KR100922079B1 - 다층 세라믹 기판 - Google Patents
다층 세라믹 기판 Download PDFInfo
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- KR100922079B1 KR100922079B1 KR1020070137346A KR20070137346A KR100922079B1 KR 100922079 B1 KR100922079 B1 KR 100922079B1 KR 1020070137346 A KR1020070137346 A KR 1020070137346A KR 20070137346 A KR20070137346 A KR 20070137346A KR 100922079 B1 KR100922079 B1 KR 100922079B1
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- Prior art keywords
- ceramic substrate
- conductor
- surface conductor
- glass
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 121
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 239000004020 conductor Substances 0.000 claims abstract description 119
- 239000011521 glass Substances 0.000 claims abstract description 34
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 17
- 239000000945 filler Substances 0.000 claims abstract description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 27
- 239000000853 adhesive Substances 0.000 abstract description 22
- 230000001070 adhesive effect Effects 0.000 abstract description 21
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 73
- 239000000203 mixture Substances 0.000 description 10
- 238000010304 firing Methods 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- -1 However Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1163—Chemical reaction, e.g. heating solder by exothermic reaction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Al2O3 필러 함유량 (체적%) | 이측 가압 강도(N) | 열화율(%) | |
PCT 전 | PCT 후 | ||
20 | 40.3 | 11.3 | 72.0 |
25 | 46.3 | 11.6 | 74.9 |
30 | 50.1 | 10.5 | 79.0 |
32 | 66.2 | 32.2 | 51.4 |
34 | 65.8 | 52.8 | 19.8 |
35 | 66.1 | 56.2 | 15.0 |
36 | 57.8 | 52.0 | 10.0 |
38 | 52.4 | 59.5 | -13.5 |
40 | 70.9 | 68.9 | 2.8 |
45 | 소결하지 않음 | 소결하지 않음 | - |
Claims (7)
- 삭제
- 삭제
- 복수의 세라믹 기판층이 적층된 적층체의 적어도 한쪽의 표면에 표면 도체를 갖는 다층 세라믹 기판에 있어서,상기 세라믹 기판층 중의 세라믹 성분과 상기 표면 도체 중의 유리 성분이 반응함으로써 형성된 반응상(反應相)이 상기 세라믹 기판층과 표면 도체의 계면에 석출되고,적어도 상기 표면 도체와 접하는 상기 세라믹 기판층이 Al2O3를 필러 성분으로 하는 유리 세라믹에 의해 형성되는 것과 함께, 상기 표면 도체가 유리 성분으로서 Zn을 포함하고,상기 반응상으로서 ZnAl2O4를 포함하며,상기 표면 도체와 접하는 세라믹 기판층은, 적어도 표면 도체와 접하는 부분에 있어서의 Al2O3의 함유량이 34체적% 이상, 40체적% 이하인 것을 특징으로 하는, 다층 세라믹 기판.
- 삭제
- 제 3 항에 있어서,상기 표면 도체와 접하는 세라믹 기판층은, 적어도 표면 도체와 접하는 부분에 있어서의 Al2O3 함유량이 다른 부분에 있어서의 Al2O3 함유량보다도 큰 것을 특징으로 하는, 다층 세라믹 기판.
- 삭제
- 제 5 항에 있어서,상기 표면 도체와 접하는 세라믹 기판층은, 표면 도체와 접하는 측의 면에 Al2O3 함유량이 34체적% 이상, 40체적% 이하인 표면 유리 세라믹층을 갖는 것을 특징으로 하는, 다층 세라믹 기판.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00350628 | 2006-12-26 | ||
JP2006350628A JP4279869B2 (ja) | 2006-12-26 | 2006-12-26 | 多層セラミックス基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080060184A KR20080060184A (ko) | 2008-07-01 |
KR100922079B1 true KR100922079B1 (ko) | 2009-10-16 |
Family
ID=39282678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070137346A KR100922079B1 (ko) | 2006-12-26 | 2007-12-26 | 다층 세라믹 기판 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7662477B2 (ko) |
EP (1) | EP1940210B1 (ko) |
JP (1) | JP4279869B2 (ko) |
KR (1) | KR100922079B1 (ko) |
CN (1) | CN101209929B (ko) |
DE (1) | DE602007008043D1 (ko) |
TW (1) | TW200843603A (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
US9420707B2 (en) * | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
JP5644945B2 (ja) * | 2011-06-29 | 2014-12-24 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
US9445496B2 (en) | 2012-03-07 | 2016-09-13 | Intel Corporation | Glass clad microelectronic substrate |
US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
JP6624282B2 (ja) | 2016-04-28 | 2019-12-25 | 株式会社村田製作所 | 多層セラミック基板 |
CN115745577B (zh) * | 2022-10-19 | 2023-09-22 | 中国建筑材料科学研究总院有限公司 | 一种超薄低温烧结陶瓷基板的制备方法 |
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JP2003277852A (ja) * | 2002-03-25 | 2003-10-02 | Kyocera Corp | 銅メタライズ組成物およびセラミック配線基板 |
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JP2006216700A (ja) * | 2005-02-02 | 2006-08-17 | Ngk Spark Plug Co Ltd | セラミック多層基板及びその製造方法 |
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DE3322079A1 (de) | 1983-06-20 | 1984-12-20 | Cassella Ag, 6000 Frankfurt | Tetrahydropyridazinonderivate, verfahren zu ihrer herstellung und ihre verwendung |
JPH06237081A (ja) | 1993-02-10 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 多層セラミック基板の製造方法 |
JPH09221375A (ja) | 1996-02-14 | 1997-08-26 | Sumitomo Metal Ind Ltd | セラミックス基板及びその製造方法 |
JPH11135899A (ja) | 1997-10-30 | 1999-05-21 | Kyocera Corp | セラミック回路基板 |
JP2001028474A (ja) | 1999-05-12 | 2001-01-30 | Tdk Corp | 電子部品及びその製造方法 |
JP3680684B2 (ja) * | 2000-03-06 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
JP3680713B2 (ja) * | 2000-07-21 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
JP2002338341A (ja) | 2001-05-14 | 2002-11-27 | Ngk Spark Plug Co Ltd | 低温焼成磁器及びその製造方法並びに配線基板 |
KR100506731B1 (ko) * | 2002-12-24 | 2005-08-08 | 삼성전기주식회사 | 저온 소성 유전체 조성물, 적층 세라믹 커패시터 및세라믹 전자부품 |
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- 2006-12-26 JP JP2006350628A patent/JP4279869B2/ja not_active Expired - Fee Related
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2007
- 2007-12-10 US US12/000,177 patent/US7662477B2/en active Active
- 2007-12-13 TW TW96147733A patent/TW200843603A/zh not_active IP Right Cessation
- 2007-12-20 EP EP20070024830 patent/EP1940210B1/en not_active Not-in-force
- 2007-12-20 DE DE200760008043 patent/DE602007008043D1/de active Active
- 2007-12-26 KR KR1020070137346A patent/KR100922079B1/ko active IP Right Grant
- 2007-12-26 CN CN2007103072016A patent/CN101209929B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003277852A (ja) * | 2002-03-25 | 2003-10-02 | Kyocera Corp | 銅メタライズ組成物およびセラミック配線基板 |
JP2005216998A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | セラミック回路基板及びその製造方法 |
JP2005285957A (ja) * | 2004-03-29 | 2005-10-13 | Kyoto Elex Kk | 導電性ペースト及びその導電性ペーストを用いたセラミック多層回路基板。 |
JP2006216700A (ja) * | 2005-02-02 | 2006-08-17 | Ngk Spark Plug Co Ltd | セラミック多層基板及びその製造方法 |
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EP1940210A2 (en) | 2008-07-02 |
TWI358982B (ko) | 2012-02-21 |
CN101209929B (zh) | 2012-09-05 |
US7662477B2 (en) | 2010-02-16 |
JP4279869B2 (ja) | 2009-06-17 |
TW200843603A (en) | 2008-11-01 |
JP2008166307A (ja) | 2008-07-17 |
EP1940210A3 (en) | 2009-07-08 |
DE602007008043D1 (de) | 2010-09-09 |
US20080152928A1 (en) | 2008-06-26 |
EP1940210B1 (en) | 2010-07-28 |
CN101209929A (zh) | 2008-07-02 |
KR20080060184A (ko) | 2008-07-01 |
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