TWI710069B - Method for producing organic resin substrate, organic resin substrate and semiconductor device - Google Patents

Abstract

According to the present invention, there is provided a method for manufacturing an organic resin substrate, which sequentially includes: forming a first metal pattern (50) on a base substrate (10); forming a first organic resin pattern (50) covering the first metal pattern (50). The step of the resin film (200); the step of grinding the first organic resin film (200) to remove it, and exposing the upper surface of the first metal pattern (50); and using the same as the first metal pattern (50) The step of forming the conductor part (230) in a manner of at least a part of the contact.

Description

Manufacturing method of organic resin substrate, organic resin substrate and semiconductor device

The present invention relates to a method for manufacturing an organic resin substrate, an organic resin substrate and a semiconductor device.

With the miniaturization and high performance of electronic equipment in recent years, the high-density integration of electronic parts, and the rapid development of high-density packaging. Along with this, there is a demand for higher density wiring and multiple terminals than ever before for the wiring board of the semiconductor package carrying the electronic components, and further reduction in manufacturing cost is required.

Conventionally, as the wiring substrate of the above-mentioned semiconductor package, a build-up substrate having a core layer can be cited. Furthermore, in the above-mentioned representative manufacturing process of the build-up substrate with the core layer, a step of forming multilayer wiring by build-up method on both sides of the core layer is performed (for example, Patent Document 1, etc.).

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Publication No. 2011-114294

As described in the above-mentioned prior art, various researches have been conducted in order to achieve high-density wiring, multi-terminalization, and reduction of manufacturing costs in the conventional manufacturing process of wiring boards. However, in recent years, the technical level required for wiring boards has become higher and higher. Therefore, in the conventional wiring board manufacturing process, there is room for improvement from the viewpoint of manufacturing a wiring board with excellent electrical connectivity and miniaturization with good yield.

Therefore, the present invention provides a method for manufacturing an organic resin substrate with excellent electrical connectivity and miniaturization that can be used in the manufacture of semiconductor devices with good yield, an organic resin substrate obtained by the method, and the use of the organic resin substrate The semiconductor device.

According to the present invention, there is provided a method for manufacturing an organic resin substrate, which sequentially includes: forming a first metal pattern on a base substrate; forming a first organic resin film covering the first metal pattern; and grinding the first metal pattern. The step of removing the organic resin film and exposing the upper surface of the first metal pattern; and the step of forming the first conductor portion so as to be in contact with at least a part of the first metal pattern.

Furthermore, according to the present invention, there is provided a method of manufacturing an organic resin substrate, which sequentially includes the steps of forming a first metal pattern on a base substrate; A step of forming a first conductor part in contact with at least a part of the first metal pattern; a step of forming a first organic resin film covering the first metal pattern and the first conductor part; and grinding the first organic resin The step of removing the film and exposing the upper surface of the first conductor part.

Furthermore, according to the present invention, there is provided an organic resin substrate manufactured by the above-mentioned method for manufacturing an organic resin substrate.

Furthermore, according to the present invention, there is provided a semiconductor device containing the above-mentioned organic resin substrate.

According to the present invention, it is possible to provide a method for manufacturing an organic resin substrate with excellent electrical connectivity and miniaturization that can be used in the manufacture of semiconductor devices with good yield, the organic resin substrate obtained by the method, and the use of the organic resin substrate The semiconductor device.

10‧‧‧Base substrate

20‧‧‧Insulation layer/insulating resin film

30‧‧‧Opening

40‧‧‧Plating film

50‧‧‧The first metal pattern

110‧‧‧The first metal film

170‧‧‧Organic resin film

200‧‧‧The first organic resin film

210‧‧‧Insulating resin film

220‧‧‧Opening

230‧‧‧The first conductor part

300‧‧‧The second organic resin film

350‧‧‧The second metal pattern

400‧‧‧The third organic resin film

450‧‧‧Second conductor part

500‧‧‧The fourth organic resin film

600‧‧‧Solder bump

650‧‧‧Semiconductor components

700‧‧‧Sealing resin

1000‧‧‧Organic resin substrate

1100‧‧‧Organic resin substrate

1200‧‧‧Organic resin substrate

1400‧‧‧Semiconductor device

1500‧‧‧Semiconductor device

FIG. 1 is a diagram for explaining an example of a method of manufacturing an organic resin substrate according to the first embodiment.

Fig. 2 is a diagram for explaining an example of the method of manufacturing the organic resin substrate of the first embodiment.

Fig. 3 is a diagram for explaining an example of the method of manufacturing the organic resin substrate of the first embodiment.

Fig. 4 is a diagram for explaining an example of a method of manufacturing an organic resin substrate according to a second embodiment.

FIG. 5 is a diagram for explaining an example of the manufacturing method of the semiconductor device of the third embodiment.

Fig. 6 is a diagram for explaining an example of a method of manufacturing an organic resin substrate according to a fourth embodiment.

Fig. 7 is a diagram for explaining an example of a method of manufacturing an organic resin substrate according to a fifth embodiment.

FIG. 8 is a diagram for explaining an example of the manufacturing method of the semiconductor device of the seventh embodiment.

[First Embodiment]

This embodiment relates to a method of manufacturing an organic resin substrate. The manufacturing method of the organic resin substrate (hereinafter referred to as the manufacturing method) includes the following four steps in order. The first step is a step of forming a first metal pattern on a base substrate (hereinafter referred to as a metal pattern forming step). The second step is a step of forming a first organic resin film covering the first metal pattern (hereinafter referred to as an organic resin film forming step). The third step is a step of polishing and removing the first organic resin film to expose the upper surface of the first metal pattern (hereinafter referred to as the organic resin film removal step). The fourth step is a step of forming a conductor portion in contact with at least a part of the first metal pattern (hereinafter referred to as a conductor portion forming step).

Hereinafter, the above-mentioned steps will be described with reference to FIGS. 1 to 3. In addition, FIGS. 1 to 3 are all diagrams for explaining an example of the manufacturing method of the organic resin substrate of this embodiment.

(Metal pattern forming step)

The step of forming the metal pattern of this embodiment will be described with reference to FIG. 1.

In this embodiment, the state where the metal pattern is a metal wiring is described. In this embodiment, the opening provided in the insulating resin film for forming the metal pattern is a trench (trench). Moreover, the opening part provided in the insulating resin film in order to form a conductor part is a via hole.

First, as shown in FIG. 1(a), a base substrate 10 is prepared. The base substrate 10 is made in the following In the manufacturing step, it is used as a support member for maintaining the flatness of each layer constituting the organic resin substrate. The base substrate 10 is finally separated and removed from the obtained organic resin substrate as described below. Such a base substrate 10 preferably has characteristics such as flatness, rigidity, and heat resistance. In addition, as the base substrate 10, for example, a metal plate can be used. Specific examples of the metal plate include copper plates, aluminum plates, iron plates, steel plates, nickel plates, copper alloy plates, 42 alloy plates, stainless steel plates, and the like. Furthermore, the above-mentioned steel (steel) plate may also be a cold-rolled rigid plate such as SPCC (Steel Plate Cold Commercial, cold rolled steel plate). In addition, the metal plate may be in the form of a single piece processed into a frame shape or in the form of a ring.

Next, as shown in FIG. 1(b), an insulating layer 20 (hereinafter also referred to as an insulating resin film 20) is laminated on the base substrate 10. In addition, the details of the material for forming the insulating resin film 20 will be described later, and for example, a photosensitive resin composition can be used. In addition, as a method for laminating the insulating resin film 20 on the base substrate 10, a method according to the form of the material for forming the insulating resin film 20 can be suitably adopted. When the material for forming the insulating resin film 20 is in liquid form, for example, the material is coated on the base substrate 10 using a coater or spinner, and then dried to form the desired insulation.性resin film 20. In the case where the material for forming the insulating resin film 20 is in a paste form, for example, a printing process or the like is performed to apply the material on the base substrate 10 and then dry it to form the desired insulating resin film 20 . In the case where the material for forming the insulating resin film 20 is in the form of a dry film, for example, by laminating the film on the base substrate 10 by thermocompression bonding with a laminator or the like, the desired insulation can be formed Resin film 20.

Next, as shown in FIG. 1(c), an opening 30 is provided in a specific area of the insulating resin film 20 on the base substrate 10. In other words, by removing the metal supply from the insulating resin film 20 In the area where the pattern is formed, the insulating resin film 20 on the base substrate 10 is provided with a groove (trench) having a pattern corresponding to the target metal wiring. In this embodiment, this groove corresponds to the opening 30. As a method of forming the opening 30, an exposure and development method, a laser processing method, or the like can be cited. When the exposure and development method is used, the insulating resin film 20 must contain a photosensitive agent. In the exposure and development method, first, light is selectively irradiated to either the area where the opening 30 is formed or the area where the opening 30 is not formed in the insulating resin film 20. After that, development is performed using a developer such as an alkaline aqueous solution, whereby the opening 30 can be formed. After that, the insulating resin film 20 is thermally cured. As the above-mentioned exposure method, a method of closely adhering a mask pattern and irradiating ultraviolet rays or a method of directly irradiating a desired area with laser light can be cited. On the other hand, when a laser processing method is used to form the opening 30, laser light is directly irradiated to the area where the opening 30 is provided, and the insulating resin film 20 is selectively removed by the energy of the laser light. In this case, the insulating resin film 20 does not need to contain a photosensitizer, and the light transmittance is also unlimited.

Next, as shown in FIG. 1( d ), a plating film 40 is formed on the insulating resin film 20 so that the opening 30 provided in the insulating resin film 20 is filled with the plating film 40. As a method of forming the plating film 40, a known method can be used, and methods such as an electrolytic plating method or an electroless plating method can be used. For example, a method of filling the opening 30 provided in the insulating resin film 20 with copper plating by copper electroplating can be used. Examples of materials for forming the above-mentioned plating film 40 include copper, copper alloy, 42 alloy, nickel, iron, chromium, tungsten, gold, solder, and the like.

Next, as shown in FIG. 1(e), the plating film 40 is removed, and the first metal pattern 50 is formed. In the step of removing the plating film 40, the plating film 40 formed on the insulating resin film 20 is removed by polishing until the upper surface of the insulating resin film 20 is exposed, and the plating film 40 filled in the opening 30 is not Is removed and remains. As a result, the first one embedded in the insulating resin film 20 can be formed Metal pattern 50. As a method of polishing the plating film 40, polishing using a chemical mechanical polishing (CMP) device can be mentioned. In this embodiment, the first metal pattern 50 may be a metal wiring.

Next, as shown in FIG. 1(f), the insulating resin film 20 on the base substrate 10 is removed. As a method of removing the insulating resin film 20, for example, a method of peeling the insulating resin film 20 using a peeling solution, a method of removing the insulating resin film 20 by an ashing treatment, and a method of removing the insulating resin film 20 after performing the ashing treatment. The peeling liquid removes the residue of the insulating resin film 20 attached to the base substrate 10, etc. Among them, from the viewpoint of improving the production efficiency of the organic resin substrate, a method of peeling the insulating resin film 20 using a peeling liquid is preferable. In addition, specific examples of the above-mentioned peeling liquid include organic sulfonic acid peeling liquid containing alkylbenzene sulfonic acid, organic amine peeling liquid containing organic amines such as monoethanolamine, and organic alkali or fluorine-based compound mixed with water. The obtained water-based resist stripping solution.

(Organic resin film formation step and organic resin film removal step)

The organic resin film forming step and the polishing step of this embodiment will be described with reference to FIG. 2.

First, as shown in FIG. 2(a), a resin composition for forming an organic resin film is used to cover the first metal pattern 50 formed on the base substrate 10 to form a first metal pattern 50 on the entire area of the base substrate 10. Organic resin film 200. In addition, the details of the resin composition for forming an organic resin film will be described later. For example, a resin composition containing a thermosetting resin can be used. In this embodiment, the method for forming the first organic resin film 200 is not particularly limited, and examples include a transfer molding method, a compression molding method, an injection molding method, and a lamination method. Among them, in order to cover the first metal pattern 50 with a resin composition without leaving an unfilled portion on the base substrate 10, a transfer molding method, a compression molding method, or a lamination method is preferable. Therefore, there is The resin composition for forming an organic resin film is preferably in the form of pellets, tablets or sheets. Furthermore, when the first organic resin film 200 is formed by a compression molding method, a resin composition in the form of powder particles may also be used.

Hereinafter, a case where the first organic resin film 200 is formed using the resin composition for forming an organic resin film in a particulate form will be exemplified, and the organic resin film formation step will be described in detail.

Specifically, between the upper mold and the lower mold of the compression molding mold, a resin material supply container containing a pelletized resin composition for forming an organic resin film is provided. Next, the base substrate 10 having the first metal pattern 50 shown in FIG. 1(f) is fixed to one of the upper mold and the lower mold of the compression molding mold by a fixture or a fixing means such as suction. Hereinafter, a case where the surface having the first metal pattern 50 faces the resin material supply container will be fixed to the upper mold of the compression molding mold.

First, under reduced pressure, the gap between the upper mold and the lower mold of the mold is reduced, and a resin material supply mechanism such as a baffle provided on the bottom surface of the resin material supply container is used to form a weighed granular organic resin film The resin composition is supplied into the lower cavity of the lower mold. Thereby, the resin composition for forming a pelletized organic resin film is heated to a predetermined temperature in the lower cavity, and becomes a molten state. Next, by combining the upper mold and the lower mold of the mold, the base substrate 10 fixed to the upper mold is pressed against the resin composition for forming an organic resin film in a molten state. Thereby, the first metal pattern 50 can be filled with the resin composition for forming an organic resin film, and the surface on which the first metal pattern 50 is formed can be covered with the resin composition for forming an organic resin film in a molten state in the base substrate 10. After that, the state where the upper mold and the lower mold of the mold are combined is maintained, and the resin composition for forming an organic resin film is cured.

Here, in the case of compression molding, it is better to perform pressure reduction in the mold Resin sealing, more preferably under vacuum. Thereby, without leaving an unfilled portion on the base substrate 10, the first metal pattern 50 can be covered with the resin composition for forming an organic resin film.

