carbon atoms, and oxoalkyl groups of 4 to 20 carbon atoms.
  • R L01 and R L02 are hydrogen or straight, branched or cyclic alkyl groups of 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms.
  • R L03 is a monovalent hydrocarbon group of 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, which may contain a heteroatom such as oxygen, examples of which include unsubstituted straight, branched or cyclic alkyl groups and substituted forms of such alkyl groups in which some hydrogen atoms are replaced by hydroxyl, alkoxy, oxo, amino, alkylamino or the like.
  • R L04 is a tertiary alkyl group of 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, a trialkylsilyl group in which each alkyl moiety has 1 to 6 carbon atoms, an oxoalkyl group of 4 to 20 carbon atoms, or a group of formula (L1).
  • R L05 is an optionally substituted, straight, branched or cyclic C 1 -C 10 alkyl group or an optionally substituted C 6 -C 20 aryl group.
  • R L06 is an optionally substituted, straight, branched or cyclic C 1 -C 10 alkyl group or an optionally substituted C 6 -C 20 aryl group.
  • R L07 to R L16 independently represent hydrogen or optionally substituted monovalent hydrocarbon groups of 1 to 15 carbon atoms.
  • Letter y is an integer of 0 to 6, m is equal to 0 or 1, n is equal to 0, 1, 2 or 3, and 2m+n is equal to 2 or 3.
  • the broken line denotes a valence bond.
  • exemplary groups of R L01 and R L02 include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, cyclopentyl, cyclohexyl, 2-ethylhexyl, n-octyl, and adamantyl.
  • R L03 is a monovalent hydrocarbon group of 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, which may contain a heteroatom such as oxygen, examples of which include unsubstituted straight, branched or cyclic alkyl groups and substituted forms of such alkyl groups in which some hydrogen atoms are replaced by hydroxyl, alkoxy, oxo, amino, alkylamino or the like.
  • Illustrative examples of the straight, branched or cyclic alkyl groups are as exemplified above for R L01 and R L02 , and examples of the substituted alkyl groups are as shown below.
  • R L01 and R L02 , R L01 and R L03 , or R L02 and R L03 may bond together to form a ring with carbon and oxygen atoms to which they are attached.
  • Each of ring-forming R L01 , R L02 and R L03 is a straight or branched alkylene group of 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms when they form a ring.
  • exemplary tertiary alkyl groups of R L04 are tert-butyl, tert-amyl, 1,1-diethylpropyl, 2-cyclopentylpropan-2-yl, 2-cyclohexylpropan-2-yl, 2-(bicyclo[2.2.1]heptan-2-yl)propan-2-yl, 2-(adamantan-1-yl)propan-2-yl, 1-ethylcyclopentyl, 1-butylcyclopentyl, 1-ethylcyclohexyl, 1-butylcyclohexyl, 1-ethyl-2-cyclopentenyl, 1-ethyl-2-cyclohexenyl, 2-methyl-2-adamantyl, 2-ethyl-2-adamantyl, and the like.
  • Exemplary trialkylsilyl groups are trimethylsilyl, triethylsilyl, and dimethyl-tert-butylsilyl.
  • Exemplary oxoalkyl groups are 3-oxocyclohexyl, 4-methyl-2-oxooxan-4-yl, and 5-methyl-2-oxooxolan-5-yl.
  • examples of the optionally substituted C 1 -C 10 alkyl groups of R L05 include straight, branched or cyclic alkyl groups such as methyl, ethyl, propyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl, cyclohexyl, and bicyclo[2.2.1]heptyl, and substituted forms of such groups in which some hydrogen atoms are replaced by hydroxyl, alkoxy, carboxy, alkoxycarbonyl, oxo, amino, alkylamino, cyano, mercapto, alkylthio, sulfo or other groups or in which some methylene groups are replaced by oxygen or sulfur atoms.
  • optionally substituted C 6 -C 20 aryl groups include phenyl, methylphenyl, naphthyl, anthryl
  • Exemplary monovalent C 1 -C 15 hydrocarbon groups of R L07 to R L16 are straight, branched or cyclic alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, n-octyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl and cyclohexylbutyl, and substituted forms of these groups in which some hydrogen atoms are replaced by hydroxyl, alkoxy, carboxy, alkoxycarbonyl, oxo, amino, alkylamino, cyano, mer
  • R L07 to R L16 may bond together to form a ring with the carbon atom(s) to which they are attached (for example, a pair of R L07 and R L08 , R L07 and R L09 , R L08 and R L10 , R L09 and R L10 , R L11 and R L12 , R L13 and R L14 , or a similar pair form a ring).
  • Each of R L07 to R L16 represents a divalent C 1 -C 15 hydrocarbon group when they form a ring, examples of which are those exemplified above for the monovalent hydrocarbon groups, with one hydrogen atom being eliminated.
  • R L07 to R L16 which are attached to vicinal carbon atoms may bond together directly to form a double bond (for example, a pair of R L07 and R L09 , R L09 and R L15 , R L13 and R L15 , or a similar pair).
  • the cyclic ones are, for example, tetrahydrofuran-2-yl, 2-methyltetrahydrofuran-2-yl, tetrahydropyran-2-yl, and 2-methyltetrahydropyran-2-yl.
  • Examples of the acid labile groups of formula (L2) include tert-butoxycarbonyl, tert-butoxycarbonylmethyl, tert-amyloxycarbonyl, tert-amyloxycarbonylmethyl, 1,1-diethylpropyloxycarbonyl, 1,1-diethylpropyloxycarbonylmethyl, 1-ethylcyclopentyloxycarbonyl, 1-ethylcyclopentyloxycarbonylmethyl, 1-ethyl-2-cyclopentenyloxycarbonyl, 1-ethyl-2-cyclopentenyloxycarbonylmethyl, 1-ethoxyethoxycarbonylmethyl, 2-tetrahydropyranyloxycarbonylmethyl, and 2-tetrahydrofuranyloxycarbonylmethyl.
