JP6519277B2 - 透明導電膜付基板 - Google Patents
透明導電膜付基板 Download PDFInfo
- Publication number
- JP6519277B2 JP6519277B2 JP2015071470A JP2015071470A JP6519277B2 JP 6519277 B2 JP6519277 B2 JP 6519277B2 JP 2015071470 A JP2015071470 A JP 2015071470A JP 2015071470 A JP2015071470 A JP 2015071470A JP 6519277 B2 JP6519277 B2 JP 6519277B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transparent conductive
- conductive film
- area
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 51
- 238000000059 patterning Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 71
- 230000000694 effects Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Electric Cables (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
Description
1a…主面
2…透明導電膜
2a…半島状部分
2b…島状部分
3…絶縁膜
10…透明導電膜付基板
A1…除去領域
A2…非除去領域
A3…境界領域
Claims (4)
- 基板と、前記基板の主面上に設けられ、パターニングされた透明導電膜とを備える透明導電膜付基板であって、
前記基板の上に、前記透明導電膜がパターニングにより除去されて前記主面が露出されている除去領域と、前記透明導電膜が除去されていない非除去領域と、前記除去領域と前記非除去領域の間に設けられた境界領域とが形成されてなり、
前記境界領域において、前記透明導電膜が島状に形成された島状部分が形成されてなり、絶縁膜が、前記除去領域の前記主面及び前記境界領域を覆うように設けられている、透明導電膜付基板。 - 平面視したときの前記島状部分の面積が、前記境界領域の面積の25%〜75%の範囲内である、請求項1に記載の透明導電膜付基板。
- 前記基板が、透明基板である、請求項1または2に記載の透明導電膜付基板。
- 前記基板が、ガラス基板である、請求項1〜3のいずれか一項に記載の透明導電膜付基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071470A JP6519277B2 (ja) | 2015-03-31 | 2015-03-31 | 透明導電膜付基板 |
PCT/JP2016/050754 WO2016157930A1 (ja) | 2015-03-31 | 2016-01-13 | 透明導電膜付基板 |
CN201680004942.4A CN107211506B (zh) | 2015-03-31 | 2016-01-13 | 带透明导电膜的基板 |
EP16771816.2A EP3280229A4 (en) | 2015-03-31 | 2016-01-13 | Substrate provided with transparent conductive film |
KR1020177016908A KR102381105B1 (ko) | 2015-03-31 | 2016-01-13 | 투명 도전막이 형성된 기판 |
US15/539,722 US10187980B2 (en) | 2015-03-31 | 2016-01-13 | Substrate provided with transparent conductive film |
TW105102551A TWI687141B (zh) | 2015-03-31 | 2016-01-27 | 附透明導電膜之基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071470A JP6519277B2 (ja) | 2015-03-31 | 2015-03-31 | 透明導電膜付基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016190392A JP2016190392A (ja) | 2016-11-10 |
JP6519277B2 true JP6519277B2 (ja) | 2019-05-29 |
Family
ID=57005917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015071470A Expired - Fee Related JP6519277B2 (ja) | 2015-03-31 | 2015-03-31 | 透明導電膜付基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10187980B2 (ja) |
EP (1) | EP3280229A4 (ja) |
JP (1) | JP6519277B2 (ja) |
KR (1) | KR102381105B1 (ja) |
CN (1) | CN107211506B (ja) |
TW (1) | TWI687141B (ja) |
WO (1) | WO2016157930A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6935132B2 (ja) * | 2017-07-21 | 2021-09-15 | 株式会社ディスコ | 静電チャックプレートの製造方法 |
JP6998703B2 (ja) | 2017-08-29 | 2022-02-04 | 古河電気工業株式会社 | 透明導電膜付基板の製造方法、透明導電膜付基板及び太陽電池 |
