KR20040009818A - A micro chip array including light emitting diode and a module for a full-color display including fluorescent light emitting diode - Google Patents

Abstract

PURPOSE: A micro chip array including an LED and a full color display module including the same are provided to reduce a size, improve the endurance, and enhance the resolution by using the LED. CONSTITUTION: A microchip array including an LED includes a substrate, an electron generation layer(30), a hole generation layer(60), the first pad(82), the second pad(81), the first signal line(170), and the second signal line(120). The substrate includes pixels arrayed in matrix. The electron generation layer(30) including the first doping layer is formed on the pixels. The hole generation layer(60) having the second doping layer is formed on the electron generation layer. The first pad(82) is formed on the electron generation layer. The second pad(81) is formed on the hole generation layer. The first signal line(170) is connected to the electron generation layer through the first pad. The second signal line(120) is connected to the hole generation layer through the second pad.

Description

A microchip array including a light emitting diode and a full color display module including the same {A MICRO CHIP ARRAY INCLUDING LIGHT EMITTING DIODE AND A MODULE FOR A FULL-COLOR DISPLAY INCLUDING FLUORESCENT LIGHT EMITTING DIODE}

The present invention relates to a microchip array including a light emitting diode and a full color display module including the same.

Generally, a light emitting diode is a PN junction diode of a compound semiconductor, and has a function of emitting light when a voltage is applied. That is, a light emitting diode is a semiconductor device that generates a minority carrier (electrons or holes) by applying a voltage to a junction structure of a semiconductor and emits light through a combination thereof.

In the LED lamp using the same, an energy band gap of a semiconductor material and a width of a quantum well structure in the light emitting portion of the LED are used to adjust energy and color of light emitted. In addition, the display device using the light emitting diode lamp manufactures a pixel based on light emitting diode elements having a basic color of red, green, and blue, and implements a desired color by mixing red, green, and blue.

However, the development of semiconductor materials capable of simultaneously implementing green and red colors, including blue, has not been achieved, and display devices using light emitting lamps have been limited to applications in displays of large or outdoor electronic display panels.

An object of the present invention is to provide a microchip array including a light emitting diode and a full color display module including the same.

1 is a cross-sectional view schematically showing the structure of a light emitting diode used in the present invention,

2 is a block diagram showing the structure of a fluorescent light emitting diode lamp including a light emitting diode according to an embodiment of the present invention,

FIG. 3 is a graph for explaining graphically converting light emitted from a light emitting diode into light of a red, green, or blue wavelength band using red, green, and blue phosphors;

4 is an SEM photograph of a red phosphor used in the present invention.

5 and 6 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the red phosphor used in the present invention,

7 is an SEM photograph of the green phosphor used in the present invention.

8 and 9 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the green phosphor used in the present invention,

10 is an SEM photograph of a blue phosphor used in the present invention.

11 and 12 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the blue phosphor used in the present invention,

13 is a block diagram showing a display module using a light emitting diode array according to an embodiment of the present invention,

14 is a layout view illustrating in detail a structure of a pixel in a display device using a light emitting diode according to an exemplary embodiment of the present invention.

FIG. 15 is a cross-sectional view of an element for a display device, taken along a line XV-XV ′ in FIG. 14.

16 is a cross-sectional view illustrating the structure of a unit pixel in a display device element including red, green, and blue phosphors.

In order to solve the technical problem, the present invention arranges light emitting diodes in a matrix form, and each light emitting diode is formed in a range of 50 μm × 50 μm or less to fabricate a microchip array, and a red color is applied to the microchip array. By manufacturing green and blue phosphors, a fluorescent light emitting diode is formed to manufacture a full color display module capable of realizing various colors.

In more detail, the light emitting device according to the present invention includes a light emitting diode that emits purple light and a phosphor that absorbs the violet light emitted from the light emitting diode and converts the light into a light having a predetermined wavelength.

A lid including a first body supporting the light emitting diode and electrically connected to the first pad of the light emitting diode and separated from the first body at a predetermined distance and electrically connected to the second pad of the light emitting diode. The frame may further include a resin molding the light emitting diode and the phosphor.

In this case, the phosphor is preferably a red phosphor, a green phosphor or a blue phosphor, or a phosphor made by mixing at least two of these phosphors, and the red phosphor is K (WO ₄ ) _1.25 : Eu, Sm or Li (WO ₄ ) _1.25 : Eu, Sm series, but green phosphor is (BaSr) ₂ SiO ₄ : Eu series, or blue phosphor is (SrMg) ₅ (PO ₄ ) ₃ Cl: Eu or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu series is preferable.

The light emitting diode may include an active layer including InGaN, and the display device may be configured by fabricating a matrix array on a plurality of pixels using the light emitting device.

In the display device substrate according to the present invention, an electron generation layer doped with impurities of a first conductivity type is formed in an upper pixel of a substrate having pixels of a matrix array, and an electron generation layer is formed on the electron generation layer of each pixel. A hole generating layer doped with an impurity of two conductivity type is formed. First and second pads are respectively formed on the electron generation layer and the hole generation layer, respectively, and a first signal line electrically connected to the electron generation layer of the pixel is formed through the first pad. The second signal line is insulated from and intersects with the first signal line and electrically connected to the hole generating layer of the pixel in common through the second pad.

The electron generating layer or the hole generating layer preferably includes GaN, and the electron generating layer preferably extends in the column direction of the pixel.

A buffer layer including GaN may be formed between the substrate and the electron generating layer, and an active layer including InGaN and an AlGaN containing AlGaN doped with a second conductivity type between the electron generating layer and the hole generating layer. A type clad layer can be formed.

It is preferable that an electrode layer made of a transparent conductive material is formed on the hole generation layer, and the hole generation layers are insulated from the pixels, respectively.

It may further include a red, green or blue phosphor formed in the same or sequentially in the pixel, the red phosphor is K (WO ₄ ) _1.25 : Eu, Sm or Li (WO ₄ ) _1.25 : Eu, Sm Or the green phosphor consists of (BaSr) ₂ SiO ₄ : Eu series, or the blue phosphor consists of (SrMg) ₅ (PO ₄ ) ₃ Cl: Eu or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu series It is preferable that it is done.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only being "on top of" another part but also having another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Now, a microchip array including a light emitting diode according to an exemplary embodiment of the present invention and a full color display module including the same will be described in detail with reference to the accompanying drawings.

In the embodiment of the present invention, a high-resolution full color fluorescent display device comprising a microchip array composed of an ultraviolet light emitting diode including a GaN semiconductor material, which is used as a material for an ultraviolet light source, as a high resolution display device using a semiconductor and directly applying phosphors thereto. To produce.

GaN / InGaN materials have a small diffusion coefficient of electrons, so that even if some defects exist in the active layer of the device, there is no problem of light emission from the surroundings. In addition, in the case of using GaN / InGaN material, it is possible to fabricate a light emitting diode having a larger energy than visible light by using an energy prohibition band of a wide band, so that a desired visible light can be obtained by using a phosphor.

1 is a cross-sectional view schematically showing the structure of a light emitting diode used in the present invention,

On the substrate 10 of crystal growth composed of aluminum oxide (Al ₂ O ₃ ) or the like, known as sapphire, a buffer layer 20 made of a semiconductor material GaN or the like, an electron generating layer 30 made of GaN or the like doped with N-type impurities ), An active layer 40 made of InGaN, or the like, a P-type cladding layer 50 made of AlGaN doped with P-type impurities, and a hole generating layer 60 made of P-type GaN are sequentially formed.

Each layer 20, 30, 40, 50, 60 in this multilayer structure is formed through epitaxial growth on the substrate 10 of crystal growth composed of sapphire.

Here, the type of substrate 10 for crystal growth is selected as appropriate according to the material properties of the subsequent layers 20, 30, 40, 50, 60 to be formed by epitaxial growth. For example, when growing GaN-based semiconductor layers 20, 30, 40, 50, 60, as in this embodiment, it is appropriate to use a sapphire substrate as the substrate 10 for crystal growth.

At this time, the buffer layer 20 serves to reduce the lattice mismatch between the substrate 10 and the subsequent layers 30, 40, 50, 60 during crystal growth.

The electrode layer 70 made of a transparent conductive material having a double layer structure of Ni / Au is formed on the hole generating layer 60. The P-type pad 81 is in contact with the transparent electrode layer 70, and the N-type pad 82 is in contact with the electron generating layer 30.

Here, the P-type pad 81 may be formed in a stacked structure of Ti / Au, and the N-type pad 82 may be formed in a stacked structure of Ti / Al.

The voltage required to generate holes in the hole generation layer 60 is applied to the P-type pad 81, and the voltage required to generate electrons in the electron generation layer 30 is applied to the N-type pad 82.

Here, the transparent electrode layer 70 has a function of uniformly transferring the voltage input through the P-type pad 81 to the hole generating layer 60.