The molding temperature during compression molding is not particularly limited, but is preferably 50 to 200°C, particularly preferably 80 to 180°C. In addition, the molding pressure is not particularly limited, but is preferably 0.5 to 12 MPa, particularly preferably 1 to 10 MPa. Furthermore, the molding time is preferably 30 seconds to 15 minutes, particularly preferably 1 to 10 minutes. By setting the molding temperature, pressure, and time within the above-mentioned ranges, it is possible to prevent the generation of the resin composition for forming an organic resin film in an unfilled molten state on the base substrate 10.

In addition, the glass transition temperature of the first organic resin film 200 obtained by the above method is preferably 100°C or higher and 250°C or lower, and more preferably 130°C or higher and 220°C or lower. If the glass transition temperature of the first organic resin film 200 is within the above range, the warpage of the obtained organic resin substrate can be reduced.

Next, as shown in FIG. 2(b), the entire surface of the first organic resin film 200 is polished to remove it, and the upper surface of the first metal pattern 50 is exposed. As a method of polishing the first organic resin film 200, a method using a chemical mechanical polishing (CMP) device, etc. can be cited. In addition, when polishing the first organic resin film 200 with a CMP device, the type of abrasive grains or additives contained in the polishing agent used, the material or hardness of the polishing pad included in the CMP device, and other conditions are adjusted. The flatness of the surface of the first organic resin film 200 can be controlled.

(Conductor part formation step)

The conductor part formation step of this embodiment will be described with reference to FIG. 3. Examples of the conductor part in this manufacturing method include metal wiring, metal pads, or solder bumps. Hereinafter, a case where the conductor part is a metal pad is exemplified, and the steps of forming the conductor part are described in detail.

First, as shown in Figure 3 (a), to cover the exposed top surface of the first metal pattern 50 Formula, the insulating resin film 210 is laminated on the first organic resin film 200 and the first metal pattern 50. Furthermore, the material for forming the insulating resin film 210 can be the same material as the material for forming the insulating resin film 20 described with reference to FIG. 1(b).

Next, as shown in FIG. 3(b), an opening 220 is provided in a predetermined area of the insulating resin film 210 so that a part of the first metal pattern 50 is exposed. The method of forming the opening 220 can be the same as the method of forming the opening 30 described with reference to FIG. 1(c). Among them, the opening 220 for making the metal pad is a through hole, and the opening 30 for making the first metal pattern (metal wiring) is a trench.

Next, as shown in FIG. 3(c), the opening 220 provided in the insulating resin film 210 is filled with a conductive material to form the first conductor 230. Specifically, the method of forming the first metal pattern 50 described with reference to FIGS. 1(d) and 1(e) is the same as that of filling the opening 220 provided in the insulating resin film 210 with a conductive material. A conductive material layer is formed on the insulating resin film 210. Next, by polishing the conductive material layer, the conductive material layer is removed until the upper surface of the insulating resin film 210 is exposed. As a result, the first conductor portion 230 in contact with the exposed surface of the first metal pattern 50 is formed. Here, as the above-mentioned conductive material, metals such as copper, copper-based alloys, aluminum, and aluminum-based alloys, and alloys thereof can be cited. Among them, from the viewpoint of improving the electrical properties of the obtained organic resin substrate, it is preferable to use copper or a copper-based alloy as the conductive material.

Next, as shown in FIG. 3(d), the insulating resin film 210 is removed. As a method of removing the insulating resin film 210, the same method as the method described above with reference to FIG. 1(f) can be used.

Next, as shown in FIG. 3(e), a resin composition for forming an organic resin film is used on the first organic resin film 200 and the first metal pattern 50 to cover the first conductor portion 230 In this way, the second organic resin film 300 is formed. The method for forming the second organic resin film 300 can be the same as the method described above with reference to FIG. 2(a).

Then, as shown in FIG. 3(f), the entire surface of the second organic resin film 300 is polished to remove it, and the upper surface of the first conductor portion 230 is exposed. As a method of polishing the entire surface of the second organic resin film 300, a method using a chemical mechanical polishing (CMP) device or the like can be mentioned.

Next, as shown in FIG. 3(g), the base substrate 10 is selectively removed by separation to obtain an organic resin substrate 1000 having a two-layer structure. Furthermore, the above-mentioned selective removal of the base substrate 10 refers to the removal of part or all of the base substrate 10. As a method of removing the base substrate 10, a method of chemical etching using an acidic liquid or an alkaline liquid, a method of physical polishing, a method of physical peeling, a plasma irradiation method, a laser ablation method, etc. may be mentioned. Among them, the method of chemical etching using acidic liquid or alkaline liquid is preferred. In addition, as specific examples of the acidic liquid used at this time, a mixed acid, an aqueous solution of ferric chloride, and the like can be cited.

Hereinafter, the effect of this manufacturing method will be described.

According to this manufacturing method, compared with the conventional manufacturing process, it is possible to manufacture an organic resin substrate that is excellent in electrical connectivity and can be used in the manufacture of semiconductor devices in a smaller size with good yield. In addition, according to the manufacturing method, the amount of materials used for forming the metal pattern or the conductive portion can be reduced, and therefore, the manufacturing cost can be reduced compared with the conventional manufacturing process. In addition, according to the present manufacturing method, the durability of the organic resin film can be improved, and therefore, compared with the conventional manufacturing process, a wiring board with excellent mechanical strength can be manufactured. Moreover, the reliability of the semiconductor device using the organic resin substrate manufactured by this manufacturing method is excellent.

[Second Embodiment]

This embodiment relates to a method of manufacturing a multilayer wiring board. The manufacturing method is from Figure 3(f) As shown, a structure of an organic resin substrate 1000 composed of a first organic resin film 200, a first metal pattern 50, a second organic resin film 300, and a first conductor 230 is formed on a base substrate 10 to manufacture a multilayer wiring board. Specifically, in the manufacturing method of this embodiment, on the structure shown in FIG. 3(f), the second metal pattern 350 and the third metal pattern 350 are sequentially formed by the same method as the method of the first embodiment. The organic resin film 400, the second conductor part 450 and the fourth organic resin film 500. In this embodiment, the same effect as the first embodiment can also be obtained.

Hereinafter, the manufacturing method of this embodiment will be described with reference to FIG. 4. Furthermore, the manufacturing method of the 4-layer structure organic resin substrate 1200 will be described later, but the manufacturing method of this embodiment is not limited to the 4-layer structure multilayer wiring board.

First, as shown in FIG. 4(a), a second metal pattern 350 is formed on the structure shown in FIG. 3(f). Furthermore, the method of forming the second metal pattern 350 can be the same as the method of forming the first metal pattern 50 described with reference to FIG. 1.

Next, as shown in FIG. 4(b), the third organic resin film 400 is formed so as to cover the second metal pattern 350 using the resin composition for forming an organic resin film. The method of forming the third organic resin film 400 can be the same as the method of forming the first organic resin film 200 described with reference to FIG. 2(a). Next, the third organic resin film 400 is polished and removed, so that the upper surface of the second metal pattern 350 is exposed. This step can be implemented using the method described with reference to FIG. 2(b).

Next, as shown in FIG. 4(c), the second conductor part 450 is formed so as to be in contact with at least a part of the second metal pattern 350. The method of forming the second conductor portion 450 can be the same as the method of forming the first conductor portion 230 described with reference to FIGS. 3(a) to (c).

