KR100928951B1 - Method of flowing chemical, and method and apparatus of manufacturing integrated circuit device using the same - Google Patents

Abstract

PURPOSE: A method of flowing chemical, and a method and an apparatus of manufacturing an integrated circuit device using the same are provided to transfer a substrate for a subsequent processes stably by discharging a chemical outside of a bath. CONSTITUTION: A manufacturing device(100) of an integrated circuit device includes a bath(11), a chemical feed port(13), and a chemical discharge unit(15). The chemical is flowed into the bath so that the bath accommodates the chemical. The substrate is dipped into the chemical in the bath, and the substrate is processed with a chemical. The substrate is bent by drag, buoyancy and composition of forces.

Description

Chemical flow method, and method and apparatus for manufacturing an integrated circuit device using the same {Method of flowing chemical, and Method and Apparatus of manufacturing integrated circuit device using the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical flow method, and a method and apparatus for manufacturing an integrated circuit device using the same, comprising a method of flowing a chemical such as a cleaning liquid, an etchant, and a method for manufacturing an integrated circuit device such as a semiconductor device and a flat panel display device. And to an apparatus.

In general, in the fabrication of integrated circuit devices such as semiconductor devices and flat panel display devices, a unit process using chemicals such as a cleaning liquid, an etching liquid, and the like is repeatedly performed. As an example of a unit process, the washing | cleaning process using a washing | cleaning liquid, the etching process using an etching liquid, etc. are mentioned here. In the unit process using the chemicals mentioned, the baths containing the chemicals are mainly used. In performing a unit process using a bath, a substrate for manufacturing an integrated circuit device is dipped in a chemical contained in the bath, or a substrate for manufacturing an integrated circuit device is placed in the bath, and then the chemical is placed into the bath. Flows. Here, when the integrated circuit device is a semiconductor device, the substrate may be a semiconductor wafer, and when the integrated circuit device is a flat panel display device, the substrate may be a glass substrate.

However, in the performance of the unit process using the bath mentioned above, the substrate is frequently warped. In particular, in the case of a large-area glass substrate, a serious bending situation may occur. This is due to the shape of the substrate located inside the bath, the direction of the chemical flowing into the bath, etc. when performing the unit process. That is, when the substrate is dipped, when the substrate is dipped parallel to the bottom of the bath or when the chemical is flowed, the chemical is flowed from the bottom of the substrate to the back of the substrate, so that buoyancy, drag, etc. are applied to the substrate, and as a result, the substrate is bent. This is what happens.

As such, when the substrate is bent while performing the unit process using the bath, it causes a defect in the process, and also causes a malfunction in the transfer of the substrate due to a malfunction of a sensor that senses the substrate when transferring the substrate for subsequent processing. Can give

It is a first object of the present invention to provide a chemical flow method for reducing warpage of a substrate for fabricating an integrated circuit device.

It is a second object of the present invention to provide methods for manufacturing an integrated circuit device to which the aforementioned chemical flow method is applied.

A third object of the present invention is to provide apparatuses for manufacturing an integrated circuit device for easily performing the aforementioned methods of manufacturing the integrated circuit device.

In the chemical flow method according to an embodiment of the present invention for achieving the first object, if a portion of the substrate located inside the bath due to the flow of the chemical is bent after the flow of the chemical in the substrate The chemical flows out of the bath so that a portion of the substrate flows to a portion of the substrate such that a force acts in a direction opposite to the force applied to the portion of the substrate.

An integrated circuit device manufacturing method according to an embodiment of the present invention for achieving the second object is to flow the chemical into the bath to accommodate the chemical in the bath. The substrate is dipped into the chemical contained in the bath so that the substrate for manufacturing the integrated circuit device is locked, and then the substrate is processed using the chemical. In addition, when the substrate is processed using the chemical, when a portion of the substrate is bent, the chemical contained in the portion of the substrate is flowed out of the bath from among the chemicals contained in the bath.

In the method of manufacturing an integrated circuit device according to an embodiment of the present invention, a portion of the substrate may be bent by drag, buoyancy, or the like.

In the method of fabricating an integrated circuit device according to an embodiment of the present invention, the substrate may be dipped parallel to the bottom of the bath.

In the method of manufacturing an integrated circuit device according to an embodiment of the present invention, a chemical contained in a portion of the substrate may flow out of the bottom of a portion of the substrate, particularly under a portion of the substrate. In through the bottom of the bath may be a chemical contained in a portion of the substrate to the outside of the bath flow.

In the method of manufacturing an integrated circuit device according to an embodiment of the present invention, the chemical flowed out of the bath may flow back into the bath.

According to another aspect of the present invention, there is provided a method of manufacturing an integrated circuit device, which transfers a substrate for manufacturing the integrated circuit device into a bath. Subsequently, the substrate is flowed into the bath so that the substrate transferred into the bath is locked, and then the substrate is processed by using the chemical which flowed so that the substrate is locked. In addition, when a substrate is processed using the chemical, when a portion of the substrate is bent, the chemical flowing to a portion of the substrate flows out of the bath.

In the method of manufacturing an integrated circuit device according to another embodiment of the present invention, when the substrate is transferred into the bath, the substrate may be transferred into the bath in parallel with the bottom of the bath, in particular through the side of the bath. The substrate may be transferred into the bath parallel to the bottom of the bath. In addition, when the substrate is transferred into the bath, the substrate may be transferred using a roller installed inside the bath, in which case the roller contacts the upper roller and the back surface of the substrate. It may include a lower roller.

In the method of manufacturing an integrated circuit device according to another embodiment of the present invention, when the chemical flows into the bath, the chemical may flow from below the back of the substrate to the bottom of the substrate, and in particular, some of the chemicals may be in the substrate. It may flow from the outside to the center of the substrate.

In a method of manufacturing an integrated circuit device according to another exemplary embodiment of the present disclosure, a portion of the substrate may include a central portion of the substrate, and a portion of the substrate may be bent by drag, buoyancy, or the like. .

In the method of manufacturing an integrated circuit device according to another embodiment of the present invention, when the chemical flows to a part of the substrate to flow out of the bath, the chemical may flow out of the bath under the part of the substrate. In particular, it is possible to flow the chemical out of the bath through the bottom of the bath under a portion of the substrate.

In the method of manufacturing an integrated circuit device according to another embodiment of the present invention, the chemical flowed out of the bath may flow back into the bath.

An apparatus for manufacturing an integrated circuit device according to an exemplary embodiment of the present invention for achieving the third object includes a bath accommodating a chemical therein, a chemical supply unit for flowing a chemical inside the bath, and a bath housed in the bath. When a part of the substrate is bent while processing the substrate by dipping a substrate for manufacturing the integrated circuit device into the chemical, the chemical contained in the part of the substrate flows out of the bath among the chemicals contained in the bath. And a chemical outlet.

In the apparatus for manufacturing an integrated circuit device according to an exemplary embodiment of the present disclosure, the chemical discharge part may include a discharge line installed outside the bath and a pump connected to the discharge line under a portion of the substrate. In particular, the discharge line may be installed outside the bath through the bottom of the bath under a portion of the substrate.

In the apparatus for manufacturing an integrated circuit device according to an exemplary embodiment of the present disclosure, the apparatus may further include a chemical circulation unit configured to flow back the chemical flowing out of the bath through the chemical discharge unit into the bath.

In the apparatus for manufacturing an integrated circuit device according to an embodiment of the present invention, receiving a sensor for sensing a portion of the substrate is bent and a sensing signal of the sensor, and controlling the operation of the chemical discharge unit by the sensing signal The control unit may further include.

An apparatus for manufacturing an integrated circuit device according to another exemplary embodiment of the present invention for achieving the third object includes a bath in which a substrate for manufacturing the integrated circuit device is located, and a chemical inside the bath in which the substrate is located. When the substrate is processed by using a chemical supply part to flow and a chemical flowing into the bath, a chemical discharged to flow out of the bath flows a chemical flowed to a part of the substrate when a part of the substrate is bent. Contains wealth.

In the apparatus for manufacturing an integrated circuit device according to another embodiment of the present invention, it may further include a roller installed inside the bath, the roller for transferring the substrate into the bath, in particular the roller is in the outer portion of the upper surface of the substrate It may include an upper roller in contact with the lower roller in contact with the back surface of the substrate, when the roller is installed in the bath in this way, is installed to open and close on the side of the bath, the inside of the bath through the bath side It may further include a transfer window for providing a path for transferring the substrate to the roller installed.

In the apparatus for manufacturing an integrated circuit device according to another embodiment of the present invention, the chemical supply unit may flow the chemical into the bath so that the substrate located inside the bath is locked, in which case the chemical supply unit is the back surface of the substrate A supply line installed below the substrate and a pump connected to the supply line, in particular the supply line may be installed from the bottom of the substrate through the bath bottom to the bottom of the substrate, and The supply line may be installed such that a part of the chemical flows from the outer periphery of the substrate toward the center of the substrate.

In the apparatus for manufacturing an integrated circuit device according to another embodiment of the present invention, the chemical discharge portion may include a discharge line installed to the outside of the bath and a pump connected to the discharge line below a portion of the substrate, In particular, the discharge line may be installed outside the bath through the bottom of the bath under a portion of the substrate.

In the apparatus for manufacturing an integrated circuit device according to another exemplary embodiment of the present disclosure, the apparatus may further include a chemical circulation unit configured to flow back the chemical flowing out of the bath through the chemical discharge part into the bath.

In the apparatus for manufacturing an integrated circuit device according to another embodiment of the present invention, receiving a sensor for sensing a portion of the substrate is bent and a sensing signal of the sensor, and controls the operation of the chemical discharge unit by the sensing signal The control unit may further include.

In the present invention, when a portion of the substrate is bent due to the dipping of the substrate or the flow of the chemical, the chemical flowed to a portion of the substrate or the chemical contained in the portion of the substrate is discharged to the outside of the bath. As such, when the chemical is discharged to the outside of the bath, suction force is generated around a portion of the substrate where the chemical is discharged, and the suction force mentioned above is opposite to the buoyancy, drag force, compounding force thereof, and the like which cause the substrate to bend due to the chemical. In the case of adjusting the function, the warpage of the substrate can be sufficiently reduced. In particular, the present invention can reduce the situation that the substrate is bent due to the chemical by only a simple structural change of the manufacturing apparatus.

Therefore, the present invention can sufficiently reduce the defects in the unit process for manufacturing the integrated circuit device using the bath, and can also stably transfer the substrate for the subsequent process. Therefore, the present invention can be expected to improve the reliability and productivity according to the manufacture of the integrated circuit device.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Example 1

1 is a schematic configuration diagram showing an apparatus for manufacturing an integrated circuit device according to Embodiment 1 of the present invention.

Referring to FIG. 1, the apparatus 100 for manufacturing an integrated circuit device includes a bath 11, a chemical supply part 13, a chemical discharge part 15, and the like, and a chemical circulation part 17 and a sensor 19. And a control unit 21 and the like. Examples of the integrated circuit elements include semiconductor elements, flat panel display elements, and the like. In addition, when an integrated circuit element is a semiconductor element, the board | substrate 10 mentioned later may be mentioned as a semiconductor wafer, and when an integrated circuit element is a flat panel display element, a glass substrate etc. may be mentioned as an example of the board | substrate 10 mentioned later. have.

