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TWI605948B - Cutting apparatus - Google Patents

Cutting apparatus Download PDF

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Publication number
TWI605948B
TWI605948B TW102105292A TW102105292A TWI605948B TW I605948 B TWI605948 B TW I605948B TW 102105292 A TW102105292 A TW 102105292A TW 102105292 A TW102105292 A TW 102105292A TW I605948 B TWI605948 B TW I605948B
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Taiwan
Prior art keywords
carrier
sheet
bonding
glass
bonded
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TW102105292A
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Chinese (zh)
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TW201343403A (en
Inventor
艾拉莫菲艾那托力艾那托耶菲奇
貝爾曼羅伯特艾倫
布克拜得答納克雷
莊大可
朵美傑佛瑞約翰
艾尼克達溫吉恩
加斯基爾琳達
康嘉才
凱美樂馬維威廉
郭冠廷
林仁傑
曼利羅伯喬治
湯瑪斯約翰克里斯多佛
曾珮璉
張江紀杰
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康寧公司
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Publication of TW201343403A publication Critical patent/TW201343403A/en
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Publication of TWI605948B publication Critical patent/TWI605948B/en

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • C03C27/10Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/07Cutting armoured, multi-layered, coated or laminated, glass products
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/09Severing cooled glass by thermal shock
    • C03B33/091Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02Controlled or contamination-free environments or clean space conditions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Liquid Crystal (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Joining Of Glass To Other Materials (AREA)

Description

切割設備 Cutting equipment 【相關申請案的交叉引用】 [Cross-reference to related applications]

本專利申請案根據專利法主張於2012年2月8日提出申請的美國臨時專利申請案序號第61/596727號的優先權權益,該申請案之內容為本案所依據,且該申請案之內容以引用方式全部併入本文中。 This patent application is based on the priority of the U.S. Provisional Patent Application Serial No. 61/596,727 filed on Feb. 8, 2012, the content of which is hereby incorporated by All of them are incorporated herein by reference.

本發明係關於在載體上處理薄片的設備及方法,而且本發明更具體而言係關於載體上的可撓性玻璃薄片。 The present invention relates to an apparatus and method for processing a sheet on a carrier, and more particularly to a flexible glass sheet on a carrier.

現今,可撓性塑膠基板係使用層壓有一或多個聚合物膜的塑膠基材所製成。由於成本低,這些層壓的基板堆疊通常用於與光伏(PV)、有機發光二極體(OLED)、液晶顯示器(LCD)及圖案化薄膜電晶體(TFT)電子元件相關的可撓性封裝。 Today, flexible plastic substrates are made from a plastic substrate laminated with one or more polymer films. Due to their low cost, these laminated substrate stacks are commonly used in flexible packages related to photovoltaic (PV), organic light emitting diode (OLED), liquid crystal display (LCD) and patterned thin film transistor (TFT) electronic components. .

可撓性玻璃基板提供了幾個優於可撓性塑膠技術的 技術優點。一個技術優點為玻璃作為濕氣或氣體阻障的能力,濕氣或氣體為戶外電子產品的主要降解途徑。第二個優點在於可撓性玻璃基板經由減少或免除一或多個封裝基板層而縮小整體封裝尺寸(厚度)和重量的潛力。 Flexible glass substrates offer several advantages over flexible plastic technology Technical advantages. One technical advantage is the ability of glass to act as a moisture or gas barrier, and moisture or gas is the primary degradation pathway for outdoor electronics. A second advantage is the potential of the flexible glass substrate to reduce overall package size (thickness) and weight by reducing or eliminating one or more package substrate layers.

由於對較薄/可撓性基板(厚度<0.3 mm)的需求已驅入電子顯示器產業,故製造商面臨了各種處理這些較薄/可撓性基板的挑戰。 As the demand for thinner/flexible substrates (thickness <0.3 mm) has driven into the electronic display industry, manufacturers face a variety of challenges in dealing with these thinner/flexible substrates.

一種選擇是處理較厚的玻璃片,然後將面板蝕刻或拋光到較薄的整體淨厚度,這得以使用現有的面板製造基本設施,但在製程末端增加了拋光成本。 One option is to process thicker glass sheets and then etch or polish the panels to a thin overall net thickness, which allows the use of existing panel fabrication infrastructure, but adds polishing costs at the end of the process.

第二種作法是為較薄的基板重新設計現有的面板製程,在該製程中玻璃損失是主要的阻礙,而且將需要龐大的資本投資來最小化片對片製程或輥對輥製程任一製程中的處理損失。 The second approach is to redesign existing panel processes for thinner substrates where glass loss is a major impediment and will require significant capital investment to minimize either wafer-to-sheet or roll-to-roll processes. Processing loss in .

第三種作法是將輥對輥處理技術利用於薄的可撓性基板。 A third approach is to utilize roll-to-roll processing techniques for thin flexible substrates.

第四種作法會是使用載體製程,其中使用黏結劑將薄的基板玻璃結合於較厚的玻璃載體。 A fourth approach would be to use a carrier process in which a thin substrate glass is bonded to a thicker glass carrier using a binder.

所需的是一種利用製造商之現有投資基礎設施的載體作法,使得在較高的處理溫度下薄玻璃(即厚度0.3毫米厚)之處理不會污染薄玻璃和載體或減損薄玻璃和載體之間的結合強度,及其中在製程結束時薄玻璃可輕易地從載體脫離。 What is needed is a carrier approach that utilizes the manufacturer's existing investment infrastructure to make thin glass (ie thickness) at higher processing temperatures The treatment of 0.3 mm thick does not contaminate the thin glass and the carrier or detract from the bond strength between the thin glass and the carrier, and the thin glass can be easily detached from the carrier at the end of the process.

本概念涉及初始藉由凡得瓦力將薄片(例如可撓性玻璃片)結合至載體(例如另一個玻璃片),然後提高某些區域的結合力,同時保留處理薄片/載體以在薄片/載體上形成裝置(例如電子或顯示裝置、電子或顯示裝置之元件、OLED材料、光伏(PV)結構或薄膜電晶體)之後移出薄片的能力。至少一部分的薄玻璃被結合至載體,使得可防止裝置製程流體進入薄片與載體之間,藉以減少污染下游製程的機會,亦即薄片與載體之間的結合密封是密閉的,而且在一些較佳的實施例中,此密封涵括製品的外部,從而防止液體或氣體侵入或流出密封製品之任何區域。 The concept involves initially bonding a sheet (eg, a flexible glass sheet) to a carrier (eg, another glass sheet) by van der Waals, and then increasing the bonding force of certain areas while leaving the treated sheet/carrier to be in the sheet/ The ability to form a device, such as an electronic or display device, an electronic or display device component, an OLED material, a photovoltaic (PV) structure, or a thin film transistor, is then removed from the carrier. At least a portion of the thin glass is bonded to the carrier such that the process process fluid is prevented from entering between the sheet and the carrier, thereby reducing the chance of contamination of the downstream process, i.e., the bond seal between the sheet and the carrier is sealed, and preferably some In an embodiment, the seal encompasses the exterior of the article to prevent liquid or gas from invading or exiting any area of the article of sealing.

本方法的一種商業利益在於製造商將能夠利用其現存的處理設備資本投資,同時得到將玻璃薄片用於例如PV、OLED、LCD及圖案化薄膜電晶體(TFT)電子元件的優點。另外,本方法能夠得到製程彈性,包括:對於玻璃薄片與載體的清洗與表面準備的製程彈性,以便利結合;對於強化薄片與載體之間在結合區域結合的製程彈性;對於保持薄片在非結合(或降低的/低強度結合)區域脫離載體的可釋放性的製程彈性;及對於切割薄片以便利從載體取出的製程彈性。嚴格來說,非結合區域可以包括在薄片與載體之間的一些結合,但該結合為足夠弱的,以容許薄片被輕易地從載體移出,而不損壞薄片;貫穿本揭示,僅為了方便之故,將這樣的區域稱為非結合區域。在本質上,非結合區域的結合強度明顯低於結合區域中的結合強度。 One commercial benefit of the method is that manufacturers will be able to capitalize on their existing processing equipment capital while at the same time gaining the advantages of using glass flakes for, for example, PV, OLED, LCD, and patterned thin film transistor (TFT) electronic components. In addition, the method can obtain process flexibility, including: process elasticity for cleaning and surface preparation of the glass flakes and the carrier, to facilitate bonding; process flexibility for bonding the bonding sheet between the reinforcing sheet and the carrier; The (or reduced/low strength bond) zone is free of process releasability from the carrier; and the process flexibility for cutting the flakes to facilitate removal from the carrier. Strictly speaking, the non-bonded region may include some combination between the sheet and the carrier, but the bond is weak enough to allow the sheet to be easily removed from the carrier without damaging the sheet; throughout this disclosure, it is only convenient. Therefore, such an area is referred to as a non-bonded area. In essence, the bond strength of the non-bonded regions is significantly lower than the bond strength in the bond regions.

在某些裝置製程中,可以使用接近600℃或更高的溫度及/或真空環境。這些條件限制了可使用的材料,並且將高的需求寄託於載體/薄片。本案發明人已經發現到,製品(包括與載體結合的薄片)安然度過這種條件的能力可以藉由最少化陷入薄片與載體之間的氣體量來提高。最少化陷入的氣體可以有數種方式,例如藉由:在載體/玻璃薄片經過釋放層沉積製程後,退火載體/玻璃薄片,其中退火可最少化在薄片與載體互相結合之後的後續脫氣一此退火可以在將載體/玻璃薄片置於彼此接觸之前或之後完成;在真空環境中將薄片與載體互相初始結合;藉由使用例如排氣條及/或溝槽提供氣體從薄片與載體之間逸出的路徑;適當地選擇清洗/蝕刻溶液;及控制載體及/或薄片的表面粗糙度。每一種前述最少化陷入氣體的方式皆可以單獨使用,或與任一或多種其他最少化陷入的空氣及/或其他氣體的方式結合。 In some device processes, temperatures and/or vacuum environments approaching 600 ° C or higher can be used. These conditions limit the materials that can be used and place high demands on the carrier/sheet. The inventors of the present invention have discovered that the ability of articles (including sheets bonded to a carrier) to survive this condition can be improved by minimizing the amount of gas trapped between the sheet and the carrier. Minimizing the trapped gas can be accomplished in several ways, for example by annealing the support/glass flakes after the support/glass flakes have been subjected to a release layer deposition process, wherein annealing minimizes subsequent degassing after the sheets are combined with the support. Annealing can be accomplished before or after placing the support/glass flakes in contact with one another; initially bonding the flakes to the carrier in a vacuum environment; providing gas from the flakes to the carrier by using, for example, a vent strip and/or a groove The path to be taken; the cleaning/etching solution is appropriately selected; and the surface roughness of the carrier and/or the sheet is controlled. Each of the foregoing methods of minimizing trapped gas may be used alone or in combination with any one or more of the other methods of minimizing trapped air and/or other gases.

將在以下實施方式中提出另外的特徵與優點,而且從該描述有部分對於熟悉本項技藝者而言將可立即顯而易見,或有部分可藉由實施如書面說明與附圖中例示的及如隨附申請專利範圍中界定的本發明而認可。瞭解到,前面的一般性描述及以下的實施方式皆僅為本發明之例示,且意在提供瞭解如所主張的本發明之本質與特性的概述或架構。 Additional features and advantages will be set forth in the description which follows. Recognized by the present invention as defined in the scope of the patent application. It is to be understood that the foregoing general description and the following embodiments are merely illustrative of the embodiments of the invention

涵括附圖以提供對本發明原理的進一步瞭解,並且附圖被併入而構成本說明書的一部分。圖式說明一或多個實施例,並與描述一起藉由舉例的方式來解釋本發明的原理與操作。瞭解到,可以將本說明書與圖式中所揭示本發明的各 種特徵使用於任何的組合及全部組合中。例如,可以依據以下提出的態樣組合本發明的各種特徵。 The drawings are included to provide a further understanding of the principles of the invention, and are incorporated in the drawings. The drawings illustrate one or more embodiments and, together with the It is understood that each of the present invention disclosed in the present specification and drawings can be used. The features are used in any combination and in all combinations. For example, various features of the invention may be combined in the manner set forth below.

依據第一態樣,提供一種將薄片結合於載體的方法,該方法包含以下步驟:a)提供薄片與載體;b)將該薄片結合於該載體;c)處理該薄片與該載體中之至少一者,以便在結合之後最少化陷入該薄片與該載體之間的氣體。 According to a first aspect, there is provided a method of bonding a sheet to a carrier, the method comprising the steps of: a) providing a sheet and a carrier; b) binding the sheet to the carrier; c) treating the sheet with at least the carrier One, in order to minimize the gas trapped between the sheet and the carrier after bonding.

依據第二態樣,提供該第一態樣之方法,其中步驟(c)在步驟(b)之前進行,並且包含在該薄片與該載體中之至少一者上沉積釋放層,及在比後續將裝置處理至該薄片上的預期溫度更高的溫度下,退火該薄片與該載體中之至少一者。 According to a second aspect, the method of the first aspect is provided, wherein step (c) is performed prior to step (b) and comprises depositing a release layer on at least one of the sheet and the carrier, and At least one of the sheet and the carrier is annealed by processing the apparatus to a temperature at a higher temperature than the desired temperature on the sheet.

依據第三態樣,提供該第一態樣之方法,該方法進一步包含步驟(d)對該薄片與該載體中之至少一者提供表面處理,以便形成非結合區域,及其中步驟(c)包含提供該薄片與該載體中之至少一者從該薄片與該載體中之至少一者的外部周緣延伸至該非結合區域的溝槽。 According to a third aspect, the method of providing the first aspect, the method further comprising the step (d) of providing a surface treatment to at least one of the sheet and the carrier to form a non-bonded region, and wherein the step (c) A trench is provided that provides at least one of the sheet and the carrier from an outer periphery of at least one of the sheet and the carrier to the unbonded region.

依據第四態樣,提供該第三態樣之方法,其中步驟(b)係於真空環境中進行,及步驟(c)進一步包含在該薄片與該載體已經結合之後但在從該真空環境移出該薄片與該載體之前密封該溝槽。 According to a fourth aspect, the method of the third aspect is provided, wherein step (b) is performed in a vacuum environment, and step (c) is further included after the sheet has been bonded to the carrier but is removed from the vacuum environment The sheet and the carrier are previously sealed to the groove.

依據第五態樣,提供該第四態樣之方法,其中該密封包含以下之一或多者:以熔塊填充該溝槽及加熱該熔塊; 以熱可固性樹脂填充該溝槽然後加熱該樹脂。 According to a fifth aspect, the method of the fourth aspect is provided, wherein the seal comprises one or more of: filling the trench with a frit and heating the frit; The trench is filled with a thermosetting resin and then the resin is heated.

依據第六態樣,提供該第一態樣之方法,該方法進一步包含步驟(d)在步驟(b)期間對該薄片與該載體中之至少一者提供表面處理,以便形成非結合區域,及其中步驟(c)包含以流體清洗該薄片與該載體中之至少一者,經沖洗該流體可最少化在後續處理溫度將出氣的殘餘物。 According to a sixth aspect, there is provided a method of the first aspect, the method further comprising the step (d) of providing a surface treatment to the at least one of the sheet and the carrier during the step (b) to form a non-bonded region, And wherein step (c) comprises fluid cleaning the at least one of the sheet and the carrier, and rinsing the fluid minimizes residues that will be vented at subsequent processing temperatures.

依據第七態樣,提供該第一態樣之方法,其中步驟(c)與步驟(b)同時進行,並且包括在真空環境中將該薄片結合於該載體,及使水蒸汽流入該真空環境中。 According to a seventh aspect, the method of the first aspect is provided, wherein the step (c) is performed simultaneously with the step (b), and comprises bonding the sheet to the carrier in a vacuum environment, and flowing water vapor into the vacuum environment in.

依據第八態樣,提供該第一態樣之方法,其中步驟(b)於該薄片與該載體之間產生結合區域,及進一步包含步驟(d)藉由對該結合區域加熱或加壓而提高該薄片與該載體之間該結合之強度。 According to an eighth aspect, the method of the first aspect is provided, wherein the step (b) produces a bonding region between the sheet and the carrier, and further comprises the step (d) of heating or pressurizing the bonding region The strength of the bond between the sheet and the carrier is increased.

依據第九態樣,提供該第八態樣之方法,其中步驟(d)包含在400至625℃的溫度下加熱該薄片與該載體。 According to a ninth aspect, the method of the eighth aspect is provided, wherein the step (d) comprises heating the sheet and the carrier at a temperature of from 400 to 625 °C.

依據第十態樣提供一種製品,該製品包含:載體;薄片;具有外部周邊的結合區域,將該薄片固持於該載體;配置以便被該結合區域圍繞的非結合區域,其中該薄片與該載體中之至少一者包括從該非結合區域延伸至該結合區域之該外部周邊的溝槽。 According to a tenth aspect, an article is provided, the article comprising: a carrier; a sheet; a bonding region having an outer periphery, the sheet being held on the carrier; a non-bonding region configured to be surrounded by the bonding region, wherein the sheet and the carrier At least one of the grooves extending from the unbonded region to the outer perimeter of the bonded region.

依據第十一態樣提供該第十態樣之製品,其中該溝槽填充有密封材料。 According to an eleventh aspect, the article of the tenth aspect is provided, wherein the groove is filled with a sealing material.

依據第十二態樣提供該第十一態樣之製品,其中該密封材料係選自:熔塊;燒結熔塊;熱可固性樹脂;熱固性樹脂;UV可固性樹脂;UV固性樹脂;聚醯亞胺;由該薄片與該載體中之一者熔化的材料。 The article of the eleventh aspect is provided according to the twelfth aspect, wherein the sealing material is selected from the group consisting of: a frit; a sintered frit; a thermosetting resin; a thermosetting resin; a UV curable resin; and a UV curable resin Polyimine; a material that is melted from one of the sheets and the carrier.

依據第十三態樣,提供一種藉由圍繞非結合區域的結合區域而從結合於載體之薄片移出薄片之所要部分的方法,該薄片具有厚度,該方法包含以下步驟:形成周邊排氣孔,該周邊排氣孔界定該所要部分之周邊,其中該周邊排氣孔係配置於該非結合區域內並具有深度,該深度該薄片厚度之50%。 According to a thirteenth aspect, there is provided a method of removing a desired portion of a sheet from a sheet bonded to a carrier by a bonding region surrounding the non-bonding region, the sheet having a thickness, the method comprising the steps of: forming a peripheral vent hole, The peripheral vent defines a perimeter of the desired portion, wherein the peripheral vent is disposed within the unbonded region and has a depth, the depth 50% of the thickness of the sheet.

依據第十四態樣提供該第十三態樣之方法,進一步包含於該非結合區域中形成二釋放排氣孔,該二釋放排氣孔既非互相平行,亦非互相共直線。 The method of providing the thirteenth aspect according to the fourteenth aspect, further comprising forming two release vent holes in the non-bonding region, the two release vent holes being neither parallel to each other nor co-linear with each other.

依據第十五態樣提供該第十三態樣之方法,該方法進一步包含:形成二釋放排氣孔,該二釋放排氣孔互相平行或共直線,其中每一該釋放排氣孔在該結合區域與非結合區域中延伸,及延伸該釋放排氣孔穿過該薄片與該載體二者,以便移出一部分的該薄片與該載體,從而允許該所要部分被滑離該載體。 A method for providing the thirteenth aspect according to the fifteenth aspect, the method further comprising: forming two release vents, the two release vents being parallel or co-linear, wherein each of the release vents is Extending in the bonded and unbonded regions, and extending the release vent through both the sheet and the carrier to remove a portion of the sheet from the carrier, thereby allowing the desired portion to be slid away from the carrier.

依據第十六態樣提供該第十四態樣或該第十五態樣之方法,其中該釋放排氣孔來到該周邊排氣孔的500微米內但不接觸該周邊排氣孔。 A method of providing the fourteenth aspect or the fifteenth aspect according to the sixteenth aspect, wherein the release vent hole reaches within 500 micrometers of the peripheral vent hole but does not contact the peripheral vent hole.

依據第十七態樣提供第十三態樣至第十六態樣任一者之方法,該方法進一步包含使用雷射來形成該等排氣孔中之至少一者。 A method of providing a thirteenth aspect to a sixteenth aspect according to the seventeenth aspect, the method further comprising using a laser to form at least one of the vent holes.

依據第十八態樣,提供一種形成以薄片為基礎的裝置之方法,該方法包含以下步驟:藉由圍繞非結合區域的結合區域將薄片附著於載體;處理該薄片以便於該非結合區域上形成裝置;及依據態樣13至17中之任一方法移出該薄片之所要部分。 According to an eighteenth aspect, there is provided a method of forming a sheet-based device, the method comprising the steps of: attaching a sheet to a carrier by a bonding region surrounding the non-bonding region; processing the sheet to form on the non-bonding region And removing the desired portion of the sheet according to any of the methods 13 to 17.

依據第十九態樣,提供一種切割設備,該切割設備包含:具有複數個孔之噴頭;光學式耦接至該複數個孔中之第一孔的雷射源,以便傳送雷射光束穿過該第一孔;及與該複數個孔中之至少第二孔及至少第三孔流體連通的冷卻流體源,其中從該第一孔延伸至該第二孔的第一線係配置於與從該第一孔延伸至該第三孔的第二線形成第一角度。 According to a nineteenth aspect, a cutting apparatus is provided, the cutting apparatus comprising: a showerhead having a plurality of apertures; and a laser source optically coupled to the first one of the plurality of apertures for transmitting a laser beam through a first hole; and a source of cooling fluid in fluid communication with at least the second hole and the at least third hole of the plurality of holes, wherein the first line extending from the first hole to the second hole is disposed in and The first hole extends to a second line of the third hole to form a first angle.

依據第二十態樣,提供該第十九態樣之切割設備,其中該第一角度為90度,其中該冷卻流體源也與該複數個孔中之第四孔及該複數個孔中之第五孔流體連通,而且進一步地,其中從該第一孔延伸至該第四孔的第三線係大致上與該第一線共直線,及從該第一孔延伸至該第五孔的第四線係大 致上與該第二線共直線。 According to a twentieth aspect, the cutting apparatus of the nineteenth aspect, wherein the first angle is 90 degrees, wherein the cooling fluid source is also in a fourth hole of the plurality of holes and the plurality of holes The fifth aperture is in fluid communication, and further wherein the third line extending from the first aperture to the fourth aperture is substantially co-linear with the first line, and extending from the first aperture to the fifth aperture Four-line system The line is in line with the second line.

依據第二十一態樣,提供該第十九態樣之切割設備,其中該第一角度為90度以外的度數或90度之倍數度數。 According to a twenty-first aspect, the nineteenth aspect of the cutting apparatus is provided, wherein the first angle is a degree other than 90 degrees or a multiple of 90 degrees.

依據第二十二態樣,提供一種切割設備,該切割設備包含:具有複數個孔之噴頭;光學式耦接至該複數個孔中之第一孔的雷射源,以便傳送雷射光束穿過該第一孔;及與該複數個孔中之至少第二孔流體連通的冷卻流體源,其中該噴頭係可轉動的。 According to a twenty-second aspect, a cutting apparatus is provided, the cutting apparatus comprising: a showerhead having a plurality of apertures; and a laser source optically coupled to the first one of the plurality of apertures for transmitting a laser beam Passing through the first aperture; and a source of cooling fluid in fluid communication with at least a second one of the plurality of apertures, wherein the showerhead is rotatable.

依據第二十三態樣,提供第十九態樣至第二十二態樣任一者之切割設備,其中該冷卻流體源為壓縮空氣源。 According to a twenty-third aspect, a cutting apparatus of any of the nineteenth aspect to the twenty-second aspect is provided, wherein the source of the cooling fluid is a source of compressed air.

