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JPS5687368A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5687368A
JPS5687368A JP16512379A JP16512379A JPS5687368A JP S5687368 A JPS5687368 A JP S5687368A JP 16512379 A JP16512379 A JP 16512379A JP 16512379 A JP16512379 A JP 16512379A JP S5687368 A JPS5687368 A JP S5687368A
Authority
JP
Japan
Prior art keywords
injection region
ion injection
substrate
ion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16512379A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
Yukinobu Murao
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16512379A priority Critical patent/JPS5687368A/en
Publication of JPS5687368A publication Critical patent/JPS5687368A/en
Pending legal-status Critical Current

Links

Classifications

    • H01L29/105—
    • H01L29/1083—
    • H01L29/7838—

Abstract

PURPOSE:To obtain the desired threshold value for the subject semiconductor device by a method wherein the first ion injection region of the same inductive type as the semiconductor substrate and the second ion injection region of a reverse conductive type are provided on the channel section. CONSTITUTION:A gate oxidation film 104, a molybdenum gate electrode 107, a source and drain 103, and an aluminum wiring 108 are formed on a p type silicon substrate 101 and a MOSFET is obtained. Then the first ion injection region 105 is formed at the channel section of the FET by injecting the impurities (boron ion) of the same inductive type as the substrate 101 and in addition, the second ion injection region 106 is formed by doubly injecting the impurities (phosphoric ion) having the conductive type reverse to the substrate. And the impurity density required in forming the short channel MOSFET is secured by the region 105 and the desired threshold voltage is obtained by the resion 106.
JP16512379A 1979-12-19 1979-12-19 Semiconductor device Pending JPS5687368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16512379A JPS5687368A (en) 1979-12-19 1979-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16512379A JPS5687368A (en) 1979-12-19 1979-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687368A true JPS5687368A (en) 1981-07-15

Family

ID=15806343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16512379A Pending JPS5687368A (en) 1979-12-19 1979-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687368A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265374A (en) * 1985-09-17 1987-03-24 Toshiba Corp Manufacture of semiconductor device
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices
US4845047A (en) * 1987-06-25 1989-07-04 Texas Instruments Incorporated Threshold adjustment method for an IGFET
US5060033A (en) * 1988-08-18 1991-10-22 Seiko Epson Corporation Semiconductor device and method of producing semiconductor device
US5081052A (en) * 1986-06-25 1992-01-14 Hitachi, Ltd. ROM and process for producing the same
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor
US5156990A (en) * 1986-07-23 1992-10-20 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265374A (en) * 1985-09-17 1987-03-24 Toshiba Corp Manufacture of semiconductor device
JPH0521352B2 (en) * 1985-09-17 1993-03-24 Tokyo Shibaura Electric Co
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices
US5081052A (en) * 1986-06-25 1992-01-14 Hitachi, Ltd. ROM and process for producing the same
US5156990A (en) * 1986-07-23 1992-10-20 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US4845047A (en) * 1987-06-25 1989-07-04 Texas Instruments Incorporated Threshold adjustment method for an IGFET
US5060033A (en) * 1988-08-18 1991-10-22 Seiko Epson Corporation Semiconductor device and method of producing semiconductor device
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor

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