  • Examples of the acid labile groups of formula (L3) include 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-n-propylcyclopentyl, 1-isopropylcyclopentyl, 1-n-butylcyclopentyl, 1-sec-butylcyclopentyl, 1-cyclohexylcyclopentyl, 1-(4-methoxy-n-butyl)cyclopentyl, 1-(bicyclo[2.2.1]heptan-2-yl)cyclopentyl, 1-(7-oxabicyclo[2.2.1]heptan-2-yl)cyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, 3-methyl-1-cyclopenten-3-yl, 3-ethyl-1-cyclopenten-3-yl, 3-methyl-1-cyclohexen-3-yl, and 3-ethyl-1-cyclohexen-3-yl.
  • R L41 is each independently a monovalent hydrocarbon group, typically a straight, branched or cyclic C 1 -C 10 alkyl group, such as methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl and cyclohexyl.
  • the general formula (L4-3) represents one or a mixture of two selected from groups having the following general formulas (L4-3-1) and (L4-3-2).
  • R L41 is as defined above.
  • the general formula (L4-4) represents one or a mixture of two or more selected from groups having the following general formulas (L4-4-1) to (L4-4-4).
  • R L41 is as defined above.
  • Each of formulas (L4-1) to (L4-4), (L4-3-1) and (L4-3-2), and (L4-4-1) to (L4-4-4) collectively represents an enantiomer thereof and a mixture of enantiomers.
  • R L41 is as defined above.
  • R 1 is as defined above.
  • polymer comprising recurring units of formula (1) in combination with recurring units of formulae (2a) to (2f) exerts satisfactory performance as the resist additive
  • recurring units of one or more types selected from formulae (6a) to (6e), (7a) to (7e), (8a) to (8c), and (9a) to (9c) may be further incorporated therein for the purposes of imparting further water repellency and water slip, and controlling alkaline solubility and developer affinity.
  • R 8 is a C 1 -C 15 alkyl or fluoroalkyl group
  • R 9 is an adhesive group
  • R 10 is an acid labile group
  • R 11 is a single bond or divalent C 1 -C 15 organic group
  • R 12 and R 13 each are hydrogen, methyl or trifluoromethyl.
  • Examples of the C 1 -C 15 alkyl group represented by R 8 are the same as illustrated for R 2a and R 2b in formula (1).
  • Examples of the C 1 -C 15 fluoroalkyl group represented by R 8 are the same as illustrated for R 4 in formula (1).
  • the adhesive group represented by R 9 may be selected from a variety of such groups, typically those groups shown below.
  • the broken line designates a valence bond.
  • the acid labile group represented by R 10 may be selected from those groups illustrated for R 5 and R 7 .
  • Suitable divalent C 1 -C 15 organic groups represented by R 11 include alkyl groups as exemplified for R 2a and R 2b in formula (1), with one hydrogen atom eliminated (e.g., methylene and ethylene). Also useful are groups of the following formulae.
  • the polymer used as the additive in the resist composition of the invention is characterized by comprising essentially recurring units having formula (1). These recurring units are derived from a monomer (1′) which may be synthesized by any well-known methods, for example, the method of US 20070179309 (JP-A 2007-204385).
  • the monomer (1′) corresponding to units of formula (1) may be prepared in accordance with the following reaction scheme, for example, although the process is not limited thereto.
  • R 1 , R 2a , R 2b , R 3 , and R 4 are as defined above, Rm 1 is hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 6 carbon atoms, and M 1 is one or more elements selected from among Li, Na, K, Mg, Zn, Al, B, and Si which may be optionally substituted.
  • the reactant, 3,3,3-trifluoro-2-trifluoromethyl-2-hydroxypropionic acid derivative (I) is reacted with reducing agents or organometallic reagents (R 2a M 1 and R 2b M 1 ) to form a fluoroalcohol (II).
  • Rm 1 examples include hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, cyclopentyl and cyclohexyl.
  • Examples of the reducing agents or organometallic reagents include complex hydrides such as sodium borohydride, lithium borohydride, potassium borohydride, calcium borohydride, sodium aluminum hydride, lithium aluminum hydride, lithium triethylborohydride, lithium tri-s-butylborohydride, and potassium tri-s-butyl-borohydride, and alkoxy or alkyl derivatives thereof; organolithium reagents such as methyllithium and n-butyllithium; Grignard reagents such as methylmagnesium chloride, ethylmagnesium chloride, isopropylmagnesium chloride, and 1,4-bis(chloromagnesio)butane; organozinc reagents such as dimethylzinc; and triethylsilane.
  • complex hydrides such as sodium borohydride, lithium borohydride, potassium borohydride, calcium borohydride, sodium aluminum hydride, lithium aluminum hydr
  • the amount of reducing agent or organometallic reagent used varies with reaction conditions, it is desirably in a range of 2.0 to 5.0 moles and more preferably 2.0 to 3.0 moles per mole of the reactant, fluorine compound (I).
  • Suitable solvents include ethers such as tetrahydrofuran, diethyl ether, di-n-butyl ether, and 1,4-dioxane; hydrocarbons such as n-hexane, n-heptane, benzene, toluene, xylene, and cumene; alcohols such as methanol, ethanol, isopropyl alcohol, and tert-butyl alcohol; and aprotic polar solvents such as dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF), and acetonitrile. These solvents may be used alone or in admixture.