CN110561858B (zh) * | 2019-09-18 | 2021-03-16 | 福耀玻璃工业集团股份有限公司 | 一种夹层加热玻璃 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5130971A (ja) * | 1974-09-10 | 1976-03-16 | Seiko Instr & Electronics | Tomeidenkyokunopataankeiseiho |
US4713518A (en) | 1984-06-08 | 1987-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device manufacturing methods |
JPS6189636A (ja) * | 1984-10-08 | 1986-05-07 | Semiconductor Energy Lab Co Ltd | 光加工方法 |
US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
JP3556990B2 (ja) * | 1995-02-13 | 2004-08-25 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子の微細パターン化方法及びそれより得られた素子 |
US7073246B2 (en) * | 1999-10-04 | 2006-07-11 | Roche Diagnostics Operations, Inc. | Method of making a biosensor |
JP4738860B2 (ja) | 2005-03-25 | 2011-08-03 | 株式会社リコー | エレクトロクロミック表示素子 |
US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4803726B2 (ja) | 2006-02-01 | 2011-10-26 | 旭硝子株式会社 | 電子回路及びその製造方法 |
US20080029152A1 (en) * | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
JP4872620B2 (ja) * | 2006-11-17 | 2012-02-08 | Tdk株式会社 | 透明導電フィルムの製造方法 |
JP5571870B2 (ja) * | 2007-09-21 | 2014-08-13 | 株式会社東芝 | 極微細構造を有する光透過型金属電極およびその製造方法 |
JP5333822B2 (ja) * | 2008-06-23 | 2013-11-06 | 日立化成株式会社 | めっき用導電性基材、それを用いた導体層パターン若しくは導体層パターン付き基材の製造方法、導体層パターン付き基材及び電磁波遮蔽部材 |
US8518277B2 (en) * | 2009-02-12 | 2013-08-27 | Tpk Touch Solutions Inc. | Plastic capacitive touch screen and method of manufacturing same |
JP5293843B2 (ja) | 2012-01-24 | 2013-09-18 | デクセリアルズ株式会社 | 透明導電性素子、入力装置、電子機器および透明導電性素子作製用原盤 |
JP6047994B2 (ja) | 2012-01-24 | 2016-12-21 | デクセリアルズ株式会社 | 透明導電性素子およびその製造方法、入力装置、電子機器、ならびに透明導電層の加工方法 |
CN103309528A (zh) * | 2012-03-16 | 2013-09-18 | 瀚宇彩晶股份有限公司 | 触控面板及其制作方法 |
JP2015185512A (ja) * | 2014-03-26 | 2015-10-22 | 信越ポリマー株式会社 | 導電パターン形成基板及びその製造方法 |
-
2015
- 2015-03-31 JP JP2015071470A patent/JP6519277B2/ja not_active Expired - Fee Related
-
2016
- 2016-01-13 US US15/539,722 patent/US10187980B2/en active Active
- 2016-01-13 CN CN201680004942.4A patent/CN107211506B/zh not_active Expired - Fee Related
- 2016-01-13 KR KR1020177016908A patent/KR102381105B1/ko active IP Right Grant
- 2016-01-13 WO PCT/JP2016/050754 patent/WO2016157930A1/ja active Application Filing
- 2016-01-13 EP EP16771816.2A patent/EP3280229A4/en not_active Withdrawn
- 2016-01-27 TW TW105102551A patent/TWI687141B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP3280229A1 (en) | 2018-02-07 |
CN107211506A (zh) | 2017-09-26 |
JP2016190392A (ja) | 2016-11-10 |
CN107211506B (zh) | 2019-05-14 |
US20180007786A1 (en) | 2018-01-04 |
TW201635875A (zh) | 2016-10-01 |
WO2016157930A1 (ja) | 2016-10-06 |
KR20170133313A (ko) | 2017-12-05 |
EP3280229A4 (en) | 2018-10-31 |
KR102381105B1 (ko) | 2022-03-30 |
TWI687141B (zh) | 2020-03-01 |
US10187980B2 (en) | 2019-01-22 |
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