As mentioned, the active layer 40 is formed of InGaN, and a band gap of 3.06 eV and a quantum well are formed by using 1.9 eV, which is a band gap of InN, and 3.4 eV, which is a band gap of GaN. Generates the emission wavelength of the band.

Here, the emission wavelength generated by the combination of electrons and holes varies according to the type of material constituting the active layer 40. Therefore, it is preferable to form a light emitting diode by adjusting the semiconductor material constituting the active layer 40 according to which band wavelength is used.

The structure of such a light emitting diode is only one embodiment, and may be variously changed based on a PN junction according to which light emitting diode device is to be manufactured.

2 is a block diagram showing the structure of a fluorescent LED lamp including a light emitting diode according to an embodiment of the present invention.

As shown in FIG. 2, a type including a light emitting diode according to an embodiment of the present invention and a light emitting lamp include: a first body 101 having a depression 103 having a recessed trench structure; It includes a lead frame 100 consisting of a second body 102 positioned at a predetermined distance from the first body 101.

Here, the light emitting diode C is die-bonded to the depression 103 of the lead frame 100, and one of the P-type pad (see FIG. 1) and the N-type pad (see FIG. 1) of the light emitting diode C is shown. Pad is wire-bonded to the first body 101 of the lead frame 100 and electrically connected, and the other pad is wire-bonded to the second body 102 of the lead frame 100 to be electrically connected. It is. Reference numerals 201 and 202 denote wires, and in general, Au-based conductive materials having excellent malleability, ductility, and conductivity are used.

When a current flows from the P-type pad to the N-type pad in the light emitting diode C, electrons and holes of the active layer (see FIG. 1) are combined to emit light. In the light emitting diode described with reference to FIG. 1, the active layer is formed of InGaN to emit purple light.

The recess 103 of the lead frame 100 to which the light emitting diode C is bonded is filled with a red phosphor, a green phosphor, or a blue phosphor, or a mixture 200 of a phosphor and an epoxy resin mixed in an appropriate ratio. It is.

To this end, during the fabrication of a light emitting lamp including a light emitting diode, the mixture 200 of phosphor and an epoxy resin is applied to the recess 103 of the lead frame 100 and then cured. Here, the depth and width of the depression 103 of the lead frame 100 can be adjusted in various ways depending on the amount of the phosphor to be applied.

The epoxy lens 300 made of an epoxy resin seals the mixture 200 of the phosphor and the epoxy resin filling the recess 103 of the light emitting diode C and the lead frame 100. The epoxy lens 300 collects light emitted through the phosphor at a desired angle. Here, the epoxy lens 300 may be formed in a lamp shape, as shown in Figure 2, in addition to the desired various forms can be manufactured.

In a fluorescent light emitting lamp including such a light emitting diode, when a predetermined voltage is applied to the light emitting diode C, the light emitting diode C emits a predetermined wavelength band. All of these wavelengths are absorbed by the phosphor 200 and used to excite the phosphor 200, and emit red, green, or blue wavelengths depending on the type of the phosphor 200, respectively.

In the embodiment of the present invention, as shown in FIG. 3, each phosphor absorbs light or energy of the violet wavelength band emitted from the light emitting diode and converts the light or energy into red, green, or blue light. To this end, since each phosphor must absorb all the energy emitted from the light emitting diode, it is necessary to appropriately adjust the concentration and thickness of the phosphor.

In an embodiment of the present invention, a fluorescent light emitting lamp that emits light in a red, green, or blue wavelength band range may be manufactured using a light emitting diode and a red, green, or blue phosphor.

In addition, in an embodiment of the present invention, the phosphor is used to excite the light output from the light emitting diode, and in order to use the light emitted from the phosphor to display an image on the display device, the phosphor of red, green, or blue color is formed in a matrix shape. It is applied to the upper part of the microchip array arranged in order to use.

First, red, green, and blue phosphors used in a fluorescent light emitting lamp according to an embodiment of the present invention or a full color display module including the same will be described in detail with reference to the accompanying drawings.

The red phosphor in the present invention is composed of, for example, K (WO ₄ ) _1.25 : Eu, Sm or Li (WO ₄ ) _1.25 : Eu, Sm. K (WO ₄ ) _1.25 or Li (WO ₄ ) _1.25 acts as the parent of the phosphor and Eu, Sm is the doping material. Here, the mother absorbs and excites light from the light emitting diode having a wavelength band of about 405 nm, and the doping material may adjust the emission peak of the red phosphor by adjusting the concentration.

4 is a SEM photograph of such a red phosphor, and FIGS. 5 and 6 are graphs showing excitation intensity and emission intensity according to wavelengths of the red phosphor, respectively.

As shown in FIG. 5 and FIG. 6, it is possible to use the light of the wavelength band of 360 ~ 410nm as the excitation light source of the red phosphor according to the embodiment of the present invention. Therefore, the red phosphor may implement a red pixel in a red light emitting lamp or a display module by using all light emitting diodes emitting light having a wavelength range of 360 to 410 nm.

In an embodiment of the present invention, the green phosphor is composed of, for example, (BaSr) ₂ SiO ₄ : Eu. Similarly, (BaSr) ₂ SiO ₄ acts as a parent to absorb and excite 405 nm light, and Eu is used as a doping material, and the emission peak of the green phosphor can be controlled by adjusting the concentration of such doping material.

7 shows an SEM photograph of this green phosphor. 8 and 9 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the green phosphor, respectively. The green phosphor converts light excited from a light emitting diode of 410 nm or less into light having a green wavelength band. Therefore, this green phosphor is used to implement green pixels in all light emitting lamps or full color display modules that emit light in the wavelength range of 410 nm or less.

In an embodiment of the present invention, the blue phosphor is composed of (SrMg) ₅ (PO ₄ ) ₃ Cl: Eu or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu. Likewise, (SrMg) ₅ (PO ₄ ) ₃ Cl or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu acts as a parent and Eu is a doping material. The emission peak of the blue phosphor can be controlled by adjusting the concentration of the doping material.

10 shows an SEM photograph of such a blue phosphor. 11 and 12 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the blue phosphor, respectively. Such a blue phosphor may be used to convert light having a wavelength band of 410 nm or less into an excitation light source into blue. Therefore, such a blue phosphor can be manufactured using a full color display module using all light emitting lamps or blue light emitting diodes emitting light having a wavelength band of 410 nm or less.

Since the above-mentioned red phosphor, green phosphor, and blue phosphor can all excite a light source having a wavelength of 360 to 410 nm, the phosphor that is physically mixed with them can also use this band as an excitation light source. Therefore, the combination of these phosphors, which are the three primary colors of light, makes it possible to manufacture a full color display module capable of displaying all colors, and to produce a light emitting lamp that can exhibit all colors.

In the display device using the light emitting diode and the phosphor according to the exemplary embodiment of the present invention, the dopant of each of the red, green, and blue phosphors can be moved to adjust the wavelength band, and thus light similar to natural light can be obtained.

In this embodiment of the present invention, by using a light emitting diode and a phosphor together, color reproduction is superior to a specific color using only one semiconductor material as in the prior art, and the fine difference in the characteristics of the semiconductor material using the phosphor In addition, since it is not significantly affected, the process yield can be increased during the manufacturing process. In addition, since it has an optical characteristic almost similar to that of natural light, damage to the primary color to be expressed as an illumination and backlight light source can be minimized.

Next, a microchip array and a full color display module including a light emitting diode according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

13 is a block diagram showing the structure of a microchip array including a light emitting diode according to an embodiment of the present invention.

As shown in FIG. 13, in the microchip array, 16 × 16 pixels are arranged in a matrix form, and light emitting diodes for inducing light emission are disposed in each pixel, and red, green, or blue phosphors are the same or sequentially. It may be arranged. Reference numerals A1 to A16 are connected to one end of the first signal line 170 formed in the vertical direction, and receive electrical signals from the outside to N-type pads 82 (see FIG. 1) of each light emitting diode. An N-type mother pad for transmitting an electrical signal, B1-B16 is connected to the end of the second signal line 120 formed in the horizontal direction and is electrically connected to the P-type pad 81 (see FIG. 1). It is a P-type mother pad to transmit a normal signal. At this time, in order to drive each pixel, a pulse type electrical signal is applied in an address manner.

In this case, the size of the pixel is preferably 40um x 40um, and the display size is 640um × 640um except for the pad areas A1 to A16 and B1 to B16 where the pads are formed, and considering the pad area, the size of the display device is about 1 mm. It can be manufactured within × 1mm. The 12 x 9 (108) module arrangement allows for a 27,848-pixel mono display and can be as small as 12mm x 9mm.

In order to implement a high resolution full color display module capable of displaying various colors, at least one unit pixel of red, green, and blue is required.

In an embodiment of the present invention, a method of applying a phosphor directly on top of a light emitting diode is used. The basic pixel on which the image is displayed needs at least three unit pixels of adjacent red, green, and blue. In addition, the size of phosphors generally used is about 5 um and less than about 40 um x 40 um, and it is difficult to control the thickness and area accurately by the method of applying phosphors and dispensers of general LEDs. Therefore, in the present invention, a method of directly depositing a phosphor when manufacturing a light emitting diode emitting light in a 360 to 410 nm band can be used.

Next, a pixel structure of a microchip array including a light emitting diode according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 14 and 15.

FIG. 14 is a layout view illustrating in detail a structure of a pixel in a microchip array including a light emitting diode according to an exemplary embodiment of the present invention, and FIG. 15 is a cross-sectional view taken along the line XV-XV ′ of FIG. 14.

As shown in FIGS. 13 to 15, an electron generation layer 30 made of GaN or the like doped with N-type impurities is formed on a substrate 10 of crystal growth composed of aluminum oxide (Al ₂ O ₃ ) or the like, known as sapphire. It is formed in the vertical direction. In this case, a buffer layer made of GaN, which is a semiconductor material, may be formed between the substrate 10 and the electron generating layer 30. On the electron generation layer 30, a hole generation layer 60 made of GaN doped with P-type impurities is formed for each pixel. An active layer made of InGaN or the like and a P-type cladding layer made of AlGaN or the like doped with P-type impurities may be formed between the electron generation layer 30 and the hole generation layer 60.

Here, the type of substrate 10 for crystal growth is selected as appropriate depending on the material properties of the subsequent layers 30 and 60 to be formed by epitaxial growth. For example, as in this embodiment, when growing the GaN-based semiconductor layers 30 and 60, it is appropriate to use a sapphire substrate as the substrate 10 for crystal growth.

An electrode layer 70 made of a transparent conductive material having a double layer structure of Ni / Au is formed on the hole generating layer 60, and a P-type pad 81 having a stacked structure of Ti / Au is formed thereon. . In addition, an N-type pad 82 having a stacked structure of Ti / Al is in contact with the electron generating layer 30.

A first interlayer insulating film 150 made of an insulating material is formed on the P-type and N-type pads 81 and 82, and a first contact hole exposing the N-type pad 82 is formed in the first interlayer insulating film 150. 152 is formed.

The first signal line 170 connected to the N-type pad 82 through the first contact hole 152 and extending in the vertical direction is formed on the first interlayer insulating layer 150.

The second interlayer insulating layer 160 covering the first signal line 170 is formed on the first interlayer insulating layer 150, and the P-type pad is formed on the second interlayer insulating layer 160 together with the first interlayer insulating layer 150. A second contact hole 161 exposing the 81 is formed.

A second signal line 120 connected to the P-type pad 81 through the second contact hole 161 and extending in the horizontal direction is formed on the second interlayer insulating layer 160.

The structure of such a light emitting diode is only one embodiment, and may be variously changed based on a PN junction according to which light emitting diode device is to be manufactured.

16 is a cross-sectional view illustrating a structure of a unit pixel in a full color display module including a fluorescent light emitting diode including red, green, and blue phosphors.

As shown in FIG. 16, most of the structures are the same as in FIG.

However, red, green, and blue phosphors R, G, and B are sequentially formed on the substrate 10.

This structure is a red, green and blue phosphor (R, G, B) using a photolithography process and a lift-off process on the microchip array including the light emitting diode fabricated as shown in FIG. Is a structure formed sequentially.

At this time, the deposition of the phosphor may be an electron beam or a thermal evaporator, it is repeated two more times through the same process to form red, green, blue phosphors, respectively.

In the full-color module including the light emitting diode according to the embodiment of the present invention, when a current is applied to a desired light emitting diode, the light emitting diode emits light, and the emitted light is absorbed by the phosphor to determine a predetermined color according to the type of the phosphor. Release. At this time, it is important to absorb all of the ultraviolet wavelength, and to control the thickness of the phosphor is very important to display the desired color.

On the other hand, another method may be a method of using three layers of fluorescent dots or strip films of red, green, and blue, respectively, on a substrate having a structure as shown in FIG. 14, in which phosphors are not applied.

In the display module including the light emitting diode according to the exemplary embodiment of the present invention, since the driving voltage can be applied independently regardless of the color, the driving circuit can be simply manufactured. In addition, the time-output characteristics are similar regardless of color, so there is no fear of color balance after time passes. In addition, since various colors can be expressed, the present invention can be used for a guide display device that can be seen in a subway.

The manufacturing process sequence of the full color display module using the light emitting diode according to the embodiment of the present invention is as follows.

First, the wafer in which the crystal layer is successively grown on the sapphire substrate 10 with the buffer layer, the electron generating layer 30, and the active layer and the hole generating layer 60 is subjected to a photolithography process using a mask in the middle of the electron generating layer 30. The portion is etched and the electron generating layer 30 is removed again through the photolithography process until the sapphire substrate 10 is exposed to insulate the light emitting diodes positioned in the respective pixels. In this case, as shown in FIGS. 13 and 14, the isolation between the light emitting diodes is not required in the vertical alignment, and thus the photolithography process may be simplified. Subsequently, an insulating material such as SiO ₂ or SiN is stacked to form the first interlayer insulating layer 150, and then portions to be connected to the semiconductor and the outside are etched to form the first contact holes 152. The first signal line 170 is formed by stacking a conductive material and patterning the photolithography process using a mask. Subsequently, the second contact hole 161 is formed by stacking and patterning the second interlayer insulating layer 160, and then the second signal line 120 is formed by stacking and patterning a conductive material. In this case, the first signal line 170 and the second signal line 120 cross each other and are insulated from each other by the second interlayer insulating layer 160. The light emitted by the image is generated in three pixels, and the light emitting area of each pixel can be produced in a size of about 20 μm × 20 μm. Since the PN junction region is 1/100 to 200 compared to the general light emitting diode, considering the current density, the driving current of each light emitting diode of each pixel is about 0.1 to 0.2 mA and power consumption in the range of 0.35 to 0.7 mW is required.

The microchip array and the full color display module using the light emitting diode according to the present invention may have a high resolution display capability due to small size, durability, and high resolution. In particular, according to the recent miniaturization of various portable information communication and information processing devices or devices, it is expected that there will be many ripple effects in the development of device technology by using light emitting diodes of high energy ultraviolet region.

Claims (14)

A microchip array comprising light emitting diodes each of which has a pixel of 40 µm x 40 µm or less, arranged in a matrix, and formed in each of the pixels. The microchip array of claim 1, Phosphor that absorbs the light emitted from the light emitting diode and converts it into light having a predetermined wavelength and emits light Full color display module comprising a. In claim 1, The phosphor is a red phosphor, a green phosphor, or a blue phosphor, or a phosphor formed by mixing at least two of these phosphors. In claim 3, The red phosphor is composed of K (WO ₄ ) _1.25 : Eu, Sm or Li (WO ₄ ) _1.25 : Eu, Sm series, The green phosphor is composed of (BaSr) ₂ SiO ₄ : Eu series, The blue phosphor is (SrMg) ₅ (PO ₄ ) ₃ Cl: Eu or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu series is a full-color display module. In claim 1, The light emitting diode includes a full color display module including an active layer containing InGaN. A substrate having pixels of a matrix array, An electron generation layer formed in each of the pixels and doped with impurities of a first conductivity type, A hole generation layer formed on the electron generation layer of the pixel and doped with impurities of a second conductivity type, A first pad formed on the electron generation layer, A second pad formed on the hole generation layer; A first signal line electrically connected to the electron generation layer of the pixel through the first pad; A second signal line insulated from and intersecting the first signal line and electrically connected to the hole generation layer of the pixel through the second pad; Microchip array comprising a. In claim 6, And the electron generating layer or the hole generating layer comprises GaN. In claim 6, The electron generation layer extends in the column direction of the pixel. In claim 6, A buffer layer formed between the substrate and the electron generating layer and including GaN, An active layer formed between the electron generation layer and the hole generation layer and including InGaN, And a second conductivity type cladding layer comprising AlGaN doped with a second conductivity type impurity. In claim 6, The microchip array formed on the hole generating layer and further comprising an electrode layer made of a transparent conductive material. In claim 6, And the hole generating layer is insulated from the pixels, respectively. The microchip array of any one of claims 6 to 11 And a red, green, or blue phosphor that is applied to the pixels in the same or sequentially order. In claim 12, The red phosphor is composed of K (WO ₄ ) _1.25 : Eu, Sm or Li (WO ₄ ) _1.25 : Eu, Sm series, The green phosphor is composed of (BaSr) ₂ SiO ₄ : Eu series, The blue phosphor is (SrMg) ₅ (PO ₄ ) ₃ Cl: Eu or (SrBa) ₅ (PO ₄ ) ₃ Cl: Eu series is a full-color display module. In claim 12, The pixel has a size of 40 μm × 40 μm or less.