JP2018174258A - Substrate liquid treatment device, substrate liquid treatment method and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate liquid treatment device suitable for improving uniformity of substrate treatment by optimization of gas supply conditions to treatment liquids.SOLUTION: A substrate liquid treatment device A1 comprises: a treatment tank 41 for storing treatment liquids 43; a substrate lifting mechanism 36 for immersing a plurality of standing substrates 8 in the treatment liquids 43 in the treatment tank 41 in a state where the substrates 8 are arrayed along a thickness direction; a plurality of gas nozzles 70 for discharging a gas at a lower part of the treatment tank 41; a gas supply part 89 for supplying a gas to the plurality of gas nozzles 70; and a control part 7 which is constituted to change supply quantity of the gas from the gas supply part 89 to the gas nozzles 70 depending on at least any of a gap between the substrates 8, elapsed time after the start of immersion of the substrates 8 and arranged positions of the gas nozzles 70.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium.

  In Patent Document 1, an overflow tank, a pump for circulating the etchant in the tank, a heater for heating the etchant in the tank to a constant temperature, a temperature controller for controlling the temperature, and a bottom part in the tank There is disclosed a wet etching processing apparatus including a frame for fixing a wafer cassette on a provided dispersion plate and a bubbler for bubbling an etching solution in a tank with nitrogen.

Japanese Patent Application Laid-Open No. 07-58078

  It is desired to further improve the uniformity of substrate processing between a plurality of substrates and in the plane of a single substrate. The supply state of the above-described bubbling gas affects the uniformity of substrate processing because it affects the rising speed of the processing liquid in each part in the processing tank.

  Accordingly, an object of the present disclosure is to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in improving the uniformity of substrate processing by optimizing the gas supply state to the processing liquid.

  A substrate liquid processing apparatus according to one aspect of the present disclosure includes a processing tank that stores a processing liquid and a substrate, and a transport that immerses the plurality of upright substrates in a processing liquid in the processing tank in a state of being arranged along the thickness direction. Part, a plurality of gas nozzles that discharge gas at the lower part in the processing tank, a gas supply part that supplies gas to the plurality of gas nozzles, the interval between the substrates, the elapsed time after the substrate immersion is started, and And a control unit configured to change a gas supply amount from the gas supply unit to the gas nozzle in accordance with at least one of the arrangement positions of the gas nozzles.

  According to the present disclosure, it is possible to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a storage medium that are effective in improving the uniformity of substrate processing by optimizing the gas supply state to the processing liquid.

It is a top view which shows a substrate liquid processing system typically. It is a schematic diagram of an etching processing apparatus. It is a top view of a processing tank. It is an enlarged view of a gas nozzle. This is a decomposition of the gas nozzle. It is a block diagram which shows the functional structure of a control part. It is a flowchart of a substrate processing procedure. It is a flowchart of the filling procedure of a process liquid. It is a flowchart of a nozzle cleaning procedure. It is a flowchart which shows an immersion process procedure. It is a flowchart which shows the control procedure of a gas supply amount. It is a flowchart of the discharge procedure of a process liquid.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

  As shown in FIG. 1, the substrate liquid processing system 1 </ b> A includes a carrier carry-in / out unit 2, a lot forming unit 3, a lot placement unit 4, a lot transport unit 5, a lot processing unit 6, and a control unit 7. Have

  Among these, the carrier loading / unloading unit 2 loads and unloads the carrier 9 in which a plurality of (for example, 25) substrates (silicon wafers) 8 are stored in a horizontal posture.

  The carrier loading / unloading unit 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 that transports the carriers 9, carrier stocks 12 and 13 that temporarily store the carriers 9, A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 is temporarily stored before the substrate 8 as a product is processed by the lot processing unit 6. Further, the carrier stock 13 is temporarily stored after the substrate 8 to be a product is processed by the lot processing unit 6.

  Then, the carrier carry-in / out unit 2 conveys the carrier 9 carried into the carrier stage 10 from the outside to the carrier stock 12 and the carrier mounting table 14 using the carrier carrying mechanism 11. The carrier loading / unloading unit 2 transports the carrier 9 placed on the carrier placing table 14 to the carrier stock 13 and the carrier stage 10 using the carrier carrying mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out to the outside.

  The lot forming unit 3 forms a lot composed of a plurality of (for example, 50) substrates 8 that are processed simultaneously by combining the substrates 8 accommodated in one or a plurality of carriers 9. When forming the lot, the lot may be formed so that the surfaces on which the pattern is formed on the surface of the substrate 8 are opposed to each other, and the surface on which the pattern is formed on the surface of the substrate 8 Lots may be formed so that they all face one side.

  The lot forming unit 3 is provided with a substrate transfer mechanism 15 for transferring a plurality of substrates 8. The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and from the vertical posture to the horizontal posture during the transportation of the substrate 8.

  The lot forming unit 3 transfers the substrate 8 from the carrier 9 mounted on the carrier mounting table 14 to the lot mounting unit 4 by using the substrate transfer mechanism 15, and the substrate 8 for forming the lot is transferred to the lot mounting unit. 4 is placed. Further, the lot forming unit 3 transports the lot placed on the lot placing unit 4 to the carrier 9 placed on the carrier placing table 14 by the substrate carrying mechanism 15. The substrate transport mechanism 15 serves as a substrate support unit for supporting a plurality of substrates 8, a pre-process substrate support unit that supports the substrate 8 before processing (before being transported by the lot transport unit 5), and a process There are two types of post-process substrate support units that support the subsequent substrate 8 (after being transported by the lot transport unit 5). This prevents particles or the like adhering to the substrate 8 before processing from being transferred to the substrate 8 after processing.

  The lot placement unit 4 temporarily places (waits) the lot transported between the lot forming unit 3 and the lot processing unit 6 by the lot transportation unit 5 on the lot placement table 16.

  The lot placement unit 4 includes a loading-side lot placement table 17 for placing a lot before processing (before being transported by the lot transport unit 5), and after processing (after transported by the lot transport unit 5). An unloading lot mounting table 18 on which the lot is mounted is provided. On the carry-in lot mounting table 17 and the carry-out lot mounting table 18, a plurality of substrates 8 for one lot are placed side by side in a vertical posture.

  In the lot placing unit 4, the lot formed by the lot forming unit 3 is placed on the carry-in side lot placing table 17, and the lot is carried into the lot processing unit 6 via the lot transport unit 5. Further, in the lot placement unit 4, the lot carried out from the lot processing unit 6 via the lot transport unit 5 is placed on the carry-out lot placement table 18, and the lot is transported to the lot forming unit 3.

  The lot transport unit 5 transports lots between the lot placing unit 4 and the lot processing unit 6 or between the lot processing units 6.

  The lot transport unit 5 is provided with a lot transport mechanism 19 for transporting a lot. The lot transport mechanism 19 includes a rail 20 disposed along the lot placement unit 4 and the lot processing unit 6, and a moving body 21 that moves along the rail 20 while holding a plurality of substrates 8. The moving body 21 is provided with a substrate holding body 22 that holds a plurality of substrates 8 aligned in the front-rear direction in a vertical posture so as to freely advance and retract.

  Then, the lot transport unit 5 receives the lot placed on the carry-in side lot placing table 17 by the substrate holder 22 of the lot transport mechanism 19 and delivers the lot to the lot processing unit 6. In addition, the lot transfer unit 5 receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the unload-side lot mounting table 18. Further, the lot transport unit 5 transports a lot inside the lot processing unit 6 using the lot transport mechanism 19.

  The lot processing unit 6 performs processing such as etching, cleaning, and drying by using a plurality of substrates 8 arranged in the front and back in a vertical posture as one lot.

  The lot processing unit 6 includes a drying processing device 23 for drying the substrate 8, a substrate holder cleaning processing device 24 for cleaning the substrate holder 22, and a cleaning processing device 25 for cleaning the substrate 8. And two etching processing apparatuses (substrate liquid processing apparatuses) 1 according to the present invention for performing the etching process on the substrate 8 are provided side by side.

  The drying processing apparatus 23 includes a processing tank 27 and a substrate lifting mechanism 28 provided in the processing tank 27 so as to be movable up and down. The treatment tank 27 is supplied with a treatment gas for drying (such as IPA (isopropyl alcohol)). The substrate lifting mechanism 28 holds a plurality of substrates 8 for one lot side by side in a vertical posture. The drying processing device 23 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 28 and lifts the lot by the substrate lifting mechanism 28, thereby using the processing gas for drying supplied to the processing tank 27. The substrate 8 is dried. Further, the drying processing device 23 delivers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transport mechanism 19.

  The substrate holder cleaning processing apparatus 24 has a processing tank 29, and can supply a processing liquid and a drying gas for cleaning to the processing tank 29, and the substrate holder 22 of the lot transport mechanism 19 is used for cleaning. After the treatment liquid is supplied, the substrate holder 22 is cleaned by supplying a dry gas.

  The cleaning processing apparatus 25 includes a cleaning processing tank 30 and a rinsing processing tank 31, and substrate lifting mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be movable up and down. A cleaning processing solution (SC-1 or the like) is stored in the cleaning processing tank 30. The rinsing treatment tank 31 stores a rinsing treatment liquid (pure water or the like).

  The etching processing apparatus 1 includes a processing tank 34 for etching and a processing tank 35 for rinsing, and substrate processing mechanisms 36 and 37 are provided in the processing tanks 34 and 35 so as to be movable up and down. The etching treatment tank 34 stores an etching treatment liquid (phosphoric acid aqueous solution). The rinsing treatment tank 35 stores a rinsing treatment liquid (pure water or the like).

  The cleaning processing apparatus 25 and the etching processing apparatus 1 have the same configuration. The etching processing apparatus (substrate liquid processing apparatus) 1 will be described. The substrate lifting mechanism 36 holds a plurality of substrates 8 for one lot arranged side by side in a vertical posture. In the etching processing apparatus 1, the lot is received by the substrate lifting mechanism 36 from the substrate holder 22 of the lot transport mechanism 19, and the lot is moved up and down by the substrate lifting mechanism 36, so that the lot is immersed in the etching processing liquid in the processing tank 34. Then, the substrate 8 is etched. Thereafter, the etching processing apparatus 1 delivers the lot from the substrate lifting mechanism 36 to the substrate holder 22 of the lot transport mechanism 19. Further, the lot is received by the substrate lifting mechanism 37 from the substrate holder 22 of the lot transport mechanism 19, and the lot is dipped in the rinsing process liquid in the processing tank 35 by moving the lot up and down by the substrate lifting mechanism 37. Perform rinsing. Thereafter, the lot is transferred from the substrate lifting mechanism 37 to the substrate holder 22 of the lot transport mechanism 19.

  The control unit 7 controls the operation of each unit of the substrate liquid processing system 1A (the carrier carry-in / out unit 2, the lot forming unit 3, the lot placing unit 4, the lot transport unit 5, the lot processing unit 6, and the etching processing apparatus 1). .

  The control unit 7 includes a computer, for example, and includes a computer-readable storage medium 38. The storage medium 38 stores a program for controlling various processes executed in the substrate liquid processing apparatus 1. The control unit 7 controls the operation of the substrate liquid processing apparatus 1 by reading and executing a program stored in the storage medium 38. The program may be stored in the computer-readable storage medium 38 and may be installed in the storage medium 38 of the control unit 7 from another storage medium. Examples of the computer-readable storage medium 38 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[Substrate liquid processing equipment]
Next, the substrate liquid processing apparatus A1 included in the substrate liquid processing system 1A will be described in detail. As shown in FIGS. 2 and 3, the substrate liquid processing apparatus A <b> 1 includes an etching processing apparatus 1, a substrate lifting / lowering mechanism 36 (conveying unit), and a control unit 7.

(Etching processing equipment)
The etching processing apparatus 1 includes a liquid processing unit 40, a processing liquid supply unit 44, a processing liquid discharge unit 67, a plurality of (for example, six) gas nozzles 70, a gas supply unit 89, a gas heating unit 94, and a gas. The removal part 95 and the liquid level sensor 80 are provided.

  The liquid processing unit 40 is a part that performs liquid processing (etching processing) on the substrate 8, and includes a processing tank 41, an outer tank 42, and a processing liquid 43.

  The processing tank 41 contains the processing liquid 43 and the substrate 8. Specific examples of the treatment liquid 43 include an aqueous phosphoric acid solution. Since the upper part of the processing tank 41 is open, the substrate 8 can be immersed in the processing liquid 43 in the processing tank 41 from above. As will be described later, the circular substrate 8 is disposed in an upright state in the processing tank 41. Hereinafter, a direction perpendicular to the height direction and along the substrate 8 in the processing tank 41 is referred to as a “width direction”, and a direction orthogonal to the height direction and the width direction (that is, the thickness direction of the substrate 8 in the processing tank 41). ) Is called “depth direction”.

  Of the bottom surface of the treatment tank 41, both side portions in the width direction become higher toward the outside. Thereby, the dead space between the corner in the processing tank 41 and the outer periphery of the substrate 8 is reduced, and the retention of the processing liquid 43 is difficult to occur.

  The outer tank 42 is provided so as to surround the processing tank 41, and stores the processing liquid overflowing from the processing tank 41.

  The processing liquid supply unit 44 supplies the processing liquid 43 into the processing tank 41. For example, the processing liquid supply unit 44 includes a processing liquid supply source 45, a flow rate regulator 46, a pure water supply source 47, a flow rate regulator 48, a processing liquid circulation unit 49, and a concentration measurement unit 55.

  The processing liquid supply source 45 supplies the processing liquid 43 to the outer tank 42. The flow controller 46 is provided in the flow path of the processing liquid from the processing liquid supply source 45 to the outer tub 42, and performs opening / closing and opening adjustment of the flow path.

  The pure water supply source 47 supplies pure water to the outer tub 42. This pure water supplements moisture evaporated by heating the treatment liquid 43. The flow rate regulator 48 is provided in a pure water flow path from the pure water supply source 47 to the outer tub 42, and performs opening / closing and opening adjustment of the flow path.

  The processing liquid circulation unit 49 sends the processing liquid 43 in the outer tank 42 to the lower part in the processing tank 41. For example, the processing liquid circulation unit 49 includes a plurality of (for example, three) processing liquid nozzles 50, a circulation channel 51, a supply pump 52, a filter 53, and a heater 54.

  The processing liquid nozzle 50 is provided in the lower part in the outer tank 42, and discharges the processing liquid 43 into the processing tank 41. The plurality of treatment liquid nozzles 50 are arranged in the width direction at the same height, and extend in the depth direction.

  The circulation channel 51 guides the processing liquid from the outer tank 42 to the plurality of processing liquid nozzles 50. One end of the circulation channel 51 is connected to the bottom of the outer tub 42. The other end of the circulation channel 51 is branched into a plurality of lines and connected to the plurality of treatment liquid nozzles 50, respectively.

  The supply pump 52, the filter 53, and the heater 54 are provided in the circulation channel 51, and are arranged in order from the upstream side (outer tank 42 side) to the downstream side (processing liquid nozzle 50 side). The supply pump 52 pumps the processing liquid 43 from the upstream side to the downstream side. The filter 53 removes particles mixed in the processing liquid 43. The heater 54 heats the processing liquid 43 to a set temperature. The set temperature is set to a value near the boiling point of the treatment liquid 43, for example.

  The concentration measuring unit 55 measures the concentration of the processing liquid 43. For example, the concentration measurement unit 55 includes a measurement channel 56, on-off valves 57 and 59, a concentration sensor 58, a cleaning fluid supply unit 60, and a cleaning fluid discharge unit 64.

  The measurement flow path 56 branches from the circulation flow path 51 between the heater 54 and the treatment liquid nozzle 50, and a part of the treatment liquid 43 is extracted and refluxed to the outer tank 42. The on-off valves 57 and 59 are arranged in order from the upstream side (circulation flow channel 51 side) to the downstream side (outer tank 42 side) in the measurement flow channel 56, and open and close the measurement flow channel 56, respectively. The concentration sensor 58 is provided between the on-off valves 57 and 59 in the measurement channel 56 and measures the concentration (for example, phosphoric acid concentration) of the processing liquid 43 flowing through the measurement channel 56.

  The cleaning fluid supply unit 60 supplies a cleaning fluid (for example, pure water) to the concentration sensor 58. For example, the cleaning fluid supply unit 60 includes a cleaning fluid supply source 61, a supply flow path 62, and an on-off valve 63. The cleaning fluid supply source 61 is a cleaning fluid supply source. The supply channel 62 supplies a cleaning fluid from the cleaning fluid supply source 61 to the concentration sensor 58. One end of the supply channel 62 is connected to the cleaning fluid supply source 61, and the other end of the supply channel 62 is connected between the on-off valve 57 and the concentration sensor 58. The on-off valve 63 opens and closes the supply channel 62.

  The cleaning fluid discharge unit 64 discharges the cleaning fluid. For example, the cleaning fluid discharge unit 64 includes a discharge flow path 65 and an opening / closing valve 66. The discharge flow path 65 leads the cleaning fluid that has passed through the concentration sensor 58. One end of the discharge flow path 65 is connected between the concentration sensor 58 and the on-off valve 59, and the other end of the discharge flow path 65 is connected to a drain pipe (not shown) of the substrate liquid processing system 1A. Yes. The on-off valve 66 opens and closes the discharge channel 65.

  The processing liquid discharge unit 67 discharges the processing liquid 43 from the processing tank 41. For example, the treatment liquid discharge unit 67 includes a drain flow path 68 and an opening / closing valve 69. The drainage flow path 68 guides the processing liquid in the processing tank 41. One end of the drainage flow path 68 is connected to the bottom of the processing tank 41, and the other end of the drainage flow path 68 is connected to a drainage pipe (not shown) of the substrate liquid processing system 1A. The on-off valve 69 opens and closes the drainage flow path 68.

  The plurality of gas nozzles 70 discharge an inert gas (for example, N 2 gas) at the lower part in the processing tank 41. The plurality of gas nozzles 70 are arranged in the width direction below the processing liquid nozzle 50 and extend in the depth direction. The height of each gas nozzle 70 becomes higher as the arrangement position is further away from the center in the width direction.

  The plurality of gas nozzles 70 may be arranged along an arc concentric with the substrate 8. Arrangement along the arc includes not only the case where each gas nozzle 70 is positioned on the arc, but also the case where some of the gas nozzles 70 are displaced from the arc within a predetermined range. The predetermined range can be arbitrarily set as long as the uniformity of the distance from each gas nozzle 70 to the center of the substrate 8 is higher than when a plurality of gas nozzles 70 are located at the same height.

  For example, the plurality of gas nozzles 70 includes a pair of gas nozzles 70A positioned on the innermost side in the width direction, a pair of gas nozzles 70B positioned on the outer side of the pair of gas nozzles 70A, and a pair positioned on the outer side of the pair of gas nozzles 70B. Gas nozzle 70C. The gas nozzles 70B and 70B are located above the gas nozzles 70A and 70A, and the gas nozzles 70C and 70C are located above the gas nozzles 70B and 70B. The gas nozzles 70 </ b> A, 70 </ b> A, 70 </ b> B, 70 </ b> B, 70 </ b> C, 70 </ b> C are arranged along an arc concentric with the substrate 8.

  The number and arrangement of the gas nozzles 70 can be changed as appropriate. The plurality of gas nozzles 70 may be arranged at the same height.

  As shown in FIG. 4, the gas nozzle 70 is formed between a tubular (for example, circular tubular) main body 71 disposed so as to extend in the depth direction along the bottom surface of the processing tank 41, and the inner surface 73 and the outer surface 74 of the main body 71. And at least one discharge hole 77 formed so as to penetrate therethrough. For example, the gas nozzle 70 has a plurality of discharge holes 77 arranged along the depth direction. The main body 71 is made of, for example, quartz. The main body 71 may be made of a material that does not contain silicon, instead of quartz. Specific examples of the material not containing silicon include resin materials such as polyetheretherketone (PEEK) and polytetrafluoroethylene (PTFE).

  Each discharge hole 77 is provided in the lower part of the main body 71. The discharge hole 77 may be provided at a position shifted from the vertically lower side of the tube center 72 of the main body 71. In this case, the position of the discharge hole 77 may be set so that the vertical virtual plane 75 including the tube center 72 of the main body 71 does not pass through the discharge hole 77. The center of the discharge hole 77 may be located within a range 76 of ± 10 ° vertically downward around the tube center 72 of the main body 71.

  There is no limitation on the direction in which the discharge hole 77 is displaced from the vertically lower side of the tube center 72. For example, the discharge hole 77 is shifted to the right side in the figure, but may be shifted to the left side in the figure. Further, the discharge holes 77 shifted to the right side in the figure and the discharge holes 77 shifted to the left side in the figure may be arranged in a staggered pattern along the depth direction.

  The discharge hole 77 is formed so that the opening area decreases from the inner surface 73 side of the main body 71 toward the outer surface 74 side. As illustrated in FIG. 5, the gas nozzle 70 having such a discharge hole 77 is formed by processing the discharge hole 77 from the inner surface side with respect to one of the two parts 78 and 79 on the semi-pipe, and then performing the component 78. , 79 can be integrated by welding or welding. Forming the discharge hole 77 in this manner is effective in preventing the clogging of the gas nozzle 70 (clogging of the discharge hole 77) due to the treatment liquid component adhering to the inner surface of the discharge hole 77.

  In addition, the discharge hole 77 may be formed so that the opening area increases from the inner surface 73 side of the main body 71 toward the outer surface 74 side. Forming the discharge holes 77 in this manner is effective for improving the uniformity of substrate processing between the plurality of substrates 8 (uniformity in a state where the components of the processing liquid are not fixed to the inner surfaces of the discharge holes 77).

  Returning to FIGS. 2 and 3, the gas supply unit 89 supplies the inert gas to the gas nozzle 70. For example, the gas supply unit 89 includes a gas supply source 90, a supply flow path 91, an on-off valve 92, and a flow rate regulator 93.

  The gas supply source 90 is an inert gas supply source. The supply channel 91 guides an inert gas from the gas supply source 90 to the gas nozzle 70. The on-off valve 92 opens and closes the supply channel 91. The flow rate regulator 93 adjusts the flow rate of the inert gas by adjusting the opening degree of the supply passage 91 between the on-off valve 92 and the gas supply source 90.

  The supply channel 91, the on-off valve 92, and the flow rate regulator 93 may be provided for each arrangement height of the gas nozzle 70. For example, the gas supply source 90 includes supply passages 91A, 91B, 91C, on-off valves 92A, 92B, 92C, and flow rate regulators 93A, 93B, 93C. The supply channel 91A guides an inert gas from the gas supply source 90 to one end of the gas nozzles 70A and 70A. The supply channel 91B guides the inert gas from the gas supply source 90 to one end of the gas nozzles 70B and 70B. The supply channel 91C guides the inert gas from the gas supply source 90 to one end of the gas nozzles 70C and 70C. The on-off valves 92A, 92B, and 92C open and close the supply passages 91A, 91B, and 91C, respectively. The flow rate controllers 93A, 93B, and 93C adjust the opening degrees of the supply flow paths 91A, 91B, and 91C, respectively.

  The gas heating unit 94 heats the inert gas supplied from the gas supply source 90 to the gas nozzle 70 to a set temperature. The set temperature is set to a value near the boiling point of the treatment liquid 43, for example. For example, the gas heating unit 94 is provided in the supply channel 91. In the figure, the gas heating unit 94 is provided at a portion where the supply flow paths 91A, 91B, and 91C merge on the gas supply source 90 side, but is not limited thereto. The gas heating unit 94 may be provided for each of the supply channels 91A, 91B, and 91C.

  The gas vent 95 reduces the internal pressure of the main body 71 of the gas nozzle 70. For example, the gas vent 95 includes a pressure reducing channel 96 and a pressure reducing valve 97. The decompression flow path 96 branches from the supply flow path 91 between the on-off valve 92 and the gas nozzle 70, and guides the gas in the supply flow path 91. The pressure reducing valve 97 opens and closes the pressure reducing channel 96.

  In addition, the gas vent part 95 may further include a pump for forced exhaust. The pressure reducing channel 96 and the pressure reducing valve 97 may be provided for each arrangement height of the gas nozzle 70. For example, the gas vent 95 includes pressure reducing channels 96A, 96B, 96C and pressure reducing valves 97A, 97B, 97C. The decompression flow path 96A branches from the supply flow path 91A between the on-off valve 92A and the gas nozzle 70A, and leads the gas in the supply flow path 91A. The decompression flow path 96B branches from the supply flow path 91B between the on-off valve 92B and the gas nozzle 70B, and guides the gas in the supply flow path 91B. The decompression channel 96C branches from the supply channel 91C between the on-off valve 92C and the gas nozzle 70C, and leads the gas in the supply channel 91C. The pressure reducing valves 97A, 97B, and 97C open and close the pressure reducing channels 96A, 96B, and 96C, respectively.

  The liquid level sensor 80 acquires information on the amount of gas contained in the processing liquid 43 (hereinafter referred to as “gas content of the processing liquid 43”). For example, the liquid level sensor 80 is a bubble type liquid level meter, and includes a bubble tube 81, a pressurized gas supply source 83, a gas line 84, a purge set 82, a detection line 85, a first detector 86A, And a second detector 86B.

  The bubble tube 81 is inserted into the processing liquid in the processing tank 41, and its end is located near the bottom of the processing tank 41. The pressurized gas supply source 83 is a supply source of an inert gas for liquid level measurement (hereinafter referred to as “measurement gas”). The gas line 84 guides the measurement gas from the pressurized gas supply source 83 to the bubble tube 81. The measuring gas guided to the bubble tube 81 is released from the end of the bubble tube 81 into the processing liquid in the processing tank 41.

  The purge set 82 adjusts the internal pressure of the gas line 84 so that the amount of measurement gas released from the bubble tube 81 is constant. Note that “constant” means substantially constant and means a state within a permissible range with a predetermined value as a reference.

  The detection line 85 transmits the internal pressure of the gas line 84 between the bubble tube 81 and the purge set 82 to the first detector 86A and the second detector 86B. One end portion of the detection line 85 is connected to the gas line 84 between the bubble tube 81 and the purge set 82, and the other end portion of the detection line 85 is branched into two to provide the first detector 86A and the second detector 86A. Each is connected to the detector 86B.

  The first detector 86A and the second detector 86B detect the pressure transmitted by the detection line 85. The detection ranges of the first detector 86A and the second detector 86B are different from each other. The first detector 86A has the highest liquid level (treatment level) from the pressure when the liquid level (liquid level position) of the treatment liquid 43 in the treatment tank 41 is the lowest level (the treatment tank 41 is empty). The range up to the pressure when the liquid 43 overflows from the processing tank 41 is the detection range. When the liquid level of the processing liquid 43 in the processing tank 41 is at the highest level, the second detector 86B detects the range from the minimum value to the maximum value of the pressure fluctuation range according to the gas content of the processing liquid 43. It is said.

  In a state where the liquid level of the processing liquid 43 is kept at the highest level, the detection value of the second detector 86B varies mainly according to the gas content of the processing liquid 43. That is, in a state where the liquid level of the processing liquid 43 is maintained at the highest level, the detection value of the second detector 86B substantially correlates with the gas content of the processing liquid 43. On the other hand, since the detection range of the first detector 86A is larger than the detection range of the second detector 86B, the pressure detection value by the first detector 86A is in response to fluctuations in the gas content of the processing liquid 43. It is virtually insensitive. For this reason, the detection value of the first detector 86 </ b> A substantially correlates with the liquid level of the processing liquid 43. As mentioned above, the information regarding the gas content of the processing liquid 43 is obtained by using the first detector 86A and the second detector 86B in combination. That is, when the detection value of the first detector 86A indicates that the liquid level of the processing liquid 43 is maintained at the highest level, the detection value of the second detector 86B is acquired to obtain the processing value. Information about the gas content of the liquid 43 is obtained.

(Substrate lifting mechanism)
The substrate lifting mechanism 36 immerses the substrate 8 in the processing liquid 43 in the processing tank 41. For example, the substrate elevating mechanism 36 immerses the plurality of upstanding substrates 8 in the processing liquid 43 in a state where the substrates 8 are arranged along the thickness direction.

  More specifically, the substrate lifting mechanism 36 includes a plurality of support arms 87 and a lifting part 88. The plurality of support arms 87 support the plurality of substrates 8 erected along the width direction in a state of being aligned in the depth direction. The plurality of support arms 87 are arranged in the width direction and extend in the depth direction. Each support arm 87 has a plurality of slots 87a arranged in the depth direction. The slot 87 a is a groove-like portion that opens upward along the width direction, and receives the lower portion of the upstanding substrate 8.

  The raising / lowering unit 88 raises and lowers the plurality of support arms 87 between a height at which the plurality of substrates 8 are immersed in the processing liquid 43 and a height at which the plurality of substrates 8 are positioned above the liquid surface of the processing liquid 43.

(Control part)
From the first height H1 below the gas nozzle 70 (for example, the height of the lowest part on the bottom surface of the processing tank 41), the control unit 7 can immerse the substrate 8 in the second height H2 (for example, the processing tank 41). Control the processing liquid supply unit 44 so as to supply the processing liquid 43 to the processing tank 41 until the liquid level rises to the height of the upper end surface), and the substrate in a state where the liquid level is equal to or higher than the second height H2. The substrate elevating mechanism 36 is controlled so that 8 is immersed in the processing liquid 43, and the processing liquid 43 is discharged from the processing tank 41 until the liquid level drops from the second height H2 to the first height H1. Controlling the treatment liquid discharge unit 67 and increasing the gas supply amount while the liquid level rises from the first height H1 to the second height H2, and the liquid level increases from the second height H2 to the first height. Controlling the gas supply unit 89 so as to reduce the supply amount of the gas on the way to H1; It is configured to perform.

  The control unit 7 controls the gas venting unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70, and discharges the processing liquid 43 in the main body 71. Controlling the gas supply unit 89 so as to increase the internal pressure of the main body 71 up to the obtained pressure may be further performed.

  In addition, the control unit 7 controls the gas from the gas supply unit 89 to the gas nozzle 70 according to at least one of the interval between the substrates 8, the elapsed time after the immersion of the substrate 8 is started, and the arrangement position of the gas nozzle 70. It is configured to change the supply amount.

  The control unit 7 may be configured to further control the gas supply unit 89 so as to bring the gas content of the processing liquid 43 closer to the target value by adjusting the gas supply amount. When changing the gas supply amount according to at least one of the interval between them and the elapsed time after the substrate 8 is immersed, the gas supply amount may be changed by changing the target value.

  FIG. 6 is a block diagram illustrating a functional configuration of the control unit 7. As shown in FIG. 6, the control unit 7 includes a liquid supply control unit 111, a drainage control unit 112, an immersion control unit 113, and a gas supply as a functional configuration (hereinafter referred to as “functional module”). A control unit 114, a cleaning control unit 118, and a recipe storage unit 119 are included.

  The recipe storage unit 119 stores various parameters set in advance for specifying the processing content.

  The liquid supply control unit 111 controls the processing liquid supply unit 44 to supply the processing liquid 43 to the processing tank 41 until the liquid level rises from the first height H1 to the second height H2. Hereinafter, this control is referred to as “treatment liquid 43 filling control”.

  The immersion control unit 113 controls the substrate lifting mechanism 36 so that the substrate 8 is immersed in the processing liquid 43 in a state where the liquid level is equal to or higher than the second height H2. Hereinafter, this control is referred to as “immersion control of the substrate 8”.

  The drainage control unit 112 controls the processing liquid discharge unit 67 to discharge the processing liquid 43 from the processing tank 41 until the liquid level drops from the second height H2 to the first height H1. Hereinafter, this control is referred to as “treatment liquid 43 discharge control”.

  The gas supply control unit 114 includes an on / off control unit 115, a target value setting unit 116, and a follow-up control unit 117 as more detailed function modules.

  The on / off control unit 115 increases the gas supply amount while the liquid level rises from the first height H1 to the second height H2, and the liquid level drops from the second height H2 to the first height H1. During this process, the gas supply unit 89 is controlled so as to reduce the gas supply amount. Controlling the gas supply unit 89 so as to increase the gas supply amount includes controlling the gas supply unit 89 so as to start the gas supply with the on-off valve 92 being opened from the closed state. Controlling the gas supply unit 89 so as to reduce the gas supply amount includes controlling the gas supply unit 89 so as to stop the gas supply by closing the on-off valve 92 from the open state.

  The on / off control unit 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and from the second height H2 to the second height H2. The gas supply unit 89 may be controlled so that the supply of gas is stopped after the liquid level descending to the height H1 passes through the discharge hole 77.

  Further, the on / off controller 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and the second height H2 The gas supply unit 89 may be controlled for each gas nozzle 70 having a different height so as to stop the gas supply after the liquid level descending from the first to the first height H1 passes through the discharge hole 77. . For example, the on / off controller 115 changes the open / close valve 92A from the closed state to the open state before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70A. Before the liquid level reaches the discharge hole 77 of the gas nozzle 70B, the open / close valve 92B is changed from the closed state to the open state, and before the liquid level reaches the discharge hole 77 of the gas nozzle 70C, the open / close valve 92C is changed from the closed state to the open state. Thus, the gas supply unit 89 is controlled. Thereafter, the on / off control unit 115 changes the opening / closing valve 92C from the open state to the closed state after the liquid level descending from the second height H2 to the first height H1 passes through the discharge hole 77 of the gas nozzle 70C. After the surface passes through the discharge hole 77 of the gas nozzle 70B, the open / close valve 92B is changed from the open state to the closed state, and after the liquid level passes through the discharge hole 77 of the gas nozzle 70A, the open / close valve 92C is changed from the open state to the closed state. The gas supply unit 89 is controlled.

  The on / off control unit 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and from the second height H2 to the second height H2. Control of the gas supply unit 89 so as to stop the supply of gas after the liquid level descending to the height H1 passes through the discharge hole 77 may be performed simultaneously by the gas nozzles 70 having different heights. In this case, the on / off controller 115 sets all the gas nozzles 70 before the liquid level rising from the first height H1 to the second height H2 reaches the discharge holes 77 of the lowest gas nozzle 70 (gas nozzle 70A). Gas supply to all gas nozzles 70 is stopped after the liquid level descending from the second height H2 to the first height H1 passes through the discharge holes 77 of the lowest gas nozzle 70. The gas supply unit 89 may be controlled to do so.

  The target value setting unit 116 sets the target value of the gas content of the processing liquid 43 according to at least one of the interval between the substrates 8 and the elapsed time after the immersion of the substrate 8 is started. For example, the target value setting unit 116 acquires the elapsed time from the immersion control unit 113 and changes the target value of the gas content of the processing liquid 43 according to the elapsed time. More specifically, the target value setting unit 116 may change the target value of the gas content of the processing liquid 43 before and after the elapsed time reaches a predetermined timing. The timing and target values before and after the timing are set in advance and stored in the recipe storage unit 119, and the target value setting unit 116 acquires these pieces of information from the recipe storage unit 119.

  Different target values may be stored in the recipe storage unit 119 depending on the distance between the substrates 8. In this case, the target value setting unit 116 changes the target value according to the interval between the substrates 8. The interval between the substrates 8 is determined according to the number of substrates 8 supported by the support arm 87 of the substrate lifting mechanism 36. The number of the substrates 8 supported by the support arm 87 is appropriately set according to the etching process conditions for the substrate 8. For example, when the influence of one elution on the adjacent substrate 8 on the other etching process cannot be ignored, the number of the substrates 8 supported by the support arm 87 is reduced to make some slots 87a, and the substrates 8 It is necessary to increase the interval.

  The follow-up control unit 117 controls the gas supply unit 89 so that the gas content of the processing liquid 43 approaches the target value by adjusting the gas supply amount. At this time, the follow-up control unit 117 may change the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 in accordance with the arrangement position of the gas nozzle 70. For example, the tracking control unit 117 may change the gas supply amount from the gas supply unit 89 to the gas nozzle 70 in accordance with the position of the gas nozzle 70 with the center in the width direction as a reference. That is, the follow-up control unit 117 may increase the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 as the arrangement position of the gas nozzle 70 moves away from the center in the width direction. The amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 may be reduced as the distance from the center in the width direction increases. More specifically, the follow-up control unit 117 may vary the opening degree of the flow rate controllers 93A, 93B, and 93C so as to vary the amount of gas supplied to the gas nozzles 70A, 70B, and 70C.

  The cleaning control unit 118 controls the gas venting unit 95 so as to lower the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70, and discharges the processing liquid 43 in the main body 71. Controlling the gas supply unit 89 so as to increase the internal pressure of the main body 71 to a possible pressure. Hereinafter, this control is referred to as “gas nozzle 70 cleaning control”. The cleaning control unit 118 may execute the cleaning control of the gas nozzle 70 before the substrate 8 is immersed in the processing liquid 43 after the liquid level rises from the first height H1 to the second height H2. After the substrate 8 is immersed in the treatment liquid 43, the process may be performed before the liquid level drops from the second height H2 to the first height H1.

[Substrate liquid treatment method]
Subsequently, a control procedure executed by the control unit 7 will be described as an example of the substrate liquid processing method. As shown in FIG. 7, the control unit 7 first executes step S01. Step S01 includes the filling control of the processing liquid 43 described above. A more detailed procedure will be described later. Next, the control part 7 performs step S02. Step S02 includes the cleaning control of the gas nozzle 70 described above. A more detailed procedure will be described later. Next, the control part 7 performs step S03. Step S03 includes the immersion control of the substrate 8 described above. A more detailed procedure will be described later. Next, the control part 7 performs step S04. Step S04 includes the discharge control of the processing liquid 43 described above. A more detailed procedure will be described later.

  Next, the control part 7 performs step S05. Step S05 includes confirming whether or not the liquid processing for all lots has been completed. If it is determined in step S05 that there are still lots for which liquid processing has not been completed, the control unit 7 returns the procedure to step S01. Thereafter, the filling control of the processing liquid 43, the cleaning control of the gas nozzle 70, the immersion control of the substrate 8 and the discharge control of the processing liquid 43 are repeated until the liquid processing of all lots is completed. If it is determined in step S05 that the liquid processing for all lots has been completed, the control unit 7 completes the control of the etching processing apparatus 1.

  In the example of FIG. 7, the control unit 7 performs the cleaning control of the gas nozzle 70 after the filling control of the processing liquid 43 and before the immersion control of the substrate 8, but is not limited thereto. For example, the control unit 7 may perform the cleaning control of the gas nozzle 70 after the immersion control of the substrate 8 and before the discharge control of the processing liquid 43. In the processing in the etching processing apparatus 1, more silicon is eluted when the substrate 8 is immersed in the processing liquid than in the processing in the cleaning processing apparatus 25. Thereby, when the silicon concentration of the processing tank 34 becomes high, the cleaning control of the gas nozzle 70 is executed after the filling control of the processing tank 41 and before the immersion control of the substrate 8 as in the example of FIG. Is preferred.

  In the example of FIG. 7, the control unit 7 performs processing liquid filling control, gas nozzle 70 cleaning control, and processing liquid discharge control for each lot of processing. Processing liquid filling control, gas nozzle 70 cleaning control, and processing liquid discharge control may be executed for each lot.

(Processing liquid filling procedure)
Subsequently, a detailed procedure of the filling control of the processing liquid 43 in step S01 will be described. As shown in FIG. 8, the control unit 7 first executes step S11. In step S <b> 11, the liquid supply control unit 111 controls the processing liquid supply unit 44 to start filling the processing tank 41 with the processing liquid 43. For example, the liquid supply control unit 111 opens the flow rate regulator 46 and starts supplying the processing liquid 43 into the outer tank 42 in a state where the processing tank 41 is empty and the on-off valve 69 is closed. The processing liquid supply unit 44 is controlled so that the pump 52 is driven to start liquid feeding from the outer tank 42 to the processing tank 41.

  Next, the control part 7 performs step S12. In step S12, the on / off control unit 115 waits for a valve opening time set in advance for the on-off valve 92 to be opened next. The opening time of the on-off valve 92 is set to a time before the liquid level reaches the discharge hole 77 of the gas nozzle 70 corresponding to the on-off valve 92 and is stored in the recipe storage unit 119. The opening time of the on-off valve 92 differs depending on the height of the corresponding gas nozzle 70, and the longer the gas nozzle 70 is, the longer it is.

  Next, the control part 7 performs step S13. In step S <b> 13, the on / off control unit 115 controls the gas supply unit 89 so as to switch the on-off valve 92 whose valve opening time has elapsed in step S <b> 12 from the closed state to the open state.

  Next, the control part 7 performs step S14. In step S <b> 14, the on / off control unit 115 confirms whether the on / off valves 92 of all the gas nozzles 70 are opened.

  In Step S14, when it is determined that the unopened on-off valve 92 remains, the control unit 7 returns the procedure to Step S12. Thereafter, until all the open / close valves 92 are opened, the control unit 7 repeats waiting for the open time and opening of the open / close valves 92. Thereby, the on-off valve 92 of the lower gas nozzle 70 is opened in order. More specifically, the opening / closing valve 92A is opened before the liquid level of the processing liquid 43 reaches the discharge hole 77 of the gas nozzle 70A, and the liquid level that has passed through the discharge hole 77 of the gas nozzle 70A reaches the discharge hole 77 of the gas nozzle 70B. The on-off valve 92B is opened before the opening, and the on-off valve 92C is opened before the liquid level that has passed through the discharge hole 77 of the gas nozzle 70B reaches the discharge hole 77 of the gas nozzle 70C.

  If it is determined in step S14 that all the on-off valves 92 have been opened, the control unit 7 executes step S15. In step S15, the liquid supply control unit 111 waits for the elapse of a preset filling time. The filling time is set after the time when the liquid level of the processing liquid 43 reaches the second height H2, and is stored in the recipe storage unit 119.

  Next, the control part 7 performs step S16. In step S <b> 16, the liquid supply control unit 111 starts circulation control of the processing liquid 43. In the circulation control of the processing liquid 43, the processing liquid supply unit 44 is controlled so that the processing liquid 43 overflowing from the processing tank 41 to the outer tank 42 is returned to the lower part of the processing tank 41 by continuously driving the supply pump 52. Including doing. In the circulation control, the liquid supply control unit 111 controls the processing liquid supply unit 44 so as to adjust the opening degree of the flow rate regulator 48 for pure water according to the concentration of the processing liquid 43 detected by the concentration sensor 58. You may do that. Thus, step S01 is completed.

(Gas nozzle cleaning procedure)
Next, a detailed procedure for cleaning control of the gas nozzle 70 in step S02 will be described. As shown in FIG. 9, the control unit 7 first executes step S21. In step S <b> 21, the cleaning control unit 118 controls the gas supply unit 89 so as to close the on-off valve 92 and interrupt the supply of gas to the gas nozzle 70.

  Next, the control part 7 performs step S22. In step S <b> 22, the cleaning control unit 118 controls the gas venting unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70. For example, the cleaning control unit 118 controls the degassing unit 95 so that the pressure reducing valve 97 is changed from the closed state to the open state.

  Next, the control part 7 performs step S23. In step S23, the cleaning control unit 118 waits for a preset decompression time. The decompression time is set so that an amount of the processing solution 43 suitable for cleaning is sucked into the main body 71 and stored in the recipe storage unit 119.

  Next, the control part 7 performs step S24. In step S <b> 24, the cleaning control unit 118 controls the degassing unit 95 so as to stop the decompression in the main body 71. For example, the cleaning control unit 118 controls the degassing unit 95 so that the pressure reducing valve 97 is changed from the open state to the closed state.

  Next, the control part 7 performs step S25. In step S25, the cleaning control unit 118 waits for a preset cleaning time. The cleaning time is set so that the cleaning effect by the processing liquid 43 sucked into the main body 71 can be sufficiently obtained, and is stored in the recipe storage unit 119.

  Next, the control part 7 performs step S26. In step S <b> 26, the cleaning control unit 118 controls the gas supply unit 89 so as to increase the internal pressure of the main body 71 to a pressure at which the processing liquid 43 in the main body 71 can be discharged. For example, the cleaning control unit 118 controls the gas supply unit 89 so as to restart the supply of gas to the gas nozzle 70 by opening the on-off valve 92.

  Next, the control part 7 performs step S27. In step S27, the cleaning control unit 118 waits for a preset drainage time. The drainage time is set so that the treatment liquid 43 sucked into the main body 71 can be sufficiently drained, and is stored in the recipe storage unit 119. Thus, step S02 is completed.

(Substrate immersion procedure)
Subsequently, a detailed procedure of the immersion control of the substrate 8 in step S03 will be described. As shown in FIG. 10, the controller 7 first executes step S31. In step S <b> 31, a plurality of support arms from the height at which the immersion control unit 113 positions the plurality of substrates 8 above the liquid surface of the processing liquid 43 to the height at which the plurality of substrates 8 are immersed in the processing liquid 43. The substrate elevating mechanism 36 is controlled so as to lower 87.

  Next, the control part 7 performs step S32. In step S32, the immersion control unit 113 waits for the elapse of a preset processing time. The processing time is set according to the required degree of etching and is stored in the recipe storage unit 119.

  Next, the control part 7 performs step S33. In step S <b> 33, a plurality of support arms from a height at which the immersion control unit 113 immerses the plurality of substrates 8 in the processing liquid 43 to a height at which the plurality of substrates 8 are positioned above the liquid surface of the processing liquid 43. The substrate raising / lowering mechanism 36 is controlled to raise 87. Thus, step S03 is completed.

(Control procedure of gas supply unit during substrate immersion)
In parallel with the immersion control of the substrate 8, the control unit 7 controls the gas supply amount by the gas supply unit 89. Hereinafter, the control procedure of the gas supply amount will be described. As shown in FIG. 11, the control unit 7 first executes step S41. In step S <b> 41, the target value setting unit 116 acquires the target value of the gas content of the processing liquid 43 from the recipe storage unit 119.

  As described above, the recipe storage unit 119 may store different target values depending on the distance between the substrates 8. In this case, the target value setting unit 116 changes the target value according to the interval between the substrates 8.

  Next, the control part 7 performs step S42. In step S <b> 42, the follow-up control unit 117 acquires information regarding the gas content of the processing liquid 43 from the liquid level sensor 80.

  Next, the control part 7 performs step S43. In step S43, the follow-up control unit 117 sets the gas supply amount from the gas supply unit 89 to the gas nozzle 70 so that the gas content of the processing liquid 43 approaches the target value. For example, the follow-up control unit 117 calculates the current value of the gas content of the processing liquid 43 based on the information acquired in step S42, calculates a deviation between the target value and the current value, and performs a proportional operation on the deviation. The opening degree of the flow rate regulator 93 is calculated by performing proportional / integral calculation or proportional / integral / differential calculation.

  The follow-up control unit 117 may change the gas supply amount from the gas supply unit 89 to the gas nozzle 70 in accordance with the arrangement position of the gas nozzle 70. For example, the follow-up control unit 117 may change the opening setting value of the flow rate regulator 93 corresponding to the gas nozzle 70 according to the position of the gas nozzle 70 with respect to the center in the width direction. That is, the follow-up control unit 117 may increase the opening setting value of the flow rate regulator 93 as the arrangement position of the gas nozzle 70 moves away from the center in the width direction, and the arrangement position of the gas nozzle 70 may be set in the center in the width direction. The opening degree set value of the flow rate regulator 93 may be decreased as the distance from the distance increases. More specifically, the follow-up control unit 117 may vary the opening degree of the flow rate controllers 93A, 93B, and 93C so as to vary the amount of gas supplied to the gas nozzles 70A, 70B, and 70C.

  Next, the control part 7 performs step S44. In step S44, the follow-up control unit 117 controls the gas supply unit 89 so as to adjust the opening degree of the flow rate regulator 93 according to the opening degree set value set in step S43.

  Next, the control part 7 performs step S45. In step S45, the target value setting unit 116 checks whether or not the elapsed time after the immersion of the substrate 8 has started reaches the target value change timing. The target value setting unit 116 acquires elapsed time information from the immersion control unit 113 and acquires target value change timing information from the recipe storage unit 119.

  If it is determined in step S45 that the elapsed time has reached the target value change timing, the control unit 7 executes step S46. In step S46, the target value setting unit 116 changes the target value of the gas content of the processing liquid 43. For example, the target value setting unit 116 acquires the target value of the gas content of the processing liquid 43 after the change timing from the recipe storage unit 119.

  Next, the control part 7 performs step S47. If it is determined in step S45 that the elapsed time has not reached the target value change timing, the control unit 7 executes step S47 without executing step S46. In step S47, the target value setting unit 116 checks whether or not the immersion of the substrate 8 is completed. The target value setting unit 116 acquires information indicating whether or not the immersion of the substrate 8 has been completed from the immersion control unit 113.

  In step S47, when it determines with immersion of the board | substrate 8 not being completed, the control part 7 returns a procedure to step S42. Thereafter, until the immersion of the substrate 8 is completed, the control of bringing the gas content of the processing liquid 43 close to the target value and the change of the target time according to the elapsed time are repeated.

  If it is determined in step S47 that the immersion of the substrate 8 has been completed, the control unit 7 completes the control of the gas supply amount.

(Processing liquid discharge procedure)
Subsequently, a detailed procedure of the discharge control of the processing liquid 43 in step S04 will be described. As shown in FIG. 12, the control unit 7 first executes step S51. In step S51, the drainage control unit 112 controls the processing liquid supply unit 44 and the processing liquid discharge unit 67 so as to start discharging the processing liquid 43 from the processing tank 41. For example, the drainage controller 112 closes the flow controller 46 and the flow controller 48 to control the processing liquid supply unit 44 to stop the supply of the processing liquid 43 and pure water, and then opens the on-off valve 69 from the closed state. The processing liquid discharger 67 is controlled so as to start the discharge of the processing liquid 43 from the processing tank 41 in the open state.

  Next, the control part 7 performs step S52. In step S52, the on / off control unit 115 waits for a preset valve closing time for the on-off valve 92 to be closed next. The closing time of the on-off valve 92 is set to a time after the liquid level passes through the discharge hole 77 of the gas nozzle 70 corresponding to the on-off valve 92, and is stored in the recipe storage unit 119. The valve closing time of the on-off valve 92 varies depending on the height of the corresponding gas nozzle 70, and the longer the gas nozzle 70 is, the longer it is.

  Next, the control part 7 performs step S53. In step S53, the on / off control unit 115 controls the gas supply unit 89 so as to switch the on-off valve 92 that has passed the valve closing time in step S52 from the open state to the closed state.

  Next, the control part 7 performs step S54. In step S54, the on / off control unit 115 confirms whether the on-off valves 92 of all the gas nozzles 70 are closed.

  If it is determined in step S54 that the open on-off valve 92 remains, the control unit 7 returns the procedure to step S52. Thereafter, until all the open / close valves 92 are closed, the standby of the valve closing time and the closing of the open / close valves 92 are repeated. Thereby, the on-off valve 92 of the high-order gas nozzle 70 is sequentially closed. More specifically, the opening / closing valve 92C is closed after the liquid level of the processing liquid 43 has passed through the discharge hole 77 of the gas nozzle 70C, and the liquid level that has passed through the discharge hole 77 of the gas nozzle 70C has passed through the discharge hole 77 of the gas nozzle 70B. The on-off valve 92B is closed later, and the liquid level that has passed through the discharge hole 77 of the gas nozzle 70B passes through the discharge hole 77 of the gas nozzle 70A, and then the on-off valve 92A is closed.

  In step S54, when it is determined that all the on-off valves 92 are closed, the control unit 7 executes step S55. In step S55, the drainage control unit 112 waits for passage of a preset drainage time. The drainage time is set after the time when the liquid level of the processing liquid 43 reaches the first height H1, and is stored in the recipe storage unit 119.

  Next, the control part 7 performs step S56. In step S <b> 56, the drainage control unit 112 controls the processing liquid supply unit 44 to stop driving the supply pump 52 and controls the processing liquid discharge unit 67 to close the on-off valve 69. Thus, step S04 is completed.

[Effect of this embodiment]
As described above, the substrate liquid processing apparatus A1 includes the processing tank 41 containing the processing liquid 43 and the substrate 8 and the plurality of upstanding substrates 8 arranged in the thickness direction in the processing tank 41. The substrate lifting mechanism 36 immersed in the processing liquid 43, the plurality of gas nozzles 70 for discharging gas at the lower part in the processing tank 41, the gas supply unit 89 for supplying gas to the plurality of gas nozzles 70, and the distance between the substrates 8 The control unit configured to change the gas supply amount from the gas supply unit 89 to the gas nozzle 70 according to at least one of the elapsed time after the immersion of the substrate 8 is started and the arrangement position of the gas nozzle 70. 7.

  The amount of gas to be supplied from the gas nozzle 70 varies depending on various factors. In particular, the interval between the substrates 8, the elapsed time after the immersion of the substrate 8 is started, and the arrangement position of the gas nozzle 70 can all be large factors. For this reason, the substrate liquid processing including the control unit 7 that sets the gas supply amount according to at least one of the interval between the substrates 8, the elapsed time after the immersion of the substrate 8 is started, and the arrangement position of the gas nozzle 70. The apparatus A1 is effective for optimizing the gas supply amount.

  The control unit 7 may change the gas supply amount from the gas supply unit 89 to the gas nozzle 70 according to at least the elapsed time. The control unit 7 may change the gas supply amount from the gas supply unit 89 to the gas nozzle 70 according to at least the interval between the substrates 8.

  The substrate liquid processing apparatus A1 may further include a liquid level sensor 80 that acquires information regarding the amount of gas contained in the processing liquid 43, and the control unit 7 is included in the processing liquid 43 by adjusting the gas supply amount. The gas supply unit 89 is further controlled to bring the amount of gas to be brought close to the target value, and at least one of the interval between the substrates 8 and the elapsed time after the substrate 8 starts to be immersed When changing the gas supply amount according to the above, the gas supply amount from the gas supply unit 89 to the gas nozzle 70 may be changed by changing the target value. In this case, the target value of the gas supply amount is set according to at least one of the interval between the substrates 8 and the elapsed time after the immersion of the substrate 8 is started, and the gas supply amount is set to the target value. By performing together with the control for following the above, the gas supply amount can be brought closer to an appropriate state more reliably. Therefore, it is more effective for optimizing the gas supply amount.

  Although the embodiment has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. The substrate to be processed is not limited to a silicon wafer, and may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like. Moreover, although the structure regarding the etching processing apparatus 1 was shown in detail as substrate liquid processing apparatus A1, the same structure is applicable also to the cleaning processing apparatus 25. FIG.

  A1 ... Substrate liquid processing apparatus, 7 ... Control unit, 8 ... Substrate, 36 ... Substrate lifting mechanism (conveyance unit), 38 ... Storage medium, 70, 70A, 70B, 70C ... Gas nozzle, 89 ... Gas supply unit, 80 ... Liquid Position sensor, 41... Processing tank, 43.

Claims (8)

A treatment tank containing a treatment liquid and a substrate;
A transport unit that is immersed in the processing liquid in the processing tank in a state in which the plurality of upstanding substrates are arranged along the thickness direction;
A plurality of gas nozzles for discharging gas at a lower portion in the processing tank;
A gas supply unit for supplying the gas to the gas nozzles;
The supply amount of the gas from the gas supply unit to the gas nozzle is changed according to at least one of an interval between the substrates, an elapsed time after the immersion of the substrate is started, and an arrangement position of the gas nozzle. A substrate liquid processing apparatus comprising: a configured control unit.   The substrate liquid processing apparatus according to claim 1, wherein the control unit changes a supply amount of the gas from the gas supply unit to the gas nozzle according to at least the elapsed time.   The substrate liquid processing apparatus according to claim 1, wherein the control unit changes a supply amount of the gas from the gas supply unit to the gas nozzle according to at least an interval between the substrates. It further comprises a sensor for obtaining information on the amount of gas contained in the processing liquid,
The control unit is configured to further control the gas supply unit so as to bring the amount of gas contained in the processing liquid closer to a target value by adjusting the supply amount of the gas, When changing the supply amount of the gas according to at least one of the interval and the elapsed time after the immersion of the substrate is started, the target value is changed to change the target value from the gas supply unit to the gas nozzle. The substrate liquid processing apparatus according to claim 1, wherein a gas supply amount is changed. Immersing a plurality of upright substrates in a treatment liquid in a treatment tank in a state of being arranged along the thickness direction;
Supplying the gas to a gas nozzle that discharges gas at a lower portion in the processing tank;
Changing the supply amount of the gas to the gas nozzle according to at least one of an interval between the substrates, an elapsed time after the immersion of the substrate is started, and an arrangement position of the gas nozzle. Processing method.   The substrate liquid processing method according to claim 5, wherein a supply amount of the gas to the gas nozzle is changed according to at least the elapsed time.   The substrate liquid processing method according to claim 5 or 6, wherein a supply amount of the gas to the gas nozzle is changed at least in accordance with an interval between the substrates.   A computer-readable storage medium storing a program for causing an apparatus to execute the substrate liquid processing method according to claim 5.

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