  • DMSO dimethyl sulfoxide
  • DMF N,N-dimethylformamide
  • acetonitrile acetonitrile
  • reaction temperature and time widely vary depending on other reaction conditions. Where a Grignard reagent is used as the organometallic reagent, for example, the reaction temperature is in a range of 0 to 100° C., preferably 20 to 70° C. It is desirable from the standpoint of yield that the reaction time is determined so as to drive the reaction to completion by monitoring the reaction process by gas chromatography (GC) or silica gel thin-layer chromatography (TLC). Usually, the reaction time is about 0.5 to 10 hours. From the reaction mixture, the desired fluoroalcohol compound (II) is recovered through an ordinary aqueous workup. If necessary, the compound may be purified by a standard technique such as distillation or recrystallization.
  • a standard technique such as distillation or recrystallization.
  • the fluoroalcohol compound (II) is esterified into a compound (III).
  • the reaction runs readily by any well-known procedure.
  • the preferred esterifying agent is an acid chloride, carboxylic acid or acid anhydride.
  • the reaction may be conducted in a solventless system or in a solvent such as methylene chloride, toluene or hexane, by sequentially or simultaneously adding alcohol (II), a corresponding acid chloride (e.g., methacrylic acid chloride or ⁇ -trifluoromethylacrylic acid chloride), and a base (e.g., triethylamine, pyridine or 4-dimethylaminopyridine), and optionally cooling or heating the reaction system.
  • a corresponding acid chloride e.g., methacrylic acid chloride or ⁇ -trifluoromethylacrylic acid chloride
  • a base e.g., triethylamine, pyridine or 4-dimethylaminopyridine
  • the reaction may be conducted in a solvent such as toluene or hexane, by adding alcohol (II), a corresponding carboxylic acid (e.g., methacrylic acid or ⁇ -trifluoromethyl-acrylic acid), and a mineral acid (e.g., hydrochloric acid, sulfuric acid, nitric acid or perchloric acid), or an organic acid (e.g., p-toluenesulfonic acid, benzenesulfonic acid or trifluoroacetic acid), heating the contents, and optionally removing the water formed during reaction from the system.
  • a solvent such as toluene or hexane
  • the reaction may be conducted in a solventless system or in a solvent such as toluene or hexane, by sequentially or simultaneously adding alcohol (II), an aliphatic sulfonyl chloride (e.g., methanesulfonyl chloride) or aromatic sulfonyl chloride (e.g., p-toluenesulfonyl chloride), an acid anhydride (e.g., acetic anhydride or trifluoroacetic anhydride), and optionally a base (e.g., triethylamine, pyridine or 4-dimethylaminopyridine), and optionally cooling or heating the reaction system.
  • alcohol II
  • an aliphatic sulfonyl chloride e.g., methanesulfonyl chloride
  • aromatic sulfonyl chloride e.g., p-toluenesulfonyl chloride
  • the reaction may be conducted in a solventless system or in a solvent such as methylene chloride, toluene or hexane, by sequentially or simultaneously adding alcohol (II), a corresponding acid anhydride (e.g., methacrylic anhydride or ⁇ -trifluoromethylacrylic anhydride), and a mineral acid (e.g., hydrochloric acid, sulfuric acid, nitric acid or perchloric acid), an organic acid (e.g., p-toluenesulfonic acid, benzenesulfonic acid or trifluoroacetic acid) or a base (e.g., triethylamine, pyridine or 4-dimethylaminopyridine), and optionally cooling or heating the reaction system.
  • alcohol II
  • a corresponding acid anhydride e.g., methacrylic anhydride or ⁇ -trifluoromethylacrylic anhydride
  • a mineral acid e.g., hydrochlor
  • a mixed acid anhydride consisting of a carboxylic acid (e.g., formic acid, acetic acid or trifluoroacetic acid), a sulfonic acid (e.g., methanesulfonic acid or p-toluenesulfonic acid), and a phenol (e.g., phenol or p-nitrophenol) or the like may be used.
  • a carboxylic acid e.g., formic acid, acetic acid or trifluoroacetic acid
  • a sulfonic acid e.g., methanesulfonic acid or p-toluenesulfonic acid
  • a phenol e.g., phenol or p-nitrophenol
  • the third step is to esterify the hydroxyl group of the resulting methacrylate (III) to provide the desired monomer (1).
  • This esterifying reaction may be done by the same procedure as in the second step.
  • polymer P1 the polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2f) is referred to as polymer P1, hereinafter.
  • the polymer P1 may be synthesized by general polymerization processes including radical polymerization using initiators such as 2,2′-azobisisobutyronitrile (AIBN), and ionic (or anionic) polymerization using alkyllithium or the like.
  • initiators such as 2,2′-azobisisobutyronitrile (AIBN)
  • ionic (or anionic) polymerization using alkyllithium or the like.
  • the polymerization may be carried out by its standard technique.
  • the polymer P1 is synthesized by radical polymerization while the polymerization conditions may be determined in accordance with the type and amount of initiator, temperature, pressure, concentration, solvent, additives, and the like.
  • radical polymerization initiator used herein examples include azo compounds such as 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis(4-methoxy-2,4-dimethylvaleronitrile), 2,2′-azobis(2,4-dimethylvaleronitrile), 2,2′-azobis(2,4,4-trimethylpentane), and dimethyl 2,2′-azobis(isobutyrate); peroxides such as tert-butylperoxypivalate, lauroyl peroxide, benzoyl peroxide, and tert-butylperoxylaurate; water-soluble polymerization initiators such as potassium persulfate; and redox initiators comprising a peroxide (e.g., potassium persulfate or hydrogen peroxide) combined with a reducing agent (e.g., sodium sulfite).
  • AIBN 2,2′-azobisisobutyronitrile
  • a peroxide e
  • the amount of polymerization initiator used may vary with its type and other polymerization conditions, it is generally used in an amount of 0.001 to 10 mol %, and preferably 0.01 to 6 mol % based on the total moles of monomers to be polymerized.
