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TWI719161B - 晶圓之加工方法 - Google Patents

晶圓之加工方法 Download PDF

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TWI719161B
TWI719161B TW106108000A TW106108000A TWI719161B TW I719161 B TWI719161 B TW I719161B TW 106108000 A TW106108000 A TW 106108000A TW 106108000 A TW106108000 A TW 106108000A TW I719161 B TWI719161 B TW I719161B
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holding
suction pad
pinch
holding surface
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TW201810408A (zh
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中村勝
北村宏
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日商迪思科股份有限公司
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Abstract

本發明之課題係提供在實施研削晶圓之背面 使予以薄化，同時分割成各個裝置之工程之時，可以防止在無意圖之處產生破裂現象之情形的晶圓之加工方法。

本發明之晶圓之加工方法包含：搬運工 程，其係將晶圓搬運至第2挾盤載置台，且在保持面保持晶圓之保護膠帶側，使吸引墊遠離晶圓之背面；和研削工程，其係研削該晶圓之背面使予以薄化，同時將晶圓分割成各個裝置晶片。該搬運工程包含：載置工程，其係將被保持於該吸引墊的晶圓載置在第2挾盤載置台之保持面；挾持工程，其係截斷該吸引墊之吸引力，且以該吸引墊和該保持面挾持晶圓；及保持工程，其係使該保持面作用吸引力，且使該保持面吸引保持晶圓之保護膠帶側而使該吸引墊遠離晶圓之背面。

Description

晶圓之加工方法
本發明係關於在晶圓之內部定位雷射光線之聚光點而形成改質層，分割成各個裝置晶片的晶圓之加工方法。
IC、LSI等之複數的裝置藉由分割預定線被區劃且被形成在表面的晶圓，藉由切割裝置、雷射加工裝置等而被分割成各個裝置晶片，被分割之裝置晶片被利用於行動電話、個人電腦等之電氣機器。
再者，提案有從晶圓之背面，將相對於晶圓具有穿透性之波長的雷射光線之聚光點定位在與分割預定線對應之內部而予以照射而沿著分割預定線形成改質層，之後，研削晶圓之背面使予以薄化，同時將晶圓分割成各個裝置之技術(例如，參照專利文獻1)。
若藉由上述專利文獻1所揭示之技術，比起藉由以往之切割裝置等而沿著分割預定線形成分割起點之情況，可以使裝置晶片之厚度予以薄化，同時可以提升抗折強度。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2014-007257號公報
在此，本發明者發現從晶圓之背面側照射雷射光線而在晶圓內部形成改質層，之後，研削晶圓之背面使予以薄化，同時分割成各個裝置晶片之工程之時，在與形成改質層之分割預定線不同之處，有產生晶圓破裂之現象之情況，藉由該破裂現象，被形成在晶圓之表面的裝置部分性地破損。該裝置晶片之生產效率明顯地下降之問題
鑒於上述問題點，本發明者針對產生上述破裂現象之原因，進行精心研究之結果，找出以下之見解。
將在雷射加工裝置中，從晶圓之背面側照射雷射光線而在晶圓內部形成改質層之改質層形成工程完成的晶圓，從被照射雷射光線之時保持晶圓之挾盤載置台搬出，搬入至將次工程之晶圓之背面予以研削使予以薄化，同時將晶圓分割成各個裝置晶片之研削裝置之挾盤載置台的搬運手段，首先藉由吸引墊吸引被保持至該雷射加工裝置之挾盤載置台之晶圓。於吸引該晶圓之時，該吸引墊之吸引力使晶圓內部產生不均勻之內部應力，以該內部應力不充分被釋放之原樣，使該晶圓載置於下一個研削工程中被使用之挾盤載置台而予以吸引保持時，藉由該吸引墊迫使產生之 內部應力部分性地殘留在晶圓內部。而且，在下一個之研削工程中，以研削晶圓背面使予以薄化之時之研削壓力被施加為契機，使在無意圖產生上述殘留內部應力之位置產生破裂現象。
本發明係鑒於上述事實，其主要技術課題提供在實施研削晶圓之背面使予以薄化，同時分割成各個裝置晶片之工程之時，可以防止在無意圖之處產生破裂現象之情形的晶圓之加工方法。
為了解決上述主要之技術課題，若藉由本發明時，提供一種晶圓之加工方法，其係將複數之裝置藉由分割預定線被區劃且被形成在表面的晶圓分割成各個裝置晶片，其特徵在於具備：保護膠帶黏貼工程，其係在晶圓之表面黏貼保護膠帶；保持工程，其係在具有吸引保持晶圓之保持面之第1挾盤載置台，保持晶圓之保護膠帶側；改質層形成工程，其係從晶圓之背面，將相對於晶圓具有穿透性之波長之雷射光線之聚光點定位在與分割預定線對應之晶圓內部而予以照射，沿著分割預定形成改質層；搬出工程，其係藉由具備吸引保持晶圓之吸引墊之搬運手段，吸引保持被保持在該第1挾盤載置台之晶圓之背面，且從該第1挾盤載置台搬出；搬運工程，其係藉由該搬運手段，將晶圓搬運至具有吸引保持晶圓之保持面的第2挾盤載置台，在該保持面保持晶圓之保護膠帶側而使該搬運 手段之吸引墊遠離從晶圓之背面；及研削工程，研削被吸引保持於該第2挾盤載置台之晶圓之背面使予以薄化，同時將晶圓分割成各個裝置晶片；該搬運工程包含：載置工程，其係將被保持於該搬運手段之吸引墊的晶圓載置在該第2挾盤載置台之保持面；挾持工程，其係截斷該吸引墊之吸引力，且以該吸引墊和該保持面挾持晶圓；和保持工程，其係實行該挾持工程之後，使該保持面作用吸引力，且使該保持面吸引保持晶圓之保護膠帶側而使該吸引墊遠離晶圓之背面。
當藉由本發明時，將晶圓從吸引墊轉移至第2挾盤載置台之時，截斷吸引墊之吸引力，晶圓之內部應力被釋放，不殘存藉由該吸引墊所生成之朝向晶圓之內部應力，被移轉至第2挾盤載置台而被吸引保持，即使實施研削形成改質層之晶圓之背面使予以薄化，同時將晶圓分割成各個裝置晶片之研削工程，裝置部分性地破損的問題也消除。
4‧‧‧雷射加工裝置
6‧‧‧研削裝置
10‧‧‧矽晶圓
10a‧‧‧表面
10b‧‧‧背面
10c‧‧‧改質層
12‧‧‧裝置
14‧‧‧分割預定線
20‧‧‧保護膠帶
30‧‧‧第1挾盤載置台
40‧‧‧雷射光線照射手段
50‧‧‧搬運手段
52‧‧‧搬運臂
54‧‧‧吸引墊
60‧‧‧第2挾盤載置台
70‧‧‧研削手段
圖1係表示在矽晶圓黏貼保護膠帶之保護膠帶黏貼工程的斜視圖。
圖2係表示使圖1之矽晶圓保持在雷射加工裝置之第 1挾盤載置台之保持工程的斜視圖。
圖3(a)係表示在圖1之矽晶圓形成改質層之改質層形成工程的斜視圖，(b)為其放大剖面圖。
圖4係表示從雷射加工裝置之第1挾盤載置台搬出矽晶圓之搬出工程之概略的斜視圖。
圖5係用以更具體性地說明圖4表示之搬出工程的說明圖。
圖6係表示將從第1挾盤載置台搬出之矽晶圓搬運至在研削工程中使用之第2挾盤載置台之搬運工程之概略的斜視圖。
圖7係用以更具體性地說明圖6表示之搬運工程的說明圖。