依據第二十四態樣,提供第十九態樣至第二十三態樣任一者之切割設備,其中該等孔具有1 mm的直徑。 According to a twenty-fourth aspect, the cutting apparatus of any of the nineteenth aspect to the twenty-third aspect is provided, wherein the holes have 1 mm diameter.

依據第二十五態樣,提供一種切割方法,該方法包含以下步驟:提供依據第十九態樣至第二十一態樣、第二十三態樣、第二十四態樣任一者之切割設備;傳送雷射光束穿過該第一孔及輸送冷卻流體通過該第二孔,同時在第一方向上沿著該第一線移動該噴頭;停止輸送冷卻流體通過該第二孔;輸送流體通過該第三孔,同時在第二方向上沿著該第二線移動該噴頭; 停止輸送冷卻流體通過該第三孔。 According to a twenty-fifth aspect, a cutting method is provided, the method comprising the steps of: providing any one of the nineteenth aspect to the twenty-first aspect, the twenty-third aspect, and the twenty-fourth aspect according to the nineteenth aspect Cutting device; transmitting a laser beam through the first hole and conveying cooling fluid through the second hole while moving the nozzle along the first line in a first direction; stopping delivery of cooling fluid through the second hole; Transporting fluid through the third aperture while moving the showerhead along the second line in a second direction; Stop delivering cooling fluid through the third orifice.

依據第二十六態樣,提供一種切割方法,該方法包含以下步驟:提供依據該第二十二態樣之切割設備;傳送雷射光束穿過該第一孔及輸送冷卻流體通過該第二孔,同時在第一方向上移動該噴頭;轉動該噴頭並在第二方向上移動該噴頭,該第二方向與該第一方向形成非零度角。 According to a twenty-sixth aspect, a cutting method is provided, the method comprising the steps of: providing a cutting device according to the second twelfth aspect; transmitting a laser beam through the first hole and conveying a cooling fluid through the second The aperture moves the nozzle in a first direction; rotating the nozzle and moving the nozzle in a second direction, the second direction forming a non-zero angle with the first direction.

依據第二十七態樣,提供一種製品,該製品包含:載體;薄片;形成於該薄片之周邊附近的結合區域,將該薄片固持於該載體;配置為被該結合區域圍繞的釋放層,其中該釋放層係由在第一預定溫度下不與該薄片結合、但在第二預定溫度下將與該薄片結合的材料所製成,其中該第二預定溫度高於該第一預定溫度。 According to a twenty-seventh aspect, there is provided an article comprising: a carrier; a sheet; a bonding region formed adjacent the periphery of the sheet, the sheet being held on the carrier; a release layer configured to be surrounded by the bonding region, Wherein the release layer is made of a material that does not bond to the sheet at a first predetermined temperature but combines with the sheet at a second predetermined temperature, wherein the second predetermined temperature is above the first predetermined temperature.

依據第二十八態樣,提供該第二十七態樣之製品,其中該釋放層包含矽膜,該矽膜位於該載體之表面上並具有100至500 nm之厚度,其中該矽膜遠離該載體之表面已經經過去氫化表面處理。 According to a twenty-eighth aspect, the article of the twenty-seventh aspect, wherein the release layer comprises a ruthenium film on a surface of the carrier and having a thickness of 100 to 500 nm, wherein the ruthenium film is away from The surface of the carrier has been subjected to a dehydrogenation surface treatment.

依據第二十九態樣,提供該第二十八態樣之製品,其中該釋放層進一步包含金屬膜,該金屬膜位於該薄片面對該載體之表面上,其中該金屬膜具有100至500 nm之厚度。 According to a twenty-ninth aspect, the article of the twenty-eighth aspect is provided, wherein the release layer further comprises a metal film on a surface of the sheet facing the carrier, wherein the metal film has 100 to 500 The thickness of nm.

依據第三十態樣,提供該第二十九態樣之製品,其中該金屬係選自將在600℃的溫度下與矽形成矽化物之群組,使得由於在Ra2 nm的濺鍍中之晶粒尺寸,該金屬將具有表面粗糙度。 According to a thirtieth aspect, the article of the twenty-ninth aspect is provided, wherein the metal is selected from A group of tellurides formed with ruthenium at a temperature of 600 ° C, resulting in Ra The grain size in 2 nm sputtering, the metal will have surface roughness.

依據第三十一態樣,提供該第二十九態樣或第三十態樣之製品,其中該金屬係選自鋁、鉬及鎢。 According to a thirty-first aspect, the article of the twenty-ninth aspect or the thirtieth aspect is provided, wherein the metal is selected from the group consisting of aluminum, molybdenum, and tungsten.

依據第三十二態樣,提供第二十七態樣至第三十一態樣任一者之製品,其中該薄片為厚度300微米的玻璃。 According to the thirty-second aspect, the article of any one of the twenty-seventh aspect to the thirty-first aspect is provided, wherein the sheet is thick 300 micron glass.

依據第三十三態樣,提供第二十七態樣至第三十二態樣任一者之製品,其中該載體為厚度50微米的玻璃。 According to the thirty-third aspect, the article of any one of the twenty-seventh aspect to the thirty-second aspect is provided, wherein the carrier is thickness 50 micron glass.

依據第三十四態樣,提供第二十七態樣至第三十三態樣任一者之製品,其中該薄片與該載體之組合厚度為125至700微米。 According to a thirty fourth aspect, the article of any one of the twenty-seventh aspect to the thirty-third aspect is provided, wherein the combination of the sheet and the carrier has a thickness of from 125 to 700 μm.

依據第三十五態樣,提供一種依據第二十七態樣至第三十四態樣之任一者從製品產生複數個所要部分的方法,該方法包含以下步驟:局部加熱該釋放層至該第二預定溫度的溫度,以形成複數個結合輪廓線。 According to a thirty-fifth aspect, there is provided a method of producing a plurality of desired portions from an article according to any one of the twenty-seventh aspect to the thirty-fourth aspect, the method comprising the steps of: locally heating the release layer to The temperature of the second predetermined temperature forms a plurality of bonding contours.

依據第三十六態樣,提供第三十五態樣之方法,該方法進一步包含使用不使該釋放層處於大於該第一預定溫度的溫度之製程於該薄片上形成裝置。 According to a thirty-sixth aspect, a method of providing a thirty-fifth aspect, the method further comprising forming a device on the sheet using a process that does not cause the release layer to be at a temperature greater than the first predetermined temperature.

依據第三十七態樣,提供第三十五態樣之方法,該方法進一步包含依據第十三取出態樣至第十七取出態樣任一者之方法移出該所要部分。 According to a thirty-seventh aspect, the method of the thirty-fifth aspect is provided, the method further comprising removing the desired portion according to any one of the thirteenth take-out aspect to the seventeenth take-out aspect.

依據第三十八態樣,提供一種在薄片上製作裝置的方法,該方法包含以下步驟:處理至少部分的該裝置至製品之薄片上,其中該製品包含該薄片,該薄片具有300微米的厚度且被結合至載體,該載體具有100微米的厚度,及進一步地其中該結合包括複數個第一區域及一第二區域,該複數個第一區域具有一結合力,該第二區域具有明顯大於該第一結合力的第二結合力;切割至少該製品之該載體,以便產生第一製品部分及第二製品部分,其中該第一製品部分包括該複數個第一區域中之一者及至少一部分的該第二區域;處理該裝置之另外部分至該第一製品部分上。 According to a thirty-eighth aspect, there is provided a method of making a device on a sheet, the method comprising the steps of: processing at least a portion of the device onto a sheet of the article, wherein the article comprises the sheet, the sheet having 300 microns in thickness and bonded to a carrier having a thickness of 100 microns, and further wherein the bonding comprises a plurality of first regions and a second region, the plurality of first regions having a bonding force, the second region having a second combination significantly greater than the first bonding force Cutting the carrier of at least the article to produce a first article portion and a second article portion, wherein the first article portion includes one of the plurality of first regions and at least a portion of the second region; A further portion of the device onto the first article portion.

依據第三十九態樣,提供第三十八態樣之方法,其中該切割係沿著一線進行,該線位於該第二區域內。 According to a thirty-ninth aspect, a method of the thirty-eighth aspect is provided, wherein the cutting line is performed along a line, the line being located in the second area.

依據第四十態樣,提供該第三十八態樣或第三十九態樣之方法,其中進行該切割,使得該第一製品部分在其周邊附近包括至少一部分的該第二區域。 According to a fortieth aspect, the method of the thirty-eighth aspect or the thirty-ninth aspect is provided, wherein the cutting is performed such that the first article portion includes at least a portion of the second region near its periphery.

依據第四十一態樣,提供第三十八態樣至第四十態樣任一者之方法,該方法進一步包含依據第十三態樣至第十七態樣任一者從該第一製品部分移出至少一部份的該薄片。 According to a forty-first aspect, the method of any one of the thirty-eighth aspect to the fortieth aspect is provided, the method further comprising, according to the thirteenth aspect to the seventeenth aspect, from the first The article portion removes at least a portion of the sheet.

依據第四十二態樣,在該第一態樣至該第十八態樣或該第二十七態樣至該第四十一態樣任一者中,該薄片為玻璃片,且該載體為玻璃片。 According to the forty-second aspect, in the first aspect to the eighteenth aspect or the twenty-seventh aspect to the forty-first aspect, the sheet is a glass piece, and the sheet The carrier is a glass piece.

2‧‧‧製品 2‧‧‧Products

3‧‧‧箭頭 3‧‧‧ arrow

5‧‧‧虛線 5‧‧‧ dotted line

10‧‧‧載體 10‧‧‧ Carrier

12‧‧‧厚度 12‧‧‧ thickness

14‧‧‧線 14‧‧‧ line

20‧‧‧薄片 20‧‧‧Sheet

22‧‧‧厚度 22‧‧‧ thickness

24‧‧‧組合厚度 24‧‧‧Combined thickness

30‧‧‧釋放層 30‧‧‧ release layer

40‧‧‧結合區域 40‧‧‧Combined area

41‧‧‧界面 41‧‧‧ interface

42‧‧‧輪廓線 42‧‧‧ contour

50‧‧‧非結合區域 50‧‧‧Unbonded area

52‧‧‧周邊 52‧‧‧around

56‧‧‧所要部分 56‧‧‧ required parts

57‧‧‧周邊 57‧‧‧around

58‧‧‧箭頭 58‧‧‧ arrow

60‧‧‧周邊排氣孔 60‧‧‧ peripheral vents

61‧‧‧排氣孔 61‧‧‧ venting holes

62‧‧‧深度 62‧‧‧depth

63‧‧‧排氣孔 63‧‧‧ venting holes

64‧‧‧距離 64‧‧‧ Distance

65‧‧‧排氣孔 65‧‧‧ venting holes

66‧‧‧距離 66‧‧‧distance

67‧‧‧排氣孔 67‧‧‧ venting holes

69‧‧‧排氣孔 69‧‧‧ venting holes

70‧‧‧排氣條 70‧‧‧Exhaust strip

71‧‧‧寬度 71‧‧‧Width

73‧‧‧寬度 73‧‧‧Width

80‧‧‧邊緣結合 80‧‧‧ edge combination

81‧‧‧區域 81‧‧‧Area

90‧‧‧刻劃輪 90‧‧‧scribed wheel

91‧‧‧吸盤 91‧‧‧Sucker

92‧‧‧斷裂桿 92‧‧‧breaking rod

94‧‧‧雷射 94‧‧‧Laser

96‧‧‧冷卻劑噴嘴 96‧‧‧ coolant nozzle

98‧‧‧彈性底板 98‧‧‧Flexible bottom plate

102‧‧‧載體流程 102‧‧‧Carrier process

104‧‧‧製程 104‧‧‧Process

104a‧‧‧製程 104a‧‧‧Process

106‧‧‧處理 106‧‧‧Process

108‧‧‧製程 108‧‧‧Process

110‧‧‧製程 110‧‧‧Process

112‧‧‧處理 112‧‧‧Process

114‧‧‧製程 114‧‧‧Process

116‧‧‧製程 116‧‧‧Process

122‧‧‧製程流程 122‧‧‧Process Process

124‧‧‧清洗製程 124‧‧‧cleaning process

200‧‧‧噴頭 200‧‧‧ nozzle

201‧‧‧孔 201‧‧‧ hole

202‧‧‧孔 202‧‧‧ hole

203‧‧‧孔 203‧‧‧ hole

204‧‧‧孔 204‧‧‧ hole

205‧‧‧孔 205‧‧‧ hole

212‧‧‧第二孔 212‧‧‧second hole

213‧‧‧第三孔 213‧‧‧ third hole

215‧‧‧箭頭 215‧‧‧ arrow

401‧‧‧槽 401‧‧‧ slot

402‧‧‧槽 402‧‧‧ slots

403‧‧‧槽 403‧‧‧ slot

404‧‧‧槽 404‧‧‧ slots

410‧‧‧清洗步驟 410‧‧‧cleaning steps

420‧‧‧SC1步驟 420‧‧‧SC1 steps

430‧‧‧沖洗步驟 430‧‧‧Flushing steps

440‧‧‧乾燥步驟 440‧‧‧ drying step

1801‧‧‧線 1801‧‧‧ line

1802‧‧‧線 Line 1802‧‧

1803‧‧‧線 Line 1803‧‧

1804‧‧‧線 Line 1804‧‧

1901‧‧‧線 Line 1901‧‧

1902‧‧‧線 Line 1902‧‧

1903‧‧‧線 Line 1903‧‧

1904‧‧‧線 Line 1904‧‧

2001‧‧‧線 2001‧‧‧ line

2004‧‧‧線 2004‧‧‧ line

第1圖為具有結合於載體的薄片的製品之示意頂視圖。 Figure 1 is a schematic top view of an article having a sheet bonded to a carrier.

第2圖為第1圖中的製品從箭頭3的方向看之示意端視圖。 Fig. 2 is a schematic end view of the article of Fig. 1 as seen from the direction of arrow 3.

第3圖為處理薄片與載體之步驟流程圖。 Figure 3 is a flow chart showing the steps of processing the sheet and the carrier.

第4圖為清洗片的步驟之示意流程圖。 Figure 4 is a schematic flow chart of the steps of cleaning the sheet.

第5圖為依據一個實施例具有結合於載體的薄片的製品之示意頂視圖。 Figure 5 is a schematic top plan view of an article having a sheet bonded to a carrier in accordance with one embodiment.

第6圖為依據另一個實施例具有結合於載體的薄片的製品之部分剖面圖。 Figure 6 is a partial cross-sectional view of an article having a sheet bonded to a carrier in accordance with another embodiment.

第7圖為依據另一個實施例具有結合於載體的薄片的製品之示意頂視圖。 Figure 7 is a schematic top plan view of an article having a sheet bonded to a carrier in accordance with another embodiment.

第8圖為具有從載體移出的所要部分的製品之示意頂視圖。 Figure 8 is a schematic top plan view of an article having the desired portion removed from the carrier.

第9圖為與第8圖類似但包括剖面的示意圖。 Figure 9 is a schematic view similar to Figure 8 but including a cross section.

第10圖為內部形成有排氣孔的製品之剖面圖。 Figure 10 is a cross-sectional view of a product having a vent hole formed therein.

第11圖為內部形成有排氣孔的製品之示意頂視圖。 Figure 11 is a schematic top plan view of an article having a vent hole formed therein.

第12圖為被從製品移出的所要部分56之剖面圖。 Figure 12 is a cross-sectional view of the desired portion 56 removed from the article.

第13圖為依據另一個實施例具有結合於載體的薄片的製品之頂視圖。 Figure 13 is a top plan view of an article having a sheet bonded to a carrier in accordance with another embodiment.

第14圖為第13圖中的製品沿著線14-14之剖面圖。 Figure 14 is a cross-sectional view of the article of Figure 13 taken along line 14-14.

第15圖為第13圖中具有結合輪廓的製品之頂視圖。 Figure 15 is a top plan view of the article having the combined profile in Figure 13.

第16圖為雷射與冷卻劑輸送頭之示意圖。 Figure 16 is a schematic illustration of a laser and coolant delivery head.

第17圖為雷射與冷卻劑輸送頭之另一個實施例之示意圖。 Figure 17 is a schematic illustration of another embodiment of a laser and coolant delivery head.

第18圖為圖示玻璃之各種組成元素在氟化氫銨中的溶解度之圖。 Figure 18 is a graph showing the solubility of various constituent elements of glass in ammonium hydrogen fluoride.

第19圖為圖示鋁溶解於具有各種組成元素的蝕刻溶液之圖。 Fig. 19 is a view showing the dissolution of aluminum in an etching solution having various constituent elements.

第20圖為圖示溶解於具有各種組成元素的蝕刻溶液中之鈣濃度圖。 Fig. 20 is a graph showing the calcium concentration dissolved in an etching solution having various constituent elements.

在以下的實施方式中,為了解釋而非限制的目的,提出揭示具體細節的示例性實施例,以提供對本發明之各種原理的透徹瞭解。然而,在擁有本揭示之效益後,對於本技術領域中具有通常技藝者而言,顯而易見的可以在其他偏離本文揭示之具體細節的實施例中實施本發明。此外,可以省略眾所周知的裝置、方法及材料之描述,以免混淆本發明之各種原理的描述。最後,在適用之處,相同的參照符號係指相同的元件。 In the following embodiments, the exemplary embodiments are set forth to provide a However, it will be apparent to those skilled in the art that <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; In addition, descriptions of well-known devices, methods, and materials may be omitted to avoid obscuring the description of the various principles of the invention. Finally, where applicable, the same reference symbols refer to the same elements.

本文中可以將範圍表達為從「約」一個特定值及/或至「約」另一個特定值。當表達這樣的範圍時,另一個實施例還包括從該一個特定值及/或至該另一個特定值。同樣地,當值被表達為近似值時,藉由使用先行詞「約」將可瞭解到,該特定值形成另一個實施例。將進一步瞭解到,每一範圍的端點既明顯關係到另一個端點,亦明顯獨立於另一個端點。 Ranges may be expressed herein as "about" a particular value and/or to "about" another particular value. When such a range is expressed, another embodiment also includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, it will be understood that the It will be further appreciated that the endpoints of each range are clearly related to the other endpoint and are distinctly distinct from the other endpoint.

本文中使用的方向性術語-例如上、下、右、左、前、後、頂、底-僅參照所繪圖式而述,並非意圖暗示絕對的方位。 The directional terms used herein, such as upper, lower, right, left, front, back, top, and bottom, are merely referenced to the drawing, and are not intended to imply absolute orientation.

除非另有明確的陳述,否則絕無意圖將本文中提出的任何方法解讀為需要以特定的順序進行各方法之步驟。因此,在方法請求項未實際陳述其步驟應遵循的順序時,或在申請專利範圍或描述中未以其他方式具體陳述將該等步驟限制於特定的順序時,絕無意圖在任何方面推斷出順序。這適用於任何可能的、非明文解釋的準則,包括:有關步驟的配置或操作流程的邏輯問題;從語法結構或標點符號衍生的字面意義;在說明書中描述的實施例之數量或類型。 Unless otherwise expressly stated, there is no intention to interpret any of the methods presented herein as a step in a particular order. Therefore, there is no intention to infer in any way when the method claims do not actually state the order in which the steps should be followed, or if the steps are not otherwise specifically stated in the scope of the patent application or the description. order. This applies to any possible, non-clearly interpreted criteria, including: logic questions regarding the configuration or operational flow of the steps; literal meaning derived from grammatical structures or punctuation; the number or type of embodiments described in the specification.

除非內文以其他方式清楚指明,否則本文中使用的單數型「一」及「該」亦包括複數的指示對象。因此,舉例來說,提及一「成分」亦包括具有二個或更多個這種成分的態樣,除非內文以其他方式清楚指明。 The singular "a" and "the", as used in the <RTIgt; Thus, for example, reference to a "component" also includes the appearance of two or more such elements unless the context clearly dictates otherwise.

一般性描述General description

參照第1圖與第2圖,將厚度12的載體10結合到薄片20,使得薄片20,即厚度22為300微米或更少者(包括但不限於例如10-50微米、50-100微米、100-150微米及150-300微米的厚度)能被利用於現存的裝置處理基本設施中。當載體10與薄片20互相結合時,它們的組合厚度24與較厚的片相同,而裝置處理設備原是為了較厚的片所設計的。舉例來說,假使處理設備原是為了700微米的片所設計,而且該薄片之厚度22為300微米,則可選擇厚度12為400 微米。 Referring to Figures 1 and 2, a carrier 10 of thickness 12 is bonded to the sheet 20 such that the sheet 20, i.e., having a thickness 22 of 300 microns or less (including but not limited to, for example, 10-50 microns, 50-100 microns, 100-150 microns and 150-300 microns thickness can be utilized in existing plant processing infrastructure. When the carrier 10 and the sheet 20 are bonded to each other, their combined thickness 24 is the same as that of the thicker sheet, and the apparatus processing apparatus was originally designed for thicker sheets. For example, if the processing device was originally designed for a 700 micron sheet and the thickness 22 of the sheet is 300 microns, the thickness 12 can be selected to be 400. Micron.

載體10可以由任何適當的材料製成,該材料包括例如玻璃或玻璃陶瓷。假使由玻璃製成,則載體10可以含有任何適當的組成物,該組成物包括鋁矽酸鹽、硼矽酸鹽、鋁硼矽酸鹽、鈉鈣矽酸鹽,而且載體10可以是含鹼金屬或無鹼金屬的,視其最終的應用而定。厚度12可以從約0.3至3 mm,例如0.3 mm、0.4 mm、0.5 mm、0.6 mm、0.65 mm、0.7 mm、1.0 mm、2.0 mm或3 mm,而且將取決於厚度22,如上所述。另外,載體可以由一個層(如圖示)或由結合在一起的多個層(包括多個薄片)製成。 The carrier 10 can be made of any suitable material including, for example, glass or glass ceramic. If made of glass, the carrier 10 may contain any suitable composition including aluminosilicate, borosilicate, aluminoboronate, sodium calcium citrate, and the carrier 10 may be alkali-containing. Metal or alkali-free metals, depending on their final application. The thickness 12 can be from about 0.3 to 3 mm, such as 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.65 mm, 0.7 mm, 1.0 mm, 2.0 mm or 3 mm, and will depend on the thickness 22, as described above. In addition, the carrier may be made of one layer (as shown) or a plurality of layers (including a plurality of sheets) joined together.

薄片20可以由任何適當的材料製成,該材料包括例如玻璃或玻璃陶瓷。當由玻璃製成時,薄片20可以含有任何適當的組成物,該組成物包括鋁矽酸鹽、硼矽酸鹽、鋁硼矽酸鹽、鈉鈣矽酸鹽,而且薄片20可以是含鹼金屬或無鹼金屬的,視其最終的應用而定。薄片20的厚度22為300微米或更少,如上所述。 Sheet 20 can be made of any suitable material including, for example, glass or glass ceramic. When made of glass, the sheet 20 may contain any suitable composition including aluminosilicate, borosilicate, aluminoboronate, sodium calcium citrate, and the sheet 20 may be alkali-containing. Metal or alkali-free metals, depending on their final application. The thickness 22 of the sheet 20 is 300 microns or less, as described above.