  • any known chain transfer agent such as dodecyl mercaptan or 2-mercaptoethanol may be added for molecular weight control purpose.
  • the amount of chain transfer agent added is preferably 0.01 to 10 mol % based on the total moles of monomers to be polymerized.
  • Polymer P1 may be synthesized by combining suitable monomers selected from polymerizable monomers corresponding to recurring units of formulae (1), (2a) to (2f), (6a) to (6e), (7a) to (7e), (8a) to (8c), and (9a) to (9c), adding an initiator and chain transfer agent to the monomer mixture, and effecting polymerization.
  • a solvent may be used if desired. Preferred is the solvent which does not interfere with the desired polymerization reaction.
  • Typical solvents used herein include esters such as ethyl acetate, n-butyl acetate, and ⁇ -butyrolactone; ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone; aliphatic or aromatic hydrocarbons such as toluene, xylene and cyclohexane; alcohols such as isopropyl alcohol and ethylene glycol monomethyl ether; and ether solvents such as diethyl ether, dioxane, and tetrahydrofuran, which may be used alone or in admixture.
  • the amount of solvent used may vary with the desired degree of polymerization (or molecular weight), the amount of initiator added, and other polymerization conditions such as temperature, it is generally used in such an amount as to provide a concentration of 0.1 to 95% by weight, preferably 5 to 90% by weight of monomers to be polymerized.
  • the temperature of the polymerization reaction may vary with the identity of polymerization initiator or the boiling point of solvent, it is preferably in the range of 20 to 200° C., and more preferably 50 to 140° C. Any desired reactor or vessel may be used for the polymerization reaction.
  • the organic solvent or water serving as the reaction medium is removed by any well-known techniques. Suitable techniques include, for example, re-precipitation followed by filtration, and heat distillation under vacuum.
  • polymer P1 has a weight average molecular weight (Mw) of 1,000 to 500,000, and especially 2,000 to 30,000, as determined by gel permeation chromatography (GPC) using polystyrene standards. This is because a polymer with too low a Mw may be miscible with the resist material or more dissolvable in water whereas too high a Mw may interfere with film formation after spin coating and lead to a decline of alkali solubility.
  • Mw weight average molecular weight
  • R 5 in formulae (2a), (2b) and (2f) and R 10 in formulae (6c) and (7c) may be introduced by post-protection reaction.
  • a monomer wherein R 5 or R 10 is hydrogen is previously polymerized to synthesize a precursor polymer.
  • Post-protection reaction is effected on the precursor polymer for substituting acid labile groups R 5 or R 10 for some or all hydroxyl groups on the precursor polymer as shown below.
  • R 5 and R 10 are as defined above.
  • the desired polymer is obtainable via post-protection reaction by reacting the precursor polymer with a base in an amount of 1 to 2 equivalents relative to the desired degree of substitution of hydroxyl groups, and then with R—X (wherein R is R 5 or R 10 as defined above and X is chlorine, bromine or iodine) in an amount of 1 to 2 equivalents relative to the base.
  • R—X wherein R is R 5 or R 10 as defined above and X is chlorine, bromine or iodine
  • the post-protection reaction may be effected in a solvent, which is selected from hydrocarbons such as benzene and toluene, and ethers such as dibutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran and 1,4-dioxane, alone or in admixture.
  • a solvent which is selected from hydrocarbons such as benzene and toluene, and ethers such as dibutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran and 1,4-dioxane, alone or in admixture.
  • Suitable bases used herein include, but are not limited to, sodium hydride, n-butyllithium, lithium diisopropylamide, triethylamine, and pyridine.
  • the invention provides a resist composition
  • a resist composition comprising (A) a polymer P1 comprising recurring units of formula (1), (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a compound capable of generating an acid upon exposure to high-energy radiation, and (D) an organic solvent.
  • Polymer(s) P1 as component (A) is added to the resist composition preferably in a total amount of 0.1 to 50 parts, more preferably 0.5 to 10 parts by weight per 100 parts by weight of the base resin (B). At least 0.1 phr of polymer P1 is effective in improving the receding contact angle with water of photoresist film surface, whereas up to 50 phr of polymer P1 forms a photoresist film having a low dissolution rate in alkaline developer and capable of maintaining the height of a fine pattern formed therein.
  • polymer P1 comprises recurring units of formula (1) which contain a hexafluoroalcohol structure having a protected hydroxyl group
  • a choice of resin structure makes it possible to tailor any of properties including water repellency, water slip, fat solubility, acid lability, hydrolysis, and alkaline solubility.
  • the resist composition contains (B) a base resin or polymer which has a structure derived from lactone ring and/or hydroxyl group and/or maleic anhydride and becomes soluble in alkaline developer under the action of acid.
  • the polymers which can serve as the base resin (B) include (meth)acrylates, ( ⁇ -trifluoromethyl)acrylate/maleic anhydride copolymers, cycloolefin/maleic anhydride alternating copolymers, polynorbornene, cycloolefin ring-opening metathesis polymerization (ROMP) polymers, hydrogenated cycloolefin ROMP polymers, examples of which are described in U.S. Pat. No.
  • the polymer serving as base resin (B) is not limited to one type and a mixture of two or more polymers may be added.
  • the use of plural polymers allows for easy adjustment of resist properties.
  • the base resin used herein includes, but is not limited to, those polymers comprising units of the following formula (R1) and/or (R2) and having a weight in average molecular weight (Mw) of 1,000 to 100,000, especially 3,000 to 30,000, as measured by GPC versus polystyrene standards.
  • R 001 is hydrogen, methyl or CH 2 CO 2 R 003 .
  • R 002 is hydrogen, methyl or CO 2 R 003 .
  • R 003 is a straight, branched or cyclic C 1 -C 15 alkyl group, examples of which include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl, cyclohexyl, ethylcyclopentyl, butylcyclopentyl, ethylcyclohexyl, butylcyclohexyl, adamantyl, ethyladamantyl, and butyladamantyl.
  • R 004 is hydrogen or a monovalent hydrocarbon group of 1 to 15 carbon atoms having at least one group selected from among fluorinated substituent groups, carboxyl groups and hydroxyl groups. Examples include hydrogen, carboxyethyl, carboxybutyl, carboxycyclopentyl, carboxycyclohexyl, carboxynorbornyl, carboxyadamantyl, hydroxyethyl, hydroxybutyl, hydroxycyclopentyl, hydroxycyclohexyl, hydroxynorbornyl, hydroxyadamantyl, hydroxyhexafluoroisopropylcyclohexyl, and di(hydroxyhexafluoroisopropyl)cyclohexyl.
  • At least one of R 005 to R 008 represents a carboxyl group or a monovalent hydrocarbon group of 1 to 15 carbon atoms having at least one group selected from among fluorinated substituent groups, carboxyl groups and hydroxyl groups while the remaining R's independently represent hydrogen or straight, branched or cyclic C 1 -C 15 alkyl groups.
  • Examples of suitable monovalent C 1 -C 15 hydrocarbon groups having at least one group selected from among fluorinated substituent groups, carboxyl groups and hydroxyl groups include carboxy, carboxymethyl, carboxyethyl, carboxybutyl, hydroxymethyl, hydroxyethyl, hydroxybutyl, 2-carboxyethoxycarbonyl, 4-carboxybutoxycarbonyl, 2-hydroxyethoxycarbonyl, 4-hydroxybutoxycarbonyl, carboxycyclopentyloxycarbonyl, carboxycyclohexyloxycarbonyl, carboxynorbornyloxycarbonyl, carboxyadamantyloxycarbonyl, hydroxycyclopentyloxycarbonyl, hydroxycyclohexyloxycarbonyl, hydroxynorbornyloxycarbonyl, hydroxyadamantyloxycarbonyl, hydroxyhexafluoroisopropylcyclohexyloxycarbonyl, and di(hydroxyhexafluoroisopropyl)cyclohe
  • R 005 to R 008 may bond together to form a ring with the carbon atom(s) to which they are attached, and in that event, at least one of ring forming R 005 to R 008 is a divalent hydrocarbon group of 1 to 15 carbon atoms having at least one group selected from fluorinated substituent groups, carboxyl groups and hydroxyl groups, while the remaining R's are independently single bonds or straight, branched or cyclic C 1 -C 15 alkylene groups.
  • Suitable divalent C 1 -C 15 hydrocarbon groups having at least one group selected from fluorinated substituent groups, carboxyl groups and hydroxyl groups include those exemplified above as the monovalent hydrocarbon groups having at least one group selected from fluorinated substituent groups, carboxyl groups and hydroxyl groups, with one hydrogen atom eliminated therefrom.
  • Suitable straight, branched or cyclic C 1 -C 15 alkylene groups include those groups exemplified for R 003 , with one hydrogen atom eliminated therefrom.
  • R 009 is a monovalent hydrocarbon group of 3 to 15 carbon atoms containing a —CO 2 — partial structure.
  • Examples include 2-oxooxolan-3-yl, 4,4-dimethyl-2-oxooxolan-3-yl, 4-methyl-2-oxooxan-4-yl, 2-oxo-1,3-dioxolan-4-ylmethyl, and 5-methyl-2-oxooxolan-5-yl.
  • At least one of R 010 to R 013 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO 2 — partial structure, while the remaining R's are independently hydrogen atoms or straight, branched or cyclic C 1 -C 15 alkyl groups.
  • Suitable monovalent C 2 -C 15 hydrocarbon groups containing a —CO 2 — partial structure include 2-oxooxolan-3-yloxycarbonyl, 4,4-dimethyl-2-oxooxolan-3-yloxycarbonyl, 4-methyl-2-oxooxan-4-yloxycarbonyl, 2-oxo-1,3-dioxolan-4-ylmethyloxycarbonyl, and 5-methyl-2-oxooxolan-5-yloxycarbonyl.
  • Suitable straight, branched or cyclic C 1 -C 15 alkyl groups are as exemplified for R 003 .
  • R 010 to R 013 may bond together to form a ring with the carbon atom(s) to which they are attached, and in that event, at least one of ring-forming R 010 to R 013 is a divalent hydrocarbon group of 1 to 15 carbon atoms containing a —CO 2 — partial structure, while the remaining R's are independently single bonds or straight, branched or cyclic C 1 -C 15 alkylene groups.
  • Suitable divalent C 1 -C 15 hydrocarbon groups containing a —CO 2 — partial structure include 1-oxo-2-oxapropane-1,3-diyl, 1,3-dioxo-2-oxapropane-1,3-diyl, 1-oxo-2-oxabutane-1,4-diyl, and 1,3-dioxo-2-oxabutane-1,4-diyl, as well as those exemplified as the monovalent hydrocarbon groups containing a —CO 2 — partial structure, with one hydrogen atom eliminated therefrom.
  • Suitable straight, branched or cyclic C 1 -C 15 alkylene groups include those groups exemplified for R 003 , with one hydrogen atom eliminated therefrom.
  • R 014 is a polycyclic hydrocarbon group having 7 to 15 carbon atoms or an alkyl group containing such a polycyclic hydrocarbon group. Examples include norbornyl, bicyclo[3.3.1]nonyl, tricyclo[5.2.1.0 2.6 ]decyl, adamantyl, ethyladamantyl, butyladamantyl, norbornylmethyl, and adamantylmethyl.
  • R 015 is an acid labile group, examples of which are described above.