圖8係表示利用研削裝置研削矽晶圓之研削工程的斜視圖。
以下，針對實施藉由本發明的晶圓之加工方法之具體的實施型態，一面參照附件圖面一面予以詳細說明。
如圖1所示般，在本實施型態中，在成為被加工物之例如矽晶圓10之表面10a側，黏貼保護該表面之保護膠帶20(保護膠帶黏貼工程)。在矽晶圓10之表面10a格子狀地形成複數之分割預定線14，矽晶圓10之表面藉由分割預定線14被區劃成複數之區域。在該複數之 區域分別形成有IC等之裝置12。研削前之矽晶圓10具有例如775μm之厚度，保護膠帶20可以使用在厚度100μm之由聚氯乙烯(PVC)所構成之薄片狀基材之表面，塗佈厚度5μm左右的丙烯酸樹脂系之糊料。
若實施上述保護膠帶黏貼工程時，如圖2(a)所示般，使黏貼保護膠帶20之表面10a側朝向下方，使成為被加工面之背面10b側朝向上方，在雷射加工裝置4(針對全體構成省略)所具備之第1挾盤載置台30之保持面32上載置矽晶圓10(參照圖2(b))。第1挾盤載置台30被構成藉由無圖示之旋轉驅動機構能夠旋轉，保持面32係由多孔性材料所構成，被連接於無圖示之吸引手段，於後述之研削工程時，矽晶圓10在第1挾盤載置台30上吸引保持該矽晶圓。
如圖3所示般，從雷射加工裝置4所具備之雷射光線照射手段40照射雷射光線而對矽晶圓10之內部，實施形成成為沿著分割預定線14之分割起點的改質層10c之改質層形成工程。更具體而言，藉由無圖示之攝影手段，經由進行雷射光線照射位置，和矽晶圓10之分割預定線14之定位的對準工程，啟動雷射加工裝置4之雷射光線照射手段40，從矽晶圓10之背面10b側，藉由被配設在雷射光線照射手段40之雷射振盪器(省略圖示)使相對於矽晶圓10具有穿透性之波長的雷射光線振盪，經由聚光器42將聚光點定位在矽晶圓10之內部，沿著分割預定線14照射雷射光線，使第1挾盤載置台30在圖3 之箭號X所示之方向以特定之加工進給速度移動。而且，控制雷射光線照射手段40、使無圖示之第1挾盤載置台30移動之X方向移動手段、Y方向移動手段、使第1挾盤載置台30旋轉之旋轉手段等，而形成沿著矽晶圓10上之所有的分割預定線14而成為分割起點的改質層10c。
另外，藉由上述雷射光線照射手段40被實行之改質層形成工程係以例如以下般之雷射加工條件而被實施。
波長：1342nm
平均輸出：0.18W
重覆頻率：80kHz
點徑：Φ1μm
加工進給速度：180mm/秒
聚光點位置：從表面10a距離70μm(從背面10b距離705μm)
若該改質層形成工程完成時，如圖4所示般，實施矽晶圓10遠離第1挾盤載置台30而予以搬出之搬出工程。針對該搬出工程，使用圖5更具體地予以說明。用以實施該搬出工程之搬運手段50(針對全體構成予以省略)具備搬運臂52，和朝向搬運臂52之前端下方被配列之吸引墊54。該搬運臂52係被構成藉由無圖示之移動機構，能夠相對於水平方向及上下方向移動自如。該吸引墊54構成與第1挾盤載置台30略同形狀之圓盤形狀，被配設在吸引墊54之下面的吸引部56係由能夠通氣之多孔 材料所構成，同時經由搬運臂52而被連接於無圖示之吸引手段。
當該搬出工程開始時，如圖5(a)所示般，搬運臂52藉由該移動機構被移動，被配設在前端部之吸引墊54被定位在被吸引保持在第1挾盤載置台30上之矽晶圓10之正上方。若吸引墊54被定位在矽晶圓10之正上方時，使該移動機構作動，而使搬運臂52下降。而且，使成為一面以無圖示之接近感測器測量吸引墊54之吸引部56和矽晶圓10之距離，一面抵接於第1挾盤載置台30上之矽晶圓10之背面10b，以第1挾盤載置台30和吸引墊54挾持矽晶圓10的狀態(參照圖5(b))。
在矽晶圓10被第1挾盤載置台30和吸引墊54挾持之狀態下，使搬運手段50之無圖示之吸引手段作動，依此成為矽晶圓10從第1挾盤載置台30側之保持面32和該吸引部56之雙方被吸引之狀態。之後，截斷作用於第1挾盤載置台30之吸引力，使成為僅從吸引墊54被吸引之狀態之後，使搬運臂52上升而使矽晶圓10遠離第1挾盤載置台30，依此該搬出工程完成(參照圖5(c))。
若該搬出工程完成時，如圖6所示般，實施對用以研削形成改質層之矽晶圓10之背面10b側之研削裝置6(省略全體圖)所具備之第2挾盤載置台60，搬運矽晶圓10之搬運工程。在該搬運工程中，將該矽晶圓10之保護膠帶20側保持在該保持面62而使該搬運手段50之吸引墊54遠離矽晶圓10之背面10b。另外，在第2挾盤 載置台60之上面，與第1挾盤載置台30相同，形成吸引保持矽晶圓10之保持面62，該保持面62係由能夠通氣之多孔質材料所構成，被連接於無圖示之吸引手段。再者，本實施型態之該研削裝置6係連接於形成改質層之雷射加工裝置4而被配置，搬運手段50係被構成從該雷射加工裝置4對研削裝置6搬運矽晶圓10。針對該搬出工程，一面參照圖7一面更具體地予以說明。
如圖7(a)所示般，使無圖示之移動機構作用而與搬運臂52一起移動吸引墊54，定位在研削矽晶圓10之背面10b之研削裝置6之第2挾盤載置台60之正上方。若吸引墊54被定位在第2挾盤載置台60之正上方時，並且使該移動機構作動，而使搬運臂52下降。下降之時，一面以無圖示之接近感測器測量吸引墊54吸引保持之矽晶圓10，和第2挾盤載置台60之保持面62之距離，一面使矽晶圓10之保護膠帶20側抵接於第2挾盤載置台60之保持面62，使成為矽晶圓10被載置於第2挾盤載置台60上之狀態(參照圖7(c))(載置步驟)。
若使成為藉由該載置步驟之實施，被保持於吸引墊54之矽晶圓10抵接於第2挾盤載置台60之狀態時(參照圖7(b))，來自吸引手段之負壓不作用於第2挾盤載置台60之保持面62，截斷作用於吸引墊54之吸引力。另外，該截斷並不限定於使成為物理性地截斷被連接於吸引墊54之吸引路徑而不作用吸引力之情形，包含停止無圖示之吸引手段所具備之吸引泵之情況等，使成為從 吸引墊54對矽晶圓10不作用吸引力之狀態所有。依此，矽晶圓10也不被該吸引墊54及第2挾盤載置台60中之任一者吸引，成為被吸引墊54和第2挾盤載置台60物理性地挾持之狀態(挾持步驟)。
於實行上述挾持步驟之後，使第2挾盤載置台60之保持面62作用無圖示之吸引手段之吸引力，吸引矽晶圓10之保護膠帶20側。若矽晶圓10被吸引至第2挾盤載置台60之上時，使搬運臂52上升而使吸引墊54遠離矽晶圓10之背面10b(參照圖7(d))，成為矽晶圓10僅被第2挾盤載置台60吸引保持之狀態(保持步驟)。藉由實行上述載置步驟、挾持步驟、保持步驟，該搬運工程完成。
如圖8所示般，研削裝置6具備用以研削被載置於第2挾盤載置台60上之矽晶圓10使予以薄化之研削手段70。研削手段70具備藉由無圖示之旋轉驅動機構迫使旋轉之旋轉軸72，和被安裝於該旋轉軸72之下端的固定座74，和被安裝於該固定座74之下面的研削砂輪76，在研削砂輪76之下面環狀地配設有研削砥石78。
當該搬運工程完成，使矽晶圓10吸引保持在第2挾盤載置台60上時，邊使第2挾盤載置台60以例如300rpm朝圖8(a)中以箭頭60a所示之方向旋轉，邊使旋轉軸72以例如3400rpm朝圖8(a)中以箭頭72a所示之方向旋轉。而且，使研削砥石78接觸於矽晶圓10之背面10b，以例如1μm/秒之研削進給速度，在相對於下方，即 是第2挾盤載置台60之保持面62呈垂直之方向研削進給特定量。此時，可以一面藉由無圖示之接觸式之測量計測量矽晶圓10之厚度，一面進行研削，矽晶圓10之背面10b被研削，研削進行至矽晶圓10之厚度成為例如60μm為止。另外，此時，因矽晶圓10沿著所有分割預定線14而形成改質層，形成脆弱之層，故藉由研削動作時之推壓力，被分割成各個裝置12，同時從表面10a被形成在70μm之位置的改質層10c被除去而完成研削(參照圖8(b))。當該研削工程結束時，送至拾取適當被分割之各個裝置12的工程等。
本發明藉由被構成上述般，可如下述般具有特別的效果。
在將矽晶圓10搬運至載置矽晶圓10之研削裝置6之第2挾盤載置台60之搬運工程中，使被保持在吸引墊54之矽晶圓10抵接於第2挾盤載置台60之保持面62之後，使吸引力作用於第2挾盤載置台之前，截斷作用於吸引墊54之吸引力，使成為也不從吸引墊54及第2挾盤載置台60中之任一者吸引矽晶圓10，並且以吸引墊54和第2挾盤載置台60物理性地被挾持之狀態。依此，藉由被吸引保持在吸引墊54，產生在矽晶圓10之內部的內部應力暫時完全地被釋放。而且，因矽晶圓10被吸引墊54和第2挾盤載置台60物理性地挾持，故也不會引起位置偏移等，藉由第2挾盤載置台60被吸引保持。因此，在該研削工程中，即使一面作用推壓力，一面實行研削，亦 不會產生無意圖之破裂現象，防止被形成在矽晶圓10上之裝置12部分性地被破壞，無使生產效率惡化之情形。
另外，在本實施型態中，當將矽晶圓從雷射加工裝置之第1挾盤載置台搬運至研削裝置之第2吸盤載置台之時，雖然藉由搬運手段所具備之吸引墊，進行搬出工程及搬運工程，但本發明並不限定於此。例如，也包含實行在搬出工程之吸引墊從雷射加工裝置之第1挾盤載置台搬出矽晶圓之後，暫時在另外之載置台載置該矽晶圓，以與在搬出工程中所使用之吸引墊不同的吸引墊吸引其矽晶圓，實施搬運至在研削工程中被使用之第2挾盤載置台的搬運工程。此時，應從該另外的載置台搬運至該第2挾盤載置台，實行與上述之實施型態相同之搬運工程。
在本實施型態中，雖然採用矽晶圓以作為被加工物，但是本發明並不限定於此，若為於實行沿著分割預定線而在晶圓內部形成改質層之改質層形成工程之後，實施研削工程而被薄化，同時由能夠分割成各個裝置之材料所構成之晶圓時，即使對任何材料之晶圓亦可以實行，例如亦可適用於藍寶石、碳化矽(SiC)、LT(鉭酸鋰)、LN(鈮酸鋰)等所構成之晶圓。
10‧‧‧矽晶圓
50‧‧‧搬運手段
52‧‧‧搬運臂
54‧‧‧吸引墊
56‧‧‧吸引部
60‧‧‧第2挾盤載置台

Claims (1)

  1. 一種晶圓之加工方法，其係將複數之裝置藉由交叉被形成的複數之分割預定線被區劃且被形成在表面的晶圓分割成各個裝置晶片，其特徵在於具備保護膠帶黏貼工程，其係在晶圓之表面黏貼保護膠帶；保持工程，其係在具有吸引保持晶圓之保持面之第1挾盤載置台，保持晶圓之保護膠帶側；改質層形成工程，其係從晶圓之背面，將相對於晶圓具有穿透性之波長之雷射光線之聚光點定位在與分割預定線對應之晶圓內部而予以照射，沿著分割預定形成改質層；搬出工程，其係藉由具備吸引保持晶圓之吸引墊之搬運手段，吸引保持被保持在該第1挾盤載置台之晶圓之背面，且從該第1挾盤載置台搬出；搬運工程，其係藉由該搬運手段，將晶圓搬運至具有吸引保持晶圓之保持面的第2挾盤載置台，在該保持面保持晶圓之保護膠帶側而使該搬運手段之吸引墊遠離晶圓之背面；及研削工程，研削被吸引保持於該第2挾盤載置台之晶圓之背面使予以薄化，同時將晶圓分割成各個裝置晶片；該搬運工程包含：載置工程，其係將被保持於該搬運手段之吸引墊的晶 圓載置在該第2挾盤載置台之保持面；挾持工程，其係截斷該吸引墊之吸引力，且以該吸引墊和該保持面挾持晶圓；和保持工程，其係實行該挾持工程之後，使該保持面作用吸引力，且使該保持面吸引保持晶圓之保護膠帶側而使該吸引墊遠離晶圓之背面。
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