薄片20藉由區域40結合於載體,在區域40中薄片20的表面與載體10的表面之間有直接的接觸。在區域50中,載體10與玻璃薄片20之間沒有結合或有較不強的結合(如上所述),僅為了方便指稱,以下將區域50稱為非結合區域,即使區域50仍可能有一些弱的結合類型。非結合區域50具有周邊52,周邊52的外面配置結合區域40。 The sheet 20 is bonded to the carrier by a region 40 in which there is direct contact between the surface of the sheet 20 and the surface of the carrier 10. In the region 50, there is no bond or less strong bond between the carrier 10 and the glass sheet 20 (as described above), and for convenience of reference, the region 50 is hereinafter referred to as a non-bonded region, even though the region 50 may still have some Weak combination type. The non-bonding region 50 has a perimeter 52, and the outer region of the perimeter 52 is provided with a bonding region 40.

本觀念涉及藉由凡得瓦力將可撓性薄片20初始結合於載體10,然後提高某些區域的結合強度,同時保留處理 薄片/載體製品以形成裝置之後移出薄片的能力。本觀念進一步涉及:薄片20與載體10的清洗和表面準備,以便利結合;初始結合薄片20於載體10;強化在結合區域40的薄片20與載體10之間的初始結合;提供在非結合區域50薄片20從載體10的釋放能力;及取出薄片20的所要部分56。 The concept relates to the initial bonding of the flexible sheet 20 to the carrier 10 by van der Waals, and then increases the bonding strength of certain areas while retaining the treatment. The ability of the sheet/carrier article to remove the sheet after it has been formed into a device. The concept further relates to the cleaning and surface preparation of the sheet 20 and the carrier 10 to facilitate bonding; initial bonding of the sheet 20 to the carrier 10; strengthening of the initial bond between the sheet 20 of the bonding region 40 and the carrier 10; providing in the unbonded region The ability of the sheet 20 to be released from the carrier 10; and the desired portion 56 of the sheet 20 is removed.

一般製程流程General process

第3圖圖示本觀念的一般製程流程。載體流程102包括就尺寸、厚度及材料方面選擇適合的載體。然後在製程104清洗載體。在106,處理載體以便實現與薄片有不同結合強度的各個區域。然後在製程104a可以再度清洗載體,製程104a可以與製程104相同或不同。或者,取決於使用何種製程來實現與薄片有不同結合強度的各個區域,可以用不同的清洗製程來清洗載體,或完全不清洗。然後在初始結合製程108,載體已經準備好要與薄片結合。在製程流程122,就薄片的尺寸、厚度及材料方面選擇薄片。薄片的尺寸可以與載體大約相同、比載體稍微較大或稍微較小。在選擇之後,在124清洗薄片。清洗製程124可以與104中使用的相同,或者可以不同。清洗製程的目的是要減少在載體與薄片之結合面上的顆粒或其他雜質之數量。在108,薄片與載體的結合面互相接觸。在110進行強化載體與薄片之間的結合之製程。在112,載體/薄片製品進行處理,以在薄片上形成裝置。在114,可選擇地,可將載體與薄片切成較小的部分,且薄片仍然與載體結合。在114的切割(當存在時)可以發生在處理112之後、在處理112之前或在處理112的兩個不同步驟之間。 然後在116,從載體移出至少一部分的薄片。 Figure 3 illustrates the general process flow of this concept. Carrier process 102 includes selecting a suitable carrier for size, thickness, and material. The carrier is then cleaned in process 104. At 106, the carrier is processed to achieve various regions having different bonding strengths to the sheets. The carrier can then be cleaned again in process 104a, and process 104a can be the same or different than process 104. Alternatively, depending on which process is used to achieve various zones having different bonding strengths to the sheets, the cleaning process can be washed with different cleaning processes, or not at all. Then in the initial bonding process 108, the carrier is ready to be bonded to the sheet. In process flow 122, the sheets are selected in terms of the size, thickness, and material of the sheet. The size of the sheet may be about the same as the carrier, slightly larger or slightly smaller than the carrier. After the selection, the sheet is cleaned at 124. The cleaning process 124 can be the same as used in 104, or can be different. The purpose of the cleaning process is to reduce the amount of particles or other impurities on the interface between the carrier and the sheet. At 108, the bonding faces of the sheets and the carrier are in contact with each other. A process of enhancing the bond between the carrier and the sheet is performed at 110. At 112, the carrier/sheet article is processed to form a device on the sheet. At 114, alternatively, the carrier and the sheet can be cut into smaller portions and the sheet is still bonded to the carrier. The cutting at 114 (when present) may occur between process 112, before process 112, or between two different steps of process 112. At 116, at least a portion of the sheet is removed from the carrier.

載體與薄片選擇-實例1Carrier and Sheet Selection - Example 1

選擇的載體具有:0.7 mm的厚度;直徑200 mm的圓形晶圓;康寧公司(Corning Incorporated)的Eagle XG®玻璃之組成。選擇的薄片具有:100微米的厚度;比載體小的尺寸;康寧公司的Eagle XG®玻璃之組成。 The selected carrier has a thickness of 0.7 mm; a circular wafer with a diameter of 200 mm; and a composition of Corning Incorporated's Eagle XG® glass. The selected flakes have a thickness of 100 microns; a smaller size than the carrier; the composition of Corning's Eagle XG® glass.

玻璃清洗-104、104a、124Glass cleaning -104, 104a, 124

清洗製程主要是用來移除可能防礙薄片與載體之間結合的顆粒。然而,清洗製程也可以用來粗糙化載體的表面,並從而幫助形成非結合區域,如以下關於實現不同結合強度106的處理所述。清洗製程可以如同104發生在載體(及/或薄片,假使薄片也接受或交替地接受處理106)上的處理106之前、如同104a在這樣的處理106之後或在處理106之前與之後皆發生。清洗製程也可以在初始結合之前在薄片上進行,即使薄片並未進行如同106的表面處理。 The cleaning process is primarily used to remove particles that may interfere with the bond between the sheet and the carrier. However, the cleaning process can also be used to roughen the surface of the carrier and thereby help form a non-bonded region, as described below with respect to the process of achieving different bond strengths 106. The cleaning process may occur as 104 occurs before the process 106 on the carrier (and/or sheet, if the sheet also accepts or alternately accepts the process 106), as 104a after such process 106 or before and after process 106. The cleaning process can also be performed on the sheet prior to initial bonding, even if the sheet is not subjected to a surface treatment like 106.

清洗製程104通常包括多達四個步驟:第一步驟為一般性移除有機物;第二步驟為追加清洗;第三步驟為沖洗;及第四步驟為乾燥。 The cleaning process 104 typically includes up to four steps: a first step for general removal of organic matter; a second step for additional cleaning; a third step for rinsing; and a fourth step for drying.

第一步驟的一般性移除有機物可以包括以一或多種以下物質清洗:具有溶解臭氧的去離子(DI)水;氧(O2)電漿;硫酸過氧化物混合物;及/或紫外線(UV)臭氧。 The general removal of organics in the first step may include washing with one or more of the following: deionized (DI) water with dissolved ozone; oxygen (O 2 ) plasma; sulfuric acid peroxide mixture; and/or ultraviolet light (UV) )ozone.

第二步驟的追加清洗可以包括標準清洗-1(SC1)。SC1也可以是本技術領域中習知的「RCA清洗」。此製程可以包括氨水溶液,如同以下關於處理106的討論,該氨水溶液 可以使用某些材料來進行清洗及表面粗糙化。可以使用JTB100或Baker clean 100(可向J.T.Baker Corp取得)來取代SC1,JTB100或Baker clean 100不含氨水溶液,因此,對於某些材料在進行清洗時並不同時進行表面粗糙化,亦如同以下有關處理106所討論的。 The additional cleaning of the second step may include Standard Wash-1 (SC1). SC1 may also be a "RCA cleaning" as is known in the art. This process can include an aqueous ammonia solution, as discussed below with respect to process 106, which is an aqueous ammonia solution. Some materials can be used for cleaning and surface roughening. JTB100 or Baker clean 100 (available from JT Baker Corp) can be used instead of SC1. JTB100 or Baker clean 100 does not contain an aqueous ammonia solution. Therefore, for some materials, the surface is not roughened at the same time, as well as the following Regarding the processing 106 discussed.

沖洗可以在DI水中以快速排水沖洗(QDR)進行,例如使水流過整個片(載體或薄片,視何者適當)。 The rinsing can be carried out in DI water with a rapid drain flush (QDR), for example to allow water to flow through the entire sheet (carrier or sheet, as appropriate).

第四步驟為乾燥步驟,並且可以包括馬蘭根尼(Marangoni)型乾燥,包含異丙醇。 The fourth step is a drying step and may include a Marangoni type drying comprising isopropyl alcohol.

在一些例子中,就在108的初始結合之前進行的清洗製程104a與124可以包括移除有機材料的清洗作為初始結合之前的最後步驟。因此,如上所述與104有關的製程步驟將是有順序的,使得步驟2在步驟1之後。假使在清洗步驟1與2之間有任何明顯的遲滯這會是較佳的,藉以隨即收集有機物-來自儲存載體及/或薄片的環境。然而,假使步驟1與2之間的時間不長,或載體/薄片係儲存在含有少量有機顆粒的環境中,例如在潔淨室中,則步驟1與2可能以該順序發生,因此不需要恰好在108的初始結合之前清洗有機物。在所有其他的方面,清洗製程104a、124仍然與以上有關104的討論相同。 In some examples, the cleaning processes 104a and 124 performed just prior to the initial bonding of 108 may include cleaning to remove the organic material as the final step prior to initial bonding. Therefore, the process steps associated with 104 as described above will be sequential such that step 2 is after step 1. It would be preferable if there were any significant hysteresis between the cleaning steps 1 and 2, whereby the organic matter - the environment from the storage carrier and/or the sheet - was collected. However, if the time between steps 1 and 2 is not long, or the carrier/flakes are stored in an environment containing a small amount of organic particles, such as in a clean room, steps 1 and 2 may occur in this order, so it is not necessary to happen The organics were washed prior to the initial bonding of 108. In all other respects, the cleaning processes 104a, 124 are still the same as discussed above in relation to 104.

清洗實例-1Cleaning example-1

使每個載體與薄片(來自載體與薄片選擇-實例1)進行四步驟製程,其中基本的製程方法為在槽403中的溶解臭氧清洗步驟410、在槽402中的SC1步驟420、在槽403中 的沖洗步驟430及在槽404中的乾燥步驟440。除非另有陳述,否則所有的混合物是以體積比例配製。此處使用的NH4OH為14.5莫耳(在水中28 wt/wt NH3)。此處使用的H2O2在水中為30 wt%。DI或DIH2O係指去離子水,而且本文中這些用語可以交換使用。 Each carrier and sheet (from carrier and sheet selection - Example 1) was subjected to a four-step process wherein the basic process was a dissolved ozone purge step 410 in tank 403, SC1 step 420 in tank 402, at tank 403. The rinsing step 430 and the drying step 440 in the tank 404. All mixtures were formulated in volume ratios unless otherwise stated. The NH 4 OH used here was 14.5 moles (28 wt/wt NH 3 in water). H 2 O 2 used herein is 30 wt% in water. DI or DIH 2 O refers to deionized water, and these terms are used interchangeably herein.

第4圖為所使用機器之槽的配置,包括每個槽的相對位置、特定槽中進行的製程、通過該機器的製程流程及所使用的特殊參數。在此製程中,沒有使用槽401的蝕刻(包括氫氟酸/鹽酸蝕刻)。以下的步驟在各別說明的槽402至404中進行。 Figure 4 shows the configuration of the tanks used, including the relative position of each tank, the process performed in a particular tank, the process flow through the machine, and the specific parameters used. In this process, etching using the trench 401 (including hydrofluoric acid/hydrochloric acid etching) was not used. The following steps are performed in slots 402 through 404, each of which is described.

在第一步驟410中,將玻璃放入含有溶解臭氧(DIO3)的槽403中。詳細情況如下:具有溶解臭氧的DI水 In a first step 410, into the glass containing dissolved ozone (DIO 3) of the groove 403. The details are as follows: DI water with dissolved ozone

臭氧濃度:30 ppm Ozone concentration: 30 ppm

時間:10分鐘 Time: 10 minutes

溫度:環境溫度(大約22℃) Temperature: ambient temperature (approximately 22 ° C)

水的高流量:44 Lpm High water flow: 44 Lpm

在第二步驟420中,將樣品放入含有SC1溶液的槽402中。詳細情況如下:一份NH4OH:2份H2O2:40份DI水 In a second step 420, the sample is placed in a tank 402 containing an SC1 solution. The details are as follows: one part NH 4 OH: 2 parts H 2 O 2 : 40 parts DI water

溫度:65℃ Temperature: 65 ° C

時間:5分鐘 Time: 5 minutes

百萬赫茲超音波:350w,850 kHz Million Hertz Ultrasonic: 350w, 850 kHz

在第三步驟430中,將樣品放入槽403進行快速排 水沖洗(QDR),詳細情況如下:時間:10分鐘 In a third step 430, the sample is placed in slot 403 for quick platooning Water washing (QDR), the details are as follows: Time: 10 minutes

沖洗:DI水的高串流量為44 Lpm Flush: The high string flow of DI water is 44 Lpm

溫度:環境溫度(大約22℃) Temperature: ambient temperature (approximately 22 ° C)

在第四步驟440中,在IPA蒸汽中進行乾燥。詳細情況如下:時間:10分鐘(包括前串流沖洗及N2/IPA低流量乾燥,用馬蘭根尼型) In a fourth step 440, drying is carried out in IPA steam. The details are as follows: Time: 10 minutes (including pre-stream flushing and N 2 /IPA low-flow drying, using Marangani type)

時間:最後2分鐘150℃ N2高流量乾燥 Time: last 2 minutes 150 ° C N 2 high flow drying

清洗實例-2Cleaning example-2

取出來自以下釋放層應用-實例1的載體,並使該載體進行與以上清洗實例-1中概述的相同的清洗製程。 The carrier from the following release layer application - Example 1 was taken out and subjected to the same cleaning process as outlined in Cleaning Example-1 above.

實現不同結合強度區域的處理-106Processing of different bonding strength areas -106

貫穿本說明書,為了簡化解釋的目的,將實現不同結合-強度區域的處理描述為在載體上進行。然而,應注意到,這樣的處理也可以替代地在薄片上進行,或在載體與薄片兩者上皆進行。 Throughout the specification, the processing to achieve different bonding-strength regions is described as being performed on a carrier for the purpose of simplifying the explanation. However, it should be noted that such a treatment may alternatively be performed on the sheet or on both the carrier and the sheet.

形成非結合區域的一種方式是在載體上沉積材料,當處於裝置處理過程中預期的溫度時,薄片不會因配置而與載體黏結。所沉積的材料因而在載體與薄片的表面之間形成了釋放層。理想的是所沉積的材料是可清洗的(以便安然度過本文所述用以在結合區域中促進實現良好結合的清洗製程)、可以例如藉由蝕刻從載體移出、而且還能夠輕易地形成粗糙化的表面(例如當沉積的材料存在載體上時較佳係處於 結晶型式)以便利去除薄片與載體之間的結合。對於釋放層而言,適當的材料包括例如氧化鋅(ZnO)、摻雜0.2-4.0%鋁的氧化鋅(AZO)、摻雜0.2-4.0%鎵的氧化鋅(GZO)、氧化錫(SnO2)、氧化鋁(Al2O3)、氧化鎵(Ga2O3)、氧化鉍(Bi2O3)、F-SnO2、F-SiO2、TiON及TiCN。可以使用標準的沉積技術來將該等材料放置於載體上。 One way to form a non-bonded region is to deposit a material on the carrier that will not bond to the carrier due to the configuration when it is at the temperature expected during processing of the device. The deposited material thus forms a release layer between the carrier and the surface of the sheet. It is desirable that the deposited material be washable (to survive the cleaning process described herein to promote good bonding in the bond area), can be removed from the carrier, for example by etching, and can also be easily formed into a rough The surface (e.g., when the deposited material is present on the support is preferably in a crystalline form) to facilitate removal of the bond between the sheet and the carrier. For the release layer, suitable materials include, for example, zinc oxide (ZnO), zinc oxide (AZO) doped with 0.2-4.0% aluminum, zinc oxide (GZO) doped with 0.2-4.0% gallium, tin oxide (SnO 2 ) ), aluminum oxide (Al 2 O 3 ), gallium oxide (Ga 2 O 3 ), bismuth oxide (Bi 2 O 3 ), F-SnO 2 , F-SiO 2 , TiON, and TiCN. Standard materials can be used to place the materials on a carrier.

釋放層可以以增加薄片與載體之間的界面粗糙度的原理操作,藉以形成非結合區域。因此,釋放層可以包括表面粗糙度2 nm Ra(平均表面粗糙度),以便妨止非結合區域中有強力的結合。但是,當表面粗糙度增加時,薄片與載體之間陷入的氣體量也會增加,而導致如本文所討論的處理問題。因此,對於表面粗糙度的量可能要有實際可用的上限。此上限將很可能取決於用於初始結合的處理技術以及非結合區域的排氣,如本文所討論藉由使用排氣條或溝槽排氣。 The release layer can operate on the principle of increasing the interface roughness between the sheet and the carrier, thereby forming a non-bonded region. Therefore, the release layer can include surface roughness 2 nm Ra (average surface roughness) to prevent strong binding in unbound areas. However, as the surface roughness increases, the amount of gas trapped between the sheet and the carrier also increases, resulting in processing problems as discussed herein. Therefore, there may be a practically usable upper limit for the amount of surface roughness. This upper limit will most likely depend on the processing technique used for the initial bond and the exhaust of the unbonded zone, as discussed herein by using a vent strip or trench vent.

可以藉由酸蝕刻步驟來調整表面之粗糙度,以提高表面粗糙度。酸蝕刻可以作為獨立的步驟進行,或者可以藉由適當地選擇與釋放層材料相關的清洗溶液而與清洗步驟結合。然而,從製程觀點來看,在同一時間進行表面粗糙化與清洗是有利的。 The roughness of the surface can be adjusted by an acid etching step to increase the surface roughness. The acid etching can be performed as a separate step, or can be combined with the cleaning step by appropriately selecting a cleaning solution associated with the release layer material. However, from the viewpoint of process, it is advantageous to perform surface roughening and cleaning at the same time.

例如,使用AZO薄膜,蝕刻可以作為獨立的步驟藉由使用酸(例如在室溫具有pH為2的HCl溶液)的蝕刻來進行,之後為鹼性清洗(例如使用氫氧化四甲基銨(TMAH))。鹼性清洗可以在使用H2O2清洗、在羧酸緩衝液中具有TMAH的標準JTB100中進行。在一個實例中,使用具有30%的 H2O2、在羧酸緩衝液中的TMAH之JTB100,表面粗糙度被從2 nm降到1.1 nm。此外,此清洗溶液可立即被從AZO膜沖洗出,而有利地導致在載體被結合到薄片時及/或製品進行裝置處理時有少量的出氣。因此,當使用較少的、防止氣體陷入載體與薄片之間的量測時,此表面粗糙化與表面清洗的方式在某些例子中會是較佳的。 For example, using an AZO film, etching can be performed as a separate step by etching using an acid such as a HCl solution having a pH of 2 at room temperature, followed by alkaline cleaning (for example, using tetramethylammonium hydroxide (TMAH) )). Alkaline cleaning can be carried out in standard JTB 100 with H 2 O 2 cleaning and TMAH in carboxylic acid buffer. In one example, using JTB100 with 30% H 2 O 2 , TMAH in carboxylic acid buffer, the surface roughness was reduced from 2 nm to 1.1 nm. In addition, the cleaning solution can be flushed out of the AZO film immediately, advantageously resulting in a small amount of outgassing when the carrier is bonded to the sheet and/or when the article is processed by the device. Thus, the manner of surface roughening and surface cleaning may be preferred in some instances when less measurement is used to prevent gas from entering between the carrier and the sheet.

為了在一個步驟中進行清洗與粗糙化,對於例如AZO膜,可以使用SC1製程(40:1:2的DI:NH4OH:H2O2)清洗來將表面粗糙度從2.0 nm增加到37 nm Ra。在某些例子中,當使用進一步的、防止氣體陷入載體與薄片之間的量測時,結合的清洗與粗糙化可能是較佳的(其中製程簡化是需要的)。 In order to perform cleaning and roughening in one step, for example, an AZO film can be cleaned using an SC1 process (40:1:2 DI:NH 4 OH:H 2 O 2 ) to increase the surface roughness from 2.0 nm to 37. Nm Ra. In some instances, combined cleaning and roughening may be preferred when further measurements are taken to prevent gas from entering between the carrier and the sheet (where process simplification is desired).

或者,該釋放層可以以與玻璃薄片形成無OH鍵結的原理操作,而且不需要具有特殊的粗糙度來提供非結合區域;在這種類別中的材料可以包括例如氧化錫、TiO2、二氧化矽(SiO2)、耐火材料、SiN(氮化矽)、SiC、類鑽石碳、石墨碳、石墨烯、氮化鈦、氧化鋁、二氧化鈦(TiO2)、SiON(氮氧化矽)、F-SnO2、F-SiO2、及/或熔點<1000℃及/或應變點>約1000℃的那些材料。 Alternatively, the release layer can be operated on the principle of forming an OH-free bond with the glass flakes, and does not require special roughness to provide a non-bonded region; materials in this class can include, for example, tin oxide, TiO 2 , Cerium oxide (SiO 2 ), refractory, SiN (tantalum nitride), SiC, diamond-like carbon, graphitic carbon, graphene, titanium nitride, aluminum oxide, titanium dioxide (TiO 2 ), SiON (niobium oxynitride), F -SnO 2 , F-SiO 2 , and/or those having a melting point <1000 ° C and/or a strain point > about 1000 ° C.

應該選擇釋放層的厚度,使得釋放層不會在載體與薄片的結合表面之間產生縫隙而到達當結合表面處於接觸時薄片受到過度加壓的這種程度。薄片中過度的壓力可能會在嘗試將薄片與載體結合的過程中及/或在後續的裝置處理過程中造成薄片損壞。亦即,舉例來說,假設薄片具有平的表面 (即,面對載體的表面,而且在釋放層的區域中沒有凹處或凸起,該釋放層不應高傲地站在載體的結合表面上大於1微米,例如,薄片與載體的結合表面之間的縫隙應為例如1 nm、500 nm、200 nm、100 nm、50 nm、25 nm、15 nm、10 nm或5 nm。另一方面,釋放層需要具有充足的厚度,以便防止薄片與載體的表面結合。因此,在薄片與載體具有彼此相對且完全平的表面之情況中,釋放層應該具有≧0.2 nm的厚度。在其他的例子中,厚度從10到500 nm的釋放層是可接受的。在其他的例子中,厚度從100到400 nm的釋放層是可接受的;這些已經經過測試,而且發現到可允許結合區域中有足夠的結合,而且還提供非結合區域。在某些例子中,該釋放層可以部分地配置於載體及/或薄片內的凹處中。 The thickness of the release layer should be chosen such that the release layer does not create a gap between the carrier and the bonding surface of the sheet to the extent that the sheet is over pressurized when the bonding surface is in contact. Excessive pressure in the sheet may cause damage to the sheet during attempts to bond the sheet to the carrier and/or during subsequent device processing. That is, for example, assuming that the sheet has a flat surface (ie, facing the surface of the carrier, and there are no recesses or protrusions in the region of the release layer, the release layer should not stand proudly on the bonding surface of the carrier. More than 1 micron, for example, the gap between the sheet and the bonding surface of the carrier should be, for example 1 nm, 500 nm, 200 nm, 100 nm, 50 nm, 25 nm, 15 nm, 10 nm or 5 nm. On the other hand, the release layer needs to have a sufficient thickness to prevent the sheet from bonding to the surface of the carrier. Therefore, in the case where the sheet and the carrier have mutually opposite and completely flat surfaces, the release layer should have a thickness of ≧0.2 nm. In other examples, a release layer having a thickness from 10 to 500 nm is acceptable. In other examples, release layers having a thickness from 100 to 400 nm are acceptable; these have been tested and found to allow for sufficient binding in the binding region and also provide non-bonded regions. In some examples, the release layer can be partially disposed in a recess in the carrier and/or sheet.

可以將釋放層圖案化於比薄片20與載體10之間的整個接觸區域小的區域,以便允許選擇的部分在薄片與載體之間形成非結合區域50。例如參見第5圖,非結合區域50具有周邊52。亦即,釋放層可被圖案化,以允許釋放材料及/或表面處理被施加於區域50而非區域40。薄片20與載體10的剩餘部分,即結合區域40則結合在一起。因此,藉由沿著虛線5切割,可以從任何數量的所要部分56分離出任何數量的其他所要部分56,或其各種子集合,而且所有的所要部分56仍然與載體10結合。理想的是將製品2分割成為較小的子單元,以用於進一步的處理。在這樣的例子中,結合區域40與非結合區域50的這種配置有利之處在於,薄片20與載體 10等區段仍然在其周圍附近結合,使得製程流體將不會進入薄片20與載體10之間,製程流體可能會污染後續的製程,或是可能會將薄片20與載體10分離。 The release layer can be patterned into a smaller area than the entire contact area between the sheet 20 and the carrier 10 to allow the selected portion to form a non-bonded region 50 between the sheet and the carrier. See, for example, Figure 5, the non-bonded region 50 has a perimeter 52. That is, the release layer can be patterned to allow release of material and/or surface treatment to be applied to region 50 rather than region 40. The sheet 20 is bonded to the remainder of the carrier 10, i.e., the bonding area 40. Thus, by cutting along the dashed line 5, any number of other desired portions 56, or various subsets thereof, can be separated from any number of desired portions 56, and all of the desired portions 56 are still combined with the carrier 10. It is desirable to divide the article 2 into smaller subunits for further processing. In such an example, this configuration of the bonding region 40 and the non-bonding region 50 is advantageous in that the sheet 20 and the carrier The 10th section is still joined near its periphery so that process fluid will not enter between the sheet 20 and the carrier 10, the process fluid may contaminate subsequent processes, or the sheet 20 may be separated from the carrier 10.

雖然在第5圖中圖示為使一個薄片與一個載體結合,但是也可以將複數個薄片20與一個載體10結合,其中任何一個薄片20可以與載體10結合,而且載體10具有任何適當數量的、被結合區域40圍繞的非結合區域50。在此案例中,在從所要部分56分離出其他所要部分56之時,可以在不同的薄片20之結合區域40間分離載體10。 Although illustrated in Figure 5 to bond a sheet to a carrier, a plurality of sheets 20 may be combined with a carrier 10, any of which may be combined with carrier 10, and carrier 10 having any suitable number of The non-bonded area 50 surrounded by the bonded area 40. In this case, the carrier 10 can be separated between the bonding regions 40 of the different sheets 20 when the other desired portions 56 are separated from the desired portion 56.

形成非結合區域的第二種方式係透過使用在薄片與載體之間具有不同結合強度的不同材料。例如,SiNx可以使用於非結合區域,而SiO2可以使用於結合區域。為了形成這兩種不同的材料區域,可以使用以下的製程。可以藉由PECVD將SiNx膜沉積在載體的整個表面上。然後可以藉由PECVD在SINx的頂部上沉積SiO2膜,SiO2膜之圖案使得SiO2膜被配置於需要結合的區域。 A second way of forming a non-bonded region is through the use of different materials having different bonding strengths between the sheet and the carrier. For example, SiNx can be used in a non-bonded region, and SiO 2 can be used in a bonded region. In order to form these two different material regions, the following processes can be used. The SiNx film can be deposited on the entire surface of the carrier by PECVD. SiO 2 film can then be deposited on top of the SINx by PECVD, SiO 2 film is patterned such that the area of the SiO 2 film is disposed on the binding required.

形成非結合區域的第三種方式係使用O2電漿來提高材料的結合強度,否則材料會與薄片形成弱的結合。舉例來說,SiNx(氮化矽)可被沉積於整個載體表面上。可以使用陰影遮罩來遮蔽非結合區域,然後施加O2電漿到未遮蔽區域。藉由O2電漿處理的SiNx將形成足夠強的結合,以將玻璃薄片固持於載體,而未處理的SiNx將形成非結合區域。 A third way to form a non-bonded region is to use O 2 plasma to increase the bond strength of the material which would otherwise form a weak bond with the flakes. For example, SiNx (tantalum nitride) can be deposited on the entire surface of the carrier. A shadow mask can be used to mask the unbonded area and then O 2 plasma is applied to the unmasked area. The SiNx treated by the O 2 plasma will form a sufficiently strong bond to hold the glass flakes to the support while the untreated SiNx will form a non-bonded region.

形成非結合區域的第四種方式係經由使用載體、薄片或兩者的表面粗糙化。相對於結合區域中的表面粗糙度增 加非結合區域中的表面粗糙度,使得當在裝置處理或強化結合區域中的結合之過程中,一經加熱不會形成薄片與載體的結合。表面粗糙化可以與形成非結合區域的第一、第二或第三種方式的技術一起使用。舉例來說,至少在非結合區域中織構或粗糙化載體的表面。例如,可以使用酸溶液來處理載體表面,以提高載體表面的粗糙度。舉例來說,該溶液中的酸可以是H2SO4、NaF/H3PO4混合物、HCl或HNO3。其他的表面粗糙化方式包括例如噴砂及反應性離子蝕刻(RIE)。 A fourth way of forming a non-bonded region is by roughening the surface using a carrier, a sheet, or both. The surface roughness in the non-bonded region is increased with respect to the surface roughness in the bonded region such that the bonding of the sheet to the carrier is not formed upon heating as the device is processed or strengthened in the bonding in the bonded region. Surface roughening can be used with the techniques of the first, second or third modes of forming the unbonded regions. For example, the surface of the carrier is textured or roughened at least in the non-bonded regions. For example, an acid solution can be used to treat the surface of the support to increase the roughness of the surface of the support. For example, the acid in the solution can be H 2 SO 4 , NaF/H 3 PO 4 mixture, HCl or HNO 3 . Other surface roughening methods include, for example, sand blasting and reactive ion etching (RIE).

依據第四種方式的一個實施例,可以藉由在薄片與載體中所需之一者上印刷玻璃蝕刻乳劑而提供粗糙化表面。 According to one embodiment of the fourth aspect, the roughened surface can be provided by printing a glass etch emulsion on one of the desired ones of the wafer and the carrier.

更具體而言,反應性離子蝕刻(RIE)與溶液蝕刻製程(如Gateway)需要使用遮罩製程來形成結合區域及非結合區域。光微影術是昂貴但精確的。附加的方法如薄膜沉積也可以用來形成非結合區域。藉由化學氣相沉積(CVD)所沉積的膜,諸如摻雜氟的氧化錫(FTO)、碳化矽(SiC)及氮化矽(SiNx)需要昂貴的光微影圖案化及濕蝕刻或乾蝕刻來圖案化非結合區域。藉由物理氣相沉積(PVD)所沉積的膜,諸如摻雜氧化鋁的氧化鋅(AZO)與銦錫氧化物(ITO)可以被陰影遮蔽,以在一個製程步驟中圖案化並形成非結合區域。然而,所有的這些薄膜方法皆需要重大的真空沉積設備、微影術及蝕刻性能的資本投資。 More specifically, reactive ion etching (RIE) and solution etching processes (such as Gateway) require the use of a masking process to form bonding regions and non-bonding regions. Photolithography is expensive but precise. Additional methods such as thin film deposition can also be used to form the non-bonded regions. Films deposited by chemical vapor deposition (CVD), such as fluorine-doped tin oxide (FTO), tantalum carbide (SiC), and tantalum nitride (SiNx) require expensive photolithographic patterning and wet etching or drying Etching to pattern the unbonded regions. Membranes deposited by physical vapor deposition (PVD), such as alumina-doped zinc oxide (AZO) and indium tin oxide (ITO), can be shaded to pattern and form a non-bond in one process step region. However, all of these thin film methods require significant capital investment in vacuum deposition equipment, lithography, and etch performance.

將形成非結合區域與圖案化結合成為一個步驟的較不資本密集且成本較低的路徑係印刷玻璃蝕刻乳劑,該玻璃蝕刻乳劑可以蝕刻及粗糙化玻璃基板。玻璃蝕刻乳劑使用氟 化物鹽類作為蝕刻劑,且以惰性材料來遮蔽蝕刻或「冰凍」鈉鈣玻璃。藉由網版印刷蝕刻乳劑可以以低的成本輕易地在載體上形成圖案化的非結合區域。用以表面粗糙化的蝕刻乳劑方法給予蝕刻界定圖案的能力,以形成非結合區域,而且可以在界定的區域上誘生粗糙度,同時使剩餘的玻璃表面保留原始。此外,用以表面粗糙化的蝕刻乳劑方法為多方面適用之處在於可以調整乳劑的黏度,以便利網版印刷,而且在於可以訂製乳劑的組成,以產生用於不同玻璃組成所需的蝕刻粗糙度。 The less capital intensive and less costly path that combines the formation of the unbonded regions with the patterning into one step is a printed glass etch emulsion that can etch and roughen the glass substrate. Glass etching emulsion using fluorine The compound salt acts as an etchant and masks the etched or "frozen" soda lime glass with an inert material. The patterned non-bonded regions can be easily formed on the support at a low cost by screen printing the emulsion. The etch emulsion method for surface roughening imparts the ability to etch a defined pattern to form a non-bonded region, and can induce roughness on the defined regions while leaving the remaining glass surface intact. In addition, the etch emulsion method for surface roughening is versatile in that the viscosity of the emulsion can be adjusted to facilitate screen printing, and the composition of the emulsion can be customized to produce the etching required for different glass compositions. Roughness.

由於可以用於薄片及/或載體,將顯示器玻璃組合物製成擁有高的應變點、強大的化學耐久性及高的剛性。這些性質使得顯示器玻璃在蝕刻乳劑中的蝕刻速率遠低於鈉鈣玻璃在蝕刻乳劑中的蝕刻速率。此外,多成分的玻璃,諸如顯示器玻璃,可能無法被均勻地蝕刻。多成分玻璃的溶解度可由平衡溶解度理論來估算。康寧公司的Eagle XGTM玻璃(可向美國紐約州康寧地區的康寧公司取得)是一種鈣鋁硼矽酸鹽。估算Eagle XGTM對於各種高濃度蝕刻組成之溶解度一使用ChemEQL。(http://www.eawag.ch/research_e/surf/Researchgroups/sensors_and_analytic/chemeql.html)-且假設與允許沉澱的終端成員所組成之無窮大的固體接觸。第18圖圖示在氟化氫銨中的鈣(線1801,三角形數據點)、鋁(線1802,x數據點)、硼(線1803,正方形數據點)及矽(線1804,鑽石形數據點)之溶解度為pH之函數。pH在5以上時,鈣的溶解度遠低於其他 的氧化物成分。由於乳劑蝕刻通常接近中性的pH,以改良安全性及操作,故可預期鈣鋁硼矽酸鹽玻璃的選擇性蝕刻在蝕刻表面上留下氧化鈣與鹽沉澱。第19圖圖示各種蝕刻乳劑組成成分對鋁溶解度的影響。以氟化氫鈉(線1902,三角形數據點)取代氟化氫銨(線1901,正方形數據點),及以氯化銨(線1903,x數據點)部分取代氟化氫銨,對鋁的溶解度幾乎沒有改變。僅以另一個單價陽離子取代銨具有極少的影響(比較線1901及1902)。添加氯(線1903)輕微地抑制溶解的鋁濃度。然而,添加硫酸與硫酸鋇(如Armour蝕刻乳劑中使用的,線1904,鑽石形數據點)顯示鋁的溶解度下降(與氟化氫銨的線1901相比)。再者,如從第19圖與第20圖所見,隨著溶解鋁的總量減少(線1904),添加硫酸鋇與硫酸(線2004,鑽石形數據點)看起來有明顯增加的溶解鈣總量,如與氟化氫銨(線2001,正方形數據點)的案例相比。因此,含酸硫酸鋇與硫酸的酸蝕刻乳劑明顯地減少了鈣鋁硼矽酸鹽玻璃的優先蝕刻,如與只有使用氟化氫銨的蝕刻相比。硫酸鹽是良好的選擇,因為除了硫酸鋇與硫酸鍶之外,大多數的硫酸鹽都是高溶解性的,所以可以添加硫酸鋇作為遮罩材料。此外,應注意到,鈣的溶解度隨著pH降低而強烈地增加,所以可以藉由簡單地以硫酸調整pH而使優先蝕刻(其中鈣被蝕刻地較少)減少(使得鈣被蝕刻得較多,因而與剩餘的玻璃組成成分更均一)。 The display glass composition is made to have a high strain point, strong chemical durability, and high rigidity because it can be used for sheets and/or carriers. These properties make the etch rate of the display glass in the etched emulsion much lower than the etch rate of the soda lime glass in the etched emulsion. In addition, multi-component glasses, such as display glasses, may not be uniformly etched. The solubility of multi-component glass can be estimated from the equilibrium solubility theory. Corning's Eagle XG TM glass (available from Corning Incorporated in Corning, NY) is a calcium aluminum boron silicate. Estimation Eagle XG TM solubility of various compositions using a high concentration of the etching ChemEQL. (http://www.eawag.ch/research_e/surf/Researchgroups/sensors_and_analytic/chemeql.html) - and assumes contact with an infinite solid composed of terminal members that allow precipitation. Figure 18 illustrates calcium (line 1801, triangle data points), aluminum (line 1802, x data points), boron (line 1803, square data points), and enthalpy (line 1804, diamond-shaped data points) in ammonium hydrogen fluoride. The solubility is a function of pH. When the pH is 5 or more, the solubility of calcium is much lower than that of other oxide components. Since emulsion etching is typically close to a neutral pH for improved safety and handling, it is expected that selective etching of the calcium aluminum borosilicate glass leaves calcium oxide and salt precipitate on the etched surface. Figure 19 illustrates the effect of various etched emulsion components on the solubility of aluminum. Substitution of ammonium hydrogen fluoride (line 1902, triangular data points) with ammonium hydrogen fluoride (line 1901, square data points), and partial replacement of ammonium hydrogen fluoride with ammonium chloride (line 1903, x data points) showed little change in solubility to aluminum. Substitution of ammonium with only one monovalent cation has minimal effect (compare lines 1901 and 1902). The addition of chlorine (line 1903) slightly inhibited the dissolved aluminum concentration. However, the addition of sulfuric acid and barium sulphate (as used in the Armour etch emulsion, line 1904, diamond shaped data points) showed a decrease in the solubility of aluminum (compared to line 1901 of ammonium hydrogen fluoride). Furthermore, as seen from Figures 19 and 20, as the total amount of dissolved aluminum decreases (line 1904), the addition of barium sulfate and sulfuric acid (line 2004, diamond-shaped data points) appears to have a significant increase in dissolved calcium total. The amount, as compared to the case of ammonium hydrogen fluoride (line 2001, square data points). Thus, acid-etched emulsions containing acid barium sulfate and sulfuric acid significantly reduce the preferential etching of calcium aluminum borosilicate glass, as compared to etching using only ammonium hydrogen fluoride. Sulfate is a good choice because most of the sulfates are highly soluble except for barium sulfate and barium sulfate, so barium sulfate can be added as a masking material. In addition, it should be noted that the solubility of calcium increases strongly as the pH decreases, so that preferential etching (where calcium is less etched) can be reduced by simply adjusting the pH with sulfuric acid (so that calcium is etched more) And thus more uniform with the remaining glass composition).

玻璃蝕刻乳劑已被證實可產生非結合區域。藉由粗糙化載體表面產生非結合區域,而將載體(0.63 mm Eagle XG) 與薄玻璃(0.1 mm Eagle XG)結合,並產生結合區域,在500℃退火產生強的共價結合之前,可允許在結合區域的原始玻璃表面之凡得瓦結合。在此實例中,藉由微影術圖案化光阻遮罩,並且使用(10分鐘的蝕刻時間)市售的蝕刻乳劑(Armour蝕刻乳劑)來產生非結合區域。在用以產生以上實例的條件下使用蝕刻乳劑蝕刻鈣鋁硼矽酸鹽玻璃,並且發現可使表面粗糙度從0.34 nm增加到0.42 nm。使用典型的結合製程結合了0.1 mm的玻璃薄片,並留下非結合的中心區域及強結合的邊緣。此結合載體已經通過到達70毫托的真空循環、到達600℃的熱製程及通常為LTPS製程的溼製程。 Glass-etched emulsions have been shown to produce non-bonded regions. By roughening the surface of the carrier to create a non-bonded area, the carrier (0.63 mm Eagle XG) In combination with thin glass (0.1 mm Eagle XG) and creating a bond area, the van der Waals bonding of the original glass surface of the bond area is allowed before annealing at 500 °C produces strong covalent bonding. In this example, a photoresist mask was patterned by lithography and a commercially available etch emulsion (Armour etch emulsion) was used (10 minutes of etching time) to create a non-bonded region. The calcium aluminum borosilicate glass was etched using an etching emulsion under the conditions used to produce the above examples, and it was found that the surface roughness can be increased from 0.34 nm to 0.42 nm. A typical bonding process was used to combine 0.1 mm glass flakes with a non-bonded central area and strongly bonded edges. This bonded carrier has passed through a vacuum cycle of 70 mTorr, a thermal process up to 600 °C, and a wet process typically LTPS process.

可以透過各種印刷製程(如網版印刷、噴墨印刷或轉移印刷)來將蝕刻乳劑施加於界定的圖案,該等印刷製程將蝕刻膏劑施加到載體的區域,以產生非結合區域。網版印刷係一種模板印刷方法,其中在橡膠滾軸擊打過程中經由填充葉片或橡膠滾軸迫使蝕刻乳劑穿過模板的開放區域而到達載體上。施加蝕刻乳劑持續一段預定的時間,以達到所需的粗糙度。可以藉由改變蝕刻乳劑的施加時間、溫度或組成來改變粗糙度。例如,在室溫的施加時間可以從2到20分鐘。在乳劑蝕刻之後清洗載體,通常使用加熱的鹼性水溶液,且有或無機械攪拌,如刷洗、超音波或百萬赫茲超音波攪拌。在沖洗之後,在標準清洗1(SC1)溶液中又額外地清洗基板,該SC1溶液係由DI水、鹼(如氫氧化銨或氫氧化四甲基銨)及過氧化氫所組成的。然後使載體與薄玻璃部分接觸而形成凡得瓦結合,並且在450℃以上(例如500℃)熱處理,以 在薄玻璃與載體之間產生共價結合。 The etch emulsion can be applied to a defined pattern by various printing processes, such as screen printing, ink jet printing, or transfer printing, which apply an etch paste to the area of the carrier to create a non-bonded area. Screen printing is a stencil printing process in which an etched emulsion is forced through an open area of the stencil to reach the carrier via a filling blade or rubber roller during rubber roller striking. The etch emulsion is applied for a predetermined period of time to achieve the desired roughness. The roughness can be varied by varying the application time, temperature or composition of the etched emulsion. For example, the application time at room temperature can be from 2 to 20 minutes. The carrier is washed after the emulsion is etched, typically using a heated aqueous alkaline solution with or without mechanical agitation such as brushing, ultrasonic or megahertz ultrasonic agitation. After rinsing, the substrate is additionally cleaned in a standard wash 1 (SC1) solution consisting of DI water, a base such as ammonium hydroxide or tetramethylammonium hydroxide, and hydrogen peroxide. The carrier is then contacted with a thin glass portion to form a van der Waals bond, and heat treated at 450 ° C or higher (eg, 500 ° C) to A covalent bond is produced between the thin glass and the carrier.

依據第四種方式的第二實施例,可以使用大氣壓反應性離子蝕刻(AP-RIE)。可以利用AP-RIE藉由使用陰影遮罩法(Shadow Mask method)或聚合物光阻法(Polymer Photoresist method)來粗糙化玻璃載體區域。這些薄膜方法需要重大的資本投資。若製造商已經擁有該處理設備,則製造商可以利用現存的處理設備中的資本投資,同時獲得玻璃薄片用於PV、OLED、LCD、及其他應用的製造優勢。 According to a second embodiment of the fourth mode, atmospheric pressure reactive ion etching (AP-RIE) can be used. The glass carrier region can be roughened by using the AP-RIE by using a shadow mask method or a polymer photoresist method. These thin film methods require significant capital investment. If the manufacturer already owns the processing equipment, the manufacturer can leverage the capital investment in existing processing equipment while gaining the manufacturing advantages of glass flakes for PV, OLED, LCD, and other applications.

AP-RIE係用於微製造的技術。這種製程使用化學反應性電漿來從基板移除材料。在此製程中,電漿係利用低壓(典型為真空)藉由電磁場產生。來自電漿的高能量離子攻擊基板表面並且產生表面粗糙度。使用指向界定用於粗糙化的區域(即需要非結合區域之處)之電漿槍或噴嘴來輸送AP-RIE。電漿使用兩種方法附著於曝露的區域。為此目的所使用的適當反應性氣體為NF3、CF4、C2F6、SF6或任何一般的氟氣體。現在將描述用以進行AP-RIE的陰影遮罩法及聚合物光阻法。在這些方法的描述中,載體係被描述為被蝕刻以形成用於非結合區域的粗糙化區域者。然而,取決於薄片的最終應用,薄片也可以是或替代性地為被蝕刻以形成用於非結合區域的適當表面粗糙度者。 AP-RIE is a technology used in microfabrication. This process uses chemically reactive plasma to remove material from the substrate. In this process, the plasma is generated by an electromagnetic field using a low pressure (typically a vacuum). High energy ions from the plasma attack the surface of the substrate and create surface roughness. The AP-RIE is delivered using a plasma gun or nozzle directed to the area defined for roughening (ie where a non-bonded area is required). The plasma is attached to the exposed area using two methods. Suitable reactive gases for this purpose are NF 3 , CF 4 , C 2 F 6 , SF 6 or any general fluorine gas. The shadow mask method and the polymer photoresist method for performing AP-RIE will now be described. In the description of these methods, the carrier is described as being etched to form a roughened region for the unbonded region. However, depending on the final application of the sheet, the sheet may also or alternatively be etched to form a suitable surface roughness for the unbonded regions.

陰影遮罩法 Shadow mask method

陰影遮罩法的成本比聚合物光阻法低,至少部分如此,因為製程步驟較少,而且需要較少的設備。遮罩材料可以是幾種不容易被蝕刻的材料類型,諸如金屬、塑膠、聚合 物或陶瓷。然而,陰影遮罩法可能會比光阻法不精確,因此,對於某些應用不太適合。更具體來說,陰影遮罩法產生的曝露邊緣之界定不如聚合物光阻法產生的邊緣之界定清楚。 The cost of the shadow mask method is lower than that of the polymer photoresist method, at least in part, because there are fewer process steps and less equipment is required. The mask material can be of several types that are not easily etched, such as metal, plastic, polymerization. Object or ceramic. However, the shadow mask method may be inaccurate than the photoresist method and, therefore, is not suitable for some applications. More specifically, the definition of the exposed edge produced by the shadow mask method is not as well defined as the edge produced by the polymer photoresist method.

進行陰影遮罩法的程序如下。將遮罩放在玻璃載體上,然後使用AP-RIE電漿來蝕刻曝露的玻璃載體區域。然後從玻璃載體移出遮罩。以及最後,清洗玻璃載體以去除在結合區域中妨礙玻璃薄片與載體之間結合的顆粒,該等結合區域與因此產生的非結合區域相鄰。 The procedure for performing the shadow mask method is as follows. The mask was placed on a glass carrier and the exposed glass carrier region was etched using an AP-RIE plasma. The mask is then removed from the glass carrier. And finally, the glass carrier is cleaned to remove particles that interfere with bonding between the glass sheet and the carrier in the bonding region, the bonding regions being adjacent to the unbonded regions thus created.

