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TWI687141B - 附透明導電膜之基板 - Google Patents

附透明導電膜之基板 Download PDF

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TWI687141B
TWI687141B TW105102551A TW105102551A TWI687141B TW I687141 B TWI687141 B TW I687141B TW 105102551 A TW105102551 A TW 105102551A TW 105102551 A TW105102551 A TW 105102551A TW I687141 B TWI687141 B TW I687141B
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conductive film
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和田正紀
柏谷健
平尾徹
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日商日本電氣硝子股份有限公司
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Abstract

本發明提供一種設置於去除了透明導電膜之部分之絕緣膜不易剝離的附透明導電膜之基板。
本發明之附透明導電膜之基板之特徵在於：其係包括基板1、及設置於基板1上且經圖案化之透明導電膜2的附透明導電膜之基板10，且於基板1上形成有藉由圖案化而去除了透明導電膜2之去除區域A1、未去除透明導電膜2之未去除區域A2、及設置於去除區域A1與未去除區域A2之間之交界區域A3，且於交界區域A3形成有透明導電膜2形成為島狀之島狀部分2b。

Description

附透明導電膜之基板
本發明係關於一種附透明導電膜之基板。
已知於電漿顯示器或電致發光元件等中，將用作電極之透明導電膜形成於玻璃基板等基板上，並利用雷射將透明導電膜圖案化(專利文獻1及專利文獻2)。
於藉由圖案化而去除了透明導電膜之部分通常為了鈍化等而設置絕緣膜。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2007-207554號公報
[專利文獻2]日本專利特開2006-267834號公報
對上述絕緣膜要求不會容易地自基板剝離。
本發明之目的在於提供一種設置於去除了透明導電膜之部分之絕緣膜不易剝離的附透明導電膜之基板。
本發明係一種附透明導電膜之基板，其特徵在於：具備基板、及設置於基板上且經圖案化之透明導電膜，且於基板上形成有藉由圖案化而去除了透明導電膜之去除區域、未去除透明導電膜之未去除區 域、及設置於去除區域與未去除區域之間之交界區域，且於交界區域形成有透明導電膜形成為島狀之島狀部分。
俯視時之島狀部分之面積較佳為交界區域之面積之25%~75%之範圍內。
基板較佳為透明基板。
基板較佳為玻璃基板。
作為圖案化，可列舉利用雷射進行之圖案化。於該情形時，雷射較佳為飛秒雷射。
根據本發明，能夠抑制設置於去除了透明導電膜之部分之絕緣膜之剝離。
1:基板
1a:主面
2:透明導電膜
2a:半島狀部分
2b:島狀部分
3:絕緣膜
10:附透明導電膜之基板
A1:去除區域
A2:未去除區域
A3:交界區域
圖1係表示本發明之一實施形態之附透明導電膜之基板的示意性剖視圖。
圖2係表示在圖1所示之實施形態之附透明導電膜之基板設置有絕緣膜之狀態的示意性剖視圖。
圖3係表示本發明之一實施形態之附透明導電膜之基板中之交界區域的掃描式電子顯微鏡照片。
圖4係示意性地表示圖3所示之交界區域之俯視圖。
圖5係對圖4所示之交界區域中之島狀部分附以影線之示意性俯視圖。
以下，對較佳之實施形態進行說明。但，以下之實施形態僅為例示，本發明並不限定於以下之實施形態。又，於各圖式中，有時對實質上具有相同功能之構件附以相同之符號加以參照。
圖1係表示本發明之一實施形態之附透明導電膜之基板的示意性 剖視圖。如圖1所示，本實施形態之附透明導電膜之基板10具備基板1、及設置於基板1之主面1a上之透明導電膜2。透明導電膜2經圖案化。藉由將透明導電膜2圖案化，而於基板1之主面1a上形成藉由圖案化而去除了透明導電膜2之去除區域A1、及未去除透明導電膜2之未去除區域A2。
又，於基板1之主面1a上形成有設置於去除區域A1與未去除區域A2之間之交界區域A3。如圖1所示，於交界區域A3，透明導電膜2之厚度隨著接近去除區域A1而逐漸變薄。
作為透明導電膜2，例如可使用銦錫氧化物(ITO)、鋁鋅氧化物(AZO)、銦鋅氧化物(IZO)、摻氟之錫氧化物(FTO)等具有導電性之複合氧化物薄膜。尤其是可較佳地使用銦錫氧化物。於本實施形態中，由銦錫氧化物形成透明導電膜2。透明導電膜2之厚度較佳為20nm~200nm之範圍內，進而較佳為50nm~150nm之範圍內。
基板1較佳為玻璃基板等透明基板。作為玻璃基板，可使用鈉鈣玻璃、鋁矽酸鹽玻璃、硼矽酸玻璃、無鹼玻璃等。於本實施形態中，使用包含鈉鈣玻璃之玻璃基板。
透明導電膜2之圖案化較佳為利用雷射進行之圖案化。藉由利用雷射將透明導電膜2圖案化，而將透明導電膜2之一部分去除，形成去除區域A1。作為雷射，可使用其波長下之透明導電膜2之吸收率較大之雷射。例如，於ITO膜之情形時，於1000nm以上之波長下，吸收率增大。因此，藉由使用1000nm以上之波長之雷射進行圖案化，能夠利用雷射照射去除ITO膜，形成去除區域A1。藉由該圖案化，形成去除區域A1，並且於其周邊形成交界區域A3。
雷射之波長只要為透明導電膜2於該波長下具有較大之吸收率者，則並無特別限定。雷射之波長例如較佳為1000nm以上，更佳為1300nm以上，進而較佳為1500nm以上。雷射之波長之上限值並無特 別限定，雷射之波長一般為2000nm以下。
雷射較佳為10微微秒以下之脈衝雷射，更佳為1微微秒以下之超短脈衝雷射，尤佳為飛秒雷射。藉由使用此種脈衝寬度較小之雷射，能夠產生多光子吸收現象，不使熱擴散至周邊部分而進行圖案化。
雷射之點徑較佳為去除區域A1於y方向上之寬度之0.2倍~5倍之範圍內，進而較佳為0.5倍~2倍之範圍內。去除區域A1於y方向上之寬度之尺寸一般較佳為3μm~50μm之範圍內，進而較佳為5μm~20μm之範圍內。於去除區域A1較寬之情形時，可操作複數次進行雷射，或使用複數之雷射，使雷射之點略微重疊而進行圖案化。又，交界區域A3於y方向上之寬度之尺寸一般較佳為0.3μm~10μm之範圍內，進而較佳為0.5μm~5μm之範圍內。
再者，雷射一般係自透明導電膜2側向透明導電膜2之厚度方向(z方向)照射。
圖1所示之實施形態之附透明導電膜之基板10例如可用作有機電致發光元件之電極基板。於該情形時，於附透明導電膜之基板10上設置有機電致發光層。又，於該情形時，為了提高自有機電致發光層之光之提取效率，亦可於基板1與透明導電膜2之間設置折射率高於基板1之基底玻璃層。
圖2係表示在圖1所示之實施形態之附透明導電膜之基板設置有絕緣膜之狀態的示意性剖視圖。如圖2所示，以覆蓋附透明導電膜之基板10之去除區域A1中之基板1之主面1a及交界區域A3上之方式設置絕緣膜3。絕緣膜3主要係為了鈍化等而設置。
