200804053 九、發明說明： 【相關申請案之交互資訊】 本申請案主張美國臨時申請案第6〇/8〇1，265號，申請曰 為2006年5月18日，名稱為”資料儲存基材用之基材固持裝 5置及方法’’，及美國臨時申請案第60/827,128號，申請曰為 2006年9月27曰，名稱為”雙側壓印，，之優先權，以及美國專 利申請案第11/565,393號，申請曰為2〇〇6年11月30曰，名稱 為’用於排出位於基材及鑄模間的氣體之方法，，的部分繼續 案之優先權，該部分繼續案是主張美國臨時申請案第 10 6〇/748,380號，申請曰為2005年12月8曰，名稱為，，與預成形 模板及/或光可固化液體壓印用之方法及裝置，，之優先權，且 是美國專利申請案第11/389,731號，申請曰為2006年3月27 日，名稱為”調整基材形狀用之壓印微影基材製程工具，’的 繼續案’該美國專利申請案是美國專利申請案第10/293，224 15 號’目前為美國專利第7,〇19,819號，申請曰為20()2年11月 13曰’名稱為”調整基材形狀用之夾合系統’，的繼續案，以 上所有在此皆結合併入參考。 t發明所屬技術領域；j 發明領域 20 本發明是槪有關於一種結構的奈米製造。更詳言之， 本發明是有關於一種用於排出位於基材及鑄模間的氣體之 方法及系統。 發明背景 5 200804053 奈米製造涉及非常小結構的製造，例如具有屬於奈米 或更小的特徵。奈米製造具有相當大衝擊的其中一領域是 在積體電路的製程。當半導體製程工業持續致力於大量生 產而增加形成於一基材上各單元面積的電路時，奈米製造 5日漸重要。奈米製造提供更佳的製程控制而容許所形成結 構的最小特徵尺寸可減小。其他奈米製造已有的發展領域 包含生物科技、光學科技、機械系統等。 種奈米製造技術的實例通常是以壓印微影技術為 例。例示壓印微影製程在許多公開資料有詳細說明，例如 10美國專利申請公開2004/0065970，美國專利申請號 10/264,960，名稱為”於一基材上排設特徵以複製具有最小 維度變異性的特徵之方法及模件”；美國專利申請公開 2004/0065252，美國專利申請號1〇/264,926，名稱為，，在基 材上形成膜層以助於度量衡標準之方法”；及美國專利號碼 15 6,936，194,名稱為”壓印微影製程用之功能圖案材料，，，以 上所有專利案皆讓渡予本發明的受讓人。 上述各美國專利申請公開案及美國專利所揭露之基本 主要壓印微影技術包括於一可聚合膜層形成凸版圖案，及 對應於該凸版圖案轉印一圖案於一底層基材内。該基材可 20定位於一運動階台上，以達到所要位置而可助於其圖案 化。為此目的，可與該基材間隔設置一模板，使可成形液 體設於忒模板與該基材之間。該液體被固化而形成一固化 層，其内記錄有一圖案，其是與該模具與該液體相接觸的 表面之形狀一致。然後該模板再自該固化層分離，以致於 6 200804053 该模板與該基材被間隔開。然後该基材與該固化層再被獅 予加工處理，而將一對應於該固化層内的圖案之凸版圖像 轉印於該基材内。 為此目的，氣體可能會出現於該模板與該基材之間及 5在該可成形液體之中，如此可能導致，尤其是該固化層的 、 圖案扭曲變形、形成於固化層上的特徵低精確度，及固化 - 層上的殘留層的厚度不一致，這些皆是不佳的。因此，為 • 此原因，即存在提供一種用於排出位於基材及鑄模間的氣 體之方法及系統的需要。 10 ^明内容】 圖式簡單說明 第1圖疋一種微影系統之簡化側視圖，其具有一與基材 相間隔的圖案裝置，該圖案裝置包括一模板及一鑄模； 第2圖是如第1圖所示該基材的俯仰視圖，該基材具有 15 内、中及外徑； • 第3圖是如第1圖所示該基材耦接於一基材夹合座之側 視圖； " 第4圖是如第3圖所示該基材夾合座之由底向上平面 圖； 2〇 第5圖是如第1圖所示該模板以一鑄模與其耦接之俯仰 視圖； 第6圖是如第1圖所示該模板耦接於一模板夾合座之側 視圖； 第7圖是如第6圖所示該模板夾合座之由底向上平面 7 200804053 第8圖是顯示如第1圖所示定位於該基材的一區域上壓 印材料的液滴陣列之俯仰視圖； 第9圖是如第1圖所示該基材的簡化侧視圖，具有一圖 5案層仅於其上； 第10圖是顯示於第一實施例中，如第丨圖所示的基材形 - 成圖案的方法之流程圖； φ 第11圖是如第1圖所示的圖案裝置已改變形狀之側視 圖； 弟12圖是如第π圖所示圖案裝置之侧視圖，其與第$圖 所不的壓印材料的液滴的一部分接觸； 苐13-15圖是顯示第8圖所示該等液滴的壓縮情形之俯 仰視圖，其設置如第8圖所示已改變形狀的模板； 第16圖是顯示於第二實施例中，如第丨圖所示的基材的 15 區域形成圖案的方法之流程圖； Φ 第17圖是如第1圖所示的基材已改變形狀之側視圖； 第18圖是一銷施加一力於第1圖所示的圖案裝置上以 ^ 改變其形狀之側視圖；及 • 第19圖是如第1圖所示的系統之侧視圖，其中有氣體引 20入於該圖案裝置與該鑄模之間。 【實施方式】 較佳實施例之詳細說明 如第1及2圖所示，是顯示將一凸版圖案形成於一基材 12上之系統1〇。基材12可具有圓形形狀；然而，於另一實 8 200804053 施例中’基材12可具有任何幾何形狀。於本實例中，基材 12可具有盤形’其具有一内徑ri及外徑η，外徑η大於内後 r!。進一步地，界定於内徑Γι及外徑η之間是一中間半徑^， 中間半徑〇是位於與内徑ri及外徑r2實質上相等距離。 5 如弟1圖所示’基材12可與一基材夾合座14轉接。如圖 所示基材夾合座14為一真空夾合座，然而，基材失合座14 可為任何夾合座，包括但不限制為，真空式、銷式、槽式， 或電磁式，如美國專利6,873,087，名稱為，，壓印微影製程用 之高精密度導向對準及間隙控制階台，，所述，在此參考併 10 入。基材12與基材夾合座η可被支撐於一階台16上。進一 步地，基材12、基材夾合座14，及階台16可被定位於—基 座（圖中未顯示）上。階台16可具有於第一及第二輛的運 動’该弟一及弟二轴是相互垂直，即X及y轴。 如弟1、3及4圖所不，基材爽合座14包含第^及第二相 15對側18及20。一侧或緣表面22延伸於第一侧18與第二侧2〇 之間。第一侧18包含一第一凹部20、一第二凹部22，及一 第三凹部24，界定第一、第二、第三及第四相間隔支撐區 域26,28,30,32。苐一支撐區域26環繞第二、第三及第四支 撐區域，及第一、第二及第三凹部2〇,22,24。第二支撐區域 2〇 28 ί哀繞弟二及弟四支撐區域30,32，及第二及第三凹部 22,24。弟二支撐區域30環繞第四支撐區域μ及第三凹部 24。第三凹部24環繞第四支撐區域32。於另一實施例中， 第一、第一、第二及第四支撐區域26,28,30,32可由依從性 材質所形成。第一、第二、第三及第四支撐區域26,28,3〇,32 9 200804053 可具有圓形形狀；然而，於另一實施例中，第一、第二、 第三及第四支撐區域26,28,30,32可包含任何所要的幾何形 狀。 基材夾合座14内形成有通道34及36，然而，基材夾合 5座14可包括任何數量的通道。通道34使第一及第三凹部2〇 及24與侧表面22流體連通，然而，於另一實施例中，必須 瞭解的是通道34可使第一及第三凹部20及24與基材夹合座 14的任何表面流體連通。通道36使第二凹部22與側表面22 流體連通，然而，於另一實施例中，必須瞭解的是通道36 1〇 可使第二凹部22與基材夾合座14的任何表面流體連通。此 外’通道34是為了助於使第一及第三凹部20及24，及通道 36是為了助於使第二凹部22與一壓力控制系統，例如一泵 系統38流體連通。 果糸統3 8可包含一或多個泵，以控制近第一、第二及 第二凹部20、22及24的壓力。為此目的，當基材12與基材 失合座14耦接時，基材12靜靠於第一、第二、第三及第四 支撐區域26、28、30及32上，蓋住第一、第二及第三凹部 20、22及24。第一凹部20與基材12的一部分40a重疊，而界 定一第一腔室42。第二凹部22與基材12的一部分4〇b重疊， 而界疋一第二腔室44。第三凹部24與基材12的一部分4〇c重 ^而界疋一弟二腔至。泵系統38可作動以控制第一、 第二及第三腔室42、44及46内的壓力。 如第1及5圖所示，與基材12相間隔設置是一圖案裝置 48圖案裝置48包括一模板5〇，其具有一凸台52自其延伸 10 200804053 向基材12而其上具有一圖案表面54。進一步地，凸台”可 被視為一鑄模52。於另一實施例中，模板5〇可實質上沒有 鑄模52。形成模板50及/或鑄模52的材質可包括，但不限制 為，熔融石英、石英、矽、有機聚合物、矽氧烷聚合物、 5硼酸鹽玻璃、氟碳聚合物、金屬，及硬化藍寶石。如圖所 、 示，圖案表面54包含由數個相間隔凹部56與凸部58所界定 w 的特徵。然而，於另一實施例中，圖案表面54可為實質上 φ 1平雜及/或平坦狀。圖絲面54可界定-原始圖案，、其 為要形成於基材12上的圖案所需的成形基礎。 1〇 如第1、6及7圖所示，模板5〇可與一模板夹合座_馬 接，模板夾合座60可為任何夾合座，包括但不限制為，真 空式、銷式、槽式，或電磁式，如美國專利6,873,〇87，名 稱為”壓印微影製程用之高精密度導向對準及間隙控制階 台，，所述。模板爽合座60包含第一及第二相對側⑺制。一侧 I5或邊緣表面66延伸於第一側δ2與第二侧64之間。第一觸 • &含一第一凹部68、-第二凹部7〇,及-第三凹部72,而 界定相間隔的第一、第二，及第三支撐區域74,76,78。第-ν 切區域74環繞第二及第三切區域76,78，及第一、二及 ♦ 二凹部68,7(>，72。第二支撐區域76環繞第三支撐區域78及第 2〇二及三凹部7G，72。帛三支撐區域78環繞第三凹部72。於另 只施例巾f、第_及第三支撐區域⑽⑽可由依從 性材質所形成。第一、第二及第三支撐區域74,76,78可為圓 形形狀；然而，於另一實施例中，第-、第二及第三支標 區域74,76/78可為任何所要的幾何形狀。 11 200804053 模板夾合座60内形成有通道80及82，然而，模板夾合 座60可包括任何數量的通道。通道80使第一及第三凹部68 及72與第二侧64流體連通，然而，於另一實施例中，必須 瞭解的是通道80可使第一及第三凹部68及72與模板夾合座 5 6〇的任何表面流體連通。通道82使第二凹部70與第二侧64 々,L體連通，然而，於另一實施例中，必須瞭解的是通道82 ^ 可使第一凹部70與模板夾合座60的任何表面流體連通。此 φ 外，通道80是為了助於使第一及第三凹部68及72，且通道 82是為了助於使第二凹部7〇與一壓力控制系統，例如一泵 10系統84流體連通。 泵系統84可包含一或多個泵，以控制近第一、第二及 第三凹部68,70,72的壓力。為此目的，當模板5〇與模板夾合 座60耦接時，模板5〇靜靠於第一、第二及第三支撐區域 74,76及78上，盍住第一、第二及第三凹部及π。第一 15凹部68與模板50的一部分86a重疊，而界定一第一腔室88。 • 帛二凹部70與模板50的一部分86b重疊，而界定_第二腔室 92。第三凹部72與模板5〇的一部分恤重疊，而界定一第三 、 腔室96。泵系統84可作動以控制第一、第二及第三腔室 一 88,92，％内的壓力。又，模板夾合座60可耦接於一壓印頭 20 97，以助於圖案裝置48的移動。 如第1圖所示，系統10進一步包括-流體分配系統98。 流體分配系統98可與基材12流體連通以在其 料100。流體分配线9S内可包括多數個分配單元。需瞭解 的是聚合材料刚可使用任何習用技術沈積，例如液滴分配 12 200804053 法、旋轉塗佈、浸泡式塗佈、化學汽相沈積(CVD)、物理汽 相沈積（PVD)、薄膜沈積、厚膜沈積等。一般而言，聚合 材料100是在鑄模52與基材U之間界定所要容積之前，設置 於基材12上。然而，聚合材料1〇〇可在已獲得所要容積之後 5 S填滿於該容積。如第8圖所示，聚合材料⑽可沈積於基 材12上作為數相間隔的液滴1〇2，而界定一矩陣陣列1〇4。 ^ 舉例來說，液滴102的各液滴可具有約1-10微微升的單位體 • 積。液滴102可成任何二維配置狀態配置於基材12上。 如第1及9圖所示，系統10進一步包括一能量108的來源 ίο ι〇6,其耦接以沿一路徑110導引能量108。壓印頭97及階台 16是構形成可分別配置鑄模52及基材12以使其重疊且設置 於路徑110上。壓印頭97或階台16其中之一或兩者可改變鑄 核52與基材12之間的距離，以界定其間所要的容量以供聚 合材料100填滿。在所要容量填滿聚合材料1〇〇之後，來源 15 106會產生能量108，例如寬頻紫外光線，其使聚合材料100 • 固化且/或交聯’以配合基材12的一表面112與圖案表面54 的形狀，以將一圖案層114界定於基材12上。圖案層114可 " 包括一殘留層116及數個特徵，其顯示為凸部118與凹部 ^ 120。此製程的控制可以一處理器122進行調節，該處理器 2〇 122是與階台16、泵系統38及84、壓印頭97、流體分配系統 98及來源106具資料通訊，在一儲存於一記憶體124内的電 腦可讀程式上操作。 如第1圖所示，系統1〇進一步包含一銷126耦接於階台 M。銷126可於一與該第一及第二轴垂直之第三軸移動，即 13 200804053 沿Z軸。藉此，銷126可接觸鑄模52以改變其形狀，以下將 進一步說明。銷126可為習知任何力或位移致動器，尤其包 含氣動、壓電、磁致伸縮、線性，及音圈。於另一實施例 中’銷126可為高解析屢力調節器及清淨系列空氣活塞，其 5 —中心銷包括一真空源，可排出圖案裝置48與基材12的界 面之間的空氣。