聚合物光阻法 Polymer photoresist method

聚合物光阻法的成本比陰影遮罩法高,至少部分如此,因為涉及較多的資本投資,而且製程步驟較多。然而,此方法比陰影遮罩法更精確,因此,可以更好地適用於某些應用。聚合物光阻法產生的曝露邊緣比陰影遮罩法產生的曝露邊緣界定地更清楚。進行聚合物光阻法的程序如下。將聚合物光阻沉積於玻璃載體上,以便遮蔽所需的結合區域。進行光微影法(曝光與顯影光阻)來界定所需結合區域的圖案,其中載體的表面將被粗糙化。AP-RIE電漿蝕刻係於玻璃載體的曝露區域上進行。曝光可以從玻璃的正面或背面進行。在任一案例中,聚合物係保護將是結合區域的區域。 The cost of the polymer photoresist method is higher than the shadow mask method, at least in part, because it involves more capital investment and more process steps. However, this method is more accurate than the shadow mask method and, therefore, can be better adapted to certain applications. The exposed edge produced by the polymer photoresist method is more clearly defined than the exposed edge produced by the shadow mask method. The procedure for performing the polymer photoresist method is as follows. The polymer is photoresist deposited on a glass carrier to mask the desired bonding area. Photolithography (exposure and development photoresist) is performed to define the pattern of the desired bonding area where the surface of the carrier will be roughened. The AP-RIE plasma etching is performed on the exposed area of the glass carrier. Exposure can be done from the front or back of the glass. In either case, the polymer system protection will be the area of the bonding zone.

然後以聚合物光阻去除劑(如氧灰分或硫氫過氧化物(SPM)混合物)去除聚合物。最後,清洗玻璃載體,以去除在所需的結合區域中妨礙玻璃薄片與載體之間結合的顆粒。 The polymer is then removed with a polymeric photoresist remover such as an oxygen ash or a sulfur hydroperoxide (SPM) mixture. Finally, the glass carrier is cleaned to remove particles that interfere with the bonding between the glass flakes and the carrier in the desired bonding area.

在上述AP-RIE方法之後適用的清洗方法可以包括 清潔劑洗滌或RCA類型清洗(如本技術領域中習知的)。在蝕刻完成之後可以採用這些傳統的清洗方法。清洗製程主要是用來去除在所需結合區域中可能妨礙薄片與載體之間結合的顆粒。清洗製程通常包括去除有機物、追加的清洗、沖洗及乾燥。 Suitable cleaning methods after the above AP-RIE method may include Detergent cleaning or RCA type cleaning (as is known in the art). These conventional cleaning methods can be employed after the etching is completed. The cleaning process is primarily used to remove particles that may interfere with the bond between the sheet and the carrier in the desired bonding area. Cleaning processes typically involve removal of organics, additional cleaning, rinsing, and drying.

清潔劑洗滌法使用清潔劑在超音波中去除顆粒與輕的殘餘物,該清潔劑例如KG洗滌、Parker 225或Parker 225X。可以藉由清潔劑在百萬赫茲超音波中去除次微米顆粒,該清潔劑例如KG洗滌、Parker 225或Parker 225X。沖洗可以包括在室溫至80℃下在超音波或百萬赫茲超音波中的DI水沖洗。沖洗也可以包括用IPA沖洗。在沖洗之後,將載體玻璃乾燥。陰影遮罩的載體可以以使用壓縮空氣的空氣刀來乾燥。聚合物光阻形成的載體可以用氮氣乾燥。在任一案例中,乾燥可以在馬蘭根尼乾燥機中進行。 Detergent cleaning removes particles and light residues in the ultrasonic waves using a cleaning agent such as KG Wash, Parker 225 or Parker 225X. Submicron particles can be removed in a megahertz ultrasonic wave by a cleaning agent such as KG Wash, Parker 225 or Parker 225X. Flushing can include DI water rinsing in ultrasonic or megahertz ultrasonic waves at room temperature to 80 °C. Flushing can also include flushing with IPA. After rinsing, the carrier glass is dried. The carrier of the shadow mask can be dried with an air knife using compressed air. The carrier formed by the polymer photoresist can be dried with nitrogen. In either case, drying can be carried out in a Marangani dryer.

RCA清洗法包括三個清洗步驟、沖洗及乾燥。第一清洗步驟可以用SPM進行,以去除重的有機物。第二清洗步驟可以包括標準清洗1(SC1),其中使用了視需要稀釋的氨水、過氧化氫及DI水溶液,且有或無超音波或百萬赫茲超音波振盪。此清洗步驟去除小的顆粒與次微米顆粒。在此第二清洗步驟之後,沖洗可以在有或無超音波或百萬赫茲超音波振盪的DI水中進行。可選擇地,在此第二清洗步驟過程中,可以進行使用刷子的洗滌。刷子的材料可以使用尼龍、PVA或PVDF。假使使用刷洗,則之後可以在室溫至80℃下在超音波或百萬赫茲超音波振盪中以DI水進行另一次沖洗。第三 清洗步驟包括標準清洗2(SC2),用以去除金屬污染物。SC2包括在室溫至80℃下有超音波或百萬赫茲超音波振盪的HCL:H2O2:DI或HCL:DI溶液,且持續任何需要的時間量。在第三清洗步驟之後,在有或無超音波或百萬赫茲超音波振盪的DI水中沖洗樣品。最後,以使用壓縮空氣的空氣刀乾燥樣品。或者,可以以使用氮的馬蘭根尼乾燥機來乾燥樣品。 The RCA cleaning process consists of three washing steps, rinsing and drying. The first cleaning step can be performed with SPM to remove heavy organic matter. The second cleaning step may include Standard Wash 1 (SC1) in which aqueous ammonia, hydrogen peroxide, and DI aqueous solutions, as needed, are used with or without ultrasonic or megahertz ultrasonic oscillations. This cleaning step removes small particles from sub-micron particles. After this second cleaning step, the rinsing can be carried out in DI water with or without ultrasonic or megahertz ultrasonic oscillations. Alternatively, washing using a brush may be performed during this second washing step. The material of the brush can be nylon, PVA or PVDF. If brushing is used, then another rinse with DI water can be carried out in an ultrasonic or megahertz ultrasonic oscillation at room temperature to 80 °C. The third cleaning step includes Standard Cleaning 2 (SC2) to remove metal contaminants. SC2 includes HCL:H 2 O 2 :DI or HCL:DI solutions with ultrasonic or megahertz ultrasonic oscillations at room temperature to 80 ° C for any desired amount of time. After the third cleaning step, the sample is rinsed in DI water with or without ultrasonic or megahertz ultrasonic oscillations. Finally, the sample was dried with an air knife using compressed air. Alternatively, the sample can be dried in a Marangani dryer using nitrogen.

形成非結合區域的第五種方式涉及光微影製程的使用。將與薄片形成弱結合的材料沉積在載體上;例如,此材料可以用SiNx。將SiNx圖案化,例如藉由光微影製程,藉以移除結合區域中的SiNx,從而允許薄片與載體表面接觸並結合。 A fifth way to form a non-bonded region involves the use of a photolithography process. A material that forms a weak bond with the sheet is deposited on the carrier; for example, SiNx can be used for this material. The SiNx is patterned, for example by photolithography, to remove SiNx in the bonded regions, thereby allowing the wafer to contact and bond with the surface of the carrier.

以上任何形成非結合區域的方法可以配合邊緣結合80使用。參見第6圖,可以藉由雷射熔合薄片20與載體10而形成邊緣結合80,或是藉由例如在薄片20邊緣與載體10表面之間施加熔塊或聚醯亞胺(或其他能夠承受預期的裝置處理期間的溫度之黏著劑)來形成邊緣結合80。如圖示,薄片20的邊緣從載體10的邊緣凹進,以幫助防止處理設備或其他方面對薄片20造成損害。邊緣結合80可以往下延伸到載體的邊緣,如在區域81上方,以降低處理流體進入薄片20與載體10之間的機會,處理流體進入薄片20與載體10之間將會提高薄片20脫離載體10的風險。邊緣結合80在薄片20為彎曲的案例中可以是有用,否則薄片20在邊緣無法完全與載體10的表面外形相符;這可能是使用排氣條70的狀況。在任何情況中,使用邊緣結合80皆有助於提高製品的可靠 度。雖然第6圖圖示薄片與載體之間有釋放層30,但此作法可以與任何其他形成非結合區域的方式一起使用。再者,邊緣結合80可以提供薄片20與載體10之間完全的結合,或者可以補足薄片20與載體10之間其他的結合區域,例如如本文所述形成的結合區域。 Any of the above methods of forming a non-bonded region can be used in conjunction with the edge bond 80. Referring to Fig. 6, the edge bond 80 can be formed by laser fusing the sheet 20 with the carrier 10, or by applying a frit or polyimine (e.g., between the edge of the sheet 20 and the surface of the carrier 10). The adhesive of the temperature during the expected processing of the device) forms the edge bond 80. As illustrated, the edges of the sheet 20 are recessed from the edges of the carrier 10 to help prevent damage to the sheet 20 by processing equipment or otherwise. The edge bond 80 can extend down to the edge of the carrier, such as above the region 81, to reduce the chance of process fluid entering between the sheet 20 and the carrier 10, and the flow of treatment between the sheet 20 and the carrier 10 will increase the release of the sheet 20 from the carrier. 10 risks. The edge bond 80 may be useful in cases where the sheet 20 is curved, otherwise the sheet 20 may not fully conform to the surface topography of the carrier 10 at the edges; this may be the condition in which the vent strip 70 is used. In any case, the use of edge bonds 80 helps to improve the reliability of the product. degree. Although Figure 6 illustrates the release layer 30 between the sheet and the carrier, this practice can be used with any other means of forming a non-bonded region. Further, the edge bond 80 can provide a complete bond between the sheet 20 and the carrier 10, or can complement other bond areas between the sheet 20 and the carrier 10, such as a bond area formed as described herein.

釋放層應用-實例1Release Layer Application - Example 1

取出來自清洗實例1的載體並將AZO濺鍍至載體的非結合區域上。亦即,使用遮罩來阻擋濺鍍的AZO塗覆於載體的結合區域。在壓力10 mT、1% O2的氬氣氣流及2.5 W/cm2的RF功率密度(在標靶)下,藉由RF濺鍍從0.5 wt%的AZO標靶沉積入AZO。 The carrier from Cleaning Example 1 was taken out and AZO was sputtered onto the unbonded areas of the carrier. That is, a mask is used to block the sputtered AZO from being applied to the bonding region of the carrier. AZO was deposited from a 0.5 wt% AZO target by RF sputtering at an argon gas flow of 10 mT, 1% O 2 and an RF power density of 2.5 W/cm 2 (at the target).

選擇AZO是因為AZO可以容易地從低成本的金屬標靶被反應性濺鍍,而形成結晶的AZO,該結晶的AZO可以輕易地被粗糙化、清洗、及移除(圖案化)。結晶的AZO之晶粒結構可以提供適當的表面粗糙度。此外,藉由酸性溶液或鹼性溶液任一者可以立即粗糙化或移除AZO。具體而言,沉積後的粗糙化可以藉由酸性蝕刻後接續鹼性清洗或同時清洗與移除有機物的鹼性蝕刻任一者來完成。蝕刻係於室溫下使用pH為2的HCl溶液進行,其中以5秒的蝕刻時間將表面粗糙度從2.9 nm Ra增加到了9.0 nm Ra。 AZO was chosen because AZO can be easily reactively sputtered from low cost metal targets to form crystalline AZO, which can be easily roughened, cleaned, and removed (patterned). The grain structure of the crystallized AZO can provide an appropriate surface roughness. Further, AZO can be immediately roughened or removed by either an acidic solution or an alkaline solution. Specifically, the roughening after deposition can be performed by either an alkaline etching followed by an alkaline etching or an alkaline etching which simultaneously cleans and removes organic matter. The etching was carried out at room temperature using a pH 2 HCl solution with a surface roughness increased from 2.9 nm Ra to 9.0 nm Ra with an etch time of 5 seconds.

初始結合製程108Initial bonding process 108

為了準備初始結合上面具有釋放層的片(薄片及/或載體),可以使用前加熱步驟。前加熱步驟的一個目的是在清洗及/或釋放層形成之後驅離任何剩餘的揮發物。前加熱步驟 有利地在一溫度下加熱薄片,且該溫度係接近或高於預期的結合載體/薄片製品之後續裝置處理過程中的溫度。假使在前加熱過程中使用的溫度低於預期的裝置處理溫度,則另外的揮發物可能會在裝置處理過程中被驅離,而導致氣體累積在非結合區域中,因而可能在某些例子中造成薄片從載體脫離、或薄片破損。即使薄片沒有分離或斷裂,但這樣的氣體可能會造成薄片凸起,而使得薄片不適合在例如需要某種片平坦度的設備或方法中進行處理。 In order to prepare for the initial bonding of the sheet (sheet and/or carrier) having the release layer thereon, a pre-heating step can be used. One purpose of the pre-heating step is to drive off any remaining volatiles after the cleaning and/or release layer is formed. Preheating step Advantageously, the sheet is heated at a temperature that is near or above the temperature during the subsequent processing of the combined carrier/sheet product. If the temperature used in the pre-heating process is lower than the expected device processing temperature, additional volatiles may be driven away during the processing of the device, causing the gas to accumulate in the unbonded region, and thus may be in some instances. The sheet is detached from the carrier or the sheet is broken. Even if the sheet is not separated or broken, such a gas may cause the sheet to bulge, making the sheet unsuitable for processing in, for example, an apparatus or method that requires some kind of sheet flatness.

在正要結合之前,可以使用加熱步驟來最小化或防止結合表面上形成吸附的水,這大大地改良了真空與高溫下的性能,並且允許在載體與薄玻璃之間形成強的結合。 A heating step can be used to minimize or prevent the formation of adsorbed water on the bonding surface before being combined, which greatly improves the performance at vacuum and high temperatures and allows for a strong bond between the carrier and the thin glass.

在結合製程過程中誘生的陷入氣體,諸如空氣、水或揮發物,會在客製處理過程中由於溫度上升(150℃-600℃)或真空環境而膨脹,此會造成薄玻璃以衰退或干擾客製製程或製程設備的方式分離、破裂或凸起。然而,需要羥基終端表面來結合玻璃表面,以實現薄玻璃與載體之間的結合。在從非結合(粗糙化)區域移除物理吸附及化學吸附水而不移除結合區域所需的矽醇終端基團之間有微妙的平衡,以維持薄玻璃與載體之間的結合。 The trapped gas, such as air, water or volatiles, induced during the combined process will expand during the custom process due to temperature rise (150 ° C - 600 ° C) or vacuum environment, which will cause the thin glass to decay or Separation, cracking, or bulging in a manner that interferes with custom processes or process equipment. However, a hydroxyl terminal surface is required to bond the glass surface to achieve a bond between the thin glass and the carrier. There is a delicate balance between the sterol termination groups required to remove the physically adsorbed and chemisorbed water from the unbound (roughened) regions without removing the bound regions to maintain the bond between the thin glass and the support.

這種平衡可以藉由準備以下的結合表面來實現。首先在現有的清洗線中以鹼性清潔劑與超音波攪拌及DI水沖洗來清洗載體與薄玻璃。接著為O2電漿清洗,並且在75℃的稀釋SC1浴(40:1:2的DI:NH4OH:H2O2或40:1:2的DI:JTB100:H2O2)中進行10分鐘。取決於非結合表面的本質, 載體與薄玻璃可接受150℃ 1分鐘的加熱板烘烤,以移除物理吸附的水,或是450℃ 1小時的真空退火,以移除化學吸附的水。在移除自由水之後,馬上讓薄玻璃與載體接觸,以藉由凡得瓦力而預先結合,並在T>450℃做加熱處理,以形成共價結合。 This balance can be achieved by preparing the following bonding surfaces. The carrier and the thin glass are first cleaned in an existing cleaning line with an alkaline detergent and ultrasonic agitation and DI water rinse. This was followed by O 2 plasma cleaning and in a diluted SC1 bath at 75 ° C (40:1:2 DI: NH 4 OH:H 2 O 2 or 40:1:2 DI:JTB100:H 2 O 2 ) Take 10 minutes. Depending on the nature of the non-bonded surface, the support and the thin glass can be baked at 150 ° C for 1 minute with hot plates to remove physically adsorbed water, or vacuum annealing at 450 ° C for 1 hour to remove chemisorbed water. Immediately after the free water is removed, the thin glass is brought into contact with the carrier to be pre-bonded by van der Waals and heat treated at T > 450 ° C to form a covalent bond.

在SC1清洗製程之後,可預期玻璃表面會有飽和的羥基(~4.6 OH/nm2,在縮合之後應形成2.3 H2O/nm2)、覆蓋有單層緊密結合的氫鍵水(~15 H2O/nm2)及較鬆散結合的自由水(~2.5個單層)。自由水在真空中低至25℃時會消失。據報導在真空中加熱到190℃可移除單層的氫鍵水。額外加熱到400℃以上可移除除了分離的單一矽醇基團以外所有的基團,但這會降低表面羥化度。將需要超過1000℃的溫度來移除全部的羥基基團,但是依據本揭示,並不需要如此來獲得載體上的薄片之適當性能。 After the SC1 cleaning process, it is expected that the surface of the glass will have saturated hydroxyl groups (~4.6 OH/nm2, which should form 2.3 H 2 O/nm 2 after condensation), and be covered with a single layer of tightly bound hydrogen-bonded water (~15 H 2 O/nm 2) and loosely combined free water (~2.5 single layers). Free water will disappear as low as 25 ° C in a vacuum. It has been reported that heating to 190 ° C in a vacuum removes a single layer of hydrogen-bonded water. Additional heating above 400 °C removes all groups except the isolated single sterol group, but this reduces the degree of surface hydroxylation. A temperature in excess of 1000 ° C will be required to remove all of the hydroxyl groups, but in accordance with the present disclosure, it is not necessary to obtain the proper properties of the sheets on the support.

藉由諸如摻雜氧化鋁的氧化鋅(AZO)沉積的加成製程、或諸如反應性離子蝕刻的消減製程、或蝕刻乳劑來形成非結合區域會形成提高的表面粗糙度,而且可以導致可增加表面上的吸附水量及其他氣體量的化學變化。尤其,以含有NH4OH與H2O2的SC1清洗AZO會導致形成Zn(OH)2的反應。此反應大大地增加了表面粗糙度,並產生白色的模糊表面。一經加熱,Zn(OH)2在僅125℃即開始分解形成ZnO與水。氫氧化鋅也會吸附來自空氣的二氧化碳,而形成到300℃為穩定的碳酸鋅。 Forming a non-bonded region by an addition process such as alumina-doped zinc oxide (AZO) deposition, or a subtractive process such as reactive ion etching, or etching an emulsion results in increased surface roughness and can result in an increase Chemical changes in the amount of adsorbed water and other gases on the surface. In particular, cleaning AZO with SC1 containing NH 4 OH and H 2 O 2 results in a reaction to form Zn(OH) 2 . This reaction greatly increases the surface roughness and produces a white, blurred surface. Upon heating, Zn(OH) 2 begins to decompose at 125 ° C to form ZnO and water. Zinc hydroxide also adsorbs carbon dioxide from the air to form a stable zinc carbonate at 300 °C.

此自由水、氫鍵結水及矽烷物種對於薄玻璃在載體 上(由強力結合的周邊與非結合中心所組成)之真空相容性的影響可以藉由估算每個物種中的水量及在LTPS製程典型的各種PVD、CVD及摻雜劑活化步驟下藉由理想氣體定律計算水膨脹時所施加的壓力來描述。 This free water, hydrogen bonded water and decane species for thin glass in the carrier The effect of vacuum compatibility on the upper (composed of strongly bonded peripheral and non-bonded centers) can be achieved by estimating the amount of water in each species and by various PVD, CVD, and dopant activation steps typical of the LTPS process. The ideal gas law is used to calculate the pressure applied when water is expanded.

冷凝水的蒸汽化應該產生104到106托的壓力差。此壓力差將導致薄玻璃彎曲及脫離載體。此偏斜增加了載體與薄片之間的體積,減少了壓力差。施加的壓力與產生的薄玻璃偏斜使薄玻璃處於張力。假使張力太大,則薄玻璃不合格的可能性將變成是製造製程無法接受的。最小化由於表面水的蒸汽化而不合格的風險可以藉由在結合之前將水最少化來完成。 The vaporization of the condensate should produce a pressure differential of 104 to 106 Torr. This pressure differential will cause the thin glass to bend and detach from the carrier. This deflection increases the volume between the carrier and the sheet, reducing the pressure differential. The applied pressure and the resulting thin glass deflection cause the thin glass to be under tension. If the tension is too large, the possibility of a thin glass failing will become unacceptable in the manufacturing process. Minimizing the risk of failure due to vaporization of surface water can be accomplished by minimizing water prior to bonding.

在結合之前、清洗之後立即藉由加熱將載體與薄玻璃部分中的氣去除對結合的薄玻璃載體之真空相容性的影響係說明於表2與表3。 The effect of removal of gas in the carrier and the thin glass portion by heating prior to bonding, immediately after cleaning, on the vacuum compatibility of the bonded thin glass carrier is illustrated in Tables 2 and 3.

表2 Table 2

這些樣品包括塗覆AZO的載體,該載體係以含有NH4OH或JT Baker 100任一者的SC1溶液清洗。如上所述,氧化鋅與含有NH4OH與H2O2的SC1溶液反應而形成Zn(OH)2。藉由抽出現有CVD工具之承載室中的氣體來評估結合載體之真空相容性。此系統使用軟泵閥來放慢初始的真空激增,並且乾燥泵達到<70毫托的最終壓力。清洗與結合 之間沒有了除氣,全部的部分皆失效且薄玻璃在接近大氣壓力下破裂。表2顯示以150℃的加熱板除氣1分鐘的影響使在Baker 100中清洗的AZO樣品之失效點移到1托附近,而以NH4OH清洗的樣品繼續在大氣壓力附近失效。從以上陳述的二氧化矽表面之水合作用研究,可預期大多數的氫鍵結水可藉由150℃的加熱板除氣1分鐘來去除。然而,Zn(OH)2與Zn(CO)3的分解可能是不完全的。樣品2-1到2-7的比較顯示150℃的加熱板除氣1分鐘是有幫助的,但單獨進行則是不足夠的。再者,將以JTB 100清洗的樣品2-1、2-2、2-3及2-4與以NH4OH清洗的樣品2-5、2-6及2-7比較,顯示這兩種清洗溶液之間有極少的不同。表3顯示450℃真空退火1小時對載體的真空倖存度之影響。所有在結合區域沒有瑕疵(測試前可見的)的結合載體皆通過真空測試,不管清洗中使用何種化學物品。比較表3的樣品與表2的樣品顯示較高的溫度及較長的加熱時間對於改良薄片與載體安然度過真空條件的能力更加有效。當結合使用時,發現這兩個加熱步驟是非常有效的。具體而言,藉由以450℃真空退火1小時來去除塗覆圖案化AZO的載體之氣體(例如依據表3樣品之協定)以及藉由在150℃的加熱板上加熱1分鐘來去除薄玻璃(將與載體結合者)之氣體(例如依據表2樣品之協定),製造的32個樣品中有32個樣品通過真空測試。雖然玻璃薄片可能已經接受表3樣品之協定,但是表2協定之較低溫度與較短時間在某些情況下可能更為經濟。 These samples included an AZO coated carrier which was washed with an SC1 solution containing either NH 4 OH or JT Baker 100. As described above, zinc oxide is reacted with an SC1 solution containing NH 4 OH and H 2 O 2 to form Zn(OH) 2 . The vacuum compatibility of the bonded carrier was evaluated by pumping out the gas in the carrier chamber where the CVD tool was present. This system uses a soft pump valve to slow down the initial vacuum surge and the dry pump reaches a final pressure of <70 mTorr. There is no degassing between cleaning and bonding, all parts fail and the thin glass breaks under near atmospheric pressure. Table 2 shows that the effect of degassing for 1 minute on a hot plate at 150 °C shifted the failure point of the AZO sample washed in Baker 100 to around 1 Torr, while the sample washed with NH 4 OH continued to fail near atmospheric pressure. From the hydration studies of the ceria surface stated above, it is expected that most of the hydrogen-bonded water can be removed by degassing for 1 minute on a hot plate at 150 °C. However, the decomposition of Zn(OH) 2 and Zn(CO) 3 may be incomplete. A comparison of Samples 2-1 through 2-7 shows that it is helpful to degas the heated plate at 150 ° C for 1 minute, but it is not sufficient to perform it alone. Further, samples 2-1, 2-2, 2-3, and 2-4 washed with JTB 100 were compared with samples 2-5, 2-6, and 2-7 washed with NH 4 OH, and the two were displayed. There are very few differences between cleaning solutions. Table 3 shows the effect of vacuum annealing at 450 ° C for 1 hour on the vacuum survival of the support. All binding carriers in the binding zone without hydrazine (visible prior to testing) were tested by vacuum, regardless of the chemical used in the cleaning. Comparing the samples of Table 3 with the samples of Table 2 showed that higher temperatures and longer heating times were more effective in improving the ability of the flakes and the carrier to safely pass vacuum conditions. When used in combination, these two heating steps were found to be very effective. Specifically, the gas of the carrier coated with the patterned AZO is removed by vacuum annealing at 450 ° C for 1 hour (for example, according to the agreement of the sample of Table 3) and the thin glass is removed by heating on a hot plate at 150 ° C for 1 minute. The gas (to be combined with the carrier) (for example, according to the agreement of the sample of Table 2), 32 of the 32 samples produced passed the vacuum test. Although glass flakes may have accepted the agreement for the sample in Table 3, the lower temperatures and shorter times agreed in Table 2 may be more economical in some cases.

在任何加熱步驟之後,接著使薄片與載體互相接 觸。這樣做的一個方式是使薄片浮在載體的頂部上,然後造成薄片與載體之間有點接觸。結合(例如凡得瓦類型的結合)係發生於接觸的點並且延伸遍及薄片與載體之間的界面。在薄片與載體之間避免氣泡(在初始結合環境中的空氣或其他氣體)陷入是有利的,因為這種陷入的氣體可能會在後續裝置處理的過程中膨脹(由於處理溫度或真空環境),並且在某些例子中,會造成薄片從載體釋放或薄片破裂。再者,至於上述的揮發物,即使薄片沒有分離或破裂,但這種陷入的氣體可能會造成薄片凸起,而使得薄片不適合在例如需要某種片平坦度的設備或方法中進行處理。 After any heating step, the sheet is then interconnected with the carrier touch. One way of doing this is to float the sheet on top of the carrier and then cause a slight contact between the sheet and the carrier. Binding (e.g., a combination of van der Waals type) occurs at the point of contact and extends throughout the interface between the sheet and the carrier. It is advantageous to avoid trapping of air bubbles (air or other gases in the initial bonding environment) between the sheet and the carrier, as such trapped gas may expand during subsequent processing of the device (due to processing temperatures or vacuum conditions), And in some instances, the sheet is released from the carrier or the sheet is broken. Further, as for the volatile matter described above, even if the sheet is not separated or broken, the trapped gas may cause the sheet to be convex, making the sheet unsuitable for processing in, for example, an apparatus or method requiring some kind of sheet flatness.

避免氣泡的一種方式是在製造接觸點時彎曲薄片及/或載體,然後讓彎曲鬆弛直到薄片與載體變直。假使氣泡陷入薄片與載體之間,則藉由對氣泡施加方向性壓力直到氣泡跑出(例如從製品的邊緣或經由排氣通道)而移除氣泡是有利的。在此階段,在完成初始結合之後,則可以處理該製品而不需擔心陷入薄片與載體之間的顆粒。因此,舉例來說,之後可以在潔淨室外面處理該製品,以方便加工。 One way to avoid air bubbles is to bend the sheet and/or carrier while making the contact points and then relax the bend until the sheet and carrier are straightened. If the bubble is trapped between the sheet and the carrier, it is advantageous to remove the bubble by applying directional pressure to the bubble until the bubble escaping (e.g., from the edge of the article or via the venting channel). At this stage, after the initial bonding is completed, the article can be processed without fear of entanglement of particles between the sheet and the carrier. Thus, for example, the article can then be treated outside the clean room to facilitate processing.

另一種避免氣泡的方式是在真空環境中進行初始結合,以助於從薄片與載體之間去除氣體。然而,理想的是在將被結合的表面上具有水的薄膜,即使只是單層。這兩種從非結合區域去除氣體、揮發物及水蒸汽以限制陷入的氣體但在結合區域卻仍有水的競爭利益可以藉由使水蒸汽流過真空環境來提供。可以選擇適當的溫度、相對濕度及流動速率來提供這些競爭利益。 Another way to avoid air bubbles is to perform initial bonding in a vacuum environment to aid in the removal of gas from the sheet and carrier. However, it is desirable to have a film of water on the surface to be bonded, even if it is a single layer. These two competing benefits of removing gases, volatiles, and water vapor from the unbonded zone to limit trapped gases but still having water in the bonded zone can be provided by flowing water vapor through the vacuum environment. These competitive benefits can be provided by choosing the appropriate temperature, relative humidity, and flow rate.

假使在薄片與載體的初始結合之前沒有從上面具有釋放層的片去除足量的揮發物,則在初始結合之後可以進一步進行除氣。在此時間點,可以在足以引發進一步汽化的溫度下加熱該製品。然而,假使結合區域在非結合區域周圍形成完全的密封(此係防止裝置製程流體進入薄片與載體之間所需的,否則裝置製程流體可能會污染下游的製程,即該密封是密閉的),則除去揮發物氣體將會造成薄片凸起。可以藉由施加足夠的方向性壓力來迫使陷入的氣體從薄片與載體之間逸出而消除此凸起,例如在邊緣,或如下所述經由排氣通道。如下所述可以提供其他的排氣位置。若需要的話,在此階段可以使製品冷卻到室溫。 If a sufficient amount of volatiles is not removed from the sheet having the release layer thereon prior to the initial bonding of the sheet to the carrier, degassing may be further performed after the initial bonding. At this point in time, the article can be heated at a temperature sufficient to initiate further vaporization. However, if the bond area forms a complete seal around the unbonded area (this is required to prevent device process fluid from entering between the sheet and the carrier, the process process fluid may contaminate the downstream process, ie the seal is sealed), Removal of volatile gases will cause the lamella to bulge. The protrusion can be eliminated by applying sufficient directional pressure to force the trapped gas to escape from between the sheet and the carrier, such as at the edge, or via the exhaust passage as described below. Other exhaust locations can be provided as described below. If desired, the article can be allowed to cool to room temperature at this stage.

初始結合-實例1Initial combination - example 1

取出來自清洗實例-2的載體並且放在250℃的加熱板上持續5分鐘,然後使該載體回到室溫。使來自清洗實例-1的薄片浮在該載體的頂部上。迫使薄片與載體在薄片邊緣內部且在結合區域內的位置進行點接觸。薄片與載體之間形成了結合,而且觀察到該結合延伸遍及結合區域。然後將該製品放在溫度介於350℃到400℃之間的加熱板上加熱。觀察到在非結合區域中的凸起,而且該凸起後續被從薄片與載體之間擠壓出。 The carrier from Wash Example-2 was taken out and placed on a hot plate at 250 ° C for 5 minutes, and then the carrier was returned to room temperature. The sheet from Cleaning Example-1 was floated on top of the carrier. The sheet is forced into point contact with the carrier at a location inside the edge of the sheet and within the bonded area. A bond is formed between the sheet and the carrier, and it is observed that the bond extends throughout the bond area. The article is then heated on a hot plate at a temperature between 350 ° C and 400 ° C. A projection in the unbonded area is observed and the projection is subsequently extruded from between the sheet and the carrier.

排氣非結合區域Exhaust non-bonding zone

當陷入非結合區域50中的氣體膨脹時(例如當製品2處於增溫環境時,例如在結合強化期間),可以採取步驟來減少薄片20的凸起量及/或其他對薄片20不良的影響。減少 這些不良影響的一種方式是提供從非結合區域50延伸穿過結合區域40到達薄片20邊緣的排氣條70,參見第7圖,可以以與非結合區域相同或不同的方式形成排氣條70。有利的是,將排氣條70形成為與非結合區域50材料相同的釋放層。排氣條70的數量與位置將取決於非結合區域的大小與形狀。在任何加熱製品2的製程過程中(例如在結合強化製程過程中)或當製品2處在真空環境中時,排氣條70允許陷入薄片20與載體10之間的氣體逸出。排氣條70具有寬度71,並且在薄片20與載體10之間、比寬度71大的寬度73上產生非結合效應。可以使用任何適當數量的排氣條70,取決於非結合區域50的大小與厚度。 When the gas trapped in the unbonded region 50 expands (e.g., when the article 2 is in a warming environment, such as during bonding strengthening), steps can be taken to reduce the amount of protrusion of the sheet 20 and/or other adverse effects on the sheet 20. . cut back One way of these undesirable effects is to provide an exhaust strip 70 that extends from the unbonded region 50 through the bond region 40 to the edge of the sheet 20. Referring to Figure 7, the exhaust strip 70 can be formed in the same or different manner as the unbonded region. . Advantageously, the vent strip 70 is formed as the same release layer material as the unbonded region 50. The number and location of the vent strips 70 will depend on the size and shape of the unbonded regions. The vent strip 70 allows gas escaping between the sheet 20 and the carrier 10 during any process of heating the article 2 (e.g., during a bonding intensification process) or when the article 2 is in a vacuum environment. The vent strip 70 has a width 71 and creates a non-bonding effect between the lamella 20 and the carrier 10 over a width 73 that is greater than the width 71. Any suitable number of vent strips 70 can be used, depending on the size and thickness of the non-bonded regions 50.

當製品2處於真空環境中,也可以使用排氣條70來改良製品2在初始結合或裝置處理過程中的性能。舉例來說,初始結合可以在真空環境中進行,以減少陷入薄片20與載體10之間的氣體量,及/或促進初始結合製程。亦即,當初始結合製程在真空環境中進行時,排氣條70允許氣體在初始結合發生時從薄片20與載體10之間逸出。在初始結合製程結束時,雖然製品仍然處於真空環境中,但排氣孔被密封,使得氣體與濕氣不會再進入薄片20與載體10之間。或者,舉例來說,在薄片20已和載體10結合(藉由初始結合及/或結合強化任一者)之後,可以將製品2放在真空環境中,而且排氣條70在例如與薄片20的邊緣相交處密封。以此方式可以減少陷入薄片20和載體10之間的氣體量,從而最小化陷入的氣體在真空或升溫環境中、裝置處理期間的不良影響。然 後該密封可防止空氣與濕氣再度進入排氣條70。 When the article 2 is in a vacuum environment, the vent strip 70 can also be used to improve the performance of the article 2 during initial bonding or device processing. For example, the initial bonding can be performed in a vacuum environment to reduce the amount of gas trapped between the sheet 20 and the carrier 10, and/or to facilitate an initial bonding process. That is, when the initial bonding process is performed in a vacuum environment, the vent strip 70 allows gas to escape from between the sheet 20 and the carrier 10 as initial bonding occurs. At the end of the initial bonding process, although the article is still in a vacuum environment, the venting holes are sealed such that gas and moisture do not enter between the sheet 20 and the carrier 10. Alternatively, for example, after the sheet 20 has been bonded to the carrier 10 (by either initial bonding and/or bonding reinforcement), the article 2 can be placed in a vacuum environment, and the vent strip 70 is, for example, with the sheet 20 The edges of the edges are sealed. In this way, the amount of gas trapped between the sheet 20 and the carrier 10 can be reduced, thereby minimizing the adverse effects of trapped gases in a vacuum or elevated temperature environment, during device processing. Of course This seal prevents air and moisture from entering the vent strip 70 again.

密封排氣條70的一種方式是將製品2放在原子層沉積(ALD)腔室中、排空該腔室、然後對在薄片20邊緣的排氣條70末端各處沉積薄塗層。ALD涉及反應物的單層脈衝,該反應物可擴散及滲透進入狹窄的特徵中(諸如排氣條70的末端),並在與另一個前驅物的第二脈衝反應之前吸附。舉例來說,在Al2O3的ALD沉積中,單層的鋁前驅物(如三甲基鋁)與單層的水反應而形成Al2O3One way to seal the vent strip 70 is to place the article 2 in an atomic layer deposition (ALD) chamber, evacuate the chamber, and then deposit a thin coating over the ends of the vent strip 70 at the edge of the sheet 20. ALD involves a single layer pulse of reactants that can diffuse and penetrate into narrow features, such as the ends of the vent strip 70, and adsorb before reacting with the second pulse of another precursor. For example, in ALD deposition of Al 2 O 3 , a single layer of aluminum precursor (such as trimethyl aluminum) reacts with a single layer of water to form Al 2 O 3 .

排氣條-實例1Exhaust strip - example 1

將來自釋放層應用-實例1的載體另外用四個排氣孔(每個寬度100微米)圖案化。然後依據初始結合實例-1與提高結合強度實例-1處理載體。在結合強化之後,寬度73在寬度71的任一邊各延伸約0.5 mm。樣品安然度過在100毫托的初始真空測試。 The carrier from the release layer application - Example 1 was additionally patterned with four vents (100 microns each). The carrier was then treated according to the initial binding example-1 and the increased binding strength example-1. After bonding reinforcement, the width 73 extends about 0.5 mm on either side of the width 71. The sample safely passed the initial vacuum test at 100 mTorr.

排氣條-實例2Exhaust strip - example 2

將來自釋放層應用-實例1的載體另外用八個排氣孔(每個寬度100微米)圖案化。然後依據初始結合實例-1與提高結合強度實例-1處理載體。在結合強化之後,寬度73在寬度71的任一邊各延伸約0.5 mm。樣品安然度過在100毫托的初始真空測試。 The carrier from the release layer application - Example 1 was additionally patterned with eight vents (100 microns each). The carrier was then treated according to the initial binding example-1 and the increased binding strength example-1. After bonding reinforcement, the width 73 extends about 0.5 mm on either side of the width 71. The sample safely passed the initial vacuum test at 100 mTorr.

排氣條-實例3Exhaust strip - example 3

將來自釋放層應用-實例1的載體另外用四個排氣孔(每個寬度1 mm)圖案化。然後依據初始結合實例-1與提高結合強度實例-1處理載體。在結合強化之後,寬度73在寬度 71的任一邊各延伸約0.5 mm。樣品安然度過在100毫托的初始真空測試。 The carrier from the release layer application - Example 1 was additionally patterned with four vents (1 mm each). The carrier was then treated according to the initial binding example-1 and the increased binding strength example-1. After bonding reinforcement, the width 73 is in width Each side of 71 extends approximately 0.5 mm. The sample safely passed the initial vacuum test at 100 mTorr.

排氣條-實例4Exhaust strip - example 4

將來自釋放層應用-實例1的載體另外用四個排氣孔(每個寬度10 mm)圖案化。然後依據初始結合實例-1與提高結合強度實例-1處理載體。在結合強化之後,寬度73在寬度71的任一邊各延伸約0.5 mm。樣品安然度過在100毫托的初始真空測試。 The carrier from the release layer application - Example 1 was additionally patterned with four vents (each width 10 mm). The carrier was then treated according to the initial binding example-1 and the increased binding strength example-1. After bonding reinforcement, the width 73 extends about 0.5 mm on either side of the width 71. The sample safely passed the initial vacuum test at 100 mTorr.

排氣條-實例5Exhaust strip - example 5

將來自釋放層應用-實例1的載體另外用四個排氣孔(每個寬度25 mm)圖案化。然後依據初始結合實例-1與提高結合強度實例-1處理載體。在結合強化之後,寬度73在寬度71的任一邊各延伸約0.5 mm。樣品安然度過在100毫托的初始真空測試。 The carrier from the release layer application - Example 1 was additionally patterned with four vents (25 mm each). The carrier was then treated according to the initial binding example-1 and the increased binding strength example-1. After bonding reinforcement, the width 73 extends about 0.5 mm on either side of the width 71. The sample safely passed the initial vacuum test at 100 mTorr.

作為排氣條70的替代方案,或除了排氣條70之外,可將溝槽製作於載體10本身中。亦即,取代通過結合區域到製品2的邊緣(或適合地化到薄片20的邊緣)形成非結合區域條,載體10中的凹進路徑(或溝槽)也可以發揮相同的功能。或者,取代載體10中的溝槽,可以在薄片20中形成溝槽,或是在薄片20及載體10兩者中皆形成溝槽。溝槽的位置可以與第7圖中圖示的排氣條70位置類似。在任何情況中,溝槽允許真空環境在初始結合、結合強化過程中及/或在裝置處理之前的任何時間點去除薄片20與載體10之間的氣體及/或濕氣。雖然仍在真空環境中,但也可以使用聚合物注 入與固化來密封溝槽,該聚合物例如聚醯亞胺、熱可固化聚合物或紫外線可固化聚合物。或者,可以藉由加熱放入溝槽的熔塊、或藉由直接加熱溝槽附近的材料來熔化及/或融合封閉的溝槽而將溝槽密封,例如可以藉由雷射加熱來完成。這樣的溝槽可以被配置於與排氣條70相同的結構和數量中。然而,因為可以將溝槽製成具有比排氣條70更大的橫截面,故可以使用較少的溝槽。此外,為了使用較少的溝槽,溝槽可以延伸進入非結合區域50,而且在一些實施例中,溝槽甚至可以延伸到非結合區域50的中心。溝槽及/或真空條的數量可以取決於非結合區域50的大小。 As an alternative to, or in addition to, the vent strip 70, the grooves may be made in the carrier 10 itself. That is, instead of forming a strip of non-bonded regions by bonding the regions to the edges of the article 2 (or suitably to the edges of the sheet 20), the recessed paths (or grooves) in the carrier 10 can also perform the same function. Alternatively, instead of the grooves in the carrier 10, grooves may be formed in the sheet 20 or grooves may be formed in both the sheet 20 and the carrier 10. The position of the groove may be similar to the position of the vent strip 70 illustrated in FIG. In any event, the grooves allow the vacuum environment to remove gas and/or moisture between the sheet 20 and the carrier 10 at any point in the initial bonding, bonding strengthening process, and/or prior to device processing. Although still in a vacuum environment, polymer injection can also be used Incorporating and curing to seal the trench, such as a polyimide, a heat curable polymer or an ultraviolet curable polymer. Alternatively, the trench can be sealed by heating the frit placed in the trench, or by directly heating the material in the vicinity of the trench to melt and/or fuse the closed trench, for example by laser heating. Such a groove can be disposed in the same structure and number as the exhaust strip 70. However, because the grooves can be made to have a larger cross section than the vent strip 70, fewer grooves can be used. Moreover, in order to use fewer trenches, the trenches may extend into the non-bonded regions 50, and in some embodiments, the trenches may even extend to the center of the unbonded regions 50. The number of grooves and/or vacuum strips may depend on the size of the non-bonded regions 50.

在所需區域強化薄片與載體之間的結合-110Strengthening the bond between the sheet and the carrier in the desired area - 110

載體與薄片之間在108形成的結合可以藉由各種製程來強化,使得製品2可以承受裝置處理的嚴苛條件(例如高溫(例如高於350℃、400℃、450℃、500℃、550℃或600℃的溫度)真空環境及/或高壓流體噴霧),而且薄片不會脫離載體。 The bond formed between the carrier and the sheet at 108 can be enhanced by various processes such that the article 2 can withstand the harsh conditions of device processing (eg, high temperatures (eg, above 350 ° C, 400 ° C, 450 ° C, 500 ° C, 550 ° C). Or a temperature of 600 ° C) vacuum environment and / or high pressure fluid spray), and the sheet does not leave the carrier.

強化薄片與載體之間的結合的一種方式係進行陽極結合。陽極結合的一種方式係描述於US 2012/0001293中,該專利公開案討論也可以使用阻障層沉積及使用用於將阻障層黏附於基板的陽極結合來將玻璃薄片結合於載體基板上。 One way to strengthen the bond between the sheet and the carrier is to perform anodic bonding. One way of anodic bonding is described in US 2012/0001293, which is also discussed by the use of barrier layer deposition and the use of an anodic bond for adhering a barrier layer to a substrate to bond the glass sheet to the carrier substrate.

強化薄片與載體之間的結合的另一種方式係透過溫度與壓力的使用,其中加熱製品(包括薄片與載體)並使製品接受壓力施加。壓力施加可以藉由以薄板接觸載體及薄片來進行,或例如在壓力室中施加流體壓力到製品。薄板本身 可以作為熱源,或者薄板可以位在加熱環境內。使用的壓力量可視溫度而變,例如隨著溫度升高可能需要較少的壓力。 Another way to strengthen the bond between the sheet and the carrier is through the use of temperature and pressure, wherein the article (including the sheet and carrier) is heated and the article is subjected to pressure application. Pressure application can be performed by contacting the carrier and the sheet with a thin sheet or applying fluid pressure to the article, for example, in a pressure chamber. Sheet itself Can be used as a heat source, or the sheet can be placed in a heated environment. The amount of pressure used can vary depending on the temperature, for example less pressure may be required as the temperature increases.

當使用壓力板時,可以在薄片與向薄片施加壓力的薄板之間使用間隔板或填充片。間隔板被塑型,以便在結合區域中接觸薄片,並接觸盡可能多的結合區域。使用間隔板的一個優點在於間隔板可以在結合強化期間、施加熱與壓力的過程中允許薄片凸起的量等於間隔板的厚度。該凸起可以是在裝置處理過程中可接受的、但在結合強化過程中仍可能對薄片造成麻煩或損害的量。假使在非結合區域中的薄片與載體之間仍有有限的揮發物及/或氣泡量,則可能出現這樣的凸起。或者,壓力施加板可以被塑型以便具有凹處或凹面或是以其他方式,使得壓力施加板不直接與非結合區域中的薄片接觸。以此方式,可允許薄片在結合強化過程中具有可接受的凸起。假使薄片不被允許有凸起,則在某些環境中(例如具有足量的剩餘揮發物及/或空氣囊時)累積在非結合區域的壓力可能會干擾結合區域中進行的結合強化。 When a pressure plate is used, a spacer or a filler sheet can be used between the sheet and the sheet to which pressure is applied to the sheet. The spacer is shaped to contact the sheet in the bond area and to contact as many bond areas as possible. One advantage of using a spacer is that the spacer can allow the amount of lamellae to be equal to the thickness of the spacer during application of heat and pressure during bonding reinforcement. The projections may be of an amount that is acceptable during processing of the device but may still cause trouble or damage to the sheet during bonding strengthening. Such protrusions may occur if there is still a limited amount of volatiles and/or bubbles between the sheets in the unbonded area and the carrier. Alternatively, the pressure application plate may be shaped to have a recess or concave or otherwise such that the pressure application plate does not directly contact the sheet in the unbonded region. In this way, the sheet can be allowed to have acceptable protrusions during the bonding strengthening process. If the sheet is not allowed to have protrusions, the pressure accumulated in the unbonded area in certain circumstances (e.g., with a sufficient amount of residual volatiles and/or air pockets) may interfere with the bonding enhancement in the bonded area.

