KR101896690B1 - Light emitting device and light emitting device package - Google Patents

Abstract

A light emitting device according to an embodiment includes: a first conductive semiconductor layer; A second conductive semiconductor layer under the first conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A phosphor layer on the light emitting structure; And a light-transmissive sidewall disposed on a first one of the sides of the phosphor layer around the upper surface of the light-emitting structure, wherein the phosphor layer has a second side of the side surface opposite the first side opened from the light-transmissive sidewall .

Description

[0001] LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE [0002]

Embodiments relate to a light emitting device and a light emitting device package.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

In recent years, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

Embodiments provide a light emitting device in which light-transmissive sidewalls are in contact with either side of a phosphor layer disposed on a light emitting structure, and a light emitting device package having the same.

Embodiments provide a light emitting device and a light emitting device package in which a guide wall is disposed in contact with two adjacent side surfaces of a phosphor layer disposed on a light emitting structure.

Embodiments provide a light emitting device and a light emitting device package in which at least two side faces of a phosphor layer disposed on a light emitting structure are opened and a light transmitting side wall is disposed on at least one side.

A light emitting device according to an embodiment includes: a first conductive semiconductor layer; A second conductive semiconductor layer under the first conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A phosphor layer on the light emitting structure; And a light-transmissive sidewall disposed on a first one of the sides of the phosphor layer around the upper surface of the light-emitting structure, wherein the phosphor layer has a second side of the side surface opposite the first side opened from the light-transmissive sidewall .

In the embodiment, the light emitting device package includes the above light emitting element; A body having a cavity; A plurality of lead electrodes disposed in the cavity and connected to the light emitting devices; And a molding member in the cavity.

The embodiment can improve the light amount of the light emitting element.

The embodiment can improve the manufacturing process of the phosphor layer by disposing the light-transmissive sidewalls for guiding the phosphor layers.

Embodiments can minimize the area of the light-transmitting sidewall.

Embodiments can improve the reliability of the light emitting device and the light emitting device package having the same.

1 is a side sectional view of a light emitting device according to a first embodiment.
2 (A) to 2 (D) are views showing another example of the plane of the light emitting device of FIG.
3 to 11 are views showing a manufacturing process of the light emitting device of FIG.
12 is a side sectional view showing a light emitting device according to the second embodiment.
13 is a side sectional view showing a light emitting device according to the third embodiment.
14 is a plan view showing a light emitting device according to a fourth embodiment.
15 is a plan view showing a light emitting device according to the fifth embodiment.
16 is a side sectional view showing a light emitting device package having the light emitting element of FIG.
17 is a perspective view showing a display device having the light emitting device package of Fig.
18 is a cross-sectional side view showing another example of the display device having the light emitting device package of Fig.
19 is a view showing a lighting device having the light emitting device package of Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a cross-sectional view of a light emitting device according to a first embodiment.

1, the light emitting device 100 includes a light emitting structure 120, a first electrode 122, a phosphor layer 183, a light-transmitting sidewall 181, a current blocking layer 161, a plurality of conductive layers 163, And a conductive support member 173. The second electrode layer 170 has a first electrode layer 170 and a second electrode layer 170,

A phosphor layer 183 may be disposed on the light emitting structure 120. The phosphor layer 183 may include phosphors in the light transmitting resin layer. The light-transmitting resin layer may include a light-transmitting material such as a silicon-based or epoxy-based material, and the phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the incident light to emit light of a different wavelength.

The phosphor layer 183 may have a thickness of 1 to 100,000 mu m, and as another example, the phosphor layer 183 may have a thickness of 10 mu m to 40 mu m. The thickness of the phosphor layer 183 may be the length of the growth direction of the light emitting structure 120. Further, the phosphor layer 183 may be formed to have a uniform thickness, and the phosphor layer 183 having such a uniform thickness may be formed by, for example, a confinitive coating method.

A protective layer made of a translucent resin may be further formed on the side surfaces of the phosphor layer 183 and the light emitting structure 120. However, the present invention is not limited thereto.

