KR20230173545A - Method for manufacturing the fine metal mask for high resolution OLED panel by using a charged body - Google Patents

Abstract

A method for manufacturing a fine metal mask (FMM) for manufacturing high-resolution OLED panels using a charged body is disclosed. In the above method, when manufacturing FMM for OLED panel manufacturing, in the etching process, (a) a metal layer that is an FMM material, a photo resist (PR or dry film) is formed on the upper and lower parts of the metal layer, and the photo resist (PR or dry film) is deposited in an etching solution, 1 performing a second wet etching; and (c) performing a second wet etching after the first wet etching, attaching a protective film to the lower part of the metal layer, and removing the lower protective film after the second wet etching. Because,
During the second wet etching, the metal layer with photo resist (PR or dry film) applied to the upper and lower sides of the metal layer is immersed in an etching solution, and a plurality of holes in a matrix structure forming a pixel are formed in the metal layer. When a (-) charged body is placed on the bottom of a metal layer, polarization of electrons/positive charges is generated inside the metal layer due to electrostatic induction when brought into close proximity, and the difference in electron density between the top and bottom of the metal layer causes the polarization to occur in the horizontal and vertical directions. It includes the step of performing wet etching.
When manufacturing an FMM, in the second etching process, with a protective film attached to the bottom of the metal layer (Invar metal), wet etching using a (-) charged body is performed, electrostatic induction of the (-) charged body 47 Because the barrier is maintained at a certain distance between holes due to the difference in electron density of the metal layer (Invar metal) 20, the etching time (3 to 5 minutes) is shorter than the conventional etching time (usually 5 to 10 minutes) through wet etching. Even if the FMM is manufactured by generating a large number of pixels (holes) per unit area, if the hole size of the Invar metal is manufactured to be small, the problems of the existing wet etching process can be solved by manufacturing an FMM with a large number of pixels per unit area. By manufacturing the solved FMM, high-resolution OLED panels can be manufactured.

Description

Method for manufacturing the fine metal mask for high resolution OLED panel by using a charged body}

The present invention relates to a method of manufacturing a fine metal mask (FMM) for manufacturing high-resolution OLED panels. More specifically, in the etching process, two etching processes are performed, and in the second etching process, the existing etching time (usually During a smaller etching time (3 to 5 minutes) (5 to 10 minutes), electrostatic induction is generated using a (-) charged body at the bottom of the Invar metal, at the bottom of the etching equipment, causing (-) charges to be deposited on the top of the Invar metal. As (electrons) gather and the electron density is relatively high, the horizontal etching speed decreases (less etching), and as (+) charges gather at the bottom of the Invar metal, the electron density relatively decreases and the vertical etching speed increases (etching becomes less). (this works well), the protruding sharp chin is etched, and the partition wall is maintained at a certain distance between holes due to the difference in electron density, so the etching time (3 to 5 minutes) is shorter than the existing etching time (usually 5 to 10 minutes). The present invention relates to a method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a (-) charged body, which manufactures a high-resolution OLED panel by manufacturing FMM by increasing the number of pixels (holes) per unit area.

Currently, the FMM (Fine Metal Mask) used by OLED panel manufacturers when manufacturing high-resolution panels is manufactured by DNP and Toppan companies in Japan, and the FMM manufacturing process consists of a two-step process that performs two wet etching processes. .

Figure 1 is a schematic diagram of manufacturing a FMM (Fine Metal Mask) product used in the process of depositing organic light-emitting materials or electrode materials when manufacturing an OLED panel.

FMM (Fine Metal Mask) is a product used in the process of depositing organic light-emitting materials or electrode materials when manufacturing OLED panels. It is a product that applies R (Red), G (Green), and B (Blue), which are materials that realize color only to the desired area on the OLED panel substrate, respectively, and creates a number of holes in the Invar metal layer, which is an alloy of nickel and iron. It is a manufactured product. To manufacture FMM, photo resist (PR) or dry film is provided on the top and bottom of the Invar metal layer to form a plurality of holes forming pixels in a matrix structure. FMM materials for OLED panel manufacturing use Invar metal, an alloy of nickel and iron.

Figure 2 is a diagram showing two wet etching processes as a FMM (Fine Metal Mask) manufacturing process used in OLED panel manufacturing.

The FMM currently used by OLED panel manufacturers when manufacturing high-resolution panels is manufactured by DNP and Toppan in Japan. The FMM manufacturing process consists of a two-step process that performs two wet etching processes.

Figure 3 shows the first wet etching (one-step process) with resists (Photo Resist) on the top and bottom of the metal layer (invar metal), which is an FMM material, and the second wet etching (two-step process) using a protective film on the bottom of the invar metal. This is a drawing showing the FMM manufacturing process using the step process.

The reason for manufacturing FMM by applying a two-step wet etching process is to minimize the hole size created by the etching method. The smaller each hole size, the more high-resolution OLED panels can be manufactured.

The FMM (Fine metal mask) manufacturing process used in OLED panel manufacturing is an etching process, and the second wet etching method is

Forming a 20㎛ thick metal layer (Invar metal), which is an FMM material for OLED panel manufacturing, and photo resist (PR or Dry Film) on the top and bottom of the metal layer (Invar metal), respectively;

Putting the metal layer on which photoresist (PR or dry film) is applied on the top and bottom of the metal layer (Invar metal) in an etching solution and performing a first wet etching;

After the first wet etching, creating a protective film on the bottom of the lower photoresist of the metal layer (Invar metal); and

After a protective film is attached to the lower part of the metal layer (Invar metal), it is subjected to a second wet etching, and after the second wet etching, the lower protective film is removed.

The reason for manufacturing FMM by applying this two-step etching process is to minimize the size of the number of holes in the Invar metal created by the etching method. The smaller each hole size, the more holes in the matrix structure. A high-resolution OLED panel can be manufactured using an FMM having these.

When holes in a matrix structure are created in a metal layer (Invar metal) through a single etching process, it is not easy to control the hole size formed by wet etching to be small, as shown in FIG. 3. The reason is because of the isotropic etching characteristics of the wet etching method, and in isotropic etching, the etching speed in the vertical direction is the same as the etching speed in the horizontal direction. Due to the isotropic nature of wet etching, as the etching time increases, the etching pattern of the metal created by etching increases the radius of the hole, forming a large circle, and the hole size formed when these large circles meet inevitably increases. Therefore, in order to reduce the hole size formed when circles meet, the radii of all circles must be made small, or at least the radius of one circle must be made small. The radius of the circle must be made smaller, or at least the radius of one side of the circle must be made smaller.

In order to reduce the radius of the circle, the etching time must be shortened, and for this reason, a second etching process is performed using a protecting film to prevent further etching on one circle.

The existing FMM manufacturing process that uses a two-step etching process has the problem of increased FMM manufacturing cost due to an increase in the number of steps and low yield. Currently, the yield of Japanese DNP's FMM products (Invar metal with a constant hole size) is less than 50%. It is known.

The etching process is a process that removes unnecessary parts using chemicals or gases to form circuit patterns in the semiconductor manufacturing process. The etching process uses dry etching or wet etching.

Because etching progresses through a chemical reaction depending on the concentration of the etchant, it is not easy to control the etching speed locally.

In the etching process, wet etching has the problem that when Invar metal is immersed in an etchant for a long time, the radius gradually increases not only in the vertical direction but also in the horizontal direction.

Therefore, in order to manufacture FMM for existing OLED panel manufacturing, a technology is needed to reduce the manufacturing cost of FMM and improve yield by reducing the number of processes by using a one-step wet etching process compared to the existing two-step wet etching process.

As prior art related to this, “Method for manufacturing a fine metal mask for OLED panel manufacturing using one-step wet etching technology” is registered in Patent Registration No. 10-2323615.

FMM materials for OLED panel manufacturing use Invar metal, an alloy of nickel and iron.

A one-step wet etching process using an external electric field is used on the anode (+) and cathode (-) electrodes located on the top and bottom of the FMM material (Invar metal) to form multiple holes in FMM for OLED panel manufacturing. A method for manufacturing FMM is provided.

By applying a one-step wet etching process using an external electric field, we provide one-step wet etching technology and etching equipment that can replace the conventional two-step wet etching process.

