TW371355B - High voltage metal insulator semiconductor field effect transistor and semiconductor integrated circuit device - Google Patents
High voltage metal insulator semiconductor field effect transistor and semiconductor integrated circuit deviceInfo
- Publication number
- TW371355B TW371355B TW083101806A TW83101806A TW371355B TW 371355 B TW371355 B TW 371355B TW 083101806 A TW083101806 A TW 083101806A TW 83101806 A TW83101806 A TW 83101806A TW 371355 B TW371355 B TW 371355B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- withstand voltage
- integrated circuit
- high voltage
- field effect
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
To make it possible to form a low-cost, high-performance and high-withstand voltage semiconductor integrated circuit as a high-withstand voltage MIS transistor can be formed on the same substrate along with a low-withstand voltage transistor of high-speed operation because the gate insulating film of the high-withstand voltage MIS transistor can be made thin. A high-withstand voltage transistor 15 and a low-withstand voltage transistor 14 are formed on a P-type substrate and an N+/- drain region 6 is formed between channel and N+ drain regions 7 of the transistor 15 for making it possible to form the film thickness of a gate oxide film 3 of the transistor 15 in a thickness equal with that of a gate oxide film 3 of the transistor 14.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4702093 | 1993-03-08 | ||
| JP4702393 | 1993-03-08 | ||
| JP9168993 | 1993-04-19 | ||
| JP26759693 | 1993-10-26 | ||
| JP00602294A JP3424694B2 (en) | 1993-03-08 | 1994-01-24 | High breakdown voltage insulated gate field effect transistor and semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW371355B true TW371355B (en) | 1999-10-01 |
Family
ID=27518663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083101806A TW371355B (en) | 1993-03-08 | 1994-03-02 | High voltage metal insulator semiconductor field effect transistor and semiconductor integrated circuit device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3424694B2 (en) |
| TW (1) | TW371355B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452674B (en) * | 2008-08-13 | 2014-09-11 | Seiko Instr Inc | Semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3831598B2 (en) | 2000-10-19 | 2006-10-11 | 三洋電機株式会社 | Semiconductor device and manufacturing method thereof |
| JP2002299609A (en) * | 2001-03-29 | 2002-10-11 | Nec Corp | Semiconductor device and method of manufacturing the same |
| JP5158095B2 (en) | 2008-01-10 | 2013-03-06 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| US9583612B1 (en) * | 2016-01-21 | 2017-02-28 | Texas Instruments Incorporated | Drift region implant self-aligned to field relief oxide with sidewall dielectric |
| JP2017147561A (en) * | 2016-02-16 | 2017-08-24 | 新日本無線株式会社 | Level shift circuit |
-
1994
- 1994-01-24 JP JP00602294A patent/JP3424694B2/en not_active Expired - Lifetime
- 1994-03-02 TW TW083101806A patent/TW371355B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452674B (en) * | 2008-08-13 | 2014-09-11 | Seiko Instr Inc | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07226505A (en) | 1995-08-22 |
| JP3424694B2 (en) | 2003-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |