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TWI322754B - Method for expelling gas positioned between a substrate and a mold - Google Patents

Method for expelling gas positioned between a substrate and a mold Download PDF

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Publication number
TWI322754B
TWI322754B TW96117879A TW96117879A TWI322754B TW I322754 B TWI322754 B TW I322754B TW 96117879 A TW96117879 A TW 96117879A TW 96117879 A TW96117879 A TW 96117879A TW I322754 B TWI322754 B TW I322754B
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Taiwan
Prior art keywords
substrate
mold assembly
region
chamber
mold
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TW96117879A
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Chinese (zh)
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TW200804053A (en
Inventor
Byung-Jin Choi
Mahadevan Ganapathisubramanian
Yeong-Jun Choi
Mario J Meissl
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Molecular Imprints Inc
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Priority claimed from US11/565,393 external-priority patent/US7691313B2/en
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of TW200804053A publication Critical patent/TW200804053A/en
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Publication of TWI322754B publication Critical patent/TWI322754B/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

1322754 九、發明說明: 【相關申靖案之交互資訊】 本申請案主張美國臨時申請案第6〇/8〇1,265號,申請曰 為2006年5月18日’名稱為,,資料儲存基材用之基材固持裝 5置及方法’,,及美國臨時申請案第60/827,128號,申請曰為 2006年9月27日,名稱為”雙側壓印,,之優先權,以及美國專 利申請案第11/565,393號,申請日為2006年11月30日,名稱 為”用於排出位於基材及鑄模間的氣體之方法”的部分繼續 案之優先權’ s亥部分繼續案是主張美國臨時申請案第 10 60/748,380號,申請曰為2005年12月8曰,名稱為,,與預成形 模板及/或光可固化液體壓印用之方法及裝置”之優先權,且 是美國專利申請案第11/389,731號,申請曰為2〇〇6年3月27 日,名稱為”調整基材形狀用之壓印微影基材製程工具”的 繼續案,該美國專利申請案是美國專利申請案第10/293,224 15 號,目前為美國專利第7,019,819號,申請日為2002年11月 13日,名稱為”調整基材形狀用之夾合系統”的繼續案,以 上所有在此皆結合併入參考。 【明/屬 3 發明領域 20 本發明是槪有關於一種結構的奈米製造。更詳言之, 本發明是有關於一種用於排出位於基材及鑄模間的氣體之 方法及系統。 發明背景 5 奈米製造涉及非常小結構的製造,例如具有屬於奈米 或更小的特徵。奈米製造具有相當大衝擊的其中一領域是 在積體電路的製程。當半導體製程工業持續致力於大量生 產而增加形成於一基材上各單元面積的電路時,奈米製造 日漸重要。奈米製造提供更佳的製程控制而容許所形成結 構的最小特徵尺寸可減小。其他奈米製造已有的發展領域 包含生物科技、光學科技、機械系統等。 一種奈米製造技術的實例通常是以壓印微影技術為 例。例示壓印微影製程在許多公開資料有詳細說明,例如 美國專利申請公開2004/0065976,美國專利申請號 10/264,960 ’名稱為”於一基材上排設特徵以複製具有最小 維度變異性的特徵之方法及模件”;美國專利申請公開 20(M/0065252,美國專利申請號1〇/264,926,名稱為,,在基 材上形成膜層以助於度量衡標準之方法”;及美國專利號碼 6,936,194 ’名稱為”壓印微影製程用之功能圖案材料”,以 上所有專利案皆讓渡予本發明的受讓人。 上述各美國專利申請公開案及美國專利所揭露之基本 主要壓印微影技術包括於一可聚合膜層形成凸版圖案,及 對應於該凸版圖案轉印一圖案於一底層基材内。該基材可 定位於一運動階台上’以達到所要位置而可助於其圖案 化。為此目的,可與該基材間隔設置一模板,使可成形液 體设於該模板與該基材之間。該液體被固化而形成一固化 層,其内記錄有一圖案,其是與該模具與該液體相接觸的 表面之形狀一致。然後該模板再自該固化層分離,以致於 該模板與該基材被間隔開。然後該基材與該固化層再被獅 予加工處理,而將一對應於該固化層内的圖案之凸版圖像 轉印於該基材内。 為此目的,氣體可能會出現於該模板與該基材之間及 在該可成形液體之中,如此可能導致,尤其是該固化層的 圖案扭曲變形、形成於固化層上的特徵低精確度,及固化 層上的殘留層的厚度不一致,這些皆是不佳的。因此,為 此原因’即存在提供一種用於排出位於基材及鑄模間的氣 體之方法及系統的需要。 【項?'明内溶1 圖式簡單說明 第1圖是一種微影系統之簡化側視圖,其具有一與基材 相間隔的圖案裝置,該圖案裝置包括一模板及一鑄模; 第2圖是如第1圖所示該基材的俯仰視圖,該基材具有 内、中及外徑; 第3圖是如第1圖所示該基材耦接於一基材夾合座之側 視圖, 弟4圖是如第3圖所示該基材夾合座之由底向上十面 SI · 園, 第5圖是如第1圖所示該模板以一鑄模與其耦接之俯仰 視圖; 第6圖是如第1圖所示該模板輻接於一模板夹合座之側 視圖; 第7圖是如第6圖所示該模板失合座之由底向上平面 1322754 第8圖是顯示如第丨圖所示定位於該基材的一區域上壓 印材料的液滴陣列之俯仰視圖; 第9圖是如第1圖所示該基材的簡化側視圖,具有一圖 : 5 案層位於其上; _· 第10圖是顯示於第一實施例中,如第1圖所示的基材形 成圖案的方法之流程圖; φ 第11圖是如第1圖所示的圖案裝置已改變形狀之側視 圖; 10 第12圖疋如第11圖所示圖案裝置之側視圖,其與第8圖 所示的壓印材料的液滴的一部分接觸; 第13 -15圖是顯示第8圖所示該等液滴的壓縮情形之俯 仰視圖,其設置如第8圖所示已改變形狀的模板; 第16圖是顯示於第二實施例中,如第丨圖所示的基材的 15 一區域形成圖案的方法之流程圖; φ 第17圖是如第1圖所示的基材已改變形狀之侧視圖; 第18圖是一銷施加一力於第1圖所示的圖案裝置上以 " 改變其形狀之側視圖;及 — 第19圖是如第1圖所示的系統之側視圖,其中有氣體引 20 入於該圖案裝置與該鑄模之間。 【實施方式3 較佳實施例之詳細說明 如第1及2圖所示,是顯示將一凸版圖案形成於一基材 12上之系統10。基材12可具有圓形形狀;然而,於另一實 .f g 施例中,基材12可具有任何幾何峡。於本實例中, 12可具有盤形,其具有一内徑土 η。進-步地,界定於内徑ri及外徑r2之間是—中間半〜 中間半徑r3是位於與内徑ri及外徑⑽質上相等距離。: 如第1圖所示’基材12可與-基材夹合座Μ輕接。如圖 所不基材夾合祕為-真空夾合座,⑼,基材夾合座μ 可為任何夾合座,包括但不限制為,真空式、銷式、槽式, 或電磁式’如美國娜,873,⑽7,名稱為,,壓印微影製程用 之高精密度導向對準及_㈣階台,,所述,在此參考併 入。基材12與基材夹合座14可被支揮於一階台处。進一 步地,基材12、基材夾合座14 ’及階台啊被定位於一基 座(圖中未顯示)上。階台16可具有於第一及第二轴的運 動,該第一及第二軸是相互垂直,即又及丫軸。 15 如第1、3及4圖所示,基材夾合座μ包含第一及第二相 對側18及2 0。一側或緣表面2 2延伸於第一侧丨8與第二側2 〇 之間。第一側18包含一第一凹部20、一第二凹部22,及一 第三凹部24,界定第一、第二、第三及第四相間隔支撐區 域26,28,30,32。第一支撐區域26環繞第二、第三及第四支 20 樓區域,及第一、第二及第三凹部2〇,22,24。第二支撐區域 28環繞第三及第四支撐區域30,32,及第二及第三凹部 22,24。第三支撐區域3〇環繞第四支撐區域32及第三凹部 24。第三凹部24環繞第四支撐區域32。於另一實施例中, 第一、第二、第三及第四支撐區域26,28,30,32可由依從性 材質所形成。第一、第二、第三及第四支撐區域26,28,30,321322754 IX. Invention Description: [Interactive information on the relevant Shenjing case] This application claims US Provisional Application No. 6〇/8〇1,265, and the application is May 18, 2006, the name is, data storage Substrate holding method for substrate 5 and method ', and US Provisional Application No. 60/827,128, filed on September 27, 2006, entitled "Double Side Imprinting, Priority, and U.S. Patent Application Serial No. 11/565,393, filed on Nov. 30, 2006, entitled "Study of the Method for Discharging Gas Between Substrate and Mold", continuation of the continuation case It is the priority of the US Provisional Application No. 10 60/748,380, and the application is 12, December 8, 2005, the name, and the method and apparatus for pre-formed stencil and/or photocurable liquid imprinting. And U.S. Patent Application Serial No. 11/389,731, the application of which is the continuation of the "imprinting lithography substrate process tool for adjusting the shape of the substrate", the US patent The application is US Patent Application No. 10/293,224 15 and is currently Patent No. 7,019,819, filed November 13, 2002, entitled "Adjusting the shape of the substrate with the clamping system" to continue the case, to combine all the euphemistically incorporated by reference. [Ming/genus 3] Field of the Invention 20 The present invention relates to nanofabrication of a structure. More particularly, the present invention relates to a method and system for discharging gas between a substrate and a mold. BACKGROUND OF THE INVENTION 5 Nanofabrication involves the fabrication of very small structures, for example having features that are nano or smaller. One of the areas in which nanofabrication has a considerable impact is in the process of integrated circuits. Nanofabrication is becoming increasingly important as the semiconductor process industry continues to focus on mass production and the addition of circuits that form the cell area on a substrate. Nanomanufacturing provides better process control while allowing the minimum feature size of the resulting structure to be reduced. Other areas of nanofabrication that have been developed include biotechnology, optical technology, and mechanical systems. An example of a nanofabrication technique is typically an imprint lithography technique. The exemplified embossing lithography process is described in detail in a number of published materials, for example, U.S. Patent Application Publication No. 2004/0065,976, entitled "S. A method and a module of the features"; U.S. Patent Application Publication No. 20 (M/0065252, U.S. Patent Application Serial No. 1/264,926, entitled, a method of forming a film layer on a substrate to facilitate the measurement and measurement standard); No. 6,936,194 'the designation of the embossing lithography process", all of which are assigned to the assignee of the present disclosure. The disclosures of the above-identified U.S. Patent Application Publications The imprint lithography technique comprises forming a relief pattern on a polymerizable film layer, and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate can be positioned on a moving stage to achieve a desired position. It can be assisted in patterning. For this purpose, a template can be arranged spaced apart from the substrate to form a formable liquid between the template and the substrate. The liquid is solidified a cured layer having a pattern recorded therein that conforms to the shape of the surface of the mold in contact with the liquid. The template is then separated from the cured layer such that the template is spaced from the substrate. The substrate and the cured layer are further processed by the lion, and a relief image corresponding to the pattern in the cured layer is transferred into the substrate. For this purpose, a gas may appear in the template and the substrate. Between the materials and in the formable liquid, this may result in, in particular, distortion of the pattern of the cured layer, low accuracy of features formed on the cured layer, and inconsistent thickness of the residual layer on the cured layer. It is not good. Therefore, for this reason, there is a need to provide a method and system for discharging a gas between a substrate and a mold. [Item] 'Inner Solution 1 Simple Description FIG. 1 is a A simplified side view of a lithography system having a patterning device spaced from a substrate, the patterning device comprising a template and a mold; and Figure 2 is a elevational view of the substrate as shown in Figure 1 Have The inner, middle and outer diameters; FIG. 3 is a side view of the substrate coupled to a substrate clamping seat as shown in FIG. 1, and the substrate 4 is the substrate clamping seat as shown in FIG. From bottom to top ten-sided SI · garden, Figure 5 is a bottom view of the template coupled with a mold as shown in Figure 1; Figure 6 is the template is attached to a template as shown in Figure 1 Side view of the seat; Figure 7 is the bottom-up plane 1322754 of the template lost seat as shown in Figure 6; Figure 8 is a view showing the embossed material positioned on an area of the substrate as shown in Figure 丨a bottom view of the droplet array; Figure 9 is a simplified side view of the substrate as shown in Figure 1, having a picture: 5 a layer on which it is placed; _· Figure 10 is shown in the first embodiment, A flowchart of a method of forming a pattern on a substrate as shown in Fig. 1; φ Fig. 11 is a side view showing the shape of the pattern device as shown in Fig. 1; 10 Fig. 12, Fig. 11 a side view of the device in contact with a portion of the droplets of the imprint material shown in Fig. 8; Figs. 13-15 are views showing the compression of the droplets shown in Fig. 8. a view, which is provided with a template having a shape changed as shown in Fig. 8; Fig. 16 is a flow chart showing a method of forming a pattern of a region of a substrate as shown in Fig. 8 in the second embodiment; Figure 17 is a side view showing the changed shape of the substrate as shown in Figure 1; Figure 18 is a side view showing a pin applied to the pattern device shown in Fig. 1 to change its shape; - Figure 19 is a side view of the system as shown in Figure 1 with a gas guide 20 between the patterning device and the mold. [Embodiment 3] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT As shown in Figs. 1 and 2, a system 10 for forming a relief pattern on a substrate 12 is shown. Substrate 12 can have a circular shape; however, in another embodiment, substrate 12 can have any geometrical gorge. In the present example, 12 may have a disk shape having an inner diameter η. Further, defined between the inner diameter ri and the outer diameter r2 is - the middle half ~ the intermediate radius r3 is located at an equal distance from the inner diameter ri and the outer diameter (10). : As shown in Fig. 1, the substrate 12 can be lightly attached to the substrate-bonding seat. As shown in the figure, the substrate is sandwiched into a vacuum-clamping seat, (9), and the substrate clamping seat μ can be any clamping seat, including but not limited to, vacuum, pin, slot, or electromagnetic For example, American Na, 873, (10) 7, the name is, high precision guide alignment for embossing lithography process and _ (four) steps, as described herein. The substrate 12 and the substrate holder 14 can be supported at the first stage. Further, the substrate 12, the substrate holder 14' and the stage are positioned on a base (not shown). The stage 16 can have movements of the first and second axes that are perpendicular to each other, i.e., to the x-axis. 15 As shown in Figures 1, 3 and 4, the substrate holder μ includes first and second opposing sides 18 and 20. One side or rim surface 2 2 extends between the first side sill 8 and the second side 2 。. The first side 18 includes a first recess 20, a second recess 22, and a third recess 24 defining first, second, third and fourth spaced support regions 26, 28, 30, 32. The first support region 26 surrounds the second, third and fourth 20th floor regions, and the first, second and third recesses 2, 22, 24. The second support region 28 surrounds the third and fourth support regions 30, 32, and the second and third recesses 22, 24. The third support region 3 turns around the fourth support region 32 and the third recess 24. The third recess 24 surrounds the fourth support region 32. In another embodiment, the first, second, third, and fourth support regions 26, 28, 30, 32 are formed from a compliant material. First, second, third and fourth support areas 26, 28, 30, 32

+C S 可具有圓形形狀;然而,於另〆實施例中’第一、第二、 第三及第四支撐區域26,28,30,32可包含任何所要的幾何形 狀。 基材夾合座14内形成有通道34及36 ’然而,基材夾合 5座14可包括任何數量的通道。通道34使第一及第三凹部2〇 及24與側表面22流體連通,然而’於另一實施例中,必須 瞭解的是通道34可使第一及第三凹部20及24與基材夾合座 14的任何表面流體連通。通道36使第二凹部22與側表面22 流體連通,然而,於另一實施例中,必須瞭解的是通道36 10 可使第二凹部22與基材夾合座14的任何表面流體連通。此 外,通道34是為了助於使第一及第三凹部20及24,及通道 36是為了助於使第二凹部22與一壓力控制系統,例如一泵 系統38流體連通。 泵系統38可包含一或多個泵’以控制近第一、第二及 15第三凹部20、22及24的壓力。為此目的,當基材12與基材 夾合座14耦接時,基材12靜靠於第一、第二、第三及第四 支樓區域26、28、30及32上,蓋住第一、第二及第三凹部 20、22及24。第一凹部2〇與基材12的一部分40a重疊,而界 定一第一腔室42。第二凹部22與基材12的一部分40b重疊, 20而界定一第二腔室44。第三凹部24與基材12的一部分40c重 疊,而界定一第三腔室46。泵系統38可作動以控制第一、 第二及第三腔室42、44及46内的壓力。 如第1及5圖所示,與基材12相間隔設置是一圖案裝置 48。圖案裝置48包括一模板50,其具有一凸台52自其延伸 1322754 向基材12而其上具有一圖案表面54。進一步地,凸台52可 被視為一鑄模52。於另一實施例中,模板50可實質上沒有 鑄模52。形成模板50及/或鑄模52的材質可包括,但不限制 為,熔融石英、石英、矽、有機聚合物、矽氧烷聚合物、 硼酸鹽玻璃、氟碳聚合物、金屬,及硬化藍寶石。如圖所 示,圖案表面54包含由數個相間隔凹部56與凸部58所界定 的特徵。然而,於另一實施例中,圖案表面54可為實質上 呈平滑狀及/或平坦狀。圖案表面54可界定一原始圖案,其 為要形成於基材12上的圖案所需的成形基礎。 15 如第1、6及7圖所示,模板5〇可與一模板夾合座60耦 接,模板夾合座60可為任何失合座,包括但不限制為,真 空式、銷式、槽式,或電磁式,如美國專利6 873 〇87,名 稱為壓印微影製程用之高精密度導向對準及間隙控制階 台所述。模板夾合座60包含第—及第二相對側62,64。一側 或邊緣表面66延伸於第一側62與第二側料之間。第一側62 包含-第-凹部68、-第二凹部7〇,及一第三凹部72,而 界疋相間隔的第-、第二,及第三支樓區域74,76,78。第一 支揮區域74環繞第二及第三切區_ 78,及第一、二及 20 -凹相,7G,72。第—支標區域%環繞第三支撐區域及第 -及一凹。P70,72 °第二支擇區域78環繞第三凹部72。於另 —實施例中’第― ' 第二及第三支標區域74,76,78可由依從 眭材貝所开/成帛、第二及第三支撐區域Αν可為圓 形形狀;然而’於另一實摊备丨占 I她例中,第一、第二及第三支撐 區域74,76,78可為任何所要的幾何形狀。 11 1322754 模板失合座60内形成有通道8〇及82,然而,模板夫合 座6〇可包括任何數量的通道。