Transparent sidewalls 181 are disposed on two adjacent side surfaces or on either side of the phosphor layer 183. The light-transmissive sidewall 181 is disposed on the upper surface of the light-emitting structure 120 and is in contact with one side or adjacent two sides of the phosphor layer 183.

The light-transmissive sidewall 181 may be formed of an insulating material or a conductive material. The light-transmissive sidewall 181 may be formed of a light transmitting material such as silicon or epoxy, or may include a light transmitting film such as a PI (polyimide) film or a resin film (PE, PP, PET). The light-transmissive sidewall 181 is made of SiO ₂ , Al ₂ O ₃ And the like.

The refractive index of the phosphor layer 183 and the transmissive sidewall 181 may be higher or lower than that of the transmissive sidewall 181. The refractive index of the phosphor layer 183 may be higher or lower than that of the transmissive sidewall 181. Alternatively, the phosphor layer 183 and the transmissive sidewall 181 may be formed of the same material having the same refractive index. Accordingly, the phosphor layer 183 and the transmissive sidewall 181 may be made of the same resin material. The adhesive force between them can be improved. Thus, the phosphor layer 183 can be effectively supported and protected.

A diffusion agent such as TIO ₂ or SiO ₂ may be added to the light-transmissive sidewall 181, but the present invention is not limited thereto. As another example, the transmissive sidewall 181 may be embodied as a reflective sidewall including at least 30% of a metal oxide having a high refractive index to improve reflectance of incident light.

The transparent side wall 181 is in contact with the adjacent second side surface S2 and the third side surface S3 of the side surface S1-S4 of the phosphor layer 183 as shown in FIG. 2 (A) The first and fourth side surfaces S1 and S4 corresponding to the second and third side surfaces S2 and S3 of the first side surface 183 are opened from the transparent side wall 181. [

The light-transmissive sidewall 181 contacts the first side surface S1 and the third side surface S3 of the side surfaces S1-S4 of the phosphor layer 183 as shown in FIG. 2 (B) The second and fourth side surfaces S2 and S4 corresponding to the first and third side surfaces S1 and S3 of the first and second side surfaces 183 and 183 are opened from the transparent side wall 181. [

The light transmitting side wall 181 is in contact with the adjacent first side surface S1 and the fourth side surface S4 of the side surface S1-S4 of the phosphor layer 183 as shown in FIG. 2C, The second and third side surfaces S2 and S3 corresponding to the first and fourth side surfaces S1 and S4 of the first side surface 183 are opened from the transparent side wall 181. [

The transparent side wall 181 is in contact with the adjacent fourth side surface S4 and the second side surface S2 of the side surface S1-S4 of the phosphor layer 183 as shown in FIG. 2 (D) The first and third side surfaces S1 and S3 corresponding to the fourth and second side surfaces S4 and S2 of the first side surface 183 are opened from the light transmissive side wall 181. [

The light-transmissive sidewall 181 shown in Figs. 2A to 2D functions as a sidewall in contact with two adjacent side surfaces of the phosphor layer 183, and the other two sides of the phosphor layer 183 function as the light- The side wall 181 is not formed and is opened.

The thickness of the light-transmissive sidewall 181 and the thickness of the phosphor layer 183 may be the same or different. For example, the thickness of the light-transmissive sidewall 181 may be greater than the thickness of the phosphor layer 183, so that light can be effectively extracted through the outer surface of the light-transmissive sidewall 181. Here, the thickness of the light-transmissive sidewall 181 may be the growth direction of the light-emitting structure 120.

The thickness of the phosphor layer 183 may be thicker or thinner than the thickness of the first electrode 122, but is not limited thereto.

The area of the phosphor layer 183 can be increased because the light-transmissive sidewall 181 does not cover the entire front surface of the phosphor layer 183 as shown in Figs. 2A to 2D. At least two sides of the phosphor layer 183 may be disposed on the same plane as the side surfaces of the light emitting structure 120, for example, the side surfaces of the first conductive type semiconductor layer 121. Further, the length of one side of the phosphor layer 183 may be shorter than the length T1 of one side of each chip or the length of the light-transmitting sidewall 181 corresponding thereto, but the present invention is not limited thereto. The length T1 may be a length of one side of the first conductivity type semiconductor layer 121. [

The light emitting structure 120 includes a plurality of compound semiconductor layers and includes a first conductive semiconductor layer 121, an active layer 123, a second conductive clad layer 125, and a second conductive semiconductor layer 127).

The first conductive semiconductor layer 121 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and may include a first conductivity type dopant. The first conductive semiconductor layer 121 may be formed of any one of compound semiconductors such as Group III-V compound semiconductor doped with the first conductive dopant such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN have. The first conductivity type semiconductor layer 121 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + May be formed of a material. When the first conductivity type semiconductor layer 121 is an n-type semiconductor layer, the first conductivity type dopant includes n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 121 may be formed as a single layer or a multi-layer structure, and the multi-layered semiconductor layers may have the same dopant concentration or different dopant concentrations.

The first conductive semiconductor layer 121 may have a superlattice structure in which first and second layers are alternately arranged. The thickness of the first layer or the second layer may be greater than a number A .

The upper surface of the first conductive semiconductor layer 121 may have a flat or non-planar structure. A first electrode 122 is formed on a first region of the first conductivity type semiconductor layer 121 and the first electrode 122 is electrically connected to the first conductivity type semiconductor layer 121, have. The first electrode 122 may have a circular or polygonal shape as viewed from above, and may include an electrode pattern in the form of an arm connected to the pad and the pad. A light-transmitting electrode layer may be further disposed between the first electrode 122 and the first conductive semiconductor layer 121, but the present invention is not limited thereto.

A first conductive clad layer (not shown) may be formed between the first conductive semiconductor layer 121 and the active layer 123. The first conductive clad layer may be formed of a GaN-based semiconductor, and the bandgap of the first conductive clad layer may be greater than a band gap of the barrier layer of the active layer 123. The first conductive type cladding layer serves to constrain the carrier. The first conductive cladding layer may be doped with an n-type or p-type dopant.

An active layer 123 is formed under the first conductive semiconductor layer 121. The active layer 123 may be formed of at least one of a single well structure, a multi-well structure, a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. The active layer 123 is formed by alternately arranging well layers / barrier layers, and the period of the well layer / barrier layer may be, for example, a period of a period of the stacking of InGaN / GaN, GaN / AlGaN, InGaN / InGaN, InGaN / InAlGaN, Structure may be formed in 2 to 30 cycles. The active layer 123 can selectively emit light within a wavelength range of the ultraviolet band in the visible light band and generate at least one peak wavelength.

A second conductive clad layer 125 is disposed under the active layer 123 and the second conductive clad layer 125 is formed of a material having a higher band gap than the band gap of the barrier layer of the active layer 123 For example, a GaN-based semiconductor layer. The second conductive clad layer 125 may function as an electron barrier layer between the active layer 123 and the second conductive semiconductor layer 127, but the present invention is not limited thereto. The second conductive clad layer 125 may be doped with an n-type or p-type dopant.

The second conductive semiconductor layer 127 may be formed under the second conductive clad layer 125 and the second conductive semiconductor layer 127 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped. The second conductive semiconductor layer 127 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. When the second conductive semiconductor layer 127 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

For example, the second conductive semiconductor layers 125 and 127 may be formed of an n-type semiconductor layer, the first conductive semiconductor layer 121 may be formed of p Type semiconductor layer. Also, a third semiconductor layer of the first conductivity type, for example, an n-type semiconductor layer having a polarity opposite to the second conductivity type may be further formed under the second conductive semiconductor layer 127. The light emitting device 100 may include the first conductive semiconductor layer 121, the active layer 123, the second conductive clad layer 125, and the second conductive semiconductor layer 127 as the light emitting structure 120 And the light emitting structure 120 may have any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the np and pn junctions, an active layer is disposed between two layers, and an npn junction or a pnp junction includes at least one active layer between three layers. Further, another semiconductor layer may be further added to at least one of the n-layer and the p-layer of each of the junction structures, and the present invention is not limited thereto.

A second electrode layer 170 is disposed on the second conductive semiconductor layer 127 and a current blocking layer 161 is disposed between the second conductive semiconductor layer 127 and the second electrode layer 170. The second electrode layer 170 includes an ohmic contact layer 163, a reflective layer 165, and a bonding layer 167.

The current blocking layer 161 may be formed of an insulating material or a conductive material having a higher resistance than the ohmic contact layer 163. The current blocking layer 161 may be formed of an insulating material or a material having a lower electrical conductivity than the second conductive semiconductor layer 125. The current blocking layer 161 is, for _{example, SiO 2, SiO x, SiO} x N y, Si 3 N 4, Al 2 O 3, TiO 2 , Or may be formed of a metal or an alloy.

At least one of the current blocking layers 161 may be disposed to correspond to a vertical direction of the first electrode 122 and may be physically contacted with a lower surface of the second conductive semiconductor layer 127 .

The ohmic contact layer 163 is physically contacted with the second conductive semiconductor layer 127. The ohmic contact layer 163 may be formed of a material capable of improving ohmic characteristics with the semiconductor. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide A low conductive material or an ohmic contact material such as AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx or NiO or Ni or Ag metal may be used.

A reflective layer 165 is formed under the ohmic contact layer 163 and the reflective layer 165 may be formed of a metal having a reflectivity of 70% or more. And at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. have. The reflective layer 165 may be in contact with the second conductive semiconductor layer 127 under the ohmic contact with the metal or with a low conductive material such as ITO. In this case, the ohmic contact layer 163 May not be formed. In addition, the reflective layer 165 may be formed of a plurality of insulating materials having different refractive indices.

A bonding layer 167 is formed below the reflective layer 165 and the bonding layer 167 may be used as a barrier layer or a bonding layer. The material may be Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A conductive support member 173 is formed under the bonding layer 167. The support member 173 may be formed of a metal or a carrier wafer and may be formed of copper, (E.g., Si, Ge, GaAs, ZnO, SiC, etc.), such as a carrier wafer (e.g., Ni-nickel, molybdenum (Mo), and copper-tungsten / RTI > material. As another example, the conductive supporting member 173 may be embodied as a conductive sheet.

The embodiment can provide a vertical light emitting device having a first electrode 122 disposed on the light emitting structure 120 and a conductive support member 173 disposed thereunder.

3 to 11 are views showing a manufacturing process of the light emitting device of FIG.

Referring to FIG. 3, a compound semiconductor layer is grown on the substrate 111. The substrate 111 may be a growth substrate, and the growth substrate may be a light-transmissive, insulative, or conductive substrate. For example, the substrate 111 may be a sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ , and LiGaO ₃ may be used. The growth equipment of the compound semiconductor layer may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD), a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, and the like, and the present invention is not limited thereto.

A plurality of protrusions may be formed on the upper surface of the substrate 111. The plurality of protrusions may be formed through etching of the substrate 111 or may be formed with a light extracting structure such as a separate roughness. The protrusions may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 111 may be in the range of 30 탆 to 150 탆, but is not limited thereto.

A buffer layer 113 may be formed on the substrate 111 and the buffer layer 113 may be formed of at least one layer using a Group 2 or Group 6 compound semiconductor. The buffer layer 113 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, + y? 1), and includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer 113 may be formed in a superlattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to mitigate the difference in lattice constant between the substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the substrate 111 and the nitride semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in a range of 30 to 500 nm, but is not limited thereto. On the buffer layer 113, a nitride-based undoped semiconductor layer or a low-conductivity semiconductor layer may be formed, but the present invention is not limited thereto.

The first conductive semiconductor layer 121 may be formed on the buffer layer 113 or the substrate 111. The first conductive semiconductor layer 121 is formed of a Group III-V compound semiconductor doped with a first conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0 1, 0? X + y? 1). When the first conductivity type semiconductor layer 121 is an N-type semiconductor layer, the first conductivity type dopant is an N-type dopant including Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 121 may include a first conductive clad layer and the first conductive clad layer may be a semiconductor layer adjacent to the active layer 123 and may be formed of a GaN based semiconductor , And the band gap can be formed to be equal to or larger than the band gap of the barrier layer of the active layer 123. The first conductive type cladding layer serves to constrain the carrier.

The active layer 123 is formed on the first conductive semiconductor layer 121. The active layer 123 may be formed of at least one of a single quantum well, a multiple quantum well (MQW), a quantum wire, and a quantum dot structure. The active layer 123 is formed by alternately arranging well layers / barrier layers, and the period of the well layer / barrier layer may be, for example, in the order of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN, or InAlGaN / InAlGaN Structure may be formed in 2 to 30 cycles. The thickness of the well layer is about 2 to 5 nm, and the thickness of the barrier layer is about 5 to 10 nm.

The second conductivity type cladding layer 125 may be formed on the active layer 123 and the second conductivity type cladding layer 125 may be a nitride semiconductor layer doped with a second conductivity type dopant, And may be formed of a material having a band gap higher than the band gap, but is not limited thereto.

The second conductive semiconductor layer 127 is formed on the second conductive clad layer 125 and the second conductive semiconductor layer 127 includes a dopant of the second conductive type. The second conductive semiconductor layer 127 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. When the second conductive semiconductor layer 127 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

For example, the second conductive semiconductor layers 125 and 127 may be an N-type semiconductor layer, the first conductive semiconductor layer 121 may be a P-type semiconductor layer, Semiconductor layer. Also, an N-type semiconductor layer may be formed on the second conductive semiconductor layers 125 and 127 as a first conductive type semiconductor layer having a polarity opposite to that of the second conductive type. The light emitting structure 120 may be implemented by any one of an NP junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure.

Referring to FIG. 4, a current blocking layer 161 is formed in a boundary region of a unit chip length T1. The current blocking layer 161 is protected by a mask layer against a protection region, Or a printing method, but the present invention is not limited thereto.

The current blocking layer 161 may be formed of a dielectric layer, a conductive layer, a metal layer for Schottky contact, a pair of dielectric layers having different refractive indexes, or a pair of metal layers and dielectric layers.

The current blocking layer 161 may be formed of a material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO). The metal layer may include at least one of Ag, Ni, Pd, and Pt. The dielectric layer is SiO _2, TiO ₂ and Al ₂ O ₃ Or the like.

The area of the current blocking layer 161 is formed in a region corresponding to the electrode position in FIG. 1. For example, the number and pattern of the current blocking layers 161 correspond to the number and pattern of the electrodes.

Referring to FIGS. 5 and 6, a second electrode layer 170 is formed on the upper surface of the light emitting structure 135. The second electrode layer 170 may be formed by a sputtering method, a deposition method, or a plating method, and the bottom surface of the second electrode layer 170 is in ohmic contact with the upper surface of the second conductive semiconductor layer 130.

The second electrode layer 170 includes an ohmic contact layer 163, a reflective layer 165, and a bonding layer 167.

The ohmic contact layer 163 is physically contacted with the second conductive semiconductor layer 127. The ohmic contact layer 163 may be formed of a material capable of improving ohmic characteristics with the semiconductor. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide A low conductive material or an ohmic contact material such as AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx or NiO or Ni or Ag metal may be used.

A reflective layer 165 is formed on the ohmic contact layer 163 and the reflective layer 165 may be formed of a metal having a reflectance of 70% or more. And at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. have. The reflective layer 165 may be in contact with the second conductive semiconductor layer 127 and may be in ohmic contact with the metal. In addition, the reflective layer 165 may be formed of a plurality of insulating materials having different refractive indices.

A bonding layer 167 is formed on the reflective layer 165 and the bonding layer 167 may be used as a barrier metal or a bonding metal. Examples of the material include Ti, Au, Sn, Ni, Cr, Ga , In, Bi, Cu, Ag, and Ta and an optional alloy.

Referring to FIG. 6, a conductive support member 173 may be formed on the bonding layer 167 by a plating method, a deposition method, or a sputtering method. The support member 173 may be formed of a metal or a carrier wafer. Examples of the support member 173 include copper-copper, gold-gold, nickel-nickel, molybdenum, copper- W, or may be formed of a conductive material such as a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the conductive supporting member 173 may be embodied as a conductive sheet.

6 and 7, the conductive support member 173 is positioned on the base and the substrate 111 is positioned on the uppermost side. Then, the substrate 111 disposed on the light emitting structure 120 is removed.

The removal method of the substrate 111 can be removed by a laser lift off (LLO) process. The laser lift-off method is a method of irradiating the substrate 111 with a laser having a wavelength in a predetermined region to separate the substrate 111. If there is another semiconductor layer (for example, a buffer layer) or an air gap between the substrate 111 and the first conductivity type semiconductor layer 121, the substrate may be separated using a wet etching solution. The method of removal is not limited. The buffer layer 113 may be chemically removed or partially removed.

Referring to FIG. 8, a light-transmissive sidewall 181 is formed on the light-emitting structure 120. The light-transmissive sidewall 181 is formed around the area of a plurality of chip units, and the forming method thereof can be arranged by a printing method, a dispensing method, or photolithography.

The light-transmissive sidewall 181 may be made of a resin material such as a translucent material such as silicon or epoxy, or a material such as SiO ₂ , Al ₂ O ₃ Or a resin-based light-transmitting film.

An inner region of the light-transmissive sidewall 181 is an open region, and an upper surface of the light-emitting structure 120 is exposed. The phosphor layer 183 is formed in the open region. The phosphor layer 183 may be formed by a printing method or a dispensing method. In the phosphor layer 183, a phosphor is added in the light-transmitting resin layer. The light-transmitting resin layer may include a light-transmitting material such as a silicon-based or epoxy-based material, and the phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the incident light to emit light of a different wavelength. The phosphor layer 183 may have a thickness of 1 to 100,000 mu m, and the phosphor layer 183 may have a thickness of 1 to 10,000 mu m. The thickness of the phosphor layer 183 may be the length of the growth direction of the light emitting structure 120. Here, a first electrode hole 122A may be formed in each chip unit, and the first electrode hole 122A may be formed before or after the formation of the phosphor layer.

As shown in Fig. 9, a transparent side wall 181 is arranged around a plurality of chip areas A1, for example, four chip areas A1. A phosphor layer 183 is disposed in the transmissive sidewall 181 and a first electrode hole 122A is formed in the phosphor layer 183. At least one of the first electrode holes 122A may be disposed in the area A1 divided by the boundary lines L1 and L2 of the length T1 of each chip unit.

When dividing a plurality of chip areas A1 as shown in FIG. 9, the chips may be divided into four individual chip areas A1 as shown in FIGS. 2A to 2D.

Alternatively, as shown in Fig. 10, the light-transmitting sidewall 181 is disposed around four or more chip areas A1, for example, eight chip areas, and the phosphor layer 183 is disposed in the light-transmissive sidewall 181. [ When dividing by the boundary lines L1 and L2 of individual chip units, it can be divided into eight individual chip regions A1 as shown in Fig. Here, the light-transmitting sidewalls 181 may be disposed on one side of the phosphor layer 183 and the other chips may be disposed on the two sides of the phosphor layer 183 on some chips. Or the phosphor layer 183 may have three open sides or two opened sides.

1 and 8, a first electrode 122 is formed in the first electrode hole 122A on the first conductive semiconductor layer 110, and the first electrode 122 is formed in a deposition method , A sputtering method, or a plating method, but the present invention is not limited thereto. The number of the first electrodes 122A may be one or more. 1, and can be manufactured as shown in FIG. 1 by separating the individual chip units based on the boundary region of the unit chip length T1. At this time, the chip-based separation method can selectively use a cutting process, a laser or a braking process.

12 is a side sectional view showing a light emitting device according to the second embodiment. In describing the second embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

12, the light emitting device includes a light extracting structure 121A such as a roughness on the upper surface of the light emitting structure 120. Referring to FIG. The light extracting structure 121A may be formed on the upper surface of the first conductivity type semiconductor layer 121 by a concavo-convex pattern or a plurality of protrusions, It can be formed by etching.

13 is a side sectional view showing a light emitting device according to the third embodiment. In the description of the third embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 13, the light emitting device includes a first phosphor layer 184 on the light emitting structure 120 and a second phosphor layer 185 on the first phosphor layer 184.

The first phosphor layer 184 and the second phosphor layer 185 may include phosphors having different peak wavelengths. For example, the first phosphor layer 184 may have a peak wavelength lower than the peak wavelength of 470 nm Or the second phosphor layer 185 can emit a peak wavelength higher than the peak wavelength of 460 nm.

The first phosphor layer 184 may include a blue phosphor or the second phosphor layer 185 may include at least one of red, yellow, and green phosphors.

The first and second phosphor layers 184 and 185 may include a translucent material such as a silicon-based or epoxy-based translucent resin layer, and the phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, .

The first phosphor layer 184 and the second phosphor layer 185 may have the same thickness or different thicknesses, and the thickness of each of the layers 184 and 185 may be 1 to 100,000 m.

The light-transmissive sidewall 181 may be formed on one side or two sides of the side surfaces of the first and second phosphor layers 184 and 185. The thickness of the light-transmissive sidewall 181 may be equal to or different from the thickness of the first and second phosphor layers 184 and 185, but is not limited thereto.

14 is a plan view showing a light emitting device according to a fourth embodiment. In describing the fourth embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

14, the light-transmissive sidewall 181 covers the entirety of the second side surface S2 and the third side surface S3 of the phosphor layer 183. The light-transmissive sidewall 181 includes a first protrusion 11 and a second protrusion 12. The first protrusion 11 extends from a third side S3 of the phosphor layer 183 to a first side S1 and partially covers the first side S1 of the phosphor layer 183 and the second protrusion 12 covers the second side S2 of the phosphor layer 183, And partly protrudes in the direction of the side surface S4 to cover a part of the fourth side surface S1 of the phosphor layer 183.

The light-transmissive sidewall 181 having the first and second protrusions 11 and 12 covers the entire two sides of the phosphor layer 183 and can cover a part of the other two sides. Such a light-transmissive sidewall 181 can be formed by protruding the protrusion in the direction of the chip boundary L1 or L2, which is the center of each side, in the structure as shown in Fig. 9 or Fig.

15 is a plan view showing a light emitting device according to the fifth embodiment. In the description of the fifth embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

15, the inner surface of the light-transmissive side wall 181 is in contact with the side surface of the phosphor layer 183. A plurality of grooves 13 may be formed in the inner side surface of the transmissive sidewall 181 to increase the area of adhesion of the plurality of grooves 13 to the phosphor layer 183. The shape of the groove 13 may be a concave shape such as a polygonal shape or a hemispherical shape, but is not limited thereto.

16 is a view illustrating a light emitting device package according to an embodiment.

16, the light emitting device package 200 includes a body 210, a first lead electrode 211 and a second lead electrode 212 provided on the body 210, A light emitting element 100 electrically connected to the first lead electrode 211 and the second lead electrode 212 and a molding member 220 surrounding the light emitting element 101 on the body 210, .

The body 210 may be formed of a silicon material, a synthetic resin material, or a metal material. The body 210 includes a reflective portion 215 having a cavity and an inclined surface around the body.

The first lead electrode 211 and the second lead electrode 212 are electrically separated from each other and may be formed to penetrate the inside of the body 210. That is, some of the first lead electrode 211 and the second lead electrode 212 may be disposed inside the cavity, and other portions may be disposed outside the body 210.

The first lead electrode 211 and the second lead electrode 212 may supply power to the light emitting device 100 and increase light efficiency by reflecting light generated from the light emitting device 100, And may also function to discharge the heat generated in the light emitting device 100 to the outside.

The light emitting device 100 may be mounted on the body 210 or on the first lead electrode 211 and / or the second lead electrode 212.

The wire 216 may electrically connect the light emitting device 100 and the second lead electrode 212, but is not limited thereto.

The molding member 220 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 220 includes a phosphor, and the wavelength of the light emitted from the light emitting device 100 may be changed by the phosphor. In the embodiment, the phosphor may not be added to the molding member 220, and the target light may be realized by a plurality of phosphor layers formed on the surface of the light emitting device.

The light emitting device or the light emitting device package according to the embodiment can be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arrayed. The light unit includes the display device shown in Figs. 17 and 18 and the lighting device shown in Fig. 19, and includes a lighting lamp, a traffic light, And the like.

17 is an exploded perspective view of the display device according to the embodiment.

17, the display apparatus 1000 includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, and a bottom cover 1011 for storing the light guide plate 1041, the light emitting module 1031 and the reflecting member 1022 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light emitting module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately to serve as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 200 according to the embodiment described above. The light emitting device package 200 may be arrayed on the substrate 1033 at a predetermined interval have. The substrate may be, but is not limited to, a printed circuit board. The substrate 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device package 200 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Accordingly, heat generated in the light emitting device package 200 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 200 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 200 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 200 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

18 is a view illustrating a display device having a light emitting device package according to an embodiment.

18, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device package 200 is arrayed, an optical member 1154, and a display panel 1155 .

The substrate 1120 and the light emitting device package 200 may be defined as a light emitting module 1160. The bottom cover 1152, the at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit 1150.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1160 and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1160.

19 is a perspective view of a lighting apparatus according to an embodiment.

19, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 200 mounted on the substrate 1532. A plurality of the light emitting device packages 200 may be arrayed in a matrix or at a predetermined interval.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, the substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrate, and the like.

In addition, the substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer such as a white color, a silver color, or the like whose surface is efficiently reflected by light.

At least one light emitting device package 200 may be mounted on the substrate 1532. Each of the light emitting device packages 200 may include at least one LED (Light Emitting Diode) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue or white, or a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain colors and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device 120: light emitting structure
121: first conductivity type semiconductor layer 122: first electrode
123: active layer 125: second conductivity type cladding layer
127: second conductivity type semiconductor layer 161: current blocking layer
163: ohmic contact layer 165: reflective layer
167: bonding layer 170: second electrode layer
173: Conductive support member 181:
183: phosphor layer

Claims (17)

Conductive support members;
A current blocking layer on said conductive support member;
A second conductive semiconductor layer on the current blocking layer; A first conductive semiconductor layer on the second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
An electrode on the light emitting structure;
A phosphor layer on the light emitting structure; And
And a light-transmissive sidewall disposed on a first one of the side surfaces of the phosphor layer around an upper surface of the light-emitting structure,
Wherein the phosphor layer has a second side opposite to the first side of the side surfaces opened from the light-transmissive side wall,
The current blocking layer is in contact with the lower surface of the second conductive type semiconductor layer
Wherein the electrode is disposed in an electrode hole formed in the phosphor layer,
A side surface of the electrode is surrounded by the phosphor layer,
Wherein the current blocking layer corresponds vertically to a region of the electrode,
And the height of the electrode is lower than the height of the phosphor layer. 3. The phosphor according to claim 1, wherein the light-transmissive sidewall is further disposed on a third side surface of the side surface of the phosphor layer adjacent to the first side surface,
And the fourth side surface of the phosphor layer corresponding to the third side surface is opened from the light-transmissive sidewall. The light emitting device according to claim 2, wherein the light-transmitting sidewall further extends to at least a part of the second side and the fourth side of the phosphor layer. The method according to claim 1,
Wherein the phosphor layer includes a first phosphor layer and a second phosphor layer that emit light having different peak wavelengths. The method according to claim 1,
Wherein the light-transmissive sidewall includes at least one groove on an inner side in contact with the phosphor layer. 5. The method of claim 4,
The first phosphor layer is disposed on the light emitting structure,
The second phosphor layer is disposed on the first phosphor layer,
Wherein the height of the first phosphor layer is lower than the height of the electrode.
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