200804053 IX. Invention Description: [Interactive information of related applications] This application claims US Provisional Application No. 6〇/8〇1,265, and the application is May 18, 2006, entitled “Data Storage Substrate The substrate holding device 5 and method '', and US Provisional Application No. 60/827, 128, filed on September 27, 2006, entitled "Double Side Imprinting, Priority, and US Patent Application No. 11/565,393, the application number is November 30, 2000, and the name is 'the method for discharging the gas between the substrate and the mold, and the priority of the continuation case is continued. The case is the United States Provisional Application No. 10 6〇/748,380, and the application is December 8, 2005, the name is, and the pre-formed template and / or photocurable liquid imprinting method and device, Priority is US Patent Application No. 11/389,731, filed on March 27, 2006, entitled "Reducing the Substrate Shape of the Substrate for the Substrate Processing Tool, 'Continuing Case' of the United States The patent application is US Patent Application No. 10/293,224 15' At present, U.S. Patent No. 7, No. 19,819, the application of 曰 is 20 (2) November 13 曰 'the name of the splicing system for adjusting the shape of the substrate', all of which are incorporated herein by reference. reference. FIELD OF THE INVENTION The present invention relates to nanofabrication of a structure. More particularly, the present invention relates to a method and system for discharging gas between a substrate and a mold. BACKGROUND OF THE INVENTION 5 200804053 Nanofabrication involves the fabrication of very small structures, for example having features that are nano or smaller. One of the areas in which nanofabrication has a considerable impact is in the process of integrated circuits. When the semiconductor process industry continues to focus on mass production and increases the number of circuits formed on each substrate area of a substrate, nanofabrication is becoming increasingly important. Nanomanufacturing provides better process control while allowing the minimum feature size of the resulting structure to be reduced. Other areas of nanofabrication that have been developed include biotechnology, optical technology, and mechanical systems. An example of a nanofabrication technique is typically an imprint lithography technique. The exemplified embossing lithography process is described in detail in a number of published materials, for example, U.S. Patent Application Publication No. 2004/0065,970, entitled "U.S. Patent Application Serial No. 10/264,960, entitled "Distributing Features on a Substrate to Replicate with Minimal Dimensional Variability And the method of the present invention. US Patent Application Publication No. 2004/0065252, U.S. Patent Application Serial No. 1/264,926, entitled "Method of Forming a Film Layer on a Substrate to Help Metric Standards"; 15 6,936,194, entitled "Functional pattern material for embossing lithography processes," all of which are assigned to the assignee of the present invention. The basic imprint lithography techniques disclosed in the above-mentioned U.S. Patent Application Publications and U.S. Patent include the formation of a relief pattern on a polymerizable film layer and the transfer of a pattern into an underlying substrate corresponding to the relief pattern. The substrate 20 can be positioned on a moving stage to achieve the desired position to facilitate its patterning. For this purpose, a template may be provided spaced from the substrate such that the formable liquid is disposed between the crucible template and the substrate. The liquid is cured to form a cured layer having a pattern recorded therein that conforms to the shape of the surface of the mold in contact with the liquid. The template is then separated from the cured layer such that 6 200804053 the template is spaced from the substrate. The substrate and the cured layer are then processed by the lion, and a relief image corresponding to the pattern in the cured layer is transferred into the substrate. For this purpose, a gas may be present between the template and the substrate and 5 in the formable liquid, which may result in, in particular, that the cured layer, the pattern is distorted, and the features formed on the cured layer are low. Accuracy, and curing - the thickness of the residual layer on the layer is inconsistent, which is not good. Therefore, for this reason, there is a need to provide a method and system for discharging a gas between a substrate and a mold. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a simplified side view of a lithography system having a pattern device spaced from a substrate, the pattern device including a template and a mold; 1 is a bottom view of the substrate, the substrate has 15 inner, middle and outer diameters; • FIG. 3 is a side view of the substrate coupled to a substrate clamping seat as shown in FIG. 1; " Fig. 4 is a bottom-up plan view of the substrate holder as shown in Fig. 3; Fig. 5 is a bottom view of the template coupled to a mold as shown in Fig. 1; Figure 7 is a side view of the template coupled to a template clamping seat as shown in Figure 1; Figure 7 is a bottom-up plane of the template clamping seat as shown in Figure 6 200804053 Figure 8 is shown as Figure 1 is a top plan view of an array of droplets of imprinted material positioned on a region of the substrate; Figure 9 is a simplified side view of the substrate as shown in Figure 1, having a layer of Figure 5 10 is a flow chart showing a method of forming a substrate-pattern as shown in the first embodiment; φ 11th Is a side view of the pattern device having a changed shape as shown in Fig. 1; Fig. 12 is a side view of the pattern device as shown in Fig. π, which is in contact with a portion of the droplet of the imprint material of Fig. ; Fig. 13-15 is a elevation view showing the compression of the droplets shown in Fig. 8, which is provided with a template having a shape changed as shown in Fig. 8; Fig. 16 is shown in the second embodiment, A flow chart of a method for patterning 15 regions of a substrate as shown in Fig. Φ; Fig. 17 is a side view of the substrate having a changed shape as shown in Fig. 1; Fig. 18 is a pin applying a force A side view of the pattern device shown in Fig. 1 is changed by ^; and Fig. 19 is a side view of the system as shown in Fig. 1, in which a gas guide 20 is inserted into the pattern device and the mold between. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in Figs. 1 and 2, a system 1B for forming a relief pattern on a substrate 12 is shown. The substrate 12 can have a circular shape; however, in another embodiment 8 200804053 the substrate 12 can have any geometric shape. In the present example, the substrate 12 may have a disk shape 'having an inner diameter ri and an outer diameter η, and the outer diameter η is larger than the inner rear r!. Further, defined between the inner diameter Γι and the outer diameter η is an intermediate radius ^, and the intermediate radius 〇 is located at substantially the same distance from the inner diameter ri and the outer diameter r2. 5 As shown in Figure 1, the substrate 12 can be transferred to a substrate holder 14. As shown, the substrate clamping seat 14 is a vacuum clamping seat. However, the substrate holding seat 14 can be any clamping seat, including but not limited to, vacuum, pin, slot, or electromagnetic. , for example, U.S. Patent No. 6,873,087, the disclosure of which is incorporated herein by reference. The substrate 12 and the substrate holder η can be supported on the first stage 16 . Further, the substrate 12, the substrate holder 14, and the stage 16 can be positioned on a base (not shown). The stage 16 can have movements of the first and second vehicles. The first and second axes are perpendicular to each other, i.e., the X and y axes. As shown in the drawings 1, 3 and 4, the substrate cooling seat 14 includes the opposite sides 18 and 20 of the second and second phases 15 . A side or rim surface 22 extends between the first side 18 and the second side 2〇. The first side 18 includes a first recess 20, a second recess 22, and a third recess 24 defining first, second, third and fourth spaced support regions 26, 28, 30, 32. A first support region 26 surrounds the second, third and fourth support regions, and first, second and third recesses 2, 22, 24. The second support area 2〇 28 ί 绕 弟 弟 及 及 及 and the fourth support area 30, 32, and the second and third recesses 22, 24. The second support region 30 surrounds the fourth support region μ and the third recess 24. The third recess 24 surrounds the fourth support region 32. In another embodiment, the first, first, second, and fourth support regions 26, 28, 30, 32 are formed from a compliant material. The first, second, third, and fourth support regions 26, 28, 3, 32 9 200804053 may have a circular shape; however, in another embodiment, the first, second, third, and fourth supports The regions 26, 28, 30, 32 can comprise any desired geometry. Channels 34 and 36 are formed in substrate holder 14, however, substrate holder 5 can include any number of channels. The passage 34 places the first and third recesses 2 and 24 in fluid communication with the side surface 22, however, in another embodiment, it must be understood that the passage 34 allows the first and third recesses 20 and 24 to be clamped to the substrate. Any surface of the seat 14 is in fluid communication. The passage 36 places the second recess 22 in fluid communication with the side surface 22, however, in another embodiment, it must be understood that the passage 36 1〇 can cause the second recess 22 to be in fluid communication with any surface of the substrate holder 14. Further, the passages 34 are for assisting in the first and third recesses 20 and 24, and the passages 36 are for assisting in fluid communication of the second recess 22 with a pressure control system, such as a pump system 38. The system 38 can include one or more pumps to control the pressure of the first, second, and second recesses 20, 22, and 24. For this purpose, when the substrate 12 is coupled to the substrate mismatch seat 14, the substrate 12 rests on the first, second, third and fourth support regions 26, 28, 30 and 32, covering the first 1. Second and third recesses 20, 22 and 24. The first recess 20 overlaps a portion 40a of the substrate 12 to define a first chamber 42. The second recess 22 overlaps a portion 4〇b of the substrate 12 and defines a second chamber 44. The third recess 24 is overlapped with a portion of the substrate 12, and is bounded by a second cavity. Pump system 38 is actuatable to control the pressure within first, second, and third chambers 42, 44, and 46. As shown in FIGS. 1 and 5, a pattern device 48 is disposed spaced apart from the substrate 12. The pattern device 48 includes a template 5 having a boss 52 extending therefrom 10 200804053 to the substrate 12 and having a pattern thereon. Pattern surface 54. Further, the boss " can be regarded as a mold 52. In another embodiment, the template 5 can be substantially free of the mold 52. The material forming the template 50 and/or the mold 52 can include, but is not limited to, melting Quartz, quartz, ruthenium, organic polymer, siloxane polymer, 5 borate glass, fluorocarbon polymer, metal, and hardened sapphire. As shown, the pattern surface 54 comprises a plurality of spaced apart recesses 56 and The features of w are defined by protrusions 58. However, in another embodiment, pattern surface 54 may be substantially φ 1 flat and/or flat. Thread surface 54 may define an original pattern, which is to be formed The forming base required for the pattern on the substrate 12. As shown in Figures 1, 6 and 7, the template 5 can be joined to a template, and the template holder 60 can be any clip. Seats, including but not limited to, vacuum, pin, trough, or electromagnetic, such as U.S. Patent 6,873, 〇87, entitled "High Precision Guided Alignment and Gap Control Stages for Imprinting lithography processes" ,, stated. The template sink 60 includes first and second opposing sides (7). One side I5 or edge surface 66 extends between the first side δ2 and the second side 64. The first contact & includes a first recess 68, a second recess 7〇, and a third recess 72 defining the spaced apart first, second, and third support regions 74, 76, 78. The first-v-cut region 74 surrounds the second and third dicing regions 76, 78, and the first, second, and second recesses 68, 7 (> 72. The second support region 76 surrounds the third support region 78 and the second The second and third recesses 7G, 72. The third support region 78 surrounds the third recess 72. The other embodiment of the towel f, the first and third support regions (10) (10) can be formed by a compliant material. The first, second and The three support regions 74, 76, 78 can be circular in shape; however, in another embodiment, the first, second and third sub-regions 74, 76/78 can be of any desired geometry. 11 200804053 Template Channels 80 and 82 are formed in the clamping seat 60. However, the template clamping seat 60 can include any number of channels. The channel 80 provides first and third recesses 68 and 72 in fluid communication with the second side 64, however, In one embodiment, it must be understood that the passage 80 allows the first and third recesses 68 and 72 to be in fluid communication with any surface of the formwork holder 65. The passage 82 causes the second recess 70 to lie with the second side 64. L body communication, however, in another embodiment, it must be understood that the channel 82 ^ can be used to engage the first recess 70 with the template clamping seat 60 The surface is in fluid communication. Outside of this φ, the passage 80 is to assist in the first and third recesses 68 and 72, and the passage 82 is to assist in the second recess 7 and a pressure control system, such as a pump 10 system 84. The pump system 84 can include one or more pumps to control the pressure of the first, second, and third recesses 68, 70, 72. For this purpose, when the template 5 is coupled to the template clamp 60 When the template 5 is resting on the first, second and third support regions 74, 76 and 78, the first, second and third recesses and π are clamped. The first 15 recess 68 and a portion 86a of the template 50 Overlap, defining a first chamber 88. • The second recess 70 overlaps a portion 86b of the template 50 to define a second chamber 92. The third recess 72 overlaps a portion of the template of the template 5〇, defining a first 3. The chamber 96. The pump system 84 is actuatable to control the pressure in the first, second and third chambers 88, 92, %. Further, the template clamping seat 60 can be coupled to an imprint head 20 97. To facilitate movement of the patterning device 48. As shown in Figure 1, the system 10 further includes a fluid dispensing system 98. The fluid dispensing system 98 The substrate 12 is in fluid communication to include a plurality of dispensing units within the fluid distribution line 9S. It is to be understood that the polymeric material can be deposited using any conventional technique, such as droplet dispensing 12 200804053, spin coating, Immersion coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, etc. In general, polymeric material 100 is prior to defining the desired volume between mold 52 and substrate U. It is disposed on the substrate 12. However, the polymeric material 1 填 can fill the volume 5 S after the desired volume has been obtained. As shown in Fig. 8, the polymeric material (10) can be deposited on the substrate 12 as a number of spaced apart droplets 1〇2 to define a matrix array 1〇4. ^ For example, each droplet of droplet 102 can have a unit volume of about 1-10 picoliters. The droplets 102 can be disposed on the substrate 12 in any two-dimensional configuration. As shown in FIGS. 1 and 9, system 10 further includes a source of energy 108, ίοι6, coupled to direct energy 108 along a path 110. The stamping head 97 and the step 16 are configured to dispose the mold 52 and the substrate 12 so as to overlap and be disposed on the path 110. One or both of the embossing head 97 or the stage 16 can vary the distance between the casting core 52 and the substrate 12 to define the desired capacity therebetween for filling of the polymeric material 100. After the desired volume fills the polymeric material, source 15 106 produces energy 108, such as broadband ultraviolet light, which causes polymeric material 100 to cure and/or crosslink 'to fit a surface 112 of the substrate 12 to the patterned surface. The shape of 54 is to define a patterned layer 114 on the substrate 12. The pattern layer 114 can include a residual layer 116 and a plurality of features, which are shown as protrusions 118 and recesses ^120. The control of the process can be adjusted by a processor 122 that communicates with the stage 16, the pump systems 38 and 84, the imprint head 97, the fluid dispensing system 98, and the source 106, in a A computer readable program in a memory 124 operates. As shown in FIG. 1, the system 1 further includes a pin 126 coupled to the stage M. The pin 126 is movable on a third axis that is perpendicular to the first and second axes, i.e., 13 200804053 along the Z axis. Thereby, the pin 126 can contact the mold 52 to change its shape, as will be further explained below. Pin 126 can be any conventional force or displacement actuator, including, inter alia, pneumatic, piezoelectric, magnetostrictive, linear, and voice coils. In another embodiment, the pin 126 can be a high resolution relay force regulator and a clean series air piston, the center pin of which includes a vacuum source that can vent air between the patterning device 48 and the interface of the substrate 12.