通道⑽使第__及第三凹部二 及72與第二側64流體連通’然而,於另—實施例中,必須 瞭解的是通道⑽可使第-及第三凹部68及72與模板夾合座、 60的任何表面流體連通^通桃使第二凹㈣與第二驗+C S may have a circular shape; however, in other embodiments the 'first, second, third and fourth support regions 26, 28, 30, 32 may comprise any desired geometry. Channels 34 and 36 are formed in the substrate holder 14 however, the substrate holder 5 can include any number of channels. The passage 34 places the first and third recesses 2 and 24 in fluid communication with the side surface 22, however, in another embodiment, it must be understood that the passage 34 allows the first and third recesses 20 and 24 to be clamped to the substrate. Any surface of the seat 14 is in fluid communication. The passage 36 places the second recess 22 in fluid communication with the side surface 22, however, in another embodiment, it must be understood that the passage 36 10 can cause the second recess 22 to be in fluid communication with any surface of the substrate holder 14. In addition, the passages 34 are for assisting in the first and third recesses 20 and 24, and the passages 36 are for assisting in fluid communication of the second recess 22 with a pressure control system, such as a pump system 38. Pump system 38 may include one or more pumps' to control the pressure of the first, second, and fifth third recesses 20, 22, and 24. For this purpose, when the substrate 12 is coupled to the substrate holder 14, the substrate 12 rests on the first, second, third and fourth branch regions 26, 28, 30 and 32, covering First, second and third recesses 20, 22 and 24. The first recess 2 is overlapped with a portion 40a of the substrate 12 to define a first chamber 42. The second recess 22 overlaps a portion 40b of the substrate 12, 20 defining a second chamber 44. The third recess 24 overlaps a portion 40c of the substrate 12 to define a third chamber 46. Pump system 38 is actuatable to control the pressure within first, second, and third chambers 42, 44, and 46. As shown in Figs. 1 and 5, a pattern device 48 is provided spaced apart from the substrate 12. The patterning device 48 includes a stencil 50 having a projection 52 extending therefrom 1322754 toward the substrate 12 having a patterned surface 54 thereon. Further, the boss 52 can be regarded as a mold 52. In another embodiment, the template 50 can be substantially free of the mold 52. The material forming the template 50 and/or the mold 52 may include, but is not limited to, fused silica, quartz, ruthenium, an organic polymer, a siloxane polymer, a borate glass, a fluorocarbon polymer, a metal, and a hardened sapphire. As shown, the pattern surface 54 includes features defined by a plurality of spaced apart recesses 56 and projections 58. However, in another embodiment, the pattern surface 54 can be substantially smooth and/or flat. The pattern surface 54 can define an original pattern that is the forming basis required for the pattern to be formed on the substrate 12. 15 As shown in Figures 1, 6 and 7, the template 5A can be coupled to a template clamping seat 60, which can be any misaligned seat, including but not limited to, vacuum, pin, Slotted, or electromagnetic, as described in U.S. Patent No. 6,873,87, entitled High Precision Guided Alignment and Gap Control Stage for Embossing lithography processes. The formwork holder 60 includes first and second opposing sides 62,64. A side or edge surface 66 extends between the first side 62 and the second side material. The first side 62 includes a -th recess 72, a second recess 7, and a third recess 72, and the first, second, and third branch regions 74, 76, 78 spaced apart from each other. The first fulcrum region 74 surrounds the second and third cleave regions _78, and the first, second and 20th concave phases, 7G, 72. The first-branch area % surrounds the third support area and the first and the first concave. P70, 72 ° second selected area 78 surrounds third recess 72. In another embodiment, the 'the second' and the second and third subscript regions 74, 76, 78 may be opened/formed by the coffin shell, and the second and third support regions Αν may have a circular shape; In another example, the first, second, and third support regions 74, 76, 78 can be of any desired geometry. 11 1322754 Forms 8〇 and 82 are formed in the template misalignment seat 60, however, the formwork mount 6〇 may include any number of channels. The passage (10) causes the first and third recesses 2 and 72 to be in fluid communication with the second side 64. However, in another embodiment, it must be understood that the passage (10) allows the first and third recesses 68 and 72 to be clamped to the template. Any surface of the seat, 60 is in fluid communication ^ Tongtao makes the second concave (four) and the second test

㈣«’然而’於另―實施例中’必須瞭解的是通獅 可使第二凹部70與模板夾合座6〇的任何表面流體連通。此 外,通道8G是為了助於使第—及第三凹部财72,且通道 10 82是為了助於使第二凹部7〇與—虔力控制系統例如一泵 系統84流體連通。(d) «' However, 'in another embodiment' it is to be understood that the lion can have the second recess 70 in fluid communication with any surface of the formwork holder 6〇. In addition, the passage 8G is for assisting in the first and third recesses 72, and the passages 10 82 are for facilitating fluid communication of the second recess 7 〇 with a force control system, such as a pump system 84.

果系統84可包含-或多個泵,以控制近第一、第二及 第三凹部68’7G’72的壓力。為此目的,#模板5()與模板央合 座60麵接時,模板5〇靜靠於第―、第二及第三支撑區域 74’76及78上’蓋住第-、第二及第三凹部68 7〇及72。第一 15凹部68與模板50的一部分86a重疊,而界定一第一腔室88。 第二凹部70與模板50的一部分86b重疊,而界定一第二腔室 92。第三凹部72與模板50的一部分86c重疊,而界定一第三 腔室96。泵系統84可作動以控制第一、第二及第三腔室 88,92,96内的壓力。又,模板夾合座6〇可耦接於一壓印頭 20 97 ’以助於圖案裝置48的移動。 如第1圖所示,系統10進一步包括一流體分配系統98。 流體分配系統98可與基材12流體連通以在其上沈積聚合材 料100。流體分配系統98内可包括多數個分配單元。需瞭解 的是聚合材料10 0可使用任何習用技術沈積,例如液滴分配 12 法、旋轉塗佈、浸泡式塗佈、化學汽相沈積(CVD)、物理汽 相沈積(PVD)、薄膜沈積、厚膜沈積等。一般而言,聚合 材料100是在鑄模52與基材12之間界定所要容積之前,設置 於基材12上。然而,聚合材料1〇〇可在已獲得所要容積之後 再填滿於該容積。如第8圖所示’聚合材料1〇〇可沈積於基 材12上作為數相間隔的液滴1〇2,而界定一矩陣陣列1〇4。 舉例來說’液滴102的各液滴可具有約卜1〇微微升的單位體 積。液滴102可成任何二維配置狀態配置於基材12上。 如第1及9圖所示,系統10進一步包括一能量108的來源 106 ’其輕接以沿一路徑11〇導引能量1〇8。壓印頭97及階台 ^是構形成可分別配置鑄模52及基材12以使其重疊且設置 於路徑110上。壓印頭97或階台16其中之一或兩者可改變鑄 模52與基材12之間的距離,以界定其間所要的容量以供聚 合材料100填滿。在所要容量填滿聚合材料1〇〇之後,來源 106會產生能量1〇8,例如寬頻紫外光線,其使聚合材料1〇〇 固化且/或交聯’以配合基材12的一表面112與圖案表面54 的形狀,以將一圖案層114界定於基材12上。圖案層114可 包括一殘留層116及數個特徵,其顯示為凸部U8與凹部 120。此製程的控制可以一處理器122進行調節,該處理器 122是與階台16、泵系統38及84、壓印頭97、流體分配系統 98及來源106具資料通訊,在一儲存於一記憶體124内的電 腦可讀程式上操作。 如第1圖所示’系統10進一步包含一銷126耦接於階台 M。銷126可於一與該第一及第二軸垂直之第三軸移動,即 1322754 沿2轴。藉此,銷I26可接觸鑄模&以改變其形狀,以下將 進一步說明。銷126可為習知任何力或位移致動器,尤其包 含氣動、壓電、磁致伸縮、線性,及音圈。於另_實施例 中,銷126可為高解析壓力調節器及清淨系列空氣活塞,其 -* 5中心銷包括-真空源’可排出圖錄置48與基材12的界 面之間的空氣。 如第卜8及9圖所示,如上所提,鑄模52與基材12之間 φ 的距離可改變,以致於可界定所要容積以供聚合材料100填 滿。此外,在固化之後,聚合材料100會配合基材12的表面 10 U2與圖案表面54的形狀,而在基材12上界定圖案層114。 為此目的,於矩陣陣列104的液滴1〇2之間所界定的容積中 存在有氣體,且矩陣陣列104中的液滴1〇2會分佈於基材12 上,以若不能防止時,可避免氣體及/或氣穴陷入於基材12 與鑄模52之間及圖案層ι14中。該等氣體及/或氣穴可為, 15彳一不限制為空氣、氮氣、二氧化碳,及氦氣。於基材12與 • 鑄模52之間及圖案層U4中的氣體及/或氣穴尤其可能導致 形成於圖案層114上的特徵的圖案扭曲變形、形成於圖案層 114上的特徵低精確度,及遍佈圖案層1丨4上的殘留層us的 厚度不致,這些皆是不佳的。為此目的,以下將說明一 2〇種方法及系統,用以若不能防止時,可使氣體及/或氣穴陷 • 於基材丨2與鑄模52之間及圖案層114中達到最低。 如第1及_所示,於第-實施例中,是顯示將基材12 與鱗模52之間的氣體排出的方法。更具體來說,於步驟 200如上所挺,可藉液滴分配法、旋轉塗佈、浸泡式塗佈、 14 1322754 化學汽相沈積(CVD)、物理汽相沈積(PVD)、薄膜沈積、 厚膜沈積等’將聚合材料1〇〇定位於基材12上。於另一實施 例中,聚合材料100可定位於鑄模52上。 