KR20190117201A - Apparatus for cleaning nozzle and apparatus for processing substrate comprising the same - Google Patents

Abstract

The present invention relates to a substrate processing apparatus capable of minimizing process defects. The substrate processing apparatus comprises: a nozzle used for supplying a processing liquid; a control unit for controlling the nozzle; a cleaning unit in which a cleaning liquid is accommodated and the nozzle is cleaned by the cleaning liquid; and an absorbent unit including an absorbent material for removing the cleaning liquid remaining in the nozzle after being cleaned by the cleaning liquid, wherein the control unit makes the nozzle non-contact with the absorbent material, but makes the nozzle to be close to the absorbent material so that the remaining cleaning liquid can be absorbed by the absorbent material by capillary action.

Description

Nozzle cleaning apparatus and substrate processing apparatus including the same {Apparatus for cleaning nozzle and apparatus for processing substrate comprising the same}

The present invention relates to a nozzle cleaning apparatus and a substrate processing apparatus including the same.

When manufacturing a semiconductor device or a display device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Here, the photographic process includes a coating, an exposure, and a developing process. A photoresist is applied onto the substrate (i.e., an application step), a circuit pattern is exposed on the substrate on which the photosensitive film is formed (i.e., an exposure step), and an exposed area of the substrate is selectively developed (i.e., a development step).

On the other hand, in a coating process, after a nozzle apply | coats a photosensitive liquid on a board | substrate, the tip of a nozzle is wash | cleaned using a cleaning liquid. This is to prevent the photosensitive liquid from sticking at the tip of the nozzle. However, the cleaning liquid may remain at the tip of the nozzle, and the remaining cleaning liquid may cause new process defects.

An object of the present invention is to provide a substrate processing apparatus capable of minimizing process defects by removing residual cleaning liquid.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the nozzle cleaning apparatus of the present invention for achieving the above object is a nozzle used for supplying the processing liquid; A controller for controlling the nozzle; A cleaning unit accommodating a cleaning liquid therein and the nozzle is cleaned by the cleaning liquid; And an absorbent part including an absorbent material for removing the cleaning liquid remaining in the nozzle after being cleaned by the cleaning liquid, wherein the controller makes the nozzle non-contact with the absorbent material, but the remaining cleaning liquid by capillary action. It is approached closely to the absorbent material so that it can be absorbed by the absorbent material.

The apparatus may further include a vision unit for checking the size of the remaining cleaning liquid.

The control unit may determine an access distance of the nozzle to the absorbent material based on the size of the remaining cleaning liquid checked using the non-vision unit. Specifically, the control unit compares the size of the remaining cleaning liquid with a reference size, and determines the approach distance of the nozzle to the absorbent material, wherein the reference size is the surface tension of the cleaning liquid, the tip shape of the nozzle, It is determined based on at least one of the materials of the nozzle.

The absorbent material may operate in a conveyor manner.

The absorbing unit may operate so that a new absorbent material may be used to remove the remaining cleaning liquid after a predetermined time or a predetermined number of times of use.

Alternatively, the absorbing unit may be operated such that, if the degree of contamination of the absorbent material in use is greater than the reference degree of contamination, the new absorbent material may be used to remove the remaining cleaning liquid.

One aspect of the substrate processing apparatus of the present invention for achieving the above object is a container for providing a processing space therein; A support unit disposed in the processing space and supporting the substrate; A processing liquid supply unit including a nozzle for supplying a processing liquid onto a substrate supported by the support unit; And a standby port positioned at one side of the container, in which the nozzle waits, wherein the standby port includes a cleaning part in which a cleaning liquid is received, and the nozzle is cleaned by the cleaning liquid, and cleaned by the cleaning liquid. And an absorbent portion including an absorbent material for removing the cleaning liquid remaining in the nozzle, wherein the nozzle is in non-contact but close proximity to the absorbent material such that the cleaning liquid remaining in the nozzle by the capillary phenomenon is transferred to the absorbent material. Is absorbed.

Specific details of other embodiments are included in the detailed description and the drawings.

1 is a schematic cross-sectional view for illustrating a substrate processing apparatus according to a first embodiment of the present invention.
2 is a schematic plan view for explaining a substrate processing apparatus according to a first embodiment of the present invention.
3 is a cross-sectional view for describing a standby port illustrated in FIGS. 1 and 2.
4 is a conceptual diagram illustrating a cleaning process of the nozzle shown in FIG. 3.
5 is a view for explaining a substrate processing apparatus according to a second embodiment of the present invention.
6 is a view for explaining a substrate processing apparatus according to a third embodiment of the present invention.
7 is a plan view illustrating a substrate processing apparatus according to a fourth embodiment of the present invention.
8 is a cross-sectional view taken from the direction AA of FIG. 7.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms. The embodiments of the present invention make the posting of the present invention complete and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

When elements or layers are referred to as "on" or "on" of another element or layer, intervening other elements or layers as well as intervening another layer or element in between. It includes everything. On the other hand, when a device is referred to as "directly on" or "directly on" indicates that no device or layer is intervened in the middle.

The spatially relative terms " below ", " beneath ", " lower ", " above ", " upper " It may be used to easily describe the correlation of a device or components with other devices or components. Spatially relative terms are to be understood as including terms in different directions of the device in use or operation in addition to the directions shown in the figures. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

Although the first, second, etc. are used to describe various elements, components and / or sections, these elements, components and / or sections are of course not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, the first device, the first component, or the first section mentioned below may be a second device, a second component, or a second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in describing the present invention with reference to the accompanying drawings, the same or corresponding elements are denoted by the same reference numerals, and the same reference numerals will be used. The description will be omitted.

1 and 2 are schematic cross-sectional views and schematic plan views for explaining a substrate processing apparatus according to a first embodiment of the present invention, respectively. 3 is a cross-sectional view for describing a standby port illustrated in FIGS. 1 and 2. 4 is a conceptual diagram illustrating a cleaning process of the nozzle shown in FIG. 3.

1 and 2, the substrate processing apparatus 800 according to the first embodiment of the present invention includes a container 850, a support unit 820, a lifting unit 880, and a processing liquid supply unit 890. And a standby port 900. The nozzle cleaning device is provided in the standby port 900.

The container 850 provides a processing space therein. The container 850 is provided to have a cylindrical shape with an open top. The container 850 includes a recovery container 860 and a guide wall 870. The recovery container 860 is provided to have an annular ring shape surrounding the support unit 820. The recovery container 860 includes a first inclined wall 862, a vertical wall 864, and a bottom wall 866. The first inclined wall 862 is provided to surround the support unit 820. The first inclined wall 862 is provided to be inclined downward in a direction away from the support unit 820. The vertical wall 864 extends downward from the bottom of the first inclined wall 862. The vertical wall 864 may have a longitudinal direction perpendicular to the ground. The bottom wall 866 extends in a vertical direction from the bottom of the vertical wall 864. The bottom wall 866 is provided horizontally in a direction toward the central axis of the support unit 820. The recovery line 868 is connected to the bottom wall 866. The recovery line 868 discharges the treatment liquid introduced into the recovery container 860 to the outside. The discharged treatment liquid can be reused, for example, via a treatment liquid regeneration system (not shown). Recovery line 868 may be located between guide wall 870 and vertical wall 864 at bottom wall 866.

Guide wall 870 is positioned between first inclined wall 862 and bottom wall 866. The guide wall 870 is provided in an annular ring shape surrounding the support unit 820 inside the recovery container 860. The guide wall 870 includes a second inclined wall 872 and an interwall 874. The second inclined wall 872 is provided to surround the support unit 820. The second inclined wall 872 is provided to be inclined downward in a direction away from the support unit 820. The space between the second inclined wall 872 and the first inclined wall 862 is provided as a recovery space 865 in which the treatment liquid is recovered. An upper end of the second inclined wall 872 may be provided to coincide with an upper end of the first inclined wall 862. The interwall 874 connects the second inclined wall 872 and the bottom wall 866. The interwall 874 extends downward from the top of the second inclined wall 872.

The lifting unit 880 lifts and moves the container 850 in the vertical direction. The elevating unit 880 adjusts the relative height between the vessel 850 and the support unit 820. The lifting unit 880 includes a bracket 882, a moving shaft 884, and a driver 886. The bracket 882 is fixed to the outer side of the first inclined wall 862. The bracket 882 is fixedly coupled to a moving shaft 884 that is movable in the vertical direction by the driver 886.

The processing liquid supply unit 890 supplies the processing liquid to the wafer W loaded in the support unit 820. The processing liquid supply unit 890 includes a moving member 895, an arm 893, and a nozzle 894. The nozzle 894 is coupled to the end of the arm 893. The moving member 895 may be located at one side of the container 850. For example, the arm 893 has a bar shape in which the longitudinal direction thereof faces the second direction, and the movable member 895 may linearly move the arm 893 in a first direction different from the second direction. It is not limited. As the moving member 895 moves, the nozzles 894 coupled to the arms 893 move together. The moving member 895 moves the nozzle 894 to the process position and the standby position. The process position here is the position where the nozzle 894 is opposed to the vessel 850, and the standby position is the position where the nozzle 894 is waiting at the standby port 900. For example, the moving member 895 is illustrated in a guide rail shape, but is not limited thereto. Optionally, the moving member 895 may be provided as a support shaft for swinging the arm 893 and the nozzle 894. In addition, the movable member 895 can move the arm 893 and the nozzle 894 up and down. In addition, the treatment liquid may be a photosensitive liquid. The photosensitive liquid may be a photoresist, for example, an I-Line resist liquid, a KrF resist liquid, an ArF resist liquid, or the like. Additionally, the treatment liquid supply unit 890 may further include a nozzle 894 for supplying an organic solvent for diffusion of the treatment liquid.

The standby port 900 may be located on the other side of the container 850. In one example, the vessel 850 and the standby port 900 may be arranged sequentially. The standby port 900 may be an apparatus in which a nozzle 894 for supplying a processing liquid onto the wafer W is waiting and cleans the nozzle 894.

A process of processing the wafer W using the substrate processing apparatus 800 will be described. When the wafer W is placed on the support unit 820, the nozzle 894 is moved to the process position. The wafer W is rotated by the support unit 820, and the nozzle 894 supplies the processing liquid to, for example, the center region of the wafer. The processing liquid diffuses from the center region to the edge region by the centrifugal force of the wafer W. When the treatment liquid application is completed, the nozzle 894 is moved to the standby position (i.e., the standby port 900). At the standby port 900, the nozzle 894 is cleaned.

Here, the standby port 900 will be described with reference to FIG. 3. The standby port 900 may include a cleaning unit 910, an absorption unit 990, a cleaning liquid supply member 970, a control unit 999, and the like.

In detail, the cleaning unit 910 contains the cleaning liquid TL, and the nozzle 894 is cleaned using the cleaning liquid TL. The cleaning liquid TL may be any liquid capable of removing the treatment liquid, and may be, for example, a thinner liquid.

The cleaning unit 910 includes a cleaning chamber 961 that can accommodate the cleaning liquid TL. The cleaning chamber 961 includes an enlarged open opening 963 for accommodating the nozzles 894 and the arms 893, a cylindrical body 964 communicating with a lower end of the enlarged open opening 963, and a cylindrical body ( And a tapered funnel portion 965 narrowing downwardly in communication with the lower end of 964. Further, a liquid discharge chamber 967 is provided at the lower end of the funnel portion 965 of the cleaning chamber 961 to store the cleaning liquid TL and the like through the communication path 966. In addition, the side wall of the funnel portion 965 and / or the cylindrical body 964 includes at least one supply port 968 for supplying the cleaning liquid TL. The cleaning liquid TL is supplied into the cleaning chamber 961 through the supply port 968 from the cleaning liquid supply member 970.

As described above, the arm 893 and the nozzle 894 can perform at least one of vertical movement, rotational movement, and parallel movement by the movable member 895.