  • R 016 is hydrogen or methyl.
  • R 017 is a straight, branched or cyclic C 1 -C 8 alkyl group, examples of which include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl and cyclohexyl.
  • X is CH 2 or an oxygen atom.
  • Letter k is 0 or 1.
  • a compound capable of generating an acid upon exposure to high-energy radiation referred to as “photoacid generator” or PAG
  • the photoacid generator may be any compound capable of generating an acid upon exposure of high-energy radiation.
  • Suitable photoacid generators include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide, and oxime-O-sulfonate acid generators.
  • Exemplary acid generators are described in U.S. Pat. No. 7,537,880 (JP-A 2008-111103, paragraphs [0123] to [0138]).
  • the preferred PAGs are those compounds of the general formula (C)-1.
  • R 405 , R 406 , and R 407 are each independently hydrogen or a straight, branched or cyclic, monovalent C 1 -C 20 hydrocarbon group which may contain a heteroatom, typically an alkyl or alkoxy group.
  • R 408 is a straight, branched or cyclic, monovalent C 7 -C 30 hydrocarbon group which may contain a heteroatom.
  • hydrocarbon groups optionally containing a heteroatom represented by R 405 , R 406 , and R 407 , include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, tert-amyl, n-pentyl, n-hexyl, cyclopentyl, cyclohexyl, ethylcyclopentyl, butylcyclopentyl, ethylcyclohexyl, butylcyclohexyl, adamantyl, ethyladamantyl, butyladamantyl, and modified forms of the foregoing in which any carbon-carbon bond is separated by a hetero-atomic grouping such as —O—, —S—, —SO—, —SO 2 —, —NH—, —C( ⁇ O)—, —C( ⁇ O)O—, or
  • PAG may be added in any desired amount as long as the objects of the invention are not compromised.
  • An appropriate amount of PAG is 0.1 to 10 parts, and more preferably 0.1 to 5 parts by weight per 100 parts by weight of the base resin in the composition. Too large an amount of PAG may give rise to problems of degraded resolution and foreign matter upon development and resist film peeling.
  • the PAG may be used alone or in admixture of two or more.
  • the transmittance of the resist film can be controlled by using a PAG having a low transmittance at the exposure wavelength and adjusting the amount of the PAG added.
  • an acid diffusion controlling function may be provided when two or more PAGs are used in admixture provided that one PAG is an onium salt capable of generating a weak acid.
  • a PAG capable of generating a strong acid e.g., fluorinated sulfonic acid
  • an onium salt capable of generating a weak acid e.g., non-fluorinated sulfonic acid or carboxylic acid
  • a salt exchange occurs whereby the weak acid is released and an onium salt having a strong acid anion is formed.
  • the strong acid is exchanged into the weak acid having a low catalysis, incurring apparent deactivation of the acid for enabling to control acid diffusion.
  • the PAG capable of generating a strong acid is also an onium salt
  • an exchange from the strong acid (generated upon exposure to high-energy radiation) to a weak acid as above can take place, but it never happens that the weak acid (generated upon exposure to high-energy radiation) collides with the unreacted onium salt capable of generating a strong acid to induce a salt exchange. This is because of a likelihood of an onium cation forming an ion pair with a stronger acid anion.
  • An appropriate amount of PAG added is 0.1 to 20 parts, and more preferably 0.1 to 10 parts by weight per 100 parts by weight of the base resin (B) in the composition.
  • the PAG may be used alone or in admixture of two or more.
  • the transmittance of the resist film can be controlled by using a PAG having a low transmittance at the exposure wavelength and adjusting the amount of the PAG added.
  • the resist composition may further comprise one or more of (D) an organic solvent, (E) a basic compound, (F) a dissolution regulator, (G) a surfactant, and (H) an acetylene alcohol derivative.
  • the organic solvent (D) used herein may be any organic solvent in which polymer P1, the base resin, PAG, and other components are soluble. Exemplary solvents are described in JP-A 2008-111103, paragraph [0144].
  • the organic solvents may be used alone or in combinations of two or more thereof.
  • An appropriate amount of the organic solvent used is 200 to 3,000 parts, especially 400 to 2,500 parts by weight per 100 parts by weight of the base resin (B). It is recommended to use diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, propylene glycol monomethyl ether acetate (PGMEA), and mixtures thereof because the acid generator is most soluble therein.
  • nitrogen-containing organic compounds are preferred and may be used alone or in admixture. Those compounds capable of suppressing the rate of diffusion when the acid generated by the acid generator diffuses within the resist film are useful. The inclusion of nitrogen-containing organic compound holds down the rate of acid diffusion within the resist film, resulting in better resolution. In addition, it suppresses changes in sensitivity following exposure and reduces substrate and environment dependence, as well as improving the exposure latitude and the pattern profile.
  • Suitable nitrogen-containing organic compounds include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having carboxyl group, nitrogen-containing compounds having sulfonyl group, nitrogen-containing compounds having hydroxyl group, nitrogen-containing compounds having hydroxyphenyl group, amide, imide acid carbamate derivatives.
  • the basic compound is preferably used in an amount of 0.001 to 2 parts, more preferably 0.01 to 1 part by weight per 100 parts by weight of the base resin (B). At least 0.001 phr achieves the desired addition effect whereas up to 2 phr minimizes the risk of reducing sensitivity.
  • Tertiary amines are especially preferred as the basic compound.
  • Examples include tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-octylamine, N,N-dimethylaniline, triethanolamine, triisopropanolamine, tris(2-methoxymethoxyethyl)amine, tris(2-methoxyethoxyethyl)amine, tris ⁇ 2-(2-methoxyethoxy)ethyl ⁇ amine, tris ⁇ 2-(2-methoxyethoxymethoxy)ethyl ⁇ amine, tris ⁇ 2-(1-methoxyethoxy)ethyl ⁇ amine, tris ⁇ 2-(1-ethoxyethoxy)ethyl ⁇ amine, tris ⁇ 2-(1-ethoxypropoxy)ethyl ⁇ amine, tris[2- ⁇ 2-(2-hydroxyethoxy)ethoxy ⁇ ethyl]amine, 4,7,13,16,21,
  • Illustrative examples of the basic compounds include 1-[2-(methoxymethoxy)ethyl]pyrrolidine, 1-[2-(methoxymethoxy)ethyl]piperidine, 4-[2-(methoxymethoxy)ethyl]morpholine, 1-[2-(methoxymethoxy)ethyl]imidazole, 1-[2-(methoxymethoxy)ethyl]benzimidazole, 1-[2-(methoxymethoxy)ethyl]-2-phenylbenzimidazole, 1-[2-[(2-methoxyethoxy)methoxy]ethyl]pyrrolidine, 1-[2-[(2-methoxyethoxy)methoxy]ethyl]piperidine, 4-[2-[(2-methoxyethoxy)methoxy]ethyl]morpholine, 1-[2-[(2-methoxyethoxy)methoxy]ethyl]imidazole, 1-[2-[(2-methoxy
  • the dissolution regulator or inhibitor (F) which can be added to the resist composition is a compound having on the molecule at least two phenolic hydroxyl groups which are protected with an acid labile group, or a compound having on the molecule at least one carboxyl group which is protected with an acid labile group.
  • Exemplary regulators are described in JP-A 2008-122932, paragraphs [0155] to [0178].
  • the resist composition may further comprise (G) a surfactant which is commonly used for facilitating the coating operation.
  • a surfactant which is commonly used for facilitating the coating operation.
  • Exemplary surfactants are described in JP-A 2008-111103, paragraph [0166].
  • the resist composition may further comprise (H) an acetylene alcohol derivative.
  • H an acetylene alcohol derivative.
  • Exemplary compounds are described in JP-A 2008-122932, paragraphs [0180] to [0181].
  • a pattern may be formed from the resist composition of the invention using any well-known lithography process.
  • the preferred method includes at least the steps of forming a photoresist coating on a substrate, exposing it to high-energy radiation, and developing it with a developer.
  • the resist composition is applied onto a substrate, typically a silicon wafer by a suitable coating technique such as spin coating.
  • the coating is prebaked on a hot plate at a temperature of 60 to 150° C. for 1 to 10 minutes, preferably 80 to 140° C. for 1 to 5 minutes, to form a photoresist film of 0.1 to 2.0 ⁇ m thick. It is noted in conjunction with spin coating that if the resist composition is coated onto the surface of a substrate which has been wetted with the resist solvent or a solution miscible with the resist solvent, then the amount of the resist composition dispensed can be reduced (see JP-A 9-246173).
  • a patterning mask having the desired pattern is then placed over the photoresist film, and the film exposed through the mask to an electron beam or to high-energy radiation such as deep-UV, excimer laser or x-ray in a dose of 1 to 200 mJ/cm 2 , and preferably 10 to 100 mJ/cm 2 .
  • the high-energy radiation used herein preferably has a wavelength in the range of 180 to 250 nm.
  • Light exposure may be dry exposure in air or nitrogen atmosphere, EB or EUV exposure in vacuum, or immersion lithography of providing a liquid, typically water between the photoresist film and the projection lens.
  • the immersion lithography involves prebaking a resist film and exposing the resist film to light through a projection lens, with pure water or similar liquid interposed between the resist film and the projection lens. Since this allows projection lenses to be designed to a NA of 1.0 or higher, formation of finer patterns is possible.
  • the immersion lithography is important for the ArF lithography to survive to the 45-nm node.
  • the liquid used herein may be a liquid with a refractive index of at least 1 which is highly transparent at the exposure wavelength, typically pure water or alkane.
  • the photoresist film formed from the resist composition of the invention has such barrier properties to water that it may inhibit resist components from being leached out in water and as a consequence, eliminate a need for a protective coating in immersion lithography and reduce the cost associated with protective coating formation or the like.
  • the photoresist film has so high a receding contact angle with water that few liquid droplets may be left on the surface of the photoresist film after immersion lithography scanning, minimizing pattern formation failures induced by liquid droplets left on the film surface.
  • a protective coating may be formed on top of the resist film.
  • the protective coatings used in the immersion lithography include those of the solvent strippable type and the developer dissolvable type.
  • the protective coatings of the developer dissolvable type that can be stripped during development of a photoresist film are advantageous because the process becomes simple.
  • the resist protective coating used in the immersion lithography may be formed from a coating solution, for example, a topcoat solution of a polymer having acidic units such as 1,1,1,3,3,3-hexafluoro-2-propanol, carboxyl or sulfo groups which is insoluble in water and soluble in an alkaline developer liquid, in a solvent selected from alcohols of at least 4 carbon atoms, ethers of 8 to 12 carbon atoms, and mixtures thereof.
  • the resist protective coating is not limited thereto.
  • the resist protective coating may be formed by spin coating a topcoat solution onto a prebaked photoresist film, and prebaking on a hot plate at 50 to 150° C. for 1 to 10 minutes, preferably at 70 to 140° C. for 1 to 5 minutes.
  • the protective coating has a thickness in the range of 10 to 500 nm.
  • the amount of the protective coating material dispensed in forming a protective coating by spin coating may be reduced by previously wetting the resist film surface with a suitable solvent and applying the protective coating material thereto.
  • the resist film is post-exposure baked (PEB) on a hot plate at 60 to 150° C. for 1 to 5 minutes, and preferably at 80 to 140° C. for 1 to 3 minutes.
  • PEB post-exposure baked
  • the water on the protective coating should be dried or recovered by suitable means, for example, spin drying, purging the protective coating surface with dry air or nitrogen, or optimizing the shape of a water recovery nozzle on the relevant stage or a water recovery process.
  • aqueous alkaline solution such as a 0.1 to 5 wt %, preferably 2 to 3 wt %, aqueous solution of tetramethylammonium hydroxide (TMAH), this being done by a conventional method such as dip, puddle, or spray development for a period of 10 to 300 seconds, and preferably 0.5 to 2 minutes.
  • TMAH tetramethylammonium hydroxide
  • a typical developer is a 2.38 wt % TMAH aqueous solution.
  • a resist solution is prepared by adding polymer P1 to any one of the aforementioned base resins and dissolving them in an organic solvent.
  • the resist solution is coated on a mask blank substrate of SiO 2 , Cr, CrO, CrN, MoSi or the like.
  • novolac resins and hydroxystyrene are often used as the base resin of the resist composition for use with mask blanks. Those resins in which alkali soluble hydroxyl groups are substituted by acid labile groups are used for positive resists while these resins in combination with crosslinking agents are used for negative resists.
  • Base polymers which can be used herein include copolymers of hydroxystyrene with one or more of (meth)acrylic derivatives, styrene, vinyl naphthalene, vinyl anthracene, vinyl pyrene, hydroxyvinyl naphthalene, hydroxyvinyl anthracene, indene, hydroxyindene, acenaphthylene, and norbornadiene.
  • the structure is exposed to EB in vacuum using an EB image-writing system.
  • the exposure is followed by post-exposure baking (PEB) and development in an alkaline developer for 10 to 300 seconds, thereby forming a pattern.
  • PEB post-exposure baking
  • Mw and Mn are weight and number average molecular weights, respectively, as measured by gel permeation chromatography (GPC) using polystyrene standards, and Mw/Mn is a polydispersity index.
  • GPC gel permeation chromatography
  • Me stands for methyl
  • PGMEA propylene glycol monomethyl ether acetate.
  • Polymerizable monomers' (Monomers 1 to 13) used in polymer synthesis are identified below by their structural formulae.
  • Polymers 1 to 19 were synthesized using the polymerizable monomers (Monomers 1 to 13) in accordance with the formulation shown in Tables 1 to 5.
  • the polymer thus precipitated was filtered and washed four times with 600 g of a 9/1 hexane/isopropyl ether mixture, obtaining a white solid.
  • the solid was vacuum dried at 50° C. for 20 hours, yielding 92.8 g of the target polymer, designated Comparative Polymer 1.
  • the polymer On GPC analysis, the polymer had Mw of 7,800 and Mw/Mn of 1.6.
  • a resist solution was prepared by dissolving 5 g of Resist Polymer, 0.25 g of an additive polymer selected from Polymers 8 to 19 and Comparative Polymer 1, 0.25 g of PAG1, and 0.05 g of Quencher 1 (all shown below) in 75 g of PGMEA and filtering through a polypropylene filter having a pore size of 0.2 ⁇ m.
  • a resist solution was similarly prepared without adding the additive polymer.
  • An antireflective coating ARC-29A (Nissan Chemical Co., Ltd.) was deposited on a silicon substrate to a thickness of 87 nm.
  • the resist solution was applied onto the ARC and baked at 120° C. for 60 seconds to form a resist film of 150 nm thick.
  • a contact angle with water of the resist film was measured, using an inclination contact angle meter prop Master 500 by Kyowa Interface Science Co., Ltd. Specifically, the wafer covered with the resist film was kept horizontal, and 50 ⁇ l, of pure water was dropped on the resist film to form a droplet. While the wafer was gradually inclined, the angle (sliding angle) at which the droplet started sliding down was determined as well as receding contact angle. The results are shown in Table 6.
  • a smaller sliding angle indicates an easier flow of water on the resist film.
  • a larger receding contact angle indicates that fewer liquid droplets are left during high-speed scan exposure. It is demonstrated in Table 6 that the inclusion of the additive polymer of the invention in a resist solution achieves a drastic improvement in the receding contact angle of photoresist film without adversely affecting the sliding angle, as compared with those photoresist films free of the additive polymer.
  • the resist film-bearing wafer (prepared above) was irradiated through an open frame at an energy dose of 50 mJ/cm 2 using an ArF scanner S305B (Nikon Corp.). Then a true circle ring of Teflon® having an inner diameter of 10 cm was placed on the resist film, 10 mL of pure water was carefully injected inside the ring, and the resist film was kept in contact with water at room temperature for 60 seconds. Thereafter, the water was recovered, and a concentration of photoacid generator (PAG1) anion in the water was measured by an LC-MS analyzer (Agilent). The anion concentration measured indicates an amount of anions leached out for 60 seconds. The results are also shown in Table 6. It is evident from Table 6 that a photoresist film formed from a resist solution containing the inventive polymer is effective in inhibiting the PAG from being leached out of the film in water.
  • PAG1 photoacid generator
  • the resist film-bearing wafer (prepared above) was exposed by means of an ArF scanner model S307E (Nikon Corp., NA 0.85, ⁇ 0.93, 4/5 annular illumination, 6% halftone phase shift mask), rinsed for 5 minutes while splashing pure water, post-exposure baked (PEB) at 110° C. for 60 seconds, and developed with a 2.38 wt % TMAH aqueous solution for 60 seconds, forming a 75-nm line-and-space pattern. The wafer was sectioned, and the profile and sensitivity of the 75-nm line-and-space pattern were evaluated. The results are also shown in Table 6.
  • the resist film having the additive polymer of the invention formulated therein formed a pattern of rectangular profile, in stark contrast with the resist film free of the additive polymer of the invention forming a pattern of T-top profile.

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