Specifically, the bath 11 is a member for receiving a chemical therein. As an example of the chemical accommodated in the bath 11, a washing | cleaning liquid, an etching liquid, etc. are mentioned. Thus, examples of the manufacturing apparatus 100 mentioned above include a cleaning apparatus, an etching apparatus and the like having the bath 11.

The chemical supply part 13 is a member that flows into the bath 11, and by using the chemical supply part 13 to flow the chemical into the bath 11, a predetermined amount of chemical is continuously accommodated in the bath 11. Maintain state. In this case, the chemical supply part 13 is installed to flow the chemical from the lower surface of the substrate 10 to the lower surface of the substrate 10 as shown in the reference numeral 23 mainly in the bath 11. Accordingly, the chemical supply unit 13 includes a supply line 13a installed below the substrate 10 under the substrate 10 and a pump 13b connected to the supply line 13a. Although not shown, a valve capable of opening and closing may be further installed in the supply line 13a. Here, the pump 13b is installed to smoothly flow the chemical by the pumping operation. In particular, the chemical supply unit 13 is described as being provided so that the chemical flows from the rear surface of the substrate 10 to the rear surface of the substrate 10, but is not limited thereto. That is, as mentioned above, when the chemical flow is possible inside the bath 11, the chemical supply part 13 may have various structures. In addition, the number of the chemical supply unit 13 is not limited. That is, the chemical supply unit 13 can be installed regardless of the number. In addition, the chemical supply part 13 is not limited to the installation position, either. That is, the chemical supply unit 13 can be installed at various positions.

The chemical discharge part 15 is a member that flows the chemical contained in the bath 11 to the outside of the bath 11, and dips the substrate 10 into the chemical inside the bath 11 to process the substrate 10. When a portion of the substrate 10 is bent, the chemical contained in the portion of the substrate 10 is installed to flow outward. Accordingly, the chemical discharge part 15 is preferably installed concentrated in a portion close to the portion where the substrate 10 is bent, and in particular, the chemical flows out of the bath 11 under the rear surface of the portion of the substrate 10. It is more preferable to install. The chemical discharge part 15 includes a discharge line 15a installed outside the bath 11 under a portion of the substrate 10 and a pump 15b connected to the discharge line 15a. In particular, the discharge line 15a is preferably installed to flow the chemical out of the bath 11 through the bottom of the bath 11 under a part of the substrate 10. In addition, the pump 15b is installed to smoothly flow the chemical out of the bath 11 under a part of the substrate 10 through a pumping operation. Although not shown, the discharge line 15a may be further provided with a valve capable of opening and closing. In addition, the chemical discharge part 15 is not limited to the number of installation when the substrate 10 is installed in a portion where the substrate 10 is bent.

As such, the apparatus 100 for manufacturing an integrated circuit device of Embodiment 1 of the present invention includes the bath 11, the chemical supply part 13, and the chemical discharge part 15 mentioned above. Thus, a method of using the integrated circuit device manufacturing apparatus 100 including the bath 11, the chemical supply unit 13, and the chemical discharge unit 15 will be described below.

FIG. 2 is a flowchart illustrating an example of using the apparatus for manufacturing the integrated circuit device of FIG. 1.

Referring to FIG. 2, the chemical is accommodated in the bath 11 (S201). That is, the chemical is flowed into the bath 11 by using the chemical supply part 13 to accommodate the chemical in the bath 11. will be.

Subsequently, the substrate 10 for fabricating the integrated circuit device is dipped into the chemical contained in the bath 11. (S203) At this time, the substrate 10 is dipped to be submerged in the chemical. In addition, the substrate 10 may be dipped in parallel with the bottom of the bath 11. The substrate 10 is processed in a state in which the substrate 10 is dipped in the chemical. (S205) Here, the processing of the substrate 10 uses a member such as a brush, shakes the substrate 10, or baths. (11) It can be achieved by continuously flowing the chemical therein, but is not limited thereto.

However, when the substrate 10 is dipped into the chemical contained in the bath 11, a part of the substrate 10 may be bent. This is because drag, buoyancy, etc. act as a part of the substrate 10 in the direction indicated by reference numeral 25. At this time, the drag, buoyancy, etc. mentioned may act alone, or the combined force of drag and buoyancy may work in combination. Thus, the chemical discharged part 15 is used to flow the chemical contained in the portion of the substrate 10 to the outside of the bath 11. (S209) As described above, the chemical contained in the portion of the substrate 10 is bathed. 11) When discharged to the outside, suction force is generated in a portion of the substrate 10 in the direction as shown by reference numeral 27. Accordingly, a part of the substrate 10 due to the dipping of the substrate 10 by canceling the drag force, buoyancy force, the synthetic force thereof, etc. acting in the same direction as the reference numeral 25 mentioned as the suction force generated in the direction shown by reference numeral 27 This warpage can be sufficiently reduced.

As described above, in the process using the apparatus 100 for manufacturing an integrated circuit device according to Embodiment 1 of the present invention, the substrate 10 is manufactured by dipping the substrate 10 into a chemical contained in the bath 11. When a part of the substrate 10 is bent when the processing is performed, the situation in which the part of the substrate 10 is bent may be reduced by flowing the chemical contained in the part of the bath 11 to the outside of the bath 11. Can be.

In the first embodiment of the present invention, the portion where the substrate 10 is bent is limited to the center portion, and correspondingly, the chemical discharge portion 15 is also provided on the rear surface of the center portion of the substrate 10. It can be understood that the chemical discharge part 15 is installed on the basis of the portion 10) that is intensively bent. In addition, although the chemical discharge part 15 is provided so that chemicals may flow out of the bath 11 under the back surface of the board | substrate 10, the buoyancy force, drag force, the compounding force, etc. which generate the bending of the board | substrate 10, etc. are provided. It can be understood that the suction force generated by the chemical discharge part 15 acts in the opposite direction.

In addition, the chemicals lost by flowing out of the bath 11 through the chemical discharge part 15 may be continuously replenished through the chemical supply part 13 so that a certain amount of chemical may be accommodated in the bath 11.

In addition, the apparatus 100 for manufacturing an integrated circuit device of FIG. 1 may further include a chemical circulation unit 17, a sensor 19, a controller 21, and the like.

The chemical circulation part 17 is a member that flows the chemical flowing out of the bath 11 through the chemical discharge part 15 back into the bath 11. Accordingly, the chemical circulation unit 17 is connected to the chemical discharge unit 15 so as to flow the chemical into the bath 11 or connected between the chemical discharge unit 15 and the chemical supply unit 13 to supply the chemical supply unit ( 13 may be installed to flow the chemical into the bath (11). In this manner, the chemical is circulated using the chemical circulation unit 17 to maintain a predetermined amount of the chemical in the bath 11. Thus, the amount of chemical lost due to flow outside the bath 11 through the chemical discharge unit 15 can be reduced.

In addition, the sensor 19 and the controller 21 are members installed to implement the automation of the apparatus 100 for manufacturing the integrated circuit device of Embodiment 1, and the sensor 19 is a part of the substrate 10 by dipping. Sensing this bending, the control unit 21 receives the sensing signal of the sensor 19, and controls the operation of the chemical discharge unit 21 by the sensing signal. Here, the sensor 19 may be provided as a member for sensing a distance interval, and the like, and the controller 21 may be provided as an IC chip in which a program for determining an operation command of the chemical discharge unit 15 is input. . As described above, the sensor 19 and the controller 21 may be provided to operate the chemical discharge part 15 only when a part of the substrate 10 is bent by dipping. Thus, by providing the sensor 19 and the controller 21 mentioned above, it is possible to actively cope with the situation in which a part of the substrate 10 is bent by dipping.

As described above, the apparatus 100 for manufacturing an integrated circuit device of Embodiment 1 of the present invention includes the bath 11, the chemical supply unit 13, the chemical discharge unit 15, the chemical circulation unit 17, and the sensor 19. ), The control unit 21 and the like. Therefore, hereinafter, the apparatus 100 for manufacturing an integrated circuit device including the bath 11, the chemical supply unit 13, the chemical discharge unit 15, the chemical circulation unit 17, the sensor 19, and the control unit 21. It will be described how to use.

3 is a flowchart for explaining another example of using the apparatus for manufacturing the integrated circuit device of FIG. 1.

Referring to FIG. 3, the chemical is accommodated in the bath 11 (S301). That is, the chemical is flowed into the bath 11 using the chemical supply part 13 to accommodate the chemical in the bath 11. will be.

Subsequently, the substrate 10 for fabricating an integrated circuit device is dipped into the chemical contained in the bath 11. (S303) At this time, the substrate 10 is dipped to be immersed in the chemical. In addition, the substrate 10 may be dipped in parallel with the bottom of the bath 11. Then, the substrate 10 is processed in a state where the substrate 10 is dipped in the chemical. (S305) In particular, in the case of step S305 of FIG. 3, a member such as a brush or the like is used as in step S205 of FIG. The processing of the substrate 10 can be accomplished by shaking the 10 or continuously flowing the chemical inside the bath 11.

Subsequently, the sensor 19 is used to sense whether there is a portion of the substrate 10 that is bent due to the dipping (S307 and S309). And when the portion of the substrate 10 is bent and sensed, the sensor 19 is sensed. The controller 21 outputs a sensing signal to the controller 21, and the controller 21 receiving the sensing signal instructs the chemical discharge unit 15 to operate. Thus, the chemical discharged part 15 is used to flow the chemical contained in the portion of the substrate 10 to the outside of the bath 11. (S311) As described above, the chemical contained in the portion of the substrate 10 is bathed. 11) When discharged to the outside, suction force is generated in a portion of the substrate 10 in the direction as shown by reference numeral 27. Accordingly, a part of the substrate 10 due to the dipping of the substrate 10 by canceling the drag force, buoyancy force, the synthetic force thereof, etc. acting in the same direction as the reference numeral 25 mentioned as the suction force generated in the direction shown by reference numeral 27 This warpage can be sufficiently reduced.

Then, the chemical that flows out of the bath 11 is flowed back into the bath 11 using the chemical circulation unit 17. (S313) As described above, the chemical is flowed using the chemical circulation unit 17 to the bath 11. By reflowing into the inside), a certain amount of chemical is continuously maintained inside the bath 11, and in particular, the consumption of the chemical can be significantly reduced.

In addition, when the sensor 19 and the controller 21 are provided, the chemical discharge part 15 may be provided in various parts to more actively cope with the situation in which the substrate 10 is bent by the chemical. That is, the substrate 10 is accurately sensed to bend the part, and through this the chemical discharge part 15 installed in the various parts through the chemical discharge unit 15 is located in a portion of the substrate 10 through the bath ( 11) can be achieved by flowing outward.

In the case of the manufacturing method of dipping the substrate 10 in the chemical contained in the bath 11 as in the first embodiment of the present invention, the present invention can be more actively applied to a semiconductor device among integrated circuit devices.

As such, when the apparatus and the method of the first exemplary embodiment of the present invention are used, the situation where the substrate 10 is bent by the chemical in the unit process using the chemical can be sufficiently reduced. Therefore, it is possible to improve the reliability in the unit process by reducing the defects caused by the warpage of the substrate 10, as well as to perform the subsequent process stably to the transfer of the substrate 10 in accordance with the manufacture of the integrated circuit device Productivity can be improved.

Example 2

4 is a schematic configuration diagram showing an apparatus for manufacturing an integrated circuit device according to Embodiment 2 of the present invention.

Referring to FIG. 4, the apparatus 400 for manufacturing an integrated circuit device includes a bath 41, a chemical supply part 43, a chemical discharge part 45, and the like. In addition, a roller 63 and a transfer window 65a described later. And 65b), the chemical circulation unit 47, the sensor 49, the control unit 51, and the like. As in the first embodiment mentioned above, also in the second embodiment, examples of the integrated circuit device include a semiconductor device and a flat panel display device. In addition, when an integrated circuit element is a semiconductor element, a semiconductor wafer etc. are mentioned as an example of the board | substrate 40. When an integrated circuit element is a flat panel display element, a glass substrate etc. are mentioned as an example of the board | substrate 40. FIG.

Specifically, the bath 41 is a member 40 having a substrate 40 for manufacturing an integrated circuit device therein and accommodating the chemical flowing from the chemical supply 43. As mentioned above, the chemical supply part 43 is a member that flows the chemical into the bath 41 in which the substrate 40 is located. In particular, the manufacturing apparatus 400 of Example 2 has the structure which flows a chemical into the bath 41, after placing the board | substrate 40 inside the bath 41. FIG. That is, since the chemical is not accommodated in the bath 41 or the substrate 40 located in the bath 41 is not sufficiently locked, the chemicals are contained in the bath 41 so that the substrate ( After positioning 40, the chemical supply part 43 is used to flow the chemical into the bath 41 so that the substrate 40 located inside the bath 41 is sufficiently wound.

The chemical supply part 43 mentioned above is a member that flows the chemical into the bath 41 in which the substrate 40 is located, and as shown in reference numeral 53, the substrate 40 is disposed below the back surface of the substrate 40 located in the bath 41. 40) It is installed to flow the chemical to the back side. Accordingly, the chemical supply unit 43 includes a supply line 43a installed under the rear surface of the substrate 40 and the pump 43b connected to the supply line 43a. In particular, in the case of the supply line 43a, a chemical may flow from the bottom of the substrate 40 positioned inside the bath 41 to the back of the substrate 40 through the bottom of the bath 41. In addition, the supply line 43a may be installed such that a part of the chemical flows around the substrate 40 from the outside of the substrate 40. In this case, the supply line 43a is disposed outside the bath 41 so that a part of the chemical flows from the outside of the substrate 40 to the center of the substrate 40. As such, the installation of the supply line 43a to flow the chemical from the bottom of the outer surface of the substrate 40 to the back of the center of the substrate 40 is to increase the process efficiency through a smooth flow of the chemical. In addition, the pump 43b is installed to smoothly flow the chemical by the pumping operation, and although not shown, a valve capable of opening and closing the supply line 43a may be installed. In the second embodiment, the installation structure of the chemical supply unit 43 is described as mentioned, but the present invention is not limited thereto. That is, as mentioned above, it can be understood that the chemical supply part 43 is installed on the basis of high process efficiency. In addition, the chemical supply part 43 is not limited to the number.

The chemical discharge part 45 is a member that flows chemicals flowing into the bath 41 to the outside of the bath 41, and after placing the substrate 40 inside the bath 41, the substrate 40 at the time of processing. When a portion of the bent is bent is installed to flow the chemical flows to a portion of the substrate 40 to the outside. Accordingly, the chemical discharge part 45 is preferably installed concentrated at a portion close to the portion where the substrate 40 is bent, and in particular, the chemical flows out of the bath 41 below the rear surface of the portion of the substrate 40. It is more preferable to install. In addition, the chemical discharge part 45 includes a discharge line 45a installed outside the bath 41 under a portion of the substrate 40 and a pump 45b connected to the discharge line 45a. In particular, the discharge line 45a is preferably installed to flow the chemical out of the bath 41 through the bottom of the bath 41 under a portion of the substrate 40. In addition, the pump 45b is installed to smoothly flow the chemical to the outside of the bath 41 under a part of the substrate 40 through a pumping operation. Although not shown, the discharge line 45a may be further provided with a valve capable of opening and closing. In addition, the chemical discharge part 45 is not limited to the number of installation when the substrate 40 is installed in a portion where the substrate 40 is bent.

Thus, also in the case of the manufacturing apparatus 400 of the integrated circuit element of Example 2 of this invention, the bath 41, the chemical supply part 43, and the chemical discharge part 45 similarly to the manufacturing apparatus 100 of Example 1 It is provided.

Therefore, in the manufacturing using the manufacturing apparatus 400 having the bath 41, the chemical supply 43, and the chemical discharge 45 mentioned above, the substrate 40 is first placed inside the bath 41. In this case, as mentioned above, the chemical is not contained in the bath 41, or the chemical is accommodated in such a way that the substrate 40 located in the bath 41 is not sufficiently locked. In addition, the substrate 40 is transported in parallel with the bottom of the bath 41. And the processing of the board | substrate 40 is performed by flowing a chemical so that the board | substrate 40 located in the bath 41 may be wound up sufficiently. In particular, the chemical by the chemical supply 43 flows from the bottom of the back of the substrate 40 to the back of the substrate 40. In addition, a part of the chemical by the chemical supply part 43 flows to the center of the substrate 40 outside the substrate 40. That is, when the chemical supply unit 43 mentioned above is used, the chemical flows from the bottom of the back of the substrate 40 to the center of the back of the substrate 40. Accordingly, due to the flow of the chemical, buoyancy, drag, compounding force, and the like are applied in the same direction as 55, and as a result, a part of the substrate 40 is bent. In particular, as mentioned above, when the chemical flows from the outside of the bottom of the back of the substrate 40 to the center of the back of the substrate 40, buoyancy, drag force, a compounding force thereof, etc. are applied to the center portion of the substrate 40. 40) The center part is bent. Therefore, the chemical that flows to a portion of the substrate 40 using the chemical discharge part 45 flows out of the bath 41. At this time, as mentioned above, when the center portion of the substrate 40 is bent, the chemical discharge part 45 flows the chemical flowing to the center portion of the substrate to the outside of the bath 41. As such, when the chemical flows to the outside of the bath 41 by using the chemical discharge part 45, the suction force is applied to a part of the substrate 41 in the same direction as the reference numeral 57. Is generated. That is, due to the flow of the chemical using the chemical supply unit 43, the suction force is generated in the opposite direction to the buoyancy force, drag force, compounding force, etc. applied to the substrate 40. Accordingly, the substrate 40 may be caused by the flow of the chemical for the processing of the substrate 40 by canceling the drag force, buoyancy force, synthetic force, etc. acting in the same direction as the reference numeral 25 with the suction force generated in the same direction as the reference numeral 57. It is possible to sufficiently reduce the bending of a part of).

As described above, in the process using the integrated circuit device manufacturing apparatus 200 according to the second embodiment of the present invention, after placing the substrate 40 inside the bath 41, the chemicals are flowed into the bath 41 to be integrated. When processing the substrate 40 according to the manufacture of the circuit device, if a portion of the substrate 40 is bent, the chemicals flowing to a portion of the inside of the bath 41 flow out of the bath 41. It can reduce the bending of a part of).

In the second embodiment of the present invention, the portion where the substrate 40 is bent is limited to the center portion, and correspondingly, the chemical discharge portion 45 is also provided on the rear surface of the center portion of the substrate 40, and the center portion of the substrate 40 is formed. It is limited to flowing the chemical flows to the outside of the bath 41, but it can be understood that the chemical discharge unit 45 is installed on the basis of the portion where the substrate 40 is intensively bent. In addition, although the chemical discharge part 45 is provided so that chemicals may flow out of the bath 41 under the back surface of the board | substrate 40, the buoyancy force, drag force, the compounding force, etc. which generate the warpage of the board | substrate 40, etc. are provided. It can be understood that the suction force generated by the chemical discharge part 45 acts in the opposite direction.

In addition, the chemicals lost by flowing out of the bath 41 through the chemical discharge part 45 may be continuously replenished through the chemical supply part 43.

In addition, the aforementioned roller 63 is a member for transferring the substrate 40 into the bath 41, and is installed inside the bath 41. In addition, the roller 63 includes an upper roller 63a and a lower roller 63b, the upper roller 63a is installed in contact with the outer periphery of the upper surface of the substrate 40, and the lower roller 63b is disposed on the substrate 40. ) It is installed in contact with the back side. At this time, the upper roller (63a) is installed in contact with only the outer portion of the upper surface of the substrate 40 in order to smoothly flow the chemical to the upper surface of the substrate 40, and the lower roller (63b) is the substrate 40, which is transferred below In order to prevent sagging, it is installed in a structure crossing the substrate 40. As such, when the upper roller 63a is installed so as to contact only the outer portion of the upper surface of the substrate 40, buoyancy, drag force, compounding force, etc. due to the flow of the chemical may be concentrated on the center portion of the substrate 40. In addition, even when the chemical supply unit 43 is installed to flow the chemical from the bottom of the bottom of the back of the substrate 40 to the center of the back of the substrate 40, buoyancy, drag, drag force, etc. This can be concentrated. Therefore, as mentioned, when the chemical supply part 43 and the upper roller 63a are installed, the chemical discharge part 45 causes the chemicals flowing to the center portion of the substrate 40 to flow intensively out of the bath 41. It is preferable to install.

And when the roller (63a) for transferring the substrate 40 into the bath 41, such as the manufacturing apparatus 400 of the second embodiment should be provided with a transfer path of the substrate 40 on the side of the bath 40 . That is, the roller 63 is installed to be provided with a transfer path of the substrate 40 on the side of the bath 41 of the same height as the path that the substrate 40 is transferred.

Thus, in the second embodiment, as shown in Fig. 5, the transfer windows 65a and 65b are provided on the side of the bath 41 so as to be openable and closeable. Here, the transfer window of 65a is a member providing a path for transferring the substrate 40 into the bath 41, and the transfer window of 65b is a path for transferring the substrate 40 to the outside of the bath 41. It can be understood as a member to provide. In addition, the transfer windows 65a and 65b may be provided as members that are opened or closed by a shutter method or the like. Accordingly, the substrate 40 is transferred into the bath 41 by the roller 63 through the transfer windows 65a and 65b provided on the side of the bath 41 or the substrate 40 is moved out of the bath 41. Can be transferred. When the transfer windows 65a and 65b are installed, chemicals inside the bath 41 may flow out of the bath 41 through the transfer windows 65a and 65b when the transfer windows 65a and 65b are opened. have. Accordingly, a member for circulating the chemical flowing out of the bath 41 through the transfer windows 65a and 65b may be further provided.

Also, in the case of the apparatus 400 for manufacturing the integrated circuit device of FIG. 2, similarly to the apparatus 100 for manufacturing the integrated circuit device of FIG. 1, the chemical circulation unit 47, the sensor 49, the controller 51, and the like may be used. It may further include. In addition, since the chemical circulation part 47, the sensor 49, and the control part 51 in Example 2 have the same structure as the chemical circulation part 17, the sensor 19, and the control part 21 in Example 1, The detailed description thereof will be omitted.

Hereinafter, the bath 41, the chemical supply 43, the chemical discharge 45, the roller 63, the transfer windows 65a and 65b, the chemical circulation 47, the sensor 49, and the controller 51 mentioned below. A method of using the apparatus 400 for manufacturing an integrated circuit device having a structure) will be described.

6 is a flowchart illustrating an example of using the apparatus for manufacturing the integrated circuit device of FIG. 4.

Referring to FIG. 6, a substrate 40 for fabricating an integrated circuit device is transferred into the bath 41. The transfer of the substrate 40 mentioned above first opens the transfer window 65a provided on one side of the bath 41. (S601) At this time, if the chemical is sufficiently contained in the bath 41, one side The chemical may flow out of the bath 41 through the transfer window 65a. In addition, the transfer window 65b on the opposite side is also opened to transfer the completed substrate 40 to the outside of the bath 41 for subsequent processing. In this case as well, as mentioned, the chemical may flow out of the bath 41 through the transfer window 65b. In addition, the chemical flowing out of the bath 41 through the transfer windows 65a and 65b may flow back into the bath 42 using a circulation member (not shown). Subsequently, the substrate is transferred into the bath 41 through the transfer window 65a on one side. At this time, the substrate 40 is transferred by the roller 63 installed in the bath 41 (S603).

In this way, the substrate 40 is transferred into the bath 41 by the opening of the transfer windows 65a and 65b and the transfer using the roller 63. At this time, the chemical is not accommodated in the bath 41, or the chemical is accommodated to such an extent that the substrate 40 located in the bath 41 is not sufficiently locked. This is because, as mentioned, the chemical flows out of the bath 41 by opening the transfer windows 65a and 65b. Accordingly, the chemical is supplied to the inside of the bath 41 in which the substrate 40 is located by using the chemical supply unit 43. (S605) At this time, the flow of the chemical is made so that the substrate 40 is sufficiently wound. In addition, since the substrate 40 is transferred into the bath 41 using the transfer windows 64a and 65b and the roller 63 as mentioned, the substrate 40 is transferred in parallel with the bottom of the bath 41. .

Subsequently, the processing of the substrate is performed by flowing the chemical into the bath. (S607) Here, the processing of the substrate may be accomplished by continuous transfer of the substrate, process processing using a member such as a brush, etc., in addition to the flow of the chemical. Can be.

Subsequently, the sensor 49 is used to sense whether there is a portion of the substrate 40 that is bent due to the flow of the chemical (S609 and S611). When the portion of the substrate 40 is bent and sensed, the sensor 49 is detected. ) Outputs a sensing signal to the control unit 51, and the control unit 51 receiving the sensing signal instructs the chemical discharge unit 45 to operate. Accordingly, the chemical flowing to the part of the substrate 40 is flowed to the outside of the bath 41 by using the chemical discharge part 45. (S613) As such, the chemical flows to the part of the substrate 40. When the discharged to the outside of the bath 41, the suction force is generated in a direction as shown by the reference numeral 57 in a portion of the substrate 40. Thus, a part of the substrate 40 due to the dipping of the substrate 40 by canceling the drag force, buoyancy force, their combined force, etc. acting in the same direction as the reference numeral 55 mentioned as the suction force generated in the same direction as the reference numeral 57 This warpage can be sufficiently reduced.

In particular, in the second embodiment, the upper edge of the upper surface of the substrate 40 is supported by the upper roller 63a among the rollers 63. In addition, the chemical supply part 43 has a configuration in which the chemical flows from the bottom of the rear surface of the substrate 40 to the center of the rear surface of the substrate 40. As a result, the central portion of the substrate 40 may be concentrated. As such, when the central portion of the substrate 40 is intensively bent, the situation in which the central portion of the substrate 40 is bent may be reduced by intensively flowing chemicals flowing to the center portion of the substrate 40 to the outside of the bath 41. .

Then, the chemical that flows out of the bath 41 is flowed back into the bath 41 by using the chemical circulation part 47. (S615) As described above, the chemical is flowed by using the chemical circulation part 47 in the bath 41. By reflowing into the inside), a certain amount of chemical is continuously maintained in the bath 41 so that the substrate 40 is sufficiently wound, and in particular, the consumption of the chemical can be significantly reduced.

In addition, in the case of the manufacturing method in which the chemical flows to the substrate 10 positioned inside the bath 41 as in the second embodiment of the present invention, it can be more actively applied to the flat panel display device among the integrated circuit devices.

As described above, even in the case of using the apparatus and the method of the second embodiment of the present invention, the situation in which the substrate 40 is bent by the chemical in the unit process using the chemical can be sufficiently reduced. Therefore, by reducing the defects caused by the warpage of the substrate 40, it is possible to improve the reliability in the unit process, as well as to carry out the stable process of the transfer of the substrate 40 in the subsequent process according to the manufacture of the integrated circuit device Productivity can be improved.

1 is a schematic configuration diagram showing an apparatus for manufacturing an integrated circuit device according to Embodiment 1 of the present invention.

FIG. 2 is a flowchart illustrating an example of using the apparatus for manufacturing the integrated circuit device of FIG. 1.

3 is a flowchart for explaining another example of using the apparatus for manufacturing the integrated circuit device of FIG. 1.

4 is a schematic configuration diagram showing an apparatus for manufacturing an integrated circuit device according to Embodiment 2 of the present invention.

FIG. 5 is a view for explaining a transfer window of the apparatus for manufacturing the integrated circuit device of FIG. 4.

6 is a flowchart illustrating an example of using the apparatus for manufacturing the integrated circuit device of FIG. 4.