、 如第1、8及9圖所示，如上所提，鑄模52與基材12之間 的距離可改變，以致於可界定所要容積以供聚合材料1〇〇填 滿此外在固化之後，聚合材料100會配合基材12的表面 10 與圖案表面54的形狀，而在基材12上界定圖案層114。 為此目的，於矩陣陣列104的液滴1〇2之間所界定的容積中 存在有氣體，且矩陣陣列104中的液滴1〇2會分佈於基材12 上，以若不論止時，可避免氣體及/或氣穴陷人於基材12 與鑄模52之間及圖案層114中。該等氣體及/或氣穴可為， 4不限制為工氣、氮氣、二氧化碳，及氦氣。於基材12與 禱模52之間及圖案層114中的氣體及/或氣穴尤其可能導致 形成於圖案層114上的特徵的圖案扭曲變形、形成於圖案層 上的4寸徵低精確度，及遍佈圖案層114上的殘留層的 厚度不致，飞些皆是不佳的。為此目的，以下將說明一 法及系、4用以右不能防止時，可使氣體及/或氣穴陷 於基和與鑄模52之間及圖案層114中達到最低。 如第1及10圖所不’於第_實施例中，是顯示將基材以 與鑄模52之間的氣體排出的方法。更具體來說，於步驟 綱，如上所提，可軸、旋難佈、浸泡式塗佈、 14 200804053 化學汽相沈積(CVD)、物理汽相沈積（pvD)、薄膜沈積、 厚膜沈積等，將聚合材料100定位於基材12上。於另一實施 例中，聚合材料1〇〇可定位於鑄模52上。 如第6、7、10及11圖所示，於步驟2〇2，圖案裝置48的 5形狀可改變。更具體而言，圖案裝置48的形狀可改變，以 、 致於在基材12的中間半控η處禱模52與基材12之間所界定 • 的距離山，如第2圖所示，較在鑄模52的其他部分處轉模52 ^ 與基材12之間所界定的距離小。舉例來說，距離dl小於一 距離屯’距離4是由鑄模52的一邊緣處所界定。於另一實施 10例中，距離山可由鑄模52的任一所要位置處所界定。圖案 裝置48的形狀可藉控制第一及第三腔室68及72中的壓力來 改變。更具體來說，如上所提，泵系統84可作動以控制第 及第三腔室68及72中的壓力。為此目的，泵系統84可經 由通道80於第一及第三腔室68及72中形成真空，以致於模 15板50的部分86a及86c可弓彎遠離基材12且弓彎向模板夾合 φ 座60。由於模板50的部分86a及86c遠離基材12之弓彎，模 板50的部分86b會弓彎向基材12而遠離模板夾合座6〇。 - 如第1〇、12及13圖所示，於步驟204,如上所述參考第 . 1圖’壓印頭97 (如第1圖所示）或階台16其中之一或兩者 20可改變距離山，如第11圖所示，以致於鑄模52的一部分可 接觸液滴102的一次部分。如圖所示，在鑄模52的其他部分 接觸液滴102的其餘液滴之前，鑄模52與基材12的中間半徑 Γ3重疊的部分，如第2圖所示，會先接觸液滴1〇2的一次部 刀。然而，於另一實施例中，鑄模52的任一部分可在禱模 15 200804053 52的其他部分之前先接觸液滴繼。為此目的，如圖所示， 鑄模52可實質上同時接觸與基材12的中間半徑⑽疊之所 有液，商102，如第2圖所示。如此會使液滴1〇2擴散且產生一 連續聚合材料議的液態片體13〇。液態片體⑽的邊緣132 5界定-液氣態界面134，其功能是將容積128内的氣體推向 基材12的邊緣136。液滴搬之間的容積128界定氣道，氣體 可經由氣錢推至雜136。藉此，㈣態界面134與氣道 結合，可於若不能防止時，減少氣體陷於液態片體内。 如第7、10及14圖所示，於步驟2〇6，圖案裝置佔的形 H)狀可被改變，以使鑄模52與基材12之間界定所要的容積， 可供聚合材料100填滿，如上所述參考第丨圖所示。更具體 而δ，圖案裝置48的形狀的改變可藉由結合控制第一及第 二腔至88及96中的壓力，與壓印頭97 (如第1圖所示）及/ 或階台16因與聚合材料1〇〇及鑄模52接觸所施加的力。更具 15體而言，如上所提，泵系統84可作動以控制第一及第三腔 室88及96中的壓力。為此目的，泵系統84可經由通道8〇減 少在第一及第三腔室88及96中形成的真空大小，以使與液 滴100¼繞基材12的中間半徑η (如第2圖所示）的後續次隼 合相關連的聚合材料100會擴散成包含於連續液態片體 20 130，如第14圖所示。圖案裝置48的形狀繼續被改變，以致 於鑄模52接著會與其他液滴102接觸，以使與其關連的聚合 材料100會擴散成包含於連續片體130，如第15圖所示。由 圖可見，界面134已移動向邊緣136，因此對其他殘留容積 128内的氣體，如第8圖所示，具有暢通的路徑可供移動。 16 200804053 H積128_氣體’如第8圖所示，可自鑄模52與基 扣之間面向邊緣136跑出。以此方式，使陷於基材12與^ 1之間及圖案層114中之氣體及/或氣穴若不能防止時， 如第W所不’可達到最低。於另一實施例中，圖案裝置48 的心狀可與減少该距離山的同時改變，如上所提參考第^ 圖所示。 /第及12圖所不，於另一實施例中，為促進圖案裝置 48的形狀的改變， _ 』匕制弟二腔室92中的壓力。更具體而 口上所提，聚系統84可作動以控制第二腔室92中的壓 10力A此目的，泵系統84可經由通道卿成第二腔室辦 的壓力’使核板50的部分86c可弓彎向基材12而弓彎遠離模 板夾〇座60又’在第二腔室92中的壓力，可與如上所提， 第-及第三腔室88及96的真空狀態同時形成。 如第1及10圖所不’於步驟2〇8，如上所提參考第工圖所 15示，之後聚合材料⑽可被固化且/或交聯，以界定圖案層 114，如第9圖所示。接著，於步驟謂，鑄模52可自圖案層 114分離，如第9圖所示。 9 如第1及16圖所示，是顯示本發明的另_實施例。更呈 體而言，於步驟300，類似於上述相對於步驟綱，如㈣ 20圖所示，聚合材料1〇〇可定位於基材12或鑄模％上。 如第3、4、16及17圖所示，於步驟3〇2,類似於上述相 對於步驟搬，如第_所示，圖案裝置48的形狀可被改 變。此外，與圖案裝置48的形狀改變的同時，基材12的形 狀可被改變。更具體而言，基材12的形狀可藉由控制第_ 17 200804053 及第三腔室42及46中力來改變。更具體而言，如上所 提，泵系統38可作動以控制第一及第三腔室42及46中的壓 力。為此目的，泵系統38可經由通道36於第一及第三腔室 42及46中$成真空’以致於基材12的部分術及撕可弓彎 5遠離基材夹合座14且弓彎向鑄模52,如第17圖所示。由於 • ㈣12的部分4Ga及基材夾合座14之弓f，基材12 . 的部分攝會弓彎向鑄模52而遠離基材夾合座14。如第u、 φ 13及16圖所示，於步驟304，類似於上述相對於步驟204， 如第10圖所示，壓印頭97或階台16其中之一或兩者可改變 10距離山，如第u圖所示，以致於鑄模52的一部分可接觸液 滴1〇2與基材I2的中間半徑Q重疊的一次部分，如第2圖所 示以貝貝上同日寸製造聚合材料100的連續液態片體13〇。 如第4、12及16圖所示，於步驟3Ό6，類似於上述相對 於步驟206，如第1〇圖所示，圖案裝置48的形狀可被改變， 15 α使禱;^52與基材12之間界定所要的容積，可供聚合材料 • 1〇0填滿。此外，與改變圖案裝置48的形狀的同時，可改變 基材12的形狀。更具體而言，如上所提，泵系統％可作動 ‘ 以控彻—及第三腔室42及46巾的壓力。為此目的，在如 上所提於步驟204，如第10圖所示改變圖案裝置48的形狀的 20同時，泵系統％可經由通道36減少在第一及第三腔室42及 46中形成的真空大小，以使與液滴1〇〇環繞基材12的中間半 徑h (如第2圖所示）相關連的聚合材料1〇〇會擴散成包含於 連績液態片體130，如第14圖所示。基材12的形狀可與改變 圖案裝置48的形狀的同時進一步被改變，以致於鑄模兄接 18 200804053 著會與其錄_2接觸，以使與其關連的聚合材料刚會 擴散成包含於連續片體13〇，如第15圖所示1積128内二 氣體，如第8圖所示，可以實質上與上提步驟寫，如第1〇 圖所示相同的方法，自鑄模S2與基材u之間面向邊緣136跑 5出。 如第3及4圖所示，為促進基材12的形狀的改變，可控 制第二腔室44中的麼力。更具體而言，如上所提，泵线 38可作動以控制第二腔室44中的壓力。為此目的，泉系统 38可經由通道34形成第二腔室餅的壓力，使模板灣部 刀40b可弓.胃向鑄模52而弓彎遠離基材夾合座μ。又，在第 二腔室44中的壓力’可與如上所提，第—及第三腔室似 46的真空狀態同時形成。 —如第1及10圖所示，於步驟3〇8,如上所提參考彰圖所 1不，之後聚合材料1GG可被固化且域交聯，以界定圖案層 5 114 ’如第9圖所示。接著，於步驟训，禱模52可自圖案層 114分離’如第9圖所示。 如第6及18圖所不，於另一實施例中，為促進圖案裝置 48的形狀改變，可設置-銷126。更具體而言，銷126可施 20 1 口二力於圖案裝置48上，於本實施例中是施加於模板50的 第一科86c上。藉此，圖案裝置48可包括上述所要改變的 形狀且可以上述的任何方法實施。亦可言史置銷⑶以促進 鑄权52與基材I2的分離，分別如上所述相對於步驟遞及 雇―如第1〇及16圖所不。此外，在圖案層114成形之後， 如第9圖所不’銷126可移動遠離圖案裝置邮，以致於圖案 19 200804053 裝置48可呈實質上平坦狀。銷126可與處理器122連通以致 於銷126可使用力反饋(force feedback)技術來決定該力的大 /J、〇 如第19圖所示，為進一步促進鑄模52與基材12分離， ^ 5可經由銷126引入氣體148於基材12與鑄模52之間。更具體 而言，銷126可包括一通道150,其具有孔洞152與一壓力控 制系統流體連通，例如一泵系統38。於另一實施例中，銷 _ 126可包括任何數量的細。孔洞152可定位於將氣體148引 入於鑄杈52與基材12之間。氣體148施加一力於鑄模52與基 1〇材12上，以將鑄模52以遠離基材12的方向推動，且將基材 12以遂離鑄模52的方向推動。如圖所示，當銷靠近於模 板時，氣體148即可被引入於鑄模52與基材12之間；然 而，於另-實施例中，氣體148可於銷126在任何位置時被 引入於鑄模52與基材12之間。 上述本發明的實施例是用以舉例說明。可對以上的揭 • Μ許乡改變及變更，而仍在本發明的範圍巾。因此，本 I明的fen必須不是由上述所限制，而必須參考以下申請 - 專利範圍，以及其等效的全部範圍所決定。 【圖式簡單說明】 弟Θ疋種说影糸統之間化側視圖，其具有一與基材 相間::的圖案裝置，該圖案裝置包括一模板及一鑄模； 第2圖疋如第丨圖所示該基材的俯仰視圖，該基材具有 内、中及外徑； ^ 第3圖是如第丨圖所示該基材耦接於一基材夾合座之側 20 200804053 5 視圖； 第4圖是如第3圖所示該基材夾合座之由底向上平面 圖， 第5圖是如第1圖所示該模板以一鑄模與其耦接之俯仰 視圖， 第6圖是如第1圖所示該模板|馬接於一模板夾合座之側 視圖， • 第7圖是如第6圖所示該模板夾合座之由底向上平面 圖， 10 第8圖是顯示如第1圖所示定位於該基材的一區域上壓 印材料的液滴陣列之俯仰視圖； 第9圖是如第1圖所示該基材的簡化側視圖，具有一圖 案層位於其上； 第10圖是顯示於第一實施例中，如第1圖所示的基材形 15 成圖案的方法之流程圖； 第11圖是如第1圖所示的圖案裝置已改變形狀之側視 圖； 第12圖是如第11圖所示圖案裝置之侧視圖，其與第8圖 所示的壓印材料的液滴的一部分接觸； 20 第13-15圖是顯示第8圖所示該等液滴的壓縮情形之俯 仰視圖，其設置如第8圖所示已改變形狀的模板； 第16圖是顯示於第二實施例中，如第1圖所示的基材的 一區域形成圖案的方法之流程圖； 第17圖是如第1圖所示的基材已改變形狀之側視圖； 21 200804053 第18圖是一銷施加一力於第1圖所示的圖案裝置上以 改變其形狀之侧視圖；及 第19圖是如第1圖所示的系統之侧視圖，其中有氣體引 入於該圖案裝置與該鑄模之間。 