KR100657387B1 - 박막 트랜지스터 및 그 제조방법과 그것을 구비한 액정표시장치 - Google Patents
박막 트랜지스터 및 그 제조방법과 그것을 구비한 액정표시장치 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (5)
- 기판 상에 형성된 게이트 전극과, 상기 게이트 전극 상에 형성된 게이트 절연막과, 상기 게이트 전극 상의 상기 게이트 절연막 상에 형성된 동작 반도체막과, 상기 동작 반도체막 상에 형성된 채널 보호막과, 상기 채널 보호막을 사이에 두고 상기 동작 반도체막에 접속된 소스/드레인 전극을 구비한 바텀(bottom) 게이트형의 박막 트랜지스터에 있어서,상기 채널 보호막은 상기 동작 반도체막의 상부 계면(界面)에 접촉하는 제 1 절연층과, 상기 제 1 절연층 상에 형성되고, 두께가 상기 제 1 절연층보다 두껍고, 두께가 1.0㎛ 이상 2.5㎛ 이하인 제 2 절연층을 갖고 있는 것을 특징으로 하는 박막 트랜지스터.
- 제 1 항에 있어서,상기 제 1 절연층은 무기계(無機系) 절연 재료로 형성되고,상기 제 2 절연층은 유기계(有機系) 절연 재료로 형성되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 제 1 항에 있어서,상기 제 1 절연층은 무기계 절연 재료로 형성되고,상기 제 2 절연층은 상기 무기계 절연 재료와 다른 무기계 절연 재료로 형성되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 기판 상에 게이트 전극을 형성하고, 상기 게이트 전극 상에 게이트 절연막을 형성하고, 상기 게이트 전극 상의 상기 게이트 절연막 상에 동작 반도체막을 형성하고, 상기 동작 반도체막 상에 채널 보호막을 형성하고, 상기 채널 보호막을 사이에 두고 상기 동작 반도체막에 접속되는 소스/드레인 전극을 형성하는 바텀 게이트형 박막 트랜지스터의 제조방법에 있어서,상기 채널 보호막은 상기 동작 반도체막의 상부 계면에 접촉하는 제 1 절연층과, 상기 제 1 절연층 상에 형성되고, 두께가 상기 제 1 절연층보다 두껍고, 두께가 1.0㎛ 이상 2.5㎛ 이하인 제 2 절연층을 적층시켜 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 기판 상에 형성된 복수의 게이트 배선과, 상기 게이트 배선에 거의 직교하여 배치된 복수의 데이터 배선으로 획정(劃定)된 복수의 화소 영역마다 스위칭 소자가 형성된 액티브 매트릭스형 액정표시장치에 있어서,상기 스위칭 소자로서, 상기 제 1 항 내지 제 3 항 중 어느 한 항에 기재된 박막 트랜지스터가 사용되는 것을 특징으로 하는 액정표시장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP99-295677 | 1999-10-18 | ||
JP29567799A JP2001119029A (ja) | 1999-10-18 | 1999-10-18 | 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置 |
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Publication Number | Publication Date |
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KR20010050055A KR20010050055A (ko) | 2001-06-15 |
KR100657387B1 true KR100657387B1 (ko) | 2006-12-19 |
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KR1020000046589A KR100657387B1 (ko) | 1999-10-18 | 2000-08-11 | 박막 트랜지스터 및 그 제조방법과 그것을 구비한 액정표시장치 |
Country Status (4)
Country | Link |
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US (1) | US6855954B1 (ko) |
JP (1) | JP2001119029A (ko) |
KR (1) | KR100657387B1 (ko) |
TW (1) | TW594113B (ko) |
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JP3904936B2 (ja) * | 2001-03-02 | 2007-04-11 | 富士通株式会社 | 半導体装置の製造方法 |
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KR100515677B1 (ko) * | 2001-12-27 | 2005-09-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
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