KR920020594A - LDD transistor structure and manufacturing method - Google Patents
LDD transistor structure and manufacturing method Download PDFInfo
- Publication number
- KR920020594A KR920020594A KR1019910005714A KR910005714A KR920020594A KR 920020594 A KR920020594 A KR 920020594A KR 1019910005714 A KR1019910005714 A KR 1019910005714A KR 910005714 A KR910005714 A KR 910005714A KR 920020594 A KR920020594 A KR 920020594A
- Authority
- KR
- South Korea
- Prior art keywords
- low concentration
- drain region
- concentration source
- polysilicon
- gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000012535 impurity Substances 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 제조공정 단면도.2 is a cross-sectional view of the manufacturing process of the present invention.
Claims (2)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910005714A KR920020594A (en) | 1991-04-10 | 1991-04-10 | LDD transistor structure and manufacturing method |
TW081102330A TW268136B (en) | 1991-04-10 | 1992-03-26 | |
DE4211999A DE4211999C2 (en) | 1991-04-10 | 1992-04-09 | LDD transistor and method for its production |
JP4116768A JP2547690B2 (en) | 1991-04-10 | 1992-04-10 | Method for manufacturing LDD transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910005714A KR920020594A (en) | 1991-04-10 | 1991-04-10 | LDD transistor structure and manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920020594A true KR920020594A (en) | 1992-11-21 |
Family
ID=19313084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910005714A KR920020594A (en) | 1991-04-10 | 1991-04-10 | LDD transistor structure and manufacturing method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2547690B2 (en) |
KR (1) | KR920020594A (en) |
DE (1) | DE4211999C2 (en) |
TW (1) | TW268136B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5518945A (en) * | 1995-05-05 | 1996-05-21 | International Business Machines Corporation | Method of making a diffused lightly doped drain device with built in etch stop |
US6339005B1 (en) * | 1999-10-22 | 2002-01-15 | International Business Machines Corporation | Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET |
US7732285B2 (en) * | 2007-03-28 | 2010-06-08 | Intel Corporation | Semiconductor device having self-aligned epitaxial source and drain extensions |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6143477A (en) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | Manufacture of mos transistor |
JPH06105715B2 (en) * | 1985-03-20 | 1994-12-21 | 株式会社日立製作所 | Method for manufacturing semiconductor integrated circuit device |
JPH01309376A (en) * | 1988-06-07 | 1989-12-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1991
- 1991-04-10 KR KR1019910005714A patent/KR920020594A/en not_active Application Discontinuation
-
1992
- 1992-03-26 TW TW081102330A patent/TW268136B/zh active
- 1992-04-09 DE DE4211999A patent/DE4211999C2/en not_active Expired - Fee Related
- 1992-04-10 JP JP4116768A patent/JP2547690B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0629308A (en) | 1994-02-04 |
TW268136B (en) | 1996-01-11 |
JP2547690B2 (en) | 1996-10-23 |
DE4211999C2 (en) | 1999-06-10 |
DE4211999A1 (en) | 1992-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |