KR20130022055A - Light emitting package and light emitting apparatus having the same - Google Patents

Abstract

PURPOSE: A light emitting element package and a light emitting device including the same are provided to prevent moisture and an interlayer short of a light emitting structure by forming an insulation layer on the surface of a light emitting device. CONSTITUTION: A body(11) includes a cavity(15). A first lead frame(30) and a second lead frame(40) are arranged in the cavity of the body. A heat radiation frame(20) is arranged between the first lead frame and the second lead frame. A light emitting device(101) is formed on the first lead frame and the second lead frame. A first lead part(33) and a second lead part(43) are arranged on the side of the body. A first heat radiation unit(24) is bent from the heat radiation frame.

Description

LIGHT EMITTING PACKAGE AND LIGHT EMITTING APPARATUS HAVING THE SAME}

An embodiment relates to a light emitting device.

A light emitting diode (LED) may form a light emitting source using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

Such a light emitting diode is packaged and used as a light emitting device package that emits various colors, and the light emitting device package is used as a light source in various fields such as a lighting indicator, a color display, and an image display for displaying a color.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device capable of dissipating heat by contacting a heat dissipation plate on a non-polar heat dissipation portion disposed on an upper surface of a light emitting device package.

An embodiment includes a body having a cavity; A first lead frame and a second lead frame disposed in the cavity of the body; A heat dissipation frame disposed between the first lead frame and the second lead frame disposed in the cavity; At least one light emitting device on the first lead frame and the second lead frame; A first lead portion and a second lead portion disposed on the side portion of the body; And a first heat dissipation part bent from the heat dissipation frame between the first lead part and the second lead part of the body.

According to the present invention, the embodiment can improve the heat radiation efficiency of the light emitting device package.

The embodiment can improve heat dissipation efficiency in the side view type light emitting device package.

The embodiment can improve the reliability of the light emitting device package and the light emitting device having the same.

1 is a view showing a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of the light emitting device package of FIG. 1.
3 is a cross-sectional view taken along the BB side of the light emitting device package of FIG. 1.
FIG. 4 is a view of the second side surface of the light emitting device package of FIG. 1.
FIG. 5 is a view of the first side surface of the light emitting device package of FIG. 1.
6 is an exploded view of the lead frame of FIG. 1.
FIG. 7 is an exploded view of another embodiment of the lead frame of FIG. 1. FIG.
8 is a view illustrating a light emitting device of the light emitting device package of FIG. 1.
9 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. In addition, the size of each component does not necessarily reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing a light emitting device package according to an embodiment, FIG. 2 is a sectional view taken along the AA side of the light emitting device package of FIG. 1, FIG. 3 is a sectional view taken along the BB side of the light emitting device package of FIG. FIG. 5 is a view from the second side of the light emitting device package of FIG. 5, and FIG. 5 is a view from the first side of the light emitting device package of FIG. 1, and FIG. 6 is an exploded view of the lead frame of FIG. 1.

1 to 6, the light emitting device package 100 may be implemented as a side light emitting package, and may be variously applied as a light source such as a light source and an illumination field of a liquid crystal display such as a mobile phone and a portable computer. have.

The light emitting device package 100 includes a body 11 having a cavity 15, first and second lead frames 30 and 40 in the cavity 15, and first and second lead frames 30 and 40. Bent from the light emitting element 101, the first and second lead frames 30 and 40 and the heat dissipation frame 20 on the heat dissipation frame 20, the first and second lead frames 30 and 40. And bent from the first lead portion 33 and the second lead portion 43 and the heat dissipation frame 20 disposed on the second side surface portion S2 of the body 11 to form a second portion of the body 11. It includes a first heat dissipation portion 24 disposed on the side surface portion (S2).

The body 11 includes a printed circuit board (PCB), silicon, silicon carbide (SiC), aluminum nitride (AlN), poly phthalamide (PPA), and polymer liquid crystal (Liquid). Crystal Polymer) may be formed in at least one, and the like, but is not limited thereto. In addition, the body 11 may be formed by injection molding a material such as polyphthalamide (PPA) into an injection structure, using an etching method, or may be manufactured as a printed circuit board, but is not limited thereto.

2 to 5, the body 11 includes a reflector 12 and a support 13, and the reflector 12 includes a cavity 15 having an open upper portion. 13 is formed integrally with the reflector 12 under the reflector 12. The first lead frame 30, the heat dissipation frame 20, and the second lead frame 40 disposed on the bottom of the cavity 15 are disposed between the reflective part 12 and the support part 13.

An open cavity 15 is formed in the front portion S0 of the body 11, and the cavity 15 may be formed at a predetermined depth and a predetermined shape, and an upper side thereof may be a light emission area. 2 and 3, the circumference of the cavity 15 may be inclined or perpendicular to the bottom of the cavity 15, but is not limited thereto.

The second side surface portion S2 of the body 11 is a surface orthogonal to the surface on which the cavity 15 is formed, and is a region to be mounted on the substrate, and the first side surface portion S1 is an area opposite to the second side surface portion S2. to be. The third side portion S3 and the fourth side portion S4 are side portions disposed in the longitudinal direction of the cavity 15 and disposed on opposite sides thereof. The cavity 15 has a length longer than the length of the region disposed between the third side portion S3 and the fourth side portion S4, the length of the region disposed between the second side portion S2 and the first side portion S1. It may be formed, but not limited thereto.

A heat dissipation frame 20 is disposed between the first and second lead frames 31 and 41 at the center of the bottom of the cavity 15, and the first and second lead frames 31 and 41 are formed in the cavity ( 15) are placed on both sides of the floor.

The first and second lead frames 30 and 40 and the heat dissipation frame 20 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), and chromium (Cr). ), Tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P) may include at least one, and may be formed of a single metal layer or a multilayer metal layer.

The first lead frame 30 is spaced apart from the heat dissipation frame 20 on one side of the cavity 15, and the second lead frame 40 is disposed on the other side of the cavity 15. 20) and spaced apart.

The first lead frame 30 includes an upper surface portion 31 on which the light emitting chip 101 is disposed, and a first lead portion 33 as shown in FIG. 6, and the first lead portion 33 includes the first lead portion 33. It is bent from the lead frame 30 to the second side portion S2 of the body 11 through the body 11 and disposed substantially parallel to the second side portion S2 of the body 11. The first lead part 33 may be in close contact with one side of the support part 13 of the body 11. In addition, the first lead frame 30 further includes a second heat dissipation part 34 that is bent into the second side part S2 by being spaced apart from the first lead part 33 as illustrated in FIG. 6. The heat dissipation part 34 and the first lead part 33 may be bent separately from each other from the upper surface part 31. Meanwhile, the bent area 32 of the upper surface portion 31, the first lead portion 33, and the second heat dissipation portion 34 may be formed by the first lead portion 33 and the second heat dissipation portion 34. It may have a width smaller than the width.

The second lead frame 40 includes a second lead portion 43 as shown in FIG. 6, and the second lead portion 43 penetrates the body 11 from the second lead frame 40. The second side portion S2 of the body 11 is bent and disposed in parallel with the second side portion S2 of the body 11. The second lead part 43 may be in close contact with one side of the support part 13 of the body 11. In addition, the second lead frame 40 further includes a third heat dissipation part 44 bent to the second side part S2 by being spaced apart from the second lead part 43, and the third heat dissipation part 44. ) And the second lead portion 43 may be bent separately from each other from the upper surface portion (41). Meanwhile, the bent region 42 of the upper surface portion 41, the second lead portion 43, and the third heat dissipation portion 44 may be formed by the second lead portion 43 and the third heat dissipation portion 44. It may have a width smaller than the width.

The heat dissipation frame 20 includes an upper surface portion 21 and a first heat dissipation portion 24 of the bottom surface of the cavity 15, and the second side surface portion S2 of the body 11 at the bottom of the cavity 15. Penetrates through. The first heat dissipation part 24 is bent from the heat dissipation frame 20 to the second side part S2 of the body 11, and is substantially on the second side part S2 with the second side part S2. Arranged in parallel.

The first heat dissipation part 21 of the heat dissipation frame 20 is in close contact with the support part 13 which is the second side part S2 of the body 11 and is formed with an area substantially equal to the area of the support part 13. Can be. The first heat dissipation part 24 and the bent region 22 of the upper surface part 21 of the heat dissipation frame may have a width smaller than the width of the first heat dissipation part 24.

The first to third heat dissipation parts 24, 34, and 44 are disposed on the same plane as the first lead part 33 and the second lead part 43. Accordingly, the plurality of heat dissipation parts 24, 34, and 44 are disposed on the second side surface part S2 bonded to the substrate to ensure heat dissipation.

The heat dissipation frame 20 is a terminal having a non-polarity, and since the heat dissipation frame 20 is not a power path, heat dissipation may be more effectively performed.

On the other hand, as shown in Figure 7, the upper surface portion 21 of the heat dissipation frame 20 may further include a plurality of uneven parts on the side, bent region (22, 32, 42) of each frame (20, 30, 40) A plurality of holes 26, 36, 46 may be formed in the hole.

A portion of the body 11 is disposed in the holes 26, 36, 46. Therefore, the adhesion between the heat dissipation frame 20 and the body 11 may be improved according to the uneven structure and the holes 26, 36, and 46.

The light emitting device 101 may be disposed on the first and second lead frames 30 and 40, respectively, and may be connected to the heat dissipation frame 20 by a wire 105. The light emitting device 101 may be driven by power supplied from the first lead frame 30 and the second lead frame 40, and may be effectively radiated by the heat radiating frame 20.

The light emitting device 101 may selectively emit light in a range of visible light to ultraviolet light, for example, a colored LED chip such as a red LED chip, a blue LED chip, a green LED chip, a yellow green LED chip, or the like. It may optionally include. In addition, one or a plurality of light emitting devices 101 may be disposed in the cavity 15, and the light emitting devices 101 are connected to each other by a wire 105, but the lead frames 30 and 40 are respectively illustrated. Can be connected with wires respectively. The light emitting device 101 may include a compound semiconductor layer of Group II to Group VI elements, for example, a Group III-V compound semiconductor layer.

2 and 3, a molding member 61 is disposed in the cavity 15 of the body 11, and the molding member 61 includes a light transmissive resin layer such as silicon or epoxy, and is formed in a single layer or a multilayer. It can be formed as. The molding member 61 or the light emitting device 101 may include a phosphor for changing the wavelength of the light emitted, and the phosphor excites a portion of the light emitted from the light emitting device 101 to It will emit light. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 61 may be formed in a flat shape, concave shape, convex shape and the like, but is not limited thereto.

A lens may be further formed on an upper portion of the body 11, and the lens may include a concave or / and convex lens structure, and may provide a light distribution of light emitted from the light emitting device package 100. I can regulate it.

A semiconductor device such as a light receiving device or a protection device may be mounted on the body 11 or any one lead frame, and the protection device may be implemented as a thyristor, a zener diode, or a transient voltage suppression (TVS). The zener diode protects the light emitting device from electro static discharge (ESD).

8 is a view illustrating a light emitting device of the light emitting device package of FIG. 1.

Referring to FIG. 8, the light emitting device 101 includes a growth substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second cladding layer ( 121, and a second conductive semiconductor layer 123.

The growth substrate 111 may use a translucent, insulating or conductive substrate, and for example, at least one of sapphire (Al 2 O 3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3, and LiGaO 3. It is available. A plurality of protrusions 112 may be formed on an upper surface of the growth substrate 111, and the plurality of protrusions 112 may be formed through etching of the growth substrate 111, or may include light such as a separate roughness. It may be formed into an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The growth substrate 111 may have a thickness in the range of 30 μm to 150 μm, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma laser deposition (PLD). Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited thereto.

A buffer layer 113 may be formed on the growth substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II to group VI compound semiconductor. The buffer layer 113 includes a semiconductor layer using a group III-V group compound semiconductor, for example, InxAlyGa1-x-yN (0 = x = 1, 0 = y = 1, 0 = x + y = 1). The semiconductor having a compositional formula includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a group III-V group compound semiconductor doped with a first conductive dopant, for example, InxAlyGa1-x-yN (0 = x = 1, 0 = y = 1, 0). = x + y = 1) can be formed of a semiconductor material having a composition formula. When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed in several degrees or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer may be formed of, for example, a semiconductor material having a composition formula of InxAlyGa1-x-yN (0 = x = 1, 0 = y = 1, 0 = x + y = 1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer, for example, a composition formula of InxAlyGa1-x-yN (0 = x = 1, 0 = y = 1, 0 = x + y = 1). It can be formed of a semiconductor material having a. The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

The second clad layer 121 is formed on the active layer 119, and the second clad layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. The compound semiconductor may be formed of, for example, a GaN-based semiconductor. For example, the second clad layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the second cladding layer 121, and the second conductive semiconductor layer 123 includes a dopant of a second conductive type. The second conductive semiconductor layer 123 may be formed of at least one of a group III-V compound semiconductor, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, etc., and may include a single layer or a multilayer. . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, and the first conductive semiconductor layer 117 may be a p-type semiconductor layer. It can be implemented as. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting device 101 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure 150. ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150, and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on an upper surface of the second conductive semiconductor layer 123, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (AZO). zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. Selected, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 101, and the insulating layer may prevent an interlayer short of the light emitting structure 150 and prevent moisture penetration.

The light emitting module or substrate according to the embodiment (s) disclosed above may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and may include a display device, another lighting lamp, a traffic light, a vehicle headlight, an electronic signboard, and the like shown in FIG. 9.

9 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 9, the display device 1000 includes a light guide plate 1041, a light emitting module 300 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 300, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse surface light provided from the light emitting module 300 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 300 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 300 is disposed in the bottom cover 1011, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 300 may include a substrate 200 and a light emitting device package 100 according to the embodiment disclosed above, and the light emitting device package 200 may be arranged on the substrate 200 at predetermined intervals. have.

The substrate 200 may include a board on which a circuit pattern is printed on an insulating layer. For example, a resin-based printed circuit board (PCB), a metal core PCB, and a flexible board may be used. PCB, ceramic PCB, FR-4 substrates.

The substrate 200 is, for example, a metal core PCB, and the metal core PCB further includes a metal layer having better heat dissipation efficiency than other resin-based substrates. For example, the metal core PCB includes a metal layer, an insulating layer on the metal layer, and a laminated structure having a wiring layer on the insulating layer, wherein the metal layer forms a heat conductive metal having a thickness of 0.3 mm or more to increase heat dissipation efficiency. Will let you.

At least one light emitting device package 100 is mounted on the substrate 200, and the light emitting device package 100 includes a first lead part 33 and a second lead part 43 disposed on the second side surface part S2. ) Is solder bonded to the substrate 200.

The plurality of light emitting device packages 100 may be mounted on the substrate 200 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting module 300 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 300, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 300 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 300, but are not limited thereto.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package 11: body
12: support portion 13: reflecting portion
15: cavity 20: heat dissipation frame
30, 40: lead frame 101: light emitting element
200: substrate 300: light emitting module

Claims (11)

A body having a cavity;
A first lead frame and a second lead frame disposed in the cavity of the body;
A heat dissipation frame disposed between the first lead frame and the second lead frame disposed in the cavity;
At least one light emitting device on the first lead frame and the second lead frame;
A first lead portion and a second lead portion disposed on the side portion of the body; And
A first heat dissipation part bent from the heat dissipation frame
Light emitting device package comprising a. The method of claim 1,
The heat dissipation frame further includes an upper surface portion disposed on the bottom surface of the cavity, the light emitting device package having a bent region between the upper surface portion and the first heat dissipation portion. The method of claim 1,
The width of the bent region is smaller than the light emitting device package width of the first heat radiating portion. The method of claim 2,
The first lead frame includes an upper surface portion disposed in the cavity, the first lead portion disposed on the side surface portion,
The second lead frame may include an upper surface portion disposed in the cavity and the second lead portion disposed on the side portion. 5. The method of claim 4,
The first lead frame further includes a second heat dissipation portion bent from the upper surface portion between the first lead portion and the first heat dissipation portion,
The second lead frame further includes a third heat dissipation portion bent from the upper surface portion between the second lead portion and the first heat dissipation portion. The method of claim 5,
The heat dissipation frame is a light emitting device package is connected to the light emitting device via a wire. The method of claim 5,
The heat dissipation frame is a light emitting device package having an uneven portion on the side of the upper surface. The method of claim 5,
At least one hole is formed in the bent region of the heat dissipation frame, the bent region between the upper surface portion of the first and second lead frame and the second and third heat dissipation portion. 9. The method of claim 8,
The hole is a light emitting device package including any one of a circle, an ellipse, a polygon. 5. The method of claim 4,
The heat dissipation frame is a light emitting device package is a non-polar terminal. An illumination system comprising the light emitting device package of any one of claims 1 to 10.

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