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TWI511209B - 傳導凸塊、線環及其形成方法 - Google Patents

傳導凸塊、線環及其形成方法 Download PDF

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Publication number
TWI511209B
TWI511209B TW099110100A TW99110100A TWI511209B TW I511209 B TWI511209 B TW I511209B TW 099110100 A TW099110100 A TW 099110100A TW 99110100 A TW99110100 A TW 99110100A TW I511209 B TWI511209 B TW I511209B
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TW
Taiwan
Prior art keywords
wire bonding
bonding tool
wire
during
ultrasonic energy
Prior art date
Application number
TW099110100A
Other languages
English (en)
Other versions
TW201044479A (en
Inventor
Gary S Gillotti
Original Assignee
Kulicke & Soffa Ind Inc
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Publication date
Application filed by Kulicke & Soffa Ind Inc filed Critical Kulicke & Soffa Ind Inc
Publication of TW201044479A publication Critical patent/TW201044479A/zh
Application granted granted Critical
Publication of TWI511209B publication Critical patent/TWI511209B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B23K3/0623—Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
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    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in subclasses H10F, H10H, H10K or H10N
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
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Description

傳導凸塊、線環及其形成方法 交互參照相關申請案
本申請案主張申請於2009年4月1日的美國臨時申請案第61/165,679號案，其內容併入此文以為參考資料。
發明領域
本發明係關於傳導凸塊及利用傳導凸塊之線環，以及形成傳導凸塊及線環之方法。
 發明背景
在半導體裝置之加工及封裝中，傳導凸塊被形成用於提供電氣互連。例如，此等凸塊可被提供用於：(1)用於覆晶接合應用，(2)用作間隔器導體，(3)線環應用，(4)還有測試應用之測試點。此等傳導凸塊可以不同技術被形成。一項技術是使用引線，諸如在一焊線機器或一接線柱球焊機器上形成傳導凸塊。
許多在一焊線機器或一接線柱球焊機器上形成傳導凸塊的技術在美國專利7,229,906(名稱為「METHOD AND APPARATUS FOR FORMING BUMPS FOR SEMICONDUCTOR INTERCONNECTIONS USING A WIRE BONDING MACHINE」)及美國專利7,188,759(名稱為「METHOD FOR FORMING CONDCTIVE BUMPS AND WIRE LOOPS」)中被揭露，該兩專利全部併入此文以為參考資料。
