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SG10202002368YA - Phase shift mask blank and phase shift mask - Google Patents

Phase shift mask blank and phase shift mask

Info

Publication number
SG10202002368YA
SG10202002368YA SG10202002368YA SG10202002368YA SG10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
blank
mask blank
phase
Prior art date
Application number
SG10202002368YA
Other languages
English (en)
Inventor
Takuro Kosaka
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10202002368YA publication Critical patent/SG10202002368YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10202002368YA 2019-03-29 2020-03-16 Phase shift mask blank and phase shift mask SG10202002368YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019067065 2019-03-29
JP2019111026 2019-06-14

Publications (1)

Publication Number Publication Date
SG10202002368YA true SG10202002368YA (en) 2020-10-29

Family

ID=69845266

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202002368YA SG10202002368YA (en) 2019-03-29 2020-03-16 Phase shift mask blank and phase shift mask

Country Status (7)

Country Link
US (1) US11307490B2 (ja)
EP (1) EP3719575A1 (ja)
JP (1) JP7255512B2 (ja)
KR (1) KR102447767B1 (ja)
CN (1) CN111752087A (ja)
SG (1) SG10202002368YA (ja)
TW (1) TWI797436B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112666789B (zh) * 2020-12-02 2024-05-24 湖南普照信息材料有限公司 一种衰减型高均匀的相移光掩膜坯料及其制备方法
CN113488378A (zh) * 2021-07-21 2021-10-08 湖南普照信息材料有限公司 一种光掩模坯料及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60114811A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 光導波路およびその製造方法
JP3345447B2 (ja) * 1991-11-13 2002-11-18 株式会社東芝 露光用マスクの製造方法
KR0131192B1 (en) * 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
JP2002040625A (ja) 1992-07-17 2002-02-06 Toshiba Corp 露光用マスク、レジストパターン形成方法及び露光マスク用基板の製造方法
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
KR0168134B1 (ko) * 1993-05-25 1999-01-15 사토 후미오 반사형 위상쉬프트 마스크와, 투과형 위상쉬프트 마스크 및, 패턴형성방법
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
US5985493A (en) * 1998-04-08 1999-11-16 Lucent Technologies Inc. Membrane mask for projection lithography
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
DE102008054139B4 (de) * 2008-10-31 2010-11-11 Schott Ag Glas- oder Glaskeramik-Substrat mit Kratzschutzbeschichtung, dessen Verwendung und Verfahren zu dessen Herstellung
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6087401B2 (ja) * 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6500791B2 (ja) 2016-01-22 2019-04-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6733464B2 (ja) * 2016-09-28 2020-07-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6432636B2 (ja) 2017-04-03 2018-12-05 凸版印刷株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
WO2019058984A1 (ja) 2017-09-21 2019-03-28 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP6919475B2 (ja) 2017-09-29 2021-08-18 富士通株式会社 検知プログラム、装置、及び方法
JP7063607B2 (ja) 2017-12-22 2022-05-09 株式会社三共 遊技機
JP7264083B2 (ja) * 2019-03-29 2023-04-25 信越化学工業株式会社 位相シフトマスクブランクス、その製造方法及び位相シフトマスク

Also Published As

Publication number Publication date
US11307490B2 (en) 2022-04-19
JP7255512B2 (ja) 2023-04-11
JP2020204760A (ja) 2020-12-24
TWI797436B (zh) 2023-04-01
KR102447767B1 (ko) 2022-09-26
KR20200115241A (ko) 2020-10-07
CN111752087A (zh) 2020-10-09
TW202102932A (zh) 2021-01-16
US20200310241A1 (en) 2020-10-01
EP3719575A1 (en) 2020-10-07

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