Claims (36)

Flowing chemical into the bath; And When a portion of the substrate located inside the bath is bent due to the flow of the chemical, a portion of the substrate is bent to a portion of the substrate such that a force acts in a direction opposite to the force applied to the portion of the substrate. And discharging the flowed chemical out of the bath. Flowing the chemical into the bath to accommodate the chemical inside the bath; Dipping the substrate into a chemical contained within the bath such that the substrate for fabrication into an integrated circuit device is submerged; Processing the substrate using the chemical; And In the process of processing the substrate using the chemical, if a portion of the substrate is bent, the flow of the chemical contained in the portion of the substrate from the chemical contained in the bath flows to the outside of the bath; Method of preparation. The method of claim 2, wherein a portion of the substrate is bent by drag, buoyancy, or a combination thereof. The method of claim 2, wherein the substrate is dipped parallel to the bottom of the bath. The method of claim 2, wherein the chemical contained in the portion of the substrate flows under the portion of the substrate to the outside of the bath. 6. The method of claim 5, wherein the chemical contained in a portion of the substrate flows out of the bath through the bottom of the bottom of the substrate under the portion of the substrate. 3. The method of claim 2, further comprising flowing the chemical flowed out of the bath back into the bath. Transferring a substrate into the bath for manufacture into an integrated circuit device; Flowing chemical into the bath such that the substrate transferred into the bath is locked; Processing the substrate using chemicals in which the substrate is immersed in flow; And And processing a chemical flowed to a portion of the substrate out of the bath when a portion of the substrate is bent when the substrate is processed using the chemical. The method of claim 8, wherein the transferring of the substrate into the bath, And transferring the substrate into the bath parallel to the bottom of the bath. The method of claim 9, wherein the substrate is transferred into the bath parallel to the bottom of the bath through the side of the bath. The method of manufacturing an integrated circuit device according to claim 10, wherein the substrate is transferred using a roller provided inside the bath. The method of claim 11, wherein the roller comprises an upper roller in contact with an outer portion of the upper surface of the substrate and a lower roller in contact with the rear surface of the substrate. The method of claim 8, wherein flowing the chemical into the bath comprises: And the chemical flows from the back surface of the substrate to the back surface of the substrate. The method of claim 13, wherein a portion of the chemical flows from the outside of the substrate to the center of the substrate. The method of claim 8, wherein the portion of the substrate comprises a central portion of the substrate. The method of claim 8, wherein a portion of the substrate is bent by drag, buoyancy, or a combination thereof. The method of claim 8, wherein the flowing of the chemical flowing to a portion of the substrate out of the bath, And manufacturing the chemical out of the bath under a portion of the substrate. 18. The method of claim 17, wherein the chemical flows out of the bath through the bath bottom underneath a portion of the substrate. 10. The method of claim 8, further comprising flowing the chemical flowed out of the bath back into the bath. A bath containing the chemical therein; Chemical supply unit for flowing the chemical in the bath; And When a portion of the substrate is bent when the substrate is processed by dipping a substrate for fabricating an integrated circuit device into the chemical contained in the bath, the chemical contained in the portion of the substrate is stored among the chemicals contained in the bath. And a chemical discharge portion flowing out of the bath. 21. The apparatus of claim 20, wherein the chemical discharge part comprises a discharge line installed outside the bath under a portion of the substrate and a pump connected to the discharge line. 22. The apparatus of claim 21, wherein the discharge line is installed outside the bath through the bottom of the bath under a portion of the substrate. 21. The apparatus of claim 20, further comprising a chemical circulator for flowing the chemical flowing out of the bath back into the bath through the chemical discharge part. 21. The integrated circuit of claim 20, further comprising a sensor configured to detect the bending of a portion of the substrate and a control unit configured to receive a sensing signal of the sensor and to control the operation of the chemical discharge unit by the sensing signal. Device for manufacturing a circuit element. A bath in which a substrate for manufacturing an integrated circuit device is located; A chemical supply unit configured to flow a chemical into a bath in which the substrate is located; And And a chemical discharge part for flowing a chemical flowed to a portion of the substrate to the outside of the bath when a portion of the substrate is bent when the substrate is processed by using the chemical to flow into the bath. An apparatus for manufacturing an integrated circuit device. 27. The apparatus of claim 25, further comprising a roller installed inside the bath and transferring the substrate into the bath. The transfer window of claim 26, wherein when a roller is installed inside the bath, the transfer window is provided to be opened and closed on the side of the bath and provides a path for transferring the substrate to the roller installed inside the bath through the side of the bath. Apparatus for manufacturing an integrated circuit device further comprising. 28. The apparatus of claim 27, wherein the roller comprises an upper roller in contact with an outer portion of the upper surface of the substrate and a lower roller in contact with the rear surface of the substrate. 27. The apparatus of claim 25, wherein the chemical supply unit flows the chemical into the bath such that the substrate located inside the bath is locked. The apparatus of claim 25, wherein the chemical supply unit comprises a supply line installed under the substrate back side to the substrate back side and a pump connected to the supply line. 31. The apparatus of claim 30, wherein the supply line is provided below the substrate through the bath bottom to the substrate back surface. 32. The apparatus of claim 31, wherein the supply line is installed such that a portion of the chemical flows from the outside of the substrate to the center of the substrate. The apparatus of claim 25, wherein the chemical discharge part comprises a discharge line installed outside the bath under a portion of the substrate and a pump connected to the discharge line. 34. The apparatus of claim 33, wherein the discharge line is installed outside the bath through the bottom of the bath under a portion of the substrate. 26. The apparatus of claim 25, further comprising a chemical circulator for flowing back chemicals flowing out of the bath through the chemical outlets into the bath. The integrated circuit of claim 25, further comprising a sensor configured to detect a portion of the substrate that is bent, a controller configured to receive a sensing signal of the sensor and to control an operation of the chemical discharge unit based on the sensing signal. Device for manufacturing a circuit element.

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