第1圖繪示在一焊線機器或凸塊機器上形成一傳導凸塊的示範性順序。在步驟1，電弧燒球100a被置於焊線工具102之末端。如該技藝中具有通常知識者所能理解的，在步驟1之前，電弧燒球100a使用一放電結球裝置或類似裝置被形成於引線100的一端，其懸吊在焊線工具102之末端。線夾104也在步驟1被繪示成處於打開位置。如該技藝中具有通常知識者所能理解的，引線100由機器(未示於圖中)上的一引線捲軸提供。引線100從引線捲軸延伸通過線夾104(且通過其他未示於圖中的結構)且通過焊線工具102。
在電弧燒球100a被形成後(在步驟1之前)，引線100(例如，使用一真空控制張力器或類似物)被向上拉，使得電弧燒球100a被置於焊線工具102之末端，如第1圖之步驟1所示。在步驟2，焊線工具102(連同一包括線夾104的焊頭總成的其他元件)被降低，且電弧燒球100a被焊接至焊接位置106(例如半導體晶片的一晶片焊墊106)。如該技藝中具有通常知識者所能理解的，將電弧燒球100a焊接至焊接位置106可利用超音波能量、熱超音波能量、熱壓縮能、XY平台刷磨、其等之組合，及其他一些技術。
電弧燒球100a在步驟2被焊接至焊接位置106之後(此時焊接的電弧燒球可被稱為焊球100b)，線夾104仍是打開的，焊線工具102被升高至一所需高度。此高度可被稱作一分離高度(從第1圖之步驟3可看到焊線工具102被升高使得焊球100b不再位於焊線工具102之末端)。在步驟4，線夾104仍打開，焊線工具102在至少一個水平方向上被移動(例如，沿機器的X軸或Y軸)，以使焊球100b之頂面平滑。此種平滑化提供一傳導凸塊所需的頂面，且亦削弱焊球100b與引線之餘部之間的連接，以協助其間的分離。在步驟5，焊線工具102被升高至另一高度(可稱作線尾高度)，且進而線夾104被閉合。接著在步驟6，焊線工具102被升高以斷開焊球100b(其在此時可被稱作傳導凸塊100c)與引線100之餘部之間的連接。例如，焊線工具102可被升至一EFO高度，該高度是一放電結球裝置在引線100之線尾100d形成一電弧燒球的位置。
使用這些習知技術形成傳導凸塊涉及某些缺陷。例如，在步驟4中的平滑化移動期間，焊球100b與引線之餘部之間的連接被削弱；然而，在某些製程中，該連接可被弱化至連接過早斷開的地步(即，該連接可在閉合線夾104之前，在被提升至步驟5所示線尾高度期間被分離)。如果此一過早分離發生，被提供作為下一電弧燒球之線尾(即，線尾100d)可能是短的(即，一短尾情況)。在試圖避免此一問題時，步驟4中的平滑化可被減少以使得該連接不被過分削弱；然而，此平滑化之減少在產生的凸塊表面方面可能具有有害影響。可能產生的另一問題是一長尾，即線尾的引線太長。此等問題往往導致產量損失及傳導凸塊之間的不一致。
另外，在一習知凸塊上形成第二焊點(例如，諸如在一SSB類型製程中)涉及有關於例如凸塊之順應性及凸塊頂面之實體組態的某些難題。這些難題往往導致不良形成的第二/縫焊及可能的短尾情況。
因此欲提供改良的傳導凸塊及形成該等傳導凸塊之改良方法。
 發明概要
依據本發明之一示範性實施例，提供一種形成一傳導凸塊之方法。該方法包括如下步驟：(1)使用一焊線工具將一電弧燒球焊接至一焊接位置，以形成一焊球；(2)將焊線工具升高至一所需高度，線夾打開，同時鬆出與焊球相連的引線；(3)閉合線夾；(4)將焊線工具降低至一平滑化位置，同時線夾仍閉合；(5)使用焊線工具將焊球之一上表面平滑化，同時線夾仍閉合；及(6)升高焊線工具，同時線夾仍閉合，以將焊球與焊線工具線夾接合的引線分離。
依據本發明之另一示範性實施例，提供一種形成一線環之方法。該方法包括如下步驟：(1)在一焊接位置形成一傳導凸塊，形成該傳導凸塊之步驟是依據本發明的；(2)使用焊線工具將一部份線焊接至另一焊接位置；(3)將一段引線從引線之焊接部份延伸至傳導凸塊；及(4)將該段引線之一端焊接至傳導凸塊。
圖式簡單說明
當下文詳細描述連同附圖一起閱讀時本發明被最佳地理解。依據常例，強調圖示之各種特徵並非成比例的。相反，各種特徵之尺寸為清晰起見被任意擴大或減小。圖式中包括如下圖示：第1圖是繪示形成一傳導凸塊的一習知方法的一系列圖示；第2圖是繪示依據本發明之一示範性實施例一種形成一傳導凸塊之方法的一系列圖示；第3A-B圖是繪示依據第1圖之技術形成之一傳導凸塊之側區塊及頂區塊視圖；第3C-3D圖是繪示依據第2圖之發明的技術形成的一傳導凸塊之側區塊及頂區塊視圖；第4A-4B圖是繪示依據本發明之一示範性實施例，一種形成一線環之方法的圖示。
 較佳實施例之詳細說明
在本發明之某些示範性實施例中，傳導凸塊被形成。一傳導凸塊之上表面例如，使用一焊線工具的一XY平滑化移動被平滑化。在一電弧燒球被沉積及焊接以形成傳導凸塊之後，但在上表面之平滑化之前，焊線工具被升高至一所需高度(例如，一尾高)，同時線夾打開。接著該線夾被閉合，且焊線工具被降低以執行傳導凸塊之上表面平滑化。此製程導致焊線工具頂部與線夾底部之間的一鬆弛段引線。在完成凸塊上表面之平滑化之後，該焊線工具被升高以將傳導凸塊從該引線之餘部分離。在此製程中，該鬆弛段引線此時支援一所需線尾長度，藉此實質上減少短尾之可能性及關聯問題。
因此依據本發明，在一「平滑化」製程期間(見第2圖之步驟6)，線夾仍閉合，這實質上減少(或甚至防止)了引線通過焊線工具產生製程中之一堵塞(這可導致一短尾誤差)的可能性。與習知技術(其中線尾在平滑化完成後被形成)相比，線尾在平滑化發生之前被形成。另一優勢是該線尾往往與習知製程相比更加堅固，因為沒有平滑移動發生來削弱線尾，因此減少了附加誤差之可能性。
第2圖繪示依據本發明，在一焊線機器或一凸塊機器上形成一傳導凸塊的一示範性順序。在步驟1，電弧燒球200a位於焊線工具202之末端。如該技藝中具有通常知識者所能理解的，在步驟1之前，電弧燒球200a利用一放電結球裝置或類似裝置已被形成於引線200之一端，懸吊在焊線工具之末端之下。線夾204也在步驟1被繪示成處於打開位置。
在電弧燒球200a被形成後(在步驟1之前)，引線200(例如，使用一真空控制張力器或類似物)被向上拉，使得電弧燒球200a位於第2圖之步驟1所示焊線工具202之末端。在步驟2，焊線工具202(連同一包括線夾204的焊頭總成的其他元件)被降低，且電弧燒球200a被焊接至焊接位置206(例如半導體晶片的一晶片焊墊206)。如該技藝中具有通常知識者所能理解的，將電弧燒球200a焊接至焊接位置206可利用超音波能量、熱超音波能量、熱壓縮能量、XY平台刷磨、其等之組合，及其他一些技術。
在步驟2焊接電弧燒球200a之後(但在步驟3之前)，其他移動可依需求被完成。例如，一引線之交疊可在步驟3之前被形成於焊球200b上，諸如美國專利第7,229,906號案所述。當然，焊球200b的其他移動及組態被考慮到。
在電弧燒球200a在步驟2被焊接至焊接位置206之後(此時焊接的電弧燒球可被稱為焊球200b)，線夾204仍是打開的，焊線工具202在步驟3被升至一所需高度。此一高度可被稱作一尾高度(從第2圖之步驟3可看到焊線工具之末端在此一高度與焊球200b分離)；然而，要理解不同的高度可被選擇。雖然本發明不受限於此，此高度的示範性範圍是在焊接電弧燒球200b之上5-20密爾之間以及10-20密爾之間。在步驟4，線夾204被閉合。在步驟5，焊線工具202被降低至一所需高度。該高度可被稱作一分離高度(從第2圖之步驟5可看到該工具被降低，使得焊線工具202之末端勉強與焊球200b之上表面接觸)。雖然本發明不受限於此，此一高度的示範性範圍在步驟2的焊線工具202高度之上0.1--2密爾之間以及1-2密爾之間。在步驟5，藉由降低焊線工具202同時線夾閉合，引線200e的一鬆弛段被提供於線夾204底部之下及焊線工具202之上。在步驟6，線夾204仍閉合，焊線工具202在至少一個水平方向上被移動(例如，沿X軸、Y軸、X與Y軸兩者、另一水平方向等等)，以使焊接電弧燒球200a之頂面平滑。此平滑提供一傳導凸塊所需的頂面，且亦削弱焊球與引線之餘部之間的連接，以協助其間的分離。在步驟7，焊線工具202被升高以斷開焊球200b(其在此時可被稱作傳導凸塊200c)與引線200之餘部之間的連接。例如，焊線工具202可被升至一EFO高度，該高度是一放電結球裝置在引線200之線尾200d形成一電弧燒球的位置。與升高焊線工具202在步驟7斷開連接有關，超音波能量或類似物也可被施加以協助引線200e之鬆弛段穿過焊線工具202的末端以提供線尾200d。