Secondly, as shown in Figure 4(d), use a resin composition for forming an organic resin film On the third organic resin film 400 and the second metal pattern 350, the fourth organic resin film 500 is formed so as to cover the second conductor part 450. The method for forming the fourth organic resin film 500 can be the same as the method for forming the first organic resin film 200 described with reference to FIG. 2(a). Next, the third organic resin film 400 is polished and removed, so that the upper surface of the second conductor part 450 is exposed. This step can be implemented using the method described with reference to FIG. 2(b).

After that, as shown in FIG. 4(e), the base substrate 10 is separated and removed to obtain an organic resin substrate 1200 with a four-layer structure. Furthermore, when manufacturing a multilayer organic resin substrate with more than 4 layers, it is only necessary to form each layer on the structure shown in Figure 4(d) by the same method as the method described with reference to Figures 1 to 3 The metal pattern, the conductor part, and the organic resin film are sufficient.

[Third Embodiment]

This embodiment relates to a method of manufacturing a semiconductor device. The manufacturing method will be described with reference to FIG. 5. Hereinafter, the manufacturing method of the semiconductor device of the present embodiment will be described by exemplifying a case where a semiconductor device is manufactured from the organic resin substrate 1200 shown in FIG. 4(e). In this embodiment, the same effect as the first embodiment can also be obtained.

First, as shown in FIG. 5(a), the exposed surface of the second conductor portion 450 of the organic resin substrate 1200 is melted and the end of the solder bump 600 is fused.

Next, as shown in FIG. 5(b), the semiconductor element 650 is arranged and fixed on the organic resin substrate 1200 via the solder bump 600. In addition, on the organic resin substrate 1200, in addition to the semiconductor element 650, for example, electronic components that function as a resistor or a capacitor may be further arranged. As the above-mentioned semiconductor element 650, an LSI wafer diced from a semiconductor wafer or the like can be cited. In addition, the second conductor portion 450 of the organic resin substrate 1200 and the connection pad of the semiconductor element 650 are electrically connected by solder bumps 600. Also, the connection between the second conductor 450 and the semiconductor element 650 The electrical connection of the pad can also use bonding wires or wires instead of the solder bumps 600.

Next, as shown in FIG. 5(c), the upper surface of the organic resin substrate 1200, the solder bump 600, and the semiconductor element 650 are molded with a sealing resin 700 so as to cover the surface connected to the solder bump 600 ( mold). As the sealing resin 700, for example, a resin composition containing epoxy resin or the like can be used. As a method of molding with the sealing resin 700, a transfer molding method, an injection molding method, a transfer method, a coating method, etc. can be used. The sealing resin is cured by heating, for example, at 150°C or higher and 200°C or lower. In this way, the semiconductor device 1400 of this embodiment can be manufactured.

[Fourth Embodiment]

This embodiment relates to a method of manufacturing an organic resin substrate. The method of forming the first metal pattern 50 in this manufacturing method is different from that of the first embodiment. Specifically, the present manufacturing method differs from the first embodiment in that the following method is adopted: after the first metal film 110 is formed on the base substrate 10, the predetermined area of the first metal film 110 is selectively removed. The first metal film 110 forms the first metal pattern 50. However, in this embodiment, the same effect as the first embodiment can also be obtained. Furthermore, according to this manufacturing method, the manufacturing steps of the metal pattern can be simplified, so the manufacturing efficiency of the organic resin substrate can be improved. Furthermore, this manufacturing method can also be used in the case of manufacturing a multilayer wiring board.

The metal pattern forming step of this manufacturing method will be described with reference to FIG. 6.

First, as shown in FIG. 6(a), a base substrate 10 is prepared. As the base substrate 10, the same substrate as in the first embodiment can be used. Next, as shown in FIG. 6(b), a first metal film 110 is laminated on the base substrate 10. Next, as shown in FIG. 6(c), the first metal film 110 is selectively removed to obtain the first metal film 110 having the first metal pattern. The first metal film with a predetermined pattern as Metal wiring functions. As a method of selectively removing a predetermined area of the first metal film 110 to form a metal pattern, it is possible to use methods such as etching commonly used in this field.

[Fifth Embodiment]

This embodiment relates to a method of manufacturing an organic resin substrate. This manufacturing method contains the following 4 steps in sequence. The first step is a step of forming a first metal pattern on a base substrate (hereinafter referred to as a first metal pattern forming step). The second step is a step of forming a conductor portion in contact with at least a part of the first metal pattern (hereinafter referred to as a conductor portion forming step). The third step is a step of forming a first organic resin film covering the first metal pattern and the first conductor portion (hereinafter referred to as an organic resin film forming step). The fourth step is a step of grinding the entire surface of the first organic resin film to remove it, and exposing the upper surface of the first conductor portion (hereinafter referred to as the organic resin film removal step). This manufacturing method is different from the first embodiment in that the first organic resin film is formed after the first metal pattern and the first conductor portion are formed. However, in this embodiment, the same effect as the first embodiment can also be obtained. Furthermore, according to the manufacturing method of this embodiment, the first metal pattern and the first conductor portion can be covered integrally with the resin composition for forming an organic resin film, so the mechanical strength of the organic resin substrate can be improved.

This manufacturing method will be described in detail with reference to FIG. 7. Furthermore, FIG. 7 is a diagram for explaining an example of the manufacturing method of the organic resin substrate of this embodiment.

First, as shown in FIG. 7(a), a base substrate 10 having an insulating resin film 20 in which a first metal pattern 50 is formed is prepared (as shown in FIG. 1(e)). In this embodiment, the same method as the method described with reference to FIG. 1 can be used, except that the insulating resin film 20 is not removed and remains after the first metal pattern 50 is formed.

Secondly, as shown in FIG. 7(b), with at least a part of the first metal pattern 50 The first conductor part 230 is formed in a divided contact manner. The method of forming the first conductor portion 230 is the same as the method described with reference to FIGS. 3(a) to (c). In this embodiment, the same method as the method described with reference to FIGS. 3(a) to (c) can be used except that the insulating resin film 210 is not removed and remains after the first conductor portion 230 is formed.

Next, as shown in FIG. 7(c), the insulating resin films 20 and 210 are removed. The method of removing the insulating resin films 20 and 210 can be the same as the method of removing the insulating resin film 20 described with reference to FIG. 1(f).

Next, as shown in FIG. 7(d), the organic resin film 170 is formed so as to cover the first metal pattern 50 and the first conductor portion 230 using the resin composition for forming an organic resin film. Thereby, the first metal pattern 50 and the first conductor portion 230 can be covered integrally with the resin composition for forming an organic resin film. Furthermore, the method for forming the organic resin film 170 can be the same as the method for forming the first organic resin film 200 described with reference to FIG. 2(a).

After that, as shown in FIG. 7(e), the entire surface of the organic resin film 170 is polished and removed to expose the upper surface of the first conductor portion 230, as shown in FIG. 7(f), by removing the base substrate 10 is separated and removed to obtain an organic resin substrate 1100 with a two-layer structure.

[Sixth Embodiment]

This embodiment relates to a method of manufacturing a multilayer wiring board. This manufacturing method differs from the second embodiment in that it is a method of forming an organic resin film 170, a first metal pattern 50, and a first conductor portion 230 on the base substrate 10 as shown in FIG. 7(e) The structure of the organic resin substrate 1100 is fabricated on the above structure by the same method as that described in the fifth embodiment. The second metal pattern 350 and the second metal pattern 350 are integrally covered with the resin composition for forming an organic resin film. An organic resin substrate with a two-layer structure of layers of the conductor 450. To adopt the manufacturer In the case of the law, the same effect as the first embodiment can also be obtained.

