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SG104317A1 - Radiation-sensitive resin composition - Google Patents

Radiation-sensitive resin composition

Info

Publication number
SG104317A1
SG104317A1 SG200202499A SG200202499A SG104317A1 SG 104317 A1 SG104317 A1 SG 104317A1 SG 200202499 A SG200202499 A SG 200202499A SG 200202499 A SG200202499 A SG 200202499A SG 104317 A1 SG104317 A1 SG 104317A1
Authority
SG
Singapore
Prior art keywords
radiation
resin composition
sensitive resin
sensitive
composition
Prior art date
Application number
SG200202499A
Other languages
English (en)
Inventor
Nagai Tomoki
Numata Jun
Kobayashi Eiichi
Shimokawa Tsutomu
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of SG104317A1 publication Critical patent/SG104317A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG200202499A 2001-04-27 2002-04-25 Radiation-sensitive resin composition SG104317A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001133702 2001-04-27

Publications (1)

Publication Number Publication Date
SG104317A1 true SG104317A1 (en) 2004-06-21

Family

ID=18981511

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200202499A SG104317A1 (en) 2001-04-27 2002-04-25 Radiation-sensitive resin composition

Country Status (7)

Country Link
US (1) US6821705B2 (ja)
EP (1) EP1253470B1 (ja)
JP (1) JP3988517B2 (ja)
KR (1) KR100828893B1 (ja)
DE (1) DE60236710D1 (ja)
SG (1) SG104317A1 (ja)
TW (1) TWI258058B (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3850781B2 (ja) * 2002-09-30 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
US7910223B2 (en) 2003-07-17 2011-03-22 Honeywell International Inc. Planarization films for advanced microelectronic applications and devices and methods of production thereof
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2005232388A (ja) * 2004-02-20 2005-09-02 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
EP1736485B1 (en) * 2004-04-13 2013-07-31 Tokyo Ohka Kogyo Co., Ltd. Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
JP4544085B2 (ja) * 2004-09-28 2010-09-15 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4665810B2 (ja) * 2005-03-29 2011-04-06 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
US7534548B2 (en) 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
KR20070085160A (ko) 2006-02-22 2007-08-27 제이에스알 가부시끼가이샤 도금 조형물 제조용 포지티브형 감방사선성 수지 조성물, 전사 필름 및 도금 조형물의 제조 방법
KR101231709B1 (ko) * 2007-10-11 2013-02-08 주식회사 엘지화학 콜레이트계 화합물 및 이를 포함하는 네가티브형 감광성수지 조성물
JP5290129B2 (ja) * 2008-12-25 2013-09-18 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP7041756B2 (ja) 2018-09-28 2022-03-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH03231592A (ja) 1990-02-06 1991-10-15 Canon Inc 投射型表示装置
JP2870998B2 (ja) 1990-06-21 1999-03-17 カシオ計算機株式会社 文字出力装置
JPH06123970A (ja) 1992-10-12 1994-05-06 Shin Etsu Chem Co Ltd ポジ型レジスト材料
JPH0784180A (ja) 1993-09-13 1995-03-31 Nikon Corp 水中用魚眼レンズ
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3491388B2 (ja) 1995-06-07 2004-01-26 株式会社村田製作所 多層厚膜体印刷方法および多層厚膜体
JP3231592B2 (ja) 1995-10-04 2001-11-26 旭光学工業株式会社 光学部材検査装置
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
US6120972A (en) * 1997-09-02 2000-09-19 Jsr Corporation Radiation-sensitive resin composition
US6143472A (en) * 1998-11-18 2000-11-07 Wako Pure Chemical Industries, Ltd. Resist composition and a method for formation of a pattern using the composition
JP2000089454A (ja) 1998-09-14 2000-03-31 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP4337172B2 (ja) 1999-06-14 2009-09-30 住友金属工業株式会社 エッジ検出方法、エッジ検出装置、及び記録媒体
KR20010009339A (ko) 1999-07-09 2001-02-05 박찬구 카르복시산 유도체 및 그 제조방법
JP2004500596A (ja) * 1999-11-17 2004-01-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ニトリル／フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法

Also Published As

Publication number Publication date
TWI258058B (en) 2006-07-11
EP1253470A2 (en) 2002-10-30
US6821705B2 (en) 2004-11-23
KR100828893B1 (ko) 2008-05-09
EP1253470A3 (en) 2003-11-05
KR20020092177A (ko) 2002-12-11
JP3988517B2 (ja) 2007-10-10
DE60236710D1 (de) 2010-07-29
JP2003015302A (ja) 2003-01-17
US20020192593A1 (en) 2002-12-19
EP1253470B1 (en) 2010-06-16

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