The FMM manufacturing method for OLED panel manufacturing using the one-step wet etching technology according to the embodiment includes a 20㎛ thick metal layer (Invar metal) for manufacturing an FMM (Fine metal mask) for OLED panel manufacturing, and the metal layer (Invar metal). Forming a photo resist (PR or dry film) on the upper and lower parts, respectively; and

The metal layer with photoresist (PR or dry film) applied to the top and bottom of the metal layer (Invar metal) is immersed in an etching solution, and a plurality of holes in a matrix structure forming pixels are formed in the metal layer (Invar metal) for FMM for OLED panel manufacturing. When a (+) permanently charged body or (-) permanently charged body is placed on the metal layer (Invar metal) to form a polarization inside the metal layer (Invar metal) by electrostatic induction upon proximity, it is wetted once. It includes the step of performing etching,

The metal layer uses Invar metal, an alloy of nickel and iron,

혼합 용액을 사용한다. The etching solution is

Use a mixed solution.

To manufacture the FMM for the OLED panel, a metal layer (Invar metal) coated with photoresist is placed on the top and bottom of the FMM material (Invar metal) in an etching solution, and a predetermined distance is spaced at the top and bottom of the metal layer. Position the cathode(-) electrode and anode(+) electrode, respectively, and apply different strengths of external electric field voltage (0 V, 1V, 2V, 3V) to the cathode(-) electrode and anode(+) electrode to induce static electricity. By adjusting the free electron density of the metal layer (Invar metal), electrostatic attraction that controls the etching rate is generated.

The etching model was analyzed by varying the voltage of the external electric field (0 V, 1 V, 2 V, 3 V). To control the etching speed using an external electric field, different strengths of the external electric field (0 V, 1V, 2V, 3V) are applied to the cathode (-) electrode and anode (+) electrode, and the etching model according to the strength of the external electric field is Analysis,

When there is no external electric field voltage (0 V), the etching speed of the top and bottom of the metal layer (Invar metal) is the same, so the top and bottom of the Invar metal are etched in the same form, and the electron density inside the metal layer is high. In part, using the principle that the etching speed decreases, as the strength of the voltage of the external electric field (0 V, 1V, 2V, 3V) increases, free electrons in the metal layer (Invar metal) due to electrostatic attraction. It is concentrated toward the bottom, and the etching rate of the bottom of the metal layer decreases compared to the top of the metal layer (Invar metal), so that the etching amount of the bottom of the metal layer (Invar metal) decreases compared to the top of the metal layer (Invar metal). As the strength of the external electric field increases, the etching rate of the bottom of the metal layer (Invar metal) decreases. ) is set to “0” and serves as a protective film for the lower part of the metal layer during the second wet etching during conventional FMM manufacturing.

However, as shown in Figure 4, if the etching time (shortly 1 to 4 minutes, usually 5 to 10 minutes) is shortened in the secondary wet etching process of the two-step etching process currently applied to FMM mass production, the final In the FMM structure, a protruding protruding protrusion (red circle) was created, and the generated protruding protrusion had a problem in that an area (shadow distance) where deposition of the organic luminescent material was difficult to occur was created during deposition of the organic luminescent material.

Figure 5 shows that in the second wet etching process when manufacturing FMM for conventional OLED panel manufacturing, the etching time (11 to 13 minutes) is longer than the existing etching time (1 to 3 minutes as short, usually 5 to 10 minutes) to over This is an etched drawing.

When manufacturing FMM for OLED panel manufacturing, if the existing etching time (usually 5 to 10 minutes) is shortened (1 to 4 minutes) in the second etching process of the two-step etching process currently applied to FMM mass production, the final FMM structure will have a sharp edge. One ridge (red circle) is created, and this sharp ridge is used in the second wet etching process to solve the problem of creating an area (shadow distance) where the organic luminescent material is difficult to deposit when depositing the organic luminescent material. Over-etching was performed with an etching time (11-13 minutes) longer than the etching time (usually 5-10 minutes).

When manufacturing FMM, photo resist (PR or Dry Film) is provided on the top and bottom of the Invar metal, and in the etching process, this is dipped into an etchant (enchant), and in the second wet etching process, the existing etching time (usually 5 to 10 minutes) is used. If over-etching is performed with a longer etching time (11 to 13 minutes), the isotropic etching characteristic causes the metal to be etched in the vertical direction to remove the protruding protrusion at the bottom of the Invar metal, but the 20㎛ thick metal becomes 2㎛ thick. However, there was a problem in that the partition wall between holes was lost because it was etched in a horizontal direction.

Therefore, when manufacturing FMM for high-resolution OLED panel manufacturing, after performing the second etching process, a large number of pixels (holes) per unit area must be created to manufacture the high-resolution OLED panel. Therefore, the protruding protruding chin of Invar metal, which is an FMM material, must be eliminated. , there is a barrier between the holes of Invar metal and a certain distance must be maintained.

Patent registration number 10-2323615 (registration date: November 2, 2021), "Method for manufacturing fine metal mask for OLED panel manufacturing using one-step wet etching technology", Yongseok Kim

The purpose of the present invention to solve the above problems is when manufacturing FMM for OLED panel manufacturing. In the etching process, a second etching process is performed. Photo resist (PR or Dry Film) is provided on the top and bottom of the Invar metal, which is the material of FMM, and this is dipped into an etching solution (enchant) and in the second wet etching process, the existing Etching is performed with a shorter etching time (3-5 minutes) than the etching time (usually 5-10 minutes), and the metal layer (Invar metal) is used to form multiple holes in the metal layer (Invar metal), which is a material of FMM for OLED panel manufacturing. When a (-) charged body is placed on the bottom of a (-) charged body, (+) charges are generated on the Invar metal close to the (-) charged body by electrostatic induction and (+) charges are generated on the Invar metal far from the (-) charged body. -) Electric charges are generated, causing polarization of electrons/positive charges within the Invar metal, and wet etching is performed in the horizontal and vertical directions due to the difference in electron density between the top and bottom of the metal layer, creating a sharp jaw. Forms multiple holes without

When manufacturing FMM, in the second etching process, a (-) charged body is used at the bottom of the Invar metal, at the bottom of the etching facility, during an etching time (3 to 5 minutes) that is less than the conventional etching time (usually 5 to 10 minutes). This generates electrostatic induction, causing (-) charges (electrons) to gather at the top of the Invar metal, and the electron density is relatively high, which reduces the horizontal etching speed (less etching), and (+) charges gather at the bottom of the Invar metal. Therefore, the electron density is relatively reduced and the vertical etching speed is faster (etching becomes easier), so the protruding sharp chin is etched, and a barrier is created at a certain distance between holes due to the difference in electron density of the Invar metal due to electrostatic induction. Because the etching time (3-5 minutes) is shorter than the existing etching time (usually 5-10 minutes), the high-resolution OLED panel is manufactured by manufacturing FMM by increasing the number of pixels (holes) per unit area. To provide a method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body, which manufactures an FMM.

In order to achieve the purpose of the present invention, a method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body includes (a) a metal layer that is an FMM material, and upper and lower parts of the metal layer in an etching process when manufacturing an FMM for manufacturing an OLED panel. forming a photo resist (PR or dry film) on each layer, placing it in an etching solution, and performing a first wet etching; and (b) after the first wet etching, a protective film is attached to the lower part of the metal layer, followed by a second wet etching, and removing the lower protective film after the second wet etching. In the second wet etching process, ,

During the second wet etching, the metal layer with photo resist (PR or dry film) applied to the upper and lower sides of the metal layer is immersed in an etching solution, and a plurality of holes in a matrix structure forming a pixel are formed in the metal layer. When a (-) charged body is placed at the bottom of a metal layer, polarization of electrons/positive charges is generated inside the metal layer due to electrostatic induction upon proximity, and the difference in electron density between the top and bottom of the metal layer causes the polarization to occur in the horizontal and vertical directions. It includes the step of performing wet etching.

The metal layer is a FMM (Fine Metal Mask) material and uses Invar metal, an alloy of nickel and iron.

The metal layer uses Invar metal with a thickness of 20㎛.

혼합 용액을 사용한다. The etching solution is

Use a mixed solution.

The photoresist (PR, dry film) uses a polyhydroxysyrene (PHS) or polymethylmetacrylic acid (PMMA)-based photoresist and further includes photosensitive polyimide.

The etching process of the metal layer is performed twice by wet etching. In the second wet etching process, the etching process is performed by electrostatic induction using a (-) charged body at the bottom of the etching equipment with a protective film attached to the bottom of the metal layer. Wet etching is performed twice by generating polarization of electrons/positive charges in the metal layer.

The method of manufacturing a fine metal mask (FMM) for high-resolution OLED panel manufacturing using the charged body of the present invention involves performing two etching processes in the etching process during FMM manufacturing, and protecting the lower part of the metal layer (Invar metal) in the second etching process. If wet etching is performed using a (-) charged body with the film attached, the existing etching time (as short as 1 to 4 minutes) is used during the second wet etching with the protective film attached to the lower part of the metal layer (Invar metal). , the etching time (11 to 13 minutes) is longer than the normal 5 to 10 minutes) to avoid protruding sharp edges, and the size of the multiple holes in the metal layer (Invar metal) is made small, making it difficult to deposit organic materials when depositing organic light-emitting materials. As there is no shadow distance, organic light-emitting materials can be deposited easily, and FMM manufacturing that can produce high-resolution OLED panels is possible compared to the existing No. 2 wet etching process.

Figure 1 is a schematic diagram of manufacturing a FMM (Fine Metal Mask) product used in the process of depositing organic light-emitting materials or electrode materials when manufacturing an OLED panel.
Figure 2 is a diagram showing two wet etching processes as a FMM (Fine Metal Mask) manufacturing process used in OLED panel manufacturing.
Figure 3 shows the first wet etching (one-step process) with resists (Photo Resist) on the top and bottom of the metal layer (invar metal), which is an FMM material, and the second wet etching (two-step process) using a protective film on the bottom of the invar metal. This is a drawing showing the FMM manufacturing process using the step process.
Figure 4 shows that if the etching time (1 to 2 minutes) is shortened in the second etching process of the two-step etching process (Figure 2) currently applied to FMM mass production, a sharp protrusion (red circle) is created in the final FMM structure. The protruding chin is a drawing showing the problem of creating an area (shadow distance) where deposition of the organic light emitting material is difficult when depositing the organic light emitting material.
Figure 5 shows that in the second wet etching process when manufacturing FMM for conventional OLED panel manufacturing, the etching time (11 to 13 minutes) is longer than the existing etching time (1 to 3 minutes as short, usually 5 to 10 minutes) to over This is an etched drawing.
Figure 6 is a roll to roll etching process diagram in which the charged body is designed when manufacturing FMM for OLED panel manufacturing.
Figure 7 is a diagram showing a method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body according to the present invention.

Hereinafter, the configuration and operation of the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention is not limited to the disclosed embodiments, but may be implemented in various different forms by those skilled in the art. In the description of the present invention, if it is determined that a detailed description of a related known technology or a known configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the attached drawing numbers are assigned the same drawing numbers in other drawings when indicating the same configuration.

It is not limited to specific embodiments through this research and development, and should be understood to include all conversions, equivalents, and substitutes included in the spirit and technical scope of the present invention.

When manufacturing FMM (Fine Metal Mask) for OLED panel manufacturing, FMM is a product manufactured through a process of depositing organic light-emitting materials or electrode materials. The above product is a product that applies R (Red), G (Green), and B (Blue), which are materials that realize color only to the desired area on the OLED panel substrate, respectively. Invar metal layer, which is an alloy of nickel and iron, It is manufactured by providing a photo resist (PR or dry film) on the top and bottom of the Invar metal layer to form a plurality of holes that form a pixel in a matrix structure.

Figure 6 is a roll to roll etching process diagram in which the charged body is designed when manufacturing FMM for OLED panel manufacturing.

The FMM manufacturing process for OLED panel manufacturing includes the following processes,

The pre-process process is to improve the adhesion between etching resist (Photo Resist (PR), Dry film) and Invar metal;

The laminate process is a process of applying etching resist to the top and bottom of the Invar metal surface;

The exposure process is a process of curing only the portion other than the plurality of holes in the etching resist by irradiating UV (ultraviolet rays) to a mask with a pattern in which a plurality of holes are formed in the etching resist using an exposure machine;

The development process is a process of removing etching resist from multiple uncured hole areas;

After performing the above processes, the etching process is wet etched twice. In the present invention, the etching time is longer than the existing etching time (usually 5 to 10 minutes) during the second wet etching with a protective film attached to the lower part of the Invar metal. (3~5 minutes) is shortened so that there are no sharp edges, and a (-) charged body is used at the bottom of the Invar metal to perform wet etching process twice by the difference in electron density of the Invar metal;

The stripping process is a process of stripping the upper and lower etching resists of Invar metal; and

The cutting process involves cutting 20㎛ thick invar metal sheets at regular intervals from several kilometers to hundreds of meters long, created during the roll-to-roll process.

Figure 7 is a diagram showing a method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body according to the present invention.

In the second etching process when manufacturing FMM, a negatively charged (-) charged body is used to generate a phenomenon of electrostatic induction of repulsive force in the free electrons inside the Invar metal where wet etching is performed, An etching method is provided in which wet etching is performed in the horizontal and vertical directions based on the difference in electron density between the and the bottom.

As shown in FIG. 7, in the second etching process when manufacturing FMM, a (-) charged body is used at the bottom of the etching facility at the bottom of the Invar metal to generate an electrostatic induction phenomenon to separate the top and bottom of the metal layer (Invar metal). It is characterized in that a (-) charged body 47 is used to perform wet etching in the horizontal and vertical directions due to the difference in electron density.

The method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using the charged body of the present invention is

When manufacturing FMM for OLED panel manufacturing, in the etching process, (a) a 20㎛ thick metal layer (Invar metal), which is an FMM material for OLED panel manufacturing, is provided, and photos are formed on the top and bottom of the metal layer (Invar metal) 20, respectively. Forming a resist (PR or Dry Film) (10,30); (b) The metal layer 20, on which photoresist (PR or dry film) 10, 30 is applied, is placed on the top and bottom of the metal layer (Invar metal) 20, is placed in an etching solution, and a first wet etching is performed. steps; and (c) after the first wet etching, a protective film 40 is provided on the bottom of the lower photoresist of the metal layer (Invar metal) 20, and the metal layer (Invar metal) 20 ), attaching the protective film 40 to the lower part, performing a second wet etching, and removing the lower protective film 40 after the second wet etching.

(d) When manufacturing an FMM, during the second wet etching, photo resist (PR or Dry Film) 10,30 is applied to the upper and lower parts of the metal layer (Invar metal) 20. ) is immersed in an etching solution, and a (-) charged body is placed at the bottom of the metal layer (Invar metal) 20 and at the bottom of the etching facility to form a plurality of holes in a matrix structure forming a pixel in the metal layer (Invar metal) 20. When (47) is brought into close proximity, polarization of electrons/positive charges occurs inside the metal layer (Invar metal) 20 due to electrostatic induction, and the top and bottom of the metal layer (Invar metal) 20 It includes the step of performing wet etching in the horizontal and vertical directions due to the difference in electron density.

When the (-) charged body 47 is placed on the lower part of the metal layer (Invar metal) 20 to form a plurality of holes in the metal layer (Invar metal), which is a material of FMM for OLED panel manufacturing, electrostatic induction occurs at the time of proximity. By this, (+) charges are generated on the Invar metal 20, which is close to the (-) charged body 47, and (-) charges are generated on the Invar metal 20, which is far from the (-) charged body 47. Polarization of electrons/positive charges was generated within the Invar metal 20, and wet etching was performed in the horizontal and vertical directions due to the difference in electron density between the top and bottom of the metal layer (Invar metal).

When the (-) charged body (47) is placed at the bottom of the etching equipment at the bottom of the metal layer (Invar metal) 20, (-) charges are deposited on the top of the Invar metal (20) by electrostatic induction when approached. (electrons) increase, the etching speed decreases in the horizontal direction (relatively less etching), and (+) charges are formed at the bottom of the Invar metal (20) opposite the (-) charged body (47). Since the etching speed increases in the vertical direction (etching becomes easier).

When the (-) charged body 47 is placed on the lower part of the metal layer (Invar metal), which is the material of the FMM, the Invar metal 20 close to the (-) charged body 47 is charged by electrostatic induction when it approaches. (+) charges are generated and (-) charges are generated on the Invar metal 20, which is far from the (-) charged body, causing polarization of electrons/positive charges within the Invar metal, and the metal layer (Invar metal) Wet etching is performed in the horizontal and vertical directions due to the difference in electron density between the top and bottom of (20). A partition wall exists between holes in the horizontal direction, a certain distance is maintained, and a sharp point protrudes in the vertical direction. A large number of holes are formed without any gaps, and when depositing organic light emitting materials, there are no areas (shadow distances) where the organic light emitting materials are difficult to deposit, ensuring that the organic light emitting materials are deposited without any gaps.