[The seventh embodiment]

This embodiment relates to a method of manufacturing a semiconductor device. This manufacturing method will be described with reference to FIG. 8. Hereinafter, the method of manufacturing the semiconductor device of the present embodiment will be described with an example of manufacturing a semiconductor device from the organic resin substrate 1200 shown in FIG. 4(e). However, in this embodiment, the same effect as the first embodiment can also be obtained.

The manufacturing method of the semiconductor device of this embodiment is different from that of the third embodiment in that a semiconductor element 650 is arranged on the first metal pattern 50 of the organic resin substrate 1200 via solder bumps 600. Specifically, according to the manufacturing method of the semiconductor device of this embodiment, first, as shown in FIG. 8(a), the end of the solder bump 600 is melted and fused to the exposed surface of the first metal pattern 50. Next, as shown in FIG. 8( b ), the semiconductor element 650 is arranged and fixed on the organic resin substrate 1200 via the solder bump 600. Next, as shown in FIG. 8(c), the lower surface of the organic resin substrate 1200, the solder bump 600 and the semiconductor element 650 are molded with a sealing resin 700 so as to cover the surface connected to the solder bump 600. Thereby, the semiconductor device 1500 of this embodiment can be manufactured.

[Materials used in the manufacturing process of organic resin substrates]

Hereinafter, the structure of the material for forming the insulating resin film 20 or 210 and the resin composition for forming an organic resin film will be described.

<Material for forming insulating resin film 20 or 210>

As a material for forming the insulating resin film 20 or 210, a known material used for a plating resist can be used, for example, photosensitive materials such as photoresist, resist ink, and dry film can be cited. In addition, the above-mentioned photosensitive resin composition may be negative or positive.

<Resin composition for forming organic resin film>

The resin composition for forming an organic resin film preferably contains a thermosetting resin and a filler. As the thermosetting resin, epoxy resin is preferably used. As the above-mentioned epoxy resin, regardless of its molecular weight and molecular structure, all monomers, oligomers, and polymers having two or more epoxy groups in one molecule can be used. As a specific example of such an epoxy resin, it may contain selected from bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol E epoxy resin, bisphenol S epoxy resin, hydrogenated bisphenol A Type epoxy resin, bisphenol M type epoxy resin (4,4'-(1,3-phenylenediisopropylidene) bisphenol type epoxy resin), bisphenol P type epoxy resin (4,4'-(1,4-phenylene diisopropylene) bisphenol epoxy resin), bisphenol Z epoxy resin (4,4'-cyclohexadiene bisphenol epoxy Resin) and other bisphenol type epoxy resin; phenol novolak type epoxy resin, brominated phenol novolak type epoxy resin, cresol novolak type epoxy resin, tetraphenol ethane type novolak type epoxy resin, Novolac type epoxy resins such as novolac type epoxy resins with condensed ring aromatic hydrocarbon structure; biphenyl type epoxy resins; aralkyl type epoxy resins, biphenyl aralkyl type epoxy resins, etc. Type epoxy resin; naphthalene ether type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthalene glycol type epoxy resin, difunctional to tetrafunctional epoxy type naphthalene resin, binaphthyl type epoxy resin , Naphthalene aralkyl type epoxy resin and other epoxy resins with naphthalene skeleton; anthracene type epoxy resin; phenoxy type epoxy resin; dicyclopentadiene type epoxy resin; norbornene type epoxy resin; Adamantane type epoxy resin; Chrysanthemum type epoxy resin, phosphorus-containing epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, bisphenol A novolac type epoxy resin, bixylenol type ring Heterocyclic epoxy resins such as oxy resin, trihydroxyphenylmethane type epoxy resin, tetraphenol ethane type epoxy resin, triglycidyl isocyanate, etc.; N,N,N',N'-tetra Glycidylamines such as glycidyl m-xylene diamine, N,N,N',N'-tetraglycidyl diaminomethyl cyclohexane, N,N-diglycidyl aniline; Or (A (Base) Copolymer of glycidyl acrylate and compound with ethylenically unsaturated double bond, epoxy resin with butadiene structure, diglycidyl ether of bisphenol, diglycidyl ether of naphthalene glycol One or two or more of glycidyl ether compounds of phenols and phenols. Among these, from the viewpoint of improving the adhesion to the metal pattern or the conductor portion, it is more preferable to contain trihydroxyphenylmethane type epoxy resin and biphenyl type epoxy resin. In this way, low linear expansion and high elastic modulus of the organic resin substrate can also be achieved. In addition, the rigidity of the organic resin substrate can be improved, which contributes to the improvement of workability, or realizes the improvement of reflow resistance and the suppression of warpage in the semiconductor device.

The content of the epoxy resin is preferably, for example, 3% by mass or more, and more preferably 5% by mass or more with respect to the total solid content of the resin composition for forming an organic resin film. By setting the content of the epoxy resin to be more than the above lower limit value, it can contribute to improving the adhesion between the organic resin film formed using the resin composition for forming an organic resin film, the metal pattern, and the conductor. On the other hand, the content of the epoxy resin is preferably 30% by mass or less, and more preferably 20% by mass or less with respect to the total solid content of the resin composition for forming an organic resin film, for example. By setting the content of the epoxy resin to the above upper limit or less, the heat resistance or moisture resistance of the organic resin film formed using the resin composition for organic resin film formation can be improved. In addition, the total solid content of the resin composition for forming an organic resin film refers to all the components excluding the solvent contained in the resin composition for forming an organic resin film. The following is the same in this specification.

In addition, the resin composition for forming an organic resin film may contain a curing agent. Specifically, examples of the above-mentioned hardener include: ethylene diamine, trimethylene diamine, tetramethylene diamine, hexamethylene diamine, and other linear aliphatic diamines with 2 to 20 carbon atoms; m-phenylenediamine , P-phenylenediamine, p-xylene diamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4 ,4'-diaminodiphenyl sulfide, 4,4'-diaminodicyclohexane, bis(4-aminophenyl)phenylmethyl Alkane, 1,5-diaminonaphthalene, meta-xylene diamine, p-xylene diamine, 1,1-bis(4-aminophenyl)cyclohexane, dicyanodiamide and other amines ; Aniline-modified phenolic resin or dimethyl ether phenolic phenolic resin; phenol novolac resin, cresol novolak resin, tertiary butyl phenol novolak resin, nonyl phenol novolak resin Novolak-type phenol resins such as resins; phenol aralkyl resins containing phenylene skeletons, phenol aralkyl resins containing biphenylene skeletons, and other phenol aralkyl resins; with many condensations like naphthalene skeleton or anthracene skeleton Phenolic resin with ring structure; polyoxystyrene such as poly(p-hydroxystyrene); including hexahydrophthalic anhydride (HHPA), methyl tetrahydrophthalic anhydride (MTHPA), etc. Triacid anhydrides (TMA), pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic acid (BTDA) and other aromatic anhydrides; polysulfide, thioester, thioether and other polythiol compounds; isocyanate pre Isocyanate compounds such as polymers and blocked isocyanates; organic acids such as polyester resins containing carboxylic acids. These can be used individually by 1 type or in combination of 2 or more types. Among them, in terms of reliability, etc., a compound having at least two phenolic hydroxyl groups in one molecule is preferred. Examples of such compounds include phenol novolak resin, cresol novolak resin, Novolac type phenol resins such as tertiary butyl phenol novolac resin and nonyl phenol novolac resin; resol type phenol resin; polyoxystyrene such as poly(p-hydroxystyrene); phenol arylene containing phenylene skeleton Base resin, phenol aralkyl resin containing biphenyl skeleton, trihydroxyphenylmethane type phenol resin, etc.

As a specific example of the filler used in the resin composition for forming the organic resin film, silicon dioxide such as molten crushed silicon dioxide, molten spherical silicon dioxide, crystalline silicon dioxide, and secondary condensed silicon dioxide can be cited; Alumina; Titanium Dioxide; Aluminum Hydroxide; Talc; Clay; Mica; Glass Fiber, etc. Among them, molten spherical silica is particularly preferred. In addition, the particle shape is not limited, but it is preferably a true spherical shape. In addition, by mixing particles with different sizes, the amount of inorganic filling can be increased, Regarding the average particle size d50, considering the filling property around the metal pattern in the mold cavity, it is desirably 0.1 μm or more and 20 μm or less.

In addition, the average particle size d50 of the filler can be measured using, for example, a laser diffraction particle size distribution measuring device (manufactured by Horiba, Ltd., LA-500).

The resin composition for forming an organic resin film may contain a cyanate resin, for example. Thereby, the low linear expansion of the organic resin film can be realized, and the elastic modulus and rigidity can be improved. In addition, it can also contribute to the improvement of the heat resistance or moisture resistance of the obtained semiconductor device.

The cyanate resin may contain, for example, bisphenol type selected from novolac type cyanate ester resin; bisphenol A type cyanate ester resin, bisphenol E type cyanate ester resin, tetramethyl bisphenol F type cyanate ester resin, etc. Cyanate resin; naphthol aralkyl cyanate resin obtained by the reaction of naphthol aralkyl phenol resin and cyanogen halide; dicyclopentadiene cyanate resin; biphenyl alkyl cyanide One or two or more of acid ester resins. Among them, from the viewpoint of improving the low linear expansion, elastic modulus and rigidity of the organic resin film, it is more preferable to contain at least one of the novolak type cyanate resin and the naphthol aralkyl type cyanate resin One, it is particularly preferable to contain a novolac type cyanate resin.

The content of the cyanate ester resin is preferably, for example, 3% by mass or more, and more preferably 5% by mass or more with respect to the total solid content of the resin composition for forming an organic resin film. By setting the content of the cyanate ester resin to be more than the above lower limit, the organic resin film formed using the resin composition for forming an organic resin film can be more effectively reduced in linear expansion and increased in elastic modulus. In addition, the adhesion between the organic resin film formed using the resin composition for forming an organic resin film, the metal pattern and the conductor can be improved. On the other hand, the content of the cyanate ester resin is preferably 30% by mass or less, and more preferably 20% by mass or less with respect to the total solid content of the resin composition for forming an organic resin film, for example. By setting the content of cyanate ester resin below the above upper limit, the use of organic resin can be realized The heat resistance or moisture resistance of the organic resin film formed from the resin composition for film formation is improved.

The resin composition for forming an organic resin film may contain a curing accelerator. The curing accelerator may be one that promotes the curing reaction between the epoxy group and the curing agent. Specifically, as the above-mentioned hardening accelerator, diazabicyclic olefins such as 1,8-diaza bicyclo(5,4,0)undecene-7 and their derivatives; tributylamine, benzyl Amine compounds such as dimethylamine; imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium tetraphenylboronic acid, tetraphenylphosphonium tetrabenzoic acid Boric acid, tetra-naphthoic acid boronic acid, tetra-naphthoyloxy boronic acid, tetraphenyl phosphonium tetranaphthoyloxy boronic acid and other tetra-substituted phosphonium tetra-substituted Boric acid; addition of triphenyl phosphine such as benzoquinone. These may be used individually by 1 type, and may be used in combination of 2 or more types. More preferably, the resin composition for forming a particulate organic resin film is melted in a mold cavity and a hardening accelerator with a small increase in viscosity.

In the above-mentioned resin composition for forming an organic resin film, in addition to the above-mentioned components, a coupling agent, a leveling agent, a coloring agent, a release agent, a low-stress agent, a photosensitizer, a defoaming agent, and ultraviolet rays may be added as necessary. One or two or more additives among absorbents, foaming agents, antioxidants, flame retardants, and ion scavengers. Examples of the coupling agent include: epoxy silane coupling agent, cationic silane coupling agent, amino silane coupling agent, γ-glycidoxy propyl trimethoxy silane coupling agent, phenyl amino propyl trimethoxy Silane coupling agents, mercaptosilane coupling agents and other silane coupling agents; titanate coupling agents and silicone oil coupling agents, etc. As a leveling agent, an acrylic copolymer etc. are mentioned. As a coloring agent, carbon black etc. are mentioned. Examples of mold release agents include natural waxes, synthetic waxes such as montanic acid esters, higher fatty acids or metal salts thereof, paraffin wax, and oxidized polyethylene. As the low stress agent, silicone oil, silicone rubber, etc. can be cited. As an ion scavenger, hydrotalcite etc. are mentioned. Examples of the flame retardant include aluminum hydroxide and the like.

As described above, the resin composition for forming an organic resin film is preferably in the form of pellets, ingots or sheets.

As a method of obtaining the above-mentioned pelletized resin composition, for example, there may be mentioned: supplying a melt-kneaded resin composition to the inside of a rotor composed of a cylindrical outer peripheral portion having a plurality of small holes and a disc-shaped bottom surface, by The method of obtaining the resin composition through small holes by the centrifugal force obtained by rotating the rotor (hereinafter also referred to as the "centrifugal powdering method"); each raw material component is pre-mixed by a mixer, and then a roller and a kneader Or a kneader such as an extruder is heated and kneaded, and then cooled and pulverized to obtain a pulverized product. The resulting pulverized product is obtained by removing coarse particles and fine powder using a sieve (hereinafter, also referred to as "grinding sieve Separate method”); After pre-mixing each raw material component with a mixer, use an extruder equipped with a die with multiple small diameters at the tip of the screw to heat and knead, and slide and rotate roughly parallel to the die surface The cutting machine cuts the molten resin that is extruded into a linear shape from a small hole arranged in a mold (hereinafter, also referred to as a "thermal cutting method"). In the case of using any method, by adjusting kneading conditions, centrifugal conditions, sieving conditions, cutting conditions, etc., a granular resin composition having a desired particle size distribution or particle density can be obtained. A particularly preferred production method is the centrifugal powdering method. With this production method, a granular resin composition having a desired particle size distribution and particle density can be produced stably. In addition, the pelletized resin composition can be transported without the pellets sticking to each other. In addition, because the particle surface of the granular resin composition obtained by the centrifugal powdering method is relatively smooth, there is no situation that the particles get stuck with each other or the frictional resistance with the conveying road surface becomes large, and there is no path to the conveyance. The condition of bridge (blocked) in the supply port or stuck on the conveying road. In addition, in the centrifugal pulverization method, it is formed by the use of centrifugal force from the molten state, so it becomes a state with a certain degree of voids in the particles, and the density of the particles can be reduced to a certain extent, which is advantageous for compression Transportability during forming.