在第2圖中，焊線工具202在步驟5與6的高度是相同的；然而，應理解此高度可從一步驟到下一步驟依需要被改變以實現所需平滑化。
藉由在此製程中在拉開引線200以使傳導凸塊200b與引線200之餘部分離之前提供引線200e之鬆弛段，一所需線尾長度200d被提供。因此，短尾(沒有足夠的引線來形成下一個懸吊在焊線工具末端之下的電弧燒球)之可能性實質上被減少。因此，水準平滑化的一理想水平可在第2圖之步驟6被完成，而沒有與過早分離相關之困難的重大風險。
第2圖之步驟6的平滑化可顯著變化。例如，平滑化操作可由如第2圖所示焊線工具2的穿過焊球200b之頂面的一單一水平移動組成。然而，多個移動(例如，來回、不同方向等等)可被提供於平滑化操作中。另外，平滑化移動可以是完全水平的，如第6圖所示，或具有水平以及垂直(例如，向上或向下)分量。因此，平滑化的表面可在一所需給定方向上有斜度。另外，步驟6之平滑化步驟可與步驟5之降低焊線工具202結合成一單一(例如，同時)移動。即，焊線工具202之移動可沿一斜角路徑(例如第2圖所示的向下且向右)，藉此步驟5之降低及步驟6之平滑化在一單一移動中被完成。
因為一傳導凸塊頂面之水平平滑化的理想水平現在可被實現，一更加理想的傳導凸塊被提供。參考第3A-3B圖，提供依據一習知技術形成的傳導凸塊100c的一側區塊視圖及一頂區塊視圖。此等圖示僅是說明性的，且並非意圖說明傳導凸塊之實際形狀。傳導凸塊100c包括被焊接至一焊接位置(諸如第1圖之焊接誒之106)的下表面100c2，及已被平滑化(例如，使用第1圖之步驟4)的一上表面100c1。如可從傳導凸塊100c之俯視圖所能看到的，上表面100c1之面積顯著小於下表面100c2。例如，上表面100c1之表面積可在下表面100c2表面積的50-80%之間。
參考第3C-3D圖，提供依據本發明的一示範性實施例的傳導凸塊200c的一側區塊視圖及一頂區塊視圖。此等圖示僅是說明性的，而並非意圖說明傳導凸塊之實際形狀。傳導凸塊200c包括被焊接至一焊接位置(諸如第2圖中的焊接位置206)的下表面200c2，及已被平滑化(例如，使用第2圖之步驟6)的一上表面200c1。如從傳導凸塊200c之俯視圖所能看到的，上表面200c1佔據與下表面100c2幾乎相同的面積。例如，上表面200c1可以在下表面100c2表面積的80-98%之間，且可能甚至在下表面100c2表面積的90-98%。此在一傳導凸塊上表面與該凸塊之下表面相比的一相對表面積上的增加至少部份歸因於依據本發明而賦予的增加水平平滑化。
本發明可在許多應用中被用以形成傳導凸塊。例如，該等凸塊可與覆晶互連一起使用。另一示範性應用於元件晶圓測試相關聯的傳導凸塊。傳導凸塊的又一示範性使用是作為間隔器。例如，本發明的傳導凸塊可被用作與鬆弛晶片引線焊接一起使用的一間隔器。另外，發明的傳導凸塊可與間隔器縫焊一起使用作為一間隔器(即，SSB焊接)，諸如第4A-4B圖所示。
第4A圖繪示已被形成於焊接位置406a上(例如，半導體晶片406的晶片焊墊406a)的傳導凸塊400c。半導體晶片406由基板408(例如引線架408)支撐。例如，傳導凸塊400c已依據第2圖中描述的方法或依據本發明之另一方法被形成。現在需要將焊接位置408a(例如，引線架408之引線指408a)電連接至傳導凸塊400c。第4B圖繪示提供引線指408a與傳導凸塊400c之間的電氣互連的連續線環410。如該技藝中具有通常知識者所習知的，焊接部份410a(例如，第一焊點410a)被形成於引線指408a之上。進而，引線410b之長度(與第一焊點410a相連)向傳導凸塊400c延伸。進而，引線部份410c被焊接(例如，第二焊點410c被形成為一縫焊)在傳導凸塊400b上。因此，傳導凸塊400b用作線環410的一間隔器。
將引線部份410c(例如，第二焊點410c)焊接至傳導凸塊400c可以是一閉環控制製程。例如，焊線工具的一z位置可被監測，其中在引線部份410c焊接至傳導凸塊400c期間超音波能量在焊線工具到達一預定z位置後被關閉。更具體地，於第二焊點410c在傳導凸塊400c上形成之前，焊線工朝向傳導凸塊400c下降。在焊線工具(包括焊線工具攜有的引線部份410c)與傳導凸塊400c在某一z位置碰撞之後，一參考位置可被建立(該參考位置可以是，例如，碰撞z位置、一在碰撞位置稍上方的z位置、平滑化z位置、超音波能量在第二焊點形成期間被施加的一z位置、在焊線工具與凸塊碰撞之後一預定時間的一z位置)。進而，超音波能量被施加以形成第二焊點410c，即將引線部份410c焊接至傳導凸塊400c(超音波能量可在碰撞前、碰撞之時、焊線工具到達參考位置之時等等被打開)。
進而，超音波能量在焊線工具到達預定z位置之時被關閉(或被減少，例如減少至少50%的能量位準)(例如，有或沒有一預定時間延遲)，使得焊線工具不進入傳導凸塊400c太深。例如，預定z位置可相對於一參考z位置被選擇。即，在焊線工具到達選擇的參考位置後，該z位置被監測(例如，使用一z軸編碼器或其他技術)以判定焊線工具何時到達預定位置。當然，判定預定z位置(及/或參考z位置)的其他技術在本發明範圍內被考慮到。
本文揭露的發明技術特別適用於銅線焊接。銅線具有往往會加重使用習知凸塊技術短尾誤差的可能性的某些物理性質。因此，本發明提供對銅線凸塊及焊接製程的特別優秀之益處。當然，發明的技術也適用於其他類型的引線焊接，包括，例如金、鋁，及鈀塗層銅線焊接。
雖然本發明主要是就一預定順序的某些示範性方法步驟被描述，但是本發明不受限於此。在本發明之範圍內，某些步驟可被重新安排或忽略，或附加步驟可被加入。
雖然本發明在本文中參考特定實施例被說明及描述，本發明不欲被限制於所示細節。相反地，可在請求項範圍與均等範圍內的細節上作各種修改而不違背本發明。
200、410b．．．引線
200a．．．電弧燒球
200b．．．焊球
200c、400c．．．傳導凸塊
200c1．．．上表面
200c2．．．下表面
200d．．．線尾
200e．．．鬆弛線
202．．．焊線工具
204．．．線夾
206、406a、408a．．．焊接位置
406．．．半導體晶片
408．．．基板
410．．．線環
410a．．．第一焊點
410c．．．第二焊點
第1圖是繪示形成一傳導凸塊的一習知方法的一系列圖示；
第2圖是繪示依據本發明之一示範性實施例一種形成一傳導凸塊之方法的一系列圖示；
第3A-B圖是繪示依據第1圖之技術形成之一傳導凸塊之側區塊及頂區塊視圖；
第3C-3D圖是繪示依據第2圖之發明的技術形成的一傳導凸塊之側區塊及頂區塊視圖；
第4A-4B圖是繪示依據本發明之一示範性實施例，一種形成一線環之方法的圖示。
200．．．引線
200a．．．電弧燒球
200b．．．焊球
200c．．．傳導凸塊
200d．．．線尾
200e．．．鬆弛引線
202．．．焊線工具
204．．．線夾
206．．．焊接位置

Claims (51)

  1. 一種形成一傳導凸塊之方法，該方法包含如下步驟：(1)使用一焊線工具將一電弧燒球焊接至一焊接位置，以形成一焊球；(2)將該焊線工具升高至一所需高度，線夾打開，同時鬆出與該焊球相連的引線；(3)閉合該線夾；(4)將該焊線工具降低至一平滑高度，同時該線夾仍閉合；(5)使用該焊線工具平滑化該焊球的一上表面，同時該線夾仍閉合；及(6)升高該焊線工具，同時該線夾仍閉合，以將該焊球與該和焊線工具接合的引線分離。
  2. 如申請專利範圍第1項所述之方法，其中步驟(1)包括使用超音波能量、熱超音波能量、以及熱壓縮能中的至少一個將該電弧燒球焊接至該焊接位置。
  3. 如申請專利範圍第1項所述之方法，其中步驟(1)包括使用(1)超音波能量、熱超音波能量、熱壓縮能中的至少一個，及(2)一線焊接機器的一XY平台的一刷磨移動，將該電弧燒球焊接至該焊接位置。
  4. 如申請專利範圍第1項所述之方法，其中步驟(2)包括將該焊線工具升高至所需高度，該所需高度是一凸塊製程的一尾高。
  5. 如申請專利範圍第1項所述之方法，其中步驟(2)包括將該焊線工具升高至所需高度，該所需高度在該焊球之一上表面之上5-20密爾之間。
  6. 如申請專利範圍第1項所述之方法，其中步驟(4)包括將該焊線工具降低至該平滑化高度，使得該焊線工具之一末端部份與該焊球之一上表面接觸。
  7. 如申請專利範圍第1項所述之方法，其中步驟(4)包括將該焊線工具焊接至該平滑化高度，該平滑化高度比該焊線工具在步驟(1)期間的一高度高0.1-2密爾。
