KR20160142036A - Etching Method for metal - Google Patents

Abstract

According to the present invention, an etching method of metal comprises the following steps of: preparing a substrate having a metal layer; forming an etching resist layer having an opening in the metal layer wherein the opening exposes a predetermined area of the metal layer; sinking the exposed area of the metal layer in an etching solution; and arranging a charged object to be separated from the metal layer by a predetermined interval to etch the metal layer. Therefore, density is localized by using a polarization phenomenon of electrons in metal through an external electrostatic interaction to realize a different etching speed.

Description

[0001] The present invention relates to an etching method for metal,

The present invention relates to a method of etching a metal.

BACKGROUND ART [0002] In recent years, as printed circuit boards tend to be thin and thin, the size of via holes to which metal wiring and electronic devices are connected is getting smaller, and a more minute circuit forming method is required.

BACKGROUND ART [0002] In general, in the production of a printed circuit board, various etching techniques are applied in forming a circuit by etching copper.

This etching technology is a core technology of photolithography technology which is applied to micromachining technology in the fields of semiconductor, communication, optics, electronic parts, and small precision machines. Recently, as the demand for miniaturization and high integration of electronic parts has increased, The importance is growing. Particularly, although the circuit forming method by wet etching is more advantageous in terms of productivity and cost than the circuit forming method by pattern plating, since the etching proceeds by the chemical reaction depending on the concentration and flow of the etching liquid, It is difficult to control the etching rate. Therefore, there are many restrictions to form a circuit by etching.

US Published Patent US 2012-0037411A

One aspect (or perspective) is to provide a method of etching a metal that can realize different etching rates by flattening the electron density by utilizing the polarization phenomenon of electrons in the metal through external electrostatic interactions.

According to one embodiment, a method of etching a metal comprises: preparing a substrate having a metal layer; Forming an etching resist layer on the metal layer, the etching resist layer having an opening exposing a predetermined region of the metal layer; Dipping the exposed region of the metal layer in an etchant; And etching the metal layer by disposing the entire body so as to be spaced apart from the metal layer by a predetermined distance.

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may properly define the concept of the term in order to best explain its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

1 is a flow diagram of a method of etching a metal according to an embodiment of the present invention.
Figure 2 illustrates etching a metal layer using the entirety of the present invention.
Figure 3 illustrates the local etching of a metal layer using the entirety of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the invention will become more apparent from the following detailed description and examples taken in conjunction with the accompanying drawings. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements have the same numerical numbers as much as possible even if they are displayed on different drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In this specification, the terms first, second, etc. are used to distinguish one element from another, and the element is not limited by the terms. In the accompanying drawings, some of the elements are exaggerated, omitted or schematically shown, and the size of each element does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Etching method of metal

First, a component-embedded printed circuit board according to an embodiment of the present invention will be described in detail with reference to the drawings. Here, reference numerals not shown in the drawings to be referred to may be reference numerals in other drawings showing the same configuration.

FIG. 1 is a flow diagram of a method of etching a metal according to an embodiment of the present invention, and FIG. 2 is a view illustrating etching of a metal layer using the entire body of the present invention.

1, a metal layer 110 is first formed on a substrate or an insulating layer 120, and then an etching resist pattern is formed to expose a predetermined region of the metal layer 110 (S101).

More specifically, a step of forming an etching resist in the form of a dry film on the metal layer 110 and patterning the opening is performed. Here, the etching resist 120 of the dry film is applied by using lamination. Here, the step of patterning the openings on the dry film will be described in detail. First, the dry film is closely contacted with the ArtWic film, and then the ultraviolet rays are irradiated to perform an exposure process for selectively curing the dry film. Thereafter, the opening portion can be patterned by performing a developing step of dissolving and removing the uncured dry film by using sodium carbonate, potassium carbonate, or the like.

Then, the etchant is infiltrated into the exposed pattern of the metal layer 110 (S102). The etchant used in the etching process is not particularly limited. For example, a hydrogen peroxide / hydrochloric acid (H 2 O 2 / HCl) etchant widely used for etching a printed circuit board may be used, or a ferric chloride (CuCl 2) FeCl 3) or an etching solution such as CN- / O 2, N-benzo (3-nitrobenzene sulfonic acid) / PEI (polyethylenimine) may be used alone or appropriately.

As shown in FIG. 2, the metal layer 110 is etched by arranging the entire body 140 so as to be spaced apart from the exposed metal layer 110 by a predetermined distance (S103). Here, the etching is performed while adjusting the etching rate corresponding to the polarization or separation distance of the exposed metal layer 110 and the induced large area 140. Unlike the electrolytic etching, the substrate is not electrically charged, The external electrode is etched by causing only the polarization of electrons in the metal layer of the substrate.

More specifically, one electrode of the bipolar transistor 140 is disposed at a position spaced apart from the exposed metal layer 110, or another electrode is disposed at a position spaced apart from the exposed metal layer 110, 110 and the positive and negative charges of the polarized light. If a large-sized electrostatic electrode 141 is disposed on the exposed metal surface of the metal layer 110, electrons are induced on the surface of the metal layer 110 to increase the electron density on the surface of the metal layer 110 (-) electrode is disposed on the metal layer 110, an electrostatic repulsive force is induced in the electrons (-) on the surface of the metal layer 110, so that the electron density at the surface And the etching rate is increased. At this time, the magnitude of the electrostatic interaction can be varied according to the distance between the metal layer 110 and the gap 140, thereby controlling the etching rate. Also, the magnitude of the electric force applied to the entire substrate can be adjusted to control the magnitude of the interaction between electrons in the substrate and the metal layer, and the etching rate can be controlled by the intensity of the electric power applied to the entire substrate.

In other words, the etching rate of the metal is correlated with the density of the electrons in the metal. In the portion where the density of the electrons is high, the rate of the etching is slower, and in the portion where the density of electrons is low, the rate of etching is increased. Therefore, if the electron density can be controlled in the metal, the etching can be selectively performed. The electromagnetization in the metal can be performed by using an external electrical force. Thus, in the present invention, the electron density in the metal is uniformized by using an external electric force to realize different etching rates. That is, when the positive charged body is brought close to the conductor, the free electrons having the negative charge inside the conductor move from the positive charge of the whole body to the negative charge side, (+) Charge is collected on the far side from the whole of the cell. Since the free electrons move in the conductor, the electrostatic induction phenomenon appears.

That is, when the metal layer is etched, an external electrode is used as a whole in order to adjust the etching rate, thereby inducing polarization of electrons in the metal layer. In this case, although the entire outer electrode is used, the etching rate can be controlled by using all the external fields capable of inducing the polarization of electrons in the metal. Here, an external director means an object capable of generating an electrostatic force.

Here, similarly to the phenomenon of electron / positive charge polarization in the conductor as a whole, electrons / positive charge polarization occurs in the metal layer (Cu) located in the electric field by the electric field generated by the external electrode. That is, electrons move to the surface of the metal layer (Cu) in the anode direction. Due to this phenomenon, the etching rate decreases in the metal near the anode and in the metal near the cathode, the electrons move to the metal surface and the etching rate decreases.

Figure 3, on the other hand, illustrates the local etching of a metal layer using the entirety of the present invention. As shown in FIG. 3, it is shown that the etching rate is changed by the electron / positive charge polarization in the metal layer Cu to be etched by the external electrode. Here, a cathode 321 and an anode 322 electrode made of platinum (Pt) are disposed, and a cathode electrode 321 is made of a rod model so as to locally form a metal layer 313 to be etched The metal layer Cu may be etched to expose the insulating layer 312 at a portion located close to the cathode electrode. In other words, electrons in the metal layer are repelled by the electrons in the negative (-) electrode in the portion located closer to the negative (-) electrode, thereby reducing the electron density and accelerating the etching.

Therefore, the local etching result can be obtained by selectively controlling the etching rate by using the polarization of the electron / positive charge through the external electrode.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is obvious that the modification or improvement is possible.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

110, 311, 313 --- metal layer
120 --- Etching resist layer
130, 312 --- insulation layer
140, 321, 322 --- Large All
330 --- Etching solution

Claims (7)

Preparing a substrate having a metal layer;
Forming an etching resist layer on the metal layer, the etching resist layer having an opening exposing a predetermined region of the metal layer;
Dipping the exposed region of the metal layer in an etchant; And
And etching the metal layer by disposing the entire body so as to be spaced apart from the metal layer by a predetermined distance.
The method according to claim 1,
Wherein the step of etching the metal layer by disposing the whole of the base adjusts the etching rate in accordance with the distance between the exposed metal layer and the one electrode of the whole of the induced mass.
The method according to claim 2,
(-) of the metal layer is induced by disposing a whole charged with positive (+) electrodes in the metal layer, thereby increasing the electron density and decreasing the etching rate.
The method of claim 2,
(-) is repelled when the metal layer is charged with a negative (-) electrode as a whole, thereby decreasing the electron density and increasing the etching rate.
The method according to claim 1,
Wherein the step of etching the metal layer by disposing the entire substrate comprises controlling the intensity of the electrical force of the entire major surface induced in the exposed metal layer to adjust the etching rate.
The method according to claim 1,
And etching the metal layer by disposing the entirety of the substrate, wherein the entire substrate is locally disposed on the exposed metal layer to selectively etch.
The method according to claim 1,
Wherein in the step of preparing the substrate having the metal layer, the substrate is a printed circuit board.

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