絕緣膜3可由氮化矽、氧化矽、氮氧化矽、氧化鋁等無機材料、或環氧樹脂、丙烯酸系樹脂、胺基甲酸酯樹脂等有機材料形成。
圖3係表示本發明之一實施形態之附透明導電膜之基板中之交界區域的掃描式電子顯微鏡照片。圖4及圖5係示意性地表示圖3所示之 交界區域之俯視圖。再者，圖5係對圖4所示之交界區域中之島狀部分附以影線之示意性俯視圖。圖3、圖4及圖5表示俯視下、即自z方向觀察之交界區域A3以及其附近之去除區域A1及未去除區域A2。又，圖3、圖4及圖5表示設置絕緣膜3前之圖1所示之狀態。
如圖3、圖4及圖5所示，於本發明中，於交界區域A3形成有以自未去除區域A2連續地向y方向延伸之方式形成之包含透明導電膜2之半島狀部分2a、及與未去除區域A2實質上分離地形成之包含透明導電膜2之島狀部分2b。再者，包含透明導電膜2之島狀部分2b可藉由使用具有對應於透明導電膜2之材質等之波長或脈衝寬度之雷射於特定之條件下圖案化，從而形成於交界區域A3。如此，藉由於交界區域A3形成包含透明導電膜2之島狀部分2b，能夠抑制設置於其上之絕緣膜3之剝離。能夠抑制絕緣膜3之剝離之原因認為如以下所述。
即，若於島狀部分2b上設置絕緣膜3，則絕緣膜3以與島狀部分2b周圍之側壁部相接之方式形成。因此，絕緣膜3以陷入至鄰接之島狀部分2b之間之方式形成。又，島狀部分2b以陷入至絕緣膜3之狀態存在。因此，認為能夠發揮強力之投錨效應，能夠抑制絕緣膜3之剝離。再者，為了有效地抑制絕緣膜3之剝離，俯視時之島狀部分2b之面積(附以影線之部分之面積)較佳為交界區域A3之面積之25%~75%之範圍內。若島狀部分2b之面積少於上述範圍，則陷入至絕緣膜3之島狀部分2b變少，有無法獲得抑制絕緣膜3之剝離之效果的情況。又，若島狀部分2b之面積多於上述範圍，則陷入至鄰接之島狀部分2b之間之絕緣膜3之部分變少，有無法獲得抑制絕緣膜3之剝離之效果的情況。島狀部分2b之面積更佳為交界區域A3之面積之40%~60%之範圍內。又，1個島狀部分2b之大小以投影面積直徑計，較佳為0.1μm~0.6μm之範圍內，進而較佳為0.1μm~0.3μm之範圍內。
再者，未去除區域A2與交界區域A3之交界之位置如圖4及圖5所 示，係透明導電膜2被去除而開始露出主面1a之位置，交界區域A3與去除區域A1之交界之位置係島狀部分2b實質上逐漸不存在之位置。
再者，島狀部分2b之面積之比率較佳為於交界區域A3之面積為0.7μm2~25μm2之範圍內之視野下求出。
又，作為用以將島狀部分2b之面積設為本發明之範圍內之圖案化條件，較佳為使用飛秒雷射。
1‧‧‧基板
1a‧‧‧主面
2‧‧‧透明導電膜
10‧‧‧附透明導電膜之基板
A1‧‧‧去除區域
A2‧‧‧未去除區域
A3‧‧‧交界區域

Claims (6)

  1. 一種附透明導電膜之基板，其係包括基板、及設置於上述基板之主面上且經圖案化之透明導電膜者，且於上述基板上形成有藉由圖案化去除了上述透明導電膜而露出上述主面之去除區域、未去除上述透明導電膜之未去除區域、及設置於上述去除區域與上述未去除區域之間之交界區域，且於上述交界區域形成有上述透明導電膜形成為島狀之島狀部分，絕緣膜係以覆蓋上述去除區域之上述主面及上述交界區域之方式設置。
  2. 如請求項1之附透明導電膜之基板，其中俯視時之上述島狀部分之面積為上述交界區域之面積之25%~75%之範圍內。
  3. 如請求項1或2之附透明導電膜之基板，其中上述基板為透明基板。
  4. 如請求項1或2之附透明導電膜之基板，其中上述基板為玻璃基板。
  5. 如請求項1或2之附透明導電膜之基板，其中上述圖案化係藉由雷射而進行之圖案化。
  6. 如請求項5之附透明導電膜之基板，其中上述雷射為飛秒雷射。
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