至於加熱製品以提高結合強度,在溫度約400℃至約625℃的加熱已經產生可接受的結合強度。一般來說,當溫度提高結合強度即提高。實作的溫度上限係由涉及的材料(即載體的材料及/或薄片的材料)之應變點所界定。至於對製品施加壓力以提高結合強度,與溫度類似,當壓力增加時結合強度也跟著提高。作為實作的問題,從製造能力的觀點來看,理想的是能夠在盡可能低的壓力與溫度下產生可接受的結合強度。 As for heating the article to increase the bond strength, heating at a temperature of from about 400 ° C to about 625 ° C has produced acceptable bond strength. In general, when the temperature is increased, the bonding strength is increased. The upper temperature limit imposed is defined by the strain point of the material involved (ie, the material of the carrier and/or the material of the sheet). As for applying pressure to the article to increase the bonding strength, similar to the temperature, the bonding strength is also increased as the pressure is increased. As a matter of practicality, from the viewpoint of manufacturing ability, it is desirable to be able to produce an acceptable bonding strength at a pressure and temperature as low as possible.

當以雷射加熱初始結合區域時,在具有大氣壓力的環境中,當釋放層夠薄時即有可能在薄片與載體之間實現可接受的玻璃對玻璃結合。 When the initial bonding zone is heated by laser, in an environment with atmospheric pressure, it is possible to achieve an acceptable glass-to-glass bond between the foil and the carrier when the release layer is thin enough.

可以使用例如美國紐約州康寧地區的康寧公司(R Sabia,Corning Incorporated,Corning,NY)之美國專利6,814,833 B2、標題「含矽製品之直接結合(Direct Bonding of Articles Containing Silicon)」中討論的玻璃對玻璃結合技術,依據本揭示之觀念將玻璃薄片與載體結合。 For example, the glass pairs discussed in the heading "Direct Bonding of Articles Containing Silicon" can be used, for example, in U.S. Patent No. 6,814,833 B2 to R Sabia, Corning Incorporated, Corning, NY. Glass bonding techniques combine glass flakes with a carrier in accordance with the teachings of the present disclosure.

提高結合強度實例-1Improve bonding strength example-1

在室溫下取出從初始結合實例-1得到的製品,並且將該製品放在熱壓板之間,使用石墨烯片(已經圖案化,使得石墨烯材料與結合區域的圖案相配,而在片中的切出部分與非結合區域的圖案相配)作為薄片與熱壓板之間的填充片。使該等薄板一起接觸製品,但不施加任何明顯的壓力。在溫度300℃加熱該等薄板且不對製品施加明顯的壓力。該等薄板是從室溫上升到300℃,並且維持5分鐘。然後在相同時間以40℃/分鐘的速率將該等薄板從300℃升溫到625℃,將製品上的壓力提高到20 psi。此狀態維持5分鐘,然後關掉加熱器並釋放壓力。讓該等薄板冷卻到250℃,在250℃將製品從加壓機取出並冷卻至室溫。經檢查,發現製品在結合區域具有薄片與載體的行為如同單一塊體這樣的結合,而薄片與載體在非結合區域則是極為分離的個體。 The article obtained from the initial bonding example-1 was taken out at room temperature, and the article was placed between the hot platens, using graphene sheets (already patterned so that the graphene material matches the pattern of the bonding region, and in the sheet The cut-out portion in the pattern matches the pattern of the non-bonded region) as a filled sheet between the sheet and the hot platen. The sheets are brought into contact with the article together without any significant pressure being applied. The sheets were heated at a temperature of 300 ° C without applying significant pressure to the article. The sheets were raised from room temperature to 300 ° C and held for 5 minutes. The sheets were then heated from 300 ° C to 625 ° C at the same time at a rate of 40 ° C/min to increase the pressure on the article to 20 psi. This state is maintained for 5 minutes, then the heater is turned off and the pressure is released. The sheets were allowed to cool to 250 ° C and the articles were removed from the press at 250 ° C and cooled to room temperature. Upon examination, it was found that the article had a combination of the sheet and the carrier in the bonded region as a single block, and the sheet and the carrier were extremely separated individuals in the unbound region.

提高結合強度實例-2(比較例)Improve bonding strength example-2 (comparative example)

進行在提高結合強度實例1中描述的製程,不同之 處僅在於最高溫度為180℃及使用的壓力為100 psi。對於高溫、低壓的裝置處理條件,這些條件無法產生可接受的結合強度。 Carrying out the process described in Example 1 of improving the bonding strength, which is different It is only at a maximum temperature of 180 ° C and a pressure of 100 psi. These conditions do not produce acceptable bond strength for high temperature, low pressure plant processing conditions.

從載體取出所要的薄片部分-116Remove the desired portion of the sheet from the carrier - 116

可撓式玻璃在載體上的概念之主要挑戰之一係從載體取出所要的薄片部分之能力。參照第1圖、第2圖及第8-12圖,本節概述一種新穎的方法,該方法使用刻劃輪90來進行自由形狀刻劃,並從載體10移出所要的薄片20之部分56。該方法也描述一種使用雷射光束94(例如CO2雷射光束)進行薄片20之自由形狀全體切割的方法,與機械刻劃一起產生一系列的釋放孔61、63、65、67及/或69,以從載體10移出所要的薄片20之部分56。 One of the main challenges of the concept of flexible glass on a carrier is the ability to remove the desired portion of the sheet from the carrier. Referring to Figures 1, 2, and 8-12, this section outlines a novel method that uses the scoring wheel 90 to perform free-form scoring and remove the desired portion 56 of the sheet 20 from the carrier 10. The method also describes a method of performing a free-form overall cut of the sheet 20 using a laser beam 94 (e.g., a CO 2 laser beam) that, together with mechanical scribing, produces a series of release apertures 61, 63, 65, 67 and/or 69, to remove the portion 56 of the desired sheet 20 from the carrier 10.

此方法避免了從載體10脫離整個薄片20的需求;降低薄片20破損的可能性。相反地,可以藉由切割與僅取出所要部分56來實現效率,所要部分56可以是薄膜電晶體(TFT)、彩色濾光片(CF)、觸摸或其他薄膜中之任一者。此外,由於機械切割與雷射切割不會切割超出薄片20的厚度22,故載體得以再利用(在從載體清洗掉不要的薄片部分之後),並降低整體的製造成本。 This method avoids the need to detach the entire sheet 20 from the carrier 10; reducing the likelihood of breakage of the sheet 20. Conversely, efficiency can be achieved by cutting and removing only the desired portion 56, which can be any of a thin film transistor (TFT), a color filter (CF), a touch, or other film. Moreover, since mechanical cutting and laser cutting do not cut beyond the thickness 22 of the sheet 20, the carrier can be reused (after cleaning away unnecessary sheet portions from the carrier) and reducing overall manufacturing costs.

接著,參照第1圖及第2圖,將描述如何從載體10移出所要的薄片20之部分56,部分56即上面形成有裝置或其他所需結構的部分。 Next, referring to Figures 1 and 2, how to remove the portion 56 of the desired sheet 20 from the carrier 10, that is, the portion on which the device or other desired structure is formed, will be described.

為了從載體10移出所要部分56,在薄片20製作數個切割。該等切割可以是刻劃線或排氣線,例如當以機械裝 置(例如刻劃輪90)製作時。或者,可以使用雷射94(例如二氧化碳雷射)來產生穿過整個厚度22的排氣孔或全體切割。排氣孔具有深度62。為了容易地且可靠地移出所要部分56,故選擇深度62為厚度22的50%。假使排氣孔深度62少於厚度22的50%,則由於薄片20與載體10互相結合,故薄片20與載體10將無法收縮到足以使排氣孔延伸穿過整個厚度22而形成將釋放所要部分56的切割。在全體雷射切割中,排氣孔深度62將是厚度22的100%。為了簡化解釋及說明之故,以下將把排氣孔描述為穿過小於整個厚度22所製成的排氣孔。再者,雖然圖示的所有排氣孔具有相同的深度62,但這並非必須的;相反地;該等排氣孔可以具有彼此不同的深度。 In order to remove the desired portion 56 from the carrier 10, several cuts are made in the sheet 20. The cuts may be score lines or vent lines, such as when fabricated by mechanical means such as scoring wheel 90. Alternatively, a laser 94 (eg, a carbon dioxide laser) can be used to create a vent or overall cut through the entire thickness 22. The vent has a depth 62. In order to easily and reliably remove the desired portion 56, the depth 62 is selected as 50% of thickness 22. If the vent depth 62 is less than 50% of the thickness 22, since the lamella 20 and the carrier 10 are bonded to each other, the lamella 20 and the carrier 10 will not be able to shrink enough to allow the vent to extend through the entire thickness 22 to form a release. The cutting of portion 56. In overall laser cutting, the vent depth 62 will be 100% of the thickness 22. For simplicity of explanation and explanation, the venting holes will be described below as venting holes made through less than the entire thickness 22. Furthermore, although all of the venting holes illustrated have the same depth 62, this is not required; rather, the venting holes may have different depths from each other.

排氣孔包括周邊排氣孔60,y方向釋放排氣孔61、63,及x方向釋放排氣孔65、67、69。周邊排氣孔60沿著所要部分56的周邊57,而且形成於非結合區域50的周邊52內。將釋放排氣孔圖示為具有各種相對於結合區域40與非結合區域50以及相對於周邊排氣孔60的結構,這可能是一種情況,或者釋放排氣孔可以具有相似的結構。舉例來說,將y方向排氣孔61圖示為在結合區域40與非結合區域50兩者內延伸,即y方向排氣孔61與周邊52相交,但是沒有延伸到薄片20的周邊。排氣孔61與薄片20的周邊間隔一段距離66。可以選擇距離66為任何適當的值,包括零。在距離66為零的情況中,則該等排氣孔將具有排氣孔63的結構。與排氣孔61類似,x方向排氣孔65在結合區域40與非結合區域 50兩者內延伸,並且與薄片20的周邊隔開。排氣孔67完全在非結合區域50內,並且沒有到達周邊52。同樣地,排氣孔69完全在非結合區域50內,並且沒有延伸到周邊52。在一種配置中,如排氣孔65所圖示,定位排氣孔以便與周邊排氣孔60的直線部分共直線。在另一種配置中,如排氣孔63、67、69所圖示,排氣孔係垂直於周邊排氣孔60的直線部分。在另一種配置中,如排氣孔61所圖示,排氣孔可以對準周邊排氣孔60的彎曲部分。 The vent hole includes a peripheral vent hole 60, the y direction releases the vent holes 61, 63, and the x direction releases the vent holes 65, 67, 69. The peripheral venting opening 60 is along the perimeter 57 of the desired portion 56 and is formed within the perimeter 52 of the unbonded region 50. The release vent is illustrated as having various configurations relative to the combined region 40 and the unbonded region 50 and relative to the peripheral vent 60, which may be a situation, or the release vent may have a similar structure. For example, the y-direction vent 61 is illustrated as extending within both the bond region 40 and the non-bond region 50, ie, the y-direction vent 61 intersects the perimeter 52, but does not extend to the perimeter of the sheet 20. The venting opening 61 is spaced from the periphery of the sheet 20 by a distance 66. The distance 66 can be chosen to be any suitable value, including zero. In the case where the distance 66 is zero, then the vent holes will have the structure of the venting holes 63. Similar to the vent hole 61, the x-direction vent hole 65 is in the bonded region 40 and the non-bonded region 50 extends within both and is spaced from the periphery of the sheet 20. The venting opening 67 is completely within the unbonded region 50 and does not reach the perimeter 52. Likewise, the venting opening 69 is completely within the non-bonding region 50 and does not extend to the perimeter 52. In one configuration, as illustrated by the venting opening 65, the venting opening is positioned to be co-linear with the straight portion of the peripheral venting opening 60. In another configuration, as illustrated by venting openings 63, 67, 69, the venting opening is perpendicular to the straight portion of peripheral venting opening 60. In another configuration, as illustrated by venting opening 61, the venting opening can be aligned with the curved portion of peripheral venting opening 60.

對於所有的排氣孔61、63、65、67、69來說,共同的是該等排氣孔皆未延伸到接觸周邊排氣孔60。理想的是保持所要部分56的周邊57盡可能地高品質。亦即,部分56的強度將至少部分取決於周邊57的邊緣強度。因此,需要避免損傷周邊57。當製作排氣孔61、63、65、67、69時,刻劃輪或過度射擊目標的雷射可能會對周邊57造成損傷,從而弱化所要部分56。另一方面,朝向周邊57延伸穿過薄片20的排氣孔將在周邊排氣孔60停止,而不會對周邊57造成損傷。而且,配置排氣孔以便來到周邊排氣孔60的距離64之內。選擇距離64為500微米,例如400微米、300微米、200微米、100微米、50微米、25微米、10微米、或5微米。假使距離64大於500微米,則會有排氣孔延伸時不在期望位置碰到周邊排氣孔60的不受歡迎可能性。 Common to all of the venting holes 61, 63, 65, 67, 69 is that none of the venting holes extend to contact the peripheral venting opening 60. It is desirable to maintain the perimeter 57 of the desired portion 56 as high quality as possible. That is, the strength of portion 56 will depend, at least in part, on the edge strength of perimeter 57. Therefore, it is necessary to avoid damage to the periphery 57. When the venting holes 61, 63, 65, 67, 69 are made, the laser of the scoring wheel or the over-shot target may cause damage to the periphery 57, thereby weakening the desired portion 56. On the other hand, the venting opening extending through the sheet 20 toward the periphery 57 will stop at the peripheral venting opening 60 without causing damage to the periphery 57. Moreover, the venting holes are configured to come within the distance 64 of the peripheral venting holes 60. Choose a distance of 64 500 microns, for example 400 microns, 300 microns, 200 microns, 100 micron, 50 microns, 25 microns, 10 microns, or 5 microns. If the distance 64 is greater than 500 microns, there is an undesired likelihood that the venting opening will not be encountered at the desired location when the vent extends.

可以使用任何適當數量的排氣孔61、63、65、67、69。亦即,可以使用任何適當的排氣孔總數,或每種排氣孔類型的任何適當數量。然而,本發明人已經發現到,使用彼 此呈一定角度配置的排氣孔可便於移出所要部分56。亦即,相對於只使用x方向類型或只使用y方向類型的排氣孔,x方向與y方向排氣孔兩者一起使用是較有利的。 Any suitable number of venting holes 61, 63, 65, 67, 69 can be used. That is, any suitable number of vents, or any suitable number of vent types, can be used. However, the inventors have discovered that using This venting opening at an angle facilitates removal of the desired portion 56. That is, it is advantageous to use both the x-direction and the y-direction vent hole together with respect to the exhaust hole using only the x-direction type or only the y-direction type.

在形成全部的排氣孔60、61、63、65、67、69之後,載體10與薄片20會收縮而使排氣孔60、61、63、65、67、69延伸穿過厚度22,而且排氣孔61、63、65、67、69在各自的x或y方向,以便碰到周邊排氣孔60。接著,如第12圖所圖示,可以藉由剝落來移出所要部分56,例如藉由附接吸盤91並將所要部分56拉離載體10。為了便於移出,在拉動所要部分56時可以迫使空氣或液體流過所要部分56與載體10之間。因為所要部分56的周邊57整個都在非結合區域50內,故可以輕易地從載體10移出薄片20,且不會損傷薄片20。 After forming all of the venting holes 60, 61, 63, 65, 67, 69, the carrier 10 and the sheet 20 will contract to extend the venting holes 60, 61, 63, 65, 67, 69 through the thickness 22, and The exhaust holes 61, 63, 65, 67, 69 are in respective x or y directions so as to hit the peripheral exhaust holes 60. Next, as illustrated in Fig. 12, the desired portion 56 can be removed by spalling, such as by attaching the suction cup 91 and pulling the desired portion 56 away from the carrier 10. To facilitate removal, air or liquid may be forced to flow between the desired portion 56 and the carrier 10 as the desired portion 56 is pulled. Since the periphery 57 of the desired portion 56 is entirely in the non-bonding region 50, the sheet 20 can be easily removed from the carrier 10 without damaging the sheet 20.

將結合第1、2、8及9圖說明取出所要部分56的第二實施例。在此實施例中,主要將描述與第一實施例的差別,而且瞭解到,其餘的元件與關於第一實施例所描述的類似,其中貫穿整個實施例相同的參照符號表示相同的元件。 A second embodiment of taking out the desired portion 56 will be described in conjunction with Figures 1, 2, 8, and 9. In this embodiment, the differences from the first embodiment will be mainly described, and the remaining elements are similar to those described with respect to the first embodiment, and the same reference numerals are used throughout the embodiments to denote the same elements.

在本實施例中,如同第一實施例形成周邊排氣孔60與所需排氣孔61、63、65、67、69。載體10與薄片20也收縮而使排氣孔60、61、63、65、67、69延伸。另外,如第9圖中所見,之後當以柔軟的彈性底板98支撐薄片20與載體10時,可以使用加壓機或斷裂桿92來對薄片20與載體10施加壓力。壓力係施加於周邊57(周邊排氣孔60)的右邊,而且通常沿著與通過排氣孔61與排氣孔63的線平行的線, 以便使排氣孔61與排氣孔63不只延伸通過薄片20,而且還通過載體10,如第9圖中延伸穿過載體10厚度的虛線所圖示。亦即,在薄片20與載體10之間的界面41的結合是如此的強大,以致於這些元件在結合區域40中的行為如同單一塊體。因此,因為排氣孔61、63在界面41上方的薄片20之表面上延伸,當排氣孔61、63延伸時,可以製作排氣孔61、63為除了穿過薄片20之外還延伸穿過載體10。排氣孔延伸穿過載體10不是很好控制,尤其是在結合區域40的外部,但也不需要將排氣孔延伸穿過載體10控制地很好。雖然在結合區域40外部的載體10上及/或周邊57(周邊排氣孔60)外部的薄片20上可能有鋸齒狀的邊緣,但主要的工作是移出一部分的薄片20,以便允許所要部分56滑離載體10,例如在第8圖中圖示的箭頭58之方向上。亦即,雖然當拉動薄片20以將薄片20提離載體時,任何存在的凡得瓦力可能是相對強大的,但就剪切力而言這些力是薄弱的。因此,與一部分的載體10一起移出一部分的薄片20藉以允許所要部分56滑離載體10可大大地促進所要部分56的移出。當然,可以使用加壓機或在x方向延伸的斷裂桿來使排氣孔65和69延伸穿過載體10,以允許所要部分56在y方向滑離載體10。 In the present embodiment, the peripheral venting holes 60 and the desired venting holes 61, 63, 65, 67, 69 are formed as in the first embodiment. The carrier 10 and the sheet 20 are also contracted to extend the vent holes 60, 61, 63, 65, 67, 69. Further, as seen in Fig. 9, when the sheet 20 and the carrier 10 are supported by the flexible elastic bottom plate 98, a press or a breaking rod 92 can be used to apply pressure to the sheet 20 and the carrier 10. The pressure system is applied to the right side of the periphery 57 (peripheral venting opening 60), and generally along a line parallel to the line passing through the venting opening 61 and the venting opening 63, In order to allow the venting opening 61 and the venting opening 63 to extend not only through the sheet 20 but also through the carrier 10, as indicated by the dashed lines extending through the thickness of the carrier 10 in FIG. That is, the bonding of the interface 41 between the sheet 20 and the carrier 10 is so strong that these elements behave like a single block in the bonding region 40. Therefore, since the vent holes 61, 63 extend over the surface of the sheet 20 above the interface 41, when the vent holes 61, 63 are extended, the vent holes 61, 63 can be made to extend beyond the sheet 20 Pass the carrier 10. The extension of the venting opening through the carrier 10 is not well controlled, especially outside of the bonding region 40, but it is also not necessary to extend the venting opening through the carrier 10 well. While there may be serrated edges on the sheet 10 on the exterior of the bond area 40 and/or on the outside of the perimeter 57 (peripheral vent 60), the primary task is to remove a portion of the sheet 20 to allow the desired portion 56. Sliding away from the carrier 10, for example in the direction of the arrow 58 illustrated in Figure 8. That is, although any of the existing van der Waals forces may be relatively strong when the sheet 20 is pulled to lift the sheet 20 away from the carrier, these forces are weak in terms of shear forces. Thus, removing a portion of the sheet 20 with a portion of the carrier 10 thereby allowing the desired portion 56 to slide away from the carrier 10 greatly facilitates removal of the desired portion 56. Of course, a press or a rupture rod extending in the x direction can be used to extend the venting holes 65 and 69 through the carrier 10 to allow the desired portion 56 to slide away from the carrier 10 in the y direction.

雖然將刻劃線圖示為製作於薄片20上,但不一定是這樣,因刻劃線可製作於結合區域40中。亦即,在結合區域40,薄片20與載體10的行為如同單一塊體,其中當製品彎曲時任一刻劃皆將延伸穿透到達另一者。因此,可將結合區域中的刻劃形成於製品的薄片側或載體側任一者上。 Although the scribe line is illustrated as being formed on the sheet 20, this is not necessarily the case, and the scribe line can be formed in the joint region 40. That is, at the bonding region 40, the sheet 20 and the carrier 10 behave as a single block, wherein any scribe will extend through to the other as the article is bent. Thus, the score in the bond area can be formed on either the sheet side or the carrier side of the article.

使用機械刻劃取出該等部分包括以下步驟: Using mechanical scribing to remove the parts includes the following steps:

1.沿著所需輪廓刻劃薄片,亦即使用刻劃輪90在非結合區域50內形成周邊排氣孔60。選擇刻劃輪的類型、刻劃壓力及刻劃速度,以產生深度62(D)的排氣孔,深度62等於或大於薄片厚度22(T)的一半,即(D0.5T)。可以在取出之前刻劃多個輪廓。刻劃的輪廓可以具有圓角或可以具有尖角。 1. The sheet is scored along the desired contour, i.e., the perimeter vent 60 is formed in the unbonded region 50 using the scoring wheel 90. The type of the scoring wheel, the scoring pressure and the scoring speed are selected to produce a venting opening having a depth 62 (D) equal to or greater than half the thickness of the sheet 22 (T), ie (D 0.5T). Multiple contours can be scored prior to removal. The scored outline may have rounded corners or may have sharp corners.

2.形成例如釋放切割或排氣孔61、63、65、67及/或69的圖案,而得以取出所要部分56。假使待取出的所要部分56具有長方形的形狀(或具有圓角的長方形),則應在垂直於該部分之每一側的方向上、於所要部分56之每個角落處形成釋放排氣孔(參見第1圖及第8圖)。假使所要部分56是「大的」,則可以在該等角落之間製作一或多個額外的釋放排氣孔67。應將釋放切割(排氣孔)延伸到接近沿著所要部分56之輪廓57的周邊排氣孔60(較佳是在小於0.5 mm內),但該等釋放切割(排氣孔)不應與該輪廓相交或「觸碰」,以避免損壞該部分的邊緣。 2. Forming a pattern such as a release cut or venting opening 61, 63, 65, 67 and/or 69 to remove the desired portion 56. If the desired portion 56 to be taken out has a rectangular shape (or a rectangular shape with rounded corners), a release vent hole should be formed at each corner of the desired portion 56 in a direction perpendicular to each side of the portion ( See Figures 1 and 8). If the desired portion 56 is "large", one or more additional release vents 67 can be made between the corners. The release cut (venting opening) should extend to a peripheral venting opening 60 (preferably within less than 0.5 mm) proximate the contour 57 of the desired portion 56, but such release cuts (venting holes) should not be The contours intersect or "touch" to avoid damaging the edges of the portion.

3.在刻劃該部分的輪廓(即形成周邊排氣孔60)之後及在形成釋放排氣孔(選自61、63、65、67、69圖示的這些中的一或多種類型)之後,可撓性玻璃應會在所要部分56的周邊57周圍與載體10一起稍微收縮(彎曲),以使該等排氣孔延伸穿過薄片20的厚度22,而實現所要部分56的完全分離。 3. After scribing the outline of the portion (ie, forming the peripheral venting opening 60) and after forming the release venting opening (one or more types selected from the group consisting of 61, 63, 65, 67, 69) The flexible glass should be slightly constricted (bent) with the carrier 10 around the periphery 57 of the desired portion 56 such that the vents extend through the thickness 22 of the sheet 20 to achieve complete separation of the desired portion 56.

4.在接近與表面正交的角度(即與薄片20的表面 成60-90度角),藉由使用吸力將所要部分56剝離載體10的內部,以克服非結合區域50上的任何凡得瓦力來完成取出,而未破壞所要部分,參見第12圖。 4. Approaching an angle orthogonal to the surface (ie, with the surface of the sheet 20) At 60-90 degree angle, the desired portion 56 is peeled from the interior of the carrier 10 by suction to overcome any Van der Waals force on the non-bonded region 50 to complete the removal without destroying the desired portion, see Figure 12.

另一種取出的方法由第8圖和第9圖來說明。此方法包括利用結合區域40上的釋放排氣孔61、63沿著所要部分56之一側彎曲和斷裂載體10,以作為斷裂的開始。應將載體放在相對柔軟的撓性材料98上。排氣孔開始於結合區域40上的釋放排氣孔61或63,並且藉由斷裂桿92產生的彎曲應力,裂縫在薄片20下方沿著斷裂桿92延伸穿過載體10。在載體10與該部分的薄片20伸出到排氣孔61、63的右邊之後,如第8圖中所圖示,所要部分56即從右側斷裂(如第8圖中圖示的方向),然後所要部分56可以在箭頭58的方向上滑離載體。 Another method of taking out is illustrated by Figs. 8 and 9. The method includes bending and breaking the carrier 10 along one side of the desired portion 56 using the release vents 61, 63 on the bonding region 40 as the beginning of the fracture. The carrier should be placed on a relatively flexible material 98. The venting opening begins at the release vent 61 or 63 on the bond area 40, and the crack extends under the lamella 20 along the rupture rod 92 through the carrier 10 by the bending stress generated by the rupture rod 92. After the carrier 10 and the portion of the sheet 20 project to the right of the vent holes 61, 63, as illustrated in Fig. 8, the desired portion 56 is broken from the right side (as illustrated in Fig. 8), The desired portion 56 can then slide away from the carrier in the direction of arrow 58.

取代機械刻劃或是除了機械刻劃之外,可以使用雷射切割。舉例來說,如下參照第10圖,使用CO2雷射可能是有利的。 Instead of mechanical scoring or in addition to mechanical scribing, laser cutting can be used. By way of example, with reference to Figure 10 below, the use of CO 2 laser may be advantageous.

當使用CO2雷射光束94來製作周邊排氣孔60以切割所要部分56的周邊57時,形成釋放排氣孔及取出(不管是經由剝落或是滑落)可以使用與上述相同的技術與方式來完成。然而,不像機械刻劃,CO2雷射能夠全體切割薄片20。CO2雷射切割不需要載體10與薄片20的收縮來使排氣孔延伸穿過厚度22,所以將雷射切割使用於較厚的載體10可以是有利的。至少以雷射切割周邊排氣孔60也可以產生具有較高強度的高品質部分邊緣,而得以有較可靠的剝落程序及較高的 所要部分56取出產率。對於CO2雷射切割,將雷射光束94在薄片20表面上聚焦成直徑小的圓形光束形狀,並沿著所需的軌道移動,後面並跟隨冷卻劑噴嘴96。雷射分離的開始可以藉由相同的刻劃輪90來進行,刻劃輪90形成了釋放排氣孔。冷卻劑噴嘴96可以是例如空氣噴嘴,該空氣噴嘴經由小直徑的孔輸送壓縮氣流到薄片的表面上。使用水或氣液噴霧是較佳的,因為水或氣液噴霧可以增加薄片20與載體10之間的吸引力。 When the CO 2 laser beam 94 is used to make the peripheral venting opening 60 to cut the periphery 57 of the desired portion 56, the same technique and manner as described above can be used to form the venting opening and take out (whether by peeling or slipping). To be done. However, unlike mechanical scoring, the CO 2 laser can cut the sheet 20 in its entirety. The CO 2 laser cutting does not require the shrinkage of the carrier 10 and the sheet 20 to extend the venting holes through the thickness 22, so it may be advantageous to use laser cutting for the thicker carrier 10. Cutting the peripheral venting opening 60 at least by laser can also produce a high quality portion of the edge having a higher strength, with a more reliable peeling procedure and a higher desired portion 56 take-out yield. For CO 2 laser cutting, the laser beam 94 is focused to a small diameter circular beam shape on the surface of the sheet 20, and moves along a desired track, behind and follow the coolant nozzle 96. The beginning of the laser separation can be performed by the same scoring wheel 90, which forms the release vent. The coolant nozzle 96 can be, for example, an air nozzle that delivers a compressed gas stream to the surface of the sheet via a small diameter orifice. The use of water or gas-liquid spray is preferred because water or gas-liquid spray can increase the attractive force between the sheet 20 and the carrier 10.

如第11圖和第16圖所圖示,噴嘴96的一種設計包括具有4個小直徑孔201、202、203、204的噴頭200,以發射冷卻液體用於切割長方形部分。孔徑較佳為1 mm,每個孔201、202、203、204係用於一個方向的切割。當經由孔205發射的雷射光束94接近周邊排氣孔60的角(例如90度轉角)時,控制系統(未圖示)逐步關閉一個孔並開啟另一個孔,以在與例如第一個切割垂直的方向上製作切割。或者,不需要在垂直方向上移動噴頭200。亦即,將孔201、202、203及204圖示為放在噴頭200的周邊附近互成90度角,但這並非必須的。 As illustrated in Figures 11 and 16, one design of the nozzle 96 includes a showerhead 200 having four small diameter holes 201, 202, 203, 204 for emitting a cooling liquid for cutting the rectangular portion. The aperture is preferably 1 mm, each hole 201, 202, 203, 204 is used for cutting in one direction. When the laser beam 94 emitted via the aperture 205 approaches the angle of the peripheral vent 60 (eg, a 90 degree angle), the control system (not shown) gradually closes one aperture and opens the other aperture to, for example, the first Make a cut in the vertical direction of the cut. Alternatively, it is not necessary to move the head 200 in the vertical direction. That is, the holes 201, 202, 203, and 204 are illustrated as being placed at an angle of 90 degrees to each other near the periphery of the head 200, but this is not essential.

雖然上述四個冷卻孔201-204的配置對於切割一般的長方形部分是有利的,但也可以有不同的配置。舉例來說,如第16圖所圖示,第一孔201可以在圖示的位置,但第二孔212可能位在從第一孔201順時針方向120°的位置,而且第三孔213可能位在從第二孔212順時針方向另一個90°的位置。在這個方式中,可以使用該等孔來切割長方形圖案,例如藉 由在與雷射孔205及第一冷卻孔201共直線的第一方向上移動噴頭200,然後沿著與在雷射孔205及第二冷卻孔212之間延伸的線共直線的線往上(如第16圖中圖示的方向),之後沿著與在雷射孔205及第三孔213之間延伸的線共直線的線往下(如第16圖中圖示的方向)。當然,可以使用任何所需數量的冷卻孔來配合各種形狀的周邊排氣孔60。 Although the configuration of the above four cooling holes 201-204 is advantageous for cutting a generally rectangular portion, it may have a different configuration. For example, as illustrated in FIG. 16, the first hole 201 may be in the position shown, but the second hole 212 may be located at a position 120° clockwise from the first hole 201, and the third hole 213 may The position is another 90° clockwise from the second hole 212. In this way, you can use these holes to cut rectangular patterns, such as The head 200 is moved in a first direction that is linear with the laser hole 205 and the first cooling hole 201, and then goes up along a line that is straight with the line extending between the laser hole 205 and the second cooling hole 212. (as indicated in Fig. 16), then downward along a line that is straight with the line extending between the laser aperture 205 and the third aperture 213 (as illustrated in Fig. 16). Of course, any desired number of cooling holes can be used to fit the peripheral vents 60 of various shapes.

如第17圖中所圖示,噴嘴的另一種設計包括具有一個冷卻孔201及旋轉機構(未圖示出,但其可在箭頭215的方向轉動噴頭200)的噴頭200,當噴頭200被移動通過周邊排氣孔60的角落時,噴頭200可讓冷卻孔201跟隨雷射光束(從孔205發射出)。如從第10圖、第11圖、第16圖及第17圖可看出的,雷射與冷卻噴嘴可以是分開的,或者可以經由同一個噴頭傳送雷射與冷卻噴嘴。 As illustrated in Fig. 17, another design of the nozzle includes a showerhead 200 having a cooling aperture 201 and a rotating mechanism (not shown, but which can rotate the showerhead 200 in the direction of arrow 215) when the showerhead 200 is moved When passing through the corners of the peripheral venting opening 60, the showerhead 200 allows the cooling aperture 201 to follow the laser beam (emitted from the aperture 205). As can be seen from Figures 10, 11, 16, and 17, the laser and cooling nozzles can be separate or the laser and cooling nozzles can be delivered via the same nozzle.

CO2雷射的另一個優點在於雷射光束可對可撓性玻璃與載體產生局部加熱,而可以減少玻璃之間的吸引力。雷射加熱也可以引發可撓性玻璃的局部變形,使得取出製程更為容易。 Another advantage of CO 2 lasers is that the laser beam can locally heat the flexible glass and the carrier, while reducing the attractive force between the glasses. Laser heating can also cause local deformation of the flexible glass, making the removal process easier.

薄片/載體產品及使用製程Sheet/carrier product and process

以上描述從與載體10結合的薄片20形成一個所要部分56的情況。然而,可以從與載體10結合的薄片20製作任何所需數量的所要部分56,取決於薄片20的大小與所要部分56的大小。舉例來說,該薄片可以是Gen 2的大小或更大,例如Gen 3、Gen 4、Gen 5、Gen 8或更大(如從100 mm x 100 mm到3公尺x 3公尺或更大的片尺寸)。為了讓使用者決定 想要從一個與載體10結合的薄片20產生的所要部分56之配置(就例如所要部分56的尺寸、數量及形狀方面而言),可以如第13圖及第14圖所圖示供應薄片20。更具體而言,提供具有薄片20與載體10的製品2,薄片20在結合區域40與載體10結合,結合區域40圍繞非結合區域50。 The above description has been made from the sheet 20 combined with the carrier 10 to form a desired portion 56. However, any desired number of desired portions 56 can be made from the sheet 20 bonded to the carrier 10, depending on the size of the sheet 20 and the size of the desired portion 56. For example, the sheet may be of the size of Gen 2 or larger, such as Gen 3, Gen 4, Gen 5, Gen 8 or larger (eg from 100 mm x 100 mm to 3 meters x 3 meters or more) Slice size). In order for the user to decide To configure the desired portion 56 from a sheet 20 associated with the carrier 10 (as for example in terms of size, number and shape of the desired portion 56), the sheet 20 can be supplied as illustrated in Figures 13 and 14. . More specifically, an article 2 having a sheet 20 and a carrier 10 is provided, the sheet 20 is bonded to the carrier 10 at a bonding region 40, and the bonding region 40 surrounds the non-bonding region 50.

結合區域40位於薄片20的周邊。有利的是結合區域40在製品2的周邊密封薄片20與載體10之間的任何縫隙,使得製程流體不會陷入,因為以各種方式陷入的製程流體可能會污染後續傳送製品2的製程。 Bonding zone 40 is located at the periphery of sheet 20. Advantageously, the bonding zone 40 seals any gaps between the sheet 20 and the carrier 10 at the periphery of the article 2 such that process fluids do not get trapped because process fluids trapped in various ways can contaminate the subsequent process of transporting the article 2.

可以藉由上述任一方法或材料來產生非結合區域50。然而,特別適當的是,以預期在裝置處理過程中的溫度下可維持其與薄片20的非結合本質(但在較高的溫度下可與薄片20結合)的材料製成的釋放層塗覆載體。舉例來說,釋放層30可由無機材料(例如氧化物薄膜)製成。舉例來說,該等材料可選自以下的ITO(銦錫氧化物)、SiO、SiO2、F-SiO2、SnO2、F-SnO2、Bi2O3、AZO、GAO、Ga2O3、Al2O3、MgO、Y2O3、La2O3、Pr6O11、Pr2O3、Sc2O3、WO3、HfO2、In2O3、ZrO2、Nd2O3、Ta2O5、CeO2、Nb2O5、TiO、TiO2、Ti3O5、F-TiO2、TiN(氮化鈦)、TiON(氮氧化鈦)、NiO、ZnO或上述物質的組合中之一或多者。適當的金屬包括例如鋁、鉬及鎢。當被加熱到約450至600℃的溫度時,這樣的材料將不會與玻璃薄片20結合。然而,當加熱到(預定的溫度625℃)或是到玻璃薄片之應變點100度內的溫度時,或是例如在一些實施例中到達玻璃薄片之應變點50度內的溫度時,這樣的材料 將與玻璃薄片20結合。在某些例子中,可以使用濺鍍的金屬,例如Ti、Si、Sn、Au、Ag、Al、Cr、Cu、Mg。因此,非結合區域50將保持其釋放部分薄片20的能力,即使是在製品2已經在高達450至600℃的溫度下處理之後。另一方面,可以藉由加熱到預定的溫度而選擇性地將部分的釋放層30與玻璃薄片20結合,這種局部加熱可以經由例如雷射、其他的光柵熱源、加熱線圈或誘導加熱器來完成。更一般而言,其他用於非結合區域的適當材料包括金屬氧化物、金屬氮氧化物或金屬氮化物,其中該金屬成分可包括In、Si、Sn、Bi、Zn、Ga、Al、Mg、Ca、Y、La、Pr、Sc、W、Hf、Zr、Nd、Ta、Ce、Nb、Ti、Mo或上述物質的組合。 The non-bonded region 50 can be produced by any of the methods or materials described above. However, it is particularly appropriate to apply a release layer of a material that is expected to maintain its unbonded nature with the sheet 20 at the temperature during processing of the device (but at a higher temperature, can be combined with the sheet 20). Carrier. For example, the release layer 30 can be made of an inorganic material such as an oxide film. For example, the materials may be selected from the group consisting of ITO (indium tin oxide), SiO, SiO 2 , F-SiO 2 , SnO 2 , F-SnO 2 , Bi 2 O 3 , AZO, GAO, Ga 2 O. 3 , Al 2 O 3 , MgO, Y 2 O 3 , La 2 O 3 , Pr 6 O 11 , Pr 2 O 3 , Sc 2 O 3 , WO 3 , HfO 2 , In 2 O 3 , ZrO 2 , Nd 2 O 3 , Ta 2 O 5 , CeO 2 , Nb 2 O 5 , TiO, TiO 2 , Ti 3 O 5 , F-TiO 2 , TiN (titanium nitride), TiON (titanium oxide), NiO, ZnO or the like One or more of the combinations of substances. Suitable metals include, for example, aluminum, molybdenum, and tungsten. Such materials will not bond with the glass flakes 20 when heated to a temperature of about 450 to 600 °C. However, when heated to (predetermined temperature Such material will be combined with the glass flakes 20 when it is at a temperature of 100 degrees to the strain point of the glass flakes or, for example, within 50 degrees of the strain point of the glass flakes in some embodiments. In some examples, sputtered metals such as Ti, Si, Sn, Au, Ag, Al, Cr, Cu, Mg may be used. Thus, the non-bonded region 50 will retain its ability to release a portion of the sheet 20, even after the article 2 has been processed at temperatures up to 450 to 600 °C. Alternatively, a portion of the release layer 30 can be selectively bonded to the glass sheet 20 by heating to a predetermined temperature, such as by laser, other grating heat source, heating coil or induction heater. carry out. More generally, other suitable materials for the non-bonded regions include metal oxides, metal oxynitrides or metal nitrides, wherein the metal components may include In, Si, Sn, Bi, Zn, Ga, Al, Mg, Ca, Y, La, Pr, Sc, W, Hf, Zr, Nd, Ta, Ce, Nb, Ti, Mo or a combination of the above.

現將描述實現這種功能(在薄片20已經在薄片20的周邊附近與載體10結合之後,允許形成各種形狀的結合區域40)的一種具體方式。此具體方式包括藉由在載體10(由玻璃製成,例如康寧公司的鷹代碼(Eagle code)玻璃)上以濺鍍或PECVD沉積約100-500 nm厚的矽膜來形成釋放層30,然後以熱使矽膜表面去氫化,以及在薄片20的背面上濺鍍100-500 nm厚的金屬膜。選擇金屬,使得該金屬將可在高溫下(例如600℃)與矽形成矽化物,並且由於濺鍍中的晶粒尺寸,該金屬將具有足夠的表面粗糙度(例如Ra2 nm),以形成非結合區域。藉由雷射照射透過載體10的局部加熱將使矽與金屬反應形成耐火的矽化物,並形成結合區域40。適當的金屬包括(而且不限於)鋁、鉬及鎢。 A specific way of accomplishing this function (allowing the formation of bonding regions 40 of various shapes after the sheet 20 has been bonded to the carrier 10 near the periphery of the sheet 20) will now be described. This specific manner includes forming the release layer 30 by depositing a ruthenium film of about 100-500 nm thick on the carrier 10 (made of glass, such as Corning's Eagle code glass) by sputtering or PECVD. The surface of the ruthenium film was dehydrogenated by heat, and a metal film of 100-500 nm thick was sputtered on the back surface of the sheet 20. Select the metal so that the metal will be at high temperatures (eg 600 ° C) and telluride to form a telluride, and due to the grain size in the sputtering, the metal will have sufficient surface roughness (such as Ra 2 nm) to form a non-bonded region. Local heating through the carrier 10 by laser irradiation will cause the ruthenium to react with the metal to form a refractory ruthenium and form a bonding region 40. Suitable metals include (and are not limited to) aluminum, molybdenum, and tungsten.

為了在一個製品2上製作所需數量的所要部分56, 故製作了所需數量的非結合區域50,非結合區域50被結合輪廓線42圍繞,參見第15圖。可以藉由選擇性地以雷射描繪所需的形狀來局部地將釋放層30加熱到預定的溫度,而選擇性地形成結合輪廓線42,在加熱到預定溫度處釋放層30將黏著並密封於薄片20。之後,處理製品2以便在輪廓線42所界定的區域內形成裝置。在裝置處理之後,可以藉由上述任一種方式將所要部分56與載體10分離。假使需要將所要部分56滑離載體,則可先將製品2切割成任意數量較少的片,藉由在適合的相鄰輪廓線42之間切割,例如沿著任意圖案或虛線5之子集合。或者,可以沿著製作來與周邊排氣孔相交的線切割製品2,該周邊排氣孔係界定所要部分56的周邊57。以此方式,與上面關於第8圖和第9圖所述類似的,僅需要較少的步驟來將所要部分56滑離載體。在切割出製品2之後,可以進行薄片20上的裝置之進一步處理。 In order to produce the desired number of desired portions 56 on an article 2, Thus, a desired number of non-bonded regions 50 are produced, and the non-bonded regions 50 are surrounded by a combined contour 42 (see Figure 15). The bonding layer 42 can be selectively formed by selectively heating the release layer 30 to a predetermined temperature in a desired shape by laser, and the release layer 30 will adhere and seal upon heating to a predetermined temperature. On the sheet 20. Thereafter, the article 2 is treated to form a device within the area defined by the contour 42. After processing of the device, the desired portion 56 can be separated from the carrier 10 by any of the methods described above. In the event that the desired portion 56 needs to be slid away from the carrier, the article 2 can be first cut into any number of fewer sheets by cutting between suitable adjacent contours 42, such as along any pattern or subset of dashed lines 5. Alternatively, the article 2 can be cut along a line that is made to intersect the peripheral venting aperture that defines the perimeter 57 of the desired portion 56. In this manner, as described above with respect to Figures 8 and 9, only minor steps are required to slide the desired portion 56 away from the carrier. After the article 2 is cut, further processing of the device on the sheet 20 can be performed.

結論in conclusion

製品(在本案例中為載體上的薄玻璃)的氣密性測試可以藉由數種方法來完成,包括目視或顯微鏡量測液體或氣體侵入或離開密封製品之任何區域。 The hermeticity test of the article (in this case, the thin glass on the carrier) can be accomplished by several methods, including visual or microscopic measurement of any area in which the liquid or gas intrudes or leaves the sealed article.

應強調的是,上述本發明之實施例(特別是任何「較佳的」實施例)僅為可能的實施範例,僅提出用於清楚瞭解本發明之各種原理。在不實質偏離本發明之精神與各種原理下,可以對上述本發明之實施例進行許多的變化與修改。意圖將所有的這種修改與變化涵括於本文中的揭示及以下申請專利範圍之範疇內。 It should be emphasized that the above-described embodiments of the present invention, particularly any of the "preferred" embodiments, are merely possible embodiments, and are merely intended to provide a clear understanding of the various principles of the present invention. Many variations and modifications of the embodiments of the invention described above are possible without departing from the spirit and scope of the invention. All such modifications and variations are intended to be included within the scope of the disclosure and the scope of the following claims.

2‧‧‧製品 2‧‧‧Products

3‧‧‧箭頭 3‧‧‧ arrow

10‧‧‧載體 10‧‧‧ Carrier

20‧‧‧薄片 20‧‧‧Sheet

40‧‧‧結合區域 40‧‧‧Combined area

50‧‧‧非結合區域 50‧‧‧Unbonded area

52‧‧‧周邊 52‧‧‧around

56‧‧‧所要部分 56‧‧‧ required parts

60‧‧‧周邊排氣孔 60‧‧‧ peripheral vents

61‧‧‧排氣孔 61‧‧‧ venting holes

63‧‧‧排氣孔 63‧‧‧ venting holes

64‧‧‧距離 64‧‧‧ Distance

65‧‧‧排氣孔 65‧‧‧ venting holes

66‧‧‧距離 66‧‧‧distance

67‧‧‧排氣孔 67‧‧‧ venting holes

69‧‧‧排氣孔 69‧‧‧ venting holes

Claims (1)

一種切割設備,包含:具有複數個孔之一噴頭;一雷射源,該雷射源光學式耦接至該複數個孔中之一第一孔,以便傳送一雷射光束穿過該第一孔;以及一冷卻流體源,該冷卻流體源與該複數個孔中之至少一第二孔及至少一第三孔流體連通,其中一第一線配置於與一第二線形成一第一角度,該第一線從該第一孔延伸至該第二孔,該第二線從該第一孔延伸至該第三孔,其中該第一孔、該第二孔及該第三孔為非共直線。 A cutting apparatus comprising: a showerhead having a plurality of apertures; a laser source optically coupled to one of the plurality of apertures for transmitting a laser beam through the first a hole; and a cooling fluid source, the cooling fluid source is in fluid communication with at least one of the plurality of holes and the at least one third hole, wherein the first line is disposed at a first angle with a second line The first line extends from the first hole to the second hole, and the second line extends from the first hole to the third hole, wherein the first hole, the second hole and the third hole are non- A total of straight lines.
TW102105292A 2012-02-08 2013-02-08 Cutting apparatus TWI605948B (en)

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