By doing this, the size of the multiple holes formed in the metal layer (Invar metal) 20, which is the material of the FMM, is reduced to produce a high-resolution FMM in which many pixels are generated per unit area, and the existing etching time (usually 5 to 10 minutes) in the etching process is reduced. ), even if wet etching is performed with a shorter etching time (3 to 5 minutes), the pointed protruding protrusion in the vertical direction is etched and a partition wall between holes is formed in the horizontal direction, thereby forming a barrier in the metal layer (Invar metal) (20). A number of holes forming a matrix-structured pixel are formed.

The metal layer 20 is a FMM (Fine Metal Mask) material and uses Invar metal, an alloy of nickel and iron.

The metal layer 20 uses Invar metal with a thickness of 20㎛.

혼합 용액을 사용한다. The etching solution is

Use a mixed solution.

The photoresist (PR, dry film) (10,30) uses a polyhydroxysyrene (PHS) or polymethylmetacrylic acid (PMMA)-based photoresist and further includes photosensitive polyimide.

The etching process of the metal layer (Invar metal) 20 is performed by wet etching twice, and in the wet etching process No. 2, with the protective film 40 attached to the lower part of the metal layer (Invar metal) 20. , Polarization of electrons/positive charges of the metal layer (Invar metal) 20 by electrostatic induction using a negative charge body 47 at the bottom of the etching facility, at the bottom of the metal layer (Invar metal) 20. By generating a second wet etching in the horizontal and vertical directions, the pointed protruding chin in the vertical direction is etched, and a partition wall between holes is formed in the horizontal direction, forming a plurality of pixels of a matrix structure in the Invar metal. High-resolution OLED panels are produced by producing FMM, which forms holes and produces more pixels per unit area as the size of the holes in the Invar metal becomes smaller.

The method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using the charged body of the present invention involves performing an etching process twice in the etching process when manufacturing an FMM for manufacturing an OLED panel, and photo-etching the top and bottom of the Invar metal, which is the material of the FMM, respectively. Prepare a resist (PR or Dry Film), immerse it in an etching solution (enchant), and in the second wet etching process, the etching time (3 to 5 minutes) is shorter than the existing etching time (usually 5 to 10 minutes). Wet etching is performed, and when a (-) charged body is placed on the lower part of the metal layer (Invar metal) to form a plurality of holes in the metal layer (Invar metal), which is the material of FMM, electrostatic induction occurs ( -) (+) charges are created on the Invar metal close to the charged body, and (-) charges are created on the Invar metal far from the charged body, causing polarization of electrons/positive charges within the Invar metal, Wet etching is performed in the horizontal and vertical directions due to the difference in electron density between the top and bottom of the metal layer (Invar metal). A partition exists between holes in the horizontal direction, a certain distance is maintained, and the etching is performed in the vertical direction. A large number of holes are formed without protruding sharp protrusions, and when depositing organic light emitting materials, there are no areas (shadow distances) where deposition of organic light emitting materials is difficult, so that organic light emitting materials can be deposited without any gaps.

When manufacturing FMM, in the second etching process, a (-) charge is placed on the bottom of the Invar metal at the bottom of the etching equipment during an etching time (3 to 5 minutes) that is smaller than the conventional etching time (usually 5 to 10 minutes). By generating electrostatic induction, (-) charges (electrons) gather on the top of the Invar metal, and the electron density is relatively high, so the horizontal etching speed is reduced (less etching occurs), a partition between holes exists, and a certain distance is maintained. As positive charges gather at the bottom of the Invar metal, the electron density is relatively reduced, which speeds up the vertical etching speed (easier etching), and the protruding protruding chin is etched.

(-) A barrier is maintained at a certain distance between holes due to the difference in electron density of the Invar metal due to electrostatic induction of the charged body (47), so the etching time (3 to 5 minutes) is longer than the existing etching time (usually 5 to 10 minutes). ) Even if wet etching is performed briefly, a high-resolution OLED panel can be produced by manufacturing FMM with more pixels (holes) per unit area.