On the other hand, although the crushing and sieving method needs to study the processing method of the large amount of fine powder and coarse particles generated by the sieving, the sieving device is used in the existing production line of the resin composition for semiconductor sealing, so it can be used directly The previous production line is better. In addition, regarding the crushing and sieving method, the selection of the sheet thickness when the molten resin is sliced before crushing, the crushing conditions or the selection of the sieve when crushing, the selection of the sieve when screening, etc. are used to express the present invention There are many factors that can be independently controlled for the particle size distribution, so there are many options for adjusting the desired particle size distribution, which is better in this respect. Furthermore, regarding the thermal cutting method, for example, the conventional production line can be directly used to the extent that a thermal cutting mechanism is added to the front end of the extruder, which is also preferable in this respect.

As a method of obtaining the above-mentioned ingot-shaped resin composition, for example, the raw material components are mixed by a mixer such as a mixer, and then heated, melted and kneaded by a kneader such as a roll, a kneader or an extruder, and then pulverized after cooling. The object is obtained by ingot forming into ingot shape.

As a method of obtaining the above-mentioned sheet-shaped resin composition, for example, a varnish prepared by dissolving or dispersing each raw material component or a resin composition obtained by mixing each component in an organic solvent, etc., and coating it on the film, A method of drying to form flakes. The coating method is not particularly limited, and a coating method using a coater such as a comma coater or a die coater, a printing method such as stencil printing or gravure printing, etc. can be mentioned. Alternatively, it is also possible to prepare a kneaded product by directly kneading the resin composition with a kneader or the like, and extruding the obtained kneaded product to form a sheet.

In addition, in the above-mentioned embodiment, when forming an organic resin film, a case where a pelletized resin composition is used for compression molding has been described, but the organic resin film processed into a sheet can also be used by the following method The resin composition for forming is compression-molded.

The base substrate 10 on which the first metal pattern 50 is formed is fixed to one of the upper mold and the lower mold of the compression molding mold by a fixture or a fixing means such as suction. Hereinafter, a case where the surface having the first metal pattern 50 formed on the base substrate 10 faces the resin material supply container will be fixed to the upper mold of the compression molding mold.

Next, a sheet-shaped organic resin film-forming resin composition is placed in the cavity under the mold so as to correspond to the first metal pattern 50 formed on the base substrate 10 fixed to the upper mold of the mold. Next, under reduced pressure, by reducing the distance between the upper mold and the lower mold of the mold, the sheet-like organic resin film-forming resin composition is heated to a predetermined temperature in the lower mold cavity to become a molten state. After that, by combining the upper mold and the lower mold of the mold, the first metal pattern 50 formed on the base substrate 10 fixed to the upper mold is pressed against the resin composition for forming an organic resin film in a molten state. Thereby, the first metal pattern 50 can be buried by the resin composition for forming an organic resin film, and the surface on which the first metal pattern 50 is formed can be covered with the resin composition for forming an organic resin film in a molten state on the base substrate 10 . After that, the state where the upper mold and the lower mold of the mold are combined is maintained, and the resin composition for forming an organic resin film is cured for a predetermined time. Thereby, the first organic resin film 200 can be formed.

In addition, the resin composition for forming an organic resin film processed into a sheet shape may be laminated by the following method, for example.

First, the sheet-shaped organic resin film-forming resin composition prepared in the shape of a roll is mounted on the unwinding device of the vacuum pressure laminator and connected to the winding device. Next, the base substrate 10 on which the first metal pattern 50 is formed is transported to the diaphragm (elastic film) type bonding machine section. Next, when the pressing is started under reduced pressure, the sheet-like organic resin film-forming resin composition is heated to a predetermined temperature and becomes a molten state. After that, the molten organic resin film is formed by the intermediary diaphragm. The resin composition is pressed and pressed against the first metal pattern 50 formed on the base substrate 10, whereby the first metal pattern 50 can be buried by the resin composition for forming an organic resin film and can be placed on the base The surface of the substrate 10 on which the first metal pattern 50 is formed is covered with a resin composition for forming an organic resin film in a molten state. After that, the resin composition for forming an organic resin film is cured over a predetermined period of time. Thereby, the first organic resin film 200 can be formed.

Furthermore, when higher precision flatness is required for the resin composition for forming an organic resin film, it is also possible to additionally use a flat pressing device adjusted to a high precision after pressing by a diaphragm laminator Pressing step to shape.

In addition, when forming the first organic resin film 200, the resin composition for forming an organic resin film processed into an ingot may be used for transfer molding by the following method.

First, a forming mold in which the base substrate 10 with the first metal pattern 50 is formed is prepared. The molding die prepared here is equipped with: a can into which the ingot-shaped organic resin film forming resin composition; and a plunger, which is equipped with and then inserted into the can in order to apply pressure to melt the organic resin film forming resin composition Auxiliary indenter; and runner, which send the molten organic resin film forming resin composition into the molding space.

Next, with the forming mold closed, the ingot-shaped organic resin film-forming resin composition is placed in the can. Here, the form of the resin composition for forming an organic resin film placed in the tank may be preheated with a preheater or the like to make it into a semi-molten state. Next, in order to melt the resin composition for forming an organic resin film in the tank, a plunger provided with an auxiliary pressure head is inserted into the tank to apply pressure to the resin composition for forming an organic resin film. After that, the molten resin composition for forming an organic resin film is introduced into the molding space through the runner. Secondly, the resin composition for forming the organic resin film filled in the molding space is heated and pressurized. hardening. After the resin composition for forming an organic resin film is cured, the forming mold is opened, whereby the first metal pattern 50 can be formed by embedding the resin composition for forming an organic resin film, and the molten organic resin can be formed on the base substrate 10 The resin composition for film formation covers the first organic resin film 200 on the surface where the first metal pattern 50 is formed.

The embodiments of the present invention have been described above, but these are examples of the present invention, and various configurations other than the above may be adopted.

[Example]

Hereinafter, the present invention will be described with examples and comparative examples, but the present invention is not limited to these.

<Example 1>

Using the resin composition for forming an organic resin film in which the components are blended according to the blending amounts shown in Table 1 below, an organic resin substrate was produced by the method described in the first and second embodiments (refer to Figures 1 to 4) After that, a semiconductor device is manufactured by the method described in the third embodiment (refer to FIG. 5).

The raw material components of the resin composition for forming an organic resin film shown in Table 1 above Among them, as silica 1 to 3, those having the following characteristics are used.

‧Silica 1: particles with an average particle size d50 of 4μm

‧Silica 2: particles with an average particle size d50 of 0.5μm

‧Silica 3: particles with an average particle size d50 of 1.5μm

Using an electrical tester, the continuity of each joint of the organic resin substrate was measured on the obtained organic resin substrate. As a result, the organic resin substrate of Example 1 has excellent electrical connectivity. In addition, the glass transition temperature of the organic resin film formed on the organic resin substrate was 170°C. In addition, the obtained semiconductor device does not have the above-mentioned warpage of the organic resin substrate when used at high temperatures, and has excellent mechanical strength and electrical connectivity.

<Example 2>

Using the resin composition for forming an organic resin film obtained by blending the components in the blending amounts shown in Table 2 below, by the method described in the first and second embodiments (see Figures 1 to 4) After the organic resin substrate is produced, a semiconductor device is produced by the method described in the third embodiment (see FIG. 5). In addition, the silicon dioxides 1 to 3 shown in Table 2 below are the same as in Example 1.

Using an electrical tester, the continuity of each joint in the organic resin substrate was measured on the obtained organic resin substrate. As a result, the organic resin substrate of Example 2 has excellent electrical connectivity. In addition, the glass transition temperature of the organic resin film formed on the organic resin substrate was 170°C. In addition, the obtained semiconductor device does not have the above-mentioned warpage of the organic resin substrate when used at high temperatures, and has excellent mechanical strength and electrical connectivity.

This application claims priority on the basis of Japanese Application No. 2015-63717 filed on March 26, 2015, and the entire contents of the disclosure are cited in this specification.

10‧‧‧Base substrate

50‧‧‧The first metal pattern

200‧‧‧The first organic resin film

210‧‧‧Insulating resin film

220‧‧‧Opening

230‧‧‧The first conductor part

300‧‧‧The second organic resin film

1000‧‧‧Organic resin substrate

Claims (19)

A method for manufacturing an organic resin substrate, which in turn includes: forming a first metal pattern on a base substrate; forming a first organic resin film covering the first metal pattern; grinding the first organic resin film to The step of removing it to expose the upper surface of the first metal pattern; and the step of forming a first conductor portion in contact with at least a part of the first metal pattern, and the step of forming the first metal pattern includes: A step of forming an insulating layer on a base substrate; a step of providing an opening in a specific part of the insulating layer; a step of burying the opening and forming a metal plating film on the entire surface of the insulating layer; and grinding the metal plating film , The step of removing the metal plating film on the insulating layer and leaving the metal plating film in the opening to form a first metal pattern. The step of forming a first organic resin film includes: preparing a heat The step of curing the resin composition of the resin and the filler; the step of embedding the first metal pattern using the resin composition; the step of curing the resin composition to form the first organic resin film, the thermosetting resin Contains trihydroxyphenylmethane type epoxy resin. A manufacturing method of an organic resin substrate, which sequentially includes the step of forming a first metal pattern on a base substrate; A step of forming a first conductor part in contact with at least a part of the first metal pattern; a step of forming a first organic resin film covering the first metal pattern and the first conductor part; and grinding the first organic resin The step of removing the film and exposing the upper surface of the first conductor portion. The step of forming the first metal pattern includes: forming an insulating layer on the base substrate; and providing an opening in a specific portion of the insulating layer Step; forming a metal plating film on the entire surface of the insulating layer by burying the opening; and grinding the metal plating film to remove the metal plating film on the insulating layer, and by making the metal The plating film remains in the opening to form the first metal pattern. The step of forming the first organic resin film includes: preparing a resin composition containing a thermosetting resin and a filler; using the resin composition The step of embedding the first metal pattern; the step of curing the resin composition to form the first organic resin film, and the thermosetting resin contains a trihydroxyphenylmethane type epoxy resin. For example, the method for manufacturing an organic resin substrate of the first or second patent application, further includes: removing the base substrate after the step of forming the first conductor portion. For example, the manufacturing method of the organic resin substrate of the first or second item of the scope of patent application, which in turn includes the step of forming the first conductor part or the step of exposing the upper surface of the first conductor part After that, a step of forming a second metal pattern in contact with the first conductor portion; a step of forming a second organic resin film covering the second metal pattern; grinding the second organic resin film to remove it, so that the The step of exposing the upper surface of the second metal pattern; and the step of forming the second conductor portion in contact with at least a part of the second metal pattern. The step of forming the second organic resin film includes: preparing a thermosetting The step of using the resin composition to embed the second metal pattern; the step of curing the resin composition to form the second organic resin film, the thermosetting resin containing three Hydroxyphenylmethane type epoxy resin. For example, the method for manufacturing an organic resin substrate of item 1 or 2 of the scope of the patent application includes in sequence: after the step of forming the first conductor portion or the step of exposing the upper surface of the first conductor portion, the 1 step of forming a second metal pattern in contact with the conductor part; step of forming a second conductor part in contact with at least a part of the second metal pattern; forming a second metal pattern covering the second metal pattern and the second conductor part 2. The step of organic resin film; and the step of grinding the second organic resin film to remove it, exposing the upper surface of the second conductor portion, and the step of forming the second organic resin film includes: preparing a thermosetting resin And the steps of the resin composition of the filler; The step of embedding the second metal pattern using the resin composition; the step of curing the resin composition to form the second organic resin film, and the thermosetting resin contains a trihydroxyphenylmethane type epoxy resin. For example, the manufacturing method of the organic resin substrate of the fourth item of the scope of patent application further includes: after the step of exposing the upper surface of the second conductor part, the step of removing the base substrate. For example, the manufacturing method of the organic resin substrate of the fifth item of the scope of patent application further includes: after the step of exposing the upper surface of the second conductor part, the step of removing the base substrate. For example, the method for manufacturing an organic resin substrate in the fourth item of the patent application, wherein the step of forming the first organic resin film or the step of forming the second organic resin film includes: preparing a resin composition containing a thermosetting resin and a filler The step of covering the first metal pattern or the second metal pattern with the resin composition; and the step of hardening the resin composition to form the first organic resin film or the second organic resin film. For example, the method for manufacturing an organic resin substrate of the fifth item of the scope of the patent application, wherein the step of forming the first organic resin film or the step of forming the second organic resin film includes: preparing a resin composition containing a thermosetting resin and a filler The step of covering the first metal pattern or the second metal pattern with the resin composition; and the step of hardening the resin composition to form the first organic resin film or the second organic resin film. For example, the manufacturing method of the organic resin substrate of item 8 of the scope of patent application, wherein the resin group The finished product is in the form of particles, tablets or sheets. For example, the method for manufacturing an organic resin substrate in the ninth patent application, wherein the resin composition is in the form of particles, plates or flakes. For example, the method for manufacturing an organic resin substrate of item 8 of the scope of the patent application, wherein the average particle size d50 of the filler is 0.1 μm or more and 20 μm or less. For example, the method for manufacturing an organic resin substrate in the scope of the patent application, wherein the average particle size d50 of the filler is 0.1 μm or more and 20 μm or less. For example, the method for manufacturing an organic resin substrate according to the eighth patent application, wherein the resin composition contains a silane coupling agent. For example, the method for manufacturing an organic resin substrate in the ninth patent application, wherein the resin composition contains a silane coupling agent. For example, the method for manufacturing an organic resin substrate according to the fourth item of the scope of patent application, wherein the glass transition temperature of the first organic resin film or the second organic resin film is 100° C. or more and 250° C. or less. For example, the method for manufacturing an organic resin substrate according to the fifth item of the scope of patent application, wherein the glass transition temperature of the first organic resin film or the second organic resin film is 100°C or more and 250°C or less. An organic resin substrate, which is prepared by the method for manufacturing an organic resin substrate according to any one of items 1 to 17 in the scope of patent application, and the organic resin film contains a cyanate ester resin. A semiconductor device containing the organic resin substrate of the 18th patent application.

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