JPS5762565A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5762565A JPS5762565A JP55137465A JP13746580A JPS5762565A JP S5762565 A JPS5762565 A JP S5762565A JP 55137465 A JP55137465 A JP 55137465A JP 13746580 A JP13746580 A JP 13746580A JP S5762565 A JPS5762565 A JP S5762565A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- grown
- injected
- covered
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- -1 arsenic ions Chemical class 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H01L27/0928—
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a short channel high melting point metal gate CMOS transistor having desired threshold voltage and excellent charcteristics by using high melting point metal as the gate metal of a complementary insulated gate field effect transistor. CONSTITUTION:A P-well 102 is formed in an N type silicon substrate, an N-well 103 is further formed therein, and a field oxidized film 104 is grown in an inert region. Then, a gate oxidized film 105 is grown in the active region, and molybdenum 106 is covered thereon by a sputtering method. A gate electrode 107 is then formed by a photoetching method, arsenic ions are injected to the N-channel MOS transistor side to form source and drain diffused layer 108, boron ions are injected to the P-channel side to form a source and drain diffused layer 109. Subsequetly, an interlayer insulating film 110 is covered thereon, and an aluminum wire electrode 112 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137465A JPS5762565A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137465A JPS5762565A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762565A true JPS5762565A (en) | 1982-04-15 |
Family
ID=15199231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55137465A Pending JPS5762565A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762565A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965481A (en) * | 1982-10-06 | 1984-04-13 | Nec Corp | Semiconductor device |
| JPS6362356A (en) * | 1986-09-03 | 1988-03-18 | Mitsubishi Electric Corp | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917074A (en) * | 1972-06-09 | 1974-02-15 | ||
| JPS4927988A (en) * | 1972-07-12 | 1974-03-12 |
-
1980
- 1980-10-01 JP JP55137465A patent/JPS5762565A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917074A (en) * | 1972-06-09 | 1974-02-15 | ||
| JPS4927988A (en) * | 1972-07-12 | 1974-03-12 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965481A (en) * | 1982-10-06 | 1984-04-13 | Nec Corp | Semiconductor device |
| JPH0586663B2 (en) * | 1982-10-06 | 1993-12-13 | Nippon Electric Co | |
| JPS6362356A (en) * | 1986-09-03 | 1988-03-18 | Mitsubishi Electric Corp | Semiconductor device |
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