KR20090008338A - 규소 함유 조성물을 가진 발광 소자의 제조 방법 - Google Patents
규소 함유 조성물을 가진 발광 소자의 제조 방법 Download PDFInfo
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- KR20090008338A KR20090008338A KR1020087027840A KR20087027840A KR20090008338A KR 20090008338 A KR20090008338 A KR 20090008338A KR 1020087027840 A KR1020087027840 A KR 1020087027840A KR 20087027840 A KR20087027840 A KR 20087027840A KR 20090008338 A KR20090008338 A KR 20090008338A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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Abstract
Description
Claims (31)
- 발광 다이오드를 제공하는 단계;광학 요소를 제공하는 단계;규소 결합된 수소와 지방족 불포화체를 포함하는 규소 함유 수지 및 금속 함유 촉매를 포함하는 광중합성 조성물로 광학 요소를 발광 다이오드에 부착하는 단계; 및700 ㎚ 이하의 파장을 갖는 화학 방사선을 인가하여 규소 함유 수지 내의 하이드로실릴화를 개시하는 단계를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 규소 결합된 수소와 지방족 불포화체는 동일한 분자 내에 존재하는 발광 소자의 제조 방법.
- 제1항에 있어서, 규소 결합된 수소와 지방족 불포화체는 상이한 분자 내에 존재하는 발광 소자의 제조 방법.
- 제1항에 있어서, 화학 방사선을 인가하는 단계는 120℃ 이하의 온도에서 화학 방사선을 인가하는 단계를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 금속 함유 촉매는 백금을 포함하는 발광 소자의 제조 방법.
- 제5항에 있어서, 금속 함유 촉매는 Pt(II) β-다이케토네이트 착물, (η5-사이클로펜타다이엔일)트라이(σ-지방족)백금 착물 및 C7-20-방향족 치환 (η5-사이클로펜타다이엔일)트라이(σ-지방족)백금 착물로 이루어진 군으로부터 선택되는 발광 소자의 제조 방법.
- 제3항에 있어서, 광중합성 물질은 하기 화학식의 단위를 포함하는 유기실록산을 포함하는 발광 소자의 제조 방법.R1 aR2 bSiO(4-a-b)/2(여기서,R1은 지방족 불포화체가 없고 탄소 원자수가 1 내지 18인 1가의 직쇄, 분지형 또는 사이클릭의 비치환 또는 치환 탄화수소 기이며;R2는 지방족 불포화체를 갖고 탄소 원자수가 2 내지 10인 1가 탄화수소 기이고;a는 0, 1, 2, 또는 3이며;b는 0, 1, 2, 또는 3이고;합 a+b는 0, 1, 2, 또는 3이되;단, R2가 분자 당 평균 1개 이상 존재함.)
- 제3항에 있어서, 광중합성 물질은 하기 화학식의 단위를 포함하는 유기실록산을 포함하는 발광 소자의 제조 방법.R1 aHcSiO(4-a-c)/2(여기서,R1은 지방족 불포화체가 없고 탄소 원자수가 1 내지 18인 1가의 직쇄, 분지형 또는 사이클릭의 비치환 또는 치환 탄화수소 기이며;a는 0, 1, 2, 또는 3이고;c는 0, 1, 또는 2이며;합 a+c는 0, 1, 2, 또는 3이되;단, 규소 결합된 수소가 분자 당 평균 1개 이상 존재함.)
- 제1항에 있어서, 규소 결합된 수소와 지방족 불포화체는 1.0 내지 3.0의 몰비로 존재하는 발광 소자의 제조 방법.
- 제1항에 있어서, 화학 방사선을 인가하는 단계는 광학 요소를 발광 다이오드 에 부착하기 전에 수행되는 발광 소자의 제조 방법.
- 제10항에 있어서, 지방족 불포화체의 5 몰% 이상이 하이드로실릴화 반응에서 소모되는 발광 소자의 제조 방법.
- 제10항에 있어서, 지방족 불포화체의 60 몰% 이상이 하이드로실릴화 반응에서 소모되는 발광 소자의 제조 방법.
- 제1항에 있어서, 화학 방사선을 인가하는 단계는 광학 요소를 부착한 후에 수행되는 발광 소자의 제조 방법.
- 제13항에 있어서, 지방족 불포화체의 5 몰% 이상이 하이드로실릴화 반응에서 소모되는 발광 소자의 제조 방법.
- 제13항에 있어서, 지방족 불포화체의 60 몰% 이상이 하이드로실릴화 반응에서 소모되는 발광 소자의 제조 방법.
- 제1항에 있어서, 화학 방사선을 인가하는 단계는 광학 요소를 부착하기 전과 부착한 후 모두에서 수행되는 발광 소자의 제조 방법.
- 제1항에 있어서, 120℃ 이하의 온도에서 가열하는 단계를 추가로 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소는 중합체, 유리, 세라믹, 또는 그 조합을 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소는 렌즈를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소는 광학 필름을 포함하는 발광 소자의 제조 방법.
- 제20항에 있어서, 광학 필름은 반사 편광 필름, 흡수 편광 필름, 역반사 필름(retro-reflective), 도광체, 확산 필름, 휘도 향상 필름, 눈부심 방지 필름(glare control film), 보호 필름, 프라이버시 필름(privacy film), 또는 그 조합을 포함하는 발광 소자의 제조 방법.
- 제20항에 있어서, 광학 필름은 단파 통과 반사기(short pass reflector) 또는 장파 통과 반사기(long pass reflector)를 포함하는 발광 소자의 제조 방법.
- 제22항에 있어서, 광학 필름은 형광체-반사기 조립체를 포함하며, 형광체 반사기 조립체는 장파 통과 반사기와 단파 통과 반사기 사이에 배치된 형광체 물질의 층을 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소는 미세구조화된 표면을 갖는 휘도 향상 필름을 포함하며, 미세구조화된 표면은 프리즘 요소의 어레이를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소는 굴절률이 약 1.75 이상이며, 유리, 다이아몬드, 실리콘 카바이드, 사파이어, 지르코니아, 산화아연, 중합체, 또는 그 조합을 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소를 발광 다이오드에 부착하는 단계는 광학 요소와 발광 다이오드를 접촉시키는 단계를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소를 발광 다이오드에 부착하는 단계는 광학 요소를 발광 다이오드의 100 ㎚ 이내에 위치시키는 단계를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 광학 요소를 발광 다이오드에 부착하는 단계는 발광 다이오드를 봉지하는 단계를 포함하는 발광 소자의 제조 방법.
- 제1항에 있어서, 발광 다이오드는 세라믹 또는 중합체 패키지 내에 실장되는 발광 소자의 제조 방법.
- 제1항에 있어서, 발광 다이오드는 회로 기판 또는 플라스틱 전자 기판 상에 실장되는 발광 소자의 제조 방법.
- 제1항의 방법을 사용하여 제조되는 발광 소자.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/383,916 US20070269586A1 (en) | 2006-05-17 | 2006-05-17 | Method of making light emitting device with silicon-containing composition |
US11/383,916 | 2006-05-17 |
Publications (1)
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KR20090008338A true KR20090008338A (ko) | 2009-01-21 |
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KR1020087027840A KR20090008338A (ko) | 2006-05-17 | 2007-04-24 | 규소 함유 조성물을 가진 발광 소자의 제조 방법 |
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US (1) | US20070269586A1 (ko) |
EP (1) | EP2030256A1 (ko) |
JP (1) | JP2009537991A (ko) |
KR (1) | KR20090008338A (ko) |
CN (1) | CN101443926B (ko) |
TW (1) | TW200802991A (ko) |
WO (1) | WO2007136956A1 (ko) |
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KR20140089762A (ko) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
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- 2007-04-24 CN CN2007800177531A patent/CN101443926B/zh not_active Expired - Fee Related
- 2007-04-24 WO PCT/US2007/067266 patent/WO2007136956A1/en active Application Filing
- 2007-04-24 EP EP07761165A patent/EP2030256A1/en not_active Withdrawn
- 2007-05-10 TW TW096116651A patent/TW200802991A/zh unknown
Cited By (2)
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KR101220909B1 (ko) * | 2011-06-01 | 2013-01-11 | 주식회사 아모럭스 | 형광등형 엘이디 조명등 |
KR20140089762A (ko) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
Also Published As
Publication number | Publication date |
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JP2009537991A (ja) | 2009-10-29 |
CN101443926B (zh) | 2012-05-30 |
EP2030256A1 (en) | 2009-03-04 |
US20070269586A1 (en) | 2007-11-22 |
CN101443926A (zh) | 2009-05-27 |
TW200802991A (en) | 2008-01-01 |
WO2007136956A1 (en) | 2007-11-29 |
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