如第6、7、10及11圖所示,於步驟202,圖案裝置48的The system 84 can include - or a plurality of pumps to control the pressure of the first, second, and third recesses 68'7G'72. For this purpose, when #template 5() is attached to the template central seating 60, the template 5 is placed on the first, second and third support regions 74'76 and 78 to 'cover the first and second The third recesses 68 7 and 72. The first 15 recess 68 overlaps a portion 86a of the template 50 to define a first chamber 88. The second recess 70 overlaps a portion 86b of the template 50 to define a second chamber 92. The third recess 72 overlaps a portion 86c of the stencil 50 to define a third chamber 96. Pump system 84 is actuatable to control the pressure within first, second, and third chambers 88, 92, 96. Further, the template holder 6 can be coupled to an imprint head 20 97 ' to facilitate movement of the patterning device 48. As shown in FIG. 1, system 10 further includes a fluid dispensing system 98. Fluid dispensing system 98 can be in fluid communication with substrate 12 to deposit polymeric material 100 thereon. A plurality of dispensing units can be included within the fluid dispensing system 98. It is to be understood that the polymeric material 10 can be deposited using any conventional technique, such as droplet dispensing 12, spin coating, immersion coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, Thick film deposition, etc. In general, polymeric material 100 is disposed on substrate 12 prior to defining a desired volume between mold 52 and substrate 12. However, the polymeric material may be filled in the volume after the desired volume has been obtained. As shown in Fig. 8, a polymeric material 1 〇〇 can be deposited on the substrate 12 as a number of spaced apart droplets 1 〇 2 to define a matrix array 1 〇 4. For example, each droplet of droplet 102 can have a unit volume of about 1 〇 picoliter. The droplets 102 can be disposed on the substrate 12 in any two-dimensional configuration. As shown in Figures 1 and 9, system 10 further includes a source 106 of energy 108 that is lightly coupled to direct energy 1 〇 8 along a path 11 。. The embossing head 97 and the step ^ are configured to dispose the mold 52 and the substrate 12 so as to overlap and be disposed on the path 110. One or both of the embossing head 97 or the stage 16 can vary the distance between the mold 52 and the substrate 12 to define the desired capacity therebetween for filling of the polymeric material 100. After the desired volume is filled with the polymeric material, the source 106 produces an energy of 1 〇 8, such as broadband ultraviolet light, which causes the polymeric material to cure and/or crosslink 'to fit a surface 112 of the substrate 12 with The shape of the pattern surface 54 is defined to define a pattern layer 114 on the substrate 12. The pattern layer 114 can include a residual layer 116 and a plurality of features that are shown as protrusions U8 and recesses 120. The control of the process can be adjusted by a processor 122 that communicates with the stage 16, the pump systems 38 and 84, the imprint head 97, the fluid dispensing system 98, and the source 106, in a memory. The computer readable program in the body 124 operates. As shown in Fig. 1, the system 10 further includes a pin 126 coupled to the stage M. The pin 126 is movable on a third axis that is perpendicular to the first and second axes, i.e., 1322754 along the 2 axis. Thereby, the pin I26 can contact the mold & to change its shape, as will be further explained below. Pin 126 can be any conventional force or displacement actuator, including, inter alia, pneumatic, piezoelectric, magnetostrictive, linear, and voice coils. In another embodiment, the pin 126 can be a high resolution pressure regulator and a clean series air piston, the -*5 center pin including -vacuum source' can exhaust air between the interface 48 and the interface of the substrate 12. As shown in Figures 8 and 9, as mentioned above, the distance φ between the mold 52 and the substrate 12 can be varied so that the desired volume can be defined for the polymeric material 100 to fill. In addition, after curing, the polymeric material 100 will conform to the shape of the surface 10 U2 of the substrate 12 and the pattern surface 54 to define a patterned layer 114 on the substrate 12. For this purpose, gas is present in the volume defined between the droplets 1〇2 of the matrix array 104, and the droplets 1〇2 in the matrix array 104 are distributed over the substrate 12, if not prevented, It is avoided that gas and/or air pockets are trapped between the substrate 12 and the mold 52 and in the pattern layer ι14. The gases and/or air pockets may be, without limitation, air, nitrogen, carbon dioxide, and helium. The gas and/or cavitation between the substrate 12 and the mold 52 and in the pattern layer U4 may, in particular, cause distortion of the pattern of features formed on the pattern layer 114, and low precision of features formed on the pattern layer 114, And the thickness of the residual layer us on the pattern layer 1丨4 is not good, and these are not preferable. For this purpose, a method and system will be described below for minimizing gas and/or gas pockets between the substrate 丨2 and the mold 52 and in the pattern layer 114 if not prevented. As shown in the first and third embodiments, in the first embodiment, a method of discharging the gas between the substrate 12 and the scale mold 52 is shown. More specifically, in step 200, as described above, by droplet dispensing method, spin coating, immersion coating, 14 1322754 chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick Film deposition or the like 'positions the polymeric material 1 于 on the substrate 12. In another embodiment, polymeric material 100 can be positioned on mold 52. As shown in Figures 6, 7, 10 and 11, in step 202, the patterning device 48

5形狀可改變。更具體而言,圖案裝置48的形狀可改變,以 致於在基材12的中間半徑η處鑄模52與基材12之間所界定 的距離di ’如第2圖所示’較在禱模52的其他部分處禱模52 與基材12之間所界定的距離小。舉例來說,距離山小於一5 shape can be changed. More specifically, the shape of the patterning device 48 can be varied such that the distance di' defined between the mold 52 and the substrate 12 at the intermediate radius η of the substrate 12 is as shown in Fig. 2 The other portion of the prayer pattern 52 is less defined by the distance between the substrate 52 and the substrate 12. For example, the distance from the mountain is less than one