  8. 如申請專利範圍第1項所述之方法，其中步驟(4)包括藉由將該焊線工具降低至該平滑化高度，同時該線夾仍然閉合而在該線夾與該焊線工具之間形成引線之一鬆弛段。
  9. 如申請專利範圍第8項所述之方法，其中步驟(6)包括在將該焊線工具升高通過該焊線工具的引線之該鬆弛段的至少一部份的期間施加超音波能量，以形成一線尾。
  10. 如申請專利範圍第1項所述之方法，其中步驟(6)包括在該升高該焊線工具期間施加超音波能量。
  11. 如申請專利範圍第1項所述之方法，其中步驟(4)及步驟(5)至少部份同時發生。
  12. 如申請專利範圍第1項所述之方法，其中步驟(4)及步驟(5)透過該焊線工具的一向下、及斜角移動發生。
  13. 如申請專利範圍第1項所述之方法，其中在步驟(5)期間，該焊球之上表面藉由該焊線工具的一水平移動被平滑化。
  14. 如申請專利範圍第1項所述之方法，其中在步驟(5)期間，該焊球之上表面藉由該焊線工具之具有一向下及一水平分量的一移動被平滑化。
  15. 如申請專利範圍第1項所述之方法，其中在步驟(5)期間，該焊球之上表面藉由該焊線工具之具有一向上及一水平分量的一移動被平滑化。
  16. 如申請專利範圍第1項所述之方法，其中超音波能量至少在步驟(5)的一部份期間被施加至該焊線工具。
  17. 一種形成一線環之方法，包含如下步驟：(1)在一焊接位置形成一傳導凸塊，形成該傳導凸塊之步驟包括：(a)使用一焊線工具將一電弧燒球焊接至一焊接位置，以形成一焊球；(b)將該焊線工具升高至一所需高度，線夾打開，同時鬆出與該焊球相連的引線；(c)閉合該線夾；(d)當該線夾仍閉合之下，將該焊線工具降低至一平滑化高度；(e)當該線夾仍閉合之下，使用該焊線工具平滑化該焊球的一上表面；及(f)當該線夾仍閉合之下，將該焊線工具升高以將該焊球與該和焊線工具接合的引線分離，因此在該焊接位置上形成一傳導凸塊；(2)使用該焊線工具將引線之一部份焊接至另一焊接位置；(3)將一段引線從引線之該焊接部份延伸至該傳導凸塊；及(4)將該段引線之一端焊接至該傳導凸塊。
  18. 如申請專利範圍第17項所述之方法，其中步驟(3)包括將該段引線由該焊接部份延伸線，使得該段引線與該焊接部份相連。
  19. 如申請專利範圍第17項所述之方法，其中步驟(a)包括使用超音波能量、熱超音波能量、熱壓縮能中的至少一者將該電弧燒球焊接至該焊接位置。
  20. 如申請專利範圍第17項所述之方法，其中步驟(a)包括使用(1)超音波能量、熱超音波能量、熱壓縮能中的至少一者，及(2)一焊線機器的一XY平台的一刷磨移動，將該電弧燒球焊接至該焊接位置。
  21. 如申請專利範圍第17項所述之方法，其中步驟(b)包括將該焊線工具升高至該所需高度，該所需高度是一凸塊製程的一尾高。
  22. 如申請專利範圍第17項所述之方法，其中步驟(b)包括將該焊線工具升高至該所需高度，該所需高度在該焊球之一上表面之上5-20密爾之間。
  23. 如申請專利範圍第17項所述之方法，其中步驟(d)包括將該焊線工具降低至該平滑化高度，使得該焊線工具的一末端部份與該焊球的一上表面接觸。
  24. 如申請專利範圍第17項所述之方法，其中步驟(d)包括將該焊線工具降低至該平滑化高度，該平滑化高度在步驟(a)期間比該焊線工具之一高度高0.1-2密爾。
  25. 如申請專利範圍第17項所述之方法，其中步驟(d)包括當該線夾仍閉合之下，藉由將該焊線工具降低至該平滑化高度而在該線夾與該焊線工具之間形成引線之一鬆弛段。
  26. 如申請專利範圍第25項所述之方法，其中步驟(f)包括在將該焊線工具升高使至少一部分之引線鬆弛段通過該焊線工具期間施加超音波能量以形成一線尾。
  27. 如申請專利範圍第17項所述之方法，其中步驟(f)包括在該焊線工具升高期間施加超音波能量。
  28. 如申請專利範圍第17項所述之方法，其中步驟(d)及(e)至少部份同時發生。
  29. 如申請專利範圍第17項所述之方法，其中步驟(d)及(e)透過該焊線工具的一向下、及斜角移動發生。
  30. 如申請專利範圍第17項所述之方法，其中在步驟(e)期間該焊球之上表面由該焊線工具的一水平移動被平滑化。
  31. 如申請專利範圍第17項所述之方法，其中在步驟(e)期間該焊球之上表面由該焊線工具具有一向下及一水平分量的一移動被平滑化。
