TWI683374B - 晶粒接合裝置及半導體裝置之製造方法 - Google Patents
晶粒接合裝置及半導體裝置之製造方法 Download PDFInfo
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- TWI683374B TWI683374B TW107106942A TW107106942A TWI683374B TW I683374 B TWI683374 B TW I683374B TW 107106942 A TW107106942 A TW 107106942A TW 107106942 A TW107106942 A TW 107106942A TW I683374 B TWI683374 B TW I683374B
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 221
- 239000013078 crystal Substances 0.000 claims abstract description 77
- 238000003384 imaging method Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 25
- 230000002159 abnormal effect Effects 0.000 claims description 13
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 abstract description 8
- 238000012986 modification Methods 0.000 description 29
- 230000004048 modification Effects 0.000 description 29
- 238000007689 inspection Methods 0.000 description 11
- 238000005304 joining Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 230000032258 transport Effects 0.000 description 11
- 238000004092 self-diagnosis Methods 0.000 description 8
- 230000002950 deficient Effects 0.000 description 6
- 241000309551 Arthraxon hispidus Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017062308A JP6818608B2 (ja) | 2017-03-28 | 2017-03-28 | ダイボンディング装置および半導体装置の製造方法 |
JP2017-062308 | 2017-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201903910A TW201903910A (zh) | 2019-01-16 |
TWI683374B true TWI683374B (zh) | 2020-01-21 |
Family
ID=63782592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107106942A TWI683374B (zh) | 2017-03-28 | 2018-03-02 | 晶粒接合裝置及半導體裝置之製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6818608B2 (ko) |
KR (1) | KR102026145B1 (ko) |
CN (1) | CN108666238B (ko) |
TW (1) | TWI683374B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI744849B (zh) * | 2019-04-15 | 2021-11-01 | 日商新川股份有限公司 | 接合裝置以及接合頭的移動量補正方法 |
JP7377655B2 (ja) * | 2019-09-19 | 2023-11-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP7373436B2 (ja) * | 2020-03-09 | 2023-11-02 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP7570258B2 (ja) * | 2021-03-08 | 2024-10-21 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
CN114975152A (zh) * | 2022-05-20 | 2022-08-30 | 深圳市优图科技有限公司 | 一种用于芯片元器件的高精度自动检测和封装一体化装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201642363A (zh) * | 2015-04-02 | 2016-12-01 | Fasford Technology Co Ltd | 接合裝置及接合方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06181229A (ja) * | 1992-12-14 | 1994-06-28 | Sharp Corp | ダイボンド装置 |
JPH07141021A (ja) | 1993-11-16 | 1995-06-02 | Matsushita Electric Ind Co Ltd | 動作制御装置 |
JP2001060795A (ja) | 1999-08-20 | 2001-03-06 | Matsushita Electric Ind Co Ltd | 電子部品実装装置 |
JP3993114B2 (ja) * | 2003-02-06 | 2007-10-17 | 株式会社新川 | ダイボンディング方法及び装置 |
CN100521221C (zh) * | 2006-10-12 | 2009-07-29 | 日月光半导体制造股份有限公司 | 微型摄影模块及其基板 |
JP4851361B2 (ja) * | 2007-02-19 | 2012-01-11 | 富士機械製造株式会社 | 電子回路部品装着装置 |
JP2008172203A (ja) * | 2007-11-19 | 2008-07-24 | Hitachi High-Technologies Corp | 半導体チップの選別装置 |
JP2010040738A (ja) * | 2008-08-05 | 2010-02-18 | Toshiba Corp | 半導体装置の製造装置及び製造方法 |
JP2011021999A (ja) * | 2009-07-15 | 2011-02-03 | Kyodo Design & Planning Corp | 基板検査装置 |
JP5576219B2 (ja) * | 2010-09-09 | 2014-08-20 | 株式会社日立ハイテクインスツルメンツ | ダイボンダおよびダイボンディング方法 |
CN103187331A (zh) * | 2011-12-30 | 2013-07-03 | 鸿富锦精密工业(深圳)有限公司 | 芯片拾取装置以及芯片贴装系统 |
JP6232667B2 (ja) * | 2013-06-25 | 2017-11-22 | ボンドテック株式会社 | 基板接合方法 |
KR101503151B1 (ko) | 2013-08-23 | 2015-03-16 | 세메스 주식회사 | 다이 본딩 장치 및 이를 이용한 다이 본딩 방법 |
JP2015076411A (ja) | 2013-10-04 | 2015-04-20 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ |
KR102238649B1 (ko) * | 2014-09-16 | 2021-04-09 | 삼성전자주식회사 | 반도체 칩 본딩 장치 |
JP6584234B2 (ja) * | 2015-08-31 | 2019-10-02 | ファスフォードテクノロジ株式会社 | ダイボンダ、ボンディング方法および半導体装置の製造方法 |
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2017
- 2017-03-28 JP JP2017062308A patent/JP6818608B2/ja active Active
-
2018
- 2018-02-27 KR KR1020180023692A patent/KR102026145B1/ko active IP Right Grant
- 2018-03-02 TW TW107106942A patent/TWI683374B/zh active
- 2018-03-27 CN CN201810258963.XA patent/CN108666238B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201642363A (zh) * | 2015-04-02 | 2016-12-01 | Fasford Technology Co Ltd | 接合裝置及接合方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108666238A (zh) | 2018-10-16 |
KR20180109678A (ko) | 2018-10-08 |
KR102026145B1 (ko) | 2019-09-30 |
TW201903910A (zh) | 2019-01-16 |
JP2018166136A (ja) | 2018-10-25 |
CN108666238B (zh) | 2022-05-27 |
JP6818608B2 (ja) | 2021-01-20 |
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