【主要元件符號說明】As shown in Figures 1, 8 and 9, as mentioned above, the distance between the mold 52 and the substrate 12 can be varied such that the desired volume can be defined for filling of the polymeric material 1 此外 and after curing, polymerization The material 100 will conform to the shape of the surface 10 of the substrate 12 and the pattern surface 54 to define a patterned layer 114 on the substrate 12. For this purpose, gas is present in the volume defined between the droplets 1〇2 of the matrix array 104, and the droplets 1〇2 in the matrix array 104 are distributed over the substrate 12, if at all times, Gas and/or air pockets can be prevented from being trapped between the substrate 12 and the mold 52 and in the pattern layer 114. The gases and/or air pockets may be 4 without being limited to work gas, nitrogen, carbon dioxide, and helium. The gas and/or cavitation between the substrate 12 and the prayer pattern 52 and in the pattern layer 114 may, in particular, cause distortion of the pattern of features formed on the pattern layer 114, and a 4-inch low precision formed on the pattern layer. The thickness of the residual layer on the pattern layer 114 is not good, and flying is not good. For this purpose, it will be explained below that a method and system 4 can prevent gas and/or air pockets from being trapped between the base and the mold 52 and in the pattern layer 114 to a minimum. As shown in Figs. 1 and 10, in the first embodiment, a method of discharging the substrate between the substrate and the mold 52 is shown. More specifically, in the outline of the steps, as mentioned above, can be shaft, spin-dish, immersion coating, 14 200804053 chemical vapor deposition (CVD), physical vapor deposition (pvD), thin film deposition, thick film deposition, etc. The polymeric material 100 is positioned on the substrate 12. In another embodiment, the polymeric material 1 can be positioned on the mold 52. As shown in Figures 6, 7, 10 and 11, in step 2〇2, the shape of the pattern device 48 can be changed. More specifically, the shape of the patterning device 48 can be varied to provide a distance between the prayer mold 52 and the substrate 12 at the intermediate half η of the substrate 12, as shown in FIG. The distance defined between the die 52^ and the substrate 12 is smaller than at other portions of the mold 52. For example, the distance d1 is less than a distance 屯' distance 4 is defined by an edge of the mold 52. In another embodiment 10, the distance mountain can be defined by any desired location of the mold 52. The shape of the patterning device 48 can be varied by controlling the pressure in the first and third chambers 68 and 72. More specifically, as mentioned above, pump system 84 is actuatable to control the pressure in third and third chambers 68 and 72. To this end, the pump system 84 can create a vacuum in the first and third chambers 68 and 72 via the passage 80 such that portions 86a and 86c of the mold 15 plate 50 can be bowed away from the substrate 12 and bowed toward the formwork clip. Φ seat 60. As portions 86a and 86c of template 50 are bent away from substrate 12, portion 86b of template 50 will bow toward substrate 12 away from template holder 6. - as shown in Figures 1, 12 and 13, at step 204, as described above, reference to Figure 1 'imprint head 97 (as shown in Figure 1) or one or both of steps 20 The distance mountain is changed, as shown in Fig. 11, so that a portion of the mold 52 can contact the primary portion of the droplet 102. As shown, before the other portions of the mold 52 contact the remaining droplets of the droplets 102, the portion of the mold 52 that overlaps the intermediate radius Γ3 of the substrate 12, as shown in Fig. 2, first contacts the droplets 1〇2. One knife. However, in another embodiment, any portion of the mold 52 may contact the droplets prior to the other portions of the prayer mold 15 200804053 52. To this end, as shown, the mold 52 can substantially simultaneously contact all of the liquid, quotient 102, which is stacked with the intermediate radius (10) of the substrate 12, as shown in FIG. This causes the droplets 1〇2 to diffuse and produce a continuous sheet of liquid material 13〇. The edge 132 5 of the liquid sheet (10) defines a liquid-liquid interface 134 that functions to push gas within the volume 128 toward the edge 136 of the substrate 12. The volume 128 between the droplets defines the airway and the gas can be pushed to the miscellaneous 136 via the gas. Thereby, the (four) state interface 134 is combined with the air passage to reduce gas trapping in the liquid sheet if it cannot be prevented. As shown in Figures 7, 10 and 14, in step 2〇6, the shape of the pattern device can be changed to define the desired volume between the mold 52 and the substrate 12, which can be filled with the polymeric material 100. Full, as described above with reference to the figure. More specifically, δ, the shape of the patterning device 48 can be changed by combining the pressures in the first and second chambers to 88 and 96, with the stamping head 97 (as shown in FIG. 1) and/or the stage 16 The force applied due to contact with the polymeric material 1 and the mold 52. More generally, the pump system 84 is actuatable to control the pressure in the first and third chambers 88 and 96, as discussed above. To this end, the pump system 84 can reduce the amount of vacuum created in the first and third chambers 88 and 96 via the passage 8 to an intermediate radius η with the droplet 1001⁄4 about the substrate 12 (as in Figure 2). Subsequent sub-combination of the associated polymeric material 100 will diffuse into inclusion in the continuous liquid sheet 20 130 as shown in FIG. The shape of the patterning device 48 continues to be altered so that the mold 52 will then contact other droplets 102 such that the polymeric material 100 associated therewith will diffuse into the continuous sheet 130, as shown in FIG. As can be seen, the interface 134 has moved to the edge 136, so that the gas in the other residual volume 128, as shown in Figure 8, has a clear path for movement. 16 200804053 H-product 128_gas', as shown in Fig. 8, can run out of the mold 136 between the mold 52 and the base. In this manner, if the gas and/or cavitation trapped between the substrates 12 and 1 and the pattern layer 114 are not prevented, the W can be minimized. In another embodiment, the heart shape of the patterning device 48 can be varied while reducing the distance to the mountain, as indicated above with reference to FIG. In the other embodiment, in order to promote the change in the shape of the patterning device 48, the pressure in the second chamber 92 is made. More specifically, the porting system 84 can be actuated to control the pressure 10 in the second chamber 92. For this purpose, the pump system 84 can make the portion of the core plate 50 via the pressure of the channel into the second chamber. 86c can be bent toward the substrate 12 and bowed away from the template holder 60 and the pressure in the second chamber 92 can be formed simultaneously with the vacuum conditions of the first and third chambers 88 and 96 as mentioned above. . As shown in Figures 1 and 10, in steps 2〇8, as indicated above with reference to Figure 15, the polymeric material (10) can be cured and/or crosslinked to define the pattern layer 114, as shown in Figure 9. Show. Next, in the step, the mold 52 can be separated from the pattern layer 114 as shown in Fig. 9. 9 as shown in Figures 1 and 16, is another embodiment showing the present invention. More specifically, in step 300, similar to the above, as shown in the figure (4), the polymeric material 1 can be positioned on the substrate 12 or mold %. As shown in Figures 3, 4, 16 and 17, in step 3〇2, similar to the above-described relative steps, as shown in the _th, the shape of the patterning device 48 can be changed. Further, the shape of the substrate 12 can be changed while the shape of the patterning device 48 is changed. More specifically, the shape of the substrate 12 can be changed by controlling the forces in the _ 17 200804053 and the third chambers 42 and 46. More specifically, as noted above, pump system 38 is actuatable to control the pressure in first and third chambers 42 and 46. To this end, the pump system 38 can be vacuumed in the first and third chambers 42 and 46 via the passage 36 such that a portion of the substrate 12 and the torsion bend 5 are away from the substrate holder 14 and the bow Bend to mold 52 as shown in Figure 17. Due to the portion 4Ga of the (4) 12 and the bow f of the substrate holder 14, a portion of the substrate 12 is bowed toward the mold 52 away from the substrate holder 14. As shown in the u, φ 13 and 16 diagrams, in step 304, similar to the above, with respect to step 204, as shown in FIG. 10, one or both of the imprint head 97 or the stage 16 can be changed by 10 distances from the mountain. As shown in Fig. u, so that a part of the mold 52 can contact the primary portion of the droplet 1〇2 overlapping the intermediate radius Q of the substrate I2, as shown in Fig. 2, the polymeric material 100 is produced on the same basis as the shell. The continuous liquid sheet 13 〇. As shown in Figures 4, 12 and 16, in step 3Ό6, similar to the above with respect to step 206, as shown in Fig. 1, the shape of the patterning device 48 can be changed, 15α to pray; The desired volume is defined between 12 and can be filled with polymeric material • 1〇0. Further, the shape of the substrate 12 can be changed while changing the shape of the patterning device 48. More specifically, as noted above, the pump system % can be actuated to control the pressure of the third chambers 42 and 46. To this end, at step 204 as described above, while changing the shape 20 of the patterning device 48 as shown in FIG. 10, the pump system % can be reduced in the first and third chambers 42 and 46 via the passage 36. The vacuum is sized such that the polymeric material 1 associated with the intermediate radius h of the droplet 1 around the substrate 12 (as shown in Figure 2) is diffused into a liquid wafer 130, such as the 14th. The figure shows. The shape of the substrate 12 can be further changed while changing the shape of the patterning device 48, so that the casting mold is in contact with its recording 2 so that the polymer material associated therewith is just diffused into the continuous sheet. 13〇, as shown in Fig. 15, the two gases in the first product 128, as shown in Fig. 8, can be written substantially in the same step as the first step, as shown in Fig. 1 from the mold S2 and the substrate u. Run 5 out between the edges 136. As shown in Figures 3 and 4, to promote a change in the shape of the substrate 12, the force in the second chamber 44 can be controlled. More specifically, as mentioned above, the pump line 38 is actuatable to control the pressure in the second chamber 44. To this end, the spring system 38 can create a pressure of the second chamber cake via the passage 34 such that the template bay knife 40b can bow the stomach toward the mold 52 and bow away from the substrate holder μ. Further, the pressure ' in the second chamber 44 can be formed simultaneously with the vacuum state of the first and third chambers 46 as mentioned above. - as shown in Figures 1 and 10, in step 3 〇 8, as mentioned above, reference numeral 1 does not, after which the polymeric material 1GG can be cured and cross-linked to define the pattern layer 5 114 ' as shown in Figure 9. Show. Next, in the step training, the prayer pattern 52 can be separated from the pattern layer 114 as shown in Fig. 9. As shown in Figures 6 and 18, in another embodiment, to facilitate the shape change of the patterning device 48, a pin 126 can be provided. More specifically, the pin 126 can be applied to the patterning device 48, which in this embodiment is applied to the first section 86c of the template 50. Thereby, the patterning device 48 can include the shape to be changed as described above and can be implemented by any of the methods described above. It is also possible to write a history (3) to facilitate the separation of the casting weight 52 from the substrate I2, respectively, as described above with respect to the steps - as in Figures 1 and 16. Moreover, after the pattern layer 114 is formed, the pin 126 can be moved away from the pattern device as shown in Fig. 9, so that the pattern 19 200804053 device 48 can be substantially flat. The pin 126 can be in communication with the processor 122 such that the pin 126 can use a force feedback technique to determine the magnitude of the force, as shown in FIG. 19, to further facilitate separation of the mold 52 from the substrate 12, ^ 5 Gas 148 may be introduced between the substrate 12 and the mold 52 via the pin 126. More specifically, the pin 126 can include a passage 150 having a bore 152 in fluid communication with a pressure control system, such as a pump system 38. In another embodiment, the pin 126 can include any number of fines. The aperture 152 can be positioned to introduce a gas 148 between the casting 52 and the substrate 12. The gas 148 exerts a force on the mold 52 and the base 12 to push the mold 52 away from the substrate 12 and push the substrate 12 away from the mold 52. As shown, gas 148 can be introduced between mold 52 and substrate 12 as the pin approaches the template; however, in another embodiment, gas 148 can be introduced at any position of pin 126. Between the mold 52 and the substrate 12. The above embodiments of the present invention are for illustration. It is possible to change and change the above, and still be within the scope of the present invention. Therefore, the fen of this specification must not be limited by the above, but must be determined by reference to the following application - patent scope, and the full scope of its equivalent. [Simple diagram of the drawing] The side view of the interpreting system has a pattern device which is interposed with the substrate: the pattern device includes a template and a mold; the second figure is like a 丨The bottom view of the substrate is shown in the figure, the substrate has inner, middle and outer diameters; ^ Figure 3 is the side of the substrate coupled to a substrate clamping seat as shown in Fig. 20 200804053 5 views Figure 4 is a bottom-up plan view of the substrate holder as shown in Figure 3, and Figure 5 is a bottom view of the template coupled to a mold as shown in Figure 1, Figure 6 is as Figure 1 shows the side view of the template | horse attached to a template holder, and Figure 7 is a bottom-up plan view of the template holder as shown in Figure 6, 10 Figure 8 shows 1 is a top view of a droplet array of an imprint material positioned on a region of the substrate; FIG. 9 is a simplified side view of the substrate as shown in FIG. 1 with a patterned layer thereon; Fig. 10 is a flow chart showing a method of patterning the substrate shape 15 as shown in Fig. 1 in the first embodiment; Fig. 11 is as Fig. 1 The illustrated patterning device has changed the side view of the shape; Fig. 12 is a side view of the patterning device as shown in Fig. 11 which is in contact with a portion of the droplet of the imprinting material shown in Fig. 8; Figure 15 is a elevation view showing the compression of the droplets shown in Figure 8, which is provided with a template having a changed shape as shown in Figure 8; Figure 16 is shown in the second embodiment, as shown in Figure 1. A flow chart of a method for forming a pattern of a region of a substrate; FIG. 17 is a side view of the substrate having a changed shape as shown in FIG. 1; 21 200804053 Figure 18 is a pin applying a force to the first The pattern device shown in the drawing is a side view in which the shape is changed; and Fig. 19 is a side view of the system as shown in Fig. 1, in which a gas is introduced between the pattern device and the mold. [Main component symbol description]
10…系統 56,58…凹部，凸部 12…紐 60…模板夾合座 14…;才夾合座 62,64…第一，二側 16…階台 66···側表面 18,20…第一，二側 68,70,72···第一，二，三凹部 22…側表面 74,76,78· ••第一，二，三支撐區域 20,22,24"·第一，二，三凹部 80,82…通道 26,28…第一，二支撐區域 84…泵系統 30,32…第三，四支撐區域 86a，86b，86c· · ·模板的部分 34,36…通道 88,92,96…第一，二,三腔室 38…泵系統 97…壓印頭 40a，40b，40c···基材的部分 98…流體分配系統 42,44,46…第一，二，三腔室 100…聚合材料 48…圖案裝置 102…液滴 50…模板 104…矩陣陣列 52…鑄模(凸台） 106…來源 54…圖案表面 108…能量 22 200804053 110…路徑 112…表面 114···圖案層 116···殘留層 118，120…凸部，凹部 122…處理器 124…記憶體 126…銷 128···容積 130···液態片體 132"·邊緣 134…液氣態界面 136…邊緣 148…氣體 150…通道 152···孔洞10...system 56,58...recess, convex 12...new 60...template clamping seat 14...; clamping seat 62,64...first, two sides 16...stage 66···side surfaces 18,20... First, two sides 68, 70, 72 · · first, second, three recesses 22 ... side surfaces 74, 76, 78 · • • first, second, three support areas 20, 22, 24 " first, Second, three recesses 80, 82... channels 26, 28... first, two support areas 84... pump systems 30, 32... third, four support areas 86a, 86b, 86c · · part of the template 34, 36... channel 88 , 92, 96... first, second, three chambers 38...pump system 97...imprint heads 40a, 40b, 40c···part of the substrate 98...fluid distribution system 42, 44, 46... first, second, Three chambers 100...polymeric material 48...patterning device 102...droplet 50...template 104...matrix array 52...mold (boss) 106...source 54...pattern surface 108...energy 22 200804053 110...path 112...surface 114·· Pattern layer 116···Residual layer 118, 120...convex, recess 122...processor 124...memory 126...pin 128···volume 130···liquid sheet 132"·edge 134...liquid gas state An edge surface 136 ... 148 ... 150 ... gas passage holes 152 ?????
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