In addition, the controller 999 may control the cleaning liquid supply member 970 and / or the moving member 895. The control unit 999 can control the operation of the nozzle 894 by controlling the moving member 895, and control the operation of the cleaning unit 910 by controlling the cleaning liquid supply member 970.

In addition, the absorber 990 includes an absorbent material for removing the cleaning liquid TL remaining in the nozzle 894 after the nozzle 894 is cleaned by the cleaning liquid TL.

Here, the properties required for the absorbent material are high absorbency and chemical resistance to the cleaning liquid (TL) (and / or treatment liquid). In addition, the absorbent material may include not only 15 times or more of the fluid, for example, the weight of the polymer material itself, but also ensure insolubility for the liquid (based on the superabsorbent polymer). Such an absorbent material may be, for example, a polymer material obtained by laminating at least one of polyester, which is a universal wiper material, PVA or PAN, cellulose, and starch, which are superabsorbent materials.

Here, with reference to FIG. 4, the washing | cleaning process of the nozzle 894 is demonstrated.

Referring to FIG. 4A, after the nozzle 894 is supplied with the processing liquid onto the substrate, the nozzle 894 is used to remove the processing liquid (for example, the resist liquid) buried in the nozzle 894. Is immersed in the cleaning liquid (TL). Here, the immersion method may vary. For example, after the cleaning liquid TL is contained in the cleaning chamber 961, the nozzle 894 may be immersed in the cleaning liquid TL. Alternatively, after the nozzle 894 is positioned inside the cleaning chamber 961, the nozzle 994 can be cleaned by supplying the cleaning liquid TL to the interior of the cleaning chamber 961 through a spray method / vortex method or the like.

However, after washing the nozzle 894 with the cleaning liquid TL in this manner, the cleaning liquid TLB may remain in the nozzle 894. Thus, the residual cleaning liquid TLB may fall later on the substrate to cause defects. That is, there is a limit to removing the cleaning liquid (TLB) remaining by natural evaporation.

4 (b) and 4 (c), in the first embodiment of the present invention, the cleaning liquid TLB remaining in the nozzle 894 may be removed by using the absorber 990.

Specifically, the controller 999 of FIG. 3 brings the nozzle 894 close to the absorbent material. In particular, the controller 999 makes the nozzle 894 non-contact with the absorbent material, but closes the absorbent material so that the remaining cleaning liquid (TLB) may be absorbed by the absorbent material by capillary action.

If the nozzle 894 is in contact with the absorbent material to remove the residual cleaning liquid (TLB) of the nozzle, this may be another cause of process failure. Because the absorbent material used multiple times may be contaminated, the contaminant may be transferred to the nozzle 894 when the nozzle 894 contacts the absorbent material. Therefore, in the first embodiment of the present invention, the cleaning solution (TLB) remaining by the capillary phenomenon can be absorbed by the absorbent material without bringing the nozzle 894 into contact with the absorbent material (Fig. 4 (c)). (Sign 990a).

On the other hand, how much the nozzle 894 should approach the absorbent material (access distance CL) may vary depending on the size of the remaining cleaning liquid TLB. Specifically, the characteristics of the cleaning liquid TL and the nozzle 894 used (for example, at least one of the surface tension of the cleaning liquid TL, the tip shape of the nozzle 894, and the material of the nozzle 894). Accordingly, the size of the cleaning liquid TLB remaining at the tip of the nozzle 894 may vary. Therefore, the size of the residual cleaning liquid TLB is estimated in consideration of the characteristics of the cleaning liquid TL and the nozzle 894 used, and based on the estimated size of the residual cleaning liquid TLB, the absorbent material of the nozzle 894 is absorbed. It is possible to determine the approach distance CL of. For example, the approach distance CL may be less than 1 mm.

In addition, if necessary, the controller 999 may move the nozzle 894 up and down two or more times on the absorbent material. When the size of the residual cleaning liquid TLB is large, the residual cleaning liquid TLB can be easily separated from the nozzle 894 by the vertical movement of the nozzle 894.

5 is a view for explaining a substrate processing apparatus according to a second embodiment of the present invention. For convenience of explanation, the description will be mainly given on the points different from those described with reference to FIGS. 1 to 4.

Referring to FIG. 5, the absorbent material of the absorber 990 may operate in a conveyor manner (ie, roll to roll). Absorbents used multiple times may be contaminated. In addition, the absorbent material used a plurality of times may have a high saturation of the cleaning liquid TL, and thus may reduce the absorption rate of the residual cleaning liquid TLB. Thus, by operating the absorbent material in a conveyor manner, it is possible to maintain a certain level of cleanliness and absorption rate.

As shown, the absorbent material can be divided into a number of sections 990b and 990c. Section 990b is the absorbent material currently in use and section 990c means the new absorbent material. The absorbent portion 990 may be operated to rotate in a conveyor fashion so that the new absorbent material faces the nozzle 894.

For example, after a predetermined time or a predetermined number of times of use, the new section 990c may be operated to remove the remaining cleaning liquid TLB.

Alternatively, if the degree of contamination of the absorbent material in use is greater than the reference degree of contamination, the new section 990c can be operated to remove the remaining cleaning liquid TLB.

6 is a view for explaining a substrate processing apparatus according to a third embodiment of the present invention. For convenience of explanation, the description will be given focusing on differences from those described with reference to FIGS. 1 to 5.

Referring to FIG. 6, in the substrate processing apparatus according to the third embodiment of the present disclosure, the access distance CL of the nozzle 894 to the absorbent material may be adjusted based on the size of the remaining cleaning liquid TLB. For example, the size of the remaining washing liquid TLB can be checked in real time, and the approach distance CL can be adjusted in real time.

For this operation, the substrate processing apparatus according to the third embodiment of the present invention further includes a vision unit 899. The vision unit 899 is illustrated as a camera, but is not limited thereto. That is, the vision unit 899 may be anything as long as it can photograph the tip of the nozzle 894. In addition, the vision unit 899 is illustrated as being installed in the vertical arm 893a, but is not limited thereto. That is, the vision unit 899 may be installed anywhere where the tip of the nozzle 894 may be photographed.

In FIG. 6, the case where the vision unit 899 photographs the tip of the nozzle 894 using the reflective member 898 will be described.

The reflecting member 898 guides the photographing direction so that the vision unit 899 photographs the photographing area. The photographing direction of the vision portion 899 may be converted by the reflecting member 898 to face in a direction parallel to the longitudinal direction of the arm 883 in the vertical upward direction. Accordingly, the vision unit 899 may acquire an image of the state of the nozzle 894 or the state of the processing liquid discharged from the nozzle 894. In addition, after the cleaning operation of the nozzle 894, an image of the state of the cleaning liquid TLB remaining in the nozzle 894 (for example, the size of the cleaning liquid TLB) can be obtained. The reflective member 898 is provided on the vertical arm 893a. The reflective member 898 is located between the arm 893 and the vision portion 899. Reflecting member 898 is located closer to arm 883 than to vertical section 899a at vertical arm 893a. In example embodiments, the photographing area may include at least one of a tip of the nozzle 894, a region between the tip of the nozzle 894 and the substrate W, and an internal area of the nozzle 894. The reflective member 898 may be a mirror.

Since the vision portion 899 and / or the reflective member 898 are provided in the vertical arm 893a, the influence of the vibration transmitted from the nozzle 894 and the arm 893 can be minimized. In addition, this configuration can minimize equipment sagging due to the weight of the vision portion 899 and / or the reflective member 898.

Although not separately illustrated, the lighting member 930 may provide illumination such that the vision unit 899 photographs the state of the nozzle 894 and the liquid state discharged from the nozzle 894.

The controller 999 determines the state of the nozzle 894 and the liquid state by comparing the photographed image obtained from the vision unit 899 with the reference image.

In detail, when the photographing area includes the tip of the nozzle 894, the controller 999 may determine the formation of the processing liquid and the flow of the processing liquid in the nozzle 894. In addition, the control unit 999 compares the size of the cleaning liquid TLB remaining at the tip of the nozzle 894, checked by the vision unit 899, with the reference size, and the access distance to the absorbent material of the nozzle 894. (CL) can be determined. The reference size is based on the characteristics of the cleaning liquid TL and the nozzle 894 (eg, at least one of the surface tension of the cleaning liquid TL, the tip shape of the nozzle 894, and the material of the nozzle 894). Can be determined. In addition, when the photographing area includes an area between the tip of the nozzle 894 and the substrate W, the controller 999 may determine that the processing liquid is disconnected while the processing liquid is discharged.

As described above, in the substrate processing apparatus according to the third embodiment of the present invention, the state of the cleaning liquid TLB remaining in the nozzle 894 after the cleaning operation of the nozzle 894 through the vision unit 899 ( For example, an image of the size of the cleaning liquid (TLB) is obtained. According to the size of the cleaning liquid TLB remaining in the nozzle 894, the approach distance CL of the nozzle 894 to the absorbent material can be adjusted.

For example, when the size of the remaining cleaning liquid TLB is included in the range of the reference size (for example, ± 10% of the reference size), the approach distance CL may be 1 mm. If the size of the remaining cleaning liquid TLB is larger than the reference size, the approach distance CL can be made larger than 1 mm. In contrast, when the size of the remaining cleaning liquid TLB is smaller than the reference size, the approach distance CL can be made closer than 1 mm. By adjusting the approach distance CL in this way, the cleaning liquid TLB remaining more efficiently can be removed.

7 is a plan view illustrating a substrate processing apparatus according to a fourth embodiment of the present invention. FIG. 8 is a cross-sectional view taken from the direction A-A of FIG. 7.

7 and 8, the substrate processing facility includes a load port 100, an index module 200, a first buffer module 300, an application and development module 400, a second buffer module 500, and an exposure. Post-processing module 600, and interface module 700. Load port 100, index module 200, first buffer module 300, coating and developing module 400, second buffer module 500, pre-exposure processing module 600, and interface module 700 Are sequentially arranged in one direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( The direction in which 700 is disposed is referred to as the X direction, the direction perpendicular to the X direction when viewed from the top, is referred to as the Y direction, and the direction perpendicular to the X direction and the Y direction, respectively, is referred to as the Z direction.

The wafer W is moved in the state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door in front may be used.

The load port 100 has a mounting table 120 on which a cassette 20 containing wafers W is placed. The mounting table 120 is provided in plurality, and the mounting tables 200 are arranged in a line along the Y direction.

The index module 200 transfers the wafer W between the cassette 20 placed on the mounting table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in the shape of an empty rectangular parallelepiped, and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a height lower than that of the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 has a structure capable of four-axis driving so that the hand 221 that directly handles the wafer W is movable and rotated in the X, Y, and Z directions. Index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. Arm 222 is provided in a stretchable and rotatable structure. The support 223 is disposed in the longitudinal direction along the Z direction. Arm 222 is coupled to support 223 to be movable along support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided such that its longitudinal direction is disposed along the Y direction. The pedestal 224 is coupled to the guide rail 230 to be linearly movable along the guide rail 230. In addition, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located in the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed along the Z direction from below. The first buffer 320 is located at a height corresponding to the application module 401 of the application and development module 400 described later, and the second buffer 330 and the cooling chamber 350 are applied to the application and development module (described later). It is located at a height corresponding to the developing module 402 of 400. The first buffer robot 360 is positioned to be spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 in a Y direction by a predetermined distance.

The first buffer 320 and the second buffer 330 temporarily store a plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed in the housing 331 and are spaced apart from each other along the Z direction. One support W is placed on each support 332. The first buffer 320 has a structure generally similar to that of the second buffer 330. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to an example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixed to the arm 362. Arm 362 is provided in a stretchable structure to allow hand 361 to move along the Y direction. The arm 362 is coupled to the support 363 so as to be linearly movable in the Z direction along the support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer in the up or down direction. The first buffer robot 360 may simply be provided such that the hand 361 is only biaxially driven along the Y and Z directions.

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and cooling means 353 for cooling the wafer W. As shown in FIG. As the cooling means 353, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) that positions the wafer W on the cooling plate 352.

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The application and development module 400 has an application module 401 and a development module 402. The application module 401 and the developing module 402 are arranged to partition into each other in layers. In one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photoresist such as a photoresist to the wafer W, and a heat treatment process such as heating and cooling of the wafer W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the Y direction. Therefore, the resist coating chamber 410 and the baking chamber 420 are positioned to be spaced apart from each other in the Y direction with the transfer chamber 430 interposed therebetween. The resist application chamber 410 and the baking chamber 420 are provided in plurality.

The apparatus described with reference to FIGS. 1 to 6 may be applied to the resist coating chamber 410. That is, the resist coating chamber 410 has a structure in which a nozzle coated with a processing liquid (resist) is cleaned using the cleaning liquid TL, and an absorbent material is used to remove the cleaning liquid TLB remaining in the cleaned nozzle. Can be applied.

The transfer chamber 430 is positioned parallel to the first buffer 320 of the first buffer module 300 in the X direction. An applicator robot 432 and a guide rail 433 are positioned in the transfer chamber 430. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 may include the baking chambers 420, the resist coating chambers 400, the first buffer 320 of the first buffer module 300, and the first of the second buffer module 500 described later. The wafer W is transferred between the cooling chambers 520. The guide rail 433 is disposed so that its longitudinal direction is parallel to the X direction. The guide rail 433 guides the applicator robot 432 to move linearly in the X direction. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. Arm 435 is provided in a flexible structure to allow hand 434 to move in the horizontal direction. The support 436 is provided such that its longitudinal direction is disposed along the Z direction. Arm 435 is coupled to support 436 so as to be linearly movable in the Z direction along support 436. The support 436 is fixedly coupled to the pedestal 437, and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist application chambers 410 all have the same structure. However, the types of photoresist used in each resist coating chamber 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 is provided as a substrate processing apparatus for applying a photo resist on the wafer (W).

The bake chamber 420 heat-treats the wafer (W). For example, the bake chambers 420 may be a prebake process or a photoresist that heats the wafer W to a predetermined temperature and removes organic matter or moisture from the surface of the wafer W before applying the photoresist. A soft bake process or the like performed after coating on W) is performed, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with cooling means such as cooling water or thermoelectric elements. The heating plate 422 is also provided with heating means such as hot wires or thermoelectric elements. The cooling plate 421 and the heating plate 422 may be provided in one bake chamber 420, respectively. Optionally, some of the baking chambers 420 may have only a cooling plate 421 and others may have only a heating plate 422.

The developing module 402 is a developing process of removing a part of the photoresist by supplying a developing solution to obtain a pattern on the wafer W, and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process. It includes. The developing module 402 has a developing chamber 460, a baking chamber, and a conveying chamber.

The second buffer module 500 is provided as a passage through which the wafer W is transported between the application and development module 400 and the pre-exposure before and after processing module 600. In addition, the second buffer module 500 performs a predetermined process on the wafer W, such as a cooling process or an edge exposure process. The second buffer module 500 controls the frame 510, the buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560. Have The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located in the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the developing module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a line along the Z direction. When viewed from the top, the buffer 520 is disposed along the X direction with the transfer chamber 430 of the application module 401. The edge exposure chamber 550 is spaced apart from the buffer 520 or the first cooling chamber 530 by a predetermined distance in the Y direction.

The second buffer robot 560 transports the wafer W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform subsequent processing on the wafers W on which the processing is performed in the coating module 401. The first cooling chamber 530 cools the wafer W on which the process is performed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes the edge of the wafers W on which the cooling process is performed in the first cooling chamber 530. The buffer 520 temporarily stores the wafer W before the wafers W having been processed in the edge exposure chamber 550 are transferred to the pretreatment module 601 described later. The second cooling chamber 540 cools the wafers W before the wafers W having been processed in the post-processing module 602 described later are transferred to the developing module 402. The second buffer module 500 may further have a buffer added to a height corresponding to the developing module 402. In this case, the wafers W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402.

When the exposure apparatus 790 performs the liquid immersion exposure process, the exposure before and after processing module 600 may process a process of applying a protective film that protects the photoresist film applied to the wafer W during the liquid immersion exposure. In addition, the pre and post-exposure processing module 600 may perform a process of cleaning the wafer W after the exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre-exposure treatment module 600 may process the post-exposure bake process.

The pre- and post-exposure processing module 600 includes a pretreatment module 601 and a post-processing module 602. The pretreatment module 601 performs a process of processing the wafer W before performing the exposure process, and the post-processing module 602 performs a process of processing the wafer W after the exposure process. The pretreatment module 601 and the aftertreatment module 602 are arranged to partition into one another. In one example, the pretreatment module 601 is located on top of the aftertreatment module 602. The pretreatment module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film applying chamber 610, a baking chamber 620, and a transfer chamber 630. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The pretreatment robot 632 is located in the transfer chamber 630. The aftertreatment module 602 has a cleaning chamber, a post exposure bake chamber, and a conveyance chamber.

The interface module 700 transfers the wafer W between the pre-exposure processing module 600 and the exposure apparatus 790. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located in the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and disposed to be stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601, and the second buffer 730 is disposed at a height corresponding to the postprocessing module 602.

The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730, and the exposure apparatus 790. The first buffer 720 temporarily stores the wafers W processed in the pretreatment module 601 before moving to the exposure apparatus 790. The second buffer 730 temporarily stores the wafers W processed in the exposure apparatus 790 before moving to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed in the housing 721 and are spaced apart from each other along the Z direction. One support W is placed on each support 722.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. You will understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

800: substrate processing apparatus 820: support unit
850 container 880 lifting unit
890: treatment liquid supply unit 893: arm
894: nozzle 898: reflective member
899: Vision 900: Standby port
910: cleaning unit 990: absorption unit
999: control unit TL: cleaning liquid
TLB: Cleaning liquid remaining in the nozzle

Claims (8)

Nozzles used for processing liquid supply;
A controller for controlling the nozzle;
A cleaning unit accommodating a cleaning liquid therein and the nozzle is cleaned by the cleaning liquid; And
After the cleaning by the cleaning liquid, including an absorbent portion including an absorbent material for removing the cleaning liquid remaining in the nozzle,
And the control unit makes the nozzle non-contact with the absorbent material, and closes the absorbent material so that the remaining cleaning liquid can be absorbed by the absorbent material by capillary action. The method of claim 1,
And a vision unit for checking the size of the remaining cleaning liquid. The method of claim 2,
And the control unit determines an access distance of the nozzle to the absorbent material based on the size of the remaining cleaning liquid checked using the non-vision unit. The method of claim 3,
The control unit compares the size of the remaining cleaning liquid with a reference size to determine the approach distance of the nozzle to the absorbent material,
And the reference size is determined based on at least one of the surface tension of the cleaning liquid, the tip shape of the nozzle, and the material of the nozzle. The method of claim 1,
And the absorbent material operates in a conveyor manner. The method of claim 5, wherein the absorbing portion,
And a new absorbent material can be used for removal of the remaining cleaning liquid after a predetermined time or a predetermined number of times of use have elapsed. The method of claim 5, wherein the absorbing portion,
And when the degree of contamination of the absorbent material in use is greater than the reference degree of contamination, the new absorbent material is operative to be used for removal of the remaining cleaning liquid. A container providing a processing space therein;
A support unit disposed in the processing space and supporting the substrate;
A processing liquid supply unit including a nozzle for supplying a processing liquid onto a substrate supported by the support unit; And
Located on one side of the container, the nozzle has a standby port for waiting, the standby port is
A cleaning unit in which a cleaning liquid is contained, and the nozzle is cleaned by the cleaning liquid;
And an absorbent part including an absorbent material for removing the cleaning liquid remaining in the nozzle after being washed by the cleaning liquid.
And the nozzle is in non-contact but close proximity to the absorbent material such that the cleaning liquid remaining in the nozzle is absorbed by the absorbent material by capillary action.

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