距離距離4是由鑄模52的一邊緣處所界定。於另一實施 10例中’距離山可由鑄模52的任一所要位置處所界定。圖案 裝置48的形狀可藉控制第一及第三腔室68及72中的壓力來 改變。更具體來說,如上所提,泵系統84可作動以控制第 一及第三腔室68及72中的壓力。為此目的,泵系統84可經 由通道80於第一及第三腔室68及72中形成真空,以致於模 板50的部分86a及86c可弓彎遠離基材12且弓彎向模板夾合 座60 °由於模板50的部分86a及86c遠離基材12之弓彎,模 &50的邹分86b會弓彎向基材12而遠離模板夾合座60。 2〇 如第10、12及13圖所示,於步驟204 ’如上所述參考第 ^ 壤印頭97 (如第1圖所示)或階台16其中之一或兩去 义矩離山,如第11圖所示,以致於鑄模52的一部分可 觸夜滴102的一次部分。如圖所示,在鑄模52的其他部分 接觸液滴102的其餘液滴之前,鑄模52與基材12的中間半徑 ^重疊的部分,如第2圖所示,會先接觸液滴102的一次部 然而,於另一實施例中,鑄模52的任一部分可在轉模 15 1322754 52的其他部分之刖先接觸液滴1〇2。為此目的,却圖所示, 鑄模52可實質上同時接觸與基材12的中間半徑η重疊之所 有液滴102,如第2圖所示。如此會使液滴丨〇2擴散且產生一 連續聚合材料100的液態片體13〇。液態片體13〇的邊緣132 _* 5界定一液氣態界面134,其功能是將容積128内的氣體推向 基材12的邊緣136。液滴102之間的容積128界定氣道,氣體 可經由氣道被推至邊緣136。藉此,液氣態界面134與氣道 φ 結合,可於若不能防止時,減少氣體陷於液態片體13〇内。 如第7、10及14圖所示,於步驟206 ,圖案裝置48的形 10狀可被改變,以使铸模52與基材12之間界定所要的容積, 可供聚合材料100填滿,如上所述參考第1圖所示。更具體 而言,圖案裝置48的形狀的改變可藉由結合控制第一及第 三腔室88及96中的壓力,與壓印頭97 (如第1圖所示)及/ 或階台16因與聚合材料1〇〇及鑄模52接觸所施加的力。更具 15 體而言’如上所提,泵系統84可作動以控制第一及第三腔 φ 室88及96中的壓力。為此目的,泵系統84可經由通道8〇減 少在第一及第三腔室88及96中形成的真空大小,以使與液 滴10 0環繞基材12的中間半徑η (如第2圖所示)的後續次集 合相關連的聚合材料100會擴散成包含於連續液態片體 20 130,如第14圖所示。圖案裝置48的形狀繼續被改變,以致 於鑄模52接著會與其他液滴102接觸,以使與其關連的聚合 材料100會擴散成包含於連續片體130,如第15圖所示。由 圖可見,界面134已移動向邊緣136,因此對其他殘留容積 128内的氣體,如第8圖所示,具有暢通的路徑可供移動。 16 1322754 如此使容積128内的氣體,如第8圖所示,可自鑄模52與基 材12之間面向邊緣136跑出。以此方式,使陷於基材12與鑄 模52之間及圖案層114中之氣體及/或氣穴若不能防止時, 如第9圖所示,可達到最低。於另一實施例中,圖案裝置48 5 的形狀可與減少該距離山的同時改變,如上所提參考第11 圖所示。 如第7及12圖所示,於另一實施例中,為促進圖案裝置 48的形狀的改變,可控制第二腔室92中的壓力。更具體而 言,如上所提,泵系統84可作動以控制第二腔室92中的壓 10 力。為此目的,泵系統84可經由通道82形成第二腔室92中 的壓力,使模板50的部分86c可弓彎向基材12而弓彎遠離模 板夾合座60。又,在第二腔室92中的壓力,可與如上所提, 第一及第三腔室88及96的真空狀態同時形成。 如第1及10圖所示,於步驟208,如上所提參考第1圖所 15 示,之後聚合材料100可被固化且/或交聯,以界定圖案層 114,如第9圖所示。接著,於步驟210,鑄模52可自圖案層 114分離,如第9圖所示。 如第1及16圖所示,是顯示本發明的另一實施例。更具 體而言,於步驟300,類似於上述相對於步驟200,如第10 20 圖所示,聚合材料100可定位於基材12或鑄模52上。 如第3、4、16及17圖所示,於步驟302 ’類似於上述相 對於步驟202,如第10圖所示,圖案裝置48的形狀可被改 變。此外,與圖案裝置48的形狀改變的同時,基材12的形 狀可被改變。更具體而言,基材12的形狀可藉由控制第一 17 / i: 1322754 及第三腔室42及46中的壓力來改變。更具體而言,如上所 提,泵系統38可作動以控制第一及第三腔室42及46中的壓 力。為此目的,泵系統38可經由通道36於第一及第三腔室 42及46中形成真空,以致於基材12的部分40a及40c可弓彎 . 5 遠離基材夾合座14且弓彎向鑄模52,如第17圖所示。由於 基材12的部分40a及40c遠離基材夹合座14之弓彎,基材12 的部分40b會弓彎向鑄模52而遠離基材夾合座14。如第11、 13及16圖所示,於步驟304 ’類似於上述相對於步驟204, 如第10圖所示,壓印頭97或階台16其中之一或兩者可改變 10 距離山,如第11圖所示,以致於鑄模52的一部分可接觸液 滴102與基材12的中間半徑η重疊的一次部分,如第2圖所 示’以實質上同時製造聚合材料100的連續液態片體丨3〇。 如第4、12及16圖所示,於步驟306,類似於上述相對 於步驟206,如第1〇圖所示,圖案裝置48的形狀可被改變, 15以使鑄模52與基材12之間界定所要的容積,可供聚合材料 • 100填滿。此外,與改變圖案裝置48的形狀的同時,可改變 基材12的形狀。更具體而言,如上所提,泵系統38可作動 以控制第—及第三腔室42及46中的壓力。為此目的 ,在如 .- 上所提於步驟2〇4,如第1〇圖所示改變圖案裝置48的形狀的 20同時,泵系統38可經由通道36減少在第一及第三腔室42及 46申形成的真空大小,以使與液滴1〇〇環繞基材12的中間半 徑Γ3 (如第2圖所示)相關連的聚合材料1〇〇會擴散成包含於 連續液態片體130,如第14圖所示。基材q的形狀可與改變 圖案裝置48的形狀的同時進一步被改變,以致於鑄模52接 18 1322754 著會與其他液m〇2接觸,以使與其關連的聚合材料ι〇〇合 擴散成包含於連續片㈣〇,如第15圖所示。容積128㈣ 氣體,如第8圖所示,可以實質上與上提步驟206,如第1〇 圖所示相同的方&,自铸模52與基材12之間面向邊緣说跑 5 出。 • 如第3及4圖所示,為促進基材12的形狀的改變,可控 制第二腔室44中的壓力。更具體而言,如上所提,泵系統 鲁 38可作動以控制第二腔室44中的壓力》為此目的’泉系統 38可經由通道34形成第二腔室料中的壓力,使模板5〇的部 1〇分4〇b可弓彎向鑄模52而弓彎遠離基材夾合座14。又,在第 一腔室44中的壓力,可與如上所提,第一及第三腔室们及 46的真空狀態同時形成。 如第1及10圖所示,於步驟308,如上所提參考第丨圖所 不,之後聚合材料1〇〇可被固化且/或交聯,以界定圖案層 15 U4,如第9圖所示。接著,於步驟310,鑄模52可自圖案層 • 丨14分離,如第9圖所示》 如第6及18圖所示,於另一實施例中,為促進圖案裝置 48的形狀改變,可設置一銷丨26。更具體而言,銷丨26可施 - 加—力於圖案裝置48上,於本實施例中是施加於模板50的 20 货_ 弟二部分86c上。藉此,圖案裝置48可包括上述所要改變的 形狀,且可以上述的任何方法實施。亦可設置銷126以促進 鑄模52與基材12的分離,分別如上所述相對於步驟2〇8及 3〇8,如第1〇及16圖所示。此外,在圖案層114成形之後, 如第9圖所示,銷126可移動遠離圖案裝置48,以致於圖案 19 裝置48可呈實質上平坦狀。銷126可與處理器122連通以致 於銷126可使用力反饋(fwee feedback)技術來決定該力的大The distance 4 is defined by an edge of the mold 52. In another embodiment 10, the distance mountain can be defined by any desired location of the mold 52. The shape of the patterning device 48 can be varied by controlling the pressure in the first and third chambers 68 and 72. More specifically, as mentioned above, pump system 84 is actuatable to control the pressure in first and third chambers 68 and 72. To this end, the pump system 84 can create a vacuum in the first and third chambers 68 and 72 via the passage 80 such that portions 86a and 86c of the template 50 can be bowed away from the substrate 12 and bowed toward the formwork clamping seat. 60 ° Since the portions 86a and 86c of the template 50 are away from the bow of the substrate 12, the portion 86b of the mold & 50 bows toward the substrate 12 away from the template holder 60. 2, as shown in Figures 10, 12 and 13, in step 204', as described above, reference to the first print head 97 (as shown in Figure 1) or one or both of the steps 16 to deviate from the mountain, such as As shown in Fig. 11, so that a portion of the mold 52 can touch the primary portion of the night drop 102. As shown, before the other portions of the mold 52 contact the remaining droplets of the droplets 102, the portion of the mold 52 that overlaps the intermediate radius of the substrate 12, as shown in FIG. 2, will first contact the droplets 102 once. However, in another embodiment, any portion of the mold 52 may contact the droplet 1〇2 prior to the other portions of the mold 15 1322754 52. To this end, as shown, the mold 52 can substantially simultaneously contact all of the droplets 102 that overlap the intermediate radius η of the substrate 12, as shown in FIG. This causes the droplets 丨〇2 to diffuse and produce a liquid sheet 13 of a continuous polymeric material 100. The edge 132 _* 5 of the liquid sheet 13 界定 defines a liquid gaseous interface 134 that functions to push gas within the volume 128 toward the edge 136 of the substrate 12. The volume 128 between the droplets 102 defines an airway through which gas can be pushed to the edge 136. Thereby, the liquid-gas interface 134 is combined with the air passage φ, so that if it cannot be prevented, the gas is trapped in the liquid sheet 13〇. As shown in Figures 7, 10 and 14, at step 206, the shape of the patterning device 48 can be altered to define the desired volume between the mold 52 and the substrate 12 for filling of the polymeric material 100, as above. The reference is shown in Figure 1. More specifically, the change in shape of the patterning device 48 can be controlled by combining the pressures in the first and third chambers 88 and 96 with the stamping head 97 (as shown in FIG. 1) and/or the stage 16 The force applied due to contact with the polymeric material 1 and the mold 52. More preferably, the pump system 84 is actuatable to control the pressure in the first and third chambers φ chambers 88 and 96. To this end, the pump system 84 can reduce the amount of vacuum created in the first and third chambers 88 and 96 via the passage 8 to an intermediate radius η with the droplets 10 around the substrate 12 (as in Figure 2). The subsequent sets of associated polymeric materials 100 shown are diffused into inclusion in the continuous liquid sheet 20 130 as shown in FIG. The shape of the patterning device 48 continues to be altered so that the mold 52 will then contact other droplets 102 such that the polymeric material 100 associated therewith will diffuse into the continuous sheet 130, as shown in FIG. As can be seen, the interface 134 has moved to the edge 136, so that the gas in the other residual volume 128, as shown in Figure 8, has a clear path for movement. 16 1322754 Thus, the gas within the volume 128, as shown in Fig. 8, can run out of the mold 136 between the mold 52 and the substrate 12. In this manner, if the gas and/or air pockets trapped between the substrate 12 and the mold 52 and in the pattern layer 114 are not prevented, as shown in Fig. 9, the lowest can be achieved. In another embodiment, the shape of the patterning device 48 5 can be varied while reducing the distance mountain, as described above with reference to FIG. As shown in Figures 7 and 12, in another embodiment, to promote a change in the shape of the patterning device 48, the pressure in the second chamber 92 can be controlled. More specifically, as mentioned above, the pump system 84 is actuatable to control the pressure in the second chamber 92. To this end, the pump system 84 can form a pressure in the second chamber 92 via the passage 82 such that the portion 86c of the template 50 can be bowed toward the substrate 12 and bowed away from the mold clamping seat 60. Further, the pressure in the second chamber 92 can be formed simultaneously with the vacuum conditions of the first and third chambers 88 and 96 as mentioned above. As shown in Figures 1 and 10, in step 208, as indicated above with reference to Figure 1, the polymeric material 100 can then be cured and/or crosslinked to define the pattern layer 114, as shown in Figure 9. Next, in step 210, the mold 52 can be separated from the pattern layer 114 as shown in FIG. As shown in Figures 1 and 16, another embodiment of the present invention is shown. More specifically, in step 300, similar to the above described with respect to step 200, as shown in FIG. 1020, polymeric material 100 can be positioned on substrate 12 or mold 52. As shown in Figures 3, 4, 16 and 17, in step 302' similar to that described above with respect to step 202, as shown in Fig. 10, the shape of pattern device 48 can be changed. Further, the shape of the substrate 12 can be changed while the shape of the patterning device 48 is changed. More specifically, the shape of the substrate 12 can be varied by controlling the pressure in the first 17 / i: 1322754 and the third chambers 42 and 46. More specifically, as noted above, pump system 38 is actuatable to control the pressure in first and third chambers 42 and 46. To this end, the pump system 38 can create a vacuum in the first and third chambers 42 and 46 via the passage 36 such that portions 40a and 40c of the substrate 12 can be bowed. 5 away from the substrate clamping seat 14 and bow Bend to mold 52 as shown in Figure 17. Since the portions 40a and 40c of the substrate 12 are away from the bow of the substrate holder 14, the portion 40b of the substrate 12 is bowed toward the mold 52 away from the substrate holder 14. As shown in Figures 11, 13 and 16, in step 304 'similar to the above with respect to step 204, as shown in Fig. 10, one or both of the imprint head 97 or the stage 16 can change 10 distance mountains, As shown in Fig. 11, so that a portion of the mold 52 can contact the primary portion of the droplet 102 overlapping the intermediate radius η of the substrate 12, as shown in Fig. 2, 'to continuously manufacture the continuous liquid sheet of the polymeric material 100 at substantially the same time. Body 丨 3 〇. As shown in Figures 4, 12 and 16, at step 306, similar to the above described with respect to step 206, as shown in Figure 1, the shape of the patterning device 48 can be modified to cause the mold 52 and the substrate 12 to be Define the required volume, which can be filled with polymer material • 100. Further, the shape of the substrate 12 can be changed while changing the shape of the patterning device 48. More specifically, as mentioned above, pump system 38 is actuatable to control the pressure in first and third chambers 42 and 46. For this purpose, the pump system 38 can be reduced in the first and third chambers via the passage 36 while at step 2〇4 as described in the above, while changing the shape of the patterning device 48 as shown in FIG. The vacuum is formed by 42 and 46 so that the polymeric material 1 相关 associated with the intermediate radius Γ3 (as shown in Fig. 2) of the droplet 1 around the substrate 12 is diffused into a continuous liquid sheet. 130, as shown in Figure 14. The shape of the substrate q can be further changed while changing the shape of the patterning device 48, so that the mold 52 is connected to the other liquid m〇2 so that the associated polymeric material is diffused into the inclusion. In the continuous film (four), as shown in Figure 15. The volume 128 (d) of gas, as shown in Fig. 8, can be substantially ran out of the edge between the mold 52 and the substrate 12 in substantially the same manner as shown in Fig. 206, as shown in Fig. 1. • As shown in Figures 3 and 4, to promote a change in the shape of the substrate 12, the pressure in the second chamber 44 can be controlled. More specifically, as mentioned above, the pump system Lu 38 can be actuated to control the pressure in the second chamber 44. For this purpose, the spring system 38 can form a pressure in the second chamber via the passage 34 to cause the template 5 The 〇 part 1 〇 4 〇 b can be bowed to the mold 52 and bowed away from the substrate clamping seat 14. Further, the pressure in the first chamber 44 can be formed simultaneously with the vacuum conditions of the first and third chambers and 46 as mentioned above. As shown in FIGS. 1 and 10, in step 308, as described above with reference to the figures, the polymeric material 1 can be cured and/or crosslinked to define the patterned layer 15 U4, as shown in FIG. Show. Next, in step 310, the mold 52 can be separated from the pattern layer 丨14, as shown in FIG. 9 as shown in FIGS. 6 and 18. In another embodiment, in order to facilitate the shape change of the pattern device 48, Set a pin 26. More specifically, the pin 26 can be applied to the patterning device 48, which in this embodiment is applied to the 20-piece portion 86c of the template 50. Thereby, the patterning device 48 can include the shape to be changed as described above, and can be implemented by any of the methods described above. A pin 126 may also be provided to facilitate separation of the mold 52 from the substrate 12, as described above with respect to steps 2〇8 and 3〇8, as shown in Figures 1 and 16. Moreover, after the pattern layer 114 is formed, as shown in Fig. 9, the pin 126 can be moved away from the patterning device 48 such that the pattern 19 device 48 can be substantially flat. The pin 126 can be in communication with the processor 122 such that the pin 126 can use a force feedback technique to determine the force

如第19圖所示’為進一步促進鑄模52與基材12分離, 5可1^由銷126弓丨入氣體148於基材12與鎮模52之間。更具體 而β銷126可包括一通道150,其具有孔洞152與一壓力控 制系統流體連通,例如一泉系統38。於另-實施例中’銷 I26可包括任何數量的孔洞。孔洞152可定位於將氣體148引 入於鑷极52與基材12之間。氣體148施加-力於鑄模52與基 ίο 材 12 物 λ* 將鑄模52以运離基材12的方向推動,且將基材 12以通離碡模52的方向推動。如圖所示,當銷126靠近於模 板5〇時,氣體148即可被引入於鑄模52與基材12之間;然 而,於另一^ 、 貫允例中,氣體148可於銷126在任何位置時被 引入於鑄模52與基材I2之間。As shown in Fig. 19, in order to further promote the separation of the mold 52 from the substrate 12, the gas 148 is drawn between the substrate 12 and the mold 52 by the pin 126. More specifically, the beta pin 126 can include a passage 150 having a bore 152 in fluid communication with a pressure control system, such as a spring system 38. In another embodiment, the pin I26 can include any number of holes. The aperture 152 can be positioned to introduce a gas 148 between the drain 52 and the substrate 12. The gas 148 is applied to force the mold 52 and the substrate 12 λ* to push the mold 52 in the direction away from the substrate 12 and to push the substrate 12 in a direction away from the dies 52. As shown, when the pin 126 is adjacent to the template 5, gas 148 can be introduced between the mold 52 and the substrate 12; however, in another embodiment, the gas 148 can be at the pin 126. It is introduced between the mold 52 and the substrate I2 at any position.