The method of manufacturing a fine metal mask (FMM) for manufacturing a high-resolution OLED panel using the charged body of the present invention involves attaching a protective film to the lower part of the metal layer (Invar metal) in the second etching process in the etching process when manufacturing the FMM, ( -) When wet etching is performed using a charged body, a barrier is maintained at a certain distance between holes due to the difference in electron density of the metal layer (Invar metal) 20 due to electrostatic induction of the (-) charged body 47. Even if wet etching is performed with a shorter etching time (3 to 5 minutes) than the existing etching time (usually 5 to 10 minutes), FMM is manufactured by creating more pixels (holes) per unit area, and the multiple hole sizes of Invar metal By manufacturing a small FMM that generates a large number of pixels per unit area, it is possible to manufacture a high-resolution OLED panel by manufacturing an FMM that solves the problems of the existing wet etching process.

Although the present invention has been described with reference to specific embodiments of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiments to illustrate the technical idea as described above, and is not limited to the technical idea and scope of the present invention. It can be implemented with various modifications, and the scope of the present invention should be determined by the claims described later.

10: Top photo resist (PR or Dry Film)
20: Metal layer (Invar metal)
30: Lower photo resist (PR or Dry Film)
40: protective film
47: (-) charged body

Claims (7)

When manufacturing an FMM for OLED panel manufacturing, in the etching process, (a) a metal layer, which is an FMM material, and a photoresist (PR or dry film) forming on the top and bottom of the metal layer, respectively, are immersed in an etching solution and subjected to a first wet etching. carrying out; and (b) after the first wet etching, a protective film is attached to the lower part of the metal layer, followed by a second wet etching, and removing the lower protective film after the second wet etching. Because,
During the second wet etching, the metal layer with photo resist (PR or dry film) applied to the upper and lower sides of the metal layer is immersed in an etching solution, and a plurality of holes in a matrix structure forming a pixel are formed in the metal layer. When a (-) charged body is placed at the bottom of a metal layer, polarization of electrons/positive charges is generated inside the metal layer due to electrostatic induction upon proximity, and the difference in electron density between the top and bottom of the metal layer causes the polarization to occur in the horizontal and vertical directions. A method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body comprising the step of performing wet etching. According to paragraph 1,
The metal layer is a FMM (Fine Metal Mask) material. A method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged material using Invar metal, an alloy of nickel and iron. According to paragraph 1,
A method of manufacturing a fine metal mask for manufacturing a high-resolution OLED panel using a charged body, wherein the metal layer uses Invar metal with a thickness of 20㎛. According to paragraph 1,
The etching solution is

Method for manufacturing a fine metal mask for manufacturing high-resolution OLED panels using a charged material using a mixed solution. According to paragraph 1,
The photoresist (PR, dry film) uses a polyhydroxysyrene (PHS) or polymethylmetacrylic acid (PMMA)-based photoresist, and is a fine metal mask manufacturing method for high-resolution OLED panel manufacturing using a charged material further containing photosensitive polyimide. . According to paragraph 1,
The etching process of the metal layer is performed twice by wet etching. In the second wet etching process, with a protective film attached to the lower part of the metal layer, the (-) charged body is used at the bottom of the etching facility to conduct electrostatic induction. Manufacturing a fine metal mask for manufacturing high-resolution OLED panels using a charged body, which generates polarization of electrons/positive charges of the metal layer and performs a second wet etching in the horizontal and vertical directions due to the difference in electron density between the top and bottom of the metal layer. method. According to clause 6,
When the (-) charged body is placed on the lower part of the metal layer (Invar metal), which is the material of the FMM, (+) charges are generated on the Invar metal close to the (-) charged body by electrostatic induction when it approaches the (-) charged body. ) Negative charges are generated on the metal layer (Invar metal) far from the charged body, causing polarization of electrons/positive charges within the metal layer (Invar metal), and electrons at the top and bottom of the metal layer (Invar metal) Wet etching is performed in the horizontal and vertical directions due to the difference in density. In the horizontal direction, a partition between holes exists and a certain distance is maintained, and in the vertical direction, multiple holes are formed without sharp protrusions. A method of manufacturing a fine metal mask for manufacturing high-resolution OLED panels using a charged material that ensures that the organic light-emitting material is deposited without any gaps by ensuring that there are no shadow distances where the organic light-emitting material is difficult to deposit.