  32. 如申請專利範圍第17項所述之方法，其中在步驟(e)期間該焊球之上表面由該焊線工具具有一向上及一水平分量的一移動被平滑化。
  33. 如申請專利範圍第17項所述之方法，其中超音波能量在步驟(e)的至少一部份期間被施加於該焊線工具。
  34. 如申請專利範圍第17項所述之方法，其中在步驟(4)期間，該焊線工具的一z位置被監測，且其中一在步驟(4)的焊接期間被施加的超音波能量在該焊線工具到達一預定z位置後被關閉。
  35. 如申請專利範圍第34項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在步驟(e)期間的一平滑化高度。
  36. 如申請專利範圍第34項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是超音波能量在步驟(4)期間被打開的一初始z位置。
  37. 如申請專利範圍第34項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在(1)該焊線工具與該段引線之末端，及(2)該傳導凸塊之間的碰撞變形後一預定時間的一位置。
  38. 如申請專利範圍第17項所述之方法，其中在步驟(4)期間，該焊線工具的一z位置被監測，且其中在步驟(4)的焊接期間被施加的一超音波能量在該焊線工具於一預定時間延遲後到達一預定z位置時被關閉。
  39. 如申請專利範圍第38項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在步驟(e)期間的一平滑化高度。
  40. 如申請專利範圍第38項所述之方法，其中該預定z位置關於一參考z位置被選擇，該參考z位置是超音波能量在步驟(4)期間被打開的一初始z位置。
  41. 如申請專利範圍第38項所述之方法，其中該預定z位置關於一參考z位置被選擇，該參考z位置是該焊線工具在(1)該焊線工具與引線之該長度之該末端，及(2)該傳導凸塊之間的碰撞變形後的一預定時間的一位置。
  42. 如申請專利範圍第17項所述之方法，其中在步驟(4)期間，該焊線工具的一z位置被監測，且其中一在步驟(4)的焊接期間被施加的超音波能量位準在該焊線工具到達一預定z位置之時被減少。
  43. 如申請專利範圍第42項所述之方法，其中該超音波能量位準在該焊線工具到達一預定z位置後減少至少50%。
  44. 如申請專利範圍第42項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在步驟(e)期間的一平滑化高度。
  45. 如申請專利範圍第42項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是超音波能量在步驟(4)期間被打開的一初始z位置。
  46. 如申請專利範圍第42項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在(1)該焊線工具與該段引線末端，及(2)該傳導凸塊之間的碰撞變形後的一預定時間的一位置。
  47. 如申請專利範圍第17項所述之方法，其中在步驟(4)期間，該焊線工具的一z位置被監測，且其中一在步驟(4)的焊接期間被施加的超音波能量位準在該焊線工具於一預定時間延遲後到達一預定z位置之時被減少。
  48. 如申請專利範圍第47項所述之方法，其中該超音波能量位準在該焊線工具到達一預定z位置後減少至少50%。
  49. 如申請專利範圍第47項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在步驟(e)期間的一平滑化高度。
  50. 如申請專利範圍第47項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是超音波能量在步驟(4)期間被打開的一初始z位置。
  51. 如申請專利範圍第47項所述之方法，其中該預定z位置是相對於一參考z位置被選擇，該參考z位置是該焊線工具在(1)該焊線工具與該段引線末端，及(2)該傳導凸塊之間的碰撞變形後的一預定時間的一位置。
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