^上述本發明的實施例是用以舉例說明。可對以上的揭 露作許多改變及變更’而仍在本發明的範圍中。因此,本 發明的須不是由上述所限制,而必須參考以下申請 專利範圍’以及其等效的全部範圍所決定》 【陶式簡單說明】 第1圖是一種微影系統之簡化側視圖,其具有一與基材 相門隔的圖案裝置,該圖案裝置包括一模板及一鑄模; 第2圖是如第丨圖所示該基材的俯仰視圖,該基材具有 内、中及外徑; 八 第3圖X如第1圖所示該基材耦接於一基材夾合座之側 20 第4圖是如第3圖所示該基材央_合座之由底向上平面 圖 第5圖是如第1圖所示該模板以一鑄模與其耦接之俯仰 視圖; 第6圖是如第1圖所示該模板耗接於一模板夾合座之側 視圖; 第7圖是如第6圖所示該模板夾合座之由底向上平面 fpt| · 圖, 第8圖是顯示如第1圖所示定位於該基材的一區域上壓 印材料的液滴陣列之俯仰視圖; 第9圖是如第1圖所示該基材的簡化側視圖,具有一圖 案層位於其上; 第10圖是顯示於第一實施例中,如第1圖所示的基材形 成圖案的方法之流程圖; 第11圖是如第1圖所示的圖案裝置已改變形狀之側視 回 · 圖, 第12圖是如第11圖所示圖案裝置之側視圖,其與第8圖 所示的壓印材料的液滴的一部分接觸; 第13-15圖是顯示第8圖所示該等液滴的壓縮情形之俯 仰視圖’其設置如第8圖所示已改變形狀的模板; 第16圖是顯示於第二實施例中,如第1圖所示的基材的 一區域形成圖案的方法之流程圖; 第Π圖是如第1圖所示的基材已改變形狀之側視圖; 1322754 第18圖是一銷施加一力於第1圖所示的圖案裝置上以 改變其形狀之側視圖;及 第19圖是如第1圖所示的系統之側視圖,其中有氣體引 入於該圖案裝置與該鑄模之間。 【主要元件符號說明】The above embodiments of the present invention are for illustration. Many changes and modifications may be made to the above disclosures without departing from the scope of the invention. Therefore, the present invention is not limited to the above, but must be determined with reference to the following claims, as well as the equivalents thereof, and the equivalents thereof. FIG. 1 is a simplified side view of a lithography system. Having a pattern device spaced apart from the substrate, the pattern device comprising a template and a mold; FIG. 2 is a bottom view of the substrate as shown in the second drawing, the substrate having an inner, a middle and an outer diameter; VIII, FIG. 3X, as shown in FIG. 1, the substrate is coupled to the side of a substrate clamping seat. FIG. 4 is a bottom-up plan view of the substrate as shown in FIG. Figure 1 is a bottom view of the template coupled to a mold as shown in Figure 1; Figure 6 is a side view of the template as shown in Figure 1 in a template holder; Figure 7 is the same 6 is a bottom-up plane fpt| of the template holder, and FIG. 8 is a elevational view showing an array of droplets of the imprint material positioned on an area of the substrate as shown in FIG. 1; Figure 9 is a simplified side view of the substrate as shown in Figure 1 with a patterned layer thereon; Figure 10 is A flowchart of a method of forming a pattern of a substrate as shown in FIG. 1 in the first embodiment; FIG. 11 is a side view of the shape of the pattern device shown in FIG. Figure is a side view of the patterning device as shown in Figure 11 in contact with a portion of the droplets of the imprinting material shown in Figure 8; Figures 13-15 are graphs showing the compression of the droplets shown in Figure 8. A tilt view of the situation 'which is set as a template having a changed shape as shown in FIG. 8; FIG. 16 is a flow chart showing a method of forming a pattern of a region of the substrate as shown in FIG. 1 in the second embodiment. The second drawing is a side view of the changed shape of the substrate as shown in Fig. 1; 1322754 Fig. 18 is a side view showing a pin applying a force to the pattern device shown in Fig. 1 to change its shape; Figure 19 is a side elevational view of the system as shown in Figure 1 with gas introduced between the patterning device and the mold. [Main component symbol description]

10…系統 56,58···凹部,凸部 12…級 60…模板夾合座 14…基材炎合座 62,64…第一,二側 16…階台 66···側表面 18,20…第一,二側 68,70,72…第一,二,三凹部 22···側表面 74,76,78···第一,二,三支樓區域 20,22,24…第一,二,三凹部 80,82…通道 26,28…第一,二支撐區域 84…泵系統 30,32…第三,四支樓區域 86^8613,86(:…模板的部分 34,36…通道 88,92,96.··第一,二,三腔室 38…泵系統 97…壓印頭 4〇Μ(^,40ο…基材的部分 98…流體分配系統 42,44,46…第一,二,三腔室 100…聚合材料 48…圖案裴置 102…液滴 50…模板 104…矩陣陣列 52…鑄模(凸台) 106…來源 54…圖案表面 108…能量 22 1322754 110…路徑 130···液態片體 112…表面 132…邊緣 114...圖案層 134…液氣態界面 116…殘留層 136…邊緣 118,120…凸部,凹部 148…氣體 122.··處理器 150…通道 124…記憶體 152···孔洞 126…銷 128.··容積 / έ h •· cS9 ^ 2310...system 56,58···recess, convex part 12...level 60...template clamping seat 14...substrate inflammation seat 62,64...first, two sides 16...stage 66···side surface 18, 20...first, two sides 68,70,72...first, second, and third recesses 22···side surfaces 74,76,78···first, second, and third floor areas 20, 22, 24... One, two, three recesses 80, 82... channels 26, 28... first, two support areas 84... pump systems 30, 32... third, four-story area 86^8613, 86 (: ... part of the template 34, 36 ...channels 88, 92, 96. · first, second, three chambers 38... pump system 97... imprint heads 4 〇Μ (^, 40 ο... part 98 of the substrate... fluid distribution system 42, 44, 46... First, second, three chambers 100...polymeric material 48...patterning device 102...droplet 50...template 104...matrix array 52...mold (boss) 106...source 54...pattern surface 108...energy 22 1322754 110...path 130··· Liquid sheet 112...surface 132...edge 114...pattern layer 134...liquid gas interface 116...residual layer 136...edge 118,120...convex, recess 148...gas 122.·processor 150...channel 124 Memory 1 52···孔洞 126...pin 128.··Volume / έ h •· cS9 ^ 23

Claims (1)

1322754 十、申請專利範圍: 1. 一種用於排出位於基材及鑄模總成間的氣體之方法,該 基材及該鑄模總成進一步具有液體位於其間,該方法包 括以下步驟: 5 定位該鑄模總成及該基材,以使該鑄模總成靠近該 基材,該鑄模總成具有一第一區域、一第二區域,及一 第三區域,該第二區域環繞該第一區域且該第三區域環 繞該第一及第二區域; 改變該鑄模總成的形狀,其藉使該第一及第三區域 10 弓彎遠離該基材,以致於該第二區域弓彎向該基材,以 減少該鑄模總成的第二區域與該基材之間所界定的間 隙;及 將該液體的一次部分與該鑄模總成的第二區域接 觸,以使該氣體可自該基材與該鑄模總成之間排出且該 15 液體可填滿於該鑄模總成與基材之間所界定的容積。 2. 如申請專利範圍第1項所述之方法,其中改變該形狀之步 驟進一步包括形成一於一第一腔室與一第二腔室之間的 第一壓力差,以及形成一於第二腔室與一第三腔室之間 的第二壓力差之步驟,該第一腔室是界定於一耦接於該 20 鑄模總成的夾合座的一部分與該鑄模總成的第一區域之 間,該第二腔室是界定於該夹合座的一部分與該鑄模總 成的第二區域之間,該第三腔室是界定於一耦接於該鑄 模總成的夾合座的一部分與該鑄模總成的第三區域之 間。 24 1322754 3. 如申請專利範圍第1項所述之方法,其中改變該形狀之步 驟進一步包括將一第一腔室及一外加腔室形成真空狀態 之步驟,該第一腔室是界定於一耦接於該鑄模總成的夾 合座的一部分與該鑄模總成的第一區域之間,該外加腔 5 室是界定於耦接於該鑄模總成的該夾合座的一部分與該 鑄模總成的第三區域之間。 4. 如申請專利範圍第1項所述之方法,其中接觸該次部分之 步驟進一步包括接觸該液體與該鑄模總成的第二區域重 疊的區域之步驟。 10 5.如申請專利範圍第1項所述之方法,進一步包含施加一壓 力於該基材與該鑄模總成之間而與該鑄模總成的該第一 區域重疊,以將該鑄模總成自該基材上的該液體分離。 6.如申請專利範圍第1項所述之方法,進一步包括將光化能 衝擊於該液體上以將之固化的步驟。 15 7. —種用於排出位於基材及鑄模總成間的氣體之方法,該 基材及該鑄模總成進一步具有液體位於其間,該方法包 括以下步驟: 定位該鑄模總成及該基材,以使該鑄模總成靠近該 基材,該鑄模總成具有一第一區域、一第二區域,及一 20 第三區域,該第二區域環繞該第一區域且該第三區域環 繞該第一及第二區域; 改變該鑄模總成的形狀,其藉使該第一及第三區域 弓彎遠離該基材,以致於該第二區域弓彎向該基材,以 減少該鑄模總成的第二區域與該基材之間所界定的間 25 1322754 隙,該第一區域是藉施加一力於該鑄模總成面向該基材 的表面上而被弓彎;及 將該液體的一次部分與該鑄模總成的第二區域接 觸,以使該氣體可自該基材與該鑄模總成之間排出且該 5 液體可填滿於該鑄模總成與基材之間所界定的容積。 8.如申請專利範圍第7項所述之方法,其中改變該形狀之步 驟進一步包括形成一於一第一腔室與一第二腔室之間的 第一壓力差,以及形成一於第二腔室與一第三腔室之間 的第二壓力差之步驟,該第一腔室是界定於一耦接於該 10 鑄模總成的夾合座的一部分與該鑄模總成的第一區域之 間,該第二腔室是界定於該夾合座的一部分與該鑄模總 成的第二區域之間,該第三腔室是界定於一耦接於該鑄 模總成的夾合座的一部分與該鑄模總成的第三區域之 間。 15 9.如申請專利範圍第7項所述之方法,其中改變該形狀之步 驟進一步包括將一第一腔室及一外加腔室形成真空狀態 之步驟,該第一腔室是界定於一耦接於該鑄模總成的夾 合座的一部分與該鑄模總成的第一區域之間,該外加腔 室是界定於耦接於該鑄模總成的該夾合座的一部分與該 20 鑄模總成的第三區域之間。 10. 如申請專利範圍第7項所述之方法,其中接觸該次部分 之步驟進一步包括接觸該液體與該鑄模總成的第二區域 重疊的區域之步驟。 11. 如申請專利範圍第7項所述之方法,進一步包含施加一 261322754 X. Patent Application Range: 1. A method for discharging a gas between a substrate and a mold assembly, the substrate and the mold assembly further having a liquid therebetween, the method comprising the steps of: 5 positioning the mold An assembly and the substrate such that the mold assembly is adjacent to the substrate, the mold assembly has a first region, a second region, and a third region, the second region surrounding the first region and the second region a third region surrounding the first and second regions; changing a shape of the mold assembly by bending the first and third regions 10 away from the substrate such that the second region bows toward the substrate To reduce a gap defined between the second region of the mold assembly and the substrate; and to contact a primary portion of the liquid with the second region of the mold assembly such that the gas can be from the substrate The mold assembly is discharged between the mold and the 15 liquid can fill the volume defined between the mold assembly and the substrate. 2. The method of claim 1, wherein the step of changing the shape further comprises forming a first pressure difference between a first chamber and a second chamber, and forming a second a second pressure difference between the chamber and a third chamber, the first chamber being defined by a portion of the clamping seat coupled to the 20 mold assembly and the first region of the mold assembly Between the second chamber is defined between a portion of the clamping seat and the second region of the mold assembly, the third chamber is defined by a clamping seat coupled to the mold assembly. A portion is between the third region of the mold assembly. The method of claim 1, wherein the step of changing the shape further comprises the step of forming a first chamber and an additional chamber into a vacuum state, the first chamber being defined in one a portion of the clamping seat coupled to the mold assembly and a first region of the mold assembly, the outer chamber 5 being defined by a portion of the clamping seat coupled to the mold assembly and the mold Between the third areas of the assembly. 4. The method of claim 1, wherein the step of contacting the sub-portion further comprises the step of contacting a region of the liquid that overlaps the second region of the mold assembly. The method of claim 1, further comprising applying a pressure between the substrate and the mold assembly to overlap the first region of the mold assembly to assemble the mold assembly The liquid is separated from the substrate. 6. The method of claim 1, further comprising the step of impinging actinic energy on the liquid to cure it. 15 7. A method for discharging a gas between a substrate and a mold assembly, the substrate and the mold assembly further having a liquid therebetween, the method comprising the steps of: positioning the mold assembly and the substrate So that the mold assembly is adjacent to the substrate, the mold assembly has a first area, a second area, and a 20 third area, the second area surrounds the first area and the third area surrounds the First and second regions; changing a shape of the mold assembly by bending the first and third regions away from the substrate such that the second region bows toward the substrate to reduce the total mold a gap between the second region and the substrate defined by a gap of 13 1322754, the first region being bowed by applying a force to the surface of the mold assembly facing the substrate; and the liquid a primary portion is in contact with the second region of the mold assembly such that the gas can be discharged between the substrate and the mold assembly and the 5 liquid can be filled between the mold assembly and the substrate. Volume. 8. The method of claim 7, wherein the step of changing the shape further comprises forming a first pressure difference between a first chamber and a second chamber, and forming a second a second pressure difference between the chamber and a third chamber, the first chamber being defined by a portion of the clamping seat coupled to the 10 mold assembly and the first region of the mold assembly Between the second chamber is defined between a portion of the clamping seat and the second region of the mold assembly, the third chamber is defined by a clamping seat coupled to the mold assembly. A portion is between the third region of the mold assembly. The method of claim 7, wherein the step of changing the shape further comprises the step of forming a first chamber and an additional chamber into a vacuum state, the first chamber being defined by a coupling Between a portion of the clamping seat of the mold assembly and a first region of the mold assembly, the additional chamber is defined by a portion of the clamping seat coupled to the mold assembly and the 20 mold total Between the third areas. 10. The method of claim 7, wherein the step of contacting the sub-portion further comprises the step of contacting a region of the liquid that overlaps the second region of the mold assembly. 11. The method of claim 7, further comprising applying a 26 壓力於該基材與賴_成之間模總成的該第 -區域重疊,以將贿模總成自絲材上_液體分離。 12.如申請專利範圍第7項所述之方法,進—牛勺 能衝擊於該液體上以將之固化的步驟。•“化 5 13·-制於排纽於基材及鑄模總成間的氣體之方法,該 基材及該鑄_錢-步具有㈣位於㈣,該方法包 括以下步驟: 10 15 20 定位該鳞模總成及該基材,以使__成靠近該 基材,該鑄模總成具有—第—區域、—第二區域,及一 第三區域’該第二區域環繞該第—區域且該第三區域環 繞該第一及第二區域; 改變該基㈣職,以致於該基材與輯模總成的 第一區域重疊之一區域弓彎向該鑄模總成; 改變該鑄模總成的形狀,其藉使該第一及第三區域 弓彎遠離該基材’以致於該第二區域弓彎向該基材以 減少該鑄模總成的第二區域與該基材與其重疊之該區域 之間所界定的間隙;及 將s亥液體的一次部分與該鑄模總成的第二區域接 觸’以使該氣體可自該基材與該鑄模總成之間排出且該 液·體可填滿於該鑄模總成與基材之間所界定的容積。 14.如申請專利範圍第13項所述之方法,其中改變該基材的 形狀之步驟進一步包括於一耦接於該基材的基材夾合座 的一部分與該基材的該區域之間所界定的一第一容積產 生一壓力之步驟。 27 15.如申請專利範圍第13項所述之方法,其中改變該基材的 形狀之步驟進—步包括於〆耦接於該基材的基材夾合座 的一部分與該基材的該區威之間所界定的一第一容積, 與輕接於該基材的該基材夹合座的一部分與該基材的一 5 外加區域之間所界定的一第二容積之間產生壓力差之步 - 驟,該外加區域是環繞於該區域。 16·如申請專利範圍第13項所述之方法,其中改變該形狀之 φ 步驟進一步包括形成一於〆第一腔室與一第二腔室之間 的第一壓力差,以及形成,於第二腔室與一第三腔室之 1〇 間的第二壓力差之步驟,該第一腔室是界定於一耦接於 »亥鵠模總成的炎合座的一部分與該鑄模總成的第一區域 之間,該第二腔室是界定於該夾合座的一部分與該鑄模 總成的第二區域之間,該第三腔室是界定於一耦接於該 鑄模總成的夾合座的一部分與該鋒模總成的第三區域之 15 間。 • 17·如申請專利範圍第13項所述之方法,其中改變該形狀之 步驟進一步包括將_第一腔室及一外加腔室形成真空狀 態之步驟,該第一腔室是界定於一耦接於該鑄模總成的 • 夾合座的一部分與該鑄模總成的第一區域之間,該外加 2〇 腔室是界定於耦接於該鑄模總成的該夾合座的一部分與 該鱗模總成的第三區域之間。 18.如申請專利範圍第13項所述之方法,其中接觸該次部分 之步驟進一步包括將該液體位於與該基材的該區域重疊 者’與該鑄模總成的第二區域接觸之步驟。 28 1322754 19. 如申請專利範圍第13項所述之方法,進一步包含施加一 壓力於該基材與該鑄模總成之間而與該鑄模總成的該第 一區域重疊,以將該鑄模總成自該基材上的該液體分離。 20. 如申請專利範圍第13項所述之方法,進一步包括將光化 5 能衝擊於該液體上以將之固化的步驟。The pressure overlaps the first region of the mold assembly between the substrate and the laminate to separate the bristle assembly from the wire. 12. The method of claim 7, wherein the step of impinging on the liquid to cure it is carried out. • “Chemical 5 13·- a method of arranging a gas between a substrate and a mold assembly, the substrate and the cast _ money-step having (4) located at (4), the method comprising the following steps: 10 15 20 positioning a scale die assembly and the substrate such that __ is adjacent to the substrate, the mold assembly has a - region, a second region, and a third region surrounding the first region and The third region surrounds the first and second regions; changing the base (four) position such that the substrate overlaps with the first region of the mode assembly bow to the mold assembly; changing the mold assembly a shape that causes the first and third regions to bow away from the substrate such that the second region bows toward the substrate to reduce the overlap of the second region of the mold assembly with the substrate a gap defined between the regions; and contacting a primary portion of the liquid with the second region of the mold assembly to allow the gas to be discharged between the substrate and the mold assembly and the liquid body Filling the volume defined between the mold assembly and the substrate. 14. As claimed in claim 13 The method of claim 1, wherein the step of modifying the shape of the substrate further comprises: creating a first volume defined between a portion of the substrate holder coupled to the substrate and the region of the substrate The method of claim 13, wherein the step of modifying the shape of the substrate further comprises: coupling a part of the substrate clamping seat coupled to the substrate with the substrate; a first volume defined between the regions of the substrate, and a second portion defined between a portion of the substrate clamping seat that is lightly attached to the substrate and a 5 additional region of the substrate The step of creating a pressure difference between the volumes, the applied region is surrounding the region. The method of claim 13, wherein the step of changing the shape of the step further comprises forming a first cavity in the first cavity a first pressure difference between the chamber and a second chamber, and a second pressure difference between the second chamber and a third chamber, the first chamber being defined in one a part of the yoke seat coupled to the 鹄 鹄 mold assembly and the mold Between the first regions, the second chamber is defined between a portion of the clamping seat and a second region of the mold assembly, the third chamber being defined to be coupled to the mold assembly The method of changing the shape further includes the step of the first chamber and the method of the third region of the front mold assembly. An additional chamber forming a vacuum state, the first chamber being defined between a portion of the clamping seat coupled to the mold assembly and a first region of the mold assembly, the additional 2 cavity The chamber is defined between a portion of the clamping seat coupled to the mold assembly and a third region of the scalar assembly. 18. The method of claim 13, wherein contacting the portion The step of further comprising the step of contacting the liquid in a region overlapping the region of the substrate with a second region of the mold assembly. The method of claim 13, further comprising applying a pressure between the substrate and the mold assembly to overlap the first region of the mold assembly to total the mold The liquid from the substrate is separated. 20. The method of claim 13, further comprising the step of effecting actinic 5 on the liquid to cure it.
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