TW202424634A - 反射型遮罩基底、反射型遮罩及其製造方法、以及半導體裝置之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩及其製造方法、以及半導體裝置之製造方法 Download PDF

Info

Publication number: TW202424634A
Authority: TW; Taiwan
Prior art keywords: film; etching mask; reflective; etching; mask
Prior art date: 2022-08-30

Application number

TW112132286A

Other languages

English (en)

Chinese (zh)

Inventor

谷口和丈

中川真德

Original Assignee

日商Ｈｏｙａ股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2022-08-30

Filing date

2023-08-28

Publication date

2024-06-16

2023-08-28 Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司

2024-06-16 Publication of TW202424634A publication Critical patent/TW202424634A/zh

Links

238000000034 method Methods 0.000 title claims abstract description 65
238000004519 manufacturing process Methods 0.000 title claims description 35
239000004065 semiconductor Substances 0.000 title claims description 27
238000005530 etching Methods 0.000 claims abstract description 246
229910052760 oxygen Inorganic materials 0.000 claims abstract description 110
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 105
239000001301 oxygen Substances 0.000 claims abstract description 105
239000006096 absorbing agent Substances 0.000 claims abstract description 94
238000010521 absorption reaction Methods 0.000 claims abstract description 84
229910052715 tantalum Inorganic materials 0.000 claims abstract description 33
230000008569 process Effects 0.000 claims abstract description 28
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 27
238000001312 dry etching Methods 0.000 claims abstract description 22
229910052710 silicon Inorganic materials 0.000 claims abstract description 21
239000010703 silicon Substances 0.000 claims abstract description 19
239000000758 substrate Substances 0.000 claims description 112
239000011651 chromium Substances 0.000 claims description 71
230000001681 protective effect Effects 0.000 claims description 41
229910052804 chromium Inorganic materials 0.000 claims description 27
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 25
238000012546 transfer Methods 0.000 claims description 24
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
229910052707 ruthenium Inorganic materials 0.000 claims description 16
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 14
238000000059 patterning Methods 0.000 claims description 8
230000006378 damage Effects 0.000 abstract description 16
239000010408 film Substances 0.000 description 483
239000010410 layer Substances 0.000 description 267
239000007789 gas Substances 0.000 description 83
239000000463 material Substances 0.000 description 63
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150000001875 compounds Chemical class 0.000 description 32
229910052751 metal Inorganic materials 0.000 description 23
229910052757 nitrogen Inorganic materials 0.000 description 20
239000002184 metal Substances 0.000 description 16
239000000460 chlorine Substances 0.000 description 15
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239000011737 fluorine Substances 0.000 description 13
229910052731 fluorine Inorganic materials 0.000 description 13
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229910052801 chlorine Inorganic materials 0.000 description 12
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
230000007547 defect Effects 0.000 description 11
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238000002310 reflectometry Methods 0.000 description 11
238000010586 diagram Methods 0.000 description 10
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238000001755 magnetron sputter deposition Methods 0.000 description 9
238000005546 reactive sputtering Methods 0.000 description 9
239000002344 surface layer Substances 0.000 description 9
239000000203 mixture Substances 0.000 description 8
239000010955 niobium Substances 0.000 description 8
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238000004140 cleaning Methods 0.000 description 6
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239000010936 titanium Substances 0.000 description 6
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
229910045601 alloy Inorganic materials 0.000 description 5
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229910052750 molybdenum Inorganic materials 0.000 description 5
239000011733 molybdenum Substances 0.000 description 5
229910052703 rhodium Inorganic materials 0.000 description 5
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 5
239000010409 thin film Substances 0.000 description 5
241001521328 Ruta Species 0.000 description 4
235000003976 Ruta Nutrition 0.000 description 4
230000005540 biological transmission Effects 0.000 description 4
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239000010949 copper Substances 0.000 description 4
238000013461 design Methods 0.000 description 4
238000010894 electron beam technology Methods 0.000 description 4
238000001900 extreme ultraviolet lithography Methods 0.000 description 4
239000011521 glass Substances 0.000 description 4
239000010931 gold Substances 0.000 description 4
239000011777 magnesium Substances 0.000 description 4
239000011572 manganese Substances 0.000 description 4
229910052758 niobium Inorganic materials 0.000 description 4
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MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
229910010413 TiO 2 Inorganic materials 0.000 description 2
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230000002411 adverse Effects 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
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238000004380 ashing Methods 0.000 description 2
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GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
229910052743 krypton Inorganic materials 0.000 description 2
DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
229910052749 magnesium Inorganic materials 0.000 description 2
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150000003624 transition metals Chemical class 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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239000010937 tungsten Substances 0.000 description 2
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XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
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229910016006 MoSi Inorganic materials 0.000 description 1
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229910000929 Ru alloy Inorganic materials 0.000 description 1
101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
241001538551 Sibon Species 0.000 description 1
229910004531 TaB Inorganic materials 0.000 description 1
229910004162 TaHf Inorganic materials 0.000 description 1
229910004166 TaN Inorganic materials 0.000 description 1
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230000002745 absorbent Effects 0.000 description 1
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238000004458 analytical method Methods 0.000 description 1
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YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
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230000007423 decrease Effects 0.000 description 1
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RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
230000003631 expected effect Effects 0.000 description 1
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
239000002241 glass-ceramic Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000001459 lithography Methods 0.000 description 1
229910052752 metalloid Inorganic materials 0.000 description 1
150000002738 metalloids Chemical class 0.000 description 1
229910021344 molybdenum silicide Inorganic materials 0.000 description 1
QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
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235000012239 silicon dioxide Nutrition 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000005245 sintering Methods 0.000 description 1
238000005477 sputtering target Methods 0.000 description 1
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239000000126 substance Substances 0.000 description 1
SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
239000013077 target material Substances 0.000 description 1
GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
238000002834 transmittance Methods 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

TW112132286A 2022-08-30 2023-08-28 反射型遮罩基底、反射型遮罩及其製造方法、以及半導體裝置之製造方法 TW202424634A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2022-136730		2022-08-30
JP2022136730		2022-08-30

Publications (1)

Publication Number	Publication Date
TW202424634A true TW202424634A (zh)	2024-06-16

Family

ID=90099608

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW112132286A TW202424634A (zh)	2022-08-30	2023-08-28	反射型遮罩基底、反射型遮罩及其製造方法、以及半導體裝置之製造方法

Country Status (3)

Country	Link
JP (2)	JP7459399B1 (ja)
TW (1)	TW202424634A (ja)
WO (1)	WO2024048387A1 (ja)

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* Cited by examiner, † Cited by third party
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JP2011197375A (ja)	2010-03-19	2011-10-06	Dainippon Printing Co Ltd	反射型マスクの製造方法および該製造に用いられる反射型マスクブランク
JP5471835B2 (ja)	2010-05-26	2014-04-16	大日本印刷株式会社	反射型マスクの位相欠陥補正方法および反射型マスクの製造方法
JP2012089580A (ja)	2010-10-15	2012-05-10	Renesas Electronics Corp	Ｅｕｖｌ用マスクの製造方法および半導体装置の製造方法
JP5464186B2 (ja) *	2011-09-07	2014-04-09	信越化学工業株式会社	フォトマスクブランク、フォトマスク及びその製造方法
JP5874407B2 (ja)	2012-01-23	2016-03-02	大日本印刷株式会社	位相欠陥の影響を低減するｅｕｖ露光用反射型マスクの製造方法
JP6060636B2 (ja) *	2012-01-30	2017-01-18	旭硝子株式会社	Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP2017161629A (ja)	2016-03-08	2017-09-14	凸版印刷株式会社	フォトマスクブランクとフォトマスクの製造方法
KR101801101B1 (ko) *	2016-03-16	2017-11-27	주식회사 에스앤에스텍	위상반전 블랭크 마스크 및 포토 마스크
US20220121102A1 (en) *	2019-02-28	2022-04-21	Hoya Corporation	Reflective mask blank, reflective mask, method for producing same, and method for producing semiconductor device
JP2022098726A (ja)	2020-12-22	2022-07-04	ブラザー工業株式会社	画像形成装置

2023
- 2023-08-23 JP JP2023569982A patent/JP7459399B1/ja active Active
- 2023-08-23 WO PCT/JP2023/030283 patent/WO2024048387A1/ja unknown
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JPWO2024048387A1 (ja)	2024-03-07
JP7459399B1 (ja)	2024-04-01
WO2024048387A1 (ja)	2024-03-07
